CN101127275B - A making method for high voltage sheet type multi-layer porcelain capacitor - Google Patents
A making method for high voltage sheet type multi-layer porcelain capacitor Download PDFInfo
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- CN101127275B CN101127275B CN200710030282XA CN200710030282A CN101127275B CN 101127275 B CN101127275 B CN 101127275B CN 200710030282X A CN200710030282X A CN 200710030282XA CN 200710030282 A CN200710030282 A CN 200710030282A CN 101127275 B CN101127275 B CN 101127275B
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Abstract
The utility model provides a method for manufacturing high-tension sheet type multilayer porcelain capacitor, and mainly comprises preparing ceramics slurry, manufacturing media film, overprinting inner electrode and media layer alternately, drying briquette, laminating, incising, batching out, sintering, chamfering, end sealing, and end burning; wherein in the process of overprinting inner electrode and media layer alternately, the material of inner electrode is nickel Ni, and the material of end electrode is copper Cu; the process of sintering comprises a batching out section, a high temperature heating section, a preservation section, a cooling section and a tempering section; while the process of end burning comprises a low temperature batching out section, a high temperature batching out section, a high temperature preservation section and a cooling section. The utility model greatly reduces the production cost, and can also achieve the manufacture of high-tension multilayer porcelain capacitor of cheaper nickel electrode.
Description
Technical field
The present invention relates to a kind of manufacture method of ceramic capacitor, more particularly, the present invention relates to a kind of with the high pressure multiple-layer sheet ceramic capacitor manufacture method of nickel as interior electrode.
Background technology
Chip multilayer ceramic capacitor (MLCC) is a kind of new electronic component, is used for the surface mount of consumer electronics complete machines such as communication, computer, household electrical appliance in a large number.Along with global rapid development of surface mount, the output of surface mount component rises rapidly, and the MLCC demand constantly rises.It is interior electrode that at present domestic and international high voltagehigh frequency multilayer sheet type ceramic capacitor (MLCC) all adopts precious metals ag/Pd material, for the high product of some quality requirements even adopt electrode in the full Pd, termination electrode then is Ag, must cause the too high problem of production cost like this.MLCC product sintering in air atmosphere of Ag/Pd system, this technical development time is longer, and technology is comparatively ripe, and the experience of this respect is very abundant both at home and abroad.
Adopt noble metal to mainly contain the advantage of the following aspects as interior electrode:
At first, because inside and outside electrode all adopts inactive noble metal to make, binder removal, sintering and burning end process can be carried out in air, and the ceramic dielectric system of use does not need to have resistance to reduction, so raw-material making is simple relatively;
Secondly, because binder removal carries out in air, oxygen content is abundant, so can finish the binder removal process at lower temperature with in than the short time, operating efficiency is higher relatively, and energy resource consumption is relatively low.
But there are many deficiencies in the MLCC product of Ag/Pd system, mainly shows following several respects:
At first, production cost is higher, owing to adopt precious metals pd/interior electrode of Ag work and precious metals ag to make termination electrode, causes higher production cost;
Chinese patent CN1287547A disclose a kind of with nickel inner electrode with have reproducibility porcelain powder and cooperate the multilayer ceramic capacitor that makes, but this capacitor does not possess high voltage withstanding function.
Summary of the invention
The invention solves the not high voltage bearing problem of multilayer ceramic capacitor of electrode in the Ni.
Technical scheme of the present invention is achieved in that a kind of method of making high-voltage sheet type multilayer ceramic capacitor, mainly by the preparation of porcelain slurry, make the medium diaphragm, replace electrode and dielectric layer in the double exposure, the briquet drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning the end operation forms, in interior electrode of described alternately double exposure and the dielectric layer operation, interior electrode adopts nickel metal Ni to make, termination electrode adopts Cu to make, with adopting Pd/Ag is that the MLCC product of interior electrode is compared, in making of Ni during electrode, its rupture strength is bigger, and this helps resisting the mechanical stress effect when assembling and matrix cutting.In the described termination procedure, termination electrode is metal Cu, and Ni is adjacent with the Cu atomic number, and atomic radius is close, the two easier being combined into one when burning end, and it is good to make that internal and external electrode connects, thereby guarantees that product has good reliability.
