CN101136333A - Stack structure and patterning method thereof - Google Patents
Stack structure and patterning method thereof Download PDFInfo
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- CN101136333A CN101136333A CNA2006101280077A CN200610128007A CN101136333A CN 101136333 A CN101136333 A CN 101136333A CN A2006101280077 A CNA2006101280077 A CN A2006101280077A CN 200610128007 A CN200610128007 A CN 200610128007A CN 101136333 A CN101136333 A CN 101136333A
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Abstract
This invention relates to a stack structure used in patternization for forming an open pattern with a preset width in a material layer, in which, the stack structure includes a base layer, a polysilicon organic layer and a photo resist layer, and the base layer is set on the material layer, the polysilicon organic layer is between the base layer and the photo resist layer and is thinner than the base layer but 2 times thicker than the polysilicon organic layer and the thickness of the base layer is 3 times smaller than the preset open width.
Description
Technical field
The present invention relates to a kind of semiconductor technology, and particularly relate to a kind of stack architecture and use this stack architecture to come the method for patterning.
Background technology
In semiconductor technology, normally pattern is formed on the photoresist layer by photoetching process, then, again with the photoresist layer as etching mask, carry out dry type or wet etch process, with the treat patterned layer of the design transfer in the photoresist layer to the below.Along with the long-pending bodyization of the height of semiconductor element, (Critical Dimension, CD) more and more little, therefore, the required resolution of photoetching is more and more high for the manufacturing minimum feature of integrated circuit.For in response to high-resolution demand, the thickness of photoresist layer is more and more thin.Yet,, in follow-up etching process, as yet not fully with the treat patterned layer of design transfer, promptly totally etched probably as the photoresist layer of etching mask to lower floor if the thickness of photoresist layer is thin excessively.So, need a kind of method that can use glimmer to cause resist layer and pattern can be transferred to fully lower floor at present badly.
Summary of the invention
Purpose of the present invention is exactly that a kind of method of patterning is being provided, and can use thin photoresist layer to carry out the transfer of pattern.
Another purpose of the present invention provides a kind of stack architecture, can be used for Patternized technique, is used for the material layer of the littler live width of patterning.
The present invention proposes a kind of method of patterning, in order in a material layer, to form a patterns of openings, patterns of openings has a predetermined A/F, the method is to form bottom, many silicon organic layer and photoresist layer in the substrate that forms material layer in regular turn, the thickness of photoresist layer is greater than 2 times of many silicon organic layer thickness, but less than the thickness of bottom.Afterwards, patterning photoresist layer is to form patterns of openings in the photoresist layer.Then, be mask with the photoresist layer, many silicon of etching organic layer makes patterns of openings be transferred to many silicon organic layer.Afterwards, be mask with many silicon organic layer, etching bottom makes patterns of openings be transferred to bottom, and when patterns of openings was transferred to bottom fully, the photoresist layer was totally etched.Then, be mask with the bottom, etched material layer makes patterns of openings be transferred to material layer, and when patterns of openings was transferred to material layer fully, many silicon organic layer was totally etched.
Described according to the embodiment of the invention, also comprise a hard mask layer between above-mentioned material layer and the bottom, its thickness is slightly larger than the thickness of many silicon organic layer, and after etching bottom, before the etched material layer, comprise that also with many silicon organic layer and bottom be mask, the etch hard mask layer makes patterns of openings be transferred to hard mask layer.When patterns of openings was transferred to hard mask layer fully, many silicon organic layer was totally etched.
Described according to the embodiment of the invention, the thickness of above-mentioned bottom is less than 3 times of predetermined A/F.
Described according to the embodiment of the invention, above-mentioned in the photoresist layer, formation after the patterns of openings, patterns of openings is transferred to before many silicon organic layer, and/or after the etch hard mask layer, patterns of openings is transferred to before the material layer, also comprise a pre-shaping step, to change the width of patterns of openings.
Described according to the embodiment of the invention, the above-mentioned material layer comprises that it is mask that a conductor layer and this method also comprise with the bottom, and the etched conductors layer makes patterns of openings be transferred to conductor layer, afterwards, removes bottom again.
Described according to another embodiment of the present invention, comprise also between above-mentioned material layer and the substrate that a conductor layer and this method also comprise the removal bottom, be mask with the hard mask layer again, make patterns of openings be transferred to conductor layer.
Described according to the embodiment of the invention, the material of above-mentioned hard mask layer comprises silica, silicon nitride, silicon oxynitride, carborundum, silicon oxide carbide, fire sand.
