CN101131998A - Conductor screening pattern and semiconductor structure with inductance element - Google Patents
Conductor screening pattern and semiconductor structure with inductance element Download PDFInfo
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- CN101131998A CN101131998A CNA2006101215557A CN200610121555A CN101131998A CN 101131998 A CN101131998 A CN 101131998A CN A2006101215557 A CNA2006101215557 A CN A2006101215557A CN 200610121555 A CN200610121555 A CN 200610121555A CN 101131998 A CN101131998 A CN 101131998A
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Abstract
The present invention discloses a conductor shielding pattern to be applied in shielding inductive component. The conductor shielding pattern includes several conductor layers and diffusion regions. The conductor layers are located on substrate, and the diffusion regions are located in substrate. The each conductor layer and the each diffusion region are set in interval, and the conductor layers and diffusion regions are all open.
Description
Technical field
The present invention relates to semiconductor structure, and the semiconductor structure that is particularly related to conductor screening pattern (shielding pattern) and has inductance element (inductor device).
Background technology
In integrated circuit, inductance element is a kind of important element, and these inductance element patterns are generally circular or square helical metal coil, and the range of application of these inductance elements is considerably extensive.With regard to the frequency applications field, this field is higher to the quality requirement of inductance element, and the inductance element that promptly is applied in this field has higher quality factor Q value.Above-mentioned Q value is defined as follows:
Q＝ω
0×L/R (1)
ω wherein
0Be the resonant angular frequency (resonant angular frequency) of inductance element, R is the resistance of inductance element, and L is the inductance value of wire coil.Because inductance element is mostly very near silicon base, therefore under the high-frequency of using high-frequency component, silicon base can become conductor and cause consuming lot of energy and the quality of inductance element is reduced.
So, be quality and its Q value that addresses the above problem and promote inductance element, develop and a kind of method, be to utilize the screen effect of conductor layer to intercept substrate and inductance element, as U.S. Pat 5,760,456.In this part patent, mention, because there is one deck to be positioned at conductor layer between inductance element and substrate, so can get rid of substrate resistance (resistance) R
SubTo the influence of inductance element,, replace R effectively simultaneously by low resistance path from the electric field termination (termination) on the conductor layer to substrate ground connection (ground)
Sub
Yet, because present inductance element pattern adopts helical form mostly, so in conductor layer, bring out vortex flow (eddy current) easily.Thing followed problem is exactly when conductor layer during very near inductance element, vortex flow in the conductor layer can hinder and offset the magnetic field that the helical form inductance element is produced, cause the inductance (inductance) of helical form inductance element to reduce, and thereby increase parasitic capacitance (parasiticcapacitance) C
Ox
Therefore, U.S. Pat 5,760,456 propose the another kind of conductive pattern that prevents that vortex flow from producing again.This conductive pattern is for irregular pattern or do not become the pectination pattern in loop with whole conductor layer improvement originally.
Recently, develop a kind of design that utilizes conductor screening pattern to intercept inductance element and silicon base again, as U.S. Pat 6,593,838, Fig. 1 proposes to be used for the structure vertical view of a kind of conductor screening pattern of inductance element for this piece patent.
Please refer to Fig. 1, U.S. Pat 6,593,838 conductor screening pattern 100 is a kind of individual layer conductive patterns that are clipped between inductance element and the silicon base, and its design is based on radial structure, and conductor screening pattern 100 only has a plotted point 110 in pattern central authorities, is closed loop and do not have any circuit.
In addition, in U.S. Pat 6,593, have in 838 and mention double-deck conductor screening pattern, as Fig. 2 A, 2B and 2C, it is the another kind of structure vertical view that is used for the conductor screening pattern of inductance element.
Please refer to Fig. 2 A, the conductor screening pattern of this bilayer be earlier with cross conductor material as trunk 200.Then, please refer to Fig. 2 B, can select separated another kind of conductor material to prop up and do 210 as radiation.Perhaps, please refer to Fig. 2 C, the another kind of conductor material of selecting to be connected central plotted point 220 props up dried 230 as radiation.
Quality and its Q value in order further to promote inductance element but, the structure of above-mentioned conductor screening pattern also has the space of improvement.
Summary of the invention
Purpose of the present invention is providing a kind of conductor screening pattern exactly, can promote quality and its Q value of inductance element.
A further object of the present invention provides a kind of semiconductor structure with inductance element, possesses higher Q value.
The present invention proposes a kind of conductor screening pattern, is used to shield inductance element.This conductor screening pattern comprises many conductor layers and diffusion region.Conductor layer is positioned in the substrate, and the diffusion region then is positioned at substrate, wherein each conductor layers and each the bar diffusion region configuration that intermeshes, and these conductor layers and diffusion region are open end (free end).
