CN101136250A - Three-dimensional storage module better than synchronization micro-bracket - Google Patents
Three-dimensional storage module better than synchronization micro-bracket Download PDFInfo
- Publication number
- CN101136250A CN101136250A CNA2006101287428A CN200610128742A CN101136250A CN 101136250 A CN101136250 A CN 101136250A CN A2006101287428 A CNA2006101287428 A CN A2006101287428A CN 200610128742 A CN200610128742 A CN 200610128742A CN 101136250 A CN101136250 A CN 101136250A
- Authority
- CN
- China
- Prior art keywords
- chip
- storage
- same period
- dimensional
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
A 3-D memory module (3D-MM) is disclosed, whose storage capacity and external size are better than that of same-period micro-hard-disk (CMD). The production cost of the 3D-MM ((3D)2-MM) based on the (3D-M) is better than that of same-period micro-hard-disk (CMD). The 3D-MM based on 3-D mask programming memory (3D-MPM) is a portable multi-media data base, especially a video data base which provides a storage body with super-large capacity.
Description
Technical field
The present invention relates to the integrated circuit memory field, or rather, relate to three-dimensional memory module.
Background technology
For satisfying consumer's hope of time visit multimedia document in action, researched and developed multiple portable multimedia apparatus on the market, as mobile phone, PDA (personal digital assistant (PDA)), portable video player (comprising game machine), GPS orientator etc.Many matchmakers. the body data is stored in these equipment with the form of storage card, SIM card or in-line memory.Fig. 1 has shown that can be inserted the also mobile phone 20 of play multimedia storage card 22.
The portable multimedia storer has great market, and only mobile phone will be above 1,000,000,000 ones at expection annual turnover in 2008.At present, two kinds of memory technologies are being fought for this market intensely: the one, and semiconductor non-volatile memory (non-volatile memory abbreviates NVM as) is as flash memory (flash), three-dimensional storage (three-dimension memroy, abbreviate 3D-M as, details are section as follows); The 2nd, micro harddisk (micro-drive), i.e. 1 inch hard disk, its external dimensions is not more than 40mm * 30mm * 5mm.
For the professional person who is not familiar with 3D-M, Fig. 2 is the skeleton view of a three-dimensional storage (3D-M).It contains at least two the accumulation layer 40a that pile up mutually, 40b.Each accumulation layer (as 40b) contains many word lines (as 51a, 51b), bit line (as 52a, 52b) and storage element (as 55aa-55bb).These storage elements are realized being electrically connected with substrate 30 by interlayer interface channel mouth (as 58a, 58b, 59a, 59b).3D-M can be divided into two kinds: three-dimensional masking film program storer (three-dimensionalmask-programmable memory, abbreviate 3D-MPM as) and three young electric programming read-only memories (three-dimensional electrically programmable read-only memory abbreviates 3D-EPROM as).In 3D-MPM, digital code information is introduced by lithography mask version in manufacture process.For 3D-EPROM, the user can carry out field programming to storer.One the 3D-EPROM of volume production be based on 3D-M anti-fuse (antifuse), one-time programming (OTP).The details of relevant 3D-M can be with reference to United States Patent (USP) 5,835, and 396,6,034,882,6,717,222 etc.
Which kind of memory technology will win the portable multimedia storage market actually? nonvolatile memory (NVM) or micro harddisk? the answer of this problem relates to the ownership of over ten billion dollar.A deciding factor is both memory capacity.Table 1 (being Fig. 3) is at the different technologies node, relatively the NVM chip and the same period micro harddisk memory capacity.Here, the same period, micro harddisk was meant interested technology node micro harddisk introducing, that the have max cap. same period with institute.In table l, "? " the characteristic dimension of representing this NVM difficulty narrows down to this technology node; "-" represents that the characteristic dimension of this NVM unlikely narrows down to this technology node.At 50nm node (promptly 2006), a 140mm
2The memory capacity of flash chip can reach 2GB (or 16Gb), the 3D-EPROM chip of similar size can be stored 3 times capacity (promptly～6GB/ chip), and 3D-MPM can store 8 times capacity (promptly～16GB/ chip).On the other hand, the same period (promptly 2006) micro harddisk memory capacity can reach 8GB.Clearly, with the same period of micro harddisk relatively during memory capacity, NVM be in a disadvantageous position (except that 3D-MPM).When semiconductor technology evolves arrives the 17nm node (about the year two thousand twenty), all right further raising capacity of the micro harddisk same period, and quickflashing and 3D-EPROM have stagnated basically.At this moment, the same period, micro harddisk was more obvious with respect to the advantage of NVM-especially quickflashing and 3D-EPROM-.