Described according to the embodiment of the invention, the thickness of above-mentioned photoresist layer is 500 to the 2000 Izod right sides; The thickness of many silicon organic layer is 250 to the 500 Izod right sides; The thickness of bottom is 1000 to the 2500 Izod right sides; The thickness of mask layer is 250 to the 900 Izod right sides.
Described according to the embodiment of the invention, the thickness of above-mentioned bottom is less than 3 times of predetermined A/F.
Described according to the embodiment of the invention, above-mentioned siliceous organic layer is to form in the rotary coating mode, and its thickness is the minimum thickness that rotary coating can form.
Described according to the embodiment of the invention, the material of above-mentioned many silicon organic layer comprises that silicone content is the silicon polymer of 5-30wt.%.
Described according to the embodiment of the invention, above-mentioned bottom comprises varnish gum, causes resist layer as the I-linear light.
Described according to the embodiment of the invention, the method for above-mentioned photoresist layer patternization comprises with immersion lithography technology exposes, and the photoresist layer is a waterproof photoresist layer, or end face covers the photo anti-corrosion agent material layer of a watertight composition.
Described according to the embodiment of the invention, above-mentioned, wherein in the photoresist layer, form after the patterns of openings, patterns of openings is transferred to before many silicon organic layer, and/or after etching bottom, patterns of openings is transferred to before the material layer, also comprises a pre-shaping step, to change the A/F of patterns of openings.
The present invention proposes a kind of stack architecture that is used for patterning again, in order in a material layer, to form a patterns of openings, patterns of openings has a predetermined A/F, and this structure comprises a bottom, the organic layer of silicon more than one and a photoresist layer, and wherein bottom is positioned on the material layer; Many silicon organic layer, between bottom and photoresist layer, the thickness of photoresist layer is greater than 2 times of many silicon organic layer thickness but less than the thickness of bottom.
Described according to the embodiment of the invention, the thickness of above-mentioned bottom is less than 3 times of predetermined A/F.
Described according to the embodiment of the invention, above-mentioned stack architecture also comprises a hard mask layer, and between material layer and bottom, its thickness is slightly larger than the thickness of many silicon organic layer.
Described according to the embodiment of the invention, the material of above-mentioned hard mask layer comprises silica, silicon nitride, silicon oxynitride, carborundum, silicon oxide carbide or fire sand.
Described according to the embodiment of the invention, the material of above-mentioned bottom comprises varnish gum, causes resist layer as the I-linear light.
The present invention utilizes the characteristic of etching selection differences between each layer by the configuration sequence of each layer in the stack architecture and the discretion arrangement of thickness, can use extremely thin photoresist layer to carry out the transfer of pattern.Therefore, be suitable for very much in the little semiconductor element technology of live width.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Figure 1A to Fig. 1 E is a kind of generalized section of coming the method for patterning with stack architecture according to one embodiment of the invention illustrated.
Fig. 2 A to Fig. 2 E is a kind of generalized section of coming the method for patterning grid conductor layer figure with stack architecture according to the embodiment of the invention illustrated.
Fig. 3 A, 3B, 3C, 3D, 3E, 3EE and 3F are a kind of generalized section of coming the method for patterning with stack architecture according to another embodiment of the present invention illustrated.
Fig. 4 A, 4B, 4C, 4D, 4E, 4EE, 4F are the generalized section of a kind of method of the groove that forms fleet plough groove isolation structure with stack architecture according to another embodiment of the present invention illustrated.
The simple symbol explanation
100,200,402: substrate
102,202,302: material layer
106,206,306,406: bottom
108,208,308,408: siliceous organic layer
110,210,310,410: photoresist
112: predetermined patterns of openings
114: patterns of openings
150,250,360,460: stack layer
201: gate dielectric layer
202: conductor layer
304,404: hard mask layer
212: predetermined gap pattern
401: pad oxide
W1, W2, W3, W4: predetermined width
Embodiment
Figure 1A to Fig. 1 E, a kind of generalized section of coming the method for patterning with stack architecture that is illustrated for the foundation embodiment of the invention.
Please refer to Figure 1A, the present invention proposes a kind of stack architecture 150 that is used for patterning, to form a patterns of openings 112 in the material layer 102 of stack architecture 150 in substrate 100 by this.This patterns of openings 112 has a predetermined A/F W1.This stack architecture comprises a bottom 106, the organic layer of silicon more than one 108 and a photoresist layer 110, and wherein bottom 106 is positioned on the material layer 102; Many silicon organic layer 108 is between bottom 106 and photoresist layer 110
Please refer to Figure 1B, when coming patterned material layer 102 with above-mentioned stack architecture 150, is earlier with photoresist layer 110 patterning, to form patterns of openings 114 in photoresist layer 110.The method of patterning photoresist layer 110 can adopt traditional photoetching process, or adopts immersion lithography technology, exposes, and develops afterwards to form patterns of openings 114 again.
