CN101118915A - Optical sensing element and manufacturing method - Google Patents
Optical sensing element and manufacturing method Download PDFInfo
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- CN101118915A CN101118915A CNA2007101419351A CN200710141935A CN101118915A CN 101118915 A CN101118915 A CN 101118915A CN A2007101419351 A CNA2007101419351 A CN A2007101419351A CN 200710141935 A CN200710141935 A CN 200710141935A CN 101118915 A CN101118915 A CN 101118915A
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Abstract
The present inventionprovides an optical sensing element, comprising a base board, a patterned first semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inner dielectric layer, a patterned second semiconductor layer with a second state, two first electrodes arranged on the inner dielectric layer and two second electrodes arranged on the patterned second semiconductor layer; wherein, the patterned first semiconductor layer with a first state is positioned in the transistor region on the base board and has a first doping region and a second doping region; the dielectric layer is coated on the patterned first semiconductor layer, and the patterned conductive layer is mounted on the dielectric layer, the inner dielectric layer is coated on the dielectric layer and the patterned conductive layer and has two holes exposing the first doping region and the second doping region; besides, the patterned second semiconductor layer is arranged on an optical sensing region and the first electrode is electrically connected with the patterned first semiconductor layer.
Description
[technical field]
The invention relates to a kind of Photosensing Units.
[background technology]
Various now consumption electronic products, no matter be the display screen of LCD, LCD TV, plasma television or mobile phone, PDA(Personal Digital Assistant), digital camera and the handheld device of computer, and even the Touch Screen of Automatic Teller Machine (ATM) all extensively uses the technology of flat-panel screens.Therefore, significantly promoted the requirement of consumer for the color and the brightness acuity of flat display picture.Based on above-mentioned demand, display now, especially in various touch panels (touch panel), all assembled the Photosensing Units that to respond to extraneous light, make flat-panel screens when external environment light changes, can suitably change the brightness and the color of picture, allow the consumer no matter under which kind of situation, all can obtain better visual effect.
Please refer to Fig. 1, Fig. 1 is the running schematic diagram of an existing touch panel.As shown in Figure 1, existing touch panel mainly comprises a upper substrate 12, an infrabasal plate 14, a black-matrix layer 38 is located on the part upper substrate 12 and at least one Photosensing Units that is made of light sensitive diode 16 and thin-film transistor 18 is arranged on the infrabasal plate 14.Wherein, light sensitive diode 16 comprises a P type doped region 20 usually, one N type doped region 22, and an intrinsic region 24 that is located between P type doped region and the N type doped region, the thin-film transistor 18 that is located at light sensitive diode 16 next doors then has source territory 26, one light dope source electrode/drain region 28, one is positioned at the intrinsic region (not shown) of 28 of light dope source electrode/drain regions, one gate dielectric 30, one grid 32, one inner layer dielectric layer 34 covers on regions and source 26 and the light dope source electrode/drain region 28 and two electrodes 36 are connected regions and source 26 respectively.
Generally speaking, touch panel is when running, the Photosensing Units that is located on the infrabasal plate can change voltage on the storage capacitors because of whether finger reflects light that module backlight sends, so the size of the electric current sensitiveness to light of Photosensing Units is the important key of touch panel success or not.Yet present touch panel has following point usually: the Photosensing Units in the first panel is responsive inadequately to light, and another problem is that the photoelectric current of Photosensing Units is big inadequately.Above-mentioned reason is that intrinsic region (not shown) material that constitutes P type doped region 20, N type doped region 22, intrinsic region 24, regions and source 26, light dope source electrode/drain region 28 in Photosensing Units 16 and the thin-film transistor 18 and be positioned at 28 of light dope source electrode/drain regions all is the semiconductor layer that utilizes polysilicon, that is same crystal lattice state.Though the electronics flow rate that the semiconductor layer of polysilicon had comparatively fast reaches physical characteristics such as electrically stable, is prone to the problems referred to above.Therefore, how to be an important topic now with lightsensitivity and the photoelectric current that promotes Photosensing Units by improving present manufacture craft.
[summary of the invention]
Therefore purpose of the present invention is for providing a kind of Photosensing Units and preparation method thereof, to improve above-mentioned existing problem.
Another object of the present invention discloses a kind of Photosensing Units, and it comprises patterning second semiconductor layer, 2 first electrodes that patterned first semiconductor layer, a dielectric layer, a patterned conductive layer, an inner layer dielectric layer, that a substrate, with at least one transistor area and at least one optical sensing area has first state have second state and is formed on the inner layer dielectric layer and 2 second electrodes are formed on patterning second semiconductor layer.Wherein, patterned first semiconductor layer is to be formed on the substrate of transistor area and to have one first doped region and one second doped region.Dielectric layer is to cover on substrate and the patterned first semiconductor layer, patterned conductive layer is on the dielectric layer that is formed on transistor area and the optical sensing area, and inner layer dielectric layer is to cover on dielectric layer and the patterned conductive layer and have first doped region and second doped region that at least two holes expose patterned first semiconductor layer respectively.Patterning second semiconductor layer is to be formed on the optical sensing area, and first electrode is to electrically connect patterned first semiconductor layer.
A further object of the present invention discloses a kind of method of making Photosensing Units.One substrate at first is provided, has at least one transistor area and at least one optical sensing area on this substrate.Form a patterned first semiconductor layer with first state then on this substrate of this transistor area, it has one first doped region and one second doped region.Then cover a dielectric layer on this first semiconductor layer of this substrate and this transistor area, and form a patterned conductive layer on this dielectric layer on this transistor area and this optical sensing area.Cover an inner layer dielectric layer then on this dielectric layer and on this patterned conductive layer, it has this first doped region and this second doped region that at least two holes expose this first semiconductor layer of part respectively.Form subsequently patterning second semiconductor layer with second state on this optical sensing area, form 2 first electrodes on this inner layer dielectric layer and electrically connect this patterned first semiconductor layer and form 2 second electrodes on this patterning second semiconductor layer.
A further object of the present invention discloses a kind of display floater, it has a viewing area and a non-display area, and display floater comprises that a plurality of picture elements are arranged on the viewing area, at least one drive circuit is electrically connected at those picture elements and at least one light sensing zone, and the light sensing zone has at least one Photosensing Units and is electrically connected at those drive circuits.Wherein, Photosensing Units comprises patterning second semiconductor layer, 2 first electrodes that patterned first semiconductor layer, a dielectric layer, a patterned conductive layer, an inner layer dielectric layer, that a substrate, with at least one transistor area and at least one optical sensing area has first state have second state and is formed on the inner layer dielectric layer and 2 second electrodes are formed on patterning second semiconductor layer.Patterned first semiconductor layer is to be formed on the substrate of transistor area and to have one first doped region and one second doped region.Dielectric layer is to cover on substrate and the patterned first semiconductor layer, patterned conductive layer is on the dielectric layer that is formed on transistor area and the optical sensing area, and inner layer dielectric layer is to cover on dielectric layer and the patterned conductive layer and have first doped region and second doped region that at least two holes expose patterned first semiconductor layer respectively.Patterning second semiconductor layer is to be formed on the optical sensing area, and first electrode is to electrically connect patterned first semiconductor layer.
About the advantages and spirit of the present invention, can be further understood by following detailed Description Of The Invention and appended diagram.Yet appended diagram, only for reference and explanation, non-so that the present invention is limited.
