CN101176075B - Circuit and method for improving service lifetime of memory device - Google Patents
Circuit and method for improving service lifetime of memory device Download PDFInfo
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- CN101176075B CN101176075B CN200680016865.0A CN200680016865A CN101176075B CN 101176075 B CN101176075 B CN 101176075B CN 200680016865 A CN200680016865 A CN 200680016865A CN 101176075 B CN101176075 B CN 101176075B
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Abstract
A circuit of enhancing the storage lifetime includes: a main storage medium, a main storage medium controller, controlling the data access of the main storage medium, comprising a main storage together with the main storage medium, also includes a long lifetime storage medium, storing the basic information and/or the other data needed frequent reading/writing, a long lifetime storage medium controller, controlling the data access of the long lifetime storage medium, comprising a long lifetime storage together with the long lifetime storage medium.
Description
Technical field
The present invention relates to the computer memory technology, relate in particular to a kind of circuit and method that can improve inside or external memory storage serviceable life.
Background technology
Present nonvolatile semiconductor memory member, comprising: the memory technology of magnetic, light and semiconductor memory constantly develops, and makes the capacity of hard disk, read-write CD, magneto-optic disk, semiconductor mobile memory card constantly increase, and function constantly strengthens, and performance is updated.But receive the restriction of some factor its serviceable life, has influence on application in some aspects.
Inner and/or outside Nonvolatile data file memory is meant but is not limited to use to have medium or higher inside and/or the outside Nonvolatile data file memory that repeats to write the storage mediums such as light, magnetic store and nonvolatile semiconductor memory of indegree restriction arranged.Various disks (comprising hard disk) its serviceable life is long relatively; Approximately be the serviceable life in several years, but in its useful life period, owing to inside or outside reason; It is that zero track and FAT memory block are easy to damage; In case and this position damages, the data of DISK to Image storage have just all been lost, and the loss that causes is very big.And the present CD that can repeat to write repeat that to write indegree approximately be about several thousand times, the flash card made of semiconductor flash memory medium (Flash Memory) etc. repeats that to write indegree approximately be 10 at present
6About, operate at full capacity and approximately have only 200 hours serviceable life.These inside and/or outside Nonvolatile data file memory are much of that if make general storage file; But if use as the place that need read and write repeatedly; When using like the data-carrier store in the black box that perhaps need carry out data storage as the computer virtual storer repeatedly; Just be very easy to damage, need often to change.Have medium or higher inside and/or the outside Nonvolatile data file memory that repeats to write the storage mediums such as light, magnetic and nonvolatile semiconductor memory of indegree restriction arranged as use, receive the restriction that repeats to write various factors such as indegree restriction of CD, disk and non-volatile RAM its serviceable life.
Improve at present the research in serviceable life of inner and/or outside Nonvolatile data file memory in the world, mainly on the serviceable life of improving storage medium itself, study.This type of research can change storage medium usually, changes existing storer and computer system hardware and constitutes, and tends to increase considerably the newly manufacturing cost and the use cost of the storer of development.
Summary of the invention
Technical matters to be solved by this invention is the deficiency that overcomes prior art; Provide a kind of under the situation of the hardware configuration, interface type, packing forms and the use-pattern that do not change existing various nonvolatile memories, improve the inner and/or outside Nonvolatile data file memory circuit in serviceable life.A kind of method of the storer based on this kind structure being carried out data access control is provided simultaneously.
A kind ofly can improve the storer circuit in serviceable life, comprise:
The primary storage medium controller, the function and the purposes of said primary storage medium controller are: the data access of its control primary storage medium, it constitutes primary memory together with primary storage medium,
It is characterized in that, also comprise: long-life non-volatile memory medium controller,
The function and the purposes of said long-life non-volatile memory medium controller are: it has control long-life non-volatile memory medium access to need the ability of the data of frequent read-write; It constitutes the long-life storer together with the long-life non-volatile memory medium, and memory controller, primary memory and long-life storer constitute storer together;
Said long-life non-volatile memory medium is meant: a. is than the non-volatile memory medium of the more repetitive read-write number of times of primary storage medium; B. do not allow flimsy non-volatile memory medium more than primary storage medium.
Particularly, comprise also that long-life non-volatile memory medium controller and long-life non-volatile memory medium constitute the long-life storer together;
Said long-life storer has access to need the ability of the data of frequent read-write, and memory controller, primary memory and long-life storer constitute storer together.
Particularly; Said long-life non-volatile memory medium controller has the essential information of the frequent read-write of control long-life non-volatile memory medium access and the ability of other data; It constitutes the long-life storer together with the long-life non-volatile memory medium, and memory controller, primary memory and long-life storer constitute storer together.