If finding patterns of openings 114 in the photoresist layer 110 when inspecting after development can't form in subsequent technique when having the opening of consistent width W 1 with the opening of being scheduled to 112, can before many silicon of etching organic layer 108, carry out the pre-shaping step of an A/F earlier, so that the width of patterns of openings 114 meets is required.
Then, be mask with photoresist layer 110, many silicon of etching organic layer 108 is so that patterns of openings 114 is transferred to many silicon organic layer 108.Etching method can adopt the dry-etching method.In carrying out etched process, photoresist layer 110 consumes because of etching, and when patterns of openings 114 was transferred to many silicon organic layer 108 fully, photoresist layer 110 may still have sub-fraction and remain on many silicon organic layer 108.
Thereafter, please refer to Fig. 1 C, is mask with photoresist layer 110 and many silicon organic layer 108, and etching bottom 106 is so that patterns of openings 114 is transferred to bottom 106.When patterns of openings 114 was transferred to bottom 106 fully, photoresist layer 110 can be fully totally etched.
Then, please refer to Fig. 1 D, is mask with many silicon organic layer 108, and etched material layer 102 makes patterns of openings 114 be transferred to material layer 102.When patterns of openings 114 was transferred to material layer 102 fully, many silicon organic layer 108 was totally etched.If in carrying out etched process, many silicon organic layer 108 is totally etched, can bottom 106 be etching mask then, proceeds etching, is transferred to material layer 102 fully up to patterns of openings 114.The method of etched material layer 102 for example is the dry-etching method, and etched gas is different because of the difference for the treatment of etched material layer 102.
Afterwards, please refer to Fig. 1 E, remove bottom 106.The method of removing bottom 106 can adopt dry type to remove method or wet type removal method.
In the stack architecture of the present invention, each layer stack order is all considered through scrupulous with thickness.It below is described respectively:
About the photoresist layer:
Because after many silicon organic layer 108 patternings, during to the bottom 106 of lower floor, the etching selectivity between many silicon organic layer 108 and the bottom 106 is very high, therefore with design transfer, the thickness of required many silicon organic layer is extremely thin, for example is the minimum thickness that spin coating can form.Therefore, the thickness of the photoresist layer on many silicon organic layer only need be enough to the mask as many silicon of etching organic layer, and the many silicon organic layer that its pattern is transferred to smoothly lower floor gets final product.Therefore, the present invention can used thickness quite thin photoresist layer, adopt the exposure light source of shorter wavelength to make the element of little live width.
About many silicon organic layer:
When design transfer to bottom 106, during material layer 102 below etching bottom 106, because the thickness as many silicon organic layer 108 of top mask layer is extremely thin, therefore, before pattern is transferred to material layer 102 fully, promptly totally etched, so, after pattern is transferred to material layer 102 fully, do not have any residual many silicon organic layer 108 on the bottom 106, therefore, the follow-up many silicon organic layer 108 that do not have is difficult to remove, or in the process of removing, etchant destroys the patterns of openings of material layer 102 or destroys the problem of substrate.
About bottom:
In design transfer to bottom 106, during material layer 102 below etching bottom 106, even many silicon organic layer 108 is promptly totally etched before pattern is transferred to material layer 102 fully, because bottom 106 has enough thickness, therefore, pattern can be transferred to material layer 102 smoothly.On the other hand, because the thickness of bottom 106 is no more than 3 times of predetermined A/F, that is, when etched material layer 102, the depth-width ratio of formed opening is less than 3 in bottom 106 and the material layer 102, and therefore, patterns of openings 114 can fully be transferred to material layer 102, and do not have etching not exclusively (open), can't form the problem of required opening.
The above stack architecture and the method for patterning can be applied in the Patternized technique of dielectric layer or conductor layer.Below will cooperate Fig. 2 A to 2E, be that example illustrates it with the process of gate conductor layer.
Please refer to Fig. 2 A, a substrate 200 be provided, formed in this substrate 200 gate dielectric layer 201 with gate conductor layer 202, a plurality of gaps 212 of preboarding in the gate conductor layer 202, the preset width of this gap 212 is W2.Gate conductor layer 202 for example is a doped polysilicon layer, or doped polysilicon layer and the common multi-crystal silicification metal level of forming of metal silicide layer.Stack architecture 250 comprises bottom 206, many silicon organic layer 208 and photoresist layer 210.Photoresist layer 210 can adopt positive photoresist or negative photoresist, and its thickness is 500 to the 2000 Izod right sides.It is the silicon polymer of 5-30wt.% that many silicon organic layer 208 can adopt silicone content, and as No. 6025117 those disclosed herein of United States Patent (USP), its thickness is 250 to the 500 Izod right sides.The material of bottom 206 for example is that the I-linear light causes resist layer, and its thickness is 2000 to the 2500 Izod right sides.