[description of drawings]
Fig. 1 is the running schematic diagram of an existing touch panel.
Fig. 2 to Fig. 8 makes the schematic diagram of a Photosensing Units for first embodiment of the invention.
Fig. 9 is the top view of OPTICAL SENSORS in Fig. 8 Photosensing Units.
The top view that Figure 10 electrically connects the second portion of the patterned conductive layer of OPTICAL SENSORS for second embodiment of the invention.
Figure 11 is along the generalized section of tangent line AA ' among Figure 10.
The top view that Figure 12 electrically connects the second portion of the patterned conductive layer of OPTICAL SENSORS for third embodiment of the invention.
Figure 13 is along the generalized section of tangent line BB ' and CC ' among Figure 12.
The top view that Figure 14 electrically connects the second portion of the patterned conductive layer of OPTICAL SENSORS for fourth embodiment of the invention.
Figure 15 is along the generalized section of tangent line DD ' and EE ' among Figure 14.
Figure 16 is applied to schematic diagram on the display floater for fifth embodiment of the invention with Photosensing Units.
Figure 17 is applied to schematic diagram on the display floater for sixth embodiment of the invention with Photosensing Units.
Figure 18 is arranged on Photosensing Units for seventh embodiment of the invention the schematic diagram of the viewing area of display floater.
Figure 19 is located at Photosensing Units for fifth embodiment of the invention the circuit diagram of the non-display area of display floater.
Figure 20 is arranged on Photosensing Units for seventh embodiment of the invention the circuit diagram of the viewing area of display floater.
Figure 21 is the electrooptical device schematic diagram of eighth embodiment of the invention.
[embodiment]
The present invention mainly is thin-film transistor, storage capacitors and the OPTICAL SENSORS that the while is made Photosensing Units in conjunction with the advantage of the material manufacture craft of different crystalline lattice when making Photosensing Units.Wherein, employed semiconductor layer is made of the material of two kinds of different kenels respectively in thin-film transistor and the OPTICAL SENSORS.According to preferred embodiment of the present invention, the semiconductor layer in the thin-film transistor is made of siliceous polycrystalline material, and the semiconductor layer in the OPTICAL SENSORS is then by siliceous example that non-crystalline material constitutes.Because siliceous non-crystalline material has the lightsensitivity better than other materials, therefore OPTICAL SENSORS of the present invention can reach the lightsensitivity better than existing Photosensing Units.
Please refer to Fig. 2 to Fig. 8, Fig. 2 to Fig. 8 makes the schematic diagram of a Photosensing Units for first embodiment of the invention.As shown in Figure 2, one substrate 42 at first is provided, and have at least one transistor area 44, at least one capacitive region 46 and at least one optical sensing area 48 on the substrate 42 for implementing example as following explanation, but be not limited thereto a little zones, also can have following at least a zone, as: holding wire zone (comprising scan line zone and data wire zone), contact mat zone, short-circuit rods zone, testing cushion zone, integrated circuit (IC) engaging zones or the like.In addition, according to the demand in the design, substrate 42 does not also optionally have at least one capacitive region 46.The material of substrate 42 comprises a transparent material (as: glass, quartzy, or other material, or above-mentioned combination), one light-proof material (as: pottery, silicon chip, or other material, or above-mentioned combination), one flexible materials is (as: by the glass of thinning, polyalkenes Ju Hai class, polyalcohols, polyesters, rubber, thermoplastic polymer, thermosetting polymer, the poly aromatic hydro carbons, poly-methyl-prop vinegar acid methyl esters class, polycarbonate-based, or other, or above-mentioned derivative, or above-mentioned combination).Embodiments of the invention are to be to implement example with glass, but are not limited thereto.
Form a patterned semiconductor layer 50 (also being called first patterned semiconductor layer) then on the substrate 42 of transistor area 44 and capacitive region 46.Wherein, the material of semiconductor layer 50 comprises the silicon materials of siliceous monocrystal material, siliceous micro crystal material, siliceous polycrystalline material, siliceous non-crystalline material or germanic above-mentioned lattice or contains silicon materials or other material or the above-mentioned combination of the above-mentioned lattice of arsenic.Embodiments of the invention are to serve as to implement example with siliceous polycrystalline material, but are not limited thereto.Moreover the method for the semiconductor layer of patterning comprises deposition/gold-tinted/etching process, inkjet-fabricated technology, screen painting manufacture craft or other method or above-mentioned combination.
As shown in Figure 3, then cover at least one dielectric layer 52 on substrate 42 and semiconductor layer 50, and utilize a patterning photoresist layer 54 to be used as shade and carry out a doping program, form first electrode of an electric capacity in the semiconductor layer 50 of transistor area 44, to form the semiconductor layer 50 of one first doped region 56 and one second doped region 58 and the capacitive region 46 of mixing.Dielectric layer 52 can only have one deck, has two level layers or have tri-layer layer etc.This first doped region 56 and second doped region 58 are the transistorized regions and source of subsequent thin film.Wherein, first doped region 56 and second doped region 58 can form simultaneously or form in regular turn, and the polarity of first doped region 56 and second doped region 58 can be identical in fact or be different in essence.In addition, at least one of first doped region 56 and second doped region 58, its son that mixes comprises N type, P type or above-mentioned combination.Embodiments of the invention are that the polarity with first doped region 56 and second doped region 58 is all the enforcement example in fact mutually, but are not limited thereto.
Then as shown in Figure 4, form a patterned conductive layer 60 (also being called first patterned conductive layer) on the dielectric layer 52 of transistor area 44, capacitive region 46 and optical sensing area 48, to form at least one grids in transistor area 44 and to form second electrode of an electric capacity in capacitive region 46.Wherein, the patterned conductive layer 60 on the optical sensing area 48 also can be described as grid.Carry out another doping program subsequently, utilize the conductive layer 60 of patterning to be used as shade that will mix and implant in the semiconductor layer 50 of transistor area 44, on one side with in be adjacent to first doped region 56 and second doped region 58 wherein at least one form a light doping section 62.Embodiments of the invention are that all to form a light doping section 62 serve as to implement example to the limit with first doped region 56 and second doped region 58, but are not limited thereto.Moreover the method for the conductive layer of patterning comprises deposition/gold-tinted/etching process, inkjet-fabricated technology, screen painting manufacture craft or other method or above-mentioned combination.
Moreover, must it should be noted that, the present invention is respectively at behind the conductive layer 60 that forms dielectric layer 52 and patterning, carry out doping program and another doping program more respectively for implementing example, but be not limited thereto, also can form regions and source, behind the formation dielectric layer, carry out another doping program formation light doping section or alternate manner or above-mentioned combination in before the formation dielectric layer, carrying out the doping program.In addition, above-mentioned regions and source and light doping section are with the following example that formed of different time, also optionally after the semiconductor layer that is formed at patterning simultaneously is formed at substrate, simultaneously be formed at dielectric layer 52 be covered in substrate after, the conductive layer that is formed at patterning simultaneously be formed on the dielectric layer partly after.
As shown in Figure 5, cover an inner layer dielectric layer 64 then on the conductive layer 60 of dielectric layer 52 and patterning.Inner layer dielectric layer 64 can only have one deck, has two level layers or have tri-layer layer etc., and the inner layer dielectric layer 64 of present embodiment preferably only has one deck, but is not limited thereto.In addition, the material of inner layer dielectric layer 64 can comprise inorganic, organic material or above-mentioned combination.
