TW200814145A - Method for forming a fine pattern of a semiconductor device - Google Patents

Abstract

A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer. A cross-linking layer is formed on the sidewall of the first photoresist pattern. The first photoresist pattern is removed to form a fine pattern including a silicon polymer. A second photoresist pattern is formed that is coupled to the fine pattern. The underlying layer is etched using the fine pattern and the second photoresist pattern as an etching mask. As a result, the fine pattern has a smaller size than a minimum pitch.

Description

200814145 IX. INSTRUCTIONS: Cross-reference to related applications This application claims the priority of Korean Patent Application No. 10_2006_0087854 and H)-2〇〇7-〇〇64136, which are respectively at 2〇〇6 years 9 The monthly I2曰 and June 28, 2007 are submitted and their full texts are incorporated by reference. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a fine pattern of a semiconductor element having a pitch ((4)) which is beyond the limit of the lithography program. [Prior Art] Due to the popularity of information media (such as computers), the technology of semiconductor components has rapidly increased. Semiconductor components need to operate at high speeds and require high storage capacity. As a result, the manufacturing technology of semiconductor elements requires the fabrication of high-capacity memory elements having improved integration, reliability, and access to data characteristics. In order to improve the integration of components, optical lithography has been developed to form fine patterns. Optical lithography includes techniques using chemically amplified deep ultraviolet (DUV) light sources, such as exposure techniques for ArF (193 nm) and VUV (157 nm), and developed photoresist materials suitable for exposure sources. The processing speed of the semiconductor element is dependent on the line width of the pattern. For example, when the line width of the pattern is lowered, the processing speed is increased to improve the performance of the element. Therefore, it is important to control the line width of the pattern according to the size of the semiconductor component. 5 200814145 In addition to the development of the photoresist material, the history uses a re-exposure and rhyme program to form a fine pattern with a reduced line width. _ The method of mouth tea has been used in the manufacturing process of the current body parts. A conventional micro (four) time method using a double piece will be described with reference to FIG. ^Heavy wire (4) into a semiconductor element / Form a base layer and a hard mask film on a semiconductor substrate. A first lithography process is performed to form a width _ and a _ pitch pattern 疋X衢-like structure in the first photoresist region ''cell reg_' to be connected to the circuit pattern on the peripheral region. Performing the first - An An"... Into the --- lithography program to form the second photoresist I /, as shown in Figure 1 'width on the cell area · and - spacing pattern is in a bridge structure and surrounding The circuit pattern connecting photoresist pattern ii on the area is alternately arranged in the cell region. However, due to the analytical limitation of the lithography apparatus, the control covers the uniformity of the sentence and forms a difficulty in finding that it is less than 9 The pattern of the size of the Ό spacing is [the content of the invention] The various specific aspects of the present invention are related to the method of providing the fine pattern of the piece. The snail V body 兀 = the specific aspect of the invention, the micro method for forming the semiconductor element A resist pattern is included on a cell region of the semiconductor substrate including the underlayer. The yttrium-containing polymer layer is formed on the first pattern and the substrate (4) to form the resultant structure. The material 6 200814145 =, in the first photoresist The interface pattern and the interface containing the stone polymer layer, the upper part of the case is exposed. Remove the exposed first straight: make the brother-resist agent map - r α of the brother-resistance map to the household (10) several districts Or formed on The layered micro-A' early second photoresist pattern is formed: the pattern is bonded on the cell region. The micro-peripheral region is used instead of the wide-pattern, the second pattern and the second photoresist pattern. Masking the base layer to form a base layer pattern.,... In a specific aspect, the method for squatting, #α is included in the younger brother of the fine pattern containing the beauty/panel conductor elements - The photoresist pattern is formed on the cover film. The layer is formed on the first photoresist pattern: % micro-grain is used as rhyme, and second: layer is a fine pattern. The mask is patterned using a first cover film to make hard The mask film is patterned to form a hard cover: a second wood is formed between the hard mask film patterns in the unit region.: Wide crosslink: is formed on the sidewall of the second photoresist pattern. Pattern. The disk = case to form the second cross-linking layer, the first, the fourth, the field pattern and the hard mask pattern 荦 之 之 一 一 一 一 一 一 一 一 ^ ^ ^ ^ ^ 二On the hard cover, instead of the unit "乍 = mask to map the base layer to shape Form a base layer pattern. The sturdy substance includes an epoxy group as a crosslinkable functional group. Specifically, 7 200814145 = light program to form an octaplex layer from the first photoresist pattern, and the epoxy group bond is broken at the end portion of the other epoxy group to bake the program. % of the post with the photoresist material. Crosslinking generated by the cross-linking layer is not involved but is cross-linked with the photoresist pattern: = on the photoresist pattern.乂 疋 layer formation [embodiment]