In one embodiment, the width W 2 in the gap 212 between the preformed patterning conductor layer is 65nm, and the thickness of many silicon organic layer 208 is 300 dusts; The thickness of photoresist layer 210 is greater than 600 dusts; The thickness of bottom 206 is less than 1950 dusts.In another embodiment, the width W 2 in the gap 212 between the predetermined patterning conductor layer that forms is 55nm, and the thickness of many silicon organic layer 208 is 300 dusts; The thickness of photoresist layer 210 is greater than 600 dusts; The thickness of bottom 206 is less than 1650 dusts.In another embodiment, the width W 2 in the gap 212 between the preformed patterning conductor layer is 45nm, and the thickness of many silicon organic layer 208 is 300 dusts; The thickness of photoresist layer 210 is greater than 600 dusts; The thickness of bottom 206 is less than 1350 dusts.
Please refer to Fig. 2 B, when coming patterning conductor layer 202 with above-mentioned stack architecture 250, is earlier with photoresist layer 210 patterning, to form patterns of openings 214 in photoresist layer 210.The method of patterning photoresist layer 210 can adopt traditional photoetching process, or adopts immersion lithography technology, exposes, and afterwards, develops to form patterns of openings 214 again.
If finding patterns of openings 214 in the photoresist layer 210 when inspecting after development can't form in subsequent technique when having the gap of consistent width W 2 with the gap of being scheduled to 212, can before many silicon of etching organic layer 208, carry out the pre-shaping step of a gap width earlier, so that the width of patterns of openings 214 meets is required.Pre-shaping step can be with carbon tetrafluoride and hydrogen bromide as reacting gas, with etching photoresist layer 110.
Then, be mask with photoresist layer 210, many silicon of etching organic layer 208 is so that patterns of openings 214 is transferred to many silicon organic layer 208.Etching method can adopt the dry-etching method, for example is with fluorine-containing gas, as perfluoro-compound as etching gas.
Thereafter, please refer to Fig. 2 C, is mask with photoresist layer 210 and many silicon organic layer 208, and etching bottom 206 is so that patterns of openings 214 is transferred to bottom 206.Etching method can adopt the dry-etching method, for example is as etching gas with the gas that contains oxygen, carbon monoxide, chlorine and argon gas.When patterns of openings 214 was transferred to bottom 206 fully, photoresist layer 210 can be fully totally etched.
Then, please refer to Fig. 2 D, is mask with many silicon organic layer 208, and etched conductors layer 202 makes patterns of openings 214 be transferred to conductor layer 202.When patterns of openings 214 was transferred to conductor layer 202 fully, many silicon organic layer 208 was totally etched.If in carrying out etched process, many silicon organic layer 208 is promptly totally etched, can bottom 206 be etching mask then, proceeds etching, is transferred to conductor layer 202 fully up to patterns of openings 214.The method of etched conductors layer 202 for example is the dry-etching method, and etched gas for example is perfluocarbon or sulfur fluoride (SF
6).
Afterwards, please refer to Fig. 2 E, remove bottom 206, make the conductor layer 202 of patterning expose out.The method of removing bottom 206 can adopt dry type to remove method, as the oxygen plasma ashing method.
Fig. 3 A to Fig. 3 F, a kind of generalized section of coming the method for patterning with stack architecture that is illustrated for foundation another embodiment of the present invention.
Please refer to Fig. 3 A, the present invention proposes a kind of stack architecture 360 that is used for patterning, and in order to form a prodefined opening pattern 312 in material layer 302, patterns of openings 312 has a predetermined A/F W3.This stack architecture comprises hard mask layer 304, bottom 306, many silicon organic layer 308 and photoresist layer 310, and wherein hard mask layer 304 is positioned on the material layer 302; Bottom 306 is positioned on the hard mask layer 304; Many silicon organic layer 308 is between bottom 306 and photoresist layer 310.The thickness of hard mask layer 304 is slightly larger than the thickness of many silicon organic layer 308; The thickness of photoresist layer 310 is then less than the thickness of bottom 306 but greater than 2 times of many silicon organic layer 308 thickness.