Though NVM on memory capacity with respect to the same period micro harddisk be in a disadvantageous position, it still has a clear superiority on energy consumption and reliability, so a lot of the application still wishes to use NVM.Correspondingly, the present invention proposes a kind of three-dimensional memory module (three-dimensional memory module, abbreviate 3D-MM as), it contains the abundant NVM chip that piles up mutually, externally size and memory capacity aspect all are better than the micro harddisk same period thereby make it.
Summary of the invention
Fundamental purpose of the present invention provides a kind of three-dimensional memory module (being 3D-MM), and externally size and memory capacity aspect all are better than the micro harddisk same period for it.
Another object of the present invention provide that a kind of external dimensions is not more than and memory capacity greater than the three-dimensional memory module of the micro harddisk same period.
Another object of the present invention provides a kind of three-dimensional memory module based on three-dimensional storage (3D-M) (i.e. (3D)
2-MM), it not only externally size and memory capacity aspect be better than the micro harddisk same period, and on production cost, be lower than the micro harddisk same period
Another object of the present invention provides a kind of three-dimensional memory module based on three-dimensional masking film program storer (3D-MPM) (i.e. (3D)
2-MPMM), it be the video data storehouse of multimedia database-especially-ideal carrier.
According to these and other purpose, the invention provides a kind of three-dimensional memory module (being 3D-MM) that is better than the micro harddisk same period, it is characterized in that containing: a plurality of storage chips, comprising at least two storage chips that pile up mutually; The memory capacity sum of all storage chips is greater than the memory capacity of the micro harddisk same period among this 3D-MM, and the external dimensions of this 3D-MM is not more than the micro harddisk same period.
Particularly, the capacity of supposing each storage chip among the 3D-MM is S
i(i=1,2...N), the memory capacity S of this 3D-MM
3D-MMBe all storage chip capacity sums wherein, and should be greater than the capacity S of the micro harddisk same period
CMD, promptly
S
3D-MM＝∑S
i(i＝1，2，...N)>S
CMD。
If each storage chip is all identical among the 3D-MM, then the chip-count of 3D-MM should be greater than the micro harddisk capacity S same period
CMDWith storage chip capacity S
DieRatio, that is:
N>S
CMD/S
die。
The present invention also provide a kind of be better than the micro harddisk same period, based on the three-dimensional memory module (i.e. (3D) of three-dimensional storage (3D-M)
2-MM), it is characterized in that containing: a plurality of storage chips, comprising at least two 3D-M chips that pile up mutually, this 3D-M chip contains a plurality of accumulation layers of piling up mutually; Be somebody's turn to do (3D)
2The memory capacity sum of all storage chips is somebody's turn to do (3D) greater than the memory capacity of the micro harddisk same period among the-MM
2The external dimensions of-MM is not more than the micro harddisk same period.
(3D)
2(3D) among-MM
2Double implication is arranged: it at first carries out a plurality of accumulation layers three-dimensional (3D) and piles up increasing the memory capacity of storage chip, and then a plurality of 3D-M chips is carried out three-dimensional (3D) pile up to increase the memory capacity of memory module.According to table 2, in order to surpass the memory capacity of the micro harddisk same period, (3D)
2-MM at most only needs 2 chips.Because required core number is less, (3D)
2-MM more easily makes, and yield rate is higher.Its production cost can hang down～20 dollars (cost of each chip is～10 dollars), is lower than the cost (～50 dollars) of the micro harddisk same period.Generally speaking, (3D)
2-MM not only externally size and memory capacity aspect be better than the micro harddisk same period, and on production cost, be lower than the micro harddisk same period.