The invention will be explained in more detail with reference to the drawings. Figs. 2a to 2g are diagrams illustrating a method of forming a fine pattern of a semiconductor member according to the present invention. Figures 2a through 2 are diagrams showing a plan view of one side of the phase of the figure and another line 3 of Figure 2a. Figure σ = 2 Figure 2M 〇 2f is a cross-sectional view illustrating the line 3 from Figure 2a. Fig. 22 A is a plan view showing two patterns having a bridge shape obtained by a photographic process. Fig. 2a shows a base layer η formed on the semiconductor substrate 21. The substrate " 23 includes a conductive layer for the parent to form a bridge pattern. The layer 23 may be a word line, a bit line, a metal line or a combination thereof formed of a wafer or a metal layer. A first photoresist film (not shown) is applied to the base layer 23. An exposure and development process is performed on the photoresist film using an exposure mask to form a first photoresist pattern 25 having a line width W1 in the cell region. ▲ The first photoresist film comprises a chemically amplified photoresist polymer, a photoacid generator and an organic solvent. Cute

T uses any photoresist polymer, such as USPN 8 200814145 6,051,678 (April 18, 2000), USPN 6,132,926 (October 17, 2000), USPN 6,143,463 (November 7, 2000) ), USPN 6,150,069 (November 21, 2000), USPN 6,180,316 Bl (January 30, 2001), USPN 6,225,020 Bl (May 1, 2001), USPN 6,235,448 Bl (May 22, 2001) (Sunday), and USPN 6,235,447 B 1 (May 22, 2001). Specifically, the polymer includes one of the following: poly (l- ϊ 己 己 -1- -1- 弟 弟 弟 弟 / / / 马 马 马 马 马 马 马 马 ; ; ; ; ; ; ; ; ; ; ; ; ; ; -cyclohexene-1-tris-butylweilate/maleic anhydride/3_cyclohexene-1-methanol); poly(1-cyclohexene-1-third-butyl carboxylate/ Maleic anhydride / 3_cyclohexene fine drunk), poly (3 - 哀 己 细 -1- -1- -3- butyl glutamate / Malay wild /2 - ί 衣 卸 -1 - yeast), Poly (3 - 哀 己 _ _ 1 - 2 - butyl wei acid g / maleic anhydride / 3-cyclohexene-1- decyl alcohol); poly (3-cyclohexene-1-ethoxyl) Propyl carboxylate / maleic anhydride / 3 - cyclohexene-1 -methanol); poly(3-cyclohexene-1 -tert-butylferrylate /maleic anhydride / 3-cyclohexene - 1,1-dimethanol); poly(3-(5-bicyclo[2.2.1]-hepten-2-yl)-1,1,1-(trifluoromethyl)propan-2-ol/Malay Anhydride/2-methyl-2-adamantylmethyl acrylate-2-(ethyl-methacrylate); poly(3-(5-bicyclo[2.2.1], -g-lean-2) -yl)-1,1,1-(trifluoromethyl)propan-2-ol/Malay needle/2-methyl-2-adamantyl methacrylate/2-hydroxyethyl methacrylate Ester/norbornene); poly(3-(5) -bicyclo[2.2.1]-hepten-2-yltrifluoromethyl)propan-2-ol/maleic anhydride/tertiary-butyl methacrylate/2_hydroxyethyl methacrylate); Poly(T-butylbicyclo[2.2.1]hept-5-ene-2-nonanoate/2-ethylethylbicyclo[2.2.1]hept-5-ene-2.carboxylate/bicyclo[ 2·2_1]hept-5-ene-2-nonanoic acid/maleic anhydride/2-hydroxyethylbicyclo[2·2·1]hept-5-ene-2-carboxylate); and poly(third -butylbicyclo[2·2·1]hept-5-ene-2-carboxylate/2-hydroxyethylbicyclo 9 200814145 [2,2.1]hept-5-ene-2-carboxylic acid vinegar/bicyclo[ 2.2.1] hept-5-ene-carboxylic acid/malay needle/2-ethyl bicyclo [2.2.2] xinfeng 2, vinegar vinegar, each of the above compounds contains monomers each having _artisan Soil U improves the adhesion and cross-linking properties of the substrate.