Described sintering circuit is made up of binder removal section, intensification high temperature section, soaking zone, temperature descending section, tempering section, and the binder removal section is to contain H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.2～1.5% of total gas flow, temperature by room temperature to T
1The time 1～2 ℃/min of heating rate, 700≤T
1≤ 850 ℃, 6～8 hours binder removal time; The intensification high temperature section is containing H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.8～2.5% of total gas flow, temperature is by T
1Arrive T
2The time 3～7 ℃/min of heating rate, 850 ℃＜T
2≤ 1330 ℃, T
2Temperature retention time during temperature 2～4 hours, intensification high-temperature region are the sintering circuit most criticals, also are the links of particular importance that its technological parameter is mainly realized according to the temperature coupling TMA curve of porcelain and entoplasm.Entoplasm begins 1000 ℃ of shrinkage temperatures in sintering process, 1100 ℃ of the beginning shrinkage temperatures in sintering process of porcelain, and therefore very high in the heating rate requirement of 850 ℃～1330 ℃ of temperature sections to sintering curve, the chip porcelain body does not have crackle behind the sintering.
Described burning end operation is made up of low temperature binder removal section, high temperature binder removal section, soak section and temperature descending section, and wherein low temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content is controlled at 20～300ppm, and temperature is raised to T by room temperature
3Temperature, 700≤T
3≤ 800 ℃, high temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content O
2Content≤10ppm, temperature is by T
3Be raised to T
4Temperature, 800＜T
4≤ 960 ℃.Burn end and adopt the segmented atmosphere protection to burn the end technology, the binder removal section requires to have sufficient oxygen that the macromolecule organic bond is decomposed, and high temperature binder removal section can not be too high, lose electric conductivity because temperature causes the Cu oxidation easily when high; Soak and temperature descending section then require oxygen content to hang down and prevent the Cu oxidation.This cross range request take all factors into consideration the Cu termination electrode can not be oxidized, the organic resin in the Cu end slurry fully gets rid of, the factors such as immersion depth of frit in porcelain body, like this with guarantee end-electrode structure densification, internal and external electrode in conjunction with good, combine closely with ceramic body.
Other porcelain slurry preparation, curtain coating silk-screen, lamination, briquet drying, lamination, cutting, binder removal, chamfering, termination procedure step are that those skilled in the art's common process method can make.
Can produce high voltagehigh frequency chip multilayer ceramic capacitor more than the 1000V with above-mentioned aspect.
Further: the tempering section of described sintering circuit is containing O
2N
2Carry out O under the atmosphere protection
2Content is 8ppm～30ppm.In the preparation of described porcelain slurry, select conventional reproducibility porcelain powder for use, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and the weight ratio of adhesive and porcelain powder is (45～50) %: 1, the weight ratio of plasticizer and porcelain powder is (2～4) %: 1, the weight ratio of dispersant and porcelain powder is (0.1～0.3) %: 1, the weight ratio of defoamer and porcelain powder is (0.1～0.2) %: 1, all the other are mixed solvents of toluene and absolute ethyl alcohol, and toluene: the weight ratio of absolute ethyl alcohol is 0.5～4: 1, and described porcelain powder is sphere or almost spherical, particle diameter is 0.60～0.90um, and the porcelain slurry makes the diaphragm of good dispersion through curtain coating; The position of the deielectric-coating relative thin weakness of chip multilayer ceramic capacitor, discharge breakdown very easily under high pressure, therefore very high to the uniformity requirement of medium diaphragm, like this batching is disperseed just to have higher requirement, with the ceramic dielectric diaphragm that guarantees that making pore-free and impurity, density height, surfacing, powder are evenly distributed; In electrode and the dielectric layer operation, each corner of interior electrode is excessive fillet in the described alternately double exposure, avoids the spike discharge of capacitor when high pressure, punctures electric capacity.For further raising product capacity and ESR, interior electrode can be that shielding suspension structure double exposure arrangement well known to those skilled in the art, half screen cover the arrangement of suspension structure double exposure, non-shielding construction double exposure arrangement, misconstruction double exposure arrangement suspend in interior electrode of alternately double exposure described in the above-mentioned manufacture method and the dielectric layer operation.
