CN101184359A - Low power microwave plasma source - Google Patents
Low power microwave plasma source Download PDFInfo
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- CN101184359A CN101184359A CNA2007101719445A CN200710171944A CN101184359A CN 101184359 A CN101184359 A CN 101184359A CN A2007101719445 A CNA2007101719445 A CN A2007101719445A CN 200710171944 A CN200710171944 A CN 200710171944A CN 101184359 A CN101184359 A CN 101184359A
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Abstract
The invention relates to a microwave plasma source with small power, belonging to the technical field for microwave plasma source. The plasma source needs to be combined with a microwave source, comprising a grounding surface, a substrate, a coaxial feed, a surface microstrip spire inductance coil, a transitional microstrip line, a turning capacitor and an allocating capacitor; wherein, the surface microstrip spire inductance coil, the transitional microstrip line, the turning capacitor and an electrode flake of the allocating capacitor deposit on the upper surface of the substrate; the beginning end of the surface microstrip spire inductance coil is connected with one electrode flake of the allocating capacitor through the transitional microstrip line and the turning capacitor; the grounding surface deposits on the lower surface of the substrate as the other electrode flake of the allocating capacitor; the terminal of the surface microstrip spire inductance coil is connected with the other electrode flake of the allocating capacitor by a distributed capacitor; the coaxial feed is astraddle connected with both ends of the allocating capacitor; when in use, the output signal of the microwave source is fed into the both ends of the allocating capacitor. The invention has the advantages of compact size, easy promotion for the microwave plasma body and other advantages.
Description
Technical field
The present invention relates to a kind of low power microwave plasma source,, belong to the technical field of microwave plasma source in particular to a kind of small-power planar microstrip spiral inductance coupling microwave plasma source.
Technical background
Low power microwave plasma technology based on micro-system is a new and high technology that integrates microelectric technique, microwave technology and plasma technique that grew up along with the development of MEMS technology in recent years.Since MEMS have low-loss, high isolation, small size, low manufacturing cost, easily with characteristics such as IC and MMIC circuit be integrated, so microwave plasma can make the structure and the huge change of characteristic generation of plasma in conjunction with MEMS technology.And inductively coupled plasma (Inductively-coupled plasma is called for short ICP) is a kind of mode of using inductance coil to carry out electrodeless discharge generation plasma.Small-power planar microstrip spiral inductance coupling microwave plasma based on micro-system is compared with the plasma of other form, have simple in structure, long service life, in stable condition, and advantage such as electrodeless pollution, particularly easier and other MEMS device be integrated.Principal mode comprises cylindrical spiral coil and planar shaped helical coil (non-little band) etc. at present.
Microwave plasma can be widely used in high-tech areas such as new material, microelectronics and chemistry, development and extensive use (as MEMS etc.) along with micro-system, circuit size requires at millimeter and micron order, and the large-area microwave plasma of former the sort of centimetre even meter level is no longer suitable.Therefore, how to encourage the microwave plasma of smaller szie just to become the key of problem with micropower.Adopt micro-band technique to pass through the micropower microwave excitation exactly based on the small-power planar microstrip spiral inductance of micro-system coupling microwave plasma source and play minute sized plasma, as making gas ionization, produce the plasma of 10 millimeters even 0.2 mm size with the microwave power that is no more than 3～5 watts.This technology has a good application prospect in fields such as the sterilizing of biological MEMS, the processing of small-size materials, little chemical analysis system and microdrivers.
According to radio frequency or microwave circuit theory, planar microstrip spiral inductance coil can equivalence be a distributed circuit, i.e. the series-parallel circuit of resistance, inductance and electric capacity.For efficient excitation small-power inductance coupling microwave plasma, be necessary the structure of planar microstrip helical coil is optimized design, reduce the resistance of coil, make the quality factor maximum of helical coil, realize the allotment of low power microwave plasma source and tuning simultaneously, so just can increase the power that enters plasma, thereby improve the efficient of plasma excitation.
