CN101202263A - Encapsulation structure and method for forming the same - Google Patents
Encapsulation structure and method for forming the same Download PDFInfo
- Publication number
- CN101202263A CN101202263A CN 200710305812 CN200710305812A CN101202263A CN 101202263 A CN101202263 A CN 101202263A CN 200710305812 CN200710305812 CN 200710305812 CN 200710305812 A CN200710305812 A CN 200710305812A CN 101202263 A CN101202263 A CN 101202263A
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- CN
- China
- Prior art keywords
- crystal grain
- solder layer
- lead frame
- encapsulating structure
- heat radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Abstract
The invention provides a packaging structure and the forming method thereof, wherein, the packaging structure comprises a conductor frame, a crystal grain, a solder layer and a plurality of connecting components; wherein, the conductor frame comprises a heat dissipating gasket and a plurality of guide feet, and the heat dissipating gasket is arranged on the essentially central position of the conductor frame, and the guide feet are arranged around the heat dissipating gasket; the crystal grain which is provided with an active surface is arranged on the conductor frame and is electrically connected to the conductor frame through the solder layer and the connecting components; the solder layer is arranged between the active surface and the heat dissipating gasket; a plurality of connecting components are arranged between the active surface and the guide feet.
Description
Technical field
The invention relates to a kind of encapsulating structure and forming method thereof, and particularly relevant for a kind of chip-packaging structure and forming method thereof.
Background technology
The semiconductor packaging development is rapid, and various chip can reach the purpose of protecting chip and avoiding chip to make moist by encapsulation technology, and the lead of the inner lead road of guiding chip and printed circuit board (PCB) electrically connects.
Please refer to Fig. 1, it illustrates a kind of profile of conventional package structure.Encapsulating structure 10 comprises a crystal grain 11, a lead frame 12, several conductive projections (solder bump) 13 and one packing colloid 14 at least.Crystal grain 11 electrically connects via several conductive projections 13 and lead frame 12.Via molding press (mold press) packing colloid 14 is poured into 12 of crystal grain 11 and lead frames.This packing colloid 14 is to coat crystal grain 11, lead frame 12 and several conductive projections 13, with oxidation or collsion damage so that crystal grain 11 keeps away from moisture.
Form packing colloid 14 except that pour between crystal grain 11 and the lead frame 12 by molding press, also can insert small gap between the conductive projection 13 by the capillarity of fluid.Yet owing to the space of 13 of conductive projections is too narrow and small, easily make packing colloid 14 can't fill up its space, and cause the encapsulation procedure failure, reduce the product yield.In addition, when crystal grain 11 engages with lead frame 12,, can make that also packing colloid 14 can't fill up if cause the avalanche (collapse) of conductive projection 13.
In addition, because crystal grain 11 relatively can produce high heat energy in the process of operation, the loss of its heat energy is by conductive projection 13 conduction, the heat radiation approach of right heat energy only is confined on the conductive projection 13, reduced the efficient of heat energy dissipation relatively, be easy to generate chip and burn and reduce problems such as sdlc chip.Therefore how to improve traditional encapsulating structure, to overcome above-mentioned problem, real is one of present problem demanding prompt solution.
Summary of the invention
The invention relates to a kind of encapsulating structure itself and formation method, it is engaged in lead frame by solder layer with crystal grain, to promote the radiating efficiency of crystal grain in the encapsulating structure.
According to a first aspect of the invention, propose a kind of encapsulating structure, this structure comprises a lead frame, a crystal grain, a solder layer and several coupling assemblings.Lead frame comprises heat radiation connection pad and several lead foots.The heat radiation connection pad is arranged at the substantial middle position of lead frame.These a little lead foots are around the heat radiation connection pad.Crystal grain has an active surface, and this crystal grain is arranged on the lead frame.Solder layer is arranged between the active surface and heat radiation connection pad of crystal grain.These a little coupling assemblings are arranged between the active surface and lead foot of crystal grain.And crystal grain is electrically connected at lead frame via solder layer and this a little coupling assemblings.
