CN101114675A - Multi-channel thin-film transistor structure - Google Patents
Multi-channel thin-film transistor structure Download PDFInfo
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- CN101114675A CN101114675A CNA2006101035836A CN200610103583A CN101114675A CN 101114675 A CN101114675 A CN 101114675A CN A2006101035836 A CNA2006101035836 A CN A2006101035836A CN 200610103583 A CN200610103583 A CN 200610103583A CN 101114675 A CN101114675 A CN 101114675A
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Abstract
A thin film transistor comprises a first conducting layer, an insulating layer, a semiconductor layer and a second conducting layer. The invention is characterized in that the first conducting layer and the second conducting layer are relatively provided with a gate structure and a source electrode structure or a Si structure, the first conducting layer which is arranged on a substrate is provided with a gate structure, an insulating layer is covered on the first conducting layer, the semiconductor layer which is arranged on the insulating layer above the gate structure is provided with a plurality of island-shaped semiconductor structures, the second conducting layer which is arranged on the insulating layer and the semiconductor layer is provided with the source electrode and the Si structure, one end of the island-shaped semiconductor structures is coupled with electric property of the source electrode structure while the other end of the island-shaped semiconductor structures is coupled with electric property of the Si structure.
Description
Technical field
The present invention relates to a kind of thin-film transistor structure, particularly a kind of multi-channel thin-film transistor structure.
Background technology
Display technology can be divided into passive type (Passive) and active (Active) two kinds of type of drive according to type of drive at present.In active matrix display device, generally use the switch module of thin-film transistor as each pixel.When the gate of this thin-film transistor must continue to be given positive voltage, or the gate of thin-film transistor input positive voltage has higher load cycle (duty circle), often cause the critical voltage (Vth) of this thin-film transistor to produce skew (shift), and cause the quality of drive current reduction and display to descend.
Organic Light Emitting Diode (Organic Light Emitting Diode for example; OLED) and polymer LED (Ploymer Light Emitting Diode, PLED) image element structure of display usually needs one to switch a thin-film transistor (Switching TFT) and a drive thin film transistors (Driving TFT).Wherein, the function of switching thin-film transistor is to enter the switch of storage capacitors and the usefulness of addressing as image data, and the function of drive thin film transistors then is to drive the Organic Light Emitting Diode assembly.Because the gate of drive thin film transistors often continues to be given positive voltage, the therefore easy phenomenon that interface (interface) deterioration between channel layer and the insulating barrier takes place and cause critical voltage to increase.Because of Organic Light Emitting Diode is a kind of current drives assembly, its luminous intensity is to be decided by the electric current by the Organic Light Emitting Diode assembly.When the critical voltage increase of drive thin film transistors, will cause electric current to descend by the Organic Light Emitting Diode assembly, the brightness of Organic Light Emitting Diode assembly is reduced, and then influence the display quality of organic light emitting diode display.
The critical voltage shift phenomenon of above-mentioned thin-film transistor often causes for the display quality of display and has a strong impact on.Therefore, how providing a kind of thin-film transistor structure to be offset with the critical voltage of avoiding thin-film transistor, is the problem that presses for solution at present.
Summary of the invention
Purpose of the present invention is to provide a kind of multi-channel thin-film transistor structure exactly, improves existing thin-film transistor when gate continues to be given positive voltage, the phenomenon that critical voltage increases.
According to above-described purpose, a kind of multi-channel thin-film transistor is proposed, include one first conductive layer, an insulating barrier, semi-conductor layer and one second conductive layer.Wherein first conductive layer is arranged on the substrate, and this first conductive layer has a gate structure.Insulating barrier is covered on first conductive layer.Semiconductor layer is arranged on the insulating barrier of gate structure top, and this semiconductor layer has several island semiconductor structures.Second conductive layer is arranged on insulating barrier and the semiconductor layer, and this second conductive layer has an one source pole structure and a drain structure.One end of island semiconductor structure and source configuration electrical couplings, the other end and drain structure electrical couplings.
