CN101179007A - Ultrasonic cleaning monocrystalline silicon piece method and device thereof - Google Patents
Ultrasonic cleaning monocrystalline silicon piece method and device thereof Download PDFInfo
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- CN101179007A CN101179007A CNA2007101571753A CN200710157175A CN101179007A CN 101179007 A CN101179007 A CN 101179007A CN A2007101571753 A CNA2007101571753 A CN A2007101571753A CN 200710157175 A CN200710157175 A CN 200710157175A CN 101179007 A CN101179007 A CN 101179007A
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- silicon wafer
- rinse bath
- monocrystalline silicon
- grinding
- ultrasonic
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Abstract
A method and a device to rinse mono-crystalline silicon wafer are provided. The method is: put the grinding silicon wafer to be rinsed horizontally on a fence-shaped quartz rod frame over the bottom of a cleanout trough. On condition that de-ionized water in the cleanout trough reaches a certain level and flows constantly, an ultrasonic vibrator with a frequency of 40KHz on the bottom of the cleanout trough rinses the grinding silicon wafer. The grinding silicon wafer, which be turned over once every five minutes, and be rinsed constantly until no black pollutant appears from the surface. The bottom wall of the device used for supporting the mono-crystalline silicon wafer frame is made of quartz rods and the whole frame is supported in the cleanout trough by the supporting legs. By changing the vertical shape into a horizontal one, the invention solves the problem that parts of the silicon wafer are hard to be rinsed cleanly because the distances between the ultrasonic source and the silicon wafer are different and pollutants can be easily piled up under the surface of the silicon wafer, and the circumstance that parts of the silicon wafer can not be rinsed cleanly because the soft basket used for supporting the silicon wafer which is made of PTFE material absorbs and blocks off the transfer of ultrasonic source, can also be avoided.
Description
[technical field]
The invention belongs to a kind of monocrystalline silicon piece cleaning technique, especially relate to a kind of method and device thereof that utilizes ultrasonic cleaning monocrystalline silicon piece.
[background technology]
In the semi-conductor silicon chip course of processing, each procedure all can relate to cleaning, because a lot of semi-conductor discrete devices are that directly manufacturing or substrate diffusion form on silicon abrasive sheet surface, therefore, the quality of cleaning silicon abrasive sheet quality will directly influence next process, even influencing the rate of finished products and the reliability of device, the purpose of cleaning is exactly in order to remove attached to pollutants such as the organic compound on the silicon chip surface, metal impurities or particulates.At present, common cleaning method is to adopt ultrasonic waves for cleaning, this method utilization comprises the ultrasonic cleaning equipment of a rinse bath, the cell wall of this device rinse bath is provided with deionized water and imports and exports, deionized water is in flow regime all the time under the situation of keeping certain height, ultrasonic oscillator is located at the bottom land below of rinse bath.During cleaning, will be cleaned perpendicular successively being inserted in of silicon chip earlier and carry in the gaily decorated basket, and immerse in the deionized water, and wash through 6～8 road stations are super, the per pass station is super to be washed 10～15 minutes, then, through deionization pure water rinsing, rinsing, finished super washing after the drying.
The defective that above-mentioned method for suppersonic cleaning exists is: on the one hand, silicon chip is perpendicular to be inserted in the carrying gaily decorated basket, up emission and silicon chip take place vertically to contacts side surfaces in ultrasound source from the bottom, there is a ultrasound source gradient problem, make cleaning inhomogeneous, and the super after stain thing meeting residual packing of washing forms regional area and cleans clean phenomenon in the bottom of silicon chip; On the other hand, the software gaily decorated basket of the carrying silicon chip that the poly-PTFE of usefulness is made can adsorb and stop hyperacoustic transmission, thereby also can cause the silicon chip surface regional area to clean sordid phenomenon.
[summary of the invention]
For overcoming the above-mentioned technical problem that prior art exists, the present invention aims to provide a kind of improved ultrasonic cleaning monocrystalline silicon piece method and device thereof, utilize this method to clean the semiconductor silicon abrasive sheet, can remove fast, equably attached to its surperficial pollutant, and the super after stain thing meeting residual packing of washing can not appear at silicon chip surface, and software gaily decorated basket absorption and stop the ultrasonic wave transmission, take place thereby cause the silicon chip surface regional area to clean sordid phenomenon.