The semiconductor layer 66 (also being called second patterned semiconductor layer) that forms another patterning then is on the inner layer dielectric layer 64 of optical sensing area 48.As mentioned above, the material of semiconductor layer 66 comprises silicon materials or other material or the above-mentioned combination of siliceous monocrystal material, siliceous micro crystal material, siliceous polycrystalline material, siliceous non-crystalline material or germanic above-mentioned lattice.Embodiments of the invention are to serve as to implement example with siliceous non-crystalline material, but are not limited thereto.Secondly, the state of semiconductor layer 66 is different in essence in the state of the semiconductor layer 50 of transistor area 44.For instance, when semiconductor layer 50 is when being made of siliceous polycrystalline material, 66 of semiconductor layers are made of siliceous non-crystalline material, but are not limited thereto, and also can be selected from above-mentioned material or other material.In addition, semiconductor layer 66 can only have one deck or have two level layers.The semiconductor layer of present embodiment is preferably by 68,70 on two level layers and constitutes, and the arrangement mode of two level layers 68,70 can comprise rectilinear or horizontal, and the present invention is to be example with rectilinear.In addition, if semiconductor layer 66 is to be made of 68,70 on two level layers, then wherein a sublevel can be made of and another sublevel can be selected to be made of the semiconductor layer of non-doping and/or the semiconductive layer of at least one another doping the semiconductor layer that mixes.Wherein, wherein a sublevel if by the semiconductor layer that mixes constituted and another sublevel as if when having the semiconductive layer of at least one another doping, another doping content that then another sublevel had in fact less than or equal the doping content that a sublevel is wherein had in fact, its son that mixes comprises N type, P type or above-mentioned combination.
As shown in Figure 6, then after the semiconductor layer 66 of patterning forms, preferably, carry out wherein at least one semiconductor layer 66 of repairing patterning defective that may be caused because of previous manufacture craft of activation (activation) step and a gas treatment step earlier, but be not limited thereto, also can select not use activation step and gas treatment step.Moreover the method for semiconductor layer 66 comprises deposition/gold-tinted/etching process, inkjet-fabricated technology, screen painting manufacture craft or other method or above-mentioned combination.And then carry out a patterning manufacture craft, for example utilize a patterning photoresist layer (figure does not show) to be used as shade and carry out an etching process, in the inner layer dielectric layer 64 of transistor area 44, to form at least two holes 72, make hole 72 expose first doped region 56 of at least one part and second doped region 58 of at least one part respectively.Yet, be not limited to above-mentioned order of carrying out, the present invention again can deposition carry out earlier behind the inner layer dielectric layer 64 activation step and gas treatment step wherein at least one, before this forms semiconductor layer 66 after wherein at least one step is finished again, behind deposition inner layer dielectric layer 64, do not use above-mentioned steps fully and form semiconductor layer 66, or deposition carry out earlier behind the inner layer dielectric layer 64 activation step and gas treatment step wherein at least one, and carry out another person of activation step and gas treatment step after forming semiconductor layer 66 again, this all belongs to the scope that the present invention is contained.Wherein, gas treatment step institute using gases is to comprise as described below at least one, for example: hydrogen, helium, neon, argon gas, krypton gas, xenon, radon gas, fluorine-containing gas (as: carbon tetrafluoride, fluoroform, sulphur hexafluoride, hydrogen fluoride, bifluoride nitrogen, Nitrogen trifluoride, fluoroethane, silicon tetrafluoride, fluoro-propane, fluorochloromethane, chlorofluoroethane, the fluorine chloropropane, or other gas, or above-mentioned combination), oxygen containing gas (as: oxygen, ozone, nitric oxide, nitrogen dioxide, or other gas, or above-mentioned combination), chloride gas (chlorine, hydrogen chloride, chloroform, silicon tetrachloride, dichloride nitrogen, agene, chloroethanes, chloropropane, fluorochloromethane, chlorofluoroethane, the fluorine chloropropane, boron chloride, or other gas, or above-mentioned combination), nitrogenous gas (as: nitrogen, nitric oxide, nitrogen dioxide, or other gas, or above-mentioned combination), or other gas, and the board that above-mentioned gas used comprises the plasma board, the heating board, the microwave board, or other board, or the combination of above-mentioned wantonly two boards.
Wherein, wherein at least one comprises inorganic (as: by the formed silicon dioxide of silicomethane, by the formed silicon dioxide of tetrem alkyl oxygen silicomethane, siliceous nitrogen oxide or other material or above-mentioned combination), organic material (as: photoresistance, poly-third vinegar ether (the polyarylene ether to the material of dielectric layer 52 and inner layer dielectric layer 64; PAE), poly-vinegar class, polyesters, polyalcohols, polyalkenes, benzocyclobutene (benzocyclclobutene; BCB), HSQ (hydrogen silsesquioxane), MSQ (methyl silesquioxane), silica hydrocarbons (SiOC-H) or other material or above-mentioned combination) or above-mentioned combination.The material of conductive layer 60 then comprises transparent material (as: indium tin oxide, aluminium zinc oxide, aluminium tin-oxide, indium-zinc oxide, cadmium tin-oxide or other material or above-mentioned combination), reflection material (as: gold, silver, copper, iron, tin, lead, cadmium, molybdenum, tungsten, neodymium, titanium, tantalum, hafnium or other material or above-mentioned oxide or above-mentioned nitride or above-mentioned nitrogen oxide or above-mentioned alloy or above-mentioned combination) or above-mentioned combination.Embodiments of the invention be with dielectric layer 52 be about 100 dusts of thickness by the formed silicon dioxide of tetrem alkyl oxygen silicomethane, and conductive layer 60 is used as the enforcement example for molybdenum, is not limited to this.
As shown in Figure 7, form a metal level (figure does not show) subsequently on inner layer dielectric layer 64, and carry out a patterning manufacture craft, remove the metal level of part, with in form two electrodes 74 (also being called source/drain) on the inner layer dielectric layer 64 of transistor area 44, in forming the electrode 76 (third electrode that also is called electric capacity) of an electric capacity on the inner layer dielectric layer 64 of capacitive region 46 and on another patterned semiconductor layer 66 of optical sensing area 48, forming two electrodes 78 (also being called source/drain).So far the making of promptly finishing a thin-film transistor 88, finishing a storage capacitors 90 and finish an OPTICAL SENSORS 92 at optical sensing area 48 in capacitive region 46 in transistor area 44.Wherein, storage capacitors 90 second electric capacity that to be first electric capacity that is made of second electrode of first electrode of electric capacity (being the patterned semiconductor 50 on the capacitive region), dielectric layer 52 and electric capacity (being patterning first conductive layer 60 on the capacitive region) constituted with third electrode 76 by second electrode (being patterning first conductor layer 60 on the capacitive region), inner layer dielectric layer 64 and the electric capacity of electric capacity is example, but do not limit this, storage capacitors 90 also can by first electric capacity and second electric capacity wherein institutes constitute.It should be noted that, thin-film transistor 88 of the present invention is thin-film transistor structures of a top grid (top gate), but be not limited to this production method, the present invention can adopt the design of bottom-gate (bottom gate) again according to the demand of manufacture craft, and this all belongs to the scope that the present invention is contained.In addition, the similar of OPTICAL SENSORS 92 of the present invention is in the design of bottom-gate, but is not limited thereto, and also may be selected to be top grid, diode or other design.Moreover, the third electrode 76 of two electrodes 74 of the present invention, electric capacity and the formation method of two electrodes 78, being to use deposition/gold-tinted/etching process is example, but be not limited thereto, also optionally use inkjet-fabricated technology, screen painting manufacture craft or other method or above-mentioned combination.
