CN101118111A - Multiple layer synthesis furnace device - Google Patents
Multiple layer synthesis furnace device Download PDFInfo
- Publication number
- CN101118111A CN101118111A CNA2007100498854A CN200710049885A CN101118111A CN 101118111 A CN101118111 A CN 101118111A CN A2007100498854 A CNA2007100498854 A CN A2007100498854A CN 200710049885 A CN200710049885 A CN 200710049885A CN 101118111 A CN101118111 A CN 101118111A
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- CN
- China
- Prior art keywords
- synthetic
- furnace
- chamber
- multiple layer
- insulation board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 11
- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 11
- 238000009413 insulation Methods 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims abstract description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims abstract description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 239000011449 brick Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a multilayer compound synthetic furnace device, which is characterized in that an insulation layer (2), a heating wire (3), an insulation board (4) and a synthetic reaction tube (5) are arranged in a synthetic furnace (1), the furnace chamber of the synthetic furnace is divided into a plurality of synthetic chambers with the insulation board, and a plurality of synthetic reaction tubes (5) are put in each synthetic chamber, the thermal field temperature gradient of the furnace chamber is controlled in less or equal to plus or minus 5 DEG C, and each synthetic chamber being separated ensures the security during the synthetic process. The multilayer compound synthetic furnace device is applied to the synthesis of cadmium telluride, zinc telluride and lead telluride.
Description
Technical field
The present invention relates to a kind of multiple layer synthesis furnace device, belong to compounds forming apparatus field.
Background technology
Along with developing rapidly of world's new high-tech industry, world's new high-tech industry increases rapidly the demand of semiconducting compound, at present the conventional production methods of semiconducting compound and the shortcoming that there is the poor stability of production cost height, production in technology.Particularly be subjected to the little restriction of production equipment, can't realize semiconducting compound industrialization production, seriously hindered the development of new high-tech industry and microelectronics opto-electronics information material cause.
Summary of the invention
The objective of the invention is provides a kind of multiple layer synthesis furnace device at the deficiencies in the prior art, be characterized in adopting the heat-insulation layer of highiy refractory brick as synthetic furnace, carborunbum tube is as heating source, the temperature of thermal field of strict control furnace chamber inside evenly distributes, temperature of thermal field gradient≤± 5 ℃/cm.
Purpose of the present invention is realized by following technical measures:
Establish heat-insulation layer, heater strip, thermal insulation board and synthetic reaction pipe in the synthetic furnace of multiple layer synthesis furnace device, be divided into a plurality of synthetic chambers with thermal insulation board in the furnace chamber of synthetic furnace, each synthetic a plurality of synthetic reaction pipe of indoor placement, the temperature of thermal field of control furnace chamber inside evenly distributes, temperature of thermal field gradient≤± 5 ℃/cm, the security that has independently guaranteed building-up process is separated in each synthetic chamber.
Multiple layer synthesis furnace device is used for the synthetic of cadmium telluride, zinc telluridse and lead telluride.
The present invention has following advantage:
1, adopted many composite waves synthetic technology;
2, add the thermal source heating technique;
3, adopt the temperature of the inner thermal field of intelligent temperature control system control furnace chamber evenly to distribute, guaranteed the production capacity and the security of equipment;
4, product quality height, the purity height.
Description of drawings
Fig. 1 is the multiple layer synthesis furnace device structural representation
1. synthetic furnace, 2. heat-insulation layer, 3. heater strip, 4. thermal insulation board, 5. synthetic reaction pipe.
Fig. 2 is the A-A cutaway view
The specific embodiment
Below by embodiment the present invention is carried out concrete description; be necessary to be pointed out that at this present embodiment only is used for the present invention is further specified; can not be interpreted as limiting the scope of the invention, the person skilled in the art in this field can make some nonessential improvement and adjustment according to the content of the invention described above.
Embodiment
Multiple layer synthesis furnace device of the present invention has simple in structure, and is easily manufactured, as shown in Figure 1.Establish highiy refractory brick heat-insulation layer 2 in the synthetic furnace 1, carborunbum tube is as heating source, establish heater strip 3 in the heating source, thermal insulation board 4 and synthetic reaction pipe 5, be divided into a plurality of synthetic chambers with thermal insulation board 4 in the furnace chamber of synthetic furnace, each synthetic a plurality of synthetic reaction pipe 5 of indoor placement, the temperature of thermal field of strict control furnace chamber inside evenly distributes, temperature of thermal field gradient≤± 5 ℃/cm, the separation of each synthetic chamber has independently guaranteed the security of building-up process.
