CN101179067A - Light source assembly and luminous chip packaging body - Google Patents
Light source assembly and luminous chip packaging body Download PDFInfo
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- CN101179067A CN101179067A CN 200610146451 CN200610146451A CN101179067A CN 101179067 A CN101179067 A CN 101179067A CN 200610146451 CN200610146451 CN 200610146451 CN 200610146451 A CN200610146451 A CN 200610146451A CN 101179067 A CN101179067 A CN 101179067A
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- soft carrier
- patterned metal
- metal layer
- heat radiating
- layer
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- 238000004806 packaging method and process Methods 0.000 title 1
- 238000004020 luminiscence type Methods 0.000 claims abstract description 74
- 238000005538 encapsulation Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 239000010409 thin film Substances 0.000 claims description 29
- 230000005855 radiation Effects 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000904 thermoluminescence Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
The invention discloses a light source component, which comprises a heat dissipation board, a film circuit layer and a plurality of luminescence chip encapsulation bodies. The film circuit layer is arranged on the heat dissipation board; the luminescence chip encapsulation bodies are positioned on and electrically connected with the film circuit layer. In addition, each of the luminescence chip encapsulation body comprises a soft loader, at least one luminescence chip and a primer; wherein, the soft loader has a first surface and a second surface, and the luminescence chip is arranged on the first surface of the soft loader. The luminescence chip is provided with a plurality of raised blocks and the luminescence chip is electrically connected with the soft loader through the raised blocks. The primer is arranged between the soft loader and the luminescence chip to wrap the raised blocks. Therefore, the light source component has longer service life.
Description
Technical field
The present invention is relevant for a kind of light source assembly and chip packing-body, and is particularly to a kind of light source assembly and luminous chip encapsulation body.
Background technology
In recent years, utilize the compound semiconductor of nitrogen gallium, (light emitting diode, LED) element gets most of the attention as the light-emitting diode of gallium nitride (GaN), aluminium gallium nitride alloy (AlGaN), InGaN (InGaN) etc.III-nitride is the material of a broadband energy gap, and its emission wavelength can be contained to ruddiness from ultraviolet light always, therefore can say so and almost contain the wave band of whole visible light.In addition, compared to conventional bulb, light-emitting diode has absolute advantage, for example volume is little, life-span length, low-voltage/current drives, be difficult for breaking, do not contain mercury (not having pollution problem) and the good characteristics such as (power savings) of luminous efficiency, so the application of light-emitting diode on industry is very extensive.
Because the luminescence phenomenon of light-emitting diode does not belong to thermoluminescence or Discharge illuminating, but it is luminous to belong to cold property, thus light-emitting diode assembly under the good situation of heat radiation, the life-span was more than 100,000 hours, and need not warm up the lamp time (idling time).In addition, light-emitting diode assembly has reaction speed and (is about 10 soon
-9Second), volume is little, power-saving, pollute low (not containing mercury), high-reliability, be fit to advantages such as volume production, so the field of its application is very extensive.Therefore, light-emitting diode is regarded as most important light source of 21 century.
Yet, because the light-emitting diode running time can produce a large amount of heat energy, and the brightness of light-emitting diode and life-span all can be subjected to Temperature Influence, therefore when the power of light-emitting diode increased, the demand of heat radiation is just increase gradually also.Prior art is to use complicated cooling system, yet complicated cooling system also can cause problems such as the excessive and cost increase of volume.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of light source assembly, to increase useful life.
In addition, another object of the present invention provides a kind of luminous chip encapsulation body, to improve radiating efficiency.
For reaching above-mentioned or other purposes, the present invention proposes a kind of light source assembly, and it comprises a heating panel, a wiring thin film layer and a plurality of luminous chip encapsulation body, and wherein the wiring thin film layer is disposed on the heating panel.These luminous chip encapsulation bodies are disposed on the wiring thin film layer, and electrically connect with the wiring thin film layer.In addition, each luminous chip encapsulation body comprises a soft carrier, at least one luminescence chip and a primer, and wherein soft carrier has a first surface and a second surface, and luminescence chip is disposed on the first surface of soft carrier.Luminescence chip has a plurality of projections, and luminescence chip electrically connects by these projections and soft carrier.Primer is disposed between soft carrier and the luminescence chip, to coat projection.
In an embodiment of the present invention, each luminous chip encapsulation body also comprises a reflector, and it is disposed on the soft carrier, and the reflector has an opening, and it exposes luminescence chip.