Please refer to Fig. 3 B, when coming patterned material layer 302 with above-mentioned stack architecture 360, is earlier with photoresist layer 310 patterning, to form patterns of openings 314 in photoresist layer 310.The method of patterning photoresist layer 310 can adopt traditional photoetching process, or adopts immersion lithography technology, exposes, and develops afterwards to form patterns of openings 314 again.
If finding patterns of openings 314 in the photoresist layer 310 when inspecting after development can't form in subsequent technique when having the opening of consistent width W 3 with the opening of being scheduled to 312, can before many silicon of etching organic layer 308, carry out the pre-shaping step of an A/F earlier, so that the width of patterns of openings 314 meets is required.
Then, be mask with photoresist layer 310, many silicon of etching organic layer 308 is so that patterns of openings 314 is transferred to many silicon organic layer 308.Etching method can adopt the dry-etching method, for example is with fluorine-containing gas, as perfluoro-compound as etching gas.In carrying out etched process, photoresist layer 310 consumes because of etching, and when patterns of openings 314 was transferred to many silicon organic layer 308 fully, photoresist layer 310 may only have sub-fraction to remain on many silicon organic layer 308.
Thereafter, please refer to Fig. 3 C, is mask with photoresist layer 310 and many silicon organic layer 308, and etching bottom 306 is so that patterns of openings 314 is transferred to bottom 306.Etching method can adopt the dry-etching method.When patterns of openings 314 was transferred to bottom 306 fully, photoresist layer 310 can be fully totally etched.
Then, please refer to Fig. 3 D, is mask with many silicon organic layer 308 with bottom 306, and etch hard mask layer 304 makes patterns of openings 314 be transferred to hard mask layer 304.When patterns of openings 314 was transferred to hard mask layer 304 fully, many silicon organic layer 308 was totally etched.
After etch hard mask layer 304, find that patterns of openings 314 in the hard mask layer 304 can't form when having the opening of consistent width W 3 with the opening of being scheduled to 312 in subsequent technique, can before etched material layer 302, carry out the pre-shaping step of an A/F earlier, so that the width of patterns of openings 314 meets is required.When carrying out pre-shaping step, the removal speed of bottom 306 and hard mask layer 304 must be about equally, to guarantee the consistency of its two patterns of openings 314.
Afterwards, please refer to Fig. 3 E, remove bottom 306.The method of removing bottom 306 can adopt dry type to remove method or wet type removal method.Dry type is removed method can adopt the oxygen plasma ashing method.Afterwards, be mask with hard mask layer 304, etched material layer 302 is so that patterns of openings 314 is transferred to material layer 302, shown in Fig. 3 F.
Other method is, please refer to Fig. 3 EE, after patterns of openings 314 is transferred to hard mask layer 304 fully, can be mask with bottom 306, and etched material layer 302 is so that the pattern 314 of opening is transferred to material layer 302.If bottom 306 approach exhaustions in etched process, then can hard mask layer 304 as mask, proceed etching, be transferred to material layer 302 up to patterns of openings 314.If in etched process, bottom 306 is approach exhaustion not, then after patterns of openings 314 is transferred to material layer 302 fully, bottom 306 is removed, shown in Fig. 3 F again.
In the stack architecture of the present invention, each layer stack order is all considered through scrupulous with thickness.It below is described respectively:
About the photoresist layer:
Because after many silicon organic layer 308 patternings, during to the bottom 306 of lower floor, the etching selectivity between many silicon organic layer 308 and the bottom 306 is very high, therefore with design transfer, the thickness of required many silicon organic layer 308 is extremely thin, for example is the minimum thickness that spin coating can form.Therefore, the thickness of the photoresist layer 310 on many silicon organic layer 308, only need be enough to mask as many silicon of etching organic layer 308, the many silicon organic layer 308 that its pattern is transferred to smoothly lower floor gets final product, therefore, its thickness is quite thin, can adopt the exposure light source of shorter wavelength to make the element of little live width.
About many silicon organic layer:
In design transfer to bottom 306, during etch hard mask layer 304, because as the thickness of many silicon organic layer 308 of top mask layer thin thickness than hard mask layer, therefore, if in etched process, select the etchant suitable for use to both etch-rates, then before pattern is transferred to hard mask layer 304 fully, many silicon organic layer 308 is promptly totally etched, so, after pattern is transferred to hard mask layer 304 fully, do not have any residual many silicon organic layer on the bottom 306, therefore, follow-up many silicon organic layer that do not have is difficult to remove, or in the process of removing, etchant destroys the problem of the patterns of openings of hard mask layer 304.