According to above-described purpose, a kind of multi-channel thin-film transistor is also proposed, include a photoresist layer, one first conductive layer, semi-conductor layer, an insulating barrier and one second conductive layer.Wherein photoresist layer is arranged on the substrate.First conductive layer is arranged on photoresist layer and the substrate, and first conductive layer has an one source pole structure and a drain structure.Semiconductor layer is arranged on the photoresist layer and first conductive layer, and semiconductor layer has several island semiconductor structures, an end of each island semiconductor structure and source configuration electrical couplings, the other end and drain structure electrical couplings.Insulating barrier is covered on the semiconductor layer and first conductive layer.Second conductive layer is arranged on the insulating barrier, and conductive layer has a gate structure, and gate structure is positioned at the island semiconductor superstructure.
According to the described multi-channel thin-film transistor structure of a preferred embodiment of the present invention, wherein source configuration and one of them person of drain structure have a U font structure, another person has a protuberance, protuberance is arranged in the U font structure, this kind multi-channel thin-film transistor structure can be provided with double island semiconductor structure, the electric current that makes each island semiconductor structure of flowing through is further improved its critical voltage shift phenomenon by mean allocation.
Multi-channel thin-film transistor structure of the present invention has several island semiconductor structures, these a little island semiconductor structures form several channels parallel with one another, because these a little island semiconductor structures have less channel breadth length ratio, therefore work as multi-channel thin-film transistor and maintain the mode of operation that gives the gate positive voltage for a long time, compared to prior art, its critical voltage side-play amount is less.
Multi-channel thin-film transistor structure of the present invention can be applied to the thin-film transistor of end gate and top gate pattern, and the material of its island semiconductor structure can be amorphous silicon.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the end gate pattern thin-film transistor structure schematic diagram of a preferred embodiment of the present invention;
Fig. 2 is the A-A ' profile of Fig. 1;
Fig. 3 is the top gate pattern thin-film transistor structure schematic diagram of a preferred embodiment of the present invention;
Fig. 4 is the B-B ' profile of Fig. 3;
Fig. 5 is the thin-film transistor structure schematic diagram of another preferred embodiment of the present invention;
Fig. 6 is the thin-film transistor structure schematic diagram of another preferred embodiment of the present invention.
Wherein, Reference numeral
100,200,300,400: thin-film transistor
110: substrate
120,220: the first conductive layers
122,252,330: gate structure
130: insulating barrier
140,230: semiconductor layer
142,232: the island semiconductor structure
145,245: ohmic contact layer
150,250: the second conductive layers
152,222,310: source configuration
154,224,320: the drain structure
210: photoresist layer
212: light resistance structure
240: the first insulating barriers
260: the second insulating barriers
300: thin-film transistor
312: an end of source configuration
314: the other end of source configuration
322: protuberance
340,340a, 340b: island semiconductor structure
401: syndeton
Embodiment
Fig. 1 is the end gate pattern thin-film transistor structure schematic diagram of a preferred embodiment of the present invention, and Fig. 2 is the A-A ' profile of Fig. 1.With reference to Fig. 1 and Fig. 2, thin-film transistor 100 for example is the drive thin film transistors of organic light emitting diode display or polymer led display.This thin-film transistor 100 includes one first conductive layer 120, an insulating barrier 130, semi-conductor layer 140 and one second conductive layer 150.Wherein first conductive layer 120 is arranged on the substrate 110, and this first conductive layer 120 has a gate structure 122.Insulating barrier 130 is covered on first conductive layer 120.Semiconductor layer 140 is arranged on the insulating barrier 130 of gate structure 122 tops, and this semiconductor layer 140 has several island semiconductor structures 142.Second conductive layer 150 is arranged on insulating barrier 130 and the semiconductor layer 140, and this second conductive layer 150 has an one source pole structure 152 and a drain structure 154.Have an ohmic contact layer 145 between the semiconductor layer 140 and second conductive layer 150, this ohmic contact layer 145 for example is a n type doped layer.One end of island semiconductor structure 142 and source configuration 152 electrical couplings, the other end and drain structure 154 electrical couplings.