Summary of the invention
The technical problem to be solved in the present invention is to release a kind of low power microwave plasma source.This plasma source has the following advantages: the quality factor height, have and the impedance matching preferably of feed input, and reflect for a short time, can realize tuning well and allotment, thereby improve the efficient of plasma excitation.
The present invention is resolved by making above-mentioned technical problem by the following technical solutions.This plasma source, need and the microwave source coupling, contain ground plane, substrate, feed is coaxial, planar microstrip spiral inductance coil, the transition microstrip line, tuning capacity and allotment electric capacity, planar microstrip spiral inductance coil, the transition microstrip line, a pole piece of tuning capacity and allotment electric capacity is deposited on the upper surface of substrate, the top of planar microstrip spiral inductance coil is through the transition microstrip line, tuning capacity is connected with a pole piece of allotment electric capacity, ground plane is deposited on the lower surface of substrate as another pole piece of allotment electric capacity, the terminal of planar microstrip spiral inductance coil is connected through distributed capacitance another pole piece with allotment electric capacity, the coaxial two ends that are connected across allotment electric capacity of feed, during work, the output signal of microwave source is added in the two ends of allotment electric capacity by the coaxial feedback of feed.
Now be described with reference to the accompanying drawings technical scheme of the present invention.A kind of low power microwave plasma source, this plasma source, need and the microwave source coupling, it is characterized in that, contain ground plane 10, substrate 20, feed coaxial 1, little band spiral inductance coil 3, transition microstrip line 2, tuning capacity 4 and allotment electric capacity 5, the constituent material of substrate 20 is high temperature resistant, corrosion resistant low loss dielectric, ground plane 10, little band spiral inductance coil 3, transition microstrip line 2, the constituent material of the pole piece of the pole piece of tuning capacity 4 and allotment electric capacity 5 is metal materials of high conductivity, little band spiral inductance coil 3, transition microstrip line 2, tuning capacity 4 and allotment electric capacity 5 are plane electronics elements, the external diameter of little band spiral inductance coil 3 is between 3.5mm～4.5mm, the live width w of little band spiral inductance coil 3 is between 20 μ m～140 μ m, the turn-to-turn of little band spiral inductance coil 3 apart from s between 10 μ m～70 μ m, the number of turn n of little band spiral inductance coil 3 is between 2～8, first pole piece 41 and second pole piece 42 of tuning capacity 4 are positioned at same plane, little band spiral inductance coil 3, transition microstrip line 2, the superior pole piece 51 of tuning capacity 4 and allotment electric capacity 5 is deposited on the upper surface 21 of substrate 20, ground plane 10 is deposited on the lower surface 22 of substrate 20 as the inferior pole piece 52 of allotment electric capacity 5, the top 31 of little band spiral inductance coil 3 is through transition microstrip line 2, tuning capacity 4 is connected with the superior pole piece 51 of allotment electric capacity 5, the terminal 32 of little band spiral inductance coil 3 is connected through the inferior pole piece 52 of distributed capacitance with allotment electric capacity 5, feed coaxial 1 is connected across the two ends of allotment electric capacity 5 respectively with superior pole piece 51 and inferior pole piece 52 ways of connecting with its stem stem 33 and overcoat 34, the resonance frequency in this plasma source is between 1GHz～3.5GHz, during work, the output signal of microwave source is added in the two ends of allotment electric capacity 5 by coaxial 1 feedback of feed.
Technical scheme of the present invention is further characterized in that described high temperature resistant, corrosion resistant low loss dielectric is sapphire, High Resistivity Si, porous silicon, ruby or high-frequency ceramic.
Technical scheme of the present invention is further characterized in that the metal material of described high conductivity is gold or copper.
Technical scheme of the present invention is further characterized in that tuning capacity 4 is interdigital capacitors.
Technical scheme of the present invention is further characterized in that, the external diameter of little band spiral inductance coil 3, live width w, turn-to-turn are respectively 4mm, 50 μ m, 40 μ m and 3 apart from s and number of turn n, and the resonance frequency of described low power microwave plasma source and quality factor q are respectively 2.48GHz and 500.
