CN101145514B - Method of forming fine pattern of semiconductor device - Google Patents
Method of forming fine pattern of semiconductor device Download PDFInfo
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- CN101145514B CN101145514B CN2007101301538A CN200710130153A CN101145514B CN 101145514 B CN101145514 B CN 101145514B CN 2007101301538 A CN2007101301538 A CN 2007101301538A CN 200710130153 A CN200710130153 A CN 200710130153A CN 101145514 B CN101145514 B CN 101145514B
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- 238000000034 method Methods 0.000 title claims abstract description 76
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 97
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 40
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- -1 enanthol Chemical compound 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 10
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 8
- 239000004593 Epoxy Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 150000003254 radicals Chemical class 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 5
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 claims description 4
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 claims description 4
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 claims description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 claims description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 5
- 238000004132 cross linking Methods 0.000 abstract description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 12
- 239000002253 acid Substances 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 8
- 150000007942 carboxylates Chemical class 0.000 description 6
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N methyl alcohol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- FDYDISGSYGFRJM-UHFFFAOYSA-N (2-methyl-2-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC1C(OC(=O)C(=C)C)(C)C2C3 FDYDISGSYGFRJM-UHFFFAOYSA-N 0.000 description 2
- YXEBFFWTZWGHEY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohex-3-en-1-yl]methanol Chemical compound OCC1(CO)CCC=CC1 YXEBFFWTZWGHEY-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 235000015110 jellies Nutrition 0.000 description 2
- 239000008274 jelly Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- CVBASHMCALKFME-UHFFFAOYSA-N (4-methoxyphenyl)-diphenylsulfanium Chemical compound C1=CC(OC)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 CVBASHMCALKFME-UHFFFAOYSA-N 0.000 description 1
- RCOCMILJXXUEHU-UHFFFAOYSA-N (4-methylphenyl)-diphenylsulfanium Chemical compound C1=CC(C)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 RCOCMILJXXUEHU-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- RVOWBUHHAGFJPC-UHFFFAOYSA-N dibutyl(naphthalen-1-yl)sulfanium Chemical compound C1=CC=C2C([S+](CCCC)CCCC)=CC=CC2=C1 RVOWBUHHAGFJPC-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical class COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 125000000612 phthaloyl group Chemical group C(C=1C(C(=O)*)=CC=CC1)(=O)* 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention discloses a method for forming a fine pattern of a semiconductor device comprising: forming a first photoresist pattern over a semiconductor substrate including an underlying layer. A cross-linking layer is formed on the sidewall of the first photoresist pattern. The first photoresist pattern is removed to form a fine pattern including a silicon polymer. A second photoresist pattern is formed that is coupled to the fine pattern. The underlying layer is etched using the fine pattern and the second photoresist pattern as an etching mask. As a result, the fine pattern has a smaller size than a minimum pitch.
Description
Technical field
Present invention relates in general to form the method that has above the delicate pattern of semi-conductor device of the spacing of the photoetching process limit.
Background technology
Because such as popularizing of information mediums such as computer, semiconductor device art has obtained progress apace.Semiconductor device must high speed operation and is had high memory capacity.Therefore, the manufacturing technology of semiconductor device must produce have improved integrated level, the high-capacity storage device of reliability and data read feature.
In order to improve the integrated level of device, developed the photoetching technique that is used to form fine pattern.Photoetching technique comprise use such as ArF (193nm) and VUV (157nm) chemical amplification type deep UV (DUV) light source exposure technique and will be fit to the technology that the photoresist material of exposure light source develops.
The processing speed of semiconductor device depends on the live width of pattern.For example, when reducing pattern line-width, just can increase processing speed, thereby improve device performance.Therefore, the critical dimension according to the size of semiconductor device control pattern line-width is very important.
As the alternative method to development photoresist agent material, a kind of like this method has been used for present semiconductor device manufacturing process, and this method utilizes double exposure and etching work procedure to form the fine pattern that live width reduces.
Utilize the double exposure operation to form the conventional method of the fine pattern of semiconductor device below with reference to Fig. 1 explanation.
