CN104955259A - Planar miniwatt microwave microplasma circular-ring-shaped array source - Google Patents
Planar miniwatt microwave microplasma circular-ring-shaped array source Download PDFInfo
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- CN104955259A CN104955259A CN201510206801.8A CN201510206801A CN104955259A CN 104955259 A CN104955259 A CN 104955259A CN 201510206801 A CN201510206801 A CN 201510206801A CN 104955259 A CN104955259 A CN 104955259A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000005284 excitation Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 8
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000004381 surface treatment Methods 0.000 description 1
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Abstract
The invention discloses a planar miniwatt microwave microplasma circular-ring-shaped array source which comprises a microstrip transmission line concentric array, a central common grounding point, a coupling loop, a feed conductor and a grounding conduction band, the microstrip transmission line concentric array comprises at least two array units which are arranged at the two sides the feed conductor respectively, each array unit is connected via the coupling loop, the feed conductor comprises at least two conduction bands, each conduction band is provided with at least one feeding point, the central common grounding point is arranged at the connected position of the two feed conduction bands, one end of each array unit is connected with the central common grounding point, the feed conduction bands and the array units are distributed in a radial circular ring shape by taking the central common grounding point as the circular center, the grounding conduction band comprises at least two grounding guide blocks, each grounding guide block is arranged at the other ends of the array unit and the feed conduction band, a slit is formed therebetween, and the edge of the grounding guide block is grounded. The array source has the advantages of low cost, low input power and uniform excitation.
Description
Technical Field
The invention relates to the technical field of microwave plasma sources, in particular to a planar low-power microwave microplasma circular array source based on a microstrip transmission line.
Background
The low-power microwave micro-plasma technology is a high and new technology which integrates the micro-electronic technology, the microwave technology and the plasma technology and is developed along with the development of the MEMS technology in recent years. Microplasmas include direct current microplasmas, radio frequency microplasmas and microwave microplasmas. When the discharge space is further reduced to a nano size, it becomes a nano plasma. Because the micro-electro-mechanical system (MEMS) has the characteristics of low loss, high isolation, small volume, low manufacturing cost, easy integration with IC and MMIC circuits and the like, the low-power packaging and active integration of microwave plasma can be realized through the MEMS process. The combination of microwave plasma with MEMS processes can result in dramatic changes in the structure and properties of the plasma.
The microwave plasma can be widely applied to high-tech fields such as new materials, microelectronics, chemistry and the like, and along with the miniaturization development of the microwave plasma, the circuit size is required to be in millimeter level, micron level or even nanometer level. The planar low-power microwave micro-plasma circular array source is a micro-strip transmission line circular array processed by adopting an MEMS (micro-electromechanical systems) process, and micro-plasma with the size of 5mm or even 0.2 mm is excited in each unit by low-power microwave not more than 200 milliwatts. The technology has better application prospect in the fields of surface treatment of low-cost annular low-temperature materials (such as plastics, biological products and the like), microwave light sources and the like, and thus the technology is more and more widely concerned.
At present, a radio frequency plasma circular array source mainly adopts a quarter-wavelength microstrip transmission line structure with 6 units, and when the resonant frequency is about 1GHz and the input power is not more than 5W, small-size circular micro-plasma with the diameter of about 2.5mm is excited at a gap between the tail ends of the transmission lines through single-point feeding. Due to the array source with the structure, the resonance mode and the coupling coefficient are unstable, so that the distribution of excited microplasma is not uniform, and in severe cases, the shape of the plasma is irregular, and the size of the plasma is too small.
In order to overcome the defects in the prior art, a planar small-power microwave microplasma circular array source with a brand-new structure is provided.