Particularly, said long-life storer has the essential information of the frequent read-write of access and the ability of other data, and memory controller, primary memory and long-life storer constitute storer together.
Particularly, said primary memory is external memory storage or internal storage.
Particularly, said long-life non-volatile memory medium is one of flash memories, magnet random access memory, resistance random access memory, ferroelectric random storer, the phase transition storage that uses phase change or ultrahigh density storage device.
Particularly, said primary memory is for to be applied to: one of the inside of ATA, SATA, SCSI, USB, IEEE 1394 or bluetooth or outside nonvolatile semiconductor memory.
Particularly, said primary memory is for to be applied to: one of storage card, optical memory, magneto-optic memory or disk of ATA, SATA, SCSI, USB, IEEE 1394 or bluetooth.
Particularly, comprise the following steps, in " MBR ", write the information of long-life storer and primary memory.
Particularly, comprise the following steps, in " internal initialization parameter list " or " internal initialization parameter set ", write the information of long-life storer and primary memory.
Particularly, when the storage medium of primary memory and/or long-life storer is non-volatile memory medium, also comprise the following steps: in BIOS, to write the data of long-life storer.
Particularly; The storage medium use of long-life storer and the non-volatile memory medium of primary storage medium identical type; But the characteristic with read-write number of times serviceable life more more than read-write number of times serviceable life of primary storage medium is by this non-volatile memory medium with the storage medium in more read-write number of times serviceable life as the long-life storer.
Particularly, when storer is carried out data access, comprise the following steps:
(1) from primary memory, reads the essential information and other data that needs frequent read-write, store in the long-life storer;
The correspondence table that is associated between the address of the essential information of the frequent read-write of the needs of (2) setting up in the long-life storer to be stored and the address in the primary memory.
Particularly, when primary memory is carried out data access, comprise the following steps:
(1) will need the essential information of frequent read-write to be installed in the long-life storer;
(2) later on then directly in the long-life storer, carry out the essential information operation during access of data files and use.Particularly, also comprise the following steps:
Then directly in the long-life storer, needs later on the operation and the use of essential information and other data of frequent read-write during access of data files.
Particularly, also comprise the following steps:
When carrying out data access operation, whether the data address of retrieving required access is the address in the above-mentioned correspondence table, if, access data in the long-life storer then, otherwise, access data in primary memory.
Particularly, in shutdown or take out primary storage medium, and/or when reaching prior official hour, also comprise the following steps: the essential information of the frequent read-write of the needs of being stored in the long-life storer and other data storage in primary storage medium.
The present invention has with respect to the short read-write number of times of primary storage medium, shorter serviceable life through use; More read-write number of times is arranged, than the non-volatile RAM of long life; And/or has a nonvolatile memory than the long life; And/or volatibility random access memory; Replace in inner and/or the outside Nonvolatile data file memory have shorter serviceable life relatively mediumly repeat to write the indegree restriction, higher " essential information " district of storage read-write frequency in the higher storage medium that repeats to write the indegree restriction is perhaps arranged, and/or the storage medium of the storage area that need frequently read and write data as virtual memory etc.; What lower primary storage medium repeats to write indegree restriction, the serviceable life of improving inside and/or outside Nonvolatile data file memory.The physical storage that the storage medium by than the long life that increases newly constitutes; Also can be used as the storer of various application, as: the various storeies of memory buffer of the storer of storing applied data file and/or temporary transient storing data files or the like according to designing requirement or user's requirement.
Note:
1. " data file " is meant the various types of data and the data file of the various needs storages that comprise the basic input/output (BIOS) installed on the motherboard etc.
2. inner and/or outside Nonvolatile data file memory is meant in order to preserve various types of data and data file on integrated circuit (like single-chip microcomputer inside) and/or motherboard and/or non-volatile memory medium and/or the nonvolatile memory installed in order to preserve various types of data and data file through data communication or the like between external unit and the motherboard.
3. inner and/or outside Nonvolatile data file memory carries out " essential information " and/or other kind data that data read, all needed when storing frequent read-write; With the dos operating system is that example comprises: Partition Table, ROOT, MBR, DBR, FAT table or the like memorizer information and storage positions of files information, ROOT also is called DIR (DIR=Directory)
Claims (22)
1. one kind can be improved the storer circuit in serviceable life, comprising:
The primary storage medium controller, the function and the purposes of said primary storage medium controller are: the data access of its control primary storage medium, it constitutes primary memory together with primary storage medium,
It is characterized in that, also comprise:
Long-life non-volatile memory medium controller,
The function and the purposes of said long-life non-volatile memory medium controller are: it has control long-life non-volatile memory medium access to need the ability of the data of frequent read-write; It constitutes the long-life storer together with the long-life non-volatile memory medium, and memory controller, primary memory and long-life storer constitute storer together;
Said long-life non-volatile memory medium is meant: a. is than the non-volatile memory medium of the more repetitive read-write number of times of primary storage medium; B. do not allow flimsy non-volatile memory medium more than primary storage medium.