A kind of very promising (3D)
2-MM is based on the three-dimensional memory module (i.e. (3D) of three-dimensional masking film program storer (3D-MPM)
2-MPMM), its 3D-M chip is 3D-MPM.Notice that the memory capacity of a 3D-MPM chip has surpassed the micro harddisk same period.The three-dimensional stacked purpose of 3D-MPM chip is not in order to surpass the micro harddisk same period, but the memory bank with vast capacity in the video data storehouse of portable multimedia data bank-especially-provide is provided.At the 50nm node, (3D) of an x8
2-MPMM module ((3D) that promptly contains 8 chips
2-MPMM) can store～128GB, be enough to deposit～250 films.One to two this module is enough to deposit all films of any class film in the movielink movie library (www.movielink.com), as all action movies or all (referring to table 3) such as family's sheets.At the 17nm node, (3D) of an x8
2-MPMM module can be stored～1TB, is enough to deposit all films in the movielink movie library.Clearly, except video data (comprising recreation), (3D)
2-MPMM can also be used to depositing multimedia documents such as digital image, audio data, digital books, digital map.
As can be seen from Table 1, from the quickflashing to 3D-MPM, chip storage capacity increases (increase～3 times from the quickflashing to 3D-EPROM, increase～2.7 times from 3D-EPROM to 3D-MPM), but writability weakens (quickflashing can repeat to write, the 3D-EPROM writable disposable, and 3D-MPM user can not write).Requirement for balance memory capacity and writability, the present invention has further proposed a kind of mixed type 3D-MM, it is characterized in that containing: at least two first and second storage chips that pile up mutually, this first storage chip is three-dimensional storage (3D-M) chip, this 3D-M chip contains a plurality of accumulation layers of piling up mutually, and this second storage chip is different with this first storage chip.The present invention also proposes a kind of mixed type three-dimensional memory module (3D-MM) that is better than the micro harddisk same period, it is characterized in that containing: a plurality of storage chips, and comprising at least two chips that pile up mutually, described a plurality of storage chips contain at least two kinds of different memories; The memory capacity sum of all storage chips is greater than the memory capacity of the micro harddisk same period among this mixed type 3D-MM, and the external dimensions of this mixed type 3D-MM is not more than the micro harddisk same period.As several examples, these two kinds of storeies can be: a) 3D-MPM and quickflashing; B) 3D-MPM and 3D-EPROM; Or c) 3D-EPROM and quickflashing.Mixed type 3D-MM provides the memory bank of a kind of low price, high power capacity and energy data for updating.
Description of drawings
Fig. 1 represents a kind of mobile phone that utilizes storage card to deposit multimedia document;
Fig. 2 is the skeleton view of a kind of three-dimensional storage (3D-M);
Fig. 3 (table 1) is at the different technologies node, relatively the NVM chip and the same period micro harddisk memory capacity;
Fig. 4 (table 2) lists three-dimensional memory module (3D-MM) for surpassing the required minimum chip-count of the micro harddisk memory capacity same period at the different technologies node;
Fig. 5 A-Fig. 5 B is skeleton view and the z-x sectional drawing of a kind of 3D-MM of displacement;
Fig. 6 A-Fig. 6 B is z-x sectional drawing and the top view of a kind of 3D-MM of rotation;
Fig. 7 represents the 3D-MM that a kind of chip separates;
Fig. 8 represents the 3D-MM of a kind of convertible bonding of employing (flip-bonded);
Fig. 9 represents a kind of 3D-MM that adopts multiple bonding;
Figure 10 represents the 3D-MM of a kind of employing saturating silicon passway (through-silicon via);
Figure 11 A-Figure 11 B is z-x and the y-z sectional drawing of a kind of employing edge contact (edge contacted) 3D-MM;
Figure 12 represents the 3D-MM of the convertible bonding of a kind of two-sided employing;
Figure 13 represents the 3D-MM of a kind of two-sided employing lead-in wire bonding (wire-bonded);
Figure 14 represents a kind of 3D-MM that contains 5 storage chips;
Figure 15 represents a kind of multi-functional 3D-MM;
Figure 16 A-Figure 16 B represents two kinds of 3D-MM that adopt encapsulation stacking (package stacking);
Figure 17 is the sectional drawing of a kind of three-dimensional masking film program storer (3D-MPM);
Figure 18 (table 3) be listed in several popular movies classes in the movielink movie library the film number, they storage capacity requirement and deposit the required x8 of such film (3D)
2-MPMM number of modules (at 50nm and 17nm node).