It is electrode size that existing high pressure multilayer ceramic capacitor technology adopts Ag/Pd entirely, and the present invention selects Ni for use, and the termination electrode material in the end-blocking is copper Cu; The electrode size price is about 1/20 of Ag/Pd approximately, this just greatly reduces production cost, the present invention is to use the porcelain powder of reproducibility, relatively cheap with existing porcelain powder price, saved production cost of products equally, the invention belongs to high temperature sintering, easier to be high pressure resistant with the porcelain of existing low temperature sintering, strengthened product reliability.
Description of drawings
Fig. 1 is a products obtained therefrom major axis vertical part surface schematic diagram of the present invention, and electrode is arranged with shielding suspension structure double exposure in it, the 1st, and interior electrode; Fig. 2 is a products obtained therefrom major axis vertical part surface schematic diagram of the present invention, and electrode covers the arrangement of suspension structure double exposure, the 1st, interior electrode with half screen in it; Fig. 3 is a products obtained therefrom major axis vertical part surface schematic diagram of the present invention, and electrode is arranged with the non-shielding construction double exposure that suspends in it, the 1st, and interior electrode; Fig. 4 is a products obtained therefrom major axis vertical part surface schematic diagram of the present invention, and electrode is with not misconstruction double exposure arrangement, the 1st, interior electrode in it.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples:
Embodiment 1:
A kind of method of making high-voltage sheet type multilayer ceramic capacitor, in the porcelain slurry preparation of routine, select conventional reproducibility porcelain powder for use, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and adhesive: the weight ratio of porcelain powder is 45%: 1, plasticizer: the weight ratio of porcelain powder is 3%: 1, dispersant: the weight ratio of porcelain powder is 0.3%: 1, defoamer: the weight ratio of porcelain powder is 0.15%: 1, all the other are mixed solvents of toluene and absolute ethyl alcohol, and toluene: the absolute ethyl alcohol weight ratio is 1: 1, described porcelain powder is sphere or almost spherical, and particle diameter is 0.60～0.90um, and the porcelain slurry makes good dispersion through conventional curtain coating, the density height, surfacing, the ceramic dielectric diaphragm that powder is evenly distributed, in electrode and the dielectric layer operation, interior electrode adopts nickel to make and each corner of interior electrode is excessive fillet in the described alternately double exposure, and interior electrode is to adopt the shielding suspension structure double exposure of Fig. 1 to arrange; Through entering sintering circuit behind conventional briquet drying, lamination, cutting, the binder removal, described sintering circuit is made up of binder removal section, intensification high temperature section, soaking zone, temperature descending section, tempering section again, and the binder removal section is to contain H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.2～1.5% of total gas flow, temperature by room temperature to T
1The time 1～2 ℃/min of heating rate, 700≤T
1≤ 850 ℃, preferred T
1Be 850 ℃, preferred heating rate is 2 ℃/min, 6～10 hours binder removal time, preferably 8 hours; The intensification high temperature section is containing H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.8～2.5% of total gas flow, temperature is by T
1Arrive T
2The time 3～7 ℃/min of heating rate, 850 ℃＜T
2≤ 1330 ℃, 7 ℃/min preferably, T
2Temperature retention time during temperature 2～4 hours, preferably 3 hours, the tempering section of described sintering circuit was containing O
2N
2Carry out O under the atmosphere protection
2Content is 8ppm～30ppm, 10～20ppm preferably, and the chip porcelain body that obtains behind the sintering does not have crackle, and internal stress is little; Enter termination procedure through behind the conventional chamfering process again, termination electrode adopts Cu to make, and after burning end operation burns the end operation to be made up of low temperature binder removal section, high temperature binder removal section, soak section and temperature descending section, wherein low temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content is controlled at 20～300ppm, and temperature is raised to T by room temperature
3Temperature, 700≤T
3≤ 800 ℃, high temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content≤10ppm, temperature is by T
3Be raised to T
4Temperature, 800＜T
4≤ 960 ℃.
Draw the 3000V～5000V chip multilayer ceramic capacitor of 1206 specification 2000V, 1808/1812 specification with the said method manufacturing, at the bottom of the production cost, electric capacity is high voltage withstanding, and product capacity height and ESR are low.
