CN101118111A - Multiple layer synthesis furnace device - Google Patents

Multiple layer synthesis furnace device Download PDF

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Publication number
CN101118111A
CN101118111A CNA2007100498854A CN200710049885A CN101118111A CN 101118111 A CN101118111 A CN 101118111A CN A2007100498854 A CNA2007100498854 A CN A2007100498854A CN 200710049885 A CN200710049885 A CN 200710049885A CN 101118111 A CN101118111 A CN 101118111A
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CN
China
Prior art keywords
synthetic
furnace
chamber
multiple layer
insulation board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007100498854A
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Chinese (zh)
Other versions
CN101118111B (en
Inventor
侯仁义
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sichuan Xinlong Tellurium Industry & Technique Development Co.,Ltd.
Original Assignee
侯仁义
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 侯仁义 filed Critical 侯仁义
Priority to CN200710049885A priority Critical patent/CN101118111B/en
Publication of CN101118111A publication Critical patent/CN101118111A/en
Application granted granted Critical
Publication of CN101118111B publication Critical patent/CN101118111B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The present invention relates to a multilayer compound synthetic furnace device, which is characterized in that an insulation layer (2), a heating wire (3), an insulation board (4) and a synthetic reaction tube (5) are arranged in a synthetic furnace (1), the furnace chamber of the synthetic furnace is divided into a plurality of synthetic chambers with the insulation board, and a plurality of synthetic reaction tubes (5) are put in each synthetic chamber, the thermal field temperature gradient of the furnace chamber is controlled in less or equal to plus or minus 5 DEG C, and each synthetic chamber being separated ensures the security during the synthetic process. The multilayer compound synthetic furnace device is applied to the synthesis of cadmium telluride, zinc telluride and lead telluride.

Description

Multiple layer synthesis furnace device
Technical field
The present invention relates to a kind of multiple layer synthesis furnace device, belong to compounds forming apparatus field.
Background technology
Along with developing rapidly of world's new high-tech industry, world's new high-tech industry increases rapidly the demand of semiconducting compound, at present the conventional production methods of semiconducting compound and the shortcoming that there is the poor stability of production cost height, production in technology.Particularly be subjected to the little restriction of production equipment, can't realize semiconducting compound industrialization production, seriously hindered the development of new high-tech industry and microelectronics opto-electronics information material cause.
Summary of the invention
The objective of the invention is provides a kind of multiple layer synthesis furnace device at the deficiencies in the prior art, be characterized in adopting the heat-insulation layer of highiy refractory brick as synthetic furnace, carborunbum tube is as heating source, the temperature of thermal field of strict control furnace chamber inside evenly distributes, temperature of thermal field gradient≤± 5 ℃/cm.
Purpose of the present invention is realized by following technical measures:
Establish heat-insulation layer, heater strip, thermal insulation board and synthetic reaction pipe in the synthetic furnace of multiple layer synthesis furnace device, be divided into a plurality of synthetic chambers with thermal insulation board in the furnace chamber of synthetic furnace, each synthetic a plurality of synthetic reaction pipe of indoor placement, the temperature of thermal field of control furnace chamber inside evenly distributes, temperature of thermal field gradient≤± 5 ℃/cm, the security that has independently guaranteed building-up process is separated in each synthetic chamber.
Multiple layer synthesis furnace device is used for the synthetic of cadmium telluride, zinc telluridse and lead telluride.
The present invention has following advantage:
1, adopted many composite waves synthetic technology;
2, add the thermal source heating technique;
3, adopt the temperature of the inner thermal field of intelligent temperature control system control furnace chamber evenly to distribute, guaranteed the production capacity and the security of equipment;
4, product quality height, the purity height.
Description of drawings
Fig. 1 is the multiple layer synthesis furnace device structural representation
1. synthetic furnace, 2. heat-insulation layer, 3. heater strip, 4. thermal insulation board, 5. synthetic reaction pipe.
Fig. 2 is the A-A cutaway view
The specific embodiment
Below by embodiment the present invention is carried out concrete description; be necessary to be pointed out that at this present embodiment only is used for the present invention is further specified; can not be interpreted as limiting the scope of the invention, the person skilled in the art in this field can make some nonessential improvement and adjustment according to the content of the invention described above.
Embodiment
Multiple layer synthesis furnace device of the present invention has simple in structure, and is easily manufactured, as shown in Figure 1.Establish highiy refractory brick heat-insulation layer 2 in the synthetic furnace 1, carborunbum tube is as heating source, establish heater strip 3 in the heating source, thermal insulation board 4 and synthetic reaction pipe 5, be divided into a plurality of synthetic chambers with thermal insulation board 4 in the furnace chamber of synthetic furnace, each synthetic a plurality of synthetic reaction pipe 5 of indoor placement, the temperature of thermal field of strict control furnace chamber inside evenly distributes, temperature of thermal field gradient≤± 5 ℃/cm, the separation of each synthetic chamber has independently guaranteed the security of building-up process.