As shown in Figure 8; then cover a patterned protective layer 80 on the semiconductor layer 66 of the third electrode 76 of the electric capacity of the electrode 74 of transistor area 44, capacitive region 46 and optical sensing area 48 and electrode 78; and in wherein having at least one opening 82, and make opening 82 expose one of them of two electrodes 74.Then form another patterned conductive layer (also being called second patterned conductive layer) on protective layer 80.Another patterned conductive layer has one first part, 84 and one second portion 86; be respectively formed on the protective layer 80 of transistor area 44 and optical sensing area 48 so that first partly another patterned conductive layer of 84 be that another patterned conductive layer of electrically connecting one of them second portion 86 of two electrodes 74 then is on the protective layer 80 that is arranged in fact between two electrodes 78 of optical sensing area 78.Moreover; patterned protective layer 80 of the present invention and another patterned conductive layer be at least one formation method wherein; being to use deposition/gold-tinted/etching process is example; but be not limited thereto, also optionally use inkjet-fabricated technology, screen painting manufacture craft or other method or above-mentioned combination.Wherein, wherein at least one comprises inorganic (as: by the formed silicon dioxide of silicomethane, by the formed silicon dioxide of tetrem alkyl oxygen silicomethane, siliceous nitrogen oxide or other material or above-mentioned combination), organic material (as: photoresistance, poly-third vinegar ether (the polyarylene ether to the material of protective layer 80; PAE), poly-vinegar class, polyesters, polyalcohols, polyalkenes, benzocyclobutene (benzocyclclobutene; BCB), HSQ (hydrogen silsesquioxane), MSQ (methylsilesquioxane), silica hydrocarbons (SiOC-H) or other material or above-mentioned combination) or above-mentioned combination.The material of another patterned conductive layer then comprises transparent material (as: indium tin oxide, the aluminium zinc oxide, the aluminium tin-oxide, indium-zinc oxide, the cadmium tin-oxide, or other material, or above-mentioned combination), reflection material (as: gold, silver, copper, iron, tin, plumbous, cadmium, molybdenum, tungsten, neodymium, titanium, tantalum, hafnium, or other material, or above-mentioned oxide, or above-mentioned nitride, or above-mentioned nitrogen oxide, or above-mentioned alloy, or above-mentioned combination), or above-mentioned combination.Another patterned conductive layer of embodiments of the invention is that the indium tin oxide with transparent material is an example, but is not limited thereto.Must it should be noted that, be positioned at the pixel electrode that is that the second portion 84 of another patterned conductive layer on the transistor area 44 also can claim, and be positioned at the second grid that the second portion 86 of the patterned conductive layer on the optical sensing area 48 also can claim.In addition; because of another patterned conductive layer is covered on the capacitive region 46; make storage capacitors 90 also comprise extra capacitor (also be called the 3rd electric capacity, indicate), and its third electrode 76 by first part 84, protective layer 80 and the electric capacity of another patterned conductive layer is constituted.Yi Yan's, storage capacitors 90 have at least first electric capacity, second electric capacity and the 3rd electric capacity wherein at least one.
Referring again to Fig. 9, Fig. 9 is the top view of OPTICAL SENSORS 92 in Fig. 8 Photosensing Units.Shown in 8-9 figure; in the present embodiment; the second portion 86 of another patterned conductive layer is to be located at two electrodes 78 in fact on the protective layer 80 in centre position in the suspension joint mode; but be not limited thereto according to putting; also can be arbitrarily near two electrodes 78 wherein one or the side of second portion 86 trim wherein one side of two electrodes 78; for example, have one first spacing d1 and one second spacing d2 between the second portion 86 of another patterned conductive layer and the electrode 78 respectively.According to preferred embodiment of the present invention, the first spacing d1 is between about 2 microns to about 15 microns, and the second spacing d2 then is between about 0 micron to about 15 microns.Therefore, the ratio of the first spacing d1 and the second spacing d2 is about about 0 to about 7.5, but is not limited thereto, according to the required above-mentioned spacing and the ratio thereof of changing of design.Moreover the second portion 86 of another patterned conductive layer can be connected to different elements according to different application, and this all belongs to the scope that the present invention is contained.
Yet, be not limited to the method for attachment of first embodiment, the second portion 86 of another patterned conductive layer of the present invention can be connected to other elements according to the demand of manufacture craft, for example is electrically connected to a voltage source (as a specific voltage, earthed voltage or other voltage).Below enumerate the embodiment that the present invention carries out the second portion of another patterned conductive layer different connected modes.
Please refer to Figure 10 to Figure 11, the top view that Figure 10 electrically connects the second portion 86 of another patterned conductive layer of OPTICAL SENSORS 92 for second embodiment of the invention, Figure 11 then are along the generalized section of tangent line AA ' among Figure 10.As shown in FIG., one of second portion 86 of another patterned conductive layer end is suspension joint and is located on the centre position in fact of two electrodes 78 in the present embodiment, but be not limited thereto the position, also can select aforementioned described design, the other end of second portion 86 then is one of them of extension and two electrodes 78 that electrically connect OPTICAL SENSORS 92.
Please refer to Figure 12 to Figure 13, the top view that Figure 12 electrically connects the second portion 86 of another patterned conductive layer of OPTICAL SENSORS 92 for third embodiment of the invention, Figure 13 are along the generalized section of tangent line BB ' and CC ' among Figure 12.As the second above-mentioned embodiment, one of second portion 86 of another patterned conductive layer end is suspension joint and is located on the centre position in fact of two electrodes 78 in the present embodiment, but be not limited thereto the position, also can select aforementioned described design, the other end then is one of them of extension and two electrodes 78 that are electrically connected to OPTICAL SENSORS 92.Except that this, present embodiment will be located at patterned conductive layer 60 on the dielectric layer 52 again simultaneously and extend to one of them close position of two electrodes 78, and one of second portion 86 end that makes another patterned conductive layer except connect two electrodes 78 wherein one extend and electrically connect the patterned conductive layer 60 on electrode 78 next doors again simultaneously.
Please refer to Figure 14 to Figure 15, the top view that Figure 14 electrically connects the second portion 86 of another patterned conductive layer of OPTICAL SENSORS 92 for fourth embodiment of the invention, Figure 15 are along the generalized section of tangent line DD ' and EE ' among Figure 14.As shown in FIG., present embodiment mainly is the length that prolongs the second portion 86 of patterned conductive layer 60 and another patterned conductive layer simultaneously, and make one of second portion 86 end suspension joint and be located at position on the centre position in fact of two electrodes 78, but be not limited thereto the position, also can select aforementioned described design, the other end then electrically connects the patterned conductive layer 60 of prolongation.
It should be noted that, the disclosed Photosensing Units of the foregoing description, though can or can not follow the manufacture craft of TFT-LCD is narrated, but the structure of Photosensing Units of the present invention also can correspondingly be used for relative production technologies such as other flat-panel screens and semiconductor with manufacture craft, and being not limited to this, the position of Photosensing Units also can be considered according to differences such as product demand or function designs and be disposed in addition.