Embodiment
The invention provides a kind of three-dimensional memory module (being 3D-MM), it is being better than the micro harddisk same period aspect memory capacity and the external dimensions.Particularly, its external dimensions is not more than the micro harddisk same period, and memory capacity is greater than the micro harddisk same period.3D-MM contains the individual storage chip of N (〉=2).Because these chips pile up mutually, the area of 3D-MM is suitable with a chip (generally to be not more than 25mm * 25mm).In addition,, can reduce the thickness of 3D-MM, as the 3D-MM thickness that contains 8 stacked chips can be thinned to 1.2mm by the chip that will pile up is polished wear down.Correspondingly, the external dimensions of 3D-MM can be restricted to the size of the micro harddisk same period, i.e. 40mm * 30mm * 5mm at an easy rate.
In 3D-MM, the capacity of supposing each storage chip is S
i(i=1,2...N), the memory capacity S of this 3D-MM
3D-MMBe all storage chip capacity sums wherein, and should be greater than the capacity S of the micro harddisk same period
CMD, promptly
S
3D-MM＝∑S
i(i＝1，2，...N)>S
CMD。
If each storage chip is all identical among the 3D-MM, then the chip-count of 3D-MM should be greater than the micro harddisk capacity S same period
CMDWith storage chip capacity S
DieRatio, that is:
N>S
CMD/S
die。
Table 2 is listed 3D-MM for surpassing the required minimum chip-count of the micro harddisk memory capacity same period at the different technologies node.Because semiconductor memory and hard-disc storage density are almost with identical speed increment, this numeral (being minimum chip-count) is almost constant.In general, quickflashing needs 5-6 chip, and 3D-EPROM needs 2 chips.On the other hand, because the memory capacity of 3D-MPM chip is greater than micro harddisk, 3D-MM only needs the 3D-MPM chip just can be above the micro harddisk same period on memory capacity.
Among the present invention, based on the three-dimensional memory module of three-dimensional storage (3D-M) be otherwise known as (3D)
2-MM.(3D)
2Among-the MM (3D)
2Double implication is arranged: it at first carries out a plurality of accumulation layers three-dimensional (3D) and piles up increasing the memory capacity of storage chip, and then a plurality of 3D-M chips is carried out three-dimensional (3D) pile up to increase the memory capacity of memory module.According to table 2, in order to surpass the memory capacity of the micro harddisk same period, (3D)
2-MM at most only needs 2 chips.Because required core number is less, (3D)
2-MM more easily makes, and yield rate is higher.Its production cost can hang down～20 dollars (cost of each chip is～10 dollars), is lower than the cost (～50 dollars) of the micro harddisk same period.Generally speaking, (3D)
2-MM not only externally size and memory capacity aspect be better than the micro harddisk same period, and on production cost, be lower than the micro harddisk same period.
Fig. 5 A-Figure 13 represents the multiple structure that is better than the micro harddisk three-dimensional memory module same period (3D-MM).They can be divided into: and single face 3D-MM (Fig. 5-Figure 11) and two-sided 3D-MM (Figure 12-Figure 13).For being familiar with this professional personage, except these structures, 3D-MM can also adopt other structures, as chip-in-polymer structure etc.Relevant chip-stacked more details can be with reference to " Future ICs GoVertical ", P.Garrou work, " Semiconductor International " magazine phase in February, 2005.
Fig. 5 A-Fig. 5 B represents a kind of displacement 3D-MM.It contains two storage chip 100a, 100b.The circuit face of these two chips is (i.e. edge+z direction) all up.Chip 100a is stacked on the substrate 130.Substrate 130 can be printed circuit board (PCB) (PCB), storage card, lead frame (lead frame), TAB (tapeautomated bonding) adhesive tape etc.Chip 100b is stacked on the chip 100a, and the displacement of edge-x direction, thereby exposes the contact mat 102a of chip 100a.Like this, by lead-in wire 110b, 110a, chip 100a can realize being electrically connected with chip 100b and substrate 130.Notice that binder 120 binds chip 100a on substrate 130, and chip 100b is binded on chip 100a.Chip stack (containing 100a, 100b) is loaded in protectiveness encapsulation 140 (as the moulding compounds) at last.
