CN100585890C - Light emitting chip package and method of manufacturing the same - Google Patents

Abstract

The invention discloses a manufacturing method of a light-emitting chip package. A patterned metal plate and a substrate are bonded, and the patterned metal plate comprises at least a heat dissipation plate and a plurality of contacts, wherein the heat dissipation plate is located between the contacts. Bonding a thin film circuit layer and the patterned metal plate. Forming a plurality of wires to connect the thin film circuit layer and the contacts. At least one first sealant is formed on the substrate to cover the patterned metal plate, the conductive wires and a portion of the thin film circuit layer. At least one light-emitting chip is arranged on the thin film circuit layer exposed by the first sealing compound, the light-emitting chip is provided with a plurality of bumps, and the light-emitting chip is electrically connected with the thin film circuit layer through the bumps. A dicing process is performed to form at least one light emitting chip package, and the substrate is removed. Therefore, the light emitting chip package has better heat dissipation efficiency.

Description

Light-emitting chip package and manufacturing method thereof

technical field

The present invention relates to a light source module, and in particular to a light source module using a light-emitting chip package.

Background technique

In recent years, light emitting diode (LED) devices using gallium nitride-containing compound semiconductors, such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), etc., have attracted much attention. . Group III nitrides are materials with a wide band energy gap, and their emission wavelengths can cover from ultraviolet light to red light, so it can be said to almost cover the entire visible light band. In addition, compared with traditional light bulbs, light-emitting diodes have absolute advantages, such as small size, long life, low voltage/current drive, not easy to break, mercury-free (no pollution problem), and good luminous efficiency (power saving), etc., Therefore, light-emitting diodes are widely used in industry.

Since the light emitting phenomenon of light emitting diodes does not belong to thermoluminescence or discharge luminescence, but to cold luminescence, the life of light emitting diode devices can be as long as more than 100,000 hours under the condition of good heat dissipation, and there is no need for idling time . In addition, light-emitting diode devices have the advantages of fast response (about 10-9 seconds), small size, low power consumption, low pollution (mercury-free), high reliability, and suitable for mass production, so their application fields are very wide . Therefore, light-emitting diodes are regarded as the most important light source in the 21st century.

However, since the LEDs generate a large amount of heat energy during operation, and the brightness and lifetime of the LEDs are affected by temperature, when the power of the LEDs increases, the heat dissipation requirements gradually increase. The prior art uses a complex heat dissipation system, but the complex heat dissipation system will also cause problems such as excessive volume and increased cost.

Contents of the invention

In view of this, the object of the present invention is to provide a method for manufacturing a light-emitting chip package, so as to manufacture a light-emitting chip package with a longer service life.

In addition, the purpose of the present invention is to provide a light-emitting chip package to improve heat dissipation efficiency.

To achieve the above or other objectives, the present invention provides a method for manufacturing a light-emitting chip package, which includes the following steps. First, a patterned metal plate is bonded to a base material, and the patterned metal plate includes at least one heat dissipation plate and a plurality of contacts, wherein the heat dissipation plate is located between the contacts. Bonding a thin film circuit layer and patterned metal plate. A plurality of wires are formed to connect the thin film circuit layer and the contacts. A first sealant is formed on the substrate, and the first sealant has an opening to expose part of the thin film circuit layer to cover the patterned metal plate, the wires and part of the thin film circuit layer. At least one light-emitting chip is disposed on the thin-film circuit layer exposed by the first sealing opening, and the light-emitting chip has a plurality of bumps, and the light-emitting chip is electrically connected to the thin-film circuit layer through these bumps. A cutting process is performed to form at least one light emitting chip package. Finally the substrate is removed.

In an embodiment of the present invention, after disposing the light-emitting chip, the manufacturing method of the light-emitting chip package further includes forming a primer to cover the bumps.

In an embodiment of the present invention, after the primer is formed, the manufacturing method of the light-emitting chip package further includes forming a second sealant on the thin film circuit layer exposed by the first sealant to cover the light-emitting chip.

In an embodiment of the present invention, after disposing the light-emitting chip, the manufacturing method of the light-emitting chip package further includes forming a second sealant on the thin film circuit layer exposed by the first sealant to cover the light-emitting chip.

