CN101140964A - Thin film used for enhancing light emitting efficiency of LED and film coating method - Google Patents
Thin film used for enhancing light emitting efficiency of LED and film coating method Download PDFInfo
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- CN101140964A CN101140964A CNA200610030974XA CN200610030974A CN101140964A CN 101140964 A CN101140964 A CN 101140964A CN A200610030974X A CNA200610030974X A CN A200610030974XA CN 200610030974 A CN200610030974 A CN 200610030974A CN 101140964 A CN101140964 A CN 101140964A
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- led chip
- led
- membrane
- light
- film
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Abstract
When the light from LED chip sends out chips, majority of the light is returned by interface formed by the chips and exterior, which leads the lost of LED chip light. The invention provides a membrane and metallic-membrane method for improving the lighting efficiency of LED chip. The membrane is deposited on the surface of LED chip with the film coefficient of monolayer reflection reducing coating, which is made of TiO2 and the thickness is a quarter of the wavelength of the bright dipping. The membrane and metallic-membrane method is a method to deposit the membrane by electron gun evaporating. Plating the membrane on LED chip can improve the bright dipping efficiency of the LED chip by 10%.
Description
Technical field
Patent of the present invention relates to a kind of film and film plating process that is used to improve the led chip light extraction efficiency.
Technical background
The semiconductor lighting industry is risen in the whole world.In country's medium-term and long-term program for the development of science and technology strategy investigation meeting, " new century illuminating engineering " is recommended as major project, development semiconductor lighting engineering is to the new period.The light efficiency of power type white light LED has been brought up to 25~30lmPW now, enters general illumination market and really can replace incandescent lamp and fluorescent lamp, and its light efficiency need reach 150lmPW.This requires to improve constantly the quantum efficiency of LED on the one hand in the making of chip, also require simultaneously to improve light extraction efficiency in the process as far as possible encapsulation and the designing and producing of light fixture of LED.One of reason that existing LED light extraction efficiency is low is, the refractive index of led chip is higher, and the light that LED sends has quite a few light by the boundary reflection of chip with extraneous (epoxy resin) in the outgoing chip, therefore cause the loss of led chip light.
Summary of the invention
For overcoming above-mentioned shortcoming, the present invention proposes a kind of led chip film and film plating process that is used to improve light extraction efficiency, and this film can reduce the reflection of light when led chip sends, and improves the light extraction efficiency of led chip.Its basic principle is: led chip material refractive index height reaches 3.6 in the visible light refractive index.As the direct outgoing of light that fruit chip sends, then owing to boundary reflection, the luminous energy of loss has:
The LED structure of prior art is to use epoxy encapsulation in led chip outside, but this way still can allow 20% optical energy loss, and result of calculation is as follows:
Interface one: epoxy resin, led chip:
The refractive index of epoxy resin is 1.56 at visible light.Therefore, the reflection at this interface is:
Interface two: epoxy resin, air:
Therefore, the light that led chip sends through two boundary reflections after, light intensity becomes
T
1=(1-15.6%)(1-4.78%)=80.3%;
The present invention plates one deck TiO outside led chip
2(optical thickness be optical wavelength 1/4), and then add epoxy encapsulation.After the present invention's processing, the LED light extraction efficiency can improve 10%.Carry out the calculating of this structured light transmissive rate below.
Interface one: TiO
2, led chip.
TiO
2Refractive index be 2.2 at visible light.Therefore, the reflection at this interface is
Interface two: epoxy resin, TiO
2
The reflection at this interface is
Interface three: epoxy resin, air.
Therefore, the light that led chip sends through three boundary reflections after, light intensity becomes
T
2=(1-5.8%)(1-2.8%)(1-4.78%)=87.19%。
As seen, through plating one deck TiO on led chip
2, the more existing structure of light extraction efficiency has improved
(T
2-T
1)/T
1=9.96%≈10%。
Technical scheme of the present invention is a kind of anti-reflection film of design, is coated with this film on led chip, carries out Vacuum Package then, can make the light extraction efficiency of LED improve about 10%.
A kind of film that is used to improve the led chip light extraction efficiency is characterized in: film is to be deposited on the led chip surface, and film is a single layer anti reflective coating, material selection TiO
2, thickness is 1/4th times of optical wavelength.