In the thin-film transistor 100, the material of substrate 110 for example is a glass, and the material of first conductive layer 120 for example is chromium, tungsten, tantalum, titanium, molybdenum, aluminium, copper, aluminium alloy or its combination in any.The material of insulating barrier 130 for example is a silicon nitride, and the material of semiconductor layer 140 for example is an amorphous silicon, and the material of second conductive layer 150 for example is chromium, tungsten, tantalum, titanium, molybdenum or its combination in any.Gate structure 122, island semiconductor structure 142, source configuration 152 and drain structure 154 can utilize several photolithographic fabrication process to form.
The channel architecture of several island semiconductor structure 142 formation thin-film transistors 100 parallel with one another, each island semiconductor structure 142 has a channel width and a channel length, for example the channel width of island semiconductor structure 142 is W, and channel length is L, and the channel breadth length ratio is W/L.Generally speaking, under the channel length situation identical with the channel width summation, utilize many more island semiconductor structures 142 parallel with one another, the electric current that makes each island semiconductor structure 142 of flowing through then can be avoided island semiconductor structure 142 to produce the phenomenon of deterioration by mean allocation more.In other words, the channel width of island semiconductor structure 142 is more little, and the critical voltage shift phenomenon of thin-film transistor 100 can obtain better improvement.Yet channel width is crossed the young pathbreaker makes island semiconductor structure 142 be difficult for making.In this preferred embodiment, thin-film transistor 100 has 5 island semiconductor structures 142, and these a little island semiconductor structures 142 have identical channel breadth length ratio, for example are about 7/4.The channel width summation of these a little island semiconductor structures 142 and the ratio of channel length are about 35/4.It should be noted that these a little island semiconductor structures 142 can also have different channel breadth length ratios, for example these a little island semiconductor structures 142 can have identical channel length L and different channel width W.
Fig. 3 is the top gate pattern thin-film transistor structure schematic diagram of a preferred embodiment of the present invention, and Fig. 4 is the B-B ' profile of Fig. 3.With reference to Fig. 3 and Fig. 4, this thin-film transistor 200 includes a photoresist layer 210, one first conductive layer 220, semi-conductor layer 230, one first insulating barrier 240 and one second conductive layer 250.Wherein photoresist layer 210 is arranged on the substrate 110, and photoresist layer 210 has a light resistance structure 212.First conductive layer 220 is arranged on photoresist layer 210 and the substrate 110, and first conductive layer 220 has an one source pole structure 222 and a drain structure 224.Semiconductor layer 230 is arranged on the photoresist layer 210 and first conductive layer 220, and semiconductor layer 230 has several island semiconductor structures 232, an end of each island semiconductor structure 232 and source configuration 222 electrical couplings, the other end and drain structure 224 electrical couplings.First insulating barrier 240 is covered on the semiconductor layer 230 and first conductive layer 220.Second conductive layer 250 is arranged on first insulating barrier 240, and second conductive layer 250 has a gate structure 252, and gate structure 252 is positioned at island semiconductor structure 232 tops.Thin-film transistor 200 for example also has an ohmic contact layer 245 and one second insulating barrier 260, and this ohmic contact layer 245 is arranged between first conductive layer 220 and the semiconductor layer 230.Second insulating barrier 260 is covered on second conductive layer 250 and first insulating barrier 240.
