CN101199092A - Switching circuit and method for controlling circuit breaker - Google Patents
Switching circuit and method for controlling circuit breaker Download PDFInfo
- Publication number
- CN101199092A CN101199092A CNA2005800501343A CN200580050134A CN101199092A CN 101199092 A CN101199092 A CN 101199092A CN A2005800501343 A CNA2005800501343 A CN A2005800501343A CN 200580050134 A CN200580050134 A CN 200580050134A CN 101199092 A CN101199092 A CN 101199092A
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- CN
- China
- Prior art keywords
- thyristor
- circuit breaker
- circuit
- switching circuit
- triac
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/047—Free-wheeling circuits
Abstract
The invention relates to a switching circuit comprising at least one circuit-breaker (M1, M2) for switching a load (X<SUB>L</SUB>), a resistor (RL), a thyristor (Th) or a triac (TR), and means (R1, Di, V3) for igniting the thyristor (Th) or the triac (TR) in accordance with a voltage that drops above the circuit-breaker (M1, M2). The resistor (RL) and the thyristor (Th) or triac (TR) are interconnected so as to short-circuit the at least one circuit-breaker (M1, M2).
Description
Technical field
The present invention relates to a kind of switching circuit, the application of particularly this switching circuit in the switching device of low-voltage equipment.In addition, the invention still further relates to a kind of method of controlling at least one circuit breaker, described circuit breaker is used for break-make load, particularly inductive load.
Background technology
Perfect switch device in the low-voltage equipment is except that normal on-off function, can also disconnect the switchgear of short circuit under the situation of using circuit breaker.Because short circuit all might occur at any time, need as soon as possible it to be limited and/or disconnect, therefore,, just can't effectively disconnect short circuit during current over-zero if do not take restriction in advance next time.Exactly be to proceed directly to few current limliting once.
In mechanical switch equipment, be to produce counter voltage generally speaking with metering function by switching arc.Take at arc control device under the situation of respective design (cooling), electric arc extinguishes when current over-zero next time.In the electrical switchgear that does not have the mechanical type normally opened contact, there is not this switching arc.Only under can consuming the situation that is stored in the energy in the inductance, could cut off electric current immediately.Although the inductance of load is not had an effect under the short-circuit conditions, still store big energy in the inductance of power supply.Will cause very high overvoltage, thereby cause circuit breaker impaired if cut off electric current rapidly this moment.
Summary of the invention
The purpose of this invention is to provide a kind of suitable especially switching circuit and a kind of method that is particularly suitable for being used for controlling at least one circuit breaker, wherein, described circuit breaker is used for the break-make load.
According to switching circuit of the present invention, the feature by claim 1 realizes.What the dependent claims of claim 1 related to is favourable improvement project and embodiment.
The present invention is based on a kind of like this consideration: although can limit overvoltage with rheostat (being voltage-variable resistor) or RC circuit, but by so-called " clamp ", be about to power semiconductor and just in time be controlled to the state that voltage still is lower than maximum limit, also can reach the purpose of restriction overvoltage.The energy that is stored in the power semiconductor can be transformed, and becomes the extra duty of power semiconductor but in the case.
Therefore, the invention provides a kind of switching circuit, comprise that at least one is used for the circuit breaker of break-make load.Wherein " load " mainly refers to inductive load, for example coil, motor or lead inductance.Because also the power supply inductive impedance can occur usually when power on/off resistive load or capacity load, therefore, the present invention also can advantageously be applied to this class load.
Switching circuit also has a resistor, is preferably ohmic resistor in principle, and therefore, the stray inductance of actual resistance can be ignored.
In addition, switching circuit also has a thyristor or a triac.These semiconductor device are characterised in that it must trigger by grid voltage, can keep conducting state automatically after being triggered.
Therefore, switching circuit has a kind of member, is used for according to the voltage drop on described at least one circuit breaker thyristor or triac being triggered.For this reason, described member effectively links to each other with the grid of circuit breaker and thyristor or the grid of triac.One or a plurality of electronic component that this member preferably links to each other with circuit breaker with above-mentioned grid.
In switching circuit, resistor and thyristor or triac are connected with the connected mode of described at least one circuit breaker of cross-over connection." cross-over connection " refers to: according to the particular switch state of circuit breaker and thyristor or triac, and electric current can flow through circuit breaker or thyristor or triac.
