CN102394175B - A kind of chip multilayer ceramic capacitor of high-frequency and high-Q-value - Google Patents
A kind of chip multilayer ceramic capacitor of high-frequency and high-Q-value Download PDFInfo
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- CN102394175B CN102394175B CN201110181054.9A CN201110181054A CN102394175B CN 102394175 B CN102394175 B CN 102394175B CN 201110181054 A CN201110181054 A CN 201110181054A CN 102394175 B CN102394175 B CN 102394175B
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Abstract
A kind of preparation method of chip multilayer ceramic capacitor of high q-factor, it comprises the preparation of porcelain slurry, make electrode and dielectric layer in medium diaphragm, alternately double exposure, briquet drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end operation, in described alternately double exposure in electrode and dielectric layer operation, inner electrode is nickel, in described termination procedure, termination electrode material is copper Cu, it is characterized in that: in the preparation of porcelain slurry, porcelain used is Mg-Si-O
3system material, K value is 30 ± 2, the granularity spherical of this system porcelain or like spherical, specific area is 4.5 ~ 11.0%; The chip multilayer ceramic capacitor made has superior high Q electric property, and can reduce production cost greatly.
Description
Technical field
The present invention relates to a kind of chip multilayer ceramic capacitor of high-frequency and high-Q-value.
Background technology
Chip multilayer ceramic capacitor MLCC is a kind of new electronic component, in the surface mount in a large number for consumer electronics complete machines such as communication, computer, household electrical appliance.Along with developing rapidly of global surface mounting technique, the output of surface mount component rises rapidly, and MLCC demand also constantly rises.Produce high Q high frequency chip multilayer ceramic capacitor MLCC at present both at home and abroad mainly to adopt bi-material system to realize: a kind of employing precious metals ag/Pd or full Pd material are interior electrode, termination electrode is then full Ag, and the sintering temperature of full palladium material is quite high, sintering temperature is 1300 ~ 1360 DEG C, must cause the problem that production cost is too high like this.Another adopts metallic copper to be inner electrode system, and copper electrode is easily oxidized, more difficult control in production, and properties of product and qualification rate are difficult to ensure, must cause the problem that production cost is too high like this.
Summary of the invention
For above-mentioned technological deficiency, the technical problem to be solved in the present invention be to provide a kind of production cost low, realize the chip multilayer ceramic capacitor that technique controls well, produces high Q.
The technical problem to be solved in the present invention is achieved through the following technical solutions: a kind of preparation method of chip multilayer ceramic capacitor of high q-factor, it comprises the preparation of porcelain slurry, make electrode and dielectric layer in medium diaphragm, alternately double exposure, briquet drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end operation, in described alternately double exposure in electrode and dielectric layer operation, inner electrode is nickel, in described termination procedure, termination electrode material is copper Cu, in the preparation of porcelain slurry, porcelain used is Mg-Si-O
3system material, K value is 30 ± 2, the granularity spherical of this system porcelain or like spherical, specific area is 4.5 ~ 11.0%; Described binder removal uses nitrogen binder removal case binder removal 450 DEG C/17 hours; Described sintering temperature 800 DEG C ~ 1030 DEG C, starts to control at 3-5 DEG C/min to the heating rate of highest temperature section at 800 DEG C; Described burning end maximum temperature is 750 ~ 960 DEG C.
Further: in the preparation method of the chip multilayer ceramic capacitor of above-mentioned high q-factor, in described alternately double exposure in electrode and dielectric layer operation, interior electrode adopts copper powder particle size to be that the copper slurry printing of 0.1-0.25 μm is made.Described sintering curre is made up of the section of intensification, the high temperature section of burning till, temperature descending section, tempering section, and intensification section and the high temperature section of burning till are containing H
2n
2carry out under atmosphere protection, H
2weight content controls in 0.05% of atmosphere total amount.And N in low-temperature zone
2oxygen content in atmosphere is higher than the N of high temperature section
2oxygen content in atmosphere, low-temperature zone N
2oxygen content in atmosphere is 50-400ppm, high temperature section N
2oxygen content in atmosphere is 0-50ppm.
Compared with prior art, the preparation method of the chip multilayer ceramic capacitor of high q-factor of the present invention is on the basis that original base metal nickel high-frequency multilayer ceramic dielectric capacitor is produced, in conjunction with MLCC exploitation for many years and designing technique, selected by the selection of porcelain powder material, MLCC structure particular design, the selection of coupling electrode size, terminal electrode paste matching, the research of termination electrode sintering and Pb-free wave soldering technique, the i.e. exploitation of sulfamic acid plating system.Achieve and make a kind of high Q chip multilayer ceramic capacitor, thus reduce production cost, improve the operability of production technology.
Embodiment
Purport of the present invention is on the basis that original base metal nickel high-frequency multilayer ceramic dielectric capacitor is produced, in conjunction with MLCC exploitation for many years and designing technique, process exploitation sintered by the selection of porcelain powder material, MLCC structure particular design, the selection of mating electrode size, the selection of terminal electrode paste matching, termination electrode etc.Achieve and make a kind of high Q chip multilayer ceramic capacitor, present invention reduces sintering temperature, reduce production cost, improve the operability of production technology.Below in conjunction with embodiment, content of the present invention is described in further detail, content mentioned in embodiment is not limitation of the invention, and slurry preparation in preparation method, double exposure, the selection of burning till, burning the process conditions such as end, plating can be suited measures to local conditions and there is no substantial effect to result.