Disclosure of Invention
The invention provides a planar low-power microwave microplasma circular array source, which comprises: the microstrip transmission line concentric array, the center common grounding point, the coupling ring, the feed conductor and the grounding conduction band; the microstrip transmission line concentric array comprises at least two array units; the array units are arranged on two sides of the feed conductor; each of the array elements on each side of the feed conductor is connected by the coupling loop; the feed conductor comprises at least two feed conduction bands, the feed conduction bands are connected at respective one ends, and each feed conduction band is provided with at least one feed point; the central common grounding point is arranged at the connection position of the two feed conduction bands; one end of each array unit is connected with the central common grounding point; the feed conduction band and the array unit are distributed in a circular ring shape in a radial manner by taking a central common grounding point as a circle center; the grounding guide band comprises at least two grounding guide blocks, each grounding guide block is arranged at the other end, far away from the central common grounding point, of the array unit and the feeding guide band, and a gap is formed between each grounding guide block and the end face of the other end of the array unit or the feeding guide band; the edge of the grounding guide block is grounded.
In the planar low-power microwave microplasma circular ring array source, the length of each array unit is odd multiple of a quarter of the waveguide wavelength, the width range is 1-2 mm, and the number is 6-50.
In the planar low-power microwave microplasma circular array source, the width range of the gap is 10-200 mu m, and the resonant frequency is 2.45 GHz.
In the planar low-power microwave microplasma circular array source, the width range of the coupling ring is 1-10 mm.
In the planar low-power microwave microplasma circular array source, the width of the feed conduction band is greater than or equal to the width of the array unit.
In the planar low-power microwave microplasma circular ring array source, the feed conducting strip is provided with at least one feed point.
In the planar low-power microwave microplasma circular ring array source, the length of the grounding guide block is greater than the width of the array unit, the length range is 2 mm-4 mm, and the width range is 4 mm-20 mm.
In the planar low-power microwave microplasma circular array source, the microstrip transmission line concentric array, the coupling ring, the feed conduction band and the grounding conduction band are made of gold or copper.
The planar low-power microwave microplasma circular ring array source further comprises a substrate arranged at the bottoms of the microstrip transmission line concentric array, the coupling ring, the feed conduction band and the grounding conduction band.
In the planar low-power microwave microplasma circular array source, the substrate is made of sapphire, high-resistance silicon, porous silicon, ruby or high-frequency ceramic.
In the planar low-power microwave microplasma circular array source, the bottom of the substrate is provided with a grounding plate, and the grounding plate is connected with the central common grounding point and the grounding conduction band.
The invention has the beneficial effects that:
the planar low-power microwave microplasma circular array source provided by the invention is a device for exciting microwave microplasma, and has the advantages of low cost, low input power, uniform excitation of microplasma circular array and the like. The 2.45GHz plane microstrip circular array source based on the quarter-wavelength transmission line reduces the cost of a microwave power source and a circuit; the coupling loop can improve the coupling coefficient and reduce the input power; and double feeding is adopted on the feeding conduction band, so that the excitation of the microplasma at the gap is uniform, and the size of the microplasma circular array source is increased. The microwave micro-plasma array adopts the array units and the feed conductors which are distributed in the annular radiation mode, so that the microwave micro-plasma array has an annular structure with a larger size, and efficient treatment of materials with specific shapes is facilitated.
Drawings
FIG. 1 is a schematic top view of a planar low power microwave microplasma toroidal array source of the present invention.
FIG. 2 is an enlarged schematic view of the slots in the planar low power microwave microplasma circular array unit of the present invention.
FIG. 3 is a schematic diagram of a longitudinal cross section of a planar low power microwave microplasma circular array source of the present invention.
Fig. 4(a) is an equivalent circuit diagram of a microwave microplasma linear array source unit based on a quarter-wave microstrip resonator, and fig. 4(b) is a voltage amplitude variation curve on a quarter-wave microstrip transmission line.
Detailed Description
The present invention will be described in further detail with reference to the following specific examples and the accompanying drawings. The procedures, conditions, experimental methods and the like for carrying out the present invention are general knowledge and common general knowledge in the art except for the contents specifically mentioned below, and the present invention is not particularly limited.
