CN101160647A - 连续热处理器布局 - Google Patents

连续热处理器布局 Download PDF

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CN101160647A
CN101160647A CNA2005800271479A CN200580027147A CN101160647A CN 101160647 A CN101160647 A CN 101160647A CN A2005800271479 A CNA2005800271479 A CN A2005800271479A CN 200580027147 A CN200580027147 A CN 200580027147A CN 101160647 A CN101160647 A CN 101160647A
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张健
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Abstract

一种用于处理由半导体材料制成的晶片的连续热处理站布局，对晶片进行多个甲酸处理步骤。将晶片装载入处于大气压力下的初始站处的腔室中，并利用氮气吹洗该腔室；在第一个随后的站(1)和第二个随后的站(2)处，将甲酸蒸气和氮气引入，其中在环境大气压力下加热晶片；将晶片旋转至处于真空下的第三个随后的站(3)，在没有化学处理的情况下加热晶片；将晶片旋转至第四个随后的站(4)，将甲酸蒸气和氮气引入，在环境大气压力下加热晶片；将晶片旋转至第五个随后的站(5)，将氮气引入，并在环境大气压力下冷却晶片；以及将晶片旋转至第六个随后的站(6)以便将晶片从其腔室卸载。

Description

连续热处理器布局
技术领域
本发明涉及一种制造半导体晶片的方法，尤其涉及一种用于制造半导体晶片的机器中的步进式过程，并且以美国临时申请序号no.60/578,506为基础，该申请于2004年6月10日提交并在此引入作为参考。
背景技术
当在电镀方法、印刷方法和焊球熔化方法期间形成半导体器件时，在半导体基板上形成焊料凸点。焊料熔化并结合至所连接的材料，所述材料可为导线和导体等。
在使用焊料的现有技术的制造方法中，使用沉积在端子和布线表面上的焊剂。焊剂通常覆盖所沉积的表面同时活化该表面以防止发生新的氧化。通常，焊料在所沉积的表面上熔化并分布在该表面的上方，并且在这个过程中，溶解一部分焊剂。焊剂的去除是现有技术所共有的一个问题。
本发明的一个目的是克服现有技术的这个缺点。
本发明的另一个目的是在半导体处理操作中省去焊剂的使用，从而省去焊剂涂覆、清洗和干燥的处理。
发明内容
本发明涉及一种在半导体材料上制造焊料凸点和焊点的方法。该方法包括使用其上具有六个位置或站的回转工作台。该工作台设置成能够旋转以将如半导体晶片之类的待处理材料设置于一系列位置处，并各自控制所述位置处的温度、压力和气氛。
在初始站处装载如半导体晶片之类的此类器件，为限定本发明，该初始站被指定为6#站。在该站处，将晶片或基板装载于其上并且封闭在处于环境大气压力下的、封闭气氛受控的壳体内。然后，利用充入的氮气来吹洗壳体或腔室以便保证在6#站处该腔室内的氧处于低水平。
将包含晶片或基板的板旋转至下一个位置或第一个随后的站，该位置或站被指定为1#站。在1#站处，腔室中的气氛为与氮气混合的甲酸蒸气。该腔室内的板上的晶片以受控方式通过对流和/或传导而被加热。根据用于晶片/半导体的特定进程的焊料的性质来控制与调节该1#站的处理温度。该腔室内的处理压力为大气压力。在1#站处，对晶片进行处理以便除去其表面水分、有机污染物、表面氧化物，并且对该晶片进行处理以便还形成处于固相或处于固液过渡相的金属间层。
因此，板上的晶片离开1#站，并通过使上面设置着板的工作台受控旋转而逐渐地旋转至随后的2#站。2#站中的气氛包含在大气压力下与氮气混合的甲酸蒸气。晶片或基板以受控方式通过对流和/或传导而被加热。在2#站处，熔化晶片或基板上的焊料。热处理还除去了表面氧化物并将焊料凸点或焊球内的分解的有机污染物驱动或推动至该熔化焊料的表面上。因此，在2#站处的处理就完成了金属间层的形成。
在连续热处理器的3#站处，通过传输工作台的旋转而传输至该站的晶片通过对流和/或传导被再次加热。在该位置处，腔室内的真空机构在该处提供真空或负压力环境。在该3#站处，未将其它材料加至晶片。在该特定站处的处理提供了真空，该真空在焊料处于熔化状态时将焊料凸点或焊球内的任何空隙或有机污染物清除。该过程在3#站处、在由真空机构产生压力差期间进行。
晶片或半导体元件随后在传输工作台上旋转至4#站，在该4#站处，环境大气压力由与氮气混合的甲酸蒸气形成。该晶片在其板上以受调节的方式通过对流和/或传导而被进一步加热。该站形成焊料凸点或焊球，从而修复可能已经由于在先前的3#站处空隙喷发而在该处变得粗糙的表面。
然后，晶片或半导体通过旋转工作台而连续地旋转传输至5#站。在5#站处，腔室内的环境气氛为纯氮气。晶片在其腔室或壳体内以严格受控的方式通过对流和/或传导而被冷却。在该5#站处，正在处理的晶片或半导体元件上的焊料在凸点或球中形成并且固化，并且提供用于实现这种固化的淬硬处理。5#站还控制包括凸点或球的焊料的晶粒形成。