Technical scheme of the present invention is further characterized in that this plasma source is the low power microwave plasma source from humorous structure, and transition microstrip line 2 closes And with tuning capacity 4 and becomes transition microstrip line 2.
Low power microwave plasma source of the present invention has following advantage:
1, little band spiral inductance coupling realizes the miniaturization of microwave plasma source.
2, quality factor of circuit height helps the excitation of microwave plasma, and the input microwave power is little of 200mW, just can encourage stable microwave plasma.
3, can realize the tuning of circuit and allotment, the efficient height of plasma excitation well.
Description of drawings
Fig. 1 is the plan structure schematic diagram of low power microwave plasma source, wherein 1 is that feed is coaxial, the 2nd, transition microstrip line, the 3rd, little band spiral inductance coil, the 4th, tuning capacity, the 5th, allotment electric capacity, the 20th, substrate, the 31st, the top of little band spiral inductance coil 3, the 32nd, the terminal of little band spiral inductance coil 3, the 51st, the superior pole piece of allotment electric capacity 5, X-X is the vertical profile section line.
Fig. 2 is the vertical profile sectional view of low power microwave plasma source at X-X vertical profile section line place, and wherein 10 is ground planes, the 33rd, and stem stem, the 34th, overcoat, the 52nd, the inferior pole piece of allotment electric capacity 5.
Fig. 3 is the plan structure schematic diagram from the low power microwave plasma source of humorous structure, and wherein, transition microstrip line 2 closes And with tuning capacity 4 and becomes transition microstrip line 2.
Fig. 4 is the experimental rig schematic diagram of low power microwave plasma source gas discharge.
Embodiment
For a better understanding of the present invention, now further specify technical scheme of the present invention in conjunction with the accompanying drawings and embodiments.All embodiment have and the identical structure of " summary of the invention " described low power microwave plasma source above.Each embodiment is only enumerated the optimal value of technical data.
Described high temperature resistant, corrosion resistant low loss dielectric is that dielectric constant and thickness are respectively 2.5 and the high-frequency ceramic of 0.6mm, the metal material of described high conductivity is a copper, tuning capacity 4 is interdigital capacitors, the external diameter of little band spiral inductance coil 3, live width w, turn-to-turn are respectively 4mm, 50 μ m, 40 μ m and 3 apart from s and number of turn n, the resonance frequency of described low power microwave plasma source and quality factor q are respectively 2.48GHz and 500, and the output signal frequency of the microwave source of coupling and power are respectively 2.48GHz and 458mW.
High temperature resistant, corrosion resistant low loss dielectric as described adopts sapphire, High Resistivity Si, porous silicon or ruby, available can with the much the same low power microwave plasma source of the performance of embodiment 1.
During test, glass tube 60 covers little band spiral inductance coil 3, and glass tube 60 is vacuumized 64, with the seam of epoxy glue 61 sealed glass tubes 60 with little band spiral inductance coil 3.The output signal of the microwave source of coupling is presented the two ends that are added in allotment electric capacity 5 by cable 62 inputs through the stem stem 33 and the overcoat 34 of feed coaxial 1.Power in the microwave source output signal of vacuum degree and coupling is respectively under 5Pa and the condition greater than 200mW, and the air in the glass tube 60 begin discharge, have encouraged stable microwave plasma 63.
Described high temperature resistant, corrosion resistant low loss dielectric is that dielectric constant and thickness are respectively 2.5 and the high-frequency ceramic of 0.6mm, the metal material of described high conductivity is a copper, transition microstrip line 2 closes And with tuning capacity 4 and becomes transition microstrip line 2, the external diameter of little band spiral inductance coil 3, live width w, turn-to-turn are respectively 4mm, 50 μ m, 40 μ m and 3 apart from s and number of turn n, the resonance frequency of described low power microwave plasma source and quality factor q are respectively 2.48GHz and 500, and the output signal frequency of the microwave source of coupling and power are respectively 2.48GHz and 458mW.
High temperature resistant, corrosion resistant low loss dielectric as described adopts sapphire, High Resistivity Si, porous silicon or ruby, available can with the much the same low power microwave plasma source of the performance of embodiment 1.