Fig. 6 A-Fig. 6 B represents a kind of rotation 3D-MM.Different with Fig. 5 A-Fig. 5 B is that its plunger tip sheet 100b edge+z axle rotates, thereby exposes the contact mat 102a of chip 100a.Like this, chip 100a can realize being electrically connected with chip 100b and substrate 130.
Fig. 7 represents the 3D-MM that a kind of chip separates.In this embodiment, diffusion barrier (spacer) 122 separates chip 100a, 100b, thereby produces enough feed-through collar height (loop height), makes chip 100a realize being electrically connected with chip 100b and substrate 130.
Fig. 8 represents a kind of 3D-MM that adopts convertible bonding.Different with Fig. 5-Fig. 7, the circuit face of its chip 100a, 100b is (i.e. edge-z direction) down. Chip 100b, 100a realize being electrically connected with chip 100a, substrate 130 by soldered ball (solder ball) 112b, 112a respectively.
Fig. 9 represents a kind of 3D-MM that adopts multiple bonding.The circuit face of its plunger tip sheet 100b is (i.e. edge+z direction) up, and realizes being electrically connected with substrate 130 by lead-in wire 110b.On the other hand, circuit face (i.e. edge-z direction) down at the bottom of its end chip 100a, and be electrically connected with substrate 130 realizations by soldered ball 112a.
Figure 10 represents the 3D-MM of a kind of employing saturating silicon passway (through-silicon via).The circuit face of chip 100a, 100b (all faces upward or downward) all in the same direction.Saturating silicon passway 114 penetrates the chip 110a, the 110b that pile up and connects to realize internal electrical.Like this, chip 100a, 100b can realize being electrically connected with substrate 130.
Figure 11 A-Figure 11 B represents a kind of 3D-MM that adopts edge contact.Chip 100a, 100b at first are aligned, pile up, and this chip stack is polished then, are exposed up to contact mat 106b, 106a.Afterwards, form metal connecting line at the chip stack edge, thereby make chip 100a, 100b realize being electrically connected with substrate 130.
The embodiment of Fig. 5 A-Figure 11 B is single face 3D-MM, and promptly all chip stack all are positioned at the one side of substrate 130.Figure 12-Figure 13 represents two two-sided 3D-MM, and promptly chip is positioned at the two sides of substrate 130.
Figure 12 represents the 3D-MM of the convertible bonding of a kind of two-sided employing.The circuit face of chip 100a is (i.e. edge-z direction) down, and it realizes being electrically connected with substrate 130 by soldered ball 112a.On the other hand, the circuit face of chip 100b is (i.e. edge+z direction) up, and realizes being electrically connected with substrate 130 by soldered ball 112b.
Figure 13 represents a kind of 3D-MM of two-sided employing lead-in wire bonding.The circuit face of chip 100a is (i.e. edge+z direction) up, and it realizes being electrically connected with substrate 130 by lead-in wire 110a.On the other hand, the circuit face of chip 100b is (i.e. edge-z direction) down, and realizes being electrically connected with substrate 130 by lead-in wire 110b.
In Fig. 5 A-Figure 13, each 3D-MM contains two chips.This structure is suitable for being better than (3D) of the micro harddisk same period
2-MM (as 3D-MM, referring to table 2) based on 3D-EPROM.For the quickflashing 3D-MM 3D-MM of quickflashing (promptly based on) or reinforced (3D)
2-MM (is (3D) that memory capacity further strengthens
2-MM), 3D-MM need contain more multicore sheet.Figure 14 represents a kind of 3D-MM based on quickflashing.It is a kind of displacement 3D-MM (referring to Fig. 5 A-Fig. 5 B), and contains 5 flash chip 100a-100e that pile up.So the multicore sheet is enough to make the 3D-MM based on quickflashing to surpass the micro harddisk same period on memory capacity.Similarly, the 3D-MM structure among Fig. 6 A-Figure 13 can be further extended, and makes them can hold more multicore sheet, thereby realizes quickflashing 3D-MM or reinforced (3D)
2-MM.