这种晶片处理的连续热处理部分内的最后步骤在晶片顺序地旋转至6#站时进行，在该6#站处，将处理后的晶片或基板从其腔室卸载，然后将新的未处理的晶片或基板放置于腔室内的、目前为空的板上以便进一步顺序前进通过处理设备上的站1至站6。
各个特定站处的处理参数设定成用于覆盖所有特定的焊料，所述焊料可包括高铅的、易熔的和无铅的焊料。
1#站：温度为100-350摄氏度，压力为760托，时间为1-300秒之间，环境为favn(甲酸蒸气和氮气)或氮气。
2#站：温度为200-400摄氏度，压力为760托，时间为1-300秒，环境为favn或氮气。
3#站：温度为200-400摄氏度，压力为小于1托，时间为1-300秒之间，环境为无任何气体。
4#站：温度为100-400摄氏度，压力为760托，时间为1-300秒之间，环境为favn或氮气。
5#站：温度为20-400摄氏度，压力为760托，时间为1-300秒，环境为氮气。
6#站：温度为20-30摄氏度，压力为760托，时间为1-300秒，环境为空气和/或氮气。
高铅的、易熔的及无铅的焊料的回流包括一种甲酸的处理，其中晶片构造通过在大气压力下在特定站处将甲酸引入腔室中而进行处理。在表面氧化物已经还原并且焊料已熔化后，通过应用真空来在焊料回流期间除去或尽量减少焊料内部的空隙。
焊料回流在半导体制造过程中很重要。这种回流实现了焊料凸点或焊球上的表面氧化物的还原。它帮助形成金属间层，除去或尽量减少焊料凸点或焊球内的空隙，该过程形成焊料性质的混合物(solder aloid compounds)，并且容许在半导体晶片材料上完成有光泽的、球形的焊料凸点或焊球。
现有技术的机器通常为焊剂分配器、回流炉和焊剂冲洗机。每种特定的焊料材料均需要使用不同的焊剂和不同的焊剂冲洗化学品(flux washingchemistry)。由于这些材料和化学品的性质，现有技术的机器必须设计成适合于特定的材料和特定的化学品。由于现有技术中使用的焊剂的性质，所述焊剂粘附于处理设备上并使得设备很难清洁。使用焊剂需要大量的化学品消耗并且需要对制造过程进行大量维护工作。在现有技术中，使用真空系统来加热焊料，注射甲酸以及尽量减少空隙并且还形成焊料凸点或焊球。由于利用真空系统进行焊料回流，所以就存在有若干缺点，如缺少传热介质。焊料的传热系数很低，并且可以使用低浓度的甲酸来还原表面氧化物，并且可以使用无对流传热来形成焊料凸点或焊球。
然而，本发明只需要一种化学品，如甲酸，来有效地还原铅、锡、铜和银的表面氧化物。也可利用甲酸来还原高铅焊料的表面氧化物，如铅锡化合物、易熔的焊料和无铅的焊料以及银、锡、或银与铜的化合物的表面氧化物。
通过使用如用于本发明的多腔室机器，可以容易地实现去除表面上的水分。可以实现去除表面氧化物或使焊料凸点或焊球内部的空隙最少化。因此，允许在如本发明的多站式旋转机器中形成金属间层和有光泽的光滑焊料凸点或焊球。在大气压力下应用甲酸，就可得到用于氧化物还原过程的大量甲酸分子。
通过在大气压力下应用甲酸，用于输送化学品的机械系统就既简单又可控制。由于使用大气压力，加热系统就能够允许对该加热系统上的晶片或半导体进行均匀、可控的加热。在大气压力下，能更加有效地从加热系统向焊料传热。因为现代的半导体制造中的晶片尺寸大得多并且系统需求高得多，所以这点特别有用。
因为可以更加有效地实现加热或冷却的传导，所以当在大气压力下进行时，焊料凸点或焊球的形成就以得到改善的方式形成。在大气压力下对焊料凸点或焊球进行初始加热和冷却，并且随后进行加热以及在高温下应用真空，就使得空隙内部的压力能将那些空隙拉至表面。然后，能容易地除去所述空隙。
附图说明
当结合以下附图观察时，本发明的目的和优点将会变得更加清楚，其中：
图1为用于处理晶片和半导体材料的连续热处理机器的俯视图。
具体实施方式
本发明包括一种连续热处理布局10，其使用通过处理器布局10中的一系列六个站腔室连续地处理由半导体材料制成的晶片“W”的方法。该方法包括一个或多个以下步骤：(1)将晶片装载入处于大气压力下的可旋转工作台12上的6#初始站处的腔室中，随后利用氮气吹洗(purge)6#腔室；(2)将处理器10中的晶片旋转至处理器10中的第一个随后的1#站腔室，将甲酸蒸气和氮气引入1#站腔室中，并在该站腔室中在环境大气压力下加热晶片；(3)将晶片旋转至处理器10中的第二个随后的2#站腔室，将甲酸蒸气和氮气引入，并在该2#站腔室中在环境大气压力下加热晶片；(4)将晶片旋转至处理器10中的第三个随后的3#站腔室，将真空引入到用于保持晶片的3#腔室，并且在处理器10的该3#站腔室中没有化学处理的情况下加热晶片；(5)将晶片旋转至处理器10中的第四个随后的4#站腔室，将甲酸蒸气和氮气引入该站处的腔室中，并在该站处的该腔室中在环境大气压力下加热晶片；(6)将晶片旋转至处理器10中的第五个随后的5#站腔室，将氮气引入该5#站腔室，在该站腔室中在环境大气压力下冷却晶片；以及(7)将晶片旋转回到最后一个或第六个随后的最初装载该晶片的6#站，然而现在将晶片从该6#站腔室卸载并再将新的晶片装载于其中。
本发明还包括在最后一个或第六个站处将连续的晶片“W′”装载入腔室中以便随后对其进行处理。
本发明还可包括用于半导体元件的连续热处理布局，包括以下步骤：在环境气氛下在受控的腔室中利用甲酸蒸气处理半导体；以及将甲酸蒸气与氮气混合。