The layout of experimental rig and operation and embodiment's 1 is identical, just repeats no more here.
Operation principle.Technical scheme of the present invention guarantees that described low power microwave plasma source is the very high resonator of quality factor (Q) value.The low power microwave plasma source that embodiment 1 and embodiment 2 come to this, during their work, as long as the microwave source output signal frequency of coupling equates with their resonance frequency or is approaching, their reflection coefficient reduces, and the major part of the microwave output power of the microwave source of coupling enters in the described microwave plasma source.When described microwave power during greater than the microwave discharge power under certain gas pressure, gas begins discharge.Gas is air, nitrogen or inert gas.
Claims (6)
1. low power microwave plasma source, this plasma source, need and the microwave source coupling, it is characterized in that, contain ground plane (10), substrate (20), feed coaxial (1), little band spiral inductance coil (3), transition microstrip line (2), tuning capacity (4) and allotment electric capacity (5), the constituent material of substrate (20) is high temperature resistant, corrosion resistant low loss dielectric, ground plane (10), little band spiral inductance coil (3), transition microstrip line (2), the constituent material of the pole piece of the pole piece of tuning capacity (4) and allotment electric capacity (5) is the metal material of high conductivity, little band spiral inductance coil (3), transition microstrip line (2), tuning capacity (4) and allotment electric capacity (5) are the plane electronics elements, the external diameter of little band spiral inductance coil (3) is between 3.5mm～4.5mm, the live width w of little band spiral inductance coil (3) is between 20 μ m～140 μ m, the turn-to-turn of little band spiral inductance coil (3) apart from s between 10 μ m～70 μ m, the number of turn n of little band spiral inductance coil (3) is between 2～8, first pole piece (41) and second pole piece (42) of tuning capacity (4) are positioned at same plane, little band spiral inductance coil (3), transition microstrip line (2), the superior pole piece (51) of tuning capacity (4) and allotment electric capacity (5) is deposited on the upper surface (21) of substrate (20), ground plane (10) is deposited on the lower surface (22) of substrate (20) as the inferior pole piece (52) of allotment electric capacity (5), the top (31) of little band spiral inductance coil (3) is through transition microstrip line (2), tuning capacity (4) is connected with the superior pole piece (51) of allotment electric capacity (5), the terminal (32) of little band spiral inductance coil (3) is connected through the inferior pole piece (52) of distributed capacitance with allotment electric capacity (5), feed coaxial 1 is connected across the two ends of allotment electric capacity (5) respectively with superior pole piece (51) and inferior pole piece (52) ways of connecting with its stem stem (33) and overcoat (34), the resonance frequency in this plasma source is between 1GHz～3.5GHz, during work, the output signal of microwave source is added in the two ends of allotment electric capacity (5) by feed coaxial (1) feedback.
2. low power microwave plasma source according to claim 1 is characterized in that, described high temperature resistant, corrosion resistant low loss dielectric is sapphire, High Resistivity Si, porous silicon, ruby or high-frequency ceramic.
3. low power microwave plasma source according to claim 1 is characterized in that, the metal material of described high conductivity is gold or copper.
4. low power microwave plasma source according to claim 1 is characterized in that, tuning capacity (4) is an interdigital capacitor.
5. low power microwave plasma source according to claim 1, it is characterized in that, described high temperature resistant, corrosion resistant low loss dielectric is that dielectric constant and thickness are respectively 2.5 and the high-frequency ceramic of 0.6mm, the metal material of described high conductivity is a copper, tuning capacity (4) is an interdigital capacitor, the external diameter of little band spiral inductance coil (3), live width w, turn-to-turn is respectively 4mm apart from s and number of turn n, 50 μ m, 40 μ m and 3, the resonance frequency of described low power microwave plasma source and quality factor q are respectively 2.48GHz and 500, and the output signal frequency of the microwave source of coupling and power are respectively 2.48GHz and 458mW.