According to a second aspect of the invention, propose a kind of formation method of encapsulating structure, the method at first provides a crystal grain, and this crystal grain has an active surface.Then, form a solder layer in the substantial middle position of active surface.Secondly, with several coupling assemblings of configured in array mode around solder layer.Moreover, a lead frame is provided.Then, through a little coupling assemblings and solder layer engage crystal grain on lead frame thus.
Disclosed encapsulating structure of the present invention and forming method thereof is to adopt solder layer and coupling assembling that crystal grain and lead frame are engaged, and has increased the heat-conducting area between crystal grain and the lead frame, promotes the radiating effect of crystal grain further.Moreover, because solder layer is electrically connected at crystal grain and lead frame, make that crystal grain can be the problem that can reduce electromagnetic interference by solder layer and lead frame ground connection.In addition, reducing the number of coupling assembling by solder layer, and then crack between reducing between coupling assembling, is to imitate the yield that promotes the processing procedure that the glue material fills up.
For foregoing of the present invention can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 is the profile that illustrates a kind of conventional package structure;
Fig. 2 is the flow chart that illustrates according to the formation method of the encapsulating structure of preferred embodiment of the present invention;
Fig. 3 A is the schematic diagram that illustrates according to the crystal grain of preferred embodiment of the present invention;
Fig. 3 B is the profile that illustrates among Fig. 3 A along 3B-3B ' line;
Fig. 4 A illustrates the schematic diagram that solder layer is formed at the crystal grain of Fig. 3 A;
Fig. 4 B be illustrate according among Fig. 4 A along the profile of 4B-4B ' line;
Fig. 5 A illustrates to form coupling assembling in the schematic diagram of the crystal grain of Fig. 4 A;
Fig. 5 B illustrates the profile along 5B-5B ' line according to Fig. 5 A;
Fig. 6 A is the schematic diagram that illustrates according to the lead frame of preferred embodiment of the present invention;
Fig. 6 B be illustrate according among Fig. 6 A along the side cutaway view of 6B-6B ' hatching;
Fig. 7 A illustrates the schematic diagram that crystal grain is engaged in the lead frame of Fig. 6 A;
Fig. 7 B is the profile that illustrates among Fig. 7 A along 7B-7B ' line; And
Fig. 8 illustrates to insert the encapsulating structure generalized section of glue material in Fig. 7 B.
Embodiment
The present invention proposes a kind of encapsulating structure and forming method thereof.Encapsulating structure comprises a lead frame, a crystal grain, a solder layer and several coupling assemblings.Lead frame comprises heat radiation connection pad and several lead foots.The heat radiation connection pad is arranged at the substantial middle position of lead frame.Several lead foots are around the setting of heat radiation connection pad.Crystal grain (die) has an active surface, and this crystal grain is arranged on the lead frame.Solder layer is arranged between the active surface and heat radiation connection pad of crystal grain.Several coupling assemblings are arranged between the active surface and lead foot of crystal grain, and crystal grain electrically connects this lead frame via solder layer and this a little coupling assemblings.Crystal grain in this encapsulating structure is connected with lead frame via solder layer and coupling assembling, utilizes solder layer and this a little coupling assemblings heat radiation approach as crystal grain, uses the radiating effect that promotes crystal grain.
It below is the formation method that the encapsulating structure of present embodiment is described in detail in detail.Please refer to Fig. 2, it illustrates the flow chart according to the formation method of the encapsulating structure of preferred embodiment of the present invention.
Please be simultaneously with reference to Fig. 3 A and 3B.Fig. 3 A illustrates the schematic diagram according to the crystal grain of preferred embodiment of the present invention.It illustrates among Fig. 3 A profile along 3B-3B ' line Fig. 3 B.The formation method of the encapsulating structure 300 of present embodiment at first provides a crystal grain 310, shown in the step 201 of Fig. 2.This crystal grain 310 has an active surface 310a.
Then, please be simultaneously with reference to Fig. 4 A and 4B.Fig. 4 A illustrates the schematic diagram that solder layer is formed at the crystal grain of Fig. 3 A.Fig. 4 B illustrates among Fig. 4 A the profile along 4B-4B ' line.Shown in the step 202 of Fig. 2, form a solder layer 332 in the substantial middle position of active surface 310a.In present embodiment, solder layer 332 is that the mode with paste solder printing (solder paste printing) is formed at the substantial middle position of active surface 310a.