A kind of high Q copper inner electrode chip multilayer ceramic capacitor and preparation method thereof, form primarily of electrode and dielectric layer, briquet drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end operation in the preparation of porcelain slurry, making medium diaphragm, alternately double exposure, the adhesive (PVB) used in porcelain slurry preparation section, plasticizer (DOP, DBP), dispersant (GTO, AKM0531), defoamer (methyl-silicone oil) are all the materials that those skilled in the art commonly use, and solvent used is toluene and absolute ethyl alcohol weight ratio is the mixed solvent of 0.5 ~ 2:1.In described alternately double exposure in electrode and dielectric layer operation, interior electrode adopts copper powder particle size to be that the copper slurry printing of 0.1-0.25 μm is made, and copper is starched each component and is: ceramic powder additive 5 ~ 9%, metal powder 47 ~ 51%, organic carrier 40 ~ 48%.The copper of interior electrode is heavily 12.5 milligrams/square inch.Termination electrode material is copper Cu, and its each component is (vitreum 4 ~ 8%, copper powder 69 ~ 75%, organic additive 17 ~ 27%).Dielectric ceramic composition main component is the composite oxides Mg-Si-O of Si, Mg
3, submember is one or more in Ca, Si, Mn, Y, Zr, Zn, Ni, Nb oxide of 0.1-5wt%.Wherein as Ca, Zr can improve the rate of change of dielectric constant, improve the compressive resistance of medium.The Different adding amount of dielectric ceramic composition submember is also larger on the impact of product temperature characteristic.Mg-Si-O
3the granularity spherical of system porcelain or like spherical, specific area is 4.5 ~ 11.0%.Binder removal uses nitrogen binder removal case binder removal 450 DEG C/17 hours.Sintering temperature 900 DEG C ~ 1030 DEG C, makes chip densified sintering product, ensures the mechanical performance that product is good and electric property.Sintering curre is made up of the section of intensification, the high temperature section of burning till, temperature descending section, tempering section, and intensification section and the high temperature section of burning till are containing H
2n
2carry out under atmosphere protection, H
2weight content controls in 0.05% of atmosphere total amount.Ensure that electrode is not oxidized in intensification section and the high temperature section of burning till, reduce the reduction of ceramic dielectric simultaneously as far as possible.Start to control at 3-5 DEG C/min to the heating rate of highest temperature section at 800 DEG C, make nickel entoplasm consistent with the contraction of porcelain body, internal stress is little, ensures the rear chip flawless of sintering.Burning end is containing O
2n
2in atmosphere, segmentation is carried out, and wherein, less than 500 DEG C is low-temperature zone, and 500 DEG C is described high temperature section of burning end operation to burning end maximum temperature, and burning end maximum temperature is 750 ~ 960 DEG C, and N in low-temperature zone
2oxygen content in atmosphere is higher than the N of high temperature section
2oxygen content in atmosphere, low-temperature zone N
2oxygen content in atmosphere is the oxygen content in 50-400ppm, high temperature section N2 atmosphere is 0-50ppm.
The Q value superior performance making 0603CQ100J500NB3 specification copper inner electrode product is as stated above as shown in table 1.
Table 1 capacitor equivalent series parameter (representing: model is the product of the 10Pf of 0603 specification, and J is volume error ± 5%, and 500 is the rated voltage of 50V, and wherein tester is E5071C)
Claims (2)
1. the preparation method of the chip multilayer ceramic capacitor of a high q-factor, it comprises the preparation of porcelain slurry, make electrode and dielectric layer in medium diaphragm, alternately double exposure, briquet drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end operation, in described alternately double exposure in electrode and dielectric layer operation, inner electrode is copper, in described termination procedure, termination electrode material is copper Cu, it is characterized in that: in the preparation of porcelain slurry, porcelain used is Mg-Si-O
3system material, K value is 30 ± 2, the granularity spherical of this system porcelain, and specific area is 4.5 ~ 11.0m
2/ g; Described binder removal uses nitrogen binder removal case binder removal 450 DEG C/17 hours; Described sintering temperature 900 DEG C ~ 1030 DEG C, starts to control at 3-5 DEG C/min to the heating rate of highest temperature section at 800 DEG C; Sintering curre is made up of the section of intensification, the high temperature section of burning till, temperature descending section, tempering section, and intensification section and the high temperature section of burning till are containing H
2n
2carry out under atmosphere protection, H
2weight content controls in 0.05% of atmosphere total amount; Described burning end maximum temperature is 750 ~ 960 DEG C; Less than 500 DEG C is low-temperature zone, and 500 DEG C is described high temperature section of burning end operation to burning end maximum temperature, and N in low-temperature zone
2oxygen content in atmosphere is higher than the N of high temperature section
2oxygen content in atmosphere, low-temperature zone N
2oxygen content in atmosphere is 50-400ppm, high temperature section N
2oxygen content in atmosphere is 0-50ppm.
2. the preparation method of the chip multilayer ceramic capacitor of high q-factor according to claim 1, is characterized in that: in described alternately double exposure in electrode and dielectric layer operation, and interior electrode adopts copper powder particle size to be that the copper slurry printing of 0.1-0.25 μm is made.
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| CN201110181054.9A CN102394175B (en) | 2011-06-30 | 2011-06-30 | A kind of chip multilayer ceramic capacitor of high-frequency and high-Q-value |
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| CN102394175B true CN102394175B (en) | 2016-04-20 |
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| CN101127275A (en) * | 2007-09-14 | 2008-02-20 | 广东风华高新科技股份有限公司 | A making method for high voltage sheet type multi-layer porcelain capacitor |
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| CN101127275A (en) * | 2007-09-14 | 2008-02-20 | 广东风华高新科技股份有限公司 | A making method for high voltage sheet type multi-layer porcelain capacitor |
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