In an embodiment of the present invention, each luminous chip encapsulation body also comprises a reflector, and it is disposed on the soft carrier, and the partial reflection cover is positioned at the top of luminescence chip.
In an embodiment of the present invention, each soft carrier has one first patterned metal layer, one second patterned metal layer and a plurality of conductive through hole, wherein first patterned metal layer and second patterned metal layer lay respectively on first surface and the second surface, and first patterned metal layer and second patterned metal layer electrically connect by these conductive through holes.The projection and first patterned metal layer electrically connect, and second patterned metal layer and the electric connection of wiring thin film layer.
In an embodiment of the present invention, each soft carrier also has one first heat radiating metallic layer, one second heat radiating metallic layer and a plurality of heat radiation perforation, wherein first heat radiating metallic layer and second heat radiating metallic layer lay respectively on first surface and the second surface, and first heat radiating metallic layer is connected by the heat radiation perforation with second heat radiating metallic layer.
In an embodiment of the present invention, the wiring thin film layer comprises a line layer and a welding cover layer that is disposed on the line layer.
In an embodiment of the present invention, light source assembly also comprises an insulation glue-line, and it is disposed between wiring thin film layer and the heating panel.
In an embodiment of the present invention, these luminescence chips comprise light-emitting diode or Organic Light Emitting Diode.
For reaching above-mentioned or other purposes, the present invention proposes a kind of light source assembly, it comprises a soft carrier, a plurality of luminescence chip and a primer, and wherein soft carrier has a first surface and a second surface, and these luminescence chips are disposed on the first surface of soft carrier.Each luminescence chip has a plurality of projections, and these luminescence chips electrically connect by projection and soft carrier.Primer is disposed between soft carrier and these luminescence chips, to coat projection.
In an embodiment of the present invention, light source assembly also comprises a reflector, and it is disposed on the soft carrier, and the reflector has a plurality of openings, and it exposes these luminescence chips respectively.
In an embodiment of the present invention, light source assembly also comprises a plurality of reflectors, and it is disposed on the soft carrier, and the part of each reflector is positioned at the top of corresponding luminescence chip.
In an embodiment of the present invention, soft carrier has one first patterned metal layer, one second patterned metal layer and a plurality of conductive through hole, wherein first patterned metal layer and second patterned metal layer lay respectively on first surface and the second surface, and first patterned metal layer and second patterned metal layer electrically connect by these conductive through holes, and these projections and first patterned metal layer electrically connect.
In an embodiment of the present invention, each soft carrier also has one first heat radiating metallic layer, one second heat radiating metallic layer and a plurality of heat radiation perforation, wherein first heat radiating metallic layer and second heat radiating metallic layer lay respectively on first surface and the second surface, and first heat radiating metallic layer is connected by the heat radiation perforation with second heat radiating metallic layer.
In an embodiment of the present invention, second heat radiating metallic layer of each soft carrier has a plurality of grooves.
For reaching above-mentioned or other purposes, the present invention proposes a kind of luminous chip encapsulation body, and it comprises a soft carrier, at least one luminescence chip and a primer.Soft carrier has one first heat radiating metallic layer, one second heat radiating metallic layer and a plurality of heat radiation perforation, and wherein first heat radiating metallic layer and second heat radiating metallic layer lay respectively on the second surface of first surface of soft carrier and soft carrier.First heat radiating metallic layer is connected by the heat radiation perforation with second heat radiating metallic layer, and second heat radiating metallic layer has a plurality of grooves.Luminescence chip has a plurality of projections, and luminescence chip electrically connects by these projections and soft carrier.Primer is disposed between soft carrier and the luminescence chip, to coat projection.
In an embodiment of the present invention, luminous chip encapsulation body also comprises a reflector, and it is disposed on the soft carrier, and the reflector has at least one opening, and it exposes luminescence chip.
In an embodiment of the present invention, luminous chip encapsulation body also comprises a reflector, and it is disposed on the soft carrier, and the part of reflector is positioned at the top of luminescence chip.
In an embodiment of the present invention, soft carrier also has one first patterned metal layer, one second patterned metal layer and a plurality of conductive through hole, wherein first patterned metal layer and second patterned metal layer lay respectively on first surface and the second surface, and first patterned metal layer and second patterned metal layer electrically connect by conductive through hole, and the projection and first patterned metal layer electrically connect.