According to a kind of advantageous embodiment, described at least one circuit breaker directly links to each other with inductive load.According to the favourable implementation of another kind, but switching circuit is construed as both positive half waves of break-make alternating current, but the also negative half-wave of break-make alternating current.
According to a kind of favourable further feature, described circuit breaker links to each other with a control logic circuit.For example, control logic circuit can be gate logic, microcontroller or a special switch circuit (ASIC) of all being furnished with driving element in case of necessity.Thyristor triggering or the triac realized by described member trigger specific irrelevant with control logic circuit and control signal thereof.
For this reason, control logic circuit under short-circuit conditions with cut-off breaker.Needing to apply one (for example) on circuit breaker can make circuit breaker become the current potential of high resistance device for this reason.Wherein, short-circuit conditions is a kind of normal operation condition failure condition that departs from, and the electric current that promptly flows through circuit breaker has surpassed the limiting value that allows.For this reason, control logic circuit preferably has the measurement member, and described measurement member is used to measure the short circuit current that flows through circuit breaker.This measurement member (for example) can detect short circuit current by the voltage drop in resistor or the circuit breaker internal resistance.
Circuit breaker reasonably is a power semiconductor.The favourable embodiment of described power semiconductor is field-effect transistor (FET) or insulated gate bipolar transistor IGBT (Insulated Gate BipolarTransistor.
According to a kind of preferred version, resistor is connected with thyristor or triac, and therefore, resistor directly conducts electricity with thyristor or triac and links to each other.Wherein, other assemblies can be set, these assemblies are connected on the terminal of resistor or thyristor or triac, specific also being connected being connected between resistor and thyristor or the triac.
According to a kind of embodiment of the present invention, described member has a rheostat, and described rheostat links to each other with the grid of thyristor or the grid of triac.This rheostat that changes with change in voltage was the high resistance device before reaching threshold voltage always, and after the voltage above it surpassed threshold voltage, its resistance obviously descended to some extent.Wherein, threshold voltage is set specially for described short-circuit conditions, and therefore, under the normal working voltage situation, thyristor or triac can not be triggered.But when circuit breaker disconnected suddenly under short-circuit conditions, the induced voltage that is caused by inductance can cause a voltage, and this voltage is both greater than operating voltage, also greater than threshold voltage.In the case, an effective current flows through above-mentioned varistor, and then flows into the grid of thyristor or the grid of triac, thereby triggers thyristor or triac.
Another kind of favourable embodiment is to replace described varistor with bidirectional trigger diode, and described bidirectional trigger diode links to each other with the grid of thyristor or the grid of triac.Bidirectional trigger diode has the electrical characteristic similar to described varistor, thereby has the function of the grid of the grid that triggers thyristor or triac equally.
According to a kind of preferred implementation, be furnished with the power semiconductor of at least two (for example) differential concatenations or reverse parallel connection, particularly two mos field effect transistor MOSFET (MetalOxid Semiconductor Field Effect Transistor) or two insulated gate bipolar transistor IGBTs (Insulated Gate Bipolar Transistor).Preferable case is: all be connected with a fly-wheel diode (Freilaufdiode) between source terminal of each power semiconductor (Source) and the drain terminal (Drain).This fly-wheel diode can be an external diode, also can (for example drain electrode-body knot Drain-bulk) constitutes by the p-n junction of power semiconductor.
According to a kind of embodiment of the present invention, two diodes link to each other with circuit breaker and/or thyristor, and its continuous mode makes and to be in when being triggered state when thyristor that electric current flows through and flows through from thyristor at least in part from least one diode.These diodes have rectified action under the alternating current situation, therefore, regardless of the sense of current, short circuit current all can flow through from thyristor.
According to another kind of preferred embodiment, the size of described resistor so determines, make voltage drop on the resistor under the situation of electric current maximum less than the reverse voltage of described at least one circuit breaker.Can think that in the case the voltage drop on thyristor or the triac (and diode) is less than the voltage drop on the resistor.Perhaps, the summation of voltage drop plays a decisive role, and makes it can't surpass the inverse peak voltage of circuit breaker.
Another aspect of the present invention relates to switching circuit mentioned above application in the switching device of low-voltage equipment.This low-voltage equipment can have (for example) three such switching circuits, so that three-phase current is controlled.