See also the 5th, the 6th embodiment of Figure 16, Figure 17, be the above-mentioned Photosensing Units of the present invention and be applied to schematic diagram on the display floater 120.Moreover the above-mentioned Photosensing Units of the present invention is applied to wherein at least one of the viewing area of a display floater 120 and non-display area.Please refer to Figure 16, Figure 16 is arranged on Photosensing Units for the present invention the schematic diagram of the non-display area of one display floater 120.As shown in figure 16, display floater of the present invention has a viewing area 122 and a non-display area 124, and display floater 120 includes a plurality of image element structures 218 and is located at viewing area 122, to demonstrate image and color in the viewing area 122 of display floater 120, and at least one place in the non-display area 124 is located at least one light sensing zone 202, and present embodiment is at least one corner of being adjacent to display floater 120 for implementing example, but is not limited thereto.Just, light sensing zone 202 be arranged on the contiguous position intermediate at least on one side at least one corner in the non-display area 124, the non-display area, on the position in the contiguous corner on one side at least in the non-display area or other position or above-mentioned combination.And light sensing zone 202 comprises and is electrically connected at least one drive circuit 230 by wherein at least one described at least one Photosensing Units (figure do not show) of the above embodiment of the present invention, and drive circuit 230 electrically connects image element structures 218.Preferably, at least one light sensing zone 202 is used for being used as an environment light source sensing area (ambient light sensing area), and its sensitive context light wavelength comprise visible light wave range, invisible light wave band (as: ultraviolet wave band, infrared ray wave band or other wave band) wherein at least one.Therefore, the signal that Photosensing Units transmitted in light sensing zone 202 optionally assists display floater to show preferable picture.Moreover drive circuit 230 of the present invention comprises that optionally a signal drive circuit 128, a light source driving circuit 130, power supply provide the combination of circuit, signal processing circuit or other functional circuit or said two devices.Again, display floater 120 comprises a light emitting source 132 in addition and comprises point-source of light (as: inorganic light-emitting diode, Organic Light Emitting Diode or above-mentioned combination), fluorescent lamp (as: cold cathode fluorescent lamp pipe, hot-cathode fluorescent light tube, outer electrode fluorescent lamp, plane fluorescent lamp or other or above-mentioned combination), surface emitting light source (as: carbon nanotube light emitting source, luminescence of plasma source or other or above-mentioned combination) or above-mentioned combination.In addition, above-mentioned light emitting source optionally applies to direct-light-type backlight or side-light type back light.For instance, drive circuit 230 is if apply to display panels, then drive circuit comprises signal drive circuit 128 and light source driving circuit 130 at least, to drive a plurality of image element structures 218 and light emitting source 132 respectively or if apply to organic electro-luminescent display, then drive circuit comprises signal drive circuit 128 and power supply at least provides circuit (not shown) to drive and to provide a plurality of image element structure 218 required signal and power supply respectively.Secondly, display floater 120 can be provided with a circuit board (circuit board, not shown) again on part non-display area 124, is used for connecting other external control elements, and wherein this circuit board comprises printed circuit board (PCB), flexible circuit board or above-mentioned combination.
According to a sixth embodiment of the invention, as shown in figure 17, the light sensing zone be arranged on non-display area 124 at least on one side on, present embodiment is serve as the enforcement example on three limits that are arranged on non-display area 124, but is not limited thereto.Moreover, present embodiment is to be adjacent to the width of one of viewing area 122 side to another side that is adjacent to display floater 120 (for example non-display area 124 edges) with light sensing zone 202, preferably, come down to be less than or equal to 0.4 millimeter (mm) for implementing example, but be not limited thereto, according to permission and other requirement (for example: narrow frame, require big display area or other factors) of design.
In addition, Photosensing Units is finished with the disclosed production method of the foregoing description, then light sensing zone 202 can only be located in the non-display area 124, only be arranged in the viewing area 122 or be arranged on non-display area 124 simultaneously and viewing area 122 in.When light sensing zone 202 was located at non-display area 124, it can be arranged at least one corner of being adjacent to display floater 120, be to be surrounded on around the viewing area 122 or other position, in order to the environment light source in the sensing external world.For instance, as described in Figure 17, when light sensing zone 202 is located at non-display area 124, it is to be surrounded on around the viewing area 122 in fact or as shown in figure 18, Figure 18 is arranged on light sensing zone 202 for seventh embodiment of the invention schematic diagram in the image element structure 218 of at least one part in the viewing area 122 of display floater 120 for implementing example, but be not limited thereto, image element structure 218 that also can be whole is provided with light sensing zone 202.
Learn that according to the embodiment of above-mentioned display unit by wherein a kind of functions of the Photosensing Units in the light sensing zone 202 (figure does not show) are variations of ambient light and light and shade to external world, transmit signal to the drive circuit 230 described in the above-mentioned embodiment via a sensing circuit (figure does not show), it is optionally assisted and/or adjust the fineness of the color of a plurality of picture elements 218 in the viewing area 122 and the sharp degree of brightness, allow display floater 120 that optimized image quality is provided.
Please refer to Figure 19, it is with the light sensing zone 202 of at least one Photosensing Units and the first embodiment circuit diagram of at least one sensing circuit 134 electric connections.As shown in the figure, sensing circuit 134, be connected in the light sensing zone one of them person of two electrodes of 202 Photosensing Units 126, and sensing circuit 134 includes one first signal source 220, a secondary signal source 224 and one first voltage source 222, preferably, the signal in first signal source 220 and secondary signal source 224, inequality in fact, but be not limited thereto, also can be identical in fact.And two electrodes of Photosensing Units 126 another person wherein optionally connects or be not attached to another voltage source (not indicating), if two electrodes another person wherein of Photosensing Units 126 connects another voltage source (not indicating), then preferably inequality in fact with first voltage source 222, but be not limited thereto, also can be identical in fact.In addition, this embodiment be with one be example, but be not limited thereto, also optionally have a plurality of Photosensing Units (as: 1,2,3,4 or the like), and its a plurality of Photosensing Units can parallel connection and/or series system connect.
In addition, optionally use an amplifier 136 or an amplifier 136 and a first transistor 138, wherein, amplifier 136 has two inputs 154, is connected to one of them person of two electrodes of the Photosensing Units 126 in the light sensing zone 202 and a source of reference potential 226 and an output 156 respectively and is connected to drive circuit (figure does not show); The first transistor 138 has two inputs, 154 one of them person that source (158/160) is connected to amplifier 136, and another drain/source (158/160) is connected to drive circuit (figure does not show) and a grid 162 is connected to a reset signal source 228.In present embodiment, preferably, reset signal source 228, first signal source 220 and secondary signal source 224 wherein at least one is inequality in fact.Just, first signal source 220 is different in essence in secondary signal source 224 as mentioned above, and reset signal source 228 optionally is same as first signal source 200 in fact, is same as the inequality in fact of secondary signal source 224 or three.