In thin-film transistor 200 structures, the material of substrate 110 for example is a glass, and the material of first conductive layer 220 for example is chromium, tungsten, tantalum, titanium, molybdenum, aluminium, copper, aluminium alloy or its combination in any, and the material of semiconductor layer 230 is amorphous silicons.The material of first insulating barrier 240 and second insulating barrier 260 for example is a silicon nitride.The material of second conductive layer 250 for example is chromium, tungsten, tantalum, titanium, molybdenum or its combination in any.Ohmic contact layer 245 for example is a n type doped layer.The material of light resistance structure 212 for example is resin (resin), chromium, tungsten, tantalum, titanium, molybdenum or its combination in any.
Fig. 5 is the thin-film transistor structure schematic diagram of another preferred embodiment of the present invention.This preferred embodiment can form the end gate pattern thin-film transistor structure as Fig. 2, can also form the top gate pattern thin-film transistor structure as Fig. 4.Different with above-mentioned preferred embodiment is that in the thin-film transistor of this preferred embodiment, source configuration and drain structure have special external form.With reference to Fig. 5, be example with the thin-film transistor 300 of end gate pattern, thin-film transistor 300 has a gate structure 330, several island semiconductor structures 340, one source pole structure 310 and a drain structure 320.Wherein source configuration 310 has a U font structure and drain structure 320 has a protuberance 322, and this protuberance 322 is arranged in the U font structure.Island semiconductor structure 340 for example is to be arranged between protuberance 322 and the U font structure in two groups of modes side by side.More specifically, an end 312 electrical couplings of first group of island semiconductor structure 340a and protuberance 322 and source configuration 310, the other end 314 electrical couplings of second group of island semiconductor structure 340b and protuberance 322 and source configuration 310.Because the thin-film transistor 300 of this preferred embodiment can be provided with double island semiconductor structure 340, therefore more island semiconductor structure 340 can be set in same thin-film transistor structure, the electric current that makes each island semiconductor structure 340 of flowing through is further improved the critical voltage shift phenomenon of thin-film transistor 300 by mean allocation.
Fig. 6 is the thin-film transistor structure schematic diagram of another preferred embodiment of the present invention.This preferred embodiment can form the end gate pattern thin-film transistor structure as Fig. 2, can also form the top gate pattern thin-film transistor structure as Fig. 4.Thin-film transistor 400 with top gate pattern is an example, and thin-film transistor 400 has a gate structure 252, several island semiconductor structures 232, one source pole structure 222 and a drain structure 224.The semiconductor layer of thin-film transistor 400 also has a syndeton 401 except including several island semiconductor structures 232, makes at least two island semiconductor structure 232 electrical couplings, and the width d of this syndeton is less than the width D of island semiconductor structure 232.The structure of thin-film transistor 400 can make the electric current of each island semiconductor structure 232 of flowing through by mean allocation equally, improves the critical voltage shift phenomenon of thin-film transistor 400.
What deserves to be mentioned is, thin-film transistor structure of the present invention is except being applied in the drive thin film transistors of organic light emitting diode display and polymer led display, can also be applied in any gate and often continue to be given the thin-film transistor of positive voltage, or the thin-film transistor of gate pole input positive voltage with higher load cycle.For example the drive circuit of directly making with amorphous silicon film transistor on glass substrate can adopt thin-film transistor structure of the present invention to improve the critical voltage shift phenomenon of thin-film transistor.
By the invention described above preferred embodiment as can be known, the present invention has the following advantages:
1. multi-channel thin-film transistor structure of the present invention has several island semiconductor structures, these a little island semiconductor structures form several channels parallel with one another, when this multi-channel thin-film transistor maintains the mode of operation that gives the gate positive voltage for a long time, can improve the situation that critical voltage increases.
2. multi-channel thin-film transistor structure of the present invention can be provided with double semiconductor island semiconductor structure, and the electric current that makes each semiconductor island semiconductor structure of flowing through is further improved the critical voltage shift phenomenon of thin-film transistor by mean allocation.