In an embodiment of the present invention, the step of bonding the patterned metal plate to the substrate includes bonding a metal plate to the substrate. A patterning process is performed on the metal plate to form a patterned metal plate.

In an embodiment of the invention, the step of bonding the thin film circuit layer and the patterned metal plate includes forming an insulating glue layer on the heat dissipation plate. The film circuit layer and the patterned metal plate are bonded through an insulating adhesive layer.

To achieve the above and other objectives, the present invention provides a light-emitting chip package, which includes a heat dissipation plate, multiple contacts, a thin film circuit layer, multiple wires, a first sealant and at least one light-emitting chip. Wherein, these contacts are arranged on the outside of the cooling plate. The thin film circuit layer is arranged on the heat dissipation plate and is electrically insulated from the heat dissipation plate. These wires are connected between the thin film circuit layer and the contacts. The first sealant is disposed above the heat dissipation plate and covers the wires, contacts and part of the thin film circuit layer, and the first sealant has an opening to expose part of the thin film circuit layer. The light emitting chip is arranged on the thin film circuit layer exposed by the opening, and the light emitting chip has a plurality of bumps, and the light emitting chip is electrically connected with the thin film circuit layer through the bumps.

In an embodiment of the present invention, the thin film circuit layer includes a patterned metal layer and a solder mask layer disposed on the patterned metal layer.

In an embodiment of the present invention, the package body of the light-emitting chip further includes a primer, which is arranged between the light-emitting chip and the thin film circuit layer to cover the bumps, and the light-emitting chip has an active surface and a back surface, wherein the bumps The block is arranged on the active surface, and the backside of the light-emitting chip is exposed.

In an embodiment of the present invention, the light-emitting chip package further includes a second sealant disposed in the opening to cover the light-emitting chip and the primer.

In an embodiment of the present invention, the light-emitting chip package further includes a second sealant disposed in the opening to cover the light-emitting chip.

In an embodiment of the present invention, the light-emitting chip package further includes an insulating glue layer disposed between the thin film circuit layer and the heat dissipation plate.

In an embodiment of the present invention, the heat dissipation plate and the contact are coplanar and made of the same material.

In an embodiment of the invention, the edges of the first sealant are aligned with the edges of the contacts.

In an embodiment of the present invention, the width of the opening gradually increases from the thin film circuit layer to the direction away from the thin film circuit layer.

In an embodiment of the present invention, the light emitting chip includes a light emitting diode or an organic light emitting diode.

Based on the above, since the present invention combines the thin film circuit layer and the metal plate to carry the light-emitting chip, the light-emitting chip package of the present invention has better heat dissipation efficiency and longer service life.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are exemplified below and described in detail with accompanying drawings.

Description of drawings

1A to 1H are schematic cross-sectional views of a manufacturing method of a light-emitting chip package according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a light-emitting chip package according to an embodiment of the present invention.

Detailed ways

1A to 1H are schematic cross-sectional views of a manufacturing method of a light-emitting chip package according to an embodiment of the present invention. Please refer to FIG. 1A , firstly, a metal plate 110 and a base material 210 are provided, and the base material 210 can be a removable temporary carrier, such as a tape or other films that are easily separated from the metal plate 110 . In addition, the material of the metal plate 110 can be copper, aluminum, or other metals with high thermal conductivity. Then, the metal plate 110 is bonded to the base material 210 , and the metal plate 110 and the base material 210 are bonded, for example, through an adhesive layer (not shown).

Referring to FIG. 1B , a patterning process is performed on the metal plate 110 to form a patterned metal plate 110 a. The patterned metal plate 110 a includes a plurality of heat dissipation plates 112 and a plurality of contacts 114 , wherein the heat dissipation plates 112 are located between the contacts 114 . However, the present embodiment does not limit the quantity of the cooling plate 112 and the number of the contacts 114 . For example, the number of heat dissipation plates 112 in this embodiment may be one. In addition, the patterning process includes a photolithography process and an etching process. Although the present embodiment discloses that the patterned metal plate 110a is formed by bonding the metal plate 110 and the substrate 210 first, and then forming the patterned metal plate 110a. However, in another embodiment, a patterned metal plate 110a may also be provided directly, and the patterned metal plate 110a and the substrate 210 are bonded together.