Embodiment 2:
A kind of method of making high-voltage sheet type multilayer ceramic capacitor, in the porcelain slurry preparation of routine, select conventional reproducibility porcelain powder for use, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and adhesive: the weight ratio of porcelain powder is 47%: 1, plasticizer: the weight ratio of porcelain powder is 3%: 1, dispersant: the weight ratio of porcelain powder is 0.3%: 1, defoamer: the weight ratio of porcelain powder is 0.15%: 1, all the other are mixed solvents of toluene and absolute ethyl alcohol, and toluene: the absolute ethyl alcohol weight ratio is 2: 1, described porcelain powder is sphere or almost spherical, and particle diameter is 0.60～0.90um, and the porcelain slurry makes good dispersion through conventional curtain coating, the density height, surfacing, the ceramic dielectric diaphragm that powder is evenly distributed, in electrode and the dielectric layer operation, interior electrode adopts nickel to make and each corner of interior electrode is excessive fillet in the described alternately double exposure, and interior electrode is to adopt Fig. 2 half screen to cover the suspension structure double exposure to arrange; Through entering sintering circuit behind conventional briquet drying, lamination, cutting, the binder removal, described sintering circuit is made up of binder removal section, intensification high temperature section, soaking zone, temperature descending section, tempering section again, and the binder removal section is to contain H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.2～1.5% of total gas flow, temperature by room temperature to T
1The time 1～2 ℃/min of heating rate, 700≤T
1≤ 850 ℃, preferred T
1Be 850 ℃, preferred heating rate is 2 ℃/min, 6～10 hours binder removal time, preferably 8 hours; The intensification high temperature section is containing H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.8～2.5% of total gas flow, temperature is by T
1Arrive T
2The time 3～7 ℃/min of heating rate, 850 ℃＜T
2≤ 1330 ℃, 7 ℃/min preferably, T
2Temperature retention time during temperature 2～4 hours, preferably 3 hours, the tempering section of described sintering circuit was containing O
2N
2Carry out O under the atmosphere protection
2Content is 8ppm～30ppm, 10～20ppm preferably, and the chip porcelain body that obtains behind the sintering does not have crackle, and internal stress is little; Enter termination procedure through behind the conventional chamfering process again, termination electrode adopts Cu to make, and at last through burning end operation, burns the end operation and is made up of low temperature binder removal section, high temperature binder removal section, soak section and temperature descending section, and wherein low temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content is controlled at 20～300ppm, and temperature is raised to T by room temperature
3Temperature, 700≤T
3≤ 800 ℃, high temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content≤10ppm, temperature is by T
3Be raised to T
4Temperature, 800＜T
4≤ 960 ℃.
Draw the 3000V～5000V chip multilayer ceramic capacitor of 1206 specification 2000V, 1808/1812 specification with the said method manufacturing, at the bottom of the production cost, electric capacity is high voltage withstanding, and product capacity height and ESR are low.
Embodiment 3:
A kind of method of making high-voltage sheet type multilayer ceramic capacitor, in the porcelain slurry preparation of routine, select conventional reproducibility porcelain powder for use, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and adhesive: the weight ratio of porcelain powder is 50%: 1, plasticizer: the weight ratio of porcelain powder is 3%: 1, dispersant: the weight ratio of porcelain powder is 0.3%: 1, defoamer: the weight ratio of porcelain powder is 0.15%: 1, all the other are mixed solvents of toluene and absolute ethyl alcohol, and toluene: the absolute ethyl alcohol weight ratio is 3: 1, described porcelain powder is sphere or almost spherical, and particle diameter is 0.60～0.90um, and the porcelain slurry makes good dispersion through conventional curtain coating, the density height, surfacing, the ceramic dielectric diaphragm that powder is evenly distributed, in electrode and the dielectric layer operation, interior electrode adopts nickel to make and each corner of interior electrode is excessive fillet in the described alternately double exposure, and interior electrode is to adopt Fig. 3 non-shielding construction double exposure that suspends to arrange; Through entering sintering circuit behind conventional briquet drying, lamination, cutting, the binder removal, described sintering circuit is made up of binder removal section, intensification high temperature section, soaking zone, temperature descending section, tempering section again, and the binder removal section is to contain H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.2～1.5% of total gas flow, temperature by room temperature to T
1The time 1～2 ℃/min of heating rate, 700≤T
1≤ 850 ℃, preferred T
1Be 850 ℃, preferred heating rate is 2 ℃/min, 6～10 hours binder removal time, preferably 8 hours; The intensification high temperature section is containing H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.8～2.5% of total gas flow, temperature is by T
1Arrive T
2The time 3～7 ℃/min of heating rate, 850 ℃＜T
2≤ 1330 ℃, 7 ℃/min preferably, T
2Temperature retention time during temperature 2～4 hours, preferably 3 hours, the tempering section of described sintering circuit was containing O
2N
2Carry out O under the atmosphere protection
2Content is 8ppm～30ppm, 10～20ppm preferably, and the chip porcelain body that obtains behind the sintering does not have crackle, and internal stress is little; Enter termination procedure through behind the conventional chamfering process again, termination electrode adopts Cu to make, and after burning is held operation, described burning end operation is made up of low temperature binder removal section, high temperature binder removal section, soak section and temperature descending section, and wherein low temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Amount is controlled at 20～300ppm, and temperature is raised to T by room temperature
3Temperature, 700≤T
3≤ 800 ℃, high temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content≤10ppm, temperature is by T
3Be raised to T
4Temperature, 800＜T
4≤ 960 ℃.