On semiconductor substrate, form basic unit and hard mask film.Carry out first photo-mask process to form the first photoresist pattern 11, wherein the line on unit area (cell region)/be connected with circuit pattern on the neighboring area with bridge columnar structure apart from pattern.Carry out second photo-mask process to form the second photoresist pattern 13, wherein as shown in Figure 1, the line on the unit area/be connected with circuit pattern on the neighboring area with bridge columnar structure apart from pattern.In the unit area, the first photoresist pattern 11 and the second photoresist pattern 13 are arranged alternately.
Yet, owing to be subjected to the resolution limit of lithographic equipment, control unit zone
In the covering uniformity and to form size be difficult less than the pattern of minimum spacing.
Summary of the invention
Various different embodiment of the present invention aim to provide the method for the fine pattern that forms semiconductor device.
According to one embodiment of present invention, the method that is used to form the fine pattern of semiconductor device comprises: form first photoresist (or being called photoresistance) pattern on the unit area of the semiconductor substrate that comprises basic unit.On the first photoresist pattern and semiconductor substrate, form the silicon-containing polymer layer, to form resulting structure.Resulting structure is exposed and toast, so that the cross-linked layer of formation at the interface between the first photoresist pattern and silicon-containing polymer layer.To and toast resulting structure and develop through exposure, thereby on the sidewall of the first photoresist pattern, form cross-linked layer with constant thickness.Etching is formed at the cross-linked layer on the top of the first photoresist pattern, till expose at the top of the first photoresist pattern.Remove the first photoresist pattern that exposes, on the unit area, to form the fine pattern that comprises cross-linked layer.In the outer peripheral areas of semiconductor substrate but not form the second photoresist pattern that is connected with fine pattern on the unit area.Utilize the fine pattern and the second photoresist pattern to make basic unit's patterning, to form basic unit's pattern as etching mask.
In one embodiment, the method that is used to form the fine pattern of semiconductor device comprises: form hard mask film comprising on the semiconductor substrate of basic unit.On the unit area of hard mask film, form the first photoresist pattern.On the sidewall of the first photoresist pattern, form first cross-linked layer.Remove the first photoresist pattern then, comprise first fine pattern of first cross-linked layer with formation.Utilize first fine pattern to make the hard mask film patterning, to form the hard mask film pattern as etching mask.Form the second photoresist pattern between the hard mask film pattern in the unit area.On the sidewall of the second photoresist pattern, form second cross-linked layer.Remove the second photoresist pattern then, comprise second fine pattern of second cross-linked layer with formation.Form the 3rd photoresist pattern that is connected with hard mask pattern with second fine pattern on the outer peripheral areas of semiconductor substrate but not on the unit area.Utilize hard mask pattern, second fine pattern and the 3rd photoresist pattern to make basic unit's patterning, to form basic unit's pattern as etching mask.
Silicon-containing polymer contains epoxy radicals as crosslinkable functionality.Particularly, infiltrate in the silicon-containing polymer layer, and make the bonding fracture of epoxy radicals by the acid of exposure process from the first photoresist pattern generating.In roasting procedure, the end of the separation epoxy radicals in the silicon-containing polymer and the hydroxyl of photoresist material are crosslinked.In follow-up developing procedure, remove the silicon-containing polymer that in the forming process of cross-linked layer, is not related to, and on the photoresist pattern, form and the crosslinked cross-linked layer of photoresist pattern.
Description of drawings
Fig. 1 is the plane graph that the method for the fine pattern that forms semiconductor device is shown.
Fig. 2 a to 2g is sectional view and the plane graph that illustrates according to the method for the formation delicate pattern of semi-conductor device of the embodiment of the invention.
Embodiment
Describe the present invention below with reference to the accompanying drawings in detail.
Fig. 2 a to 2g is the schematic diagram that illustrates according to the method for the formation delicate pattern of semi-conductor device of the embodiment of the invention.
Fig. 2 a to 2d illustrates the plane graph of pattern one side and along the line of Fig. 2 a
Another view of the pattern of intercepting.Fig. 2 e and 2f are the lines that illustrates from Fig. 2 a
The schematic diagram of observed cross section.Fig. 2 g is the plane graph that two patterns with bridge columnar structure that obtain by photo-mask process are shown.
Fig. 2 a illustrates the basic unit 23 that is formed on the semiconductor substrate 21.Basic unit 23 comprises the conductive layer that is used to be staggered to form bridge shape pattern.Particularly, basic unit 23 can be by polysilicon or the formed word line of metal level, bit line, metal wire or its combination.