Referring to FIG. 1C , a thin film circuit layer 120 is provided, and the thin film circuit layer 120 is bonded to the patterned metal plate 110 a. In this embodiment, the thin film circuit layer 120 includes a patterned metal layer 122 and a solder mask layer 124 disposed on the patterned metal layer 122 . However, this embodiment does not limit the thin film circuit layer 120 to have a single-layer circuit, and the thin film circuit layer 120 may also have multi-layer circuits. In addition, when the bottom layer of the thin film circuit layer 120 is a metal layer, the step of bonding the thin film circuit layer 120 and the patterned metal plate 110 a includes forming an insulating glue layer 130 on the heat dissipation plate 112 . Then, the thin film circuit layer 120 is bonded to the patterned metal plate 110 a through the insulating glue layer 130 . Furthermore, when the bottom layer of the thin film circuit layer 120 is a dielectric layer, the thin film circuit layer 120 may also be bonded to the patterned metal plate 110a via the insulating glue layer 130 or directly.

Referring to FIG. 1D , a wire bonding process is performed to form a plurality of wires 140 , and these wires 140 are connected between the thin film circuit layer 120 and the contacts 114 . In addition, the wire 140 can be made of gold, copper or other metals.

Please refer to FIG. 1E , a molding process is performed to form a first molding 150 on the substrate 210, and the first molding 150 covers the patterned metal plate 110a, the wire 140 and part of the thin film circuit layer 120. And contact 114. It is worth noting that the opening 150a of the first sealant 150 needs to expose part of the thin film circuit layer 120 so as to facilitate the configuration of the light emitting chip 160 in the subsequent manufacturing process (details will be described later). In addition, after forming the first sealant 150 , a metal reflective layer (not shown) may also be formed on the inner wall of the opening 150 a by, for example, evaporation process, so as to improve the reflectivity of the first sealant 150 .

Please refer to FIG. 1F, a plurality of light-emitting chips 160 are disposed on the thin film circuit layer 120 exposed by the first sealant 150, and each light-emitting chip 160 has an active surface 160a, a back surface 160b and a plurality of bumps 162, wherein the bumps 162 are disposed on the active surface 160 a, and the light emitting chips 160 are electrically connected to the thin film circuit layer 120 through the bumps 162 .

Please refer to FIG. 1G, in order to ensure the electrical connection between the bump 162 and the thin film circuit layer 120, after disposing the light-emitting chip 160, a primer 170 can also be formed to cover the bump 162, and the primer 170 can be exposed. The back surface 160b of the light-emitting chip 160 is emitted. In addition, after the primer 170 is formed, a second sealant 180 may also be formed on the thin film circuit layer 120 exposed by the first sealant 150 to cover the light-emitting chip 160 . Alternatively, after the light-emitting chip 160 is configured, the second encapsulant 180 is directly formed without forming the primer 170 .

Referring to FIG. 1H , a cutting process is performed on the structure formed by the above process to form a plurality of light emitting chip packages 100 . Then, the substrate 210 is removed. So far, the manufacturing process of the light emitting chip package 100 is roughly completed. It should be noted that after the light-emitting chip 160 is configured, the dicing process can also be performed directly. Alternatively, after the primer 170 is formed, a cutting process is performed. After disposing the light-emitting chip 160 and directly forming the second encapsulant 180 , a dicing process is performed. In addition, the structure of the light emitting chip package 100 will be described in detail later.

FIG. 2 is a cross-sectional view of a light-emitting chip package according to an embodiment of the present invention. Please refer to FIG. 2 , the light emitting chip package 100 of this embodiment includes a heat sink 112 , a plurality of contacts 114 , a thin film circuit layer 120 , a plurality of wires 140 , a first encapsulant 150 and at least one light emitting chip 160 . Wherein, the contacts 114 are disposed outside the heat sink 112 . In this embodiment, since the heat dissipation plate 112 and the contact point 114 are formed by the same metal plate, the heat dissipation plate 112 and the contact point 114 are coplanar and made of the same material. However, in another embodiment, there may also be a height difference between the cooling plate 112 and the contact point 114 . In addition, in another embodiment, the heat sink 112 and the contact 114 can be made of different materials.