Except storage chip, 3D-MM can also contain logic/analog chip.The present invention also proposes a kind of multi-functional 3D-MM.It contain at least two storage chips that pile up and at least one logic/analog chip ("/" expression here, " and/or " relation).Figure 15 represents a kind of multi-functional 3D-MM.It contains two storage chip 100a, 100b that pile up and one logic/analog chip 108 and piles up mutually.Logic/analog chip 108 is handled canned data among storage chip 100a, the 100b.It can be a memory controller, and converts storer output to a standard format, as CF form, SD form.Logic/analog chip 108 can also contain a decipher, a demoder and number/simulation (D/A) converter.This design is particularly suitable for the situation that multimedia document is encrypted, compress and need copyright protection.Memory chip stores is encrypted, the multimedia document of compression, and logic/analog chip 108 is deciphered data, raise the price and converts them to simulation output.Because simulating signal is difficult to be duplicated by " ideally ", this embodiment provides good copyright protection for its data of depositing.The details of relevant copyright protection can be referring to U.S. Patent application " Tamper-proof content-playbacksystem offering excellent copyright protection ", application number: 10/906,609.
Except chip-stacked (die stacking), 3D-MM can also use encapsulation stacking (packagestacking).Figure 16 A-Figure 16 B represents two kinds of 3D-MM that adopt encapsulation stacking.In Figure 16 A, 3D-MM contains two encapsulation 152a, 152b: the first encapsulation 152a adopts convertible being bonded on the substrate 150 by soldered ball 154; The second encapsulation 152b is positioned on the first encapsulation 152a, and is fixed on the substrate 150 by long wing shape lead-in wire (longgull-wing leads) 156.Notice that each encapsulation 152a, 152b all can contain a plurality of chips that pile up mutually.Figure 16 B and Figure 16 A difference be, the second encapsulation 152b adopts on the convertible another side that is bonded in substrate 150 by soldered ball 154b.For person skilled in the art scholar, 3D-MM can also use other encapsulation stacking structure.
A kind of very promising (3D)
2-MM is based on the three-dimensional memory module (i.e. (3D) of three-dimensional masking film program storer (3D-MPM)
2-MPMM), its 3D-M chip is 3D-MPM.It contains a plurality of 3D-MPM chips that pile up mutually.For the personage who is not familiar with 3D-MPM, Figure 17 has described a kind of 3D-MPM chip.Its memory heap 60 is stacked on the substrate 30, and contains 4 accumulation layer 60A-60D.With accumulation layer 60D is example, and it contains word line 74a, bit line 82a-82d and information medium 68.Storage element 94a-94d is positioned at the infall of word line and bit line.The coverage of information medium 68 pairs of bit line determines the digital code information of this storage element storage.This embodiment has four kinds of coverages: do not have covering (storage element 94a), 1/3 and cover (storage element 94d), 2/3 covering (storage element 94b) and all standing (storage element 94c).Correspondingly, this 3D-MPM is one 4 system storer, and its storage element is multilayer storage element (multi-level cell abbreviates MLC as), 2 information of each storage element storage.Accumulation layer 60A-60D piles up mutually and intersects mutually, and promptly same address wire (as 72a) is shared by two-layer accumulation layer (as 60C, 60B).
3D-MPM memory capacity is (be quickflashing 8 times) greatly, and the memory capacity of a 3D-MPM chip is above the micro harddisk same period.The three-dimensional stacked purpose of 3D-MPM chip is not in order to surpass the micro harddisk same period, but the memory bank with vast capacity in the video data storehouse of portable multimedia data bank-especially-provide is provided.
(need～8GB), it is nowhere near as the memory bank in video data storehouse 2000 first songs though flash memory is enough to deposit the portable audio data bank.Table 3 is listed in the film number of several popular movies classes among movie library such as the movielink (www.movielink.com) (as action movie or family's sheet).Most of as can be seen popular movies classes contain at least 200 films.Consider every film needs～0.5GB, a common video data bank needs～the 100GB storage space at least.At the 50nm node, an x8 (3D)
2-MPMM module ((3D) that promptly contains 8 chips
2-MPMM) can store～128GB, be enough to deposit～250 films.One to two this module is enough to deposit all films of any class film in the movielink movie library, as all action movies or all (referring to table 3) such as family's sheets.At the 17nm node, an x8 (3D)
2-MPMM module can be stored～1TB, is enough to deposit all films in the movielink movie library.Clearly, except video data (comprising recreation), (3D)
2-MPMM can also be used to depositing multimedia documents such as digital image, audio data, digital books, digital map.