Described according to a preferred embodiment of the invention conductor screening pattern, the configuration mode of above-mentioned conductor layer and diffusion region can be edge-to-edges (edge to edge), spaced a certain distance or overlap in twos.
Described according to a preferred embodiment of the invention conductor screening pattern, the material of above-mentioned conductor layer comprises polysilicon or metal, for example copper, gold, nickel, aluminium, tungsten etc.
Described according to a preferred embodiment of the invention conductor screening pattern also comprises first plain conductor and second plain conductor.First plain conductor is positioned on the conductor layer and connects every conductor layers; Second plain conductor then is positioned on the diffusion region and connects each diffusion region.Wherein the pattern formed of the conductor layer and coupled first plain conductor is the open end, and the pattern that diffusion region and the second coupled plain conductor are formed also all is the open end.
The present invention also proposes a kind of semiconductor structure with inductance element, comprises substrate, inductance element, conductor screening pattern and insulating barrier.Inductance element is positioned in the substrate, and conductor screening pattern then is positioned under the inductance element, is used to shield above-mentioned inductance element, and wherein conductor screening pattern comprises many conductor layers and diffusion region.And conductor layer is positioned in the substrate, and the diffusion region then is positioned at substrate, wherein each conductor layers and each the bar diffusion region configuration that intermeshes, and these conductor layers and diffusion region are the open end.In addition, insulating barrier is between conductor screening pattern and inductance element.
According to the described semiconductor structure of the preferred embodiment of the present invention, above-mentioned inductance element comprises round screw thread formula inductance element or square screw type inductive element.
According to the described semiconductor structure of the preferred embodiment of the present invention, the configuration mode of above-mentioned conductor layer and diffusion region can be edge-to-edge, spaced a certain distance or overlap in twos.
According to the described semiconductor structure of the preferred embodiment of the present invention, the material of above-mentioned conductor layer comprises polysilicon or metal, for example copper, gold, nickel, aluminium, tungsten etc.
According to the described semiconductor structure of the preferred embodiment of the present invention, also comprise many strip metals lead, lay respectively on conductor layer and the diffusion region and difference bonding conductor layer and diffusion region.Wherein, the pattern that conductor layer and coupled plain conductor are formed is the open end, and the pattern that diffusion region and coupled plain conductor are formed also all is the open end.
Therefore conductor layer that the present invention disposes because of employing intermeshes and diffusion region can further reduce silicon base the magnetic conduction that inductance element caused is disturbed, to improve chip usefulness as the conductor screening pattern of shielding inductance element.Simultaneously, this conductor screening pattern can produce vortex flow hardly, thus can avoid the inductance of inductance element to reduce, and reduce parasitic capacitance.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the structure vertical view that becomes known for a kind of conductor screening pattern of inductance element.
Fig. 2 A to Fig. 2 C is the structure vertical view that becomes known for the another kind of conductor screening pattern of inductance element.
Fig. 3 A is the structure vertical view of a kind of conductor screening pattern according to one preferred embodiment of the present invention.
Fig. 3 B is the generalized section of the B-B line segment of Fig. 3 A.
Fig. 3 C is the C part enlarged diagram of Fig. 3 A.
Fig. 4 and Fig. 5 are respectively two kinds of distortion of Fig. 3 B.
Fig. 6 A is the vertical view of a kind of semiconductor structure according to another preferred embodiment of the invention.
Fig. 6 B is the generalized section of the B-B line segment of Fig. 6 A.
Fig. 7 is the frequency of the present invention and other two kinds of known conductor screening patterns and the comparative graph of Q value.
Description of reference numerals
100,300,400,500,620: conductor screening pattern
110,220: plotted point 200: trunk
210,230: prop up and do 302,402,502,622: conductor layer
304,404,504,624: diffusion region 306,640: plain conductor
310,410,510,600: substrate 610: inductance element
630: insulating barrier d: distance
Embodiment
Fig. 3 A is the structure vertical view of a kind of conductor screening pattern according to a preferred embodiment of the invention, and Fig. 3 B is the generalized section of the B-B line segment of Fig. 3 A.And Fig. 3 C is the C part enlarged diagram of Fig. 3 A.
Please be simultaneously with reference to Fig. 3 A, 3B and 3C, the conductor screening pattern 300 of present embodiment is to be used to shield the inductance element (not shown).This conductor screening pattern 300 is to be made of with diffusion region 304 many conductor layers 302 that dispose that intermesh, and the material of above-mentioned conductor layer 302 is for example polysilicon or metal, for example copper, gold, nickel, aluminium, tungsten etc.Conductor layer 302 is positioned in the substrate 310, and diffusion region 304 then is positioned at substrate 310, and wherein conductor layer 302 is open end (free end) with diffusion region 304.In addition, the conductor screening pattern 300 of present embodiment also can comprise many strip metals lead 306, lay respectively on conductor layer 302 and the diffusion region 304 and be connected each conductor layers 302 and each bar diffusion region 304 respectively, and these plain conductors 306 can be the ground floor metal levels (being called " Metal 1 " again) that is used as the lead of grid, source electrode and drain electrode in the present semiconductor subassembly, or the layer of metal layer that adds.And the pattern that these plain conductors 306 and the every conductor layers 302 that connects respectively thereof and diffusion region 304 are formed is the open end equally.In this embodiment, conductor layer 302 is apart from d apart from one another by a bit of with the configuration mode of diffusion region 304.