The method according to this invention, above-mentioned purpose is reached by the feature of claim 16.
Described method is used at least one circuit breaker is controlled, and described circuit breaker is used for the power on/off inductive load.This method is: earlier the short circuit current that flows through circuit breaker is detected; Subsequently described at least one circuit breaker is disconnected, thereby trigger thyristor or triac by the voltage drop on the circuit breaker, before short circuit current zero passage next time by thyristor that is triggered or the described circuit breaker of triac cross-over connection that is triggered.
Description of drawings
By accompanying drawing embodiments of the invention are elaborated below, wherein:
Fig. 1 is first partial circuit diagram, and expression has first embodiment of thyristor; And
Fig. 2 is second partial circuit diagram, and expression has second embodiment of triac.
Embodiment
Same components is all represented with same reference numeral in each accompanying drawing.
Exemplarily shown an inductive load X among the embodiment shown in Figure 1
LWherein, by the circuit breaker of two differential concatenations, form is MOS field-effect transistor (MOSFET) M1 and the M2 shown in the accompanying drawing, can be to flowing through this inductive load X
LElectric current carry out break-make.Inductive load X
LGND links to each other with ground wire, and MOSFET M1 links to each other with phase line OC.If there is a plurality of (for example three) phase line OC, can adopt three switching circuits described hereinafter, make each electric current from phase line OC process inductive load X respectively
LBe connected to ground wire GND.In the present embodiment, flow through inductive load X
LElectric current be alternating current (AC power supplies), thereby by with two MOSFET M1 and M2 differential concatenation, can on two senses of current of alternating current, control or cut off electric current.For controlling MOSFET M1 and M2, the gate input of MOSFET M1 and M2 links to each other with control logic circuit 1.
For the switching device in (for example) low-voltage equipment, except that normal on-off function, two MOSFET M1 and M2 must can also the cutting-offs of short-circuit.Fig. 1 represents short circuit with a lightning shape arrow.Owing to all might occur on the random time point of short circuit in one-period, must as soon as possible it be limited and/or be disconnected, therefore,, just can't effectively disconnect short circuit during current over-zero if short circuit current is not taked in advance restriction next time.
Have only when being stored under the situation that the energy in the inductance can be transformed, could cut off electric current immediately by MOSFET M1 and M2.Wherein, inductive load X
LCan be regarded as any inductance that all can have an effect under short-circuit conditions, for example the inductance of the inductance of loading coil or power supply (electrical network) all unifies to be expressed as inductive load X in the present embodiment
LCut off the moment of electric current, inductance X
LIn still store big energy.If rapidly cutting-off of short-circuit electric current will cause very high overvoltage, thereby cause MOSFETM1 and/or M2 impaired.
By means of embodiment shown in Figure 1, can in electronic switching circuit, carry out effective current limliting earlier, thereby when current over-zero next time, cut off the circuit between phase line OC and the ground wire GND.The implementation of current limliting is: initiatively insert an equivalent load RL, so that " end or stop " that load under the short-circuit conditions that can play a role under the normal operating conditions carried out the part compensation at least.Described equivalent load RL must be the longest carries the electric current of flowing through on it at half electrical network in the cycle, promptly the longest under the 50 Hz mains frequency situations is 10 ms, therefore, even under the possible very large situation of current strength, equivalent load RL still can only absorb less energy.
MOSFET M1 shown in Figure 1 and M2 have a built-in or external sustained diode respectively
M1And D
M2If two MOSFET M1 and M2 all are in conducting state, electric current just can pass through MOSFET M1 and M2 and inductive load X
LFlow to neutral line GND or second phase line (not illustrating) from phase line OC.And be in when being blocked state as MOSFET M1 and M2, circuit will disconnect.
Described circuit has two diode D1 and D2, thyristor Th, an equivalent load RL and a trigger equipment that is used for thyristor, and it has element V3 and R1.Generally speaking this circuit can make individual devices, also can be integrated on the semiconductor chip by so-called " intelligent power " (smart power) solution.