The first photoresist film (not shown) is coated in the basic unit 23.Utilizing exposed mask to carry out exposure and developing procedure on photoresist film, is the first photoresist pattern 25 of W1 to form live width in the unit area.
First photoresist film comprises chemical amplification type photoresist polymer, photic acid producing agent and organic solvent.Can use any photoresist polymer, disclosed photoresist polymer in for example following patent: U.S. Patent No. 6,051,678 (on April 18th, 2000), No.6,132,926 (on October 17th, 2000), No.6,143,463 (on November 7th, 2000), No.6,150,069 (on November 21st, 2000), No.6,180,316 B1 (January 30 calendar year 2001), No.6,225,020 B1 (May 1 calendar year 2001), No.6,235,448 B1 (May 22 calendar year 2001), and No.6,235,447 B1 (May 22 calendar year 2001).Particularly, polymer can comprise one of following compounds: poly-(1-cyclohexene-1-tert-butyl group carboxylate/maleic anhydride/2-cyclohexene-1-alcohol); Poly-(1-cyclohexene-1-tert-butyl group carboxylate/maleic anhydride/3-cyclohexene-1-methyl alcohol); Poly-(1-cyclohexene-1-tert-butyl group carboxylate/maleic anhydride/3-cyclohexene-1,1-dimethanol); Poly-(3-cyclohexene-1-tert-butyl group carboxylate/maleic anhydride/2-cyclohexene-1-alcohol); Poly-(3-cyclohexene-1-tert-butyl group carboxylate/maleic anhydride/3-cyclohexene-1-methyl alcohol); Poly-(3-cyclohexene-1-ethoxycarbonyl propyl carboxylate/maleic anhydride/3-cyclohexene-1-methyl alcohol); Poly-(3-cyclohexene-1-tert-butyl group carboxylate/maleic anhydride/3-cyclohexene-1,1-dimethanol); Poly-(3-(5-dicyclo [2.2.1]-heptene-2-yl)-1,1,1-(trifluoromethyl) propan-2-ol/maleic anhydride/2-Methacryloyloxy-2-methyladamantane/methacrylic acid 2-hydroxyl ethyl ester); Poly-(3-(5-dicyclo [2.2.1]-heptene-2-yl)-1,1,1-(trifluoromethyl) propan-2-ol/maleic anhydride/2-Methacryloyloxy-2-methyladamantane/methacrylic acid 2-hydroxyl ethyl ester/norborene); Poly-(3-(5-dicyclo [2.2.1]-heptene-2-yl)-1,1,1-(trifluoromethyl) propan-2-ol/maleic anhydride/metering system tert-butyl acrylate/methacrylic acid 2-hydroxyl ethyl ester); Poly-(dicyclo [2.2.1] heptan-5-alkene-2-carboxylic acid tert-butyl ester/2-ethoxy dicyclo [2.2.1] heptan-5-alkene-2-carboxylate/dicyclo [2.2.1] heptan-5-alkene-2-carboxylic acid/maleic anhydride/2-ethoxy dicyclo [2.2.1] heptan-5-alkene-2-carboxylate); And poly-(dicyclo [2.2.1] heptan-5-alkene-2-carboxylic acid tert-butyl ester/2-ethoxy dicyclo [2.2.1] heptan-5-alkene-2-carboxylate/dicyclo [2.2.1] heptan-5-alkene-carboxylic acid/maleic anhydride/2-ethoxy dicyclo [2.2.2] suffering-t-alkene-2-carboxylate).Above-mentioned all cpds comprises the monomer that has hydroxyl separately, so that improve substrate attachment and cross-linking effect.
Can use any photic acid producing agent to produce acid by exposing.Photic acid producing agent can be one of in the following compounds: the phthaloyl imino trifluoro-methanyl sulfonate, toluenesulfonic acid dinitro benzyl ester, positive decyl two sulfones, naphthoyl imino group trifluoro-methanyl sulfonate, hexafluorophosphoric acid diphenyl iodine, hexafluoroarsenate diphenyl iodine, hexafluoro-antimonic acid diphenyl iodine, trifluoromethayl sulfonic acid diphenyl p-methoxyphenyl sulfonium, trifluoromethayl sulfonic acid diphenyl p-methylphenyl sulfonium, the trifluoromethayl sulfonic acid diphenyl is to the isobutyl phenenyl sulfonium, the hexafluoroarsenate triphenylmethyl methacrylate, the hexafluoro-antimonic acid triphenylmethyl methacrylate, the trifluoromethayl sulfonic acid triphenylsulfonium, or trifluoromethayl sulfonic acid dibutyl naphthyl sulfonium.