About bottom:
When design transfer to bottom 306, during hard mask layer below etching bottom 306, even many silicon organic layer 308 is promptly totally etched before pattern is transferred to hard mask layer 304 fully, but, because bottom 306 has enough thickness, therefore, pattern can be transferred to material layer 302 smoothly.On the other hand, because the thickness of bottom 306 is no more than 3 times of predetermined opening 312 width W 3, that is, when etch hard mask layer 304, the depth-width ratio of formed opening 314 is less than 3 in bottom 306 and the hard mask layer 304, and therefore, patterns of openings 314 can fully be transferred to hard mask layer 304, and it is incomplete not have etching, can't form the problem of required opening.
About hard mask layer:
For fear of the incomplete problem of etching, the thickness of bottom 306 is to be no more than 3 times of predetermined opening 312 width W 3 for good.But if there is not this hard mask layer 304, and the degree of depth of the opening 312 that desire forms in the material layer 302 is when dark, 306 of bottoms must have enough thickness, can be as etching masks, otherwise, when not forming the required opening degree of depth as yet in material layer 302, promptly etching has been totally for bottom 306.In bottom 306 and the advantage that material layer 302 increases the hard mask 304 of one deck be, even etching is totally in the process of etched material layer 302 for bottom 306, be lower than material layer 302 and can be used as the characteristic of mask by hard mask layer 304 etch-rates, still can in material layer 302, form required opening smoothly much smaller than bottom 306.
The above stack architecture and the method for patterning can be applied in the gate conductor layer or the technology of fleet plough groove isolation structure (STI), but are not limited thereto.The process that is applied to fleet plough groove isolation structure will cooperate Fig. 4 A to 4F to describe in detail as after.
Please refer to Fig. 4 A, a substrate 402 is provided, a plurality of grooves 412 of preboarding in this substrate 402, the preset width of this groove 412 is W4.Substrate 402 for example is that monoblock is semi-conductive base material, as silicon, germanium, germanium silicide, carborundum, or silicon (SOI) is arranged on the insulating barrier.Then, in substrate 402, form pad oxide 403 and stack architecture 460.This stack architecture 460 comprises hard mask layer 404, bottom 406, many silicon organic layer 408 and photoresist layer 410.Photoresist layer 410 can adopt positive photoresist or negative photoresist, and its thickness is 500 to the 2000 Izod right sides.It is the silicon polymer of 5-30wt.% that many silicon organic layer 408 can adopt silicone content, and as No. 6025117 those disclosed herein of United States Patent (USP), its thickness is 250 to the 500 Izod right sides.The material of bottom 406 for example is that the I-linear light causes resist layer, and its thickness is 1000 to the 2500 Izod right sides.Hard mask layer 404, material for example be silicon nitride, the method for its formation can adopt chemical vapour deposition technique, its thickness is slightly larger than the thickness of many silicon organic layer 408, for example is 250 to the 900 Izod right sides.
Please refer to Fig. 4 B, when coming patterned substrate 402 with above-mentioned stack architecture 460, is earlier with photoresist layer 410 patterning, to form channel patterns 414 in photoresist layer 410.The method of patterning photoresist layer 410 can adopt traditional photoetching process, or adopts immersion lithography technology, exposes, and afterwards, develops, to form channel patterns 414 again.
If when after development, inspecting, find that channel patterns 414 in the photoresist layer 410 can't form and during the groove of preset width W4 in subsequent technique, can before many silicon of etching organic layer 408, carry out the pre-shaping step of a groove width earlier, so that the width of channel patterns 414 meets is required.Pre-shaping step 120 can be with carbon tetrafluoride and hydrogen bromide as reacting gas.
Then, be mask with photoresist layer 410, many silicon of etching organic layer 408 is so that channel patterns 414 is transferred to many silicon organic layer 408.Etching method can adopt the dry-etching method, for example is with fluorine-containing gas, as perfluoro-compound as etching gas.In carrying out etched process, photoresist layer 410 consumes because of etching, and therefore, when channel patterns 414 was transferred to many silicon organic layer 408 fully, photoresist layer 410 may have sub-fraction and remain in many silicon organic layer 408, or totally etched.
Thereafter, please refer to Fig. 4 C, is mask with many silicon organic layer 408, and etching bottom 406 is so that channel patterns 414 is transferred to bottom 406.Etching method can adopt the dry-etching method, for example is as etching gas with the gas that contains oxygen, carbon monoxide, chlorine and argon gas.When channel patterns 414 was transferred to bottom 406 fully, residual photoresist layer 410 can be fully totally etched.
Then, please refer to Fig. 4 D, is mask with many silicon organic layer 408 with bottom 406, and etch hard mask layer 404 makes channel patterns 414 be transferred to hard mask layer 404.Etched the time, can select to carry out etching for many silicon organic layer 408 etchant suitable with the rate of etch of hard mask layer 404.Because the thickness of many silicon organic layer 408 is less than the thickness of hard mask layer 404, therefore, when channel patterns 414 was transferred to hard mask layer 404 fully, many silicon organic layer 408 was totally etched, can residual any many silicon organic layer 408 on bottom 406.