When being short-circuited, electric current can rise to higher value in a short period of time, and therefore, the short circuit recognition device in the control logic circuit 1 can disconnect two MOSFET M1 and M2 as early as possible.For example, can detect by current limit value and carry out short circuit identification, perhaps raise according to the voltage on MOSFET M1 and/or the M2 and carry out short circuit identification, it is that saturation current owing to MOSFET M1, M2 is exceeded and causes that this voltage raises.
Since electric current cut off rapidly and circuit in have inductance X
L, an obvious high pressure greater than common operating voltage can appear at least one among MOSFET M1 or the M2.In a single day this high voltage surpasses the threshold voltage that triggers varistor V3, triggers this varistor V3 and will become low-ohm resistors, and the electric current that flows through will trigger thyristor Th.In the case, electric current can further flow through resistor R L and one of them diode D1 or D2, thereby reaches the purpose of over-voltage.During current over-zero, thyristor Th can cut off electric current automatically next time.
Regardless of instantaneous electric power polarity, all can realize above-mentioned functions reliably by two diode D1 and D2.During positive half wave (being that phase line OC is connected on the positive voltage), electric current flows through D1, RL, Th and sustained diode under the situation that protective circuit activates
M2When bearing half-wave, electric current flows through D2, RL, Th and sustained diode
M1
Thyristor Th (RL is the same with equivalent load) only needs the logical short period.Therefore, can adopt device less relatively, that only need have an anti-overload ability of half electrical network Cycle Length to realize this two elements.The size of resistor R L so determines, makes voltage that resistor R L produced under the maximum situation of electric current (saturation current that refers to MOSFETM1, the M2 herein) reverse voltage less than MOSFET M1 or M2.
Circuit among the embodiment shown in Figure 1 can not adopt fuse (fuse), but can the cutting-off of short-circuit, thereby need not to trigger a stack circuit breaker.The RC element that a varistor that designs at short circuit current need be set for this reason or design at short circuit current.Though the relatively large impulse current of varistor energy absorption intensity, this situation tends to be restricted.The RC element needs a bigger electric capacity, from inductance X
LThe middle energy that absorbs.If by " active-clamp " that power transistor is realized, be about to power transistor and just in time be controlled to the state that voltage still is lower than maximum limit, need these semiconductors to take the over dimensioning design.On the contrary, initiatively insert equivalent load RL, then only need to adopt the MOSFET M1 and the M2 that design at normal operating conditions.
Execution mode shown in Figure 2 replaces thyristor with triac TR, and triac TR connects with equivalent load RL, under the state that is triggered with two MOSFET M1 and M2 cross-over connection.Constitute triac TR circuits for triggering be a bidirectional trigger diode Di and (just being provided with an in case of necessity) resistor R 1.Wherein, the trigger current at available the two poles of the earth triggers triac TR.Therefore, no matter be which kind of instantaneous electric power polarity when being short-circuited, all can trigger triac TR in principle.
Claims (16)
1. switching circuit, comprising: at least one is used for break-make load (X
L) circuit breaker (M1, M2); A resistor (RL); A thyristor (Th) or a triac (TR); And a plurality of members (R1, Di, V3), be used for according to described circuit breaker (M1, M2) voltage drop on triggers described thyristor (Th) or described triac (TR); Wherein, (M1, connected mode M2) is connected with each other with described at least one circuit breaker of cross-over connection for described resistor (RL) and described thyristor (Th) or described triac (TR).
2. switching circuit according to claim 1, wherein, (M1's described circuit breaker M2) links to each other with control logic circuit (1).
3. switching circuit according to claim 2, wherein, described control logic circuit (1) be construed as under short-circuit conditions disconnect described circuit breaker (M1, M2).
4. switching circuit according to claim 3, wherein, described control logic circuit (1) has the measurement member, and described measurement member is used for mensuration and flows through described circuit breaker (M1, short circuit current M2).
5. switching circuit according to claim 1, wherein, described circuit breaker be power semiconductor (M1, M2).
6. switching circuit according to claim 5, wherein, described power semiconductor be field-effect transistor (M1, M2).
7. switching circuit according to claim 5, wherein, described power semiconductor is igbt (IGBT).
8. switching circuit according to claim 1, wherein, described resistor (RL) is connected with described thyristor (Th) or described triac (TR).
9. switching circuit according to claim 1, wherein, described member comprises rheostat (V3), described rheostat links to each other with the grid of described thyristor (Th) or the grid of described triac (TR).