Any photoacid generator can be used to generate acid by light. The photoacid generator may include one of the following: o-xylylenediamine-trifluoromethanesulfate; 'Ditrite-based keto-toluate'-n-nonyldifluoride, naphthylimidotrile Rat alkaloids, diphenylphosphonium hexafluorophosphate, diphenyl hexahydrate, acid salt: diphenyl hexafluoroantimonate, diphenyl-p-methoxyphenyl mirror A, a phthalate, a diphenyl-p-tolyl-trifluoromethyl acid salt, a diphenyl-p-isobutylphenyl fluorene trifluoromethane acid salt, a triphenyl hexafluoro Kunate salt, a triphenyl group Hexa acid salt, triphenyl trifluoromethane acid salt, or dibutyl ketone fluorene trifluoromethane. The X 1 0 0 is a photoresist polymer based on heavy damage, and the photoacid generator is present in an amount ranging from about 0.1 to 10 parts by weight. When the photoacid generator 存在 is present in an amount of less than 0,1 parts by weight, the sensitivity of the photoresist to light becomes weak. When the photoacid generator is present in an amount of more than 0.1 part by weight, the photoresist absorbs a large amount of deep ultraviolet rays and generates a plurality of acids to obtain a pattern having an unfavorable cross section. The organic solvent may include one of the following: diethylene glycol diethyl ether, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propylene glycol methyl ether acetate, cyclohexanone, 2-glycol _ And mixtures thereof. The organic solvent is present in an amount ranging from about 1 Torr to about 2 Å by weight to obtain a photoresist film having a desired thickness based on 100 parts by weight of the photoresist polymer. 200814145 Figure 2b shows the germanium-containing polymer layer 27 applied to the resulting structure containing the first photoresist pattern 25. The cerium-containing polymer comprises stellite, and the cerium is present in an amount ranging from about 1 Torr to about 4% by weight based on the total weight of the polymer and the epoxy group as the crosslinkable functional group. When the Shixi molecule is stored in an amount of less than 1% by weight, after performing a blanket-etching procedure for exposing the top region of the photoresist pattern 25, in the crosslinked layer 29 Several pores are formed on the surface. When the Shixi molecule is a number of more than 4% by weight; it is reported that it is difficult to uniformly coat the ruthenium-containing polymer 27 onto the first photoresist pattern. By providing a composition containing a ceramyl polymer and a solvent (for example, I, ~~ burning solvent or C5~C10 alcohol), the polymer composition is spin-coated, and then baked to obtain a cerium-containing polymer layer. . Specifically, the complex includes a polyoxyphthalocytic compound, a polysulfide compound, and a mixture thereof. Fang Guang...7~Cl° burning solvent is selected from the group consisting of:

Geng appearance, Xin Xin, 壬 癸, 癸 W W by T W Β 。. The C5 to C1D alcohol is selected from the group consisting of. $g^, cut, sterol, sterol and 仟, the structure is sub-baked to the extent of cross-linking - at the interface between the first resist pattern and the chelating layer. / Cheng Yudi The exposure method is performed using exposure energy ranging from the heart to the heart (10). 〇1〇0—and preferably 40. The epoxy in the solar polymer layer 27 by the exposure method is: the acid formed in the pattern 25 causes the enamel-containing epoxy beauty bundle to be separated. . In the baking method, the separation is divided into and the base contained in the photoresist polymer. The thickness of the parent layer 29 can be adjusted depending on the baking conditions. The baking method is at a temperature of about 130 μ 200 〇c, although the fish 笙ϊ W #, has a cross-linked layer 29 of the same width and thickness of the 〃-a photoresist pattern, a photoresist pattern and a ruthenium-containing polymer layer. Between the interfaces. , '^ is formed into a 2 image structure to remove the 27 which is not crosslinked with the photoresist pattern. As a result, as shown in FIG. 2c, the crosslinked layer 29 is two.

On the sidewall of the first resist pattern 25. In the development process, a fine pattern is formed in the X ^ I crucible for about 50 to 70 seconds in n-pentanol. Further, Fig. 2d shows the structure obtained in the object 2c to be removed; 〇; Liankun. T-Wave Residue Procedure * Again as layer 29 until the first photoresist area is exposed to obtain the structure. The top area _ uses the gas containing fluorine to enter Τρ: ίη Λ4- Φ ^ a Overlay entanglement procedure. The electric 4 etching gas includes CF4, chf and a combination thereof. 3 C2F6 > C3F8, c4f8 Fig. 2e shows the resulting structure obtained after removing the exposed first crosslinked layer 29, the magnetic ... a hindrance pattern 25 to retain the layer 29. As a result, the fine figure of the mountain is shaped by the enterprise, and the composition of the parent layer 29 is formed on the semiconductor substrate 21. The pattern has a line width W2 (W1 > W2).