Photoresist polymer with 100 weight portions is a benchmark, and the content range of photic acid producing agent is 0.1 to 10 weight portion.When the content of photic acid producing agent during less than 0.1 weight portion, the photoetching jelly dies down to the sensitiveness of light.When the content of photic acid producing agent during greater than 10 weight portions, photic acid producing agent absorbs a large amount of far ultraviolet rays and produces a large amount of acid, thereby obtains to have the pattern of unfavorable cross section.
Organic solvent can comprise one of following compounds: diethylene glycol diethyl ether, 3-methoxypropionic acid methyl esters, 3-ethoxyl ethyl propionate, propylene glycol methyl ether acetate, cyclohexanone, 2-heptanone, and composition thereof.Photoresist polymer with 100 weight portions is a benchmark, and the content range of organic solvent is about 100 to 2000 weight portions, to obtain to have the photoresist film of the thickness of being wanted.
Fig. 2 b is illustrated in the resulting silicon-containing polymer layer 27 that applies on the structure of the first photoresist pattern 25 that comprises.
Silicon-containing polymer contain with the total polymer weight for the benchmark content range be the silicon molecule of about 10 to 40wt% (percentage by weights, as follows) and as the epoxy radicals of crosslinkable functionality.When the content of silicon molecule during, after comprehensive etching (blanket-etching) operation that photoresist pattern 25 tops are exposed, in cross-linked layer 29, can produce a large amount of holes less than 10wt%.When the content of silicon molecule during, be difficult on the first photoresist pattern, apply silicon-containing polymer layer 27 equably greater than 40wt%.
Can obtain the silicon-containing polymer layer in the following way: provide comprise silicon-containing polymer with such as C
7～C
10Alkane solvents or C
5～C
10The polymer composition of alcohols equal solvent, spin coating is also toasted this polymer composition.Particularly, silicon-containing polymer comprises polysiloxane compound, poly-silsesquioxane (polysilsesquioxane) compound or its mixture.
For example, C
7～C
10Alkane solvents be selected from heptane, octane, nonane, decane, and composition thereof the group that formed.C
5～C
10Alcohols be selected from amylalcohol, enanthol, octanol, nonyl alcohol, decyl alcohol, and composition thereof the group that formed.
Resulting structure is exposed and baking, so that the cross-linked layer of formation at the interface 29 between the first photoresist pattern and silicon-containing polymer layer.
The employing scope be 10 to 100 millijoule/square centimeters and preferably the exposure energy of 40 to 60 millijoule/square centimeters carry out exposure process.
The acid that produces from photoresist pattern 25 by exposure process makes the epoxy radicals bonding the silicon-containing polymer layer 27 rupture.In roasting procedure, hydroxyl contained in the end of the epoxy radicals of fracture and the photoresist polymer is crosslinked.
Can adjust the thickness of cross-linked layer 29 by baking condition.For example, when the temperature of roasting procedure in about 130 to 200 ℃ of scopes carried out, between photoresist pattern and silicon-containing polymer layer, form the width cross-linked layer 29 identical with the first photoresist pattern at the interface with thickness.
Resulting structure is developed, to remove not and the crosslinked silicon-containing polymer layer 27 of photoresist pattern.As a result, shown in Fig. 2 c, on the sidewall of the first photoresist pattern 25, form cross-linked layer 29.
In developing procedure, the wafer that is formed with fine pattern on it is immersed in the n-amyl alcohol about 50 to 70 seconds.
Fig. 2 d illustrates by carrying out comprehensive etching work procedure on the structure in Fig. 2 c to remove the structure that cross-linked layer 29 obtains till expose at the top of the first photoresist pattern 25.