After etch hard mask layer 404, find that channel patterns 414 in the hard mask layer 404 can't form and during the groove 412 of preset width W4 in subsequent technique, can before etching substrate 402, carry out the pre-shaping step of a groove width earlier, so that the width of channel patterns 414 meets is required.When carrying out pre-shaping step, the removal speed of bottom 406 and hard mask layer 404 must be about equally, to guarantee the consistency of its two channel patterns 414.Pre-shaping step can carry out etching and finish it with carbon tetrafluoride or fluoroform as etching gas.
Afterwards, please refer to Fig. 4 E, remove bottom 406.The method of removing bottom 406 can adopt dry type to remove method or wet type removal method.Dry type is removed method can adopt the oxygen plasma ashing method.Afterwards, be mask with hard mask layer 404, etching pad oxide 403 and substrate 402 are so that channel patterns 414 is transferred to substrate 402, shown in Fig. 4 F.The method of etching substrate 402 can adopt the dry-etching method, for example is as etching reaction gas with perfluocarbon or sulfur fluoride.
Other method is, please refer to Fig. 4 EE, after channel patterns 414 is transferred to hard mask layer 404 fully, can not remove bottom 406 earlier, and is mask with bottom 406, and etching substrate 402 is so that the pattern 414 of opening is transferred to substrate 402, to form groove.If in etched process, bottom 406 approach exhaustions, then can hard mask layer 404 as mask, proceed etching, be transferred to substrate 402 up to channel patterns 414.If in etched process, bottom 406 is approach exhaustion not, then after channel patterns 414 is transferred to substrate 402 fully, bottom 406 is removed, shown in Fig. 4 F again.
Claims (23)
1. the method for a patterning, in order to form patterns of openings in material layer, this patterns of openings has predetermined A/F, comprising:
Substrate is provided, has formed this material layer in this substrate;
On this material layer, form bottom;
On this bottom, form many silicon organic layer;
Form the photoresist layer on this many silicon organic layer, the thickness of this photoresist layer is greater than 2 times of this many silicon organic layer thickness, but less than the thickness of this bottom;
This photoresist layer of patterning forms this patterns of openings in this photoresist layer;
With this photoresist layer is mask, and this many silicon organic layer of etching makes this patterns of openings be transferred to this many silicon organic layer;
With this many silicon organic layer is mask, and this bottom of etching makes this patterns of openings be transferred to this bottom, and when this patterns of openings was transferred to this bottom fully, this photoresist layer was totally etched; And
With this bottom is mask, and this material layer of etching makes this patterns of openings be transferred to this material layer, and when this patterns of openings was transferred to this material layer fully, this many silicon organic layer was totally etched.
2. the method for patterning as claimed in claim 1, wherein also comprise hard mask layer between this material layer and this bottom, its thickness is slightly larger than the thickness of this many silicon organic layer, and after this bottom of etching, before this material layer of etching, comprise that also with this many silicon organic layer and this bottom be mask, this hard mask layer of etching, make this patterns of openings be transferred to this hard mask layer, when this patterns of openings was transferred to this hard mask layer fully, this many silicon organic layer was totally etched.
3. the method for patterning as claimed in claim 2, wherein the thickness of this bottom is less than 3 times of this predetermined A/F.
4. the method for patterning as claimed in claim 2, wherein in this photoresist layer, form after this patterns of openings, this patterns of openings is transferred to before this many silicon organic layer, and/or after this hard mask layer of etching, this patterns of openings is transferred to before this material layer, also comprise pre-shaping step, to change the width of this patterns of openings.
5. the method for patterning as claimed in claim 2, wherein this material layer comprises that conductor layer and this method also comprise:
With this bottom is mask, and this conductor layer of etching makes this patterns of openings be transferred to this conductor layer; And
Remove this bottom.
6. the method for patterning as claimed in claim 2 comprises also between this material layer and this substrate that wherein conductor layer and this method also comprise:
Remove this bottom; And
With this hard mask layer is mask, makes this patterns of openings be transferred to this conductor layer.
7. the method for patterning as claimed in claim 2, wherein the material of this hard mask layer comprises silica, silicon nitride, silicon oxynitride, carborundum, silicon oxide carbide or fire sand.