Claims (2)

1. multiple layer synthesis furnace device, it is characterized in that establishing heat-insulation layer (2), heater strip (3), thermal insulation board (4) and synthetic reaction pipe (5) in the synthetic furnace (1) of this device, be divided into a plurality of synthetic chambers with thermal insulation board in the furnace chamber of synthetic furnace, each synthetic a plurality of synthetic reaction pipe of indoor placement, temperature of thermal field gradient≤± 5 of control furnace chamber inside ℃/cm.
2. multiple layer synthesis furnace device is used for the synthetic of cadmium telluride, zinc telluridse and lead telluride according to claim 1.
CN200710049885A 2007-08-31 2007-08-31 Multiple layer synthesis furnace device Expired - Fee Related CN101118111B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200710049885A CN101118111B (en) 2007-08-31 2007-08-31 Multiple layer synthesis furnace device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200710049885A CN101118111B (en) 2007-08-31 2007-08-31 Multiple layer synthesis furnace device

Publications (2)

Publication Number Publication Date
CN101118111A true CN101118111A (en) 2008-02-06
CN101118111B CN101118111B (en) 2010-05-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200710049885A Expired - Fee Related CN101118111B (en) 2007-08-31 2007-08-31 Multiple layer synthesis furnace device

Country Status (1)

Country Link
CN (1) CN101118111B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103754838A (en) * 2014-02-08 2014-04-30 张家港绿能新材料科技有限公司 Method and equipment for quickly preparing cadmium telluride powder
CN103950904A (en) * 2014-05-12 2014-07-30 广东先导稀材股份有限公司 Preparation method of zinc telluride
CN110559959A (en) * 2019-09-23 2019-12-13 盐城工学院 Semi-continuous anti-blocking subcritical/supercritical reaction heating device
CN111437780A (en) * 2020-03-20 2020-07-24 安徽大学 Hydrothermal solvent heat parallel synthesis device
WO2021042872A1 (en) * 2019-09-02 2021-03-11 闵鑫沛 Garbage incinerator and waste heat recovery system for garbage incinerator

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3137085B2 (en) * 1998-07-17 2001-02-19 タイガー魔法瓶株式会社 Electric rice cooker
JP2002168570A (en) * 2000-11-29 2002-06-14 Kyocera Corp Hot air circulation burning furnace and method for producing ceramics using it
CN2570721Y (en) * 2002-09-29 2003-09-03 中国科学院上海技术物理研究所 Synthesis furnace with forecasting compound semiconductor synthesized cracking tube real-time monitoring apparatus
JP4362083B2 (en) * 2004-03-31 2009-11-11 日信工業株式会社 Brake hydraulic pressure control device for vehicles

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103754838A (en) * 2014-02-08 2014-04-30 张家港绿能新材料科技有限公司 Method and equipment for quickly preparing cadmium telluride powder
CN103754838B (en) * 2014-02-08 2015-10-28 张家港绿能新材料科技有限公司 A kind of method and apparatus preparing cadmium antimonide powder fast
CN103950904A (en) * 2014-05-12 2014-07-30 广东先导稀材股份有限公司 Preparation method of zinc telluride
WO2021042872A1 (en) * 2019-09-02 2021-03-11 闵鑫沛 Garbage incinerator and waste heat recovery system for garbage incinerator
CN110559959A (en) * 2019-09-23 2019-12-13 盐城工学院 Semi-continuous anti-blocking subcritical/supercritical reaction heating device
CN111437780A (en) * 2020-03-20 2020-07-24 安徽大学 Hydrothermal solvent heat parallel synthesis device

Also Published As

Publication number Publication date
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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: Sichuan Xinlong Tellurium Industry & Technique Development Co.,Ltd.

Assignor: Hou Renyi

Contract record no.: 2012510000055

Denomination of invention: Multiple layer synthesis furnace device

Granted publication date: 20100519

License type: Exclusive License

Open date: 20080206

Record date: 20120618

ASS Succession or assignment of patent right

Owner name: SICHUAN XINLONG TELLURIUM INDUSTRY + TECHNIQUE DEV

Free format text: FORMER OWNER: HOU RENYI

Effective date: 20120827

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 610065 CHENGDU, SICHUAN PROVINCE TO: 610207 CHENGDU, SICHUAN PROVINCE

TR01 Transfer of patent right

Effective date of registration: 20120827

Address after: 610207, No. three, No. 485, Tengfei Economic Development Zone, Shuangliu Southwest Airlines, Sichuan, Chengdu

Patentee after: Sichuan Xinlong Tellurium Industry & Technique Development Co.,Ltd.

Address before: 610065, 11 building, elephant building, No. 90, Vanward Road, Sichuan, Chengdu

Patentee before: Hou Renyi

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100519

Termination date: 20170831

CF01 Termination of patent right due to non-payment of annual fee