Claims (2)
1. multiple layer synthesis furnace device, it is characterized in that establishing heat-insulation layer (2), heater strip (3), thermal insulation board (4) and synthetic reaction pipe (5) in the synthetic furnace (1) of this device, be divided into a plurality of synthetic chambers with thermal insulation board in the furnace chamber of synthetic furnace, each synthetic a plurality of synthetic reaction pipe of indoor placement, temperature of thermal field gradient≤± 5 of control furnace chamber inside ℃/cm.
2. multiple layer synthesis furnace device is used for the synthetic of cadmium telluride, zinc telluridse and lead telluride according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710049885A CN101118111B (en) | 2007-08-31 | 2007-08-31 | Multiple layer synthesis furnace device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710049885A CN101118111B (en) | 2007-08-31 | 2007-08-31 | Multiple layer synthesis furnace device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101118111A true CN101118111A (en) | 2008-02-06 |
| CN101118111B CN101118111B (en) | 2010-05-19 |
Family
ID=39054321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710049885A Expired - Fee Related CN101118111B (en) | 2007-08-31 | 2007-08-31 | Multiple layer synthesis furnace device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101118111B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103754838A (en) * | 2014-02-08 | 2014-04-30 | 张家港绿能新材料科技有限公司 | Method and equipment for quickly preparing cadmium telluride powder |
| CN103950904A (en) * | 2014-05-12 | 2014-07-30 | 广东先导稀材股份有限公司 | Preparation method of zinc telluride |
| CN110559959A (en) * | 2019-09-23 | 2019-12-13 | 盐城工学院 | Semi-continuous anti-blocking subcritical/supercritical reaction heating device |
| CN111437780A (en) * | 2020-03-20 | 2020-07-24 | 安徽大学 | Hydrothermal solvent heat parallel synthesis device |
| WO2021042872A1 (en) * | 2019-09-02 | 2021-03-11 | 闵鑫沛 | Garbage incinerator and waste heat recovery system for garbage incinerator |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3137085B2 (en) * | 1998-07-17 | 2001-02-19 | タイガー魔法瓶株式会社 | Electric rice cooker |
| JP2002168570A (en) * | 2000-11-29 | 2002-06-14 | Kyocera Corp | Hot air circulation burning furnace and method for producing ceramics using it |
| CN2570721Y (en) * | 2002-09-29 | 2003-09-03 | 中国科学院上海技术物理研究所 | Synthesis furnace with forecasting compound semiconductor synthesized cracking tube real-time monitoring apparatus |
| JP4362083B2 (en) * | 2004-03-31 | 2009-11-11 | 日信工業株式会社 | Brake hydraulic pressure control device for vehicles |
-
2007
- 2007-08-31 CN CN200710049885A patent/CN101118111B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103754838A (en) * | 2014-02-08 | 2014-04-30 | 张家港绿能新材料科技有限公司 | Method and equipment for quickly preparing cadmium telluride powder |
| CN103754838B (en) * | 2014-02-08 | 2015-10-28 | 张家港绿能新材料科技有限公司 | A kind of method and apparatus preparing cadmium antimonide powder fast |
| CN103950904A (en) * | 2014-05-12 | 2014-07-30 | 广东先导稀材股份有限公司 | Preparation method of zinc telluride |
| WO2021042872A1 (en) * | 2019-09-02 | 2021-03-11 | 闵鑫沛 | Garbage incinerator and waste heat recovery system for garbage incinerator |
| CN110559959A (en) * | 2019-09-23 | 2019-12-13 | 盐城工学院 | Semi-continuous anti-blocking subcritical/supercritical reaction heating device |
| CN111437780A (en) * | 2020-03-20 | 2020-07-24 | 安徽大学 | Hydrothermal solvent heat parallel synthesis device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101118111B (en) | 2010-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Sichuan Xinlong Tellurium Industry & Technique Development Co.,Ltd. Assignor: Hou Renyi Contract record no.: 2012510000055 Denomination of invention: Multiple layer synthesis furnace device Granted publication date: 20100519 License type: Exclusive License Open date: 20080206 Record date: 20120618 |
|
| ASS | Succession or assignment of patent right |
Owner name: SICHUAN XINLONG TELLURIUM INDUSTRY + TECHNIQUE DEV Free format text: FORMER OWNER: HOU RENYI Effective date: 20120827 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 610065 CHENGDU, SICHUAN PROVINCE TO: 610207 CHENGDU, SICHUAN PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20120827 Address after: 610207, No. three, No. 485, Tengfei Economic Development Zone, Shuangliu Southwest Airlines, Sichuan, Chengdu Patentee after: Sichuan Xinlong Tellurium Industry & Technique Development Co.,Ltd. Address before: 610065, 11 building, elephant building, No. 90, Vanward Road, Sichuan, Chengdu Patentee before: Hou Renyi |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100519 Termination date: 20170831 |
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| CF01 | Termination of patent right due to non-payment of annual fee |