Use fluorine-containing plasma etch gases to carry out this comprehensive etching work procedure.The example of plasma etch gases comprises CF
4, CHF
3, C
2F
6, C
3F
8, C
4F
8, and the combination.
Fig. 2 e is illustrated in and removes the structure of the first photoresist pattern 25 to be obtained after the reservation cross-linked layer 29 of exposing.As a result, the fine pattern that is made of cross-linked layer 29 is formed on the unit area of semiconductor substrate 21.Fine pattern has live width W2 (W1＞W2).
By means of using O
2With N
2The gas mixture atmosphere remove the first photoresist pattern 25.Particularly, use comprises O
2With N
2Etching gas remove the first photoresist pattern, O
2With N
2Flow-rate ratio (%) be O
2: N
2=1%: 99%-15%: 85%, O preferably
2: N
2=10%: 90%.
After removing the first photoresist pattern, this method can also comprise that wafer is immersed in the n-amyl alcohol about 50 to 70 seconds comes clean wafers.
Fig. 2 f is illustrated in second photoresist film 31 that applies on the resulting structure.The second photoetching jelly can comprise and the material identical materials that is used for first photoresist film.
Shown in Fig. 2 g, on second photoresist film 31, carry out exposure and developing procedure, with outer peripheral areas (
With
) but not the unit area
The last formation second photoresist pattern 31-1.
Use exposed mask to carry out exposure process, this exposed mask has the shielding cell in shielding cell zone and exposes the neighboring area but not the transmission units of unit area.The side of the second photoresist pattern 31-1 is connected on the side of cross-linked layer 29 formed fine patterns 29.As a result, form as shown in Figure 1 pattern alternately with bridge columnar structure.
In order to overcome because the restriction of the lithographic equipment of the current application that high integration caused of semiconductor device, use the fine pattern 29 of silicon-containing polymer 27 to be formed on the unit area (a), and the second photoresist pattern be formed at except that unit area (a) zone (b) and (c) on.Utilize fine pattern 29 on the unit area (a) and zone (b) and (c) on the second photoresist pattern 31 come etching basic unit 23 (not shown)s.As a result, basic unit's pattern (not shown) is arranged alternately with bridge shape form, to overcome the restriction of photo-mask process.
In one embodiment of the invention, the method that is used to form delicate pattern of semi-conductor device can comprise the operation shown in Fig. 2 a to 2e is carried out twice at least.
Particularly, comprising the amorphous carbon layer that forms on the semiconductor substrate of basic unit as the hard mask film (not shown).On the unit area of hard mask film, form the first photoresist pattern.On the sidewall of the first photoresist pattern, form first cross-linked layer.Remove the first photoresist pattern then, comprise first fine pattern of first cross-linked layer with formation.
Utilize first fine pattern to make the hard mask film patterning, to form the hard mask film pattern as etching mask.
Between the hard mask film pattern, form the second photoresist pattern.On the sidewall of the second photoresist pattern, form second cross-linked layer.Remove the second photoresist pattern then, comprise second fine pattern of second cross-linked layer with formation.In the outer peripheral areas of semiconductor substrate but not form the 3rd photoresist pattern that is connected with hard mask pattern with second fine pattern in the unit area.
The 3rd photoresist pattern forms by utilizing exposed mask, wherein, exposed mask has shaded areas that hard mask pattern wherein is connected with the 3rd photoresist pattern and the shaded areas that is connected with the 3rd photoresist pattern of second fine pattern wherein, perhaps by the exposed mask displacement of covering one of coupling part is formed.
Utilize hard mask pattern, second fine pattern and the 3rd photoresist pattern to make basic unit's patterning, to form basic unit's pattern as etching mask.
The above embodiment of the present invention is illustrative rather than restrictive.The various modes that substitute and be equal to all are feasible.The present invention is not limited to lithography step described herein, and the present invention also is not limited to the semiconductor device of any particular type.For example, the present invention can be applied in dynamic random access memory (DRAM) device or the nonvolatile semiconductor memory member.Obvious other increase, minimizing or modification as can be known all falls within the scope of the appended claims after reading disclosure of the present invention.
The application requires the priority of korean patent application No.10-2006-0087854 that submitted on September 12nd, 2006 and the korean patent application No.10-2007-0064136 that submitted on June 28th, 2007, and the full content of this korean patent application is incorporated this paper by reference into.