Draw the 3000V～5000V chip multilayer ceramic capacitor of 1206 specification 2000V, 1808/1812 specification with the said method manufacturing, at the bottom of the production cost, electric capacity is high voltage withstanding, and product capacity height and ESR are low.
Embodiment 4:
A kind of method of making high-voltage sheet type multilayer ceramic capacitor, in the porcelain slurry preparation of routine, select conventional reproducibility porcelain powder for use, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and adhesive: the weight ratio of porcelain powder is 47%: 1, plasticizer: the weight ratio of porcelain powder is 3%: 1, dispersant: the weight ratio of porcelain powder is 0.3%: 1, defoamer: the weight ratio of porcelain powder is 0.15%: 1, all the other are mixed solvents of toluene and absolute ethyl alcohol, and toluene: the absolute ethyl alcohol weight ratio is 0.5: 1, described porcelain powder is sphere or almost spherical, and particle diameter is 0.60～0.90um, and the porcelain slurry makes good dispersion through conventional curtain coating, the density height, surfacing, the ceramic dielectric diaphragm that powder is evenly distributed, described replacing in interior electrode of double exposure and the dielectric layer operation, interior electrode adopts nickel to make and each corner of interior electrode is excessive fillet, and interior electrode is to adopt not misconstruction double exposure arrangement of Fig. 4; Through entering sintering circuit behind conventional briquet drying, lamination, cutting, the binder removal, described sintering circuit is made up of binder removal section, intensification high temperature section, soaking zone, temperature descending section, tempering section again, and the binder removal section is to contain H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.2～1.5% of total gas flow, temperature by room temperature to T
1The time 1～2 ℃/min of heating rate, 700≤T
1≤ 850 ℃, preferred T
1Be 850 ℃, preferred heating rate is 2 ℃/min, 6～10 hours binder removal time, preferably 8 hours; The intensification high temperature section is containing H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.8～2.5% of total gas flow, temperature is by T
1Arrive T
2The time 3～7 ℃/min of heating rate, 850 ℃＜T
2≤ 1330 ℃, 7 ℃/min preferably, T
2Temperature retention time during temperature 2～4 hours, preferably 3 hours, the tempering section of described sintering circuit was containing O
2N
2Carry out O under the atmosphere protection
2Content is 8ppm～30ppm, 10～20ppm preferably, and the chip porcelain body that obtains behind the sintering does not have crackle, and internal stress is little; Enter termination procedure through behind the conventional chamfering process again, termination electrode adopts Cu to make, and after burning is held operation, described burning end operation is made up of low temperature binder removal section, high temperature binder removal section, soak section and temperature descending section, and wherein low temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content is controlled at 20～300ppm, and temperature is raised to T by room temperature
3Temperature, 700≤T
3≤ 800 ℃, high temperature binder removal section is containing O
2N
2Carry out under the atmosphere protection,
2Content O
2Content≤10ppm, temperature is by T
3Be raised to T
4Temperature, 800＜T
4≤ 960 ℃.
Draw the 3000V～5000V chip multilayer ceramic capacitor of 1206 specification 2000V, 1808/1812 specification with the said method manufacturing, at the bottom of the production cost, electric capacity is high voltage withstanding, and product capacity height and ESR are low.