2. circuit according to claim 1 comprises:
The primary memory that primary storage medium controller and primary storage medium constitute,
It is characterized in that, also comprise that long-life non-volatile memory medium controller and long-life non-volatile memory medium constitute the long-life storer together;
Said long-life storer has access to need the ability of the data of frequent read-write, and memory controller, primary memory and long-life storer constitute storer together.
3. circuit according to claim 1 is characterized in that,
Said long-life non-volatile memory medium controller has the essential information of the frequent read-write of control long-life non-volatile memory medium access and the ability of other data; It constitutes the long-life storer together with the long-life non-volatile memory medium, and memory controller, primary memory and long-life storer constitute storer together.
4. circuit according to claim 1 and 2 is characterized in that,
Said long-life storer has the essential information of the frequent read-write of access and the ability of other data, and memory controller, primary memory and long-life storer constitute storer together.
5. circuit according to claim 1 and 2 is characterized in that, said primary memory is external memory storage or internal storage.
6. circuit according to claim 1 and 2; It is characterized in that said long-life non-volatile memory medium is one of flash memories, magnet random access memory, resistance random access memory, ferroelectric random storer, the phase transition storage that uses phase change or ultrahigh density storage device.
7. circuit according to claim 1 and 2 is characterized in that, said primary memory is for to be applied to: one of the inside of ATA, SATA, SCSI, USB, IEEE 1394 or bluetooth or outside nonvolatile semiconductor memory.
8. circuit according to claim 1 and 2 is characterized in that, said primary memory is for to be applied to: one of storage card, optical memory, magneto-optic memory or disk of ATA, SATA, SCSI, USB, IEEE 1394 or bluetooth.
9. circuit according to claim 1 and 2 is characterized in that, comprises the following steps, in " MBR ", writes the information of long-life storer and primary memory.
10. circuit according to claim 1 and 2 is characterized in that, comprises the following steps, in " internal initialization parameter list " or " internal initialization parameter set ", writes the information of long-life storer and primary memory.
11. circuit according to claim 1 and 2 is characterized in that, when the storage medium of primary memory and/or long-life storer is non-volatile memory medium, also comprises the following steps: in BIOS, to write the data of long-life storer.
12. circuit according to claim 1 and 2; It is characterized in that; The storage medium use of long-life storer and the non-volatile memory medium of primary storage medium identical type; But the characteristic with read-write number of times serviceable life more more than read-write number of times serviceable life of primary storage medium is by this non-volatile memory medium with the storage medium in more read-write number of times serviceable life as the long-life storer.
13. one kind is adopted the described circuit of claim 3 to realize improving the storer method in serviceable life, it is characterized in that, when storer is carried out data access, comprises the following steps:
(1) from primary memory, reads the essential information that needs frequent read-write, store in the long-life storer;
The correspondence table that is associated between the address of the essential information of the frequent read-write of the needs of (2) setting up in the long-life storer to be stored and the address in the primary memory.
14. one kind is adopted the described circuit of claim 4 to realize improving the storer method in serviceable life, it is characterized in that, when storer is carried out data access, comprises the following steps:
(1) from primary memory, reads the essential information and other data that needs frequent read-write, store in the long-life storer;
The correspondence table that is associated between the essential information of the frequent read-write of the needs of (2) setting up in the long-life storer to be stored and the address of other data and the address in the primary memory.
15. one kind is adopted the described circuit of claim 3 to realize improving the storer method in serviceable life, it is characterized in that, when primary memory is carried out data access, comprises the following steps:
(1) will need the essential information of frequent read-write to be installed in the long-life storer;
(2) later on then directly in the long-life storer, carry out the essential information operation during access of data files and use.
16. one kind is adopted the described circuit of claim 4 to realize improving the storer method in serviceable life, it is characterized in that,
When primary memory is carried out data access, comprise the following steps:
(1) will need the essential information of frequent read-write and other data to be installed in the long-life storer;
(2) later on then directly in the long-life storer, carry out the essential information operation during access of data files and use.
17. the method in raising storer according to claim 13 serviceable life is characterized in that, also comprises the following steps:
The operation and the use of the essential information that then directly in the long-life storer, needs during access of data files later on frequently to read and write.
18. the method in raising storer according to claim 14 serviceable life is characterized in that, also comprises the following steps:
Then directly in the long-life storer, needs later on the operation and the use of essential information and other data of frequent read-write during access of data files.