Claims (20)
1. method of patterning that forms semiconductor device, described method comprises:
On the unit area of the semiconductor substrate that comprises basic unit, form the first photoresist pattern;
By the silicon-containing polymer constituent being coated on described first photoresist pattern and the described basic unit to form the silicon-containing polymer layer, and on described silicon-containing polymer layer, carry out exposure process and roasting procedure, on the sidewall of the described first photoresist pattern, form cross-linked layer;
Remove the described first photoresist pattern, on described unit area, to form the pattern that comprises described cross-linked layer;
Form the second photoresist pattern that is connected with described pattern, the described second photoresist pattern is formed on the outer peripheral areas of described semiconductor substrate, but not on the described unit area; And
Utilize described pattern and the described second photoresist pattern to make described basic unit patterning as etching mask.
2. method according to claim 1, wherein,
Described basic unit is selected from a group, and described group comprises: word line, bit line, metal wire and combination thereof.
3. method according to claim 1, wherein,
Described silicon-containing polymer constituent comprises silicon-containing polymer and organic solvent;
The step that forms described cross-linked layer also comprises:
After described silicon-containing polymer layer is carried out exposure process and roasting procedure, remove all the other silicon-containing polymer layers that in the forming process of described cross-linked layer, do not related to; And
Comprehensive described cross-linked layer of etching is till expose at the top of the described first photoresist pattern.
4. method according to claim 3, wherein,
Described organic solvent comprises C
7-C
10Alkane solvents and C
5-C
10Alcohols.
5. method according to claim 4, wherein,
Described alkane solvents is selected from a group, and described group comprises: heptane, octane, nonane, decane, and composition thereof.
6. method according to claim 4, wherein,
Described alcohols is selected from a group, and described group comprises: amylalcohol, enanthol, octanol, nonyl alcohol, decyl alcohol, and composition thereof.
7. method according to claim 3, wherein,
Described silicon-containing polymer comprises that the total weight with described silicon-containing polymer is that the benchmark content range is the silicon of 10wt% to 40wt%.
8. method according to claim 3, wherein,
Described silicon-containing polymer comprises crosslinkable functionality.
9. method according to claim 8, wherein,
Described crosslinkable functionality is an epoxy radicals.
10. method according to claim 3, wherein,
Described silicon-containing polymer is polysiloxane compound, poly-silsesquioxane compound or its mixture.
11. method according to claim 1, wherein,
Described roasting procedure carries out can making under the described cross-linked layer thickness even temperature.
12. method according to claim 11, wherein,
Described roasting procedure carries out under the temperature of from 130 to 200 ℃ of scopes.
13. method according to claim 3, wherein,
The step of the described cross-linked layer of etching utilizes fluorine-containing etching gas to carry out comprehensively.
14. method according to claim 13, wherein,
Described etching gas is selected from a group, and described group comprises: CF
4, CHF
3, C
2F
6, C
3F
8, C
4F
8, and the combination.
15. method according to claim 1, wherein,
The step utilization of removing the described first photoresist pattern comprises oxygen to be carried out with the etching gas that mixes of nitrogen, and the flow-rate ratio of oxygen and nitrogen is O
2: N
2=1%: 99%-15%: 85%.
16. method according to claim 1 also comprises:
After removing described photoresist pattern, wafer is soaked in the n-amyl alcohol solution.
17. a method of patterning that forms semiconductor device, described method comprises:
Form hard mask film comprising on the semiconductor substrate of basic unit;
On the unit area of described hard mask film, form the first photoresist pattern;
By the silicon-containing polymer constituent being coated on described first photoresist pattern and the described hard mask film to form the silicon-containing polymer layer, and on described silicon-containing polymer layer, carry out exposure process and roasting procedure, on the sidewall of the described first photoresist pattern, form first cross-linked layer;
Remove the described first photoresist pattern, comprise first pattern of described first cross-linked layer with formation;
Utilize described first pattern to make described hard mask film patterning as etching mask;
Between described hard mask film pattern, form the second photoresist pattern;
By the silicon-containing polymer constituent being coated on the described second photoresist pattern to form the silicon-containing polymer layer, and on described silicon-containing polymer layer, carry out exposure process and roasting procedure, on the sidewall of the described second photoresist pattern, form second cross-linked layer;
Remove the second photoresist pattern, comprise second pattern of described second cross-linked layer with formation;
In outer peripheral areas, form the 3rd photoresist pattern that is connected with described hard mask pattern with described second pattern; And
Utilize described hard mask pattern, described second pattern and described the 3rd photoresist pattern to make described basic unit patterning, to form basic unit's pattern as etching mask.