The film plating process of film is characterized in: adopt electron gun evaporation deposit film method.
Description of drawings
Below in conjunction with drawings and Examples the present invention is described in detail.
Accompanying drawing is the structural representation of LED luminescence chip of the present invention.
1.LED luminescence chip, 2. single layer anti reflective coating.
Embodiment
Add plating single layer anti reflective coating 2 on the surface of LED luminescence chip 1, single layer anti reflective coating material selection TiO
2, film thickness is 1/4 times of optical wavelength.Film plating process is taked electron gun evaporation deposit film method.
(1) led chip is cleaned up;
(2) chip is put into coating machine, put into TiO
2Target;
(3) be evacuated to 2 * 10
-2Pa, the beginning evaporation;
(4) use optical monitor, treat TiO on the led chip
2Optical thickness closes plate washer to 1/4 of supervisory wavelength, stops evaporation.
The present invention adds the plating anti-reflection film on the surface of LED luminescence chip, can improve the light emission rate about 10% of LED luminescence chip.Can be widely used in the making of all kinds of luminescence chips.
Claims (2)
1. film that is used to improve the led chip light extraction efficiency, it is characterized in that: film is to be deposited on the led chip surface, and film is a single layer anti reflective coating, material selection TiO
2, thickness is 1/4th times of optical wavelength.
2. a coating thin film method that is used to improve the led chip light extraction efficiency is characterized in that: adopt electron gun evaporation deposit film method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA200610030974XA CN101140964A (en) | 2006-09-08 | 2006-09-08 | Thin film used for enhancing light emitting efficiency of LED and film coating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA200610030974XA CN101140964A (en) | 2006-09-08 | 2006-09-08 | Thin film used for enhancing light emitting efficiency of LED and film coating method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101140964A true CN101140964A (en) | 2008-03-12 |
Family
ID=39192795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNA200610030974XA Pending CN101140964A (en) | 2006-09-08 | 2006-09-08 | Thin film used for enhancing light emitting efficiency of LED and film coating method |
Country Status (1)
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CN (1) | CN101140964A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101621106B (en) * | 2009-07-30 | 2012-05-16 | 中国计量学院 | LED with antireflection film and preparation method thereof |
CN102954388A (en) * | 2012-12-12 | 2013-03-06 | 陕西烽火佰鸿光电科技有限公司 | Improved LED (light emitting diode) lamp and film coating method thereof |
CN103700746A (en) * | 2013-12-10 | 2014-04-02 | 西安交通大学 | Light-emitting semiconductor device |
CN105470362A (en) * | 2015-12-31 | 2016-04-06 | 天津三安光电有限公司 | Preparation method of light-emitting diode |
CN108133988A (en) * | 2017-12-20 | 2018-06-08 | 西安电子科技大学 | The manufacturing method and LED chip of a kind of LED chip |
CN113671742A (en) * | 2021-08-30 | 2021-11-19 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display panel and interactive display equipment |
-
2006
- 2006-09-08 CN CNA200610030974XA patent/CN101140964A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101621106B (en) * | 2009-07-30 | 2012-05-16 | 中国计量学院 | LED with antireflection film and preparation method thereof |
CN102954388A (en) * | 2012-12-12 | 2013-03-06 | 陕西烽火佰鸿光电科技有限公司 | Improved LED (light emitting diode) lamp and film coating method thereof |
CN103700746A (en) * | 2013-12-10 | 2014-04-02 | 西安交通大学 | Light-emitting semiconductor device |
CN103700746B (en) * | 2013-12-10 | 2017-01-04 | 西安交通大学 | A kind of luminous semiconductor device |
CN105470362A (en) * | 2015-12-31 | 2016-04-06 | 天津三安光电有限公司 | Preparation method of light-emitting diode |
CN105470362B (en) * | 2015-12-31 | 2018-08-14 | 天津三安光电有限公司 | A kind of preparation method of light emitting diode |
CN108133988A (en) * | 2017-12-20 | 2018-06-08 | 西安电子科技大学 | The manufacturing method and LED chip of a kind of LED chip |
CN108133988B (en) * | 2017-12-20 | 2020-11-24 | 西安电子科技大学 | LED chip manufacturing method and LED chip |
CN113671742A (en) * | 2021-08-30 | 2021-11-19 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display panel and interactive display equipment |
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Open date: 20080312 |