Use the 〇2 and N patterns 25 to use. And body ▲ you 2 this mouth gas atmosphere to remove the first - photoresist eight body and Lu, use 〇 2 and (%) ten 15%: 85_99% (preferably 〇χτ 2 and 〇 2 · · The flow rate of the crucible is removed to remove the first photoresist pattern '2 · 2 = ί0 · · 90) mixed gas atmosphere 12 200814145 After removing the first photoresist pattern, the method can further include impregnation The wafer was held in n-pentanol for about 5G to 7g seconds to clean the wafer. Figure 2f shows "F applied to the second photoresist film 31 on the resulting structure. The second photoresist may comprise the same material used for the first photoresist film. As shown in FIG. 2g, an exposure and development process is performed on the second film of a first resist film M to form a second region 70 in the peripheral region (seven and @), the photoresist pattern 3 to the ... The shielding unit and the exposed peripheral area and the exposure mask of the single area S through the single S are used for the exposure process. One side of the second photoresist pattern 31_1 is on the side, and the port a is formed on the side surface of the micro- and/or the cross-linked layer 29. Gentleman fruit, reported the pattern of the n-shaped structure. ,,. If the $ is as shown in Fig. 具有, it is necessary to overcome the limitation of the current device due to the high degree of integration of the semiconductor components, and the fine pattern 29 of the cut polymer 27 is used in the groove portion. (4) Upper, and the second photoresist pattern is formed on regions (b) and (4) other than single ==. Using the second photoresist pattern 31 of the fine display (b) and (4) of the cell region (4), the base layer iron and the fruit base layer pattern (not shown) are arranged in a bridge form to overcome the lithography process. limit. In the specific aspect of the description, the method for forming the fine wood of the semiconductor element can be performed at least twice by the procedure of Fig. 2afJ2e. The amorphous carbon layer containing a hard mask film (not shown) is formed on the semiconductor substrate on which the underlayer is formed. The first photoresist pattern is formed on the early 70 region of the film. The first crosslinked layer is formed on the sidewall of the pattern of the first photoresist 10 200814145. # , ^ The upper-one photoresist pattern is then removed to form the first fine pattern containing the first parent layer. Using the #th fine pattern as a rhyme mask, the hard mask film is patterned to form a hard mask film pattern. The first photoresist pattern is formed on the sidewall of the second photoresist pattern on the hard mask film. Then, the first: _ 1 / 3 has a second fine pattern of the second cross-linking layer. The second fine pattern and the hard mask pattern 与 ^ between the semiconductor μ and the second resistive pattern are formed on the peripheral region of the bovine V-body substrate, not the unit region. The material has an area (the third photoresist pattern of the towel hard material and the exposure mask with the shadow area (where the second fine pattern is attached to the third photoresist 2) or by the displacement exposure mask (where one of the connection sites is concealed) to form a third photoresist pattern. The base layer is patterned using a more mask pattern 'the second fine pattern and the third photoresist pattern as a residual mask to The substrate layer pattern is formed. The foregoing specific aspects of the invention are intended to be illustrative and not restrictive. The invention may be modified and equivalent. The invention is not limited by the lithographic steps described herein. It is not limited to any particular form of semiconductor component. For example, the invention can be performed in a non-volatile memory device in a singular random access memory (DRAM) device. From the perspective of this disclosure, other additions, changes or changes are made. It is obvious and is intended to be within the scope of the appended claims. 祀 [Simple Description of the Drawings] 200814145 Figure 1 is a plan view showing a fine pattern for forming a semiconductor element. Figures 2a to 2g are diagrams illustrating the present invention. Specific aspect A cross-sectional and plan view of a method of finely patterning a body.

Forming semi-conductive method of the method [main element symbol description] 11: first photoresist pattern 13: second photoresist pattern 21: semiconductor element 23: base layer 25: first photoresist pattern 27: containing germanium Polymer 29: Crosslinked layer 31: Second photoresist pattern 31: Second photoresist pattern

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Claims (2)