As can be seen from Table 1, from the quickflashing to 3D-MPM, chip storage capacity increases (increase～3 times from the quickflashing to 3D-EPROM, increase～2.7 times from 3D-EPROM to 3D-MPM), but writability weakens (quickflashing can repeat to write, the 3D-EPROM writable disposable, and 3D-MPM user can not write).Requirement for balance memory capacity and writability, the present invention has further proposed a kind of mixed type 3D-MM, it is characterized in that containing: at least two first and second storage chips that pile up mutually, this first storage chip is three-dimensional storage (3D-M) chip, this 3D-M chip contains a plurality of accumulation layers of piling up mutually, and this second storage chip is different with this first storage chip.The present invention also proposes a kind of mixed type three-dimensional memory module (3D-MM) that is better than the micro harddisk same period, it is characterized in that containing: a plurality of storage chips, and comprising at least two chips that pile up mutually, described a plurality of storage chips contain at least two kinds of different memories; The memory capacity sum of all storage chips is greater than the memory capacity of the micro harddisk same period among this mixed type 3D-MM, and the external dimensions of this mixed type 3D-MM is not more than the micro harddisk same period.As several examples, these two kinds of storeies can be: a) 3D-MPM (as the encapsulation 152a among the chip 100a among Fig. 5 A Figure 15 or Figure 16 A-Figure 16 B) and quickflashing (as the encapsulation 152b among the chip 100b among Fig. 5 A-Figure 15 or Figure 16 A-Figure 16 B); B) 3D-MPM and 3D-EPROM; Or c) 3D-EPROM and quickflashing.Mixed type 3D-MM provides the memory bank of a kind of low price, high power capacity and energy data for updating.
Though above instructions has specifically described examples more of the present invention, those skilled in the art should understand, under prerequisite not away from the spirit and scope of the present invention, can change form of the present invention and details, this does not hinder them to use spirit of the present invention.Therefore, except the spirit according to additional claims, the present invention should not be subjected to any restriction.
Claims (10)
1. three-dimensional memory module (3D-MM) that is better than the micro harddisk same period is characterized in that containing:
A plurality of storage chips are comprising at least two storage chips that pile up mutually;
The memory capacity sum of all storage chips is greater than the memory capacity of the micro harddisk same period among this 3D-MM, and the external dimensions of this 3D-MM is not more than the micro harddisk same period.
One kind be better than the micro harddisk same period, based on the three-dimensional memory module ((3D) 2-MM) of three-dimensional storage (3D-M), it is characterized in that containing:
A plurality of storage chips, comprising at least two 3D-M chips that pile up mutually, this 3D-M chip contains a plurality of accumulation layers of piling up mutually;
Be somebody's turn to do (3D)
2The memory capacity sum of all storage chips is somebody's turn to do (3D) greater than the memory capacity of the micro harddisk same period among the-MM
2The external dimensions of-MM is not more than the micro harddisk same period.
3. according to the described three-dimensional memory module of claim 1-2 (3D-MM), its feature also is: all storage chips are all identical among this 3D-MM, and the core number of this 3D-MM is greater than the ratio of same period micro harddisk memory capacity and chip storage capacity.
4. a mixed type three-dimensional memory module (3D-MM), it is characterized in that containing: at least two first and second storage chips that pile up mutually, this first storage chip is three-dimensional storage (3D-M) chip, this 3D-M chip contains a plurality of accumulation layers of piling up mutually, and this second storage chip is different with this first storage chip.
5. according to claim 2 and 4 described three-dimensional memory modules (3D-MM), its feature also is: this 3D-M chip is a three-dimensional masking film program storer (3D-MPM) or three-dimensional electric programming read-only memory (3D-EPROM).
6. according to the described three-dimensional memory module of claim 1-4 (3D-MM), its feature also is to contain: at least one flash chip.
7. mixed type three-dimensional memory module (3D-MM) that is better than the micro harddisk same period is characterized in that containing:
A plurality of storage chips, comprising at least two chips that pile up mutually, described a plurality of storage chips contain at least two kinds of different memories;
The memory capacity sum of all storage chips is greater than the memory capacity of the micro harddisk same period among this mixed type 3D-MM, and the external dimensions of this mixed type 3D-MM is not more than the micro harddisk same period.