3. multi-channel thin-film transistor structure of the present invention can be applied to the thin-film transistor of end gate and top gate pattern, and the material of island semiconductor structure can adopt amorphous silicon.Therefore have widely and use.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (10)
1. a multi-channel thin-film transistor structure is characterized in that, comprises:
One first conductive layer is arranged on the substrate, and this first conductive layer has a gate structure;
One insulating barrier is covered on this first conductive layer;
Semi-conductor layer is arranged on this insulating barrier of this gate structure top, and this semiconductor layer has several island semiconductor structures; And
One second conductive layer is arranged on this insulating barrier and this semiconductor layer, and this second conductive layer has an one source pole structure and a drain structure;
Wherein an end of each those island semiconductor structure and this source configuration electrical couplings, the other end and this drain structure electrical couplings.
2. multi-channel thin-film transistor structure according to claim 1 is characterized in that, the material of this semiconductor layer is an amorphous silicon.
3. multi-channel thin-film transistor structure according to claim 1 is characterized in that, each island semiconductor structure has a channel width W and a channel length L, and the channel width W of those island semiconductor structures is not identical entirely.
4. multi-channel thin-film transistor structure according to claim 1 is characterized in that this semiconductor layer has a syndeton, those island semiconductor structures of electrical couplings.
5. multi-channel thin-film transistor structure according to claim 1, it is characterized in that, this source configuration and one of them person of this drain structure have a U font structure, another person has a protuberance, this protuberance is arranged in this U font structure, and those island semiconductor structures are arranged between this protuberance and this U font structure in two groups of modes side by side.
6. a multi-channel thin-film transistor structure is characterized in that, comprises:
One photoresist layer is arranged on the substrate;
One first conductive layer is arranged on this photoresist layer and this substrate, and this first conductive layer has an one source pole structure and a drain structure;
Semi-conductor layer is arranged on this photoresist layer and this first conductive layer, and this semiconductor layer has several island semiconductor structures, an end of those island semiconductor structures and this source configuration electrical couplings, the other end and this drain structure electrical couplings;
One insulating barrier is covered on this semiconductor layer and this first conductive layer; And
One second conductive layer is arranged on this insulating barrier, and this second conductive layer has a gate structure, and this gate structure is positioned at those island semiconductor superstructures.
7. multi-channel thin-film transistor structure according to claim 6 is characterized in that, the material of this semiconductor layer is an amorphous silicon.
8. multi-channel thin-film transistor structure according to claim 6 is characterized in that, those island semiconductor structures have a channel width W and a channel length L, and the channel width W of those island semiconductor structures is not identical entirely.
9. multi-channel thin-film transistor structure according to claim 6 is characterized in that this semiconductor layer has a syndeton, those island semiconductor structures of electrical couplings.
10. multi-channel thin-film transistor structure according to claim 6, it is characterized in that, this source configuration and one of them person of this drain structure have a U font structure, another person has a protuberance, this protuberance is arranged in this U font structure, and those island semiconductor structures are arranged between this protuberance and this U font structure in two groups of modes side by side.
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| CN200610103583A CN101114675B (en) | 2006-07-25 | 2006-07-25 | Multi-channel thin-film transistor structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783886A (en) * | 2017-01-03 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), array base palte and display device |
| CN107104138A (en) * | 2016-02-19 | 2017-08-29 | 硅显示技术有限公司 | Oxide semi conductor transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20030086168A (en) * | 2002-05-03 | 2003-11-07 | 엘지.필립스 엘시디 주식회사 | The organic electro-luminescence device and method for fabricating of the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104138A (en) * | 2016-02-19 | 2017-08-29 | 硅显示技术有限公司 | Oxide semi conductor transistor |
| CN107104138B (en) * | 2016-02-19 | 2021-04-27 | 硅显示技术有限公司 | Oxide semiconductor transistor |
| CN106783886A (en) * | 2017-01-03 | 2017-05-31 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), array base palte and display device |
| CN106783886B (en) * | 2017-01-03 | 2020-11-10 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and display device |
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