8. the method for patterning as claimed in claim 2, wherein the thickness of this photoresist layer is 500 to the 2000 Izod right sides; The thickness of this many silicon organic layer is 250 to the 500 Izod right sides; The thickness of this bottom is 1000 to the 2500 Izod right sides; The thickness of this mask layer is for being 250 to the 900 Izod right sides.
9. the method for patterning as claimed in claim 1, wherein the thickness of this bottom is less than 3 times of this predetermined A/F.
10. the method for patterning as claimed in claim 1, wherein this siliceous organic layer is to form in the rotary coating mode, and its thickness is the minimum thickness that rotary coating can form.
11. the method for patterning as claimed in claim 1, wherein the thickness of this photoresist layer is 500 to the 2000 Izod right sides; The thickness of this many silicon organic layer is 250 to the 500 Izod right sides; The thickness of this bottom is 1000 to the 2500 Izod right sides.
12. the method for patterning as claimed in claim 1, wherein the material of this many silicon organic layer comprises that silicone content is the organosilicon polymer of 5-30wt.%.
13. the method for patterning as claimed in claim 1, wherein this bottom comprises varnish gum.
14. the method for patterning as claimed in claim 13, wherein this bottom comprises that the I-linear light causes resist layer.
15. the method for patterning as claimed in claim 1, wherein the method for this photoresist layer patternization comprises with immersion lithography technology and exposing, and this photoresist layer is a waterproof photoresist layer, or end face covers the photo anti-corrosion agent material layer of watertight composition.
16. the method for patterning as claimed in claim 1, wherein in this photoresist layer, form after this patterns of openings, this patterns of openings is transferred to before this many silicon organic layer, and/or after this bottom of etching, this patterns of openings is transferred to before this material layer, also comprise pre-shaping step, to change the A/F of this patterns of openings.
17. a stack architecture that is used for patterning, in order to form patterns of openings in material layer, this patterns of openings has predetermined A/F, comprising:
Bottom is positioned on this material layer;
Many silicon organic layer is positioned on this bottom; And
The photoresist layer is positioned on this many silicon organic layer, and the thickness of this photoresist layer is greater than 2 times of this many silicon organic layer thickness but less than the thickness of this bottom.
18. the stack architecture that is used for patterning as claimed in claim 17, wherein the thickness of this bottom is less than 3 times of this predetermined A/F.
19. the stack architecture that is used for patterning as claimed in claim 17 also comprises hard mask layer, between this material layer and this bottom, its thickness is slightly larger than the thickness of this many silicon organic layer.
20. the stack architecture that is used for patterning as claimed in claim 19, wherein the thickness of this bottom is less than 3 times of this predetermined A/F.
21. the stack architecture that is used for patterning as claimed in claim 19, wherein the material of this hard mask layer comprises silica, silicon nitride, silicon oxynitride, carborundum, silicon oxide carbide or fire sand.
22. the method for patterning as claimed in claim 17, wherein this bottom comprises varnish gum.
23. the method for patterning as claimed in claim 22, wherein this bottom comprises that the I-linear light causes resist layer.
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| CNB2006101280077A CN100527367C (en) | 2006-08-31 | 2006-08-31 | Stack structure and patterning method thereof |
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| CNB2006101280077A CN100527367C (en) | 2006-08-31 | 2006-08-31 | Stack structure and patterning method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074459A (en) * | 2009-11-25 | 2011-05-25 | 台湾积体电路制造股份有限公司 | Method for fabricating semiconductor device |
| CN102651312A (en) * | 2011-02-24 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate electrode |
| CN110648904A (en) * | 2018-06-27 | 2020-01-03 | 台湾积体电路制造股份有限公司 | Pattern forming method and material for manufacturing semiconductor device |
-
2006
- 2006-08-31 CN CNB2006101280077A patent/CN100527367C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074459A (en) * | 2009-11-25 | 2011-05-25 | 台湾积体电路制造股份有限公司 | Method for fabricating semiconductor device |
| CN102074459B (en) * | 2009-11-25 | 2013-05-29 | 台湾积体电路制造股份有限公司 | Method for fabricating semiconductor device |
| CN102651312A (en) * | 2011-02-24 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate electrode |
| CN110648904A (en) * | 2018-06-27 | 2020-01-03 | 台湾积体电路制造股份有限公司 | Pattern forming method and material for manufacturing semiconductor device |
| US11320738B2 (en) | 2018-06-27 | 2022-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern formation method and material for manufacturing semiconductor devices |
| CN110648904B (en) * | 2018-06-27 | 2023-03-14 | 台湾积体电路制造股份有限公司 | Pattern forming method and material for manufacturing semiconductor device |
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| Publication number | Publication date |
|---|---|
| CN100527367C (en) | 2009-08-12 |
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