Based on above-mentioned, because the present invention engages the wiring thin film layer with heating panel, with the carrying luminescence chip, therefore light source assembly of the present invention has preferable radiating efficiency and long useful life.In addition, the present invention adopts soft carrier, and therefore light source assembly of the present invention can bend, to improve ease of use.Moreover the present invention forms groove at the heat radiating metallic layer of soft carrier, to improve radiating efficiency.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Fig. 1 is the profile according to a kind of light source assembly of first embodiment of the invention.
Fig. 2 is the profile according to a kind of light source assembly of second embodiment of the invention.
Fig. 3 is the profile according to a kind of light source assembly of third embodiment of the invention.
Fig. 4 is the profile according to a kind of light source assembly of fourth embodiment of the invention.
Embodiment
[first embodiment]
Fig. 1 is the profile according to a kind of light source assembly of first embodiment of the invention.Please refer to Fig. 1, the light source assembly 100 of present embodiment comprises a heating panel 110, a wiring thin film layer 120 and a plurality of luminous chip encapsulation bodies 130, and wherein wiring thin film layer 120 is disposed on the heating panel 110.In the present embodiment, wiring thin film layer 120 comprises a line layer 122 and a welding cover layer 124 that is disposed on the line layer 122.In addition, the light source assembly 100 of present embodiment also comprises an insulation glue-line 140, and it is disposed between wiring thin film layer 120 and the heating panel 110.Insulation glue-line 140 also can have thermal conduction characteristic, in order to conducting the heat that luminous chip encapsulation body 130 is produced.Yet present embodiment does not limit wiring thin film layer 120 and has the individual layer circuit, and wiring thin film layer 120 also can be to have multilayer line.Moreover when the bottom of wiring thin film layer 120 was dielectric layer, wiring thin film layer 120 also can directly be disposed on the heating panel 110.
These luminous chip encapsulation bodies 130 are disposed on the wiring thin film layer 120, and electrically connect with wiring thin film layer 120.More specifically, in the present embodiment, these luminous chip encapsulation bodies 130 electrically connect via a scolder 150, anisotropic conductive (ACP) or anisotropy conducting film (ACF) line layer 122 with wiring thin film layer 120.
Please continue with reference to figure 1, each luminous chip encapsulation body 130 comprises a soft carrier 132, at least one luminescence chip 134 and a primer 136.In the present embodiment, soft carrier 132 for example be flexible printed wiring board (flexible printed circuit board, FPC).In addition, soft carrier 132 has a first surface 132a and a second surface 132b, and luminescence chip 134 is disposed on the first surface 132a of soft carrier 132.Luminescence chip 134 has a plurality of projection 134a, and luminescence chip 134 electrically connects by these projections 134a and soft carrier 132.Primer 136 is disposed between soft carrier 132 and the luminescence chip 134, to coat projection 134a.
More specifically, soft carrier 132 has one first patterned metal layer 1322a, one second patterned metal layer 1324a and a plurality of conductive through hole 1326a, wherein the first patterned metal layer 1322a and the second patterned metal layer 1324a lay respectively on first surface 132a and the second surface 132b, and the first patterned metal layer 1322a and the second patterned metal layer 1324a electrically connect by these conductive through holes 1326a.In addition, the projection 134a and the first patterned metal layer 1322a electrically connect, and the second patterned metal layer 1324a and 120 electric connection of wiring thin film layer.In the present embodiment, soft carrier 132 also can have a welding cover layer 1328, and it is disposed on the first patterned metal layer 1322a.In addition, luminescence chip 134 comprises light-emitting diode or Organic Light Emitting Diode.Only have single luminescence chip 134 though it should be noted that the luminous chip encapsulation body 130 of present embodiment, yet in another embodiment, luminous chip encapsulation body 130 also can comprise a plurality of luminescence chips 134.
In the present embodiment, for the light that makes luminescence chip 134 be sent can be more concentrated, luminous chip encapsulation body 130 also comprises a reflector 1382, and it is disposed on the soft carrier 132, and the reflector has an opening 1382a, and it exposes luminescence chip 134.In addition, the width of opening 1382a increases toward the direction away from soft carrier 132 gradually from soft carrier 132.Moreover, in order to increase the reflectivity of opening 1382a, also can on the inwall of opening 1382a, be coated with reflecting material.
In the present embodiment, in order to improve radiating efficiency, each soft carrier 132 also has one first heat radiating metallic layer 1322b, one second heat radiating metallic layer 1324b and a plurality of heat radiation perforation 1326b, wherein the first heat radiating metallic layer 1322b and the second heat radiating metallic layer 1324b lay respectively at 132b on first surface 132a and the second surface, and the first heat radiating metallic layer 1322b is connected by heat radiation perforation 1326b with the second heat radiating metallic layer 1324b.
Because luminous chip encapsulation body 130 is disposed on the wiring thin film layer 120, and wiring thin film layer 120 engages with heating panel 110, the heat that is produced when therefore luminous chip encapsulation body 130 operates can conduct to the external world via heating panel 110, to improve the useful life and the luminous efficiency of luminous chip encapsulation body 130.In addition, if luminous chip encapsulation body 130 is arranged in line, then this light source assembly 100 can be used as line source.If luminous chip encapsulation body 130 is arranged in array, then this light source assembly 100 can be used as area source.
[second embodiment]
Fig. 2 is the profile according to a kind of light source assembly of second embodiment of the invention.Please refer to Fig. 2, present embodiment is similar to first embodiment, and its difference is: in the light source assembly 200 of present embodiment, luminous chip encapsulation body 130 also comprises a reflector 1384, it is disposed on the soft carrier 132, and partial reflection cover 1384 is positioned at the top of luminescence chip 134.Therefore, reflector 1384 can change the light direction of light source assembly 200.In other words, light source assembly 200 is the side bright dipping.In addition, in order to increase the reflectivity of reflector 1384, also can on the inwall of reflector 1384, be coated with reflecting material.Perhaps, the material of reflector 1384 is a metal.
[the 3rd embodiment]
Fig. 3 is the profile according to a kind of light source assembly of third embodiment of the invention.Please refer to Fig. 3, the light source assembly 300 of present embodiment comprises a soft carrier 310, a plurality of luminescence chip 320 and a primer 330.Wherein, soft carrier 310 for example is flexible printed wiring board (FPC).In addition, soft carrier 310 has a first surface 310a and a second surface 310b, and these luminescence chips 320 are disposed on the first surface 310a of soft carrier 310.Each luminescence chip 320 has a plurality of projection 320a, and these luminescence chips 320 electrically connect by projection 320a and soft carrier 310.In addition, luminescence chip 320 comprises light-emitting diode or Organic Light Emitting Diode.Moreover primer 330 is disposed between soft carrier 310 and these luminescence chips 320, to coat projection 320a.
More specifically, soft carrier 310 has one first patterned metal layer 312a, one second patterned metal layer 314a and a plurality of conductive through hole 316a, wherein the first patterned metal layer 312a and the second patterned metal layer 314a lay respectively on first surface 310a and the second surface 310b, and the first patterned metal layer 312a and the second patterned metal layer 314a electrically connect by these conductive through holes 316a.In addition, the projection 320a and the first patterned metal layer 312a electrically connect.In the present embodiment, soft carrier 310 also can have a welding cover layer 318, and it is disposed on the first patterned metal layer 312a.
In the present embodiment, for the light that makes luminescence chip 320 be sent can be more concentrated, light source assembly 300 also comprises a reflector 340, and it is disposed on the soft carrier 310, and the reflector has a plurality of opening 340a, and it exposes each luminescence chip 134.In addition, the width of each opening 340a increases toward the direction away from soft carrier 310 gradually from soft carrier 310.Moreover, in order to increase the reflectivity of opening 340a, also can on the inwall of opening 340a, be coated with reflecting material.
In order to improve the radiating efficiency of light source assembly 300, soft carrier 310 also has one first heat radiating metallic layer 312b, one second heat radiating metallic layer 314b and a plurality of heat radiation perforation 316b, wherein the first heat radiating metallic layer 312b and the second heat radiating metallic layer 314b lay respectively at 310b on first surface 310a and the second surface, and the first heat radiating metallic layer 312b is connected by heat radiation perforation 316b with the second heat radiating metallic layer 314b.In addition, the second heat radiating metallic layer 314b also can have a plurality of groove 3142a.More specifically, groove 3142a is formed by etch process, to increase area of dissipation.
In addition, if luminous chip encapsulation body 320 is arranged in line, then this light source assembly 300 can be used as line source.If luminous chip encapsulation body 320 is arranged in array, then this light source assembly 300 can be used as area source.
[the 4th embodiment]
Fig. 4 is the profile according to a kind of light source assembly of fourth embodiment of the invention.Please refer to Fig. 4, present embodiment is similar to the 3rd embodiment, and its difference is: the light source assembly 400 of present embodiment also comprises a reflector 350, and it is disposed on the soft carrier 310, and partial reflection cover 350 is positioned at the top of luminescence chip 320.Therefore, reflector 350 can change the light direction of light source assembly 400.In other words, light source assembly 400 is the side bright dipping.In addition, in order to increase the reflectivity of reflector 350, also can on the inwall of reflector 350, be coated with reflecting material.Perhaps, the material of reflector 350 is a metal.In addition, the light source assembly 400 of present embodiment does not limit yet and need have radiator structure 3142.
In sum, light source assembly of the present invention has following advantage at least:
One, the present invention adopt heating panel and the wiring thin film layer of arranging in pairs or groups as carrier, so the heat energy that the luminescence chip running time is produced reaches the external world by extremely short path, to improve the useful life and the luminous efficiency of luminescence chip.
Two, the present invention adopts soft carrier, and therefore light source assembly of the present invention can bend, to improve ease of use.
Three, owing to luminescence chip electrically connects with chip bonding mode and soft carrier, so the light that luminescence chip sent more is not subject to the interference of other members.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those of ordinary skills, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when with being as the criterion that claim was defined.
Claims (18)
1. light source assembly comprises:
One heating panel;
One wiring thin film layer is disposed on this heating panel;
A plurality of luminous chip encapsulation bodies are disposed on this wiring thin film layer, and electrically connect with this wiring thin film layer, and respectively this luminous chip encapsulation body comprises:
One soft carrier has a first surface and a second surface;
At least one luminescence chip be disposed on this first surface of this soft carrier, and this luminescence chip has a plurality of projections, and this luminescence chip electrically connects by the soft carrier of those projections and this; And
One primer is disposed between this soft carrier and this luminescence chip, to coat those projections.
2. light source assembly as claimed in claim 1 is characterized in that respectively this luminous chip encapsulation body also comprises a reflector, be disposed on this soft carrier, and this reflector has an opening, exposes this luminescence chip.
3. light source assembly as claimed in claim 1 is characterized in that respectively this luminous chip encapsulation body also comprises a reflector, be disposed on this soft carrier, and this reflector of part is positioned at the top of this luminescence chip.
4. light source assembly as claimed in claim 1, it is characterized in that, respectively this soft carrier has one first patterned metal layer, one second patterned metal layer and a plurality of conductive through hole, wherein this first patterned metal layer and this second patterned metal layer lay respectively on this first surface and this second surface, and this first patterned metal layer and this second patterned metal layer electrically connect by those conductive through holes, those projections and this first patterned metal layer electrically connect, and this second patterned metal layer and the electric connection of this wiring thin film layer.
5. light source assembly as claimed in claim 1, it is characterized in that, respectively this soft carrier also has one first heat radiating metallic layer, one second heat radiating metallic layer and a plurality of heat radiation perforation, wherein this first heat radiating metallic layer and this second heat radiating metallic layer lay respectively on this first surface and this second surface, and this first heat radiating metallic layer is connected by those heat radiation perforations with this second heat radiating metallic layer.
6. light source assembly as claimed in claim 1 is characterized in that, this wiring thin film layer comprises a line layer and a welding cover layer that is disposed on this line layer.
7. light source assembly as claimed in claim 1 is characterized in that, also comprises an insulation glue-line, is disposed between this wiring thin film layer and this heating panel.
8. light source assembly as claimed in claim 1 is characterized in that those luminescence chips comprise light-emitting diode or Organic Light Emitting Diode.
9. light source assembly comprises:
One soft carrier has a first surface and a second surface;
A plurality of luminescence chips be disposed on this first surface of this soft carrier, and respectively this luminescence chip have a plurality of projections, and those luminescence chips electrically connect by the soft carrier of those projections and this; And
One primer is disposed between this soft carrier and those luminescence chips, to coat those projections.
10. light source assembly as claimed in claim 9 is characterized in that, also comprises a reflector, be disposed on this soft carrier, and this reflector has a plurality of openings, exposes those luminescence chips respectively.
11. light source assembly as claimed in claim 9 is characterized in that, also comprises a plurality of reflectors, be disposed on this soft carrier, and respectively the part of this reflector is positioned at the top of corresponding this luminescence chip.
12. light source assembly as claimed in claim 9, it is characterized in that, this soft carrier has one first patterned metal layer, one second patterned metal layer and a plurality of conductive through hole, wherein this first patterned metal layer and this second patterned metal layer lay respectively on this first surface and this second surface, and this first patterned metal layer and this second patterned metal layer electrically connect by those conductive through holes, and those projections and this first patterned metal layer electrically connect.
13. light source assembly as claimed in claim 9, it is characterized in that, respectively this soft carrier also has one first heat radiating metallic layer, one second heat radiating metallic layer and a plurality of heat radiation perforation, wherein this first heat radiating metallic layer and this second heat radiating metallic layer lay respectively on this first surface and this second surface, and this first heat radiating metallic layer is connected by those heat radiation perforations with this second heat radiating metallic layer.
14. light source assembly as claimed in claim 13 is characterized in that, respectively this of this soft carrier second heat radiating metallic layer has a plurality of grooves.
15. a luminous chip encapsulation body comprises:
One soft carrier, have one first heat radiating metallic layer, one second heat radiating metallic layer and a plurality of heat radiation perforation, wherein on the second surface of this first heat radiating metallic layer and this second heat radiating metallic layer first surface that lays respectively at this soft carrier and this soft carrier, and this first heat radiating metallic layer is connected by those heat radiation perforations with this second heat radiating metallic layer, and this second heat radiating metallic layer has a plurality of grooves;
At least one luminescence chip be disposed on this first surface of this soft carrier, and this luminescence chip has a plurality of projections, and this luminescence chip electrically connects by the soft carrier of those projections and this; And
One primer is disposed between this soft carrier and this luminescence chip, to coat those projections.
16. luminous chip encapsulation body as claimed in claim 15 is characterized in that, also comprises a reflector, be disposed on this soft carrier, and this reflector has at least one opening, exposes this luminescence chip.
17. luminous chip encapsulation body as claimed in claim 15 is characterized in that, also comprises a reflector, be disposed on this soft carrier, and the part of this reflector is positioned at the top of this luminescence chip.
18. luminous chip encapsulation body as claimed in claim 15, it is characterized in that, this soft carrier also has one first patterned metal layer, one second patterned metal layer and a plurality of conductive through hole, wherein this first patterned metal layer and this second patterned metal layer lay respectively on this first surface and this second surface, and this first patterned metal layer and this second patterned metal layer electrically connect by those conductive through holes, and those projections and this first patterned metal layer electrically connect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610146451 CN100511669C (en) | 2006-11-06 | 2006-11-06 | Light source assembly and luminous chip packaging body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 200610146451 CN100511669C (en) | 2006-11-06 | 2006-11-06 | Light source assembly and luminous chip packaging body |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456861A (en) * | 2012-05-31 | 2013-12-18 | 展晶科技(深圳)有限公司 | Manufacturing method of light emitting diode |
| CN104124237A (en) * | 2013-04-26 | 2014-10-29 | 光明半导体（天津）有限公司 | Light-emitting diode packaging piece and manufacturing method thereof |
| CN106105412A (en) * | 2014-03-20 | 2016-11-09 | 高通股份有限公司 | Multi-layer heat radiator for electronic equipment |
| CN112180128A (en) * | 2020-09-29 | 2021-01-05 | 西安微电子技术研究所 | Interconnection substrate with elastic conductive micro-bumps and KGD socket based on interconnection substrate |
-
2006
- 2006-11-06 CN CN 200610146451 patent/CN100511669C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103456861A (en) * | 2012-05-31 | 2013-12-18 | 展晶科技(深圳)有限公司 | Manufacturing method of light emitting diode |
| CN104124237A (en) * | 2013-04-26 | 2014-10-29 | 光明半导体（天津）有限公司 | Light-emitting diode packaging piece and manufacturing method thereof |
| CN106105412A (en) * | 2014-03-20 | 2016-11-09 | 高通股份有限公司 | Multi-layer heat radiator for electronic equipment |
| CN106105412B (en) * | 2014-03-20 | 2020-04-21 | 高通股份有限公司 | Multilayer heat sink for electronic device |
| CN112180128A (en) * | 2020-09-29 | 2021-01-05 | 西安微电子技术研究所 | Interconnection substrate with elastic conductive micro-bumps and KGD socket based on interconnection substrate |
| CN112180128B (en) * | 2020-09-29 | 2023-08-01 | 珠海天成先进半导体科技有限公司 | Interconnection substrate with elastic conductive micro-bumps and KGD socket based on interconnection substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100511669C (en) | 2009-07-08 |
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