6. low power microwave plasma source according to claim 1, it is characterized in that, described high temperature resistant, corrosion resistant low loss dielectric is that dielectric constant and thickness are respectively 2.5 and the high-frequency ceramic of 0.6mm, the metal material of described high conductivity is a copper, transition microstrip line (2) closes And with tuning capacity (4) and becomes transition microstrip line (2), the external diameter of little band spiral inductance coil (3), live width w, turn-to-turn is respectively 4mm apart from s and number of turn n, 50 μ m, 40 μ m and 3, the resonance frequency of described low power microwave plasma source and quality factor q are respectively 2.48GHz and 500, and the output signal frequency of the microwave source of coupling and power are respectively 2.48GHz and 458mW.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101719445A CN101184359A (en) | 2007-12-07 | 2007-12-07 | Low power microwave plasma source |
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| CNA2007101719445A CN101184359A (en) | 2007-12-07 | 2007-12-07 | Low power microwave plasma source |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412800A (en) * | 2011-11-29 | 2012-04-11 | 上海交通大学 | Electrically-adjustable micro-electromechanical systems (MEMS) resonator with series and parallel RLC (circuit containing resistors, inductors and capacitors) |
| CN102740580A (en) * | 2012-06-27 | 2012-10-17 | 华东师范大学 | Small-power microwave microplasma integration source |
| CN104955259A (en) * | 2015-04-27 | 2015-09-30 | 华东师范大学 | Planar miniwatt microwave microplasma circular-ring-shaped array source |
| CN105164048A (en) * | 2012-05-25 | 2015-12-16 | 株式会社趯易科技服务 | CO2 recycling device and CO2 recycling system |
| CN106206537A (en) * | 2015-05-27 | 2016-12-07 | 硅谷实验室公司 | The pectination terminal of planar integrated circuit inducer |
| CN113404658A (en) * | 2021-06-30 | 2021-09-17 | 哈尔滨工业大学 | Self-neutralizing radio frequency ion thruster |
| CN114400128A (en) * | 2021-12-27 | 2022-04-26 | 北京遥感设备研究所 | Planar spiral inductor |
-
2007
- 2007-12-07 CN CNA2007101719445A patent/CN101184359A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412800A (en) * | 2011-11-29 | 2012-04-11 | 上海交通大学 | Electrically-adjustable micro-electromechanical systems (MEMS) resonator with series and parallel RLC (circuit containing resistors, inductors and capacitors) |
| CN105164048A (en) * | 2012-05-25 | 2015-12-16 | 株式会社趯易科技服务 | CO2 recycling device and CO2 recycling system |
| CN105164048B (en) * | 2012-05-25 | 2016-12-21 | 株式会社趯易科技服务 | Carbon dioxide recovering apparatus and carbon dioxide recovery system, in accordance |
| CN102740580A (en) * | 2012-06-27 | 2012-10-17 | 华东师范大学 | Small-power microwave microplasma integration source |
| CN102740580B (en) * | 2012-06-27 | 2015-08-19 | 华东师范大学 | A kind of Small-power microwave microplasma integration source |
| CN104955259A (en) * | 2015-04-27 | 2015-09-30 | 华东师范大学 | Planar miniwatt microwave microplasma circular-ring-shaped array source |
| CN104955259B (en) * | 2015-04-27 | 2018-03-23 | 华东师范大学 | A kind of plane low power microwave microplasma circular array source |
| CN106206537A (en) * | 2015-05-27 | 2016-12-07 | 硅谷实验室公司 | The pectination terminal of planar integrated circuit inducer |
| CN106206537B (en) * | 2015-05-27 | 2021-05-04 | 硅谷实验室公司 | Comb terminal of planar integrated circuit inductor |
| CN113404658A (en) * | 2021-06-30 | 2021-09-17 | 哈尔滨工业大学 | Self-neutralizing radio frequency ion thruster |
| CN113404658B (en) * | 2021-06-30 | 2022-03-18 | 哈尔滨工业大学 | Self-neutralizing radio frequency ion thruster |
| CN114400128A (en) * | 2021-12-27 | 2022-04-26 | 北京遥感设备研究所 | Planar spiral inductor |
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Open date: 20080521 |