CN1832194A - Organic electroluminescence display unit - Google Patents
Organic electroluminescence display unit Download PDFInfo
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- CN1832194A CN1832194A CN200610051487.1A CN200610051487A CN1832194A CN 1832194 A CN1832194 A CN 1832194A CN 200610051487 A CN200610051487 A CN 200610051487A CN 1832194 A CN1832194 A CN 1832194A
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Abstract
This invention provides an organic electroluminescent display unit including a base plate, a first non-crystalline silicon layer, a grating metal, a second non-crystalline silicon layer, a first passive layer and an organic electroluminescent diode, in which, the first non-crystalline silicon layer is set on the base plate including a first channel region, a first source/drain region and a second source/drain region, the grating metal is set above the first channel region, the second non-crystalline silicon layer includes a second channel region, a third source/drain and a fourth source/drain region, in which, the second channel is set above the grating metal, the first passive layer covers the first non-crystalline silicon layer, the grating metal and the second non-crystalline silicon layer on the base board, the diode is set on the passive layer and connected with the first and third source/drain metals electrically.
Description
Technical field
The present invention is about a kind of display of organic electroluminescence, particularly about a kind of active organic electroluminescent display.
Background technology
Display of organic electroluminescence is studied ardently and is discussed in Display Technique recently, it can be in order to make the display of slimming, and the display compared to another kind of slimming---LCD, organic electroluminescent LED is a kind of self luminous assembly, LCD then needs backlight, so display of organic electroluminescence is not only than LCD reduced volume further, and reaches preferable optical effect easily, for example, the full color rendition degree that closes.
Organic electroluminescent LED is generally the multi-layer film structure that organic material constitutes, and its typical situation generally includes hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.Its principle of luminosity is substantially electronics is combined at luminescent layer with the hole, and the electric energy that produces is excited to one than high energy rank attitude with the organic material of luminescent layer, this than high energy rank attitude under more unsettled relatively situation, meeting is released energy, the cold light that can reach electroluminescence or be commonly called as by this in the mode that discharges photon.
When utilizing organic electroluminescent LED to make display of organic electroluminescence, except forming the required relevant multilayer film coating technique of organic electroluminescent LED, the necessary circuitry of display (for example, holding wire and scan line) configuring technical, and relevant demonstration and Driving technique, also most important, these a little technology all can influence the general performance of a display product, at present, " active organic electroluminescent display " is a kind of display product that meets the demand.
Please refer to Fig. 1, it is the equivalent circuit diagram of unit picture element in the known active organic electroluminescent display.Unit picture element 70 comprises organic electroluminescent LED 80, the first film transistor 73, electric capacity 74 and second thin-film transistor 75.Because organic electroluminescent LED 80 is a kind of assembly of current drives, therefore, as shown in the figure, produce pressure reduction by first power supply 71 (being generally high voltage) and second source 81 (being generally low-voltage), and provide electric current to give organic electroluminescent LED 80 by the first film transistor 73.
As for providing to the size of the electric current of organic electroluminescent LED 80, then can utilize holding wire 77, and by external control its, the brightness of may command organic electroluminescent LED 80 by this.Holding wire 77, scan line 76 and second thin-film transistor, 75 these threes' combination is common in the unit picture element of various displays, holding wire 77 transmission tendencies to develop are to the signal of telecommunication of unit picture element 70, and scan line 76 is electrically connected on the grid of second thin-film transistor 75, enters unit picture element 70 to allow the signal of telecommunication that holding wire 77 is transmitted when the suitable sequential.
74 of electric capacity import above-said current signal in the unit picture element 70 in order to storage, so that organic electroluminescent LED 80 all can show the pairing brightness of above-said current signal in a frame time (a frame time).
Discuss the current drives characteristic of organic electroluminescent LED 80, be familiar with this case various equivalent modifications when knowing, if (α-Si) technology is made the first transistor 73 with amorphous silicon, since the electronics of amorphous silicon move usefulness (mobility) comparatively speaking a little less than, for example its electronics moves the one thousandth that usefulness may only have low temperature polycrystalline silicon, so therefore the performance of the usefulness of organic electroluminescent LED 80 also is affected.If desire to enlarge the mode (the particularly size in semiconductor channel zone wherein) of the first transistor 73 sizes, or to set up extra transistor (certainly, this extra transistor is side by side in the first transistor 73) mode increase the magnitude of current that offers organic electroluminescent LED 80, then again because these a little practices can make the aperture opening ratio of unit picture element 70 descend, be an impediment to the demonstration performance of display, and the difficulty on the actual embodiment is arranged.
Therefore, how in the face of above-mentioned a difficult problem and technical bottleneck about art technology, and utilizing amorphous silicon technology to make under the prerequisite of thin-film transistor, the display of organic electroluminescence of breaking through a present difficult problem is provided, this is the main inking direction of the present invention.
Summary of the invention
Because shortcoming that above-mentioned known technology still had, one object of the present invention is in that (α-Si) technology is made under the transistorized prerequisite, and a kind of technology that promotes the magnitude of current of the organic electroluminescent LED of supplying with is provided with amorphous silicon.
Organic electroluminescent provided by the present invention shows first unit and comprises substrate, first amorphous silicon layer, gate metal, second amorphous silicon layer, first passivation layer and organic electroluminescent LED.First amorphous silicon layer is arranged on the substrate, and comprises the first middle channel region, the first source/drain region and the second source/drain region at two ends.Gate metal is arranged at the top of first channel region.Second channel region in the middle of second amