CN103456861A - Manufacturing method of light emitting diode - Google Patents
Manufacturing method of light emitting diode Download PDFInfo
- Publication number
- CN103456861A CN103456861A CN2012101762200A CN201210176220A CN103456861A CN 103456861 A CN103456861 A CN 103456861A CN 2012101762200 A CN2012101762200 A CN 2012101762200A CN 201210176220 A CN201210176220 A CN 201210176220A CN 103456861 A CN103456861 A CN 103456861A
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- light
- emitting diode
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- manufacture method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Disclosed is a manufacturing method of a light emitting diode. The method includes providing a substrate plate provided with an electrode; providing a lighting chip and allowing the same to connect to the electrode electrically; providing a reflecting layer, a rolling cutter, a rotary shaft driving the rolling cutter to rotate and a control device controlling the displacement of the rolling cutter; allowing the control device to control the rolling cutter to move downwards and grind the reflecting layer till forming a groove in appropriate depth; meanwhile, allowing the corresponding side face of the rolling cutter to repeatedly grind the inner surface of the groove, and forming an accommodating hole in the reflecting layer; fixing the reflecting layer on the substrate plate, and allowing the lighting chip on the substrate plate to be accommodated in the corresponding accommodating hole.
Description
Technical field
The present invention relates to a kind of method for making semiconductor, relate in particular to a kind of manufacture method of light-emitting diode.
Background technology
Light-emitting diode (Light Emitting Diode, LED) be a kind ofly current conversion can be become to the semiconductor element of the light of particular range of wavelengths, rely on that its luminous efficiency is high, volume is little, the advantage such as lightweight, environmental protection, be widely applied in the middle of current every field.
The manufacture method of existing light-emitting diode generally includes provides a substrate, be arranged on the light-emitting diode chip for backlight unit on substrate and be fixed on substrate and light-emitting diode chip for backlight unit be around in a reflector.Traditional reflector is made by the mode of mould ejection formation usually, has an accepting hole, in order to described light-emitting diode chip for backlight unit is accommodated in it.The inner surface of described accepting hole is generally from the bottom be connected with substrate and is tilted to towards the top away from substrate, outward extending inclined-plane or facing directly of extending vertically upward, the light sent in order to reflect light-emitting diode chip for backlight unit.Yet so the inner surface emission angle of the accepting hole of design is less, causes the light extraction efficiency of light-emitting diode limited.And, the inner surface by the more difficult control accepting hole of mould injection molding method everywhere make precision, cause the reflecting effect of reflector to be difficult to prediction.
Summary of the invention
In view of this, be necessary to provide a kind of manufacture method simple and light-emitting diode that light extraction efficiency is higher of manufacturing.
A kind of manufacture method of light-emitting diode, it comprises the steps:
Substrate with electrode is provided;
Luminescence chip is provided, and it is electrically connected on described electrode;
The cremasteric reflex layer also provides hobboing cutter, drives the rotating shaft that described hobboing cutter rotates and the control device of controlling the hobboing cutter displacement, it is descending and grind described reflector until form the groove of appropriate depth that described control device is controlled hobboing cutter, simultaneously, the inner surface of groove is ground in the corresponding side of described hobboing cutter, thereby so repeatedly repeatedly on reflector, forms accepting hole;
Fixed reflector, on substrate, and is contained in corresponding accepting hole the luminescence chip on substrate.
The manufacture method of light-emitting diode provided by the invention, processing procedure is simple, easy operating, especially, when to form inwall be circular-arc accepting hole, precision is easy to control, and the light-emitting diode that adopts this method to make has higher light extraction efficiency.
The accompanying drawing explanation
Each step schematic diagram that Fig. 1 to Figure 11 is method for manufacturing light-emitting of the present invention.
The main element symbol description
| Light- |
1 |
| The |
11 |
| The |
13 |
| The |
15 |
| The second interval parts | 17 |
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20 |
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21 |
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23 |
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30 |
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31、32 |
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40 |
| Receiving |
41 |
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43 |
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50 |
| Accepting |
51 |
| Connecting |
53 |
| Encapsulated |
57 |
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59 |
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60 |
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61 |
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63 |
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101 |
| Lower surface | 103 |
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611 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
The manufacture method of light-emitting diode 1 of the present invention comprises the following steps:
Step 1: refer to Fig. 1, the substrate 10 with some the first electrodes 11 and second electrode 13 is provided.
The insulating board body that this substrate 10 is a lengthwise, made by insulating material such as pottery, silica.This substrate 10 has a upper surface 101 and a lower surface 103 relative with this upper surface 101, and these first electrodes 11 and the second electrode 13 are attached on the upper surface 101, lower surface 103 of this substrate 10 along the longitudinal separation of substrate 10 respectively.The two ends of each the first electrode 11 and each the second electrode 13 respectively with substrate 10 corresponding two sides parallel co-planar, and each first electrode 11 with each second electrode 13 over against setting, each second electrode 13 be positioned at each the first electrode 11 under.Form respectively one first interval parts 15 and one second interval parts 17 between two adjacent the first electrodes 11 and two adjacent the second electrodes 13, this first interval parts 15 and the second interval parts 17 are also over against setting, and the two width along substrate 10 longitudinal extensions equates.
Step 2: refer to Fig. 2, a side of substrate processing 10 and the second electrode 13, connect the first relative electrode 11 and the second electrode 13 conductions.
Concrete, process a lateral edges of the second electrode 13 and substrate 10 by modes such as machine drilling or etchings, offer some guide holes 20 that run through the second electrode 13 and substrate 10 along the thickness direction of this substrate 10 on a lateral edges of this substrate 10, these guide holes 20 are communicated with respectively two relative the first electrode 11 and the second electrodes 13.Each guide hole 20 comprises the depression 21 that is formed at substrate 10 1 lateral edges and the groove 23 at corresponding the second electrode 13 respective outer edges.Each depression opposite end of 21 runs through the upper surface 101 of substrate 10 and lower surface 103 and its side and is communicated with substrate 10 outsides.Each groove 23 runs through the thickness direction of the second electrode 13.Described groove 23 is communicated with corresponding depression 21 guide hole 20 that arranges and jointly form a cross section semicircular in shape.When light-emitting diode 1 mounts with corresponding parts (not shown), some scolders are cast in each guide hole 20, and fill up corresponding guide hole 20, in order to the first electrode 11 and the second electrode 13 are electrically connected to.
Be understood that, this guide hole 20 also can be opened in the relative both sides of the edge of this substrate 10 simultaneously.
Step 3: refer to Fig. 3, a luminescence chip 30 is provided, and this luminescence chip 30 and two adjacent the first electrodes 11 are electrically connected.
Concrete, this luminescence chip 30 is fixed on the first electrode 11, by two metal lead wires 31,32 and two, the first adjacent electrode 11 is electrically connected two electrodes of this luminescence chip 30 respectively.
Step 4: refer to Fig. 4, form a fluorescence coating 40 of a covering luminescence chip 30 on 2 first electrodes 11 that are electrically connected to luminescence chip 30.
Concrete, adopt mould molding or other modes to form a fluorescence coating 40 that covers luminescence chip 30 on two adjacent the first electrodes 11.Two adjacent mutual close two ends and substrate 10 upper surfaces 101 of fluorescence coating 40 enclose formation one receiving space 41 jointly.
Step 5: refer to Fig. 5 to Fig. 8, a reflector 50 is provided, and, by the mode of attrition process, form some accepting holes 51 on described reflector 50.
The plate body that this reflector 50 is a lengthwise, it is made by resin or plastic material.
Concrete, wherein Fig. 6 shows the cutaway view of the hobboing cutter 61 shown in Fig. 5 along the VI-VI line.One milling apparatus 60 is provided, and this milling apparatus 60 comprises that a hobboing cutter 61, drives the control device (not shown) of rotating shaft 63 and these hobboing cutter 61 displacements of control of these hobboing cutter 61 rotations.This hobboing cutter 61 is a round pie emery wheel, and its thickness reduces gradually from middle mind-set periphery direction.The relative two sides 611 of this hobboing cutter 61 be one from hobboing cutter 61 centers the arcwall face of outwardly convex radially.During grinding, this rotating shaft 63 drives this hobboing cutter 61 rotations, this control device controls that this hobboing cutter 61 moves to that Bing Shiqi edge, 50 relevant position, reflector grinds reflector 50 downwards gradually until form the groove of appropriate depth, simultaneously, the inner surface of groove is ground in the corresponding side 611 of this hobboing cutter 61, thereby so repeatedly repeatedly on reflector 50, forms the accepting hole 51 of given shape.
Each accepting hole 51 roughly is bowl-shape and runs through up and down on the thickness direction in reflector 50, and it in order to accommodating luminescence chip 30 in the inner.The cross section ovalize of each accepting hole 51, its long axis direction is parallel to the longitudinal direction in reflector 50.Along reflector, 50 thickness direction from up to down reduces the internal diameter of each accepting hole 51 gradually.The smooth curved reflecting surface that the inner surface of each accepting hole 51 is a middle part indent, the light that it sends in order to reflect luminescence chip 30.
Form a junction 53 between two adjacent accepting holes 51, and this connecting portion 53 is corresponding to the receiving space 41 between two adjacent fluorescence coatings 40 on substrate 10, and the minimum widith of the top of this connecting portion 53 50 longitudinal extensions along reflector is less than or equal to this first interval parts and the second interval parts 15,17 width along substrate 10 longitudinal extensions, so that follow-up in cutting action, be not easy to switch to the first electrode 11 and the second electrode 13.
Step 6: fixed reflector 50, on substrate 10, and is contained in corresponding accepting hole 51 luminescence chip 30 on substrate 10.
Concrete, refer to Fig. 9, first between two of substrate 10 upper surfaces 101 adjacent fluorescence coatings 40, smear sticker 43, the luminescence chip 30 of again accepting hole in this reflector 50 51 being aimed on this substrate 10, and by the receiving space 41 between the fluorescence coating 40 of the 53 couples of pseudotwophase neighbours of connecting portion between two adjacent accepting holes 51, bonding this reflector 50 and substrate 10, thereby make this accepting hole 51 accommodate this luminescence chip 30 in the inner, preferably, make this luminescence chip 30 be positioned at the focus place of the curved reflecting surface of accepting hole 51.Given shape due to this accepting hole 51, and this luminescence chip 30 is positioned at the focus place of curved reflecting surface, from the light of these luminescence chip 30 these curved reflecting surfaces of directive after the reflecting surface reflection of this arc all with the parallel rays outgoing perpendicular to accepting hole 51 tops, again due to the light that this luminescence chip 30 middle parts are penetrated certainly and the convergence of rays that is reflected the face reflection in the outgoing of the top of accepting hole 51, thereby greatly improved the luminous efficiency of this light-emitting diode 1.
Understandable, in order further to strengthen albedo, can on this reflecting surface, apply a metallic reflector.
This connecting portion 53 is contained in the receiving space 41 between two adjacent fluorescence coatings 40 and supports and close the side surface of two adjacent the first electrodes 11 away from substrate 10, and the two adjacent mutual close both ends of the surface of fluorescence coating 40 are supported respectively in the relative both sides that make this connecting portion 53, part sticker 43 is contained in the first interval parts 15, and it is in order to fix this reflector 50 on substrate 10.
Step 7: refer to Figure 10, cover the encapsulated layer 57 of fluorescence coating 40 in the interior formation one of the accepting hole 51 in this reflector 50, this encapsulated layer 57 is made by transparent materials such as epoxy resin, silica gel.