For achieving the above object, the present invention has adopted following technical scheme: a kind of cleaning monocrystalline silicon piece method, it is characterized in that: will be washed on the horizontal quartz pushrod framework that is placed on bottom of rinse bath top paliform of grinding silicon chip, in guaranteeing rinse bath, have the deionized water height and the moving condition that continues to flow under, the ultrasonic oscillator that utilization is located at bottom of rinse bath cleans, ultrasonic frequency is 40KHz, grinding silicon chip turned over a face in per 5 minutes, super continuously being washed till do not had the black pollution thing to emerge by the super grinding silicon chip surface of washing to end.
Aforesaid cleaning monocrystalline silicon piece method is characterized in that: the continuously super time of washing is 10～15 minutes.
The ultrasonic waves for cleaning grinding silicon chip device that a kind of said method adopted, its structure comprises rinse bath, the cell wall of rinse bath is provided with water inlet and delivery port, the groove inner bottom part is provided with ultrasonic oscillator, its main points are: be provided with a framework of shelving grinding silicon chip in the rinse bath groove, the framework diapire is the quartz pushrod of paliform, and the plane of many quartz pushrod formation is lower than the deionized water horizontal plane, and whole framework is supported in the rinse bath by feet.
Aforesaid ultrasonic waves for cleaning grinding silicon chip device is characterized in that: the diapire of quartz pushrod plan range rinse bath is 15 centimetres.
Beneficial effect: compared with prior art, the present invention creatively will be originally vertically surpasses to wash and has made horizontal placement grinding silicon chip into and surpass and wash to placing grinding silicon chip, solved because of silicon chip apart from ultrasound source do not wait, pollutant easily is deposited in the problem that the silicon chip surface bottom causes the part to be difficult to clean up, and the software gaily decorated basket of having eliminated the carrying silicon chip made from poly-PTFE can adsorb and stop the transmission of ultrasound source, causes the silicon chip surface regional area to clean sordid phenomenon.Overcome when originally thinking super washing, technology prejudice that can not be stacked between the silicon chip, facts have proved, owing to be that a spot of silicon chip is stacked, under the ultrasonic wave effect, silicon chip can produce trickle vibration under ripples and bubble influence, and can not influence the cleaning of overlapping part, add in the cleaning process and stir silicon chip at interval, guaranteed cleaning quality.To erect to surpass and make into to have obtained beyond thought effect after flat surpassing, and device improves simply, uses conveniently.
For sharpening understanding, also the invention will be further described in conjunction with the accompanying drawings below by embodiment.
[description of drawings]
Fig. 1 is an embodiment perspective view of cleaning device of the present invention.
Sequence number is represented respectively among the figure: frame side wall 1, rinse bath sidewall 2, water inlet 3, ultrasonic oscillator installing frame 4, quartz pushrod 5, monocrystalline silicon piece 6.
[embodiment]
Referring to Fig. 1.Rinse bath sidewall 2 usefulness UPVC plates are made, and it is the casing that a rectangle does not have the top, and water inlet 3 and delivery port both can guarantee to have certain deionized water height in the rinse bath, can make deionized water be in flow regime again.The trench bottom below is provided with ultrasonic oscillator installing frame 4.Shelve the framework of monocrystalline silicon piece 6, diapire is the quartz pushrod 5 of paliform, and many quartz pushrods 5 form a plane, and this plane is lower than the deionized water horizontal plane, and whole framework is supported in the rinse bath by feet.
For reaching best cleaning performance, the applicant has made repetition test, and the plan range rinse bath diapire at quartz pushrod place is preferably 15 centimetres.