18. method according to claim 17, wherein,
Described hard mask film comprises amorphous carbon layer.
19. method according to claim 17, wherein,
Described silicon-containing polymer constituent comprises silicon-containing polymer and organic solvent;
The step that forms described first cross-linked layer also comprises:
After carrying out exposure process and roasting procedure, remove all the other silicon-containing polymer layers that in the forming process of described first cross-linked layer, do not related to; And
Comprehensive described first cross-linked layer of etching is till expose at the top of the described first photoresist pattern.
20. method according to claim 17, wherein,
Described silicon-containing polymer constituent comprises silicon-containing polymer and organic solvent;
The step that forms described second cross-linked layer also comprises:
After carrying out exposure process and roasting procedure, remove all the other silicon-containing polymer layers that in the forming process of described second cross-linked layer, do not related to; And
Comprehensive described second cross-linked layer of etching is till expose at the top of the described second photoresist pattern.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0087854 | 2006-09-12 | ||
| KR20060087854 | 2006-09-12 | ||
| KR1020060087854 | 2006-09-12 | ||
| KR1020070064136 | 2007-06-28 | ||
| KR1020070064136A KR100861172B1 (en) | 2006-09-12 | 2007-06-28 | Method for Forming Fine Patterns of Semiconductor Devices |
| KR10-2007-0064136 | 2007-06-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101145514A CN101145514A (en) | 2008-03-19 |
| CN101145514B true CN101145514B (en) | 2011-07-06 |
Family
ID=39207929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101301538A Expired - Fee Related CN101145514B (en) | 2006-09-12 | 2007-07-20 | Method of forming fine pattern of semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100861172B1 (en) |
| CN (1) | CN101145514B (en) |
| TW (1) | TWI353626B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101439394B1 (en) | 2008-05-02 | 2014-09-15 | 삼성전자주식회사 | Method for forming fine patterns by double patterning process using acid diffusion |
| KR100953036B1 (en) * | 2008-05-26 | 2010-04-14 | 주식회사 하이닉스반도체 | Method for forming fine patterns of a semiconductor device |
| CN101685765B (en) * | 2008-09-25 | 2011-04-20 | 南亚科技股份有限公司 | Method for manufacturing element pattern |
| JP5240297B2 (en) * | 2008-12-26 | 2013-07-17 | 富士通株式会社 | Pattern forming method, semiconductor device manufacturing method, and resist pattern coating layer forming material |
| CN102023476B (en) * | 2009-09-15 | 2013-06-12 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor photoetching process method for forming micro-sized structure |
| JP5871720B2 (en) * | 2011-06-16 | 2016-03-01 | 株式会社ダイセル | Solvent for printing or solvent composition |
| CN104425225A (en) * | 2013-09-04 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Forming method for triple graphs |
| KR102377568B1 (en) * | 2015-11-27 | 2022-03-22 | 에스케이하이닉스 주식회사 | Method for forming fine pattern including line portion and pad portion |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0140485B1 (en) * | 1994-12-27 | 1998-07-15 | 김주용 | A method manufacturing fine pattern of semiconductor device |
| JP3924910B2 (en) | 1998-03-31 | 2007-06-06 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| JP2004179254A (en) * | 2002-11-25 | 2004-06-24 | Renesas Technology Corp | Method for manufacturing semiconductor device |
-
2007
- 2007-06-28 KR KR1020070064136A patent/KR100861172B1/en not_active IP Right Cessation
- 2007-07-13 TW TW096125545A patent/TWI353626B/en not_active IP Right Cessation
- 2007-07-20 CN CN2007101301538A patent/CN101145514B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWI353626B (en) | 2011-12-01 |
| TW200814145A (en) | 2008-03-16 |
| CN101145514A (en) | 2008-03-19 |
| KR20080024054A (en) | 2008-03-17 |
| KR100861172B1 (en) | 2008-09-30 |
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