The thin film circuit layer 120 is disposed on the heat dissipation plate 114 and electrically insulated from the heat dissipation plate 114 . In this embodiment, the thin film circuit layer 120 includes a patterned metal layer 122 and a solder mask layer 124 disposed on the patterned metal layer 122 . However, this embodiment does not limit the thin film circuit layer 120 to have a single-layer circuit, and the thin film circuit layer 120 may also have multi-layer circuits.

In addition, when the bottom layer of the thin film circuit layer 120 is a metal layer, the light emitting chip package 100 further includes an insulating glue layer 130 disposed between the thin film circuit layer 120 and the heat dissipation plate 112 . However, when the bottom layer of the thin film circuit layer 120 is a dielectric layer, the thin film circuit layer 120 may also be bonded to the heat sink 112 via the insulating adhesive layer 130 or directly. In addition, the insulating adhesive layer 130 may also have thermal conductivity, so as to facilitate the conduction of heat generated by the light emitting chip 160 .

Please continue to refer to FIG. 2 , the wires 140 are connected to the thin film circuit layer 120 and the contacts 114 . In addition, the first sealant 150 is disposed above the heat dissipation plate 112 and covers the wires 140 , the contacts 114 and part of the thin film circuit layer 120 . The first sealant 150 has an opening 150a exposing a part of the thin film circuit layer 120 . In this embodiment, in order to improve the utilization rate of the light emitted by the light emitting chip 160, the width of the opening 150a gradually increases from the thin film circuit layer 120 to the direction away from the thin film circuit layer 120, so as to reflect the light emitted by the light emitting chip 160. . In addition, a metal reflective layer (not shown) may also be formed on the inner wall of the opening 150a to improve the reflectivity. Moreover, since the first sealant 150 and the contact 114 are cut, the edge of the first sealant 150 is aligned with the edge of the contact 114 .

The light emitting chip 160 is disposed on the thin film circuit layer 120 exposed by the opening 150 a , and the light emitting chip 160 has an active surface 160 a , a back surface 160 b and a plurality of bumps 162 . The bumps 162 are disposed on the active surface 160a, and the light-emitting chip is electrically connected to the thin film circuit layer 120 through the bumps 162 . In more detail, the bump 162 is electrically connected to the patterned metal layer 122 of the thin film circuit layer 120 . It should be noted that although the light emitting chip package 100 of this embodiment only has a single light emitting chip 160 , in another embodiment, the light emitting chip package 100 may also include a plurality of light emitting chips 160 . In addition, the light emitting chip 160 includes a light emitting diode or an organic light emitting diode.

The light-emitting chip package 100 may also include a primer 170 and/or a second sealant 180, wherein the primer 170 is disposed between the light-emitting chip 160 and the thin film circuit layer 120 to cover the bump 162 and expose the light-emitting The back side 160b of the chip 160 . Furthermore, the second encapsulant 180 is disposed in the opening 150 a to cover the light-emitting chip 160 and the primer 170 . In addition, the second encapsulant 180 is made of a transparent material, so the light emitted by the light-emitting chip 160 can pass through the second encapsulant 180 .

It should be noted that the second sealant 180 can also be doped with phosphor.

In summary, the light-emitting chip package and its manufacturing method of the present invention have at least the following advantages:

1. In the present invention, the thin-film circuit layer is bonded to the substrate with high thermal conductivity, so the heat energy generated during the operation of the light-emitting chip is transmitted to the outside through a very short path, so as to improve the service life and luminous efficiency of the light-emitting chip.

2. The contacts of the light-emitting chip package of the present invention are located at the bottom or side, so the light-emitting chip package can be assembled with other electronic devices by surface mount technology (SMT) or plug-in.

3. If the second sealant and solder mask layer of appropriate materials are selected, the ratio of the light emitted by the light-emitting chip to be absorbed will decrease.