For the described sensing circuit 134 of present embodiment, for example, comprise a transistor seconds 140 and one the 3rd transistor 142; Wherein, transistor seconds 140, have one of them person of two electrodes of the Photosensing Units 126 in source (148/144) the connection light sensing zone 202, a grid 146 is connected to first signal source 220 and another drain/source (148/144), then is connected to first voltage source 222; 142 in the 3rd transistor has two inputs, 154 one of them person that source (214/150) is connected to amplifier 136, and one of them person of Photosensing Units 126 2 electrodes and a grid 152 that another source/drain (214/150) then is connected in the light sensing zone 202 are connected to secondary signal source 224.Generally speaking, the circuit diagram of present embodiment preferably, applies on the non-display area that the light sensing zone is arranged at display floater, but is not limited thereto.Moreover the described transistor of present embodiment is that the transistor with P-type serves as to implement example, also optionally uses transistor or the transistorized combination of above-mentioned kenel of N-type.In addition, the transistor that sensing circuit comprised is to serve as to implement example with two transistors in present embodiment, but be not limited thereto, also can be according to design requirement (as: reliability, cost, minimum design area etc.), select the transistor size (as: 1,2,3,4 or the rest may be inferred) of sensing circuit.
Moreover, must be noted that, the light sensing zone 202 of present embodiment is only to comprise a Photosensing Units 126 (that is the described element that is similar to the bottom-gate structure of the foregoing description is only arranged) in wherein, and the thin-film transistor (that is the described element that is similar to the top grid structure of the foregoing description is only arranged) of its above thin film transistor region is used as one of them thin-film transistor of sensing circuit and is illustrated, but be not limited thereto, light sensing zone 202 can comprise 2,3,4,5 are waited the above the thin-film transistor (that is the described element that is similar to top gate structure of the foregoing description is only arranged) of thin film transistor region of Photosensing Units 126 and/or its not to be used as one of them thin-film transistor of sensing circuit and to be present in the light sensing zone 202, and its several comprise 1,2,3,4 etc.
Please refer to Figure 20, Figure 20 at least one part picture element (also being called image element structure) in the viewing area 122 that Photosensing Units 126 is arranged on display floater 120 or whole picture elements the time, the second embodiment circuit diagram of light sensing zone 202 and one sensing circuit, 164 electric connections.As shown in the figure, sensing circuit 164 is arranged in the image element structure or whole image element structure (figure does not show) of at least one part of viewing area, is connected in one of them person of two electrodes of the Photosensing Units 126 in the light sensing zone 202.Wherein, sensing circuit 164 is to serve as to implement example to be electrically connected at one first selection wire 170, one second selection wire 172, one first voltage source 210 and to be connected at least one amplifier 174, also optionally is electrically connected at wherein one of first selection wire 170 and one second selection wire 172, one first voltage source 210 and is connected at least one amplifier 174 or the selection wire more than three and three.
In the viewing area picture element (figure does not show), preferably, comprise at least one the first transistor 166 and at least one electric capacity 168 and be the enforcement example, but be not limited thereto, also optionally comprise transistor and/or the electric capacity more than two more than two.The first transistor 166 has that a grid 176 is connected at least one scan line 178, source (182/180) is connected in a data wire 184; And electric capacity 168 is electrically connected at the first transistor 166, and optionally be electrically connected at least one common electrode line 212 and partly scan line 178 wherein at least one.In addition, if when sensing circuit 164 optionally is electrically connected at first selection wire 170 and one second selection wire 172 wherein one the time, when promptly having only a selection wire, in order to increase aperture opening ratio, preferably, Ci Shi selection wire promptly is used as scan line or is extended to scan line.In addition, if optionally be electrically connected at first selection wire 170 and one second selection wire 172 when sensing circuit 164, in order to increase aperture opening ratio, preferably, first selection wire 170 and one second selection wire 172 wherein one be used as scan line, but also be not limited thereto.
For the described sensing circuit 164 of present embodiment, for example, comprise a transistor seconds 186 and one the 3rd transistor 188; Wherein, transistor seconds 186 has a grid 190 and is connected in one of them person of this two electrode and another source/drain 192/194 that first selection wire 170, source 192/194 be connected in the Photosensing Units 126 in the light sensing zone 202 and is connected in first voltage source 210; The 3rd transistor 188, have a grid 196 and be connected in second selection wire 172, one of them person of this two electrode and another source/drain 198/200 that source 198/200 is connected in the Photosensing Units 126 in the light sensing zone 202 are connected in amplifier 174, but be not limited thereto, the transistor that sensing circuit comprised is to serve as to implement example with two transistors in present embodiment, but be not limited thereto, also can be according to design requirement (as: reliability, cost, minimum design area etc.), select (as: 1 of the transistor size of sensing circuit, 2,3,4, or the rest may be inferred), for example use a transistor to be electrically connected at a selection wire and operate, or the transistor more than three connects at least two selection wire, or other.Wherein, transistor has a grid and is connected in one of them person of this two electrode and another source/drain that this selection wire, source be connected in this Photosensing Units in this light sensing zone and is connected in this amplifier 174.Moreover the described transistor of present embodiment is that the transistor with N-type serves as to implement example, also optionally uses transistor or the transistorized combination of above-mentioned kenel of P-type.In addition, the light sensing zone 202 of present embodiment is only to comprise a Photosensing Units 126 (that is the described element that is similar to the bottom-gate structure of the foregoing description is only arranged) in wherein, and the thin-film transistor (that is the described element that is similar to the top grid structure of the foregoing description is only arranged) of its above thin film transistor region is used as one of them thin-film transistor of sensing circuit and is illustrated, but be not limited thereto, light sensing zone 202 can comprise 2,3,4,5 are waited the above the thin-film transistor (that is the described element that is similar to top gate structure of the foregoing description is only arranged) of thin film transistor region of Photosensing Units 126 and/or its not to be used as one of them thin-film transistor of sensing circuit and to be present in the light sensing zone 202, and its several comprise 1,2,3,4 etc.Again, if, at least one Photosensing Units at least one light sensing zone, has at least one Photosensing Units 126 (that is the described element that is similar to the bottom-gate structure of the foregoing description is only arranged) in wherein, and the thin-film transistor (that is the described element that is similar to the top grid structure of the foregoing description is only arranged) of its above thin film transistor region, preferably, more comprise at least another electric capacity in the light sensing zone, and electrically in above-mentioned Photosensing Units 126 (that is the described element that is similar to the bottom-gate structure of the foregoing description is only arranged) in wherein, and the thin-film transistor (that is the described element that is similar to the top grid structure of the foregoing description is only arranged) of its above thin film transistor region.
