CN101118866A - Method for improving STI-CMP terminal detection - Google Patents
Method for improving STI-CMP terminal detection Download PDFInfo
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- CN101118866A CN101118866A CNA2006100296114A CN200610029611A CN101118866A CN 101118866 A CN101118866 A CN 101118866A CN A2006100296114 A CNA2006100296114 A CN A2006100296114A CN 200610029611 A CN200610029611 A CN 200610029611A CN 101118866 A CN101118866 A CN 101118866A
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- Prior art keywords
- silicon nitride
- sti
- cmp
- end point
- mechanical polishing
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
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Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100296114A CN100501967C (en) | 2006-08-01 | 2006-08-01 | Method for improving STI-CMP terminal detection |
Applications Claiming Priority (1)
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CNB2006100296114A CN100501967C (en) | 2006-08-01 | 2006-08-01 | Method for improving STI-CMP terminal detection |
Publications (2)
Publication Number | Publication Date |
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CN101118866A true CN101118866A (en) | 2008-02-06 |
CN100501967C CN100501967C (en) | 2009-06-17 |
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CNB2006100296114A Expired - Fee Related CN100501967C (en) | 2006-08-01 | 2006-08-01 | Method for improving STI-CMP terminal detection |
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CN (1) | CN100501967C (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101728291B (en) * | 2008-10-14 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Method for determining height of insulating material in shallow trench |
CN102390036A (en) * | 2011-10-28 | 2012-03-28 | 中国科学院微电子研究所 | Chemical-mechanical grinding end-point detecting method and system based on shallow trench isolation technology |
CN103855070A (en) * | 2012-11-29 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | Method for flattening shallow trench isolation of ultra-low-density active region |
-
2006
- 2006-08-01 CN CNB2006100296114A patent/CN100501967C/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101728291B (en) * | 2008-10-14 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Method for determining height of insulating material in shallow trench |
CN102390036A (en) * | 2011-10-28 | 2012-03-28 | 中国科学院微电子研究所 | Chemical-mechanical grinding end-point detecting method and system based on shallow trench isolation technology |
CN102390036B (en) * | 2011-10-28 | 2014-04-02 | 中国科学院微电子研究所 | Chemical-mechanical grinding end-point detecting method and system based on shallow trench isolation technology |
CN103855070A (en) * | 2012-11-29 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | Method for flattening shallow trench isolation of ultra-low-density active region |
Also Published As
Publication number | Publication date |
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CN100501967C (en) | 2009-06-17 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131219 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20131219 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Hua Hong NEC Electronics Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090617 Termination date: 20210801 |