Referring to fig. 1 and 2, the present embodiment provides a planar low-power microwave microplasma circular array source, which includes a microstrip transmission line concentric array 1, a central common ground point 2, a coupling ring 3, a feed conductor 4 and a ground conduction band 5. The microstrip transmission line concentric array 1 comprises at least two array units 11. The array elements 11 are arranged on both sides of the feed conductor 4. Each of the array elements 11 on each side of the feed conductor is connected by the coupling loop 3. The feed conductor 4 comprises at least two feed strips 4a, 4b, the feed strips 4a, 4b being interconnected at respective ends, at least one feed point 41 being provided on each of the feed strips 4a, 4 b. The central common ground point 2 is provided at the junction of the two feeding conduction bands 4a, 4 b. One end of each of the array elements 11 is connected to the central common ground point 2. The feeding conduction bands 4a, 4b and the array unit 11 are distributed radially in a circular ring shape by taking a central common grounding point 2 as a circle center. The ground conduction band 5 comprises at least two ground guide blocks 51, each ground guide block 51 is arranged at the other end of the array unit 11 and the feed conductor 4 far away from the central common ground point 2, and a gap 6 is formed between each ground guide block 51 and the end face of the other end of the array unit 11 or the feed conduction band 4. The edge of the ground guide block 51 is grounded.
The length of the array unit 11 is odd multiple of quarter waveguide wavelength, the width range is 1 mm-2 mm, the number is 6-50, the width of the coupling ring 3 is 1mm, and the actual size and the number can be adjusted according to actual conditions. Referring to fig. 1, in the present embodiment, the number of the array units 11 is 14, 7 array units 11 are respectively uniformly distributed on two sides of the feed conductor 4, and the 7 array units 11 are connected by using one coupling ring 3.
The feed conductor 4 comprises at least two feed strips 4a, 4b in this embodiment. At least one feeding point 41 is provided on the feeding conduction bands 4a, 4 b. The central common grounding point 2 is arranged in the center, and the array unit 11 and one end of the feed conduction band 4 are connected with the central common grounding point 2 and are radially distributed in a ring shape by taking the central common grounding point 2 as the center of a circle. The width of the feeding conduction bands 4a, 4b is greater than or equal to the width of the array element 11. At least one feed point 41 is provided on each of the feeding strips 4a, 4b for feeding microwave power. In this embodiment, the feeding point 41 feeds the microwave power through the SMA coaxial connector 9, and the feeding point 41 and the coupling ring 3 are located on the same circumference.
The concentric array of microstrip transmission lines 1, the coupling loops 3, the feeding conduction bands 4a, 4b and the grounding conduction band 5 are made of gold or copper, and have high conductivity.
Referring to fig. 2, the ground strap 5 includes at least two ground guide blocks 51, each ground guide block 51 is disposed opposite to the other end of the array element 11 and the feeding straps 4a, 4b, and a slot 6 is formed between each array element 11 and the feeding straps 4a, 4b and the ground guide blocks 51 through an equivalent open circuit of a three-quarter waveguide wavelength microstrip transmission line. The ground guide 51 is provided with a ground port 52 at a distance of 1mm from the edge, and the ground port 52 is connected to the ground. The width of the slot 6 is 0.1mm and the resonance frequency is 2.45 GHz.
In the preferred embodiment of the present invention, a substrate 7 is disposed at the bottom of the concentric array 1 of microstrip transmission lines, the coupling ring 3, the feeding conduction bands 4a, 4b and the grounding conduction band 5. As an example, fig. 3 shows only the substrate 7 on which the feeding strips 4a, 4b are provided. The substrate 7 is made of sapphire, high-resistance silicon, porous silicon, ruby or high-frequency ceramics (e.g., alumina ceramics), has the advantages of high temperature resistance, corrosion resistance, low loss and the like, and has a relative dielectric constant of 9.8 and a thickness of 0.63 mm. A ground plate 8 is provided at the bottom of the substrate 7, the ground plate 8 being connected to the ground lead 51 and the central common ground point 2 and to the outer conductor of the SMA coaxial connector 9.