Moreover, if more simplify circuit design and increase the aperture opening ratio of each picture element, then the circuit diagram of another variation of present embodiment optionally changes in the viewing area picture element (figure does not show), preferably, comprise at least one the first transistor 166, at least one scan line 178, at least one data wire 184, at least one electric capacity 168, at least one drive circuit 164, first voltage source 210 and at least one light sensing zone 202 with at least the second thin-film transistor 186.The first transistor 166 has that grid 176 is electrically connected at scan line 178, source/drain 182/180 is electrically connected at data wire 184 and electric capacity 168 is electrically connected at the first transistor 166, and optionally be electrically connected at least one common electrode line 212 and partly scan line 178 wherein at least one.The light sensing zone 202 of present embodiment is only to comprise a Photosensing Units 126 (that is the described element that is similar to the bottom-gate structure of the foregoing description is only arranged) in wherein, and the thin-film transistor (that is the described element that is similar to the top grid structure of the foregoing description is only arranged) of its above thin film transistor region is used as one of them thin-film transistor of sensing circuit, but be not limited thereto, light sensing zone 202 can comprise 2,3,4,5 are waited the above the thin-film transistor (that is the described element that is similar to top gate structure of the foregoing description is only arranged) of thin film transistor region of Photosensing Units 126 and/or its not to be used as one of them thin-film transistor of sensing circuit and to be present in the light sensing zone 202, and it comprises 1,2,3,4 etc.Again, if, at least one Photosensing Units at least one light sensing zone, has at least one Photosensing Units 126 (that is the described element that is similar to the bottom-gate structure of the foregoing description is only arranged) in wherein, and the thin-film transistor (that is the described element that is similar to the top grid structure of the foregoing description is only arranged) of its above thin film transistor region, preferably, more comprise at least another electric capacity in the light sensing zone, and electrically in above-mentioned Photosensing Units 126 (that is the described element that is similar to the bottom-gate structure of the foregoing description is only arranged) in wherein, and the thin-film transistor (that is the described element that is similar to the top grid structure of the foregoing description is only arranged) of its above thin film transistor region.At this moment, when light sensing zone 202 only to comprise a Photosensing Units 126 (that is the described element that is similar to the bottom-gate structure of the foregoing description is only arranged) in wherein, and the thin-film transistor (that is the described element that is similar to the top grid structure of the foregoing description is only arranged) of its above thin film transistor region is when being used as one of them thin-film transistor of sensing circuit, the element of top grid structure has a grid 190 and is electrically connected at scan line 178, source/drain 198/200 is electrically connected at amplifier 174, is electrically connected at first voltage source 210 and the element of bottom-gate structure has a grid (not shown), source/drain (not shown) is electrically connected at first voltage source 210 and grid (not shown) thereof, and another source/drain (not shown) is electrically connected at another source/drain 198/200 that the element of top grid structure has.The element number of the similar top grid structure that again, the Photosensing Units of this variation had comprises 1,2,3 etc.
Comprehensive above-mentioned explanation, as shown in figure 21, the Photosensing Units 126 in light sensing of the present invention zone can be applicable to outside the embodiment of display floater, the utilization on other light/electric functional elements, for example solar cell (solar cell), charge coupled cell (Charge Coupled Device; CCD), touch controllable function etc. also can be the present invention's a kind of range of application of Photosensing Units or at least one function that display floater comprises the utilization on above-mentioned light/electric functional elements.Electrooptical device 204 can comprise above-mentioned the have display floater 120 in light sensing zone and the electronic component 206 that connects display floater 120.For example, electronic component 206 comprises as control element, executive component, treatment element, input element, memory element, driving element, light-emitting component, protection component, sensing element, detecting element or other function element or above-mentioned combination.Moreover, classify according to the layer that two opposing substrates of display floater are inserted and put with dielectric coefficient, display floater, comprise display panels (as: penetrating type display floater, the semi penetration type display floater, reflective display panel, colored filter display floater of (color filter on array) on active layers, active layers display floater of (array on color filter) on colored filter, vertical orientation type (VA) display floater, horizontal switch type (IPS) display floater, multi-domain perpendicular alignment-type (MVA) display floater, twisted nematic (TN) display floater, super-twist nematic (STN) display floater, pattern vertical orientation type (PVA) display floater, super pattern vertical orientation type (S-PVA) display floater, the advanced person is type (ASV) display floater with great visual angle, fringe field switch type (FFS) display floater, continuous fireworks shape arrange type (CPA) display floater, axial symmetry is arranged micella type (ASM) display floater, optical compensation curved arrange type (OCB) display floater, super horizontal switch type (S-IPS) display floater, advanced super horizontal switch type (AS-IPS) display floater, extreme edge electric field switch type (UFFS) display floater, stabilizing polymer alignment-type display floater, double vision angle type (dual-view) display floater, three visual angle type (triple-view) display floaters, 3 d display (three-dimensional) or other profile plate, or above-mentioned combination), organic electric-excitation luminescent displaying panel (as: fluorescent organic electric-excitation luminescent displaying panel, the phosphorescence organic electric-excitation luminescent displaying panel, or above-mentioned combination or above-mentioned combination).Wherein, the luminous organic material of organic electric-excitation luminescent displaying panel comprises micromolecule luminescent material, high-molecular luminous material or above-mentioned combination.In addition, when if display floater is display panels, in the described viewing area of the foregoing description picture element (figure does not show), except at least one electric capacity, preferably also comprise at least one liquid crystal capacitance, by another patterned conductive layer first partly 84, the common electrode that had of liquid crystal layer and subtend substrate constituted.Moreover display floater can apply to the panel in portable product (as mobile phone, video camera, camera, notebook computer, game machine, wrist-watch, music player, electronic mail transceiver, digital photo frame, map navigator or similar products like), video and audio product (as audio-visual projector or similar products like), screen, TV, indoor and/or outdoor billboard, guiding device, the projector etc.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (41)
1. Photosensing Units comprises:
One substrate has a transistor area and an optical sensing area on this substrate;
One has first patterned semiconductor layer of first state, is formed on this substrate of this transistor area, and it has one first doped region and one second doped region;
One dielectric layer is covered on this first patterned semiconductor layer of this substrate and this transistor area;
One patterned conductive layer is formed on this dielectric layer on this transistor area and this optical sensing area;
One inner layer dielectric layer, be covered on this dielectric layer and this patterned conductive layer on, it has this first doped region and this second doped region that at least two holes expose this first patterned semiconductor layer of part respectively;
One has second patterned semiconductor layer of second state, is formed on this optical sensing area;
2 first electrodes are formed on this inner layer dielectric layer, and electrically connect this first patterned semiconductor layer; And
2 second electrodes are formed on this second patterned semiconductor layer.
2. Photosensing Units according to claim 1 is characterized in that, first state of this first patterned semiconductor layer is different in essence in second state of this second patterned semiconductor layer.
3. Photosensing Units according to claim 1 is characterized in that, more comprises a patterning protective layer, is covered on this patterning inner layer dielectric layer to reach on this patterned conductive layer.
4. Photosensing Units according to claim 3, it is characterized in that, more comprise another patterned conductive layer, has one first part and one second partly, be formed at respectively on this dielectric layer of this transistor area and this optical sensing area, so that this first partly is electrically connected at these first electrodes wherein one and these are second partly in fact between these second electrodes.
5. Photosensing Units according to claim 4 is characterized in that, has one first spacing and one second spacing respectively between this second part and these second electrodes.
6. Photosensing Units according to claim 5 is characterized in that, the ratio of this first spacing and this second spacing is about 0 to about 7.5.
7. Photosensing Units according to claim 4 is characterized in that, this second part is electrically connected to a voltage source.
8. Photosensing Units according to claim 4 is characterized in that, this second partly be electrically connected these second electrodes wherein one with in this patterned conductive layer of this optical sensing area wherein at least one.
9. Photosensing Units according to claim 1 is characterized in that, more comprises at least one storage capacitors, is formed on the capacitive region of this substrate, and is electrically connected at these first electrodes wherein on this transistor area.