In addition, please refer to Fig. 4 and Fig. 5, it is respectively two kinds of distortion of Fig. 3 B.In Fig. 4, conductor layer 402 is edge-to-edge (edge to edge) with the preferred deployment of diffusion region 404.And in Fig. 5, conductor layer 502 is to overlap in twos with 504 of diffusion regions.
Fig. 6 A is the vertical view of a kind of semiconductor structure according to another preferred embodiment of the invention, and Fig. 6 B then is the generalized section of the B-B line segment of Fig. 6 A.
Please be simultaneously with reference to Fig. 6 A and Fig. 6 B, the semiconductor structure of this embodiment comprises substrate 600, is positioned at inductance element 610, conductor screening pattern 620 and insulating barrier 630 in the substrate 600, and above-mentioned inductance element 610 is round screw thread formula inductance element as this figure for example or also can is the square screw type inductive element.Conductor screening pattern 620 then is positioned under the inductance element 610, is used to shield above-mentioned inductance element 610, and wherein conductor screening pattern 620 comprises many conductor layers 622 and diffusion region 624.And conductor layer 622 is positioned in the substrate 600, and 624 of diffusion regions are positioned at substrate 600, wherein each conductor layers 622 and each bar diffusion region 624 configuration that intermeshes, and conductor layer 622 and diffusion region 624 are the open end.In addition, insulating barrier 630 is between conductor screening pattern 620 and inductance element 610.In addition, above-mentioned conductor layer 622 can be the edge-to-edge as this figure with the configuration mode of diffusion region 624; Perhaps spaced a certain distance or overlap in twos.
For confirming that structure of the present invention truly has its effect, asks for an interview Fig. 7.Fig. 7 is the present invention (as Fig. 3 A) and the frequency of other two kinds of known conductor screening patterns and the comparative graph of Q value.Wherein, other two kinds of conductor screening patterns as shown in Figure 3A, but a kind of be only with conductor screening pattern, the another kind of homogenous material (polysilicon) then be only the usefulness diffusion region as conductor screening pattern.
As can be seen from Figure 7, the highest Q value of the present invention is higher than other two kinds of the highest Q values of only using the conductor screening pattern of homogenous material.Therefore, the present invention can further improve the Q value of inductance element really.
In sum, in conductor screening pattern of the present invention,, therefore not only can reduce substrate the magnetic conduction that inductance element causes is disturbed, to improve the Q value of inductance element because of conductor layer and the diffusion region that employing intermeshes and disposes; Simultaneously, this conductor screening pattern can produce vortex flow hardly, thus can avoid the inductance of inductance element to reduce, and reduce parasitic capacitance.
Though disclosed the present invention as described above by preferred embodiment; but these preferred embodiments are not to be used to limit the present invention; those skilled in the art; under the situation that does not break away from the spirit and scope of the present invention; change that Ying Kezuo is trickle and retouching, so protection scope of the present invention should be as the criterion by claims person's of defining scope.
Claims (15)
1. a conductor screening pattern is used to shield inductance element, and this conductor screening pattern comprises:
Many conductor layers are positioned in the substrate; And
Many diffusion regions are positioned at described substrate, wherein each described conductor layer and each the described diffusion region configuration that intermeshes, and described conductor layer and described diffusion region are the open end.
2. conductor screening pattern as claimed in claim 1, wherein the configuration mode of each described conductor layer and each described diffusion region is the edge-to-edge.
3. conductor screening pattern as claimed in claim 1, wherein each described conductor layer and each described diffusion region are spaced a certain distance.
4. conductor screening pattern as claimed in claim 1, wherein each described conductor layer and each described diffusion region overlap.
5. conductor screening pattern as claimed in claim 1, the material of wherein said conductor layer comprises polysilicon or metal.
6. conductor screening pattern as claimed in claim 5, the material of wherein said conductor layer comprises copper, gold, nickel, aluminium or tungsten.
7. conductor screening pattern as claimed in claim 1 also comprises:
First plain conductor is positioned on the described conductor layer, and connects described conductor layer, and the pattern of described conductor layer and described first plain conductor composition is the open end; And
Second plain conductor is positioned on the described diffusion region, and connects described diffusion region, and the pattern of described diffusion region and described second plain conductor composition is the open end.