200814145 X. Patent application: 1. A method for forming a fine pattern of a semiconductor device, the method comprising: forming a first photoresist pattern on a cell region of a semiconductor substrate including a substrate layer (cell regi〇n) Forming a parent layer on the sidewall of the first photoresist pattern; removing the first photoresist pattern to form a fine pattern containing the crosslinked layer on the cell region; forming and micrographs The photoresist pattern of the 丨 丨 、 , , , , , , , , , , , , , , , , , , , , , , , , , 第二 σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ σ And the second photoresist pattern is used as a money mask to pattern the base layer. 2. The method of claim 1, wherein the substrate layer is selected from the group consisting of a word line, a metal line, and a combination thereof. 3. If the patent application scope is ^ ^ y ^ The method of forming a crosslinked layer comprises: providing a polymer composition comprising a cerium-containing polymer and an organic solvent to form a polymer composition for forming a cerium-containing polymer layer; a photoresist pattern and a substrate layer a photoresist and a paste exposure process and a bake process to form a crosslinked sound at the interface between the first pattern and the cut polymer layer; the removal does not involve the formation of a crosslinked layer Residual inclusion of stellite polymer) 200814145 m Blank-etching of the crosslinked layer until the upper region of the first resist pattern is exposed. 〃弟光4·If you apply for patent scope 3^^, the method of the younger brother, in which the organic solvent includes 7-Cig alkane solvent and c5_CiG alcohol. The method of claim 4, wherein the burning solvent is selected from the group consisting of gargene, octopus, simmering, simmering and mixtures thereof. 6. The method of claim 4, wherein the alcohol is selected from the group consisting of: "heptanol, octanol, decyl alcohol, decyl alcohol, and mixtures thereof. 矽, /, human method' It contains a range of from about w to "% by weight". Under the circumstance, the number of Shi Xizhi is 8. The method of claim 3, the cross-linkable functional group is included in the pot. - 中a 来 来 包 9. 9. As for the third item of the patent application, the gans is an epoxy group. , A, octagonal crosslinkable functional group Lu 10 · As described in the third paragraph of the patented polyoxane compound, the poly 1/2 ', 3 矽 polymer is a dry 7 decane compound and a mixture thereof. h, as claimed in claim 3, can be used to carry out the method of 交 > r, in which the baking procedure is carried out at a temperature at which the thickness of the outer layer of the ear is uniform.疋在12· If you apply for a patent, u will be in the coffee. . The temperature is carried out. The method in which the baking process is U. The process of joining the third layer of the patent application is carried out using a fluorine-containing, medium-overlap etching etching body. 14. The method of applying the patent scope item n /, the medium engraving gas is 17 200814145 free, r V 2 6 3 8 ' C4F8 and its combination of the Jun sheep group. 15. For example, the method of applying for the patent scope: .. R ^ member, which uses oxygen and gas, and 〇 2 : Ν ' 夕, 、, 、, also 1 a 5% of the peach caught 1_15%: 85-99. The mixture etch gas to remove the first photoresist pattern. 16 · As claimed in the patent specification, the method further comprises: after removing the photoresist pattern, immersing the wafer in n-pentanol In solution a method for forming a fine pattern of a semiconductor element, the method comprising: forming a hard mask film on a semiconductor substrate including a base layer; forming a photoresist pattern on the unit region of the hard mask film; Forming the first-parent layer on the sidewall of the first photoresist pattern; "the "resist pattern" to form the first fine pattern; "the heart is smothered; using the fine pattern as a rhyme mask to make the hard The mask film pattern forms a second photoresist pattern between the hard mask films; forming a second crosslinked layer on the sidewall of the second photoresist pattern; removing the third photoresist pattern to form the first a two-crosslinked fine pattern; Ang is formed on the deuterated region with a second fine pattern and a third hard mask of the second photoresist pattern; and -, using a hard mask pattern, the second fine macro is etched ^ ^ The second photoresist pattern is made up of , , and a cover to pattern the base layer to form a base layer pattern. 18 200814145 18. If the scope of patent application is i7, the amorphous carbon layer is included. 19. The method of claim i, wherein the method of the hard mask film comprises forming a first cross; the polymer coating of the polymer and the organic solvent is in the first The layer includes: providing a first ytterbium-containing polymer layer to form a first cerium-containing polymer layer; a neodymium resist pattern and a hard mask film on the first cerium-containing polymer layer to form a warm photoresist pattern and the first cerium-containing polymer Layer, baking process, to form a cross-linking at the interface between the first and the cross-linking layer does not involve the full production of the cross-linking layer ... - into the residual yttrium-containing polymer layer. Moon King-covered etching a cross-linking layer, a , and the upper area. 20. The scope of the patent application includes: 庶 - - * 路 一 光 光 光 之 之 之 之 之 之 之 之 * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * The polymer composition is formed on the first layer to form a second germanium containing polymer layer; the (iv) pattern and the hard mask film, the photoresist pattern and the second containing extraction/exposure and baking process are used in the first pair a layer containing a broken polymer layer; a cross-linking at the interface between the polymer layers to remove residual ruthenium-containing polymer layer which does not involve cross-linking; and 19 200814145 m full-cover etching second cross-linking The layer is exposed until the upper region of the second photoresist pattern is exposed. Η•1, country style: as the next page 20