10. switching circuit according to claim 1, wherein, described member comprises a bidirectional trigger diode (Di), described bidirectional trigger diode links to each other with the grid of described thyristor (Th) or the grid of described triac (TR).
11. switching circuit according to claim 5, wherein, be provided with at least two power semiconductor (M1, M2), two mos field effect transistor (Metal OxidSemiconductor Field Effect Transistor particularly, MOSFET) or two igbts (Insulated Gate B ipolar Transistor, IGBT).
12. switching circuit according to claim 11, wherein, (M1 all is connected with a fly-wheel diode (D between source terminal M2) (Source) and the drain terminal (Drain) to each described power semiconductor
M1, D
M2).
13. switching circuit according to claim 1, wherein, two diode (D1, D2) with described circuit breaker (M1, M2) and/or described thyristor (Th) link to each other, and its continuous mode makes and to be in when being triggered state when described thyristor (Th), and (D1 flows through and flows through from described thyristor (Th) at least in part on D2) from one of them diode for electric current.
14. switching circuit according to claim 1, wherein, the size of described resistor (RL) so determines, makes voltage drop on described resistor (RL) under the situation of maximum current less than at least one described circuit breaker (M1, reverse voltage M2).
15. the application of switching circuit according to claim 1 in the switching device of low-voltage equipment.
16. a control method is used to control at least one and is used for break-make load (X
L) circuit breaker (M1, M2), power semiconductor particularly, wherein,
By described at least one circuit breaker (M1 M2) detects short circuit current, and
With described at least one circuit breaker (M1, M2) disconnect, thereby by described circuit breaker (M1, M2) voltage drop on triggers described thyristor (Th) or triac (TR), make at described short circuit current next time before the zero passage, thyristor that is triggered (Th) or the described circuit breaker of triac (TR) cross-over connection that is triggered (M1, M2).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/DE2005/001050 WO2006133658A1 (en) | 2005-06-13 | 2005-06-13 | Switching circuit and method for the operation of a circuit-breaker |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101199092A true CN101199092A (en) | 2008-06-11 |
| CN101199092B CN101199092B (en) | 2011-05-25 |
Family
ID=35783206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800501343A Expired - Fee Related CN101199092B (en) | 2005-06-13 | 2005-06-13 | Switching circuit and method for controlling circuit breaker |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN101199092B (en) |
| DE (1) | DE112005003610A5 (en) |
| WO (1) | WO2006133658A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064549A (en) * | 2009-11-11 | 2011-05-18 | 王海 | Switching method and switching switch circuit of AC capacitor |
| CN103718462A (en) * | 2011-07-21 | 2014-04-09 | 西门子公司 | Circuit arrangement for switching a current, and method for operating a semiconductor circuit breaker |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103631187B (en) * | 2013-12-12 | 2017-06-06 | 国家电网公司 | A kind of high-speed switch control device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091817A (en) * | 1984-12-03 | 1992-02-25 | General Electric Company | Autonomous active clamp circuit |
| US4679112A (en) * | 1986-07-31 | 1987-07-07 | General Motors Corporation | Transistor protection circuit for automotive motor control applications |
-
2005
- 2005-06-13 WO PCT/DE2005/001050 patent/WO2006133658A1/en active Application Filing
- 2005-06-13 CN CN2005800501343A patent/CN101199092B/en not_active Expired - Fee Related
- 2005-06-13 DE DE112005003610T patent/DE112005003610A5/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064549A (en) * | 2009-11-11 | 2011-05-18 | 王海 | Switching method and switching switch circuit of AC capacitor |
| CN102064549B (en) * | 2009-11-11 | 2016-03-16 | 王海 | AC capacitor operation/cutting method and fling-cut switch circuit |
| CN103718462A (en) * | 2011-07-21 | 2014-04-09 | 西门子公司 | Circuit arrangement for switching a current, and method for operating a semiconductor circuit breaker |
| CN103718462B (en) * | 2011-07-21 | 2016-06-29 | 西门子公司 | For the circuit arrangement of electric current of make-and-break and the method for running semiconductor circuit breaker |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112005003610A5 (en) | 2008-03-27 |
| CN101199092B (en) | 2011-05-25 |
| WO2006133658A1 (en) | 2006-12-21 |
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