8. semiconductor structure with inductance element comprises:
Substrate;
Inductance element is positioned in the described substrate;
Conductor screening pattern is positioned under the described inductance element, is used to shield described inductance element, and wherein said conductor screening pattern comprises:
Many conductor layers; And
Many diffusion regions are positioned at described substrate, wherein each described conductor layer and each the described diffusion region configuration that intermeshes, and described conductor layer and described diffusion region are the open end;
Insulating barrier is between described conductor screening pattern and described inductance element.
9. the semiconductor structure with inductance element as claimed in claim 8, wherein said inductance element comprise round screw thread formula inductance element or square screw type inductive element.
10. the semiconductor structure with inductance element as claimed in claim 8, wherein the configuration mode of each described conductor layer and each described diffusion region is the edge-to-edge.
11. the semiconductor structure with inductance element as claimed in claim 8, wherein each described conductor layer and each described diffusion region are spaced a certain distance.
12. the semiconductor structure with inductance element as claimed in claim 8, wherein each described conductor layer and each described diffusion region overlap.
13. the semiconductor structure with inductance element as claimed in claim 8, the material of wherein said conductor layer comprises polysilicon or metal.
14. the semiconductor structure with inductance element as claimed in claim 13, the material of wherein said conductor layer comprises copper, gold, nickel, aluminium or tungsten.
15. the semiconductor structure with inductance element as claimed in claim 8 also comprises:
First plain conductor is positioned on the described conductor layer, and connects described conductor layer, and the pattern of described conductor layer and described first plain conductor composition is the open end; And
Second plain conductor is positioned on the described diffusion region, and connects described diffusion region, and the pattern of described diffusion region and described second plain conductor composition is the open end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101215557A CN101131998A (en) | 2006-08-22 | 2006-08-22 | Conductor screening pattern and semiconductor structure with inductance element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101215557A CN101131998A (en) | 2006-08-22 | 2006-08-22 | Conductor screening pattern and semiconductor structure with inductance element |
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| CN101131998A true CN101131998A (en) | 2008-02-27 |
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| CNA2006101215557A Pending CN101131998A (en) | 2006-08-22 | 2006-08-22 | Conductor screening pattern and semiconductor structure with inductance element |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956622A (en) * | 2012-11-29 | 2013-03-06 | 上海集成电路研发中心有限公司 | Inductor structure |
| CN104064547A (en) * | 2014-06-26 | 2014-09-24 | 珠海市杰理科技有限公司 | Inductor substrate isolation structure of integrated circuit |
| CN106024340A (en) * | 2016-08-02 | 2016-10-12 | 成都线易科技有限责任公司 | Transformer with shielding structure |
| CN106558401A (en) * | 2015-09-25 | 2017-04-05 | 瑞昱半导体股份有限公司 | The shielding construction of product body inductor/transformer |
| CN110444510A (en) * | 2019-07-02 | 2019-11-12 | 中国航空工业集团公司雷华电子技术研究所 | A kind of silicon based package body |
| CN112242236A (en) * | 2019-07-17 | 2021-01-19 | 三星电机株式会社 | Coil component |
-
2006
- 2006-08-22 CN CNA2006101215557A patent/CN101131998A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956622A (en) * | 2012-11-29 | 2013-03-06 | 上海集成电路研发中心有限公司 | Inductor structure |
| CN102956622B (en) * | 2012-11-29 | 2017-03-15 | 上海集成电路研发中心有限公司 | A kind of induction structure |
| CN104064547A (en) * | 2014-06-26 | 2014-09-24 | 珠海市杰理科技有限公司 | Inductor substrate isolation structure of integrated circuit |
| CN104064547B (en) * | 2014-06-26 | 2017-02-15 | 珠海市杰理科技股份有限公司 | Inductor substrate isolation structure of integrated circuit |
| CN106558401A (en) * | 2015-09-25 | 2017-04-05 | 瑞昱半导体股份有限公司 | The shielding construction of product body inductor/transformer |
| CN106558401B (en) * | 2015-09-25 | 2018-08-10 | 瑞昱半导体股份有限公司 | The shielding construction of product body inductor/transformer |
| CN106024340A (en) * | 2016-08-02 | 2016-10-12 | 成都线易科技有限责任公司 | Transformer with shielding structure |
| CN110444510A (en) * | 2019-07-02 | 2019-11-12 | 中国航空工业集团公司雷华电子技术研究所 | A kind of silicon based package body |
| CN110444510B (en) * | 2019-07-02 | 2021-10-12 | 中国航空工业集团公司雷华电子技术研究所 | Silicon-based packaging body |
| CN112242236A (en) * | 2019-07-17 | 2021-01-19 | 三星电机株式会社 | Coil component |
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