4. Since the light-emitting chip is electrically connected to the thin-film circuit layer by means of flip-chip bonding, the light emitted by the light-emitting chip is less likely to be interfered by other components.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The protection scope of the invention should be defined by the claims.

Claims (16)

1. A method for manufacturing a light-emitting chip package, comprising: bonding a patterned metal plate and a base material, and the patterned metal plate includes at least one heat dissipation plate and a plurality of contacts, wherein the heat dissipation plate is located between the contacts; bonding a thin film circuit layer to the patterned metal plate; forming a plurality of wires to connect the thin film circuit layer and the contacts; At least one first sealant is formed on the substrate, the first sealant has an opening exposing part of the thin film circuit layer to cover the patterned metal plate, the wires and part of the thin film circuit layer; At least one light-emitting chip is disposed on the thin-film circuit layer exposed by the first sealing opening, and the light-emitting chip has a plurality of bumps, and the light-emitting chip is electrically connected to the thin-film circuit layer through the bumps; performing a dicing process to form at least one light emitting chip package; and The substrate is removed. 2 . The method for manufacturing a light-emitting chip package as claimed in claim 1 , further comprising forming a primer to cover the bumps after disposing the light-emitting chip. 3 . 3. The method for manufacturing a light-emitting chip package according to claim 2, further comprising forming a second sealant on the thin film circuit layer exposed by the first sealant after forming the primer , to cover the light-emitting chip. 4. The method for manufacturing a light-emitting chip package according to claim 1, further comprising forming a second sealant on the thin film circuit layer exposed by the first sealant after disposing the light-emitting chip , to cover the light-emitting chip. 5. The method for manufacturing a light-emitting chip package as claimed in claim 1, wherein bonding the patterned metal plate and the substrate comprises: joining a metal plate to the substrate; and A patterning process is performed on the metal plate to form the patterned metal plate. 6. The method of manufacturing a light-emitting chip package as claimed in claim 1, wherein bonding the thin film circuit layer and the patterned metal plate comprises: forming an insulating glue layer on the cooling plates; and The thin film circuit layer and the patterned metal plate are bonded through the insulating glue layer. 7. A light-emitting chip package, comprising: a cooling plate; A plurality of contacts are arranged on the outside of the cooling plate; a thin film circuit layer arranged on the heat dissipation plate and electrically insulated from the heat dissipation plate; a plurality of wires connecting the thin film circuit layer and the contacts; a first sealant, disposed above the heat dissipation plate, and covering the wires, the contacts and part of the thin film circuit layer, and the first sealant has an opening to expose part of the thin film circuit layer; and At least one light emitting chip is arranged on the thin film circuit layer exposed by the opening, and the light emitting chip has a plurality of bumps, and the light emitting chip is electrically connected with the thin film circuit layer through the bumps. 8 . The light-emitting chip package as claimed in claim 1 , wherein the thin film circuit layer comprises a patterned metal layer and a solder mask layer disposed on the patterned metal layer. 9. The light-emitting chip package according to claim 7, further comprising a primer disposed between the light-emitting chip and the thin film circuit layer to cover the bumps, and the light-emitting chip has An active surface and a back surface, wherein the protrusions are disposed on the active surface, and the primer exposes the back surface. 10 . The light-emitting chip package as claimed in claim 9 , further comprising a second sealant disposed in the opening to cover the light-emitting chip and the primer. 11 . 11. The light-emitting chip package as claimed in claim 7, further comprising a second sealant disposed in the opening to cover the light-emitting chip. 12 . The light-emitting chip package as claimed in claim 7 , further comprising an insulating adhesive layer disposed between the thin film circuit layer and the heat dissipation plate. 13 . 13. The light-emitting chip package as claimed in claim 7, wherein the heat dissipation plate and the contacts are coplanar and made of the same material. 14. The light-emitting chip package as claimed in claim 7, wherein the edges of the first encapsulant are aligned with the edges of the contacts. 15. The light-emitting chip package as claimed in claim 7, wherein the width of the opening gradually increases from the thin film circuit layer to a direction away from the thin film circuit layer. 16. The light emitting chip package as claimed in claim 7, wherein the light emitting chip comprises a light emitting diode or an organic light emitting diode.

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