Claims (10)
1. method of making high-voltage sheet type multilayer ceramic capacitor, mainly by porcelain slurry preparation, make the medium diaphragm, alternately electrode and dielectric layer, briquet drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end operation are formed in the double exposure, in interior electrode of described alternately double exposure and the dielectric layer operation, inner electrode is a nickel, in the described termination procedure, the termination electrode material is a copper, it is characterized in that:
Above-mentioned sintering circuit is made up of binder removal section, intensification high temperature section, soaking zone, temperature descending section, tempering section, and the binder removal section is to contain H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.2～1.5% of total gas flow, temperature by room temperature to T
1The time 1～2 ℃/min of heating rate, 700≤T
1≤ 850 ℃, 6～8 hours binder removal time; The intensification high temperature section is containing H
2N
2Carry out H under the atmosphere protection
2Volume content be 0.8～2.5% of total gas flow, temperature is by T
1Arrive T
2The time 3～7 ℃/min of heating rate, 850 ℃＜T
2≤ 1330 ℃, T
2Temperature retention time during temperature 2～4 hours;
Above-mentioned burning end operation is made up of low temperature binder removal section, high temperature binder removal section, soak section and temperature descending section, and wherein low temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content is controlled at 20～300ppm, and temperature is raised to T by room temperature
3Temperature, 700≤T
3≤ 800 ℃, high temperature binder removal section is containing O
2N
2Carry out O under the atmosphere protection
2Content≤10ppm, temperature is by T
3Be raised to T
4Temperature, 800＜T
4≤ 960 ℃.
2. manufacture method as claimed in claim 1 is characterized in that, the tempering section of described sintering circuit is containing O
2N
2Carry out O under the atmosphere protection
2Content is 8ppm～30ppm.
3. manufacture method as claimed in claim 2, it is characterized in that, in the preparation of described porcelain slurry, the weight ratio of adhesive and porcelain powder is (45～50) %: 1, the weight ratio of plasticizer and porcelain powder is (2～4) %: 1, the weight ratio of dispersant and porcelain powder is (0.1～0.3) %: 1, and the weight ratio of defoamer and porcelain powder is (0.1～0.2) %: 1, all the other are solvents.
4. manufacture method as claimed in claim 3 is characterized in that, described solvent is the mixture of toluene and absolute ethyl alcohol, toluene: the weight ratio of absolute ethyl alcohol is 0.5～4: 1.
5. manufacture method as claimed in claim 4 is characterized in that, described porcelain powder is sphere or almost spherical, and particle diameter is 0.60～0.90um.
6. manufacture method as claimed in claim 5 is characterized in that, in electrode and the dielectric layer operation, each corner of interior electrode is excessive fillet in the described alternately double exposure.
7. manufacture method as claimed in claim 6 is characterized in that, interior electrode is to arrange with shielding suspension structure double exposure in interior electrode of described alternately double exposure and the dielectric layer operation.
8. manufacture method as claimed in claim 6 is characterized in that, interior electrode is to cover the suspension structure double exposure with half screen to arrange in interior electrode of described alternately double exposure and the dielectric layer operation.
9. manufacture method as claimed in claim 6 is characterized in that, interior electrode is the non-shielding construction double exposure arrangement that suspends in interior electrode of described alternately double exposure and the dielectric layer operation.
10. manufacture method as claimed in claim 6 is characterized in that, interior electrode is that the misconstruction double exposure is arranged in interior electrode of described alternately double exposure and the dielectric layer operation.
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| CN200710030282XA CN101127275B (en) | 2007-09-14 | 2007-09-14 | A making method for high voltage sheet type multi-layer porcelain capacitor |
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| CN200710030282XA CN101127275B (en) | 2007-09-14 | 2007-09-14 | A making method for high voltage sheet type multi-layer porcelain capacitor |
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| CN101127275B true CN101127275B (en) | 2010-06-16 |
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| JP7426771B2 (en) * | 2018-04-11 | 2024-02-02 | 太陽誘電株式会社 | Manufacturing method of multilayer ceramic capacitor |
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| CN1767099A (en) * | 2003-10-31 | 2006-05-03 | Tdk株式会社 | Method of production of multilayer ceramic electronic device |
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