Concrete; one shower nozzle 59 is provided; and this shower nozzle 59 is arranged at above this accepting hole 51; then utilize this shower nozzle 59 to adopt the mode of spraying to the interior sprinkling colloid of this accepting hole 51; thereby form gradually the encapsulated layer 57 of this fluorescence coating 40 of a covering; this encapsulated layer 57 has been protected luminescence chip 30 and fluorescence coating 40 preferably, has improved the mechanical strength of this light-emitting diode 1.In addition, the mode of adopt spraying can be so that the distribution of this encapsulated layer 57 be more even, thereby reaches the effect that improves light-emitting diode 1 Luminescence Uniformity.Be understood that, this encapsulated layer 57 also can adopt other modes such as drop or perfusion to form.
Step 8: refer to Figure 11, cutting reflector 50 forms a plurality of independently light-emitting diodes 1 with substrate 10.Preferably, during cutting, the thickness direction that utilizes cutting knife or other to cut the Yan Gai reflector, top 50 of the connecting portion 53 of tool between two adjacent accepting holes 51 cuts vertically downward, due to the first interval parts 15, the second interval parts 17 along substrate 10 longitudinally width be more than or equal to these connecting portion 53 tops along reflector 50 minimum widiths longitudinally, therefore when cutting, cut tool and can not cut to the first electrode 11 and the second electrode 13, only need cutting reflector 50, the sticker 43 and the substrate 10 that are positioned at the first interval parts 15 can be partitioned into a plurality of independently light-emitting diodes 1, therefore cutting process will be simpler, and can effectively extend the life-span of cutting tool.
In other embodiments, also can be not at the interior formation encapsulated layer 57 of the accepting hole 51 in this reflector 50, but after fixing with these substrate 10 combinations in this reflector 50, adopt the cutting mode identical with step 9, directly the top of the connecting portion 53 between two adjacent accepting holes 51 is cut downwards and is formed a plurality of light-emitting diodes 1 along the thickness direction of substrate 10.
To sum up, the manufacture method of light-emitting diode provided by the invention, processing procedure is simple, easy operating, especially, when to form inner surface be circular-arc accepting hole, precision is easy to control, and the light-emitting diode that adopts this method to make has the accepting hole of ad hoc structure, therefore there is higher luminous efficiency.
Claims (10)
1. the manufacture method of a light-emitting diode, it comprises the steps:
Substrate with electrode is provided;
Luminescence chip is provided, and it is electrically connected on described electrode;
The cremasteric reflex layer also provides hobboing cutter, drives the rotating shaft that described hobboing cutter rotates and the control device of controlling the hobboing cutter displacement, it is descending and grind described reflector until form the groove of appropriate depth that described control device is controlled hobboing cutter, simultaneously, the inner surface of groove is ground in the corresponding side of described hobboing cutter, thereby so repeatedly repeatedly on reflector, forms accepting hole;
Fixed reflector, on substrate, and is contained in corresponding accepting hole the luminescence chip on substrate.
2. the manufacture method of light-emitting diode as claimed in claim 1, it is characterized in that: described accepting hole roughly is bowl-shape and runs through up and down on the thickness direction in described reflector, and it in order to accommodating luminescence chip in the inner.
3. the manufacture method of light-emitting diode as claimed in claim 2, it is characterized in that: the cross section ovalize of described accepting hole, its long axis direction is parallel to the longitudinal direction in reflector, and the internal diameter of described accepting hole from up to down reduces gradually along the thickness direction in reflector.
4. the manufacture method of light-emitting diode as claimed in claim 3, is characterized in that: the smooth curved reflecting surface that the inner surface of described accepting hole is a middle part indent, the light that it sends in order to reflect luminescence chip.