Cleaning method is: will be washed on the horizontal quartz pushrod framework that is placed on bottom of rinse bath top paliform of grinding silicon chip, in guaranteeing rinse bath, have the deionized water height and the moving condition that continues to flow under, the ultrasonic oscillator that utilization is located at bottom of rinse bath cleans, ultrasonic frequency is 40KHz, grinding silicon chip turned over a face in per 5 minutes, super continuously being washed till do not had the black pollution thing to emerge by the super grinding silicon chip surface of washing to end.
The aforesaid continuously super time of washing is 10～15 minutes.
Claims (4)
1. cleaning monocrystalline silicon piece method, it is characterized in that: will be washed on the horizontal quartz pushrod framework that is placed on bottom of rinse bath top paliform of grinding silicon chip, in guaranteeing rinse bath, have the deionized water height and the moving condition that continues to flow under, the ultrasonic oscillator that utilization is located at bottom of rinse bath cleans, ultrasonic frequency is 40KHz, grinding silicon chip turned over a face in per 5 minutes, super continuously being washed till do not had the black pollution thing to emerge by the super grinding silicon chip surface of washing to end.
2. a kind of cleaning monocrystalline silicon piece method as claimed in claim 1 is characterized in that: the continuously super time of washing is 10～15 minutes.
3. ultrasonic cleaning monocrystalline silicon piece device, comprise rinse bath, the cell wall of rinse bath is provided with water inlet (3) and delivery port, the trench bottom below is provided with ultrasonic oscillator, it is characterized in that: be provided with one in the rinse bath groove and shelve the framework of monocrystalline silicon piece (6), the framework diapire is the quartz pushrod (5) of paliform, and the plane that quartz pushrod (5) forms is lower than the deionized water horizontal plane, and whole framework is supported in the rinse bath by feet.
4. a kind of ultrasonic cleaning monocrystalline silicon piece device as claimed in claim 3 is characterized in that: quartz pushrod (5) is 15 centimetres apart from the rinse bath diapire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101571753A CN100481324C (en) | 2007-11-27 | 2007-11-27 | Ultrasonic cleaning monocrystalline silicon piece method and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101571753A CN100481324C (en) | 2007-11-27 | 2007-11-27 | Ultrasonic cleaning monocrystalline silicon piece method and device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101179007A true CN101179007A (en) | 2008-05-14 |
| CN100481324C CN100481324C (en) | 2009-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007101571753A Expired - Fee Related CN100481324C (en) | 2007-11-27 | 2007-11-27 | Ultrasonic cleaning monocrystalline silicon piece method and device thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113696087A (en) * | 2021-10-07 | 2021-11-26 | 广西新未来信息产业股份有限公司 | Vibration grinding disc cleaning process for piezoresistor ceramic chip |
| CN115463894A (en) * | 2022-09-02 | 2022-12-13 | 曲靖阳光新能源股份有限公司 | Ultrasonic cleaning device and cleaning method for silicon wafer |
| CN117019761A (en) * | 2023-10-10 | 2023-11-10 | 常州捷佳创精密机械有限公司 | Ultrasonic/megasonic cleaning tank |
-
2007
- 2007-11-27 CN CNB2007101571753A patent/CN100481324C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113696087A (en) * | 2021-10-07 | 2021-11-26 | 广西新未来信息产业股份有限公司 | Vibration grinding disc cleaning process for piezoresistor ceramic chip |
| CN115463894A (en) * | 2022-09-02 | 2022-12-13 | 曲靖阳光新能源股份有限公司 | Ultrasonic cleaning device and cleaning method for silicon wafer |
| CN115463894B (en) * | 2022-09-02 | 2024-06-11 | 曲靖阳光新能源股份有限公司 | Ultrasonic cleaning device and method for silicon wafer |
| CN117019761A (en) * | 2023-10-10 | 2023-11-10 | 常州捷佳创精密机械有限公司 | Ultrasonic/megasonic cleaning tank |
| CN117019761B (en) * | 2023-10-10 | 2024-01-23 | 常州捷佳创精密机械有限公司 | Ultrasonic/megasonic cleaning tank |
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| Publication number | Publication date |
|---|---|
| CN100481324C (en) | 2009-04-22 |
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Granted publication date: 20090422 Termination date: 20151127 |