In operation, microwave power is fed into the feeding conduction bands 4a and 4b of the planar microwave microplasma circular array source from the feeding point 41 through the SMA coaxial connector 9, the feeding conduction bands 4a and 4b and one end of each array unit 11 are connected with the central common grounding point 2, and the central common grounding point 2 is connected with the grounding plate 8. The other ends of the feeding strips 4a, 4b and each array element 11 are equivalently open circuited via a three-quarter waveguiding wavelength microstrip transmission line, and the ground port 52 in the ground strip 5 is adjusted to maximize the voltage of the slot 6 (equivalently the voltage anti-node). The input power is better coupled to each array unit 11 through the coupling ring 3, so that a micro plasma array with a larger size is excited, and low cost, low input power, uniform excitation of a micro plasma circular array and the like are realized.
According to the transmission line theory, the equivalent circuit of the microwave microplasma linear array source unit based on the quarter-wave microstrip resonator is shown in fig. 4(a), fig. 4(b) shows the voltage amplitude variation curve on the quarter-wave microstrip transmission line, the abscissa unit is millimeter (mm), the ordinate unit is volt (V), wherein x is 0 (U)max) Indicating a gap, U-0 indicates a common ground point.
The input impedance Z can be made by selecting the feed point positioninIs 50 omega, so that microwave power can be directly fed into the microstrip line without an impedance matching network. Input impedance ZinEquivalent to the impedance value Z of the left and right microstrip lines viewed from the feed end1And Z2The expression of (c) is expressed as the following formula:
wherein Z isinRepresenting the input impedance, Z0Representing the characteristic impedance, Z, of the microstrip linepRepresenting the impedance of the microplasma at the discharge gap, k being the number of propagating waves, l1And l2Respectively the length of the microstrip lines at the left and right parts of the feed end, Z1Representing the impedance value, Z, of the left part of the microstrip line as seen from the feed end2Showing the impedance value of the right portion of the microstrip line as viewed from the feed end.
The resonant frequency of the planar low-power microwave microplasma circular array source is related to the electromagnetic field distribution at the gap, the position and the size of the coupling strip, the width of the gap, the size of the grounding conduction band and the like. When the quarter-wave microstrip resonator works at 2.45GHz, one end of the microstrip line at the gap is at the maximum voltage value, so that a high electric field is formed at the gap, and gas at the gap is ionized to form micro plasma. Compared with the prior art, the planar low-power microwave micro-plasma circular array source has the advantages of low cost, low input power, uniform excitation of the micro-plasma circular array and the like.
The protection of the present invention is not limited to the above embodiments. Variations and advantages that may occur to those skilled in the art may be incorporated into the invention without departing from the spirit and scope of the inventive concept, and the scope of the appended claims is intended to be protected.
Claims (10)
1. A planar low-power microwave microplasma circular ring array source, comprising: the antenna comprises a microstrip transmission line concentric array (1), a central common grounding point (2), a coupling ring (3), a feed conductor (4) and a grounding conduction band (5); wherein,
the microstrip transmission line concentric array (1) comprises at least two array units (11); the array unit (11) is arranged on two sides of the feed conductor (4); each of the array elements (11) on each side of the feed conductor is connected by the coupling loop (3);
-the feeding conductor (4) comprises at least two feeding strips (4a, 4b), the feeding strips (4a, 4b) being interconnected at respective one ends, at least one feeding point (41) being provided on each of the feeding strips (4a, 4 b);
the central common ground point (2) is arranged at the connection of the two feeding conduction bands (4a, 4 b);
one end of each array unit (11) is connected with the central common grounding point (2);
the feed conduction bands (4a, 4b) and the array unit (11) are distributed in a circular ring shape in a radial manner by taking a central common grounding point (2) as a circle center;
the grounding guide strip (5) comprises at least two grounding guide blocks (51), each grounding guide block (51) is arranged at the other end of the array unit (11) and the feeding guide strips (4a, 4b) far away from the central common grounding point (2), and a gap (6) is formed between each grounding guide block (51) and the end face of the other end of the array unit (11) or the feeding guide strips (4a, 4 b); the edge of the grounding guide block (51) is grounded.
2. The planar small-power microwave microplasma toroidal array source of claim 1, characterized in that each of said array elements (11) has a length of odd multiple of a quarter of the waveguide wavelength, a width ranging from 1mm to 2mm, and a number of 6 to 50.