Then, please be simultaneously with reference to Fig. 5 A and 5B.It illustrates the formation coupling assembling in the schematic diagram of the crystal grain of Fig. 4 A Fig. 5 A.Fig. 5 B illustrates among Fig. 5 A the profile along 5B-5B ' line.Shown in the step 203 of Fig. 2, with several coupling assemblings 330 of configured in array mode around solder layer 332.In present embodiment, these a little coupling assemblings 330 for example are conductive projection (solder bump), and these a little coupling assemblings 330 are to be provided with around solder layer 332 in the array mode.In addition, the material of these a little coupling assemblings 330 preferably is same as the material of solder layer 332.In present embodiment, the material of these a little coupling assemblings 330 and solder layer 332 for example is leypewter or lead-free solder.
Secondly, please be simultaneously with reference to Fig. 6 A and 6B, Fig. 6 A illustrates the schematic diagram according to the lead frame of preferred embodiment of the present invention; Fig. 6 B illustrates among Fig. 6 A the profile along 6B-6B ' line.Formation method according to present embodiment then carry out step 204, and a lead frame 320 is provided.This lead frame 320 comprises heat radiation connection pad 322 and several lead foots 324.Heat radiation connection pad 322 is positioned at lead frame 320 substantial middle positions, and these a little lead foots 324 are provided with around heat radiation connection pad 322.In present embodiment, this lead frame 320 for example is a metal material, so that good supporting and thermal conductivity to be provided.
Then, please be simultaneously with reference to Fig. 7 A and Fig. 7 B, Fig. 7 A illustrates the schematic diagram that crystal grain is engaged in the lead frame of Fig. 6 A.Fig. 7 B illustrates among Fig. 7 A the profile along 7B-7B ' line.Shown in the step 205 of Fig. 2, engage the active surface 310a of crystal grain 310 on lead frame 320 via those coupling assemblings 330 and solder layer 332.Crystal grain 310 closely is engaged in heat radiation connection pads 322 via solder layer 332, and through thus a bit coupling assemblings 330 engage with the lead foot 324 of lead frame 320.In present embodiment, it is example that the area of solder layer 332 comes down to equate with the area of the connection pad 322 that dispels the heat.In addition, coupling assembling 330 and solder layer 332 for example are leypewter or lead-free solder.
Then insert the action of glue material according to the formation method of preferred embodiment of the present invention, shown in step 206.Please refer to Fig. 8, it illustrates inserts the profile of glue material behind the encapsulating structure of Fig. 7 B.Glue material 340 is to insert 320 of crystal grain 310 and lead frames, and glue material 340 is to coat crystal grain 310, solder layer 332 and coupling assembling 330.In present embodiment, this glue material 340 for example is a resin, pours into 320 of crystal grain 310 and lead frames via molding press, inserts the space of 310 of lead frame 320 and crystal grain by liquid capillarity.By the mode of solder layer 332 on crystal grain 310 is set, significantly reduced the number of coupling assembling 330, relatively reduce the space between the coupling assembling 330, just can reduce the problem that glue material 340 can't fill up the space thus, effectively promoted the yield of glue material 340 fillings.In addition, in present embodiment, solder layer 332 is a complete plate-like structure, be difficult for the phenomenon that avalanche damages takes place, and be the yield that can promote processing procedure.
Moreover, be the high heat energy dissipation effectively that crystal grain 310 is produced in the process of operation, engage with heat radiation connection pad 322 via solder layer 332, heat energy is conducted on the lead frame 320 via solder layer 332.Because 310 contacts of solder layer 332 and crystal grain area is connected the contact area of (as shown in Figure 1) with lead frame 12 via conductive projection 13 greater than crystal grain 11 in the conventional package structure 100, so just can promote heat-sinking capabilities by solder layer 332.In addition, crystal grain 310 more can be by solder layer 332 and lead frame 320 ground connection, to avoid the problem of electromagnetic interference (Electromagnetic Interference).