19. the method in raising storer according to claim 13 serviceable life is characterized in that, also comprises the following steps:
When carrying out data access operation, whether the data address of retrieving required access is the address in the above-mentioned correspondence table, if, access data in the long-life storer then, otherwise, access data in primary memory.
20. the method in raising storer according to claim 14 serviceable life is characterized in that, also comprises the following steps:
When carrying out data access operation, whether the data address of retrieving required access is the address in the above-mentioned correspondence table, if, access data in the long-life storer then, otherwise, access data in primary memory.
21. the method in raising storer according to claim 14 serviceable life is characterized in that, in shutdown or take out primary storage medium, and/or when reaching prior official hour, also comprises the following steps:
The essential information of the frequent read-write of the needs of being stored in the long-life storer is stored in the primary storage medium.
22. the method in raising storer according to claim 16 serviceable life is characterized in that, in shutdown or take out primary storage medium, and/or when reaching prior official hour, also comprises the following steps:
With the essential information of the frequent read-write of the needs of being stored in the long-life storer and other data storage in primary storage medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN200680016865.0A CN101176075B (en) | 2005-05-18 | 2006-04-27 | Circuit and method for improving service lifetime of memory device |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510013525 CN1749971A (en) | 2005-05-18 | 2005-05-18 | Improving service life of internal or external storage by using long lift non-volatile storage chip |
| CN200510013525.X | 2005-05-18 | ||
| CN200610013317.4 | 2006-03-16 | ||
| CN 200610013317 CN101038529A (en) | 2006-03-16 | 2006-03-16 | Prolonging service life of internal or external memory with long service non-volatile memory chip |
| CN200680016865.0A CN101176075B (en) | 2005-05-18 | 2006-04-27 | Circuit and method for improving service lifetime of memory device |
| PCT/CN2006/000815 WO2006122474A1 (en) | 2005-05-18 | 2006-04-27 | A circuit and method of enhancing the storage lifetime |
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| Publication Number | Publication Date |
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| CN101176075A CN101176075A (en) | 2008-05-07 |
| CN101176075B true CN101176075B (en) | 2012-12-12 |
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| CN 200510013525 Pending CN1749971A (en) | 2005-05-18 | 2005-05-18 | Improving service life of internal or external storage by using long lift non-volatile storage chip |
| CN200680016865.0A Expired - Fee Related CN101176075B (en) | 2005-05-18 | 2006-04-27 | Circuit and method for improving service lifetime of memory device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101782873B (en) * | 2009-01-15 | 2014-07-09 | 旺玖科技股份有限公司 | External storage device having security function |
| CN103729302A (en) * | 2014-01-02 | 2014-04-16 | 厦门雅迅网络股份有限公司 | Method for preventing flash subarea from being frequently read and written |
| CN109976970B (en) * | 2017-12-28 | 2022-11-15 | 深圳Tcl新技术有限公司 | Method, system and storage medium for prolonging service life of mainboard chip |
| CN113419680A (en) * | 2021-06-28 | 2021-09-21 | 南京新联电能云服务有限公司 | Storage method and system |
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| CN1351350A (en) * | 2000-10-27 | 2002-05-29 | 岳京星 | Method for partitioning memory block and identifying R/W information in flash memory |
| CN1362708A (en) * | 2001-01-02 | 2002-08-07 | 吴秀林 | Read-write method for flash memory chip |
| CN1577292A (en) * | 2003-07-28 | 2005-02-09 | 深圳市朗科科技有限公司 | Memory control chip and data memory control method |
| CN2854694Y (en) * | 2005-05-18 | 2007-01-03 | 程滋颐 | Prolonging service life of internal or external storage by long service life non-volatility storage chip |
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2005
- 2005-05-18 CN CN 200510013525 patent/CN1749971A/en active Pending
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- 2006-04-27 CN CN200680016865.0A patent/CN101176075B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351350A (en) * | 2000-10-27 | 2002-05-29 | 岳京星 | Method for partitioning memory block and identifying R/W information in flash memory |
| CN1362708A (en) * | 2001-01-02 | 2002-08-07 | 吴秀林 | Read-write method for flash memory chip |
| CN1577292A (en) * | 2003-07-28 | 2005-02-09 | 深圳市朗科科技有限公司 | Memory control chip and data memory control method |
| CN2854694Y (en) * | 2005-05-18 | 2007-01-03 | 程滋颐 | Prolonging service life of internal or external storage by long service life non-volatility storage chip |
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| JP特开平10-260912A 1998.09.29 |
| JP特开平8-241599A 1996.09.17 |
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| CN101176075A (en) | 2008-05-07 |
| CN1749971A (en) | 2006-03-22 |
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