8. according to the described three-dimensional memory module of claim 1-7 (3D-MM), its feature also is: described storage chip is deposited multimedia document or portable video data bank.
9. according to the described three-dimensional memory module of claim 1-7 (3D-MM), its feature also is to contain:
One contains first encapsulation of at least one described storage chip; With
One contains second encapsulation of another described storage chip at least, and this second encapsulation stacking is in this first encapsulation top.
10. according to the described three-dimensional memory module of claim 1-7 (3D-MM), its feature also is to contain:
One handle deposit in the logic/analog chip of information in the fast storage chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101287428A CN101136250A (en) | 2006-09-02 | 2006-09-02 | Three-dimensional storage module better than synchronization micro-bracket |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101287428A CN101136250A (en) | 2006-09-02 | 2006-09-02 | Three-dimensional storage module better than synchronization micro-bracket |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101136250A true CN101136250A (en) | 2008-03-05 |
Family
ID=39160279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101287428A Pending CN101136250A (en) | 2006-09-02 | 2006-09-02 | Three-dimensional storage module better than synchronization micro-bracket |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101136250A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246745B (en) * | 2007-02-14 | 2012-11-07 | 张国飙 | Three-dimensional memory module(3D2-M2) based on three-dimensional memory |
| WO2014134865A1 (en) * | 2013-03-06 | 2014-09-12 | Zhang Guobiao | Three-dimensional memory comprising independent intermediate circuit chip |
| WO2020119511A1 (en) * | 2018-12-10 | 2020-06-18 | 杭州海存信息技术有限公司 | Separated three-dimensional processor |
-
2006
- 2006-09-02 CN CNA2006101287428A patent/CN101136250A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246745B (en) * | 2007-02-14 | 2012-11-07 | 张国飙 | Three-dimensional memory module(3D2-M2) based on three-dimensional memory |
| WO2014134865A1 (en) * | 2013-03-06 | 2014-09-12 | Zhang Guobiao | Three-dimensional memory comprising independent intermediate circuit chip |
| WO2020119511A1 (en) * | 2018-12-10 | 2020-06-18 | 杭州海存信息技术有限公司 | Separated three-dimensional processor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12113054B2 (en) | Non-volatile dynamic random access memory | |
| CN103021444B (en) | Storage device | |
| US7952904B2 (en) | Three-dimensional memory-based three-dimensional memory module | |
| US6765813B2 (en) | Integrated systems using vertically-stacked three-dimensional memory cells | |
| CN104321863B (en) | Package substrate with multiple tube cores | |
| CN102486931B (en) | Multichannel semiconductor memory system and include the semiconductor device of this device | |
| CN102216997B (en) | Stacked semiconductor devices including a master device | |
| CN103946980B (en) | Allow the cellar of the change in device interconnecting | |
| US9355976B2 (en) | Semiconductor memory chips and stack-type semiconductor packages including the same | |
| US8514653B2 (en) | Multi-layered memory devices | |
| US20110161583A1 (en) | Memory card and memory system including semiconductor chips in stacked structure | |
| CN106504782A (en) | For improving the semiconductor memory system and semiconductor system of signal integrity | |
| CN106356087A (en) | Semiconductor memory device having adaptive page size control | |
| CN104576546A (en) | Semiconductor package and method of fabricating the same | |
| US9959910B2 (en) | Offset-printing method for three-dimensional printed memory | |
| CN102683331A (en) | Side-mounted controller and methods for making the same | |
| CN104051410B (en) | Semiconductor devices and semiconductor packages | |
| JP2007183776A (en) | Semiconductor device | |
| CN101136250A (en) | Three-dimensional storage module better than synchronization micro-bracket | |
| CN1625738B (en) | Packaged combination memory for electronic devices | |
| CN103871980B (en) | Semiconductor package part and the method for routed encapsulation part | |
| JPS59193596A (en) | Ic module for ic card | |
| CN209312764U (en) | The non-hermetically sealed three-dimension packaging eeprom memory that a kind of capacity is 1M × 8bit | |
| US20110019459A1 (en) | Three-Dimensional Mask-Programmable Read-Only Memory with Reserved Space | |
| CN105742277B (en) | A kind of large-volume stereo integrates SRAM memory three-dimensional extended method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080305 |