Disclosed encapsulating structure of the above embodiment of the present invention and forming method thereof is to adopt solder layer and coupling assembling that crystal grain and lead frame are engaged, and has increased the heat-conducting area between crystal grain and the lead frame, promotes the radiating effect of crystal grain further.Moreover, because solder layer is electrically connected at crystal grain and lead frame, make that crystal grain can be the problem that can reduce electromagnetic interference by solder layer and lead frame ground connection.In addition, reducing the number of coupling assembling by solder layer, and then crack between reducing between coupling assembling, is to imitate the yield that promotes the processing procedure that the glue material fills up.
In sum, though the present invention discloses as above with a preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (13)
1. encapsulating structure, this encapsulating structure comprises:
Lead frame comprises:
The heat radiation connection pad is provided with the substantial middle position of this lead frame; And
Several lead foots are around this heat radiation connection pad setting;
Crystal grain has active surface, and this crystal grain is arranged on this lead frame;
Solder layer is arranged between this active surface and this heat radiation connection pad; And
Several coupling assemblings are arranged between this active surface and this lead foot;
Wherein, this crystal grain electrically connects this lead frame via this solder layer and those coupling assemblings.
2. encapsulating structure as claimed in claim 1, wherein the area of this solder layer comes down to equate with the area of this heat radiation connection pad.
3. encapsulating structure as claimed in claim 1, wherein this encapsulating structure more comprises:
Glue material, filling are between this crystal grain and this lead frame, and this glue material is to coat this crystal grain, this solder layer and those coupling assemblings.
4. encapsulating structure as claimed in claim 1, wherein those coupling assemblings are around this solder layer.
5. encapsulating structure as claimed in claim 1, wherein this solder layer is closely to be contacted with this active surface and this heat radiation connection pad.
6. encapsulating structure as claimed in claim 1, wherein those coupling assemblings are conductive projection.
7. encapsulating structure as claimed in claim 1, wherein this crystal grain is electrically connected to a ground plane via this solder layer and this heat radiation connection pad.
8. the formation method of an encapsulating structure, this formation method comprises:
Crystal grain is provided, and this crystal grain has active surface;
Form solder layer in the substantial middle position of this active surface;
With several coupling assemblings of configured in array mode around this solder layer;
Lead frame is provided; And
Engage this crystal grain on this lead frame via those coupling assemblings and this solder layer.
9. formation method as claimed in claim 8, the step that wherein forms this solder layer comprises:
Print a material in the substantial middle position of this active surface, to form this solder layer.
10. formation method as claimed in claim 9, wherein this material is same as the material of those coupling assemblings.
11. formation method as claimed in claim 8, wherein this lead frame comprises heat radiation connection pad and several lead foots, this heat radiation connection pad is positioned at the substantial middle position of this lead frame, and those lead foots are around this heat radiation connection pad setting, in the step that engages this crystal grain, this crystal grain is electrically connected at this heat radiation connection pad and those lead foots via this solder layer and those coupling assemblings respectively.
12. formation method as claimed in claim 8, this method more comprises:
Insert the glue material between this crystal grain and this lead frame, this glue material is to coat this crystal grain, this solder layer and those coupling assemblings.
13. formation method as claimed in claim 8, wherein those coupling assemblings are conductive projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710305812 CN101202263A (en) | 2007-12-24 | 2007-12-24 | Encapsulation structure and method for forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710305812 CN101202263A (en) | 2007-12-24 | 2007-12-24 | Encapsulation structure and method for forming the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101202263A true CN101202263A (en) | 2008-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710305812 Pending CN101202263A (en) | 2007-12-24 | 2007-12-24 | Encapsulation structure and method for forming the same |
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| Country | Link |
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| CN (1) | CN101202263A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760588A (en) * | 2011-04-25 | 2012-10-31 | 机智创新股份有限公司 | Switch and formation method of switch |
-
2007
- 2007-12-24 CN CN 200710305812 patent/CN101202263A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760588A (en) * | 2011-04-25 | 2012-10-31 | 机智创新股份有限公司 | Switch and formation method of switch |
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