5. the manufacture method of light-emitting diode as claimed in claim 4 is characterized in that: described luminescence chip is positioned at described focus place of accommodating the curved reflecting surface of cup.
6. the manufacture method of light-emitting diode as claimed in claim 1, it is characterized in that: described electrode comprises the first electrode and the second electrode that lays respectively at the upper and lower surface of substrate, offer along the substrate thickness direction guide hole that runs through described the second electrode and substrate by modes such as machine drilling or etchings on a lateral edges of described substrate, and first electrode on the upper and lower surface of described guide hole connection substrate and the second electrode.
7. the manufacture method of light-emitting diode as claimed in claim 1, is characterized in that: form and cover luminescence chip fluorescence coating in the inner on described electrode, and described fluorescence coating is contained in described accommodating in cup.
8. the manufacture method of light-emitting diode as claimed in claim 7, is characterized in that: form on described fluorescence coating and coat the encapsulated layer of fluorescence coating in accommodating cup.
9. the manufacture method of light-emitting diode as claimed in claim 7 is characterized in that: form receiving space between two adjacent fluorescence coatings, between two adjacent accepting holes, have connecting portion, described connecting portion is contained in described receiving space.
10. the manufacture method of light-emitting diode as claimed in claim 1 is characterized in that: described encapsulated layer adopts the mode of sprinkling, drop or perfusion to fill accepting hole.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101762200A CN103456861A (en) | 2012-05-31 | 2012-05-31 | Manufacturing method of light emitting diode |
| TW101121414A TW201349597A (en) | 2012-05-31 | 2012-06-14 | A method for manufacturing light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101762200A CN103456861A (en) | 2012-05-31 | 2012-05-31 | Manufacturing method of light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103456861A true CN103456861A (en) | 2013-12-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101762200A Pending CN103456861A (en) | 2012-05-31 | 2012-05-31 | Manufacturing method of light emitting diode |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103456861A (en) |
| TW (1) | TW201349597A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549088A (en) * | 2015-09-17 | 2017-03-29 | 光宝光电(常州)有限公司 | Light emitting display device |
| CN111952427A (en) * | 2020-08-24 | 2020-11-17 | 深圳雷曼光电科技股份有限公司 | Packaging method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179067A (en) * | 2006-11-06 | 2008-05-14 | 南茂科技股份有限公司 | Light source assembly and luminous chip packaging body |
| CN201780995U (en) * | 2010-08-23 | 2011-03-30 | 东贝光电科技股份有限公司 | Light emitting diode structure |
| CN102354693A (en) * | 2011-10-25 | 2012-02-15 | 佛山市国星光电股份有限公司 | Capsulation structure of surface light source including a plurality of reflection cups |
-
2012
- 2012-05-31 CN CN2012101762200A patent/CN103456861A/en active Pending
- 2012-06-14 TW TW101121414A patent/TW201349597A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179067A (en) * | 2006-11-06 | 2008-05-14 | 南茂科技股份有限公司 | Light source assembly and luminous chip packaging body |
| CN201780995U (en) * | 2010-08-23 | 2011-03-30 | 东贝光电科技股份有限公司 | Light emitting diode structure |
| CN102354693A (en) * | 2011-10-25 | 2012-02-15 | 佛山市国星光电股份有限公司 | Capsulation structure of surface light source including a plurality of reflection cups |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106549088A (en) * | 2015-09-17 | 2017-03-29 | 光宝光电(常州)有限公司 | Light emitting display device |
| CN106549088B (en) * | 2015-09-17 | 2018-11-16 | 光宝光电(常州)有限公司 | Light emitting display device |
| CN111952427A (en) * | 2020-08-24 | 2020-11-17 | 深圳雷曼光电科技股份有限公司 | Packaging method |
| CN111952427B (en) * | 2020-08-24 | 2022-05-06 | 深圳雷曼光电科技股份有限公司 | Packaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201349597A (en) | 2013-12-01 |
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Application publication date: 20131218 |