3. The planar small-power microwave microplasma toroidal array source according to claim 1, characterized in that the width of said slit (6) ranges from 10 μm to 200 μm, and the resonance frequency is 2.45 GHz.
4. The planar small-power microwave microplasma toroidal array source according to claim 1, characterized in that the width of said coupling ring (3) ranges from 1mm to 10 mm.
5. The planar low-power microwave microplasma toroidal array source according to claim 1, characterized in that the width of said feeding conduction bands (4a, 4b) is greater than or equal to the width of said array elements (11).
6. The planar small-power microwave microplasma toroidal array source of claim 1, wherein said grounded conductive block (51) has a length greater than the width of said array unit (11), ranging from 2mm to 4mm in length and from 4mm to 20mm in width.
7. The planar small power microwave microplasma torus array source of claim 1, characterized in that the microstrip transmission line concentric array (1), the coupling ring (3), the feeding conduction bands (4a, 4b) and the grounding conduction band (5) are made of gold or copper.
8. The planar small power microwave microplasma torus array source of claim 1, further comprising a substrate (7) disposed at the bottom of said concentric array of microstrip transmission lines (1), said coupling ring (3), said feed conduction bands (4a, 4b), and said ground conduction band (5).
9. The planar low-power microwave microplasma toroidal array source according to claim 8, characterized in that said substrate (7) is made of sapphire, high-resistive silicon, porous silicon, ruby or high-frequency ceramic.
10. The planar low power microwave microplasma toroidal array source according to claim 8, characterized in that the bottom of the substrate (7) is provided with a ground plate (8), said ground plate (8) being connected to the central common ground point (2) and the ground conduction band (5).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107548222A (en) * | 2017-07-25 | 2018-01-05 | 华东师范大学 | A kind of wireless activation miniaturization microwave micro-plasma array source based on Meta Materials |
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| CN101184359A (en) * | 2007-12-07 | 2008-05-21 | 华东师范大学 | Low power microwave plasma source |
| CN102117972A (en) * | 2010-12-22 | 2011-07-06 | 西安交通大学 | Frequency-scanning antenna array based on CRLH-TL |
| US20120045863A1 (en) * | 2009-04-28 | 2012-02-23 | Hopwood Jeffrey A | Microplasma generator and methods therefor |
| SG170554A1 (en) * | 2010-02-04 | 2012-02-28 | Ciersiang Chua | Planar helix slow-wave structure with straight-edge connections |
| US20140159571A1 (en) * | 2011-07-28 | 2014-06-12 | Trustees Of Tufts College | Microplasma Generating Array |
| CN204733453U (en) * | 2015-04-27 | 2015-10-28 | 华东师范大学 | A kind of plane low power microwave microplasma circular array source |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101184359A (en) * | 2007-12-07 | 2008-05-21 | 华东师范大学 | Low power microwave plasma source |
| US20120045863A1 (en) * | 2009-04-28 | 2012-02-23 | Hopwood Jeffrey A | Microplasma generator and methods therefor |
| SG170554A1 (en) * | 2010-02-04 | 2012-02-28 | Ciersiang Chua | Planar helix slow-wave structure with straight-edge connections |
| CN102117972A (en) * | 2010-12-22 | 2011-07-06 | 西安交通大学 | Frequency-scanning antenna array based on CRLH-TL |
| US20140159571A1 (en) * | 2011-07-28 | 2014-06-12 | Trustees Of Tufts College | Microplasma Generating Array |
| CN204733453U (en) * | 2015-04-27 | 2015-10-28 | 华东师范大学 | A kind of plane low power microwave microplasma circular array source |
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| CN107548222A (en) * | 2017-07-25 | 2018-01-05 | 华东师范大学 | A kind of wireless activation miniaturization microwave micro-plasma array source based on Meta Materials |
| CN107548222B (en) * | 2017-07-25 | 2019-04-26 | 华东师范大学 | A kind of wireless activation miniaturization microwave micro-plasma array source based on Meta Materials |
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