10. method of making Photosensing Units comprises:
One substrate is provided, has a transistor area and an optical sensing area on this substrate;
Form one and have first patterned semiconductor layer of first state, on this substrate of this transistor area, it has one first doped region and one second doped region;
Cover a dielectric layer, on this first patterned semiconductor layer of this substrate and this transistor area;
Form a patterned conductive layer, on this dielectric layer on this transistor area and this optical sensing area;
Cover an inner layer dielectric layer, on this dielectric layer and on this patterned conductive layer, it has this first doped region and this second doped region that at least two holes expose this first patterned semiconductor layer of part respectively;
Form one and have second patterned semiconductor layer of second state, on this optical sensing area;
Form 2 first electrodes, on this inner layer dielectric layer, and electrically connect this first patterned semiconductor layer; And
Form 2 second electrodes, on this second patterned semiconductor layer.
11. method according to claim 10 is characterized in that, first state of this first patterned semiconductor layer is different in essence in second state of this second patterned semiconductor layer.
12. method according to claim 10 is characterized in that, more comprises to cover a patterning protective layer, on this patterning inner layer dielectric layer and on this patterned conductive layer.
13. method according to claim 12, it is characterized in that, more comprising provides another patterned conductive layer, has one first part and one second partly, be formed at respectively on this dielectric layer of this transistor area and this optical sensing area, so that this first partly is electrically connected at these first electrodes wherein one and these are second partly in fact between these second electrodes.
14. method according to claim 13 is characterized in that, has one first spacing and one second spacing respectively between this second part and these second electrodes.
15. method according to claim 14 is characterized in that, the ratio of this first spacing and this second spacing is about 0 to about 7.5.
16. method according to claim 13 is characterized in that, this second part is electrically connected to a voltage source.
17. method according to claim 13 is characterized in that, this second partly be electrically connected these second electrodes wherein one with in this patterned conductive layer of this optical sensing area wherein at least one.
18. method according to claim 1 is characterized in that, more comprises at least one storage capacitors, is formed on the capacitive region of this substrate, and is electrically connected at these first electrodes wherein on this transistor area.
19. a display floater has a viewing area and a non-display area, comprises:
A plurality of picture elements are located at this viewing area;
At least one drive circuit electrically connects those picture elements; And
At least one light sensing zone has at least one Photosensing Units and is electrically connected at this drive circuit, and this Photosensing Units comprises:
One substrate has a transistor area and an optical sensing area on this substrate;
One has first patterned semiconductor layer of first state, is formed on this substrate of this transistor area, and it has one first doped region and one second doped region;
One dielectric layer is covered on this first patterned semiconductor layer of this substrate and this transistor area;
One patterned conductive layer is formed on this dielectric layer on this transistor area and this optical sensing area;
One inner layer dielectric layer, be covered on this dielectric layer and this patterned conductive layer on, it has this first doped region and this second doped region that at least two holes expose this first patterned semiconductor layer of part respectively;
One has second patterned semiconductor layer of second state, is formed on this optical sensing area;
2 first electrodes are formed on this inner layer dielectric layer, and electrically connect this first patterned semiconductor layer; And
2 second electrodes are formed on this second patterned semiconductor layer.
20. display floater according to claim 19 is characterized in that, first state of this first patterned semiconductor layer is different in essence in second state of this second patterned semiconductor layer.
21. display floater according to claim 19 is characterized in that, more comprises a patterning protective layer, is covered on this patterning inner layer dielectric layer to reach on this patterned conductive layer.
22. display floater according to claim 21, it is characterized in that, more comprise another patterned conductive layer, has one first part and one second partly, be formed at respectively on this dielectric layer of this transistor area and this optical sensing area, so that this first partly is electrically connected at these first electrodes wherein one and these are second partly in fact between these second electrodes.
23. display floater according to claim 22 is characterized in that, has one first spacing and one second spacing respectively between this second part and these second electrodes.
24. display floater according to claim 23 is characterized in that, the ratio of this first spacing and this second spacing is about 0 to about 7.5.
25. display floater according to claim 22 is characterized in that, this second part is electrically connected to a voltage source.
26. display floater according to claim 22 is characterized in that, this second partly be electrically connected these second electrodes wherein one with in this patterned conductive layer of this optical sensing area wherein at least one.
27. display floater according to claim 19 is characterized in that, more comprises at least one storage capacitors, is formed on the capacitive region of this substrate, and is electrically connected at these first electrodes wherein on this transistor area.
28. display floater according to claim 19 is characterized in that, this drive circuit comprises signal drive circuit, light source driving circuit or above-mentioned combination.
29. display floater according to claim 19 is characterized in that, this light sensing zone is located in this non-display area and is adjacent to the corner of this display floater.
30. display floater according to claim 19 is characterized in that, this light sensing zone is located in this non-display area and is surrounded on this viewing area in fact.
31. display floater according to claim 19 is characterized in that, more comprises a light emitting source and this drive circuit and electrically connects.
32. according to claim 29 or 30 described display floaters, it is characterized in that, more comprise:
One sensing circuit is connected in one of them person of these second electrodes, one first signal source, a secondary signal source and one first voltage source of this Photosensing Units in this light sensing zone;
One amplifier has two inputs, connects one of them person of these second electrodes and a source of reference potential of this Photosensing Units in this light sensing zone respectively, is connected to this drive circuit with an output; And
One the first transistor comprises that source is connected to one of them person of two inputs of this amplifier, and another source/drain is connected to this drive circuit and a grid is connected to a reset signal source.
33. display floater according to claim 32 is characterized in that, this sensing circuit comprises:
One transistor seconds has one of them person of these second electrodes that source connects this Photosensing Units in this light sensing zone, and a grid is connected to this first signal source and another drain/source is connected to this first voltage source; And
One the 3rd transistor has one of them person and the grid that source is connected to two inputs of this amplifier respectively and is connected to this secondary signal source.
34. display floater according to claim 33 is characterized in that, at least one of this first signal source, this secondary signal source and this reset signal source is essentially inequality.
35. display floater according to claim 19 is characterized in that, this light sensing zone is arranged in the picture element of at least one part in this viewing area.
36. display floater according to claim 35 is characterized in that, more comprises:
One sensing circuit is arranged in these picture elements of part, and is electrically connected at one of them person of this two electrode of this Photosensing Units at least one selection wire, one first voltage source, at least one amplifier and this sensing region;
One the first transistor is arranged at respectively in this picture element, and its have a grid be connected at least one data wire, one source pole, and a drain electrode be connected in this scan line; And
At least one electric capacity is electrically connected at this first transistor.
37. display floater according to claim 36 is characterized in that, this sensing circuit comprises:
At least one transistor seconds has a grid and is connected in one of them person of this two electrode and another source/drain that this selection wire, source be connected in this Photosensing Units in this light sensing zone and is connected in this amplifier.
38. display floater according to claim 19 is characterized in that, this optical sensing area is separately positioned on this viewing area and this non-display area.
39. the formation method of a display floater comprises the formation method of Photosensing Units according to claim 10.
40. an electrooptical device comprises according to claim 19,29,30 or 35 described display floaters.
41. the formation method of an electrooptical device comprises the formation method according to the described display floater of claim 39.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997022A (en) * | 2009-08-10 | 2011-03-30 | 三星移动显示器株式会社 | Organic light emitting display apparatus and method of manufacturing organic light emitting display apparatus |
| CN101770316B (en) * | 2010-01-08 | 2012-08-22 | 友达光电股份有限公司 | Optical sensing device and display with optical sensing device |
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