Claims (4)

1.一种用于在处理器中处理由半导体材料构成的晶片的连续热处理布局，包括以下步骤：
将所述晶片装载入处于大气压力下的可旋转工作台上的、所述处理器的初始站处的腔室中，并利用氮气吹洗所述腔室；
将所述晶片旋转至第一个随后的站，将甲酸蒸气和氮气引入，并在环境大气压力下加热所述晶片；
将所述晶片旋转至第二个随后的站，将甲酸蒸气和氮气引入，并在环境大气压力下加热所述晶片；
将所述晶片旋转至第三个随后的站，将真空引入到所述晶片上，并在没有化学处理的情况下加热所述晶片；
将所述晶片旋转至第四个随后的站，将甲酸蒸气和氮气引入，并在环境大气压力下加热所述晶片；
将所述晶片旋转至第五个随后的站，将氮气引入，并在环境大气压力下冷却所述晶片；以及
将所述晶片旋转至最后一个或第六个随后的站，以便将所述晶片从所述腔室卸载。
2.根据权利要求1所述的连续热处理布局，包括以下步骤：
将连续的晶片装载入所述最后一个或第六个站中以便随后对其进行处理。
3.一种用于半导体元件的连续热处理布局，包括以下步骤：
在环境气氛下在受控的腔室中利用甲酸蒸气处理半导体。
4.根据权利要求3所述的连续热处理布局，包括：
将所述甲酸蒸气与氮气混合。
CNA2005800271479A 2004-06-10 2005-06-09 连续热处理器布局 Pending CN101160647A (zh)

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