CN101159225A - Method for measuring liquid film thickness of electrically-conductive backing plate - Google Patents
Method for measuring liquid film thickness of electrically-conductive backing plate Download PDFInfo
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- CN101159225A CN101159225A CNA2007100479001A CN200710047900A CN101159225A CN 101159225 A CN101159225 A CN 101159225A CN A2007100479001 A CNA2007100479001 A CN A2007100479001A CN 200710047900 A CN200710047900 A CN 200710047900A CN 101159225 A CN101159225 A CN 101159225A
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Abstract
The invention provides a method for measuring thickness of a liquid membrane on a conductive substrate. The method comprises providing a circuit having a DC source, a first conductive probe and a second conductive probe, and a micro-resistance galvanometer connected with the two conductive probes; providing a micro-step director for fixing the first conductive probe on the liquid membrane and connecting the second conductive probe with the conductive substrate; adjusting the micro-step director to make the first conductive probe move towards the liquid membrane, observing the reading of the micro-resistance galvanometer, and recording the first scale of the micro-step director when the reading begins to be larger than zero; continuously adjusting the micro-step director to make the first conductive probe keep moving downwards, and recording the second scale of the micro-step director when the reading of the micro-resistance galvanometer changes big abruptly; and recording the difference between the first and the second scales of the micro-step director to obtain the thickness of the liquid membrane. Compared with the prior art, the measuring method provided in the invention is simple, can directly measure the thickness of the liquid membrane, and can achieve the liquid membrane with micrometer-level thickness.
Description
Technical field
The present invention relates to electronic device and make the method for measurement of electrically-conductive backing plate upper film thickness in the field, specifically, relate to a kind of method of measurement of liquid film thickness of electrically-conductive backing plate.
Background technology
Along with the miniaturization development of electronic device, the size of each several part is more and more littler on the electronic device.In order to realize accurate control, need accurately control and optimize every technological parameter to the every performance of electronic device.In sub-micro technology, particularly below the 90nm processing procedure, in the cleaning that electronic device is made, spray and remain in acid solution on the electrically-conductive backing plate or the thickness of deionized water is an important parameters to follow-up flushing and drying process.If these cleanings are optimized, need to understand the thickness that sprays that get on and liquid film that left behind (acid solution, deionized water etc.).But because the very thin thickness of liquid film, especially enter micron-sized thickness after, adopt conventional method of measurement can't measure its concrete thickness.Therefore, providing the effective method of measurement of a kind of precision is the technical problem of the solution of demanding urgently.
Summary of the invention
The technical problem that the present invention solves be to provide a kind of can the easy method that liquid film thickness of electrically-conductive backing plate is measured.
For solving the problems of the technologies described above, the invention provides a kind of new method of measurement.This method of measurement comprises: provide a circuit, little resistor current meter that this circuit has DC power supply, first, second two conducting probes and connects two conducting probes; Provide a micro-stepping to advance controller first conducting probe is fixed on the liquid film top, controller is advanced in the adjusting micro-stepping can make first conducting probe move towards liquid film, and second conducting probe is connected on the electrically-conductive backing plate; Regulate micro-stepping and advance controller, first conducting probe is moved to liquid film, observe the reading of little resistor current meter, when reading begins greater than zero the time, first scale of controller is advanced in record micro-stepping this moment; Continue to regulate micro-stepping and advance controller, make first conducting probe continue to move down, when the reading of little resistor current meter became big suddenly, second scale of controller was advanced in record micro-stepping this moment; The difference that first, second scale of controller is advanced in described micro-stepping is exactly the thickness of liquid film.
Further, when being nonconducting liquid for liquid film, this method of measurement also comprises the electrolytical step of adding in liquid film.
Compared with prior art, method of measurement provided by the invention is utilized the easy circuit of framework, advances controller control conducting probe by micro-stepping and moves, and changes starting point and the terminating point of judging conducting probe contact liquid film by electric current, thereby calculates the thickness of liquid film.
Description of drawings
Fig. 1 is the structure chart of method of measurement use circuit of the present invention, and wherein conducting probe does not contact with liquid film.
Fig. 2 is the structure chart of method of measurement use circuit of the present invention, and wherein conducting probe just contacts with liquid film.
Fig. 3 is the structure chart of method of measurement use circuit of the present invention, and wherein conducting probe contacts with electrically-conductive backing plate.
Embodiment
Be described below in conjunction with the preferred embodiment of accompanying drawing, in the hope of purpose, specific structural features and the advantage of further understanding its invention method of measurement of the present invention.
See also Fig. 1, the method that liquid film thickness of electrically-conductive backing plate is measured provided by the invention needs a circuit 1.This circuit 1 has DC power supply 2, two conducting probe T1, T2, connection two conducting probe T1, T2 and can detect little resistance galvanometer 3 that circuit 1 Weak current changes.Wherein conducting probe T1 advances controller by micro-stepping and fixes, and regulates micro-stepping and advance controller and can make conducting probe T1 towards liquid film 5 minute movement; Conducting probe T2 then is connected on the electrically-conductive backing plate 6.What deserves to be explained is that controller is advanced in the micro-stepping of described fixedly conducting probe T1 not only can make conducting probe T1 carry out micron-sized moving, and also can carry out moving of more high-precision level of confidentiality.In the present embodiment, this stepping controller adopts is one and can realizes that micron order moves the micrometer caliper 4 of conducting probe T1.
Conducting probe T1 shown in Figure 1 is positioned at the top of liquid film 5, does not have contact liq, and this moment, circuit 1 was an open circuit, and the reading of little resistance galvanometer 3 is 0.Method of measurement of the present invention is: adjustable screw mircrometer gauge 4, make conducting probe T1 slowly near liquid film 5, when conducting probe T1 contact liquid film 5 when state (shown in Figure 2), circuit 1 forms path, little resistance galvanometer 3 begins that reading is arranged, and writes down the scale X1 of micrometer caliper 4 this moment; Continue adjustable screw mircrometer gauge 4, make conducting probe T1 continue to move down, when conducting probe T1 contacts with substrate 6 when state (shown in Figure 3), T2 electrically connects with conducting probe, electric current in the circuit 1 can become big suddenly, writes down the scale X2 of micrometer caliper 4 this moment.The distance that conducting probe T1 moves i.e. the difference of two scales | and X2-X1| is exactly the thickness of liquid film 5.
In addition, if the liquid film on the electrically-conductive backing plate is non-conductive liquid such as ultrapure deionized water, adopt method of measurement of the present invention before, also need in advance some electrolyte of dissolving in liquid film, to increase the conductivity of liquid film.
Method of measurement of the present invention judges that according to the size of electric current conducting probe contacts the starting point and the terminating point of liquid film by the simple circuit of design, and conducting probe is exactly the thickness of liquid film in the scale difference of this two positions.This method of measurement is simple, has realized the measurement of micron order thickness of liquid film.
Foregoing description; only being the specific descriptions to preferred embodiment of the present invention, is not to any qualification of the present invention, for the person of ordinary skill of the art; can carry out simple modification, interpolation, conversion according to above-mentioned disclosure, and all belong to the content of protecting in claims.
Claims (3)
1. the method for measurement of a liquid film thickness of electrically-conductive backing plate is characterized in that, this method of measurement comprises the steps:
Provide a circuit, little resistor current meter that this circuit has DC power supply, first, second two conducting probes and connects two conducting probes;
Provide a micro-stepping to advance controller, it is fixed on the liquid film top with first conducting probe, and controller is advanced in the adjusting micro-stepping can make first conducting probe move towards liquid film, and second conducting probe is connected on the electrically-conductive backing plate;
Regulate micro-stepping and advance controller, first conducting probe is moved to liquid film, observe the reading of little resistor current meter, when reading begins greater than zero the time, first scale of controller is advanced in record micro-stepping this moment;
Continue to regulate micro-stepping and advance controller, make first conducting probe continue to move down, when the reading of little resistor current meter became big suddenly, second scale of controller was advanced in record micro-stepping this moment;
The difference of first, second scale of record is exactly the thickness of liquid film.
2. method of measurement as claimed in claim 1 is characterized in that: it is micrometer caliper that controller is advanced in described micro-stepping.
3. method of measurement as claimed in claim 1 is characterized in that: this method of measurement adds electrolyte before also being included in first conducting probe contact liquid film in liquid film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100479001A CN101159225A (en) | 2007-11-07 | 2007-11-07 | Method for measuring liquid film thickness of electrically-conductive backing plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100479001A CN101159225A (en) | 2007-11-07 | 2007-11-07 | Method for measuring liquid film thickness of electrically-conductive backing plate |
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| CN101159225A true CN101159225A (en) | 2008-04-09 |
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| CNA2007100479001A Pending CN101159225A (en) | 2007-11-07 | 2007-11-07 | Method for measuring liquid film thickness of electrically-conductive backing plate |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102175130A (en) * | 2011-03-03 | 2011-09-07 | 中国石油大学(华东) | Real-time measuring device and measuring method for thickness of gas-containing liquid film in interface fluctuation |
| CN102997832A (en) * | 2011-09-15 | 2013-03-27 | 上海宝钢工业检测公司 | Automatic measuring system for tin plate surface oxide film coatings |
| CN103267488A (en) * | 2013-06-03 | 2013-08-28 | 北京科技大学 | Device for measuring thickness of thin liquid film |
| CN103868444A (en) * | 2012-12-07 | 2014-06-18 | 台积太阳能股份有限公司 | Rapid analysis of buffer layer thickness for thin film solar cells |
| CN104748643A (en) * | 2015-01-23 | 2015-07-01 | 中石化石油工程技术服务有限公司 | Metal surface liquid-state film layer measuring device and measuring method thereof |
| CN105091843A (en) * | 2015-06-25 | 2015-11-25 | 深圳市华星光电技术有限公司 | Method for measuring film contraction |
| CN105466326A (en) * | 2015-12-16 | 2016-04-06 | 榆林学院 | Experiment apparatus and measure method for measuring change of liquid film thickness with time by using conductance probe |
| CN106500583A (en) * | 2016-11-28 | 2017-03-15 | 西北工业大学 | The adherent liquid film morphometry system of internal face of combustion chamber |
| CN107192325A (en) * | 2017-04-10 | 2017-09-22 | 天津大学 | The direct measuring method of annular flow local dynamic station liquid film average thickness |
| CN107356178A (en) * | 2017-06-13 | 2017-11-17 | 中国科学院力学研究所 | The caliberating device of hypersonic overflow liquid film cooling film thickness measuring probe |
| CN113063341A (en) * | 2021-03-05 | 2021-07-02 | 中国石油天然气集团有限公司 | Three-dimensional real-time measurement device and method for thickness and interfacial wave of annular flow flowing liquid film |
-
2007
- 2007-11-07 CN CNA2007100479001A patent/CN101159225A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102175130B (en) * | 2011-03-03 | 2012-09-19 | 中国石油大学(华东) | Real-time measuring device and measuring method for thickness of gas-containing liquid film in interface fluctuation |
| CN102175130A (en) * | 2011-03-03 | 2011-09-07 | 中国石油大学(华东) | Real-time measuring device and measuring method for thickness of gas-containing liquid film in interface fluctuation |
| CN102997832A (en) * | 2011-09-15 | 2013-03-27 | 上海宝钢工业检测公司 | Automatic measuring system for tin plate surface oxide film coatings |
| US9689912B2 (en) | 2012-12-07 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rapid analysis of buffer layer thickness for thin film solar cells |
| CN103868444A (en) * | 2012-12-07 | 2014-06-18 | 台积太阳能股份有限公司 | Rapid analysis of buffer layer thickness for thin film solar cells |
| CN103267488A (en) * | 2013-06-03 | 2013-08-28 | 北京科技大学 | Device for measuring thickness of thin liquid film |
| CN104748643A (en) * | 2015-01-23 | 2015-07-01 | 中石化石油工程技术服务有限公司 | Metal surface liquid-state film layer measuring device and measuring method thereof |
| CN105091843B (en) * | 2015-06-25 | 2018-01-23 | 深圳市华星光电技术有限公司 | A kind of method for measuring film contracting |
| CN105091843A (en) * | 2015-06-25 | 2015-11-25 | 深圳市华星光电技术有限公司 | Method for measuring film contraction |
| CN105466326A (en) * | 2015-12-16 | 2016-04-06 | 榆林学院 | Experiment apparatus and measure method for measuring change of liquid film thickness with time by using conductance probe |
| CN105466326B (en) * | 2015-12-16 | 2018-05-15 | 桂林航天工业学院 | A kind of experimental provision changed over time using conducting probe measurement thickness of liquid film and measuring method |
| CN106500583A (en) * | 2016-11-28 | 2017-03-15 | 西北工业大学 | The adherent liquid film morphometry system of internal face of combustion chamber |
| CN106500583B (en) * | 2016-11-28 | 2019-02-15 | 西北工业大学 | The adherent liquid film morphometry system of internal face of combustion chamber |
| CN107192325A (en) * | 2017-04-10 | 2017-09-22 | 天津大学 | The direct measuring method of annular flow local dynamic station liquid film average thickness |
| CN107192325B (en) * | 2017-04-10 | 2019-11-01 | 天津大学 | The direct measuring method of annular flow local dynamic station liquid film average thickness |
| CN107356178A (en) * | 2017-06-13 | 2017-11-17 | 中国科学院力学研究所 | The caliberating device of hypersonic overflow liquid film cooling film thickness measuring probe |
| CN107356178B (en) * | 2017-06-13 | 2019-10-29 | 中国科学院力学研究所 | The caliberating device of hypersonic overflow liquid film cooling film thickness measuring probe |
| CN113063341A (en) * | 2021-03-05 | 2021-07-02 | 中国石油天然气集团有限公司 | Three-dimensional real-time measurement device and method for thickness and interfacial wave of annular flow flowing liquid film |
| CN113063341B (en) * | 2021-03-05 | 2023-08-22 | 中国石油天然气集团有限公司 | Device and method for three-dimensional real-time measurement of thickness of annular flow liquid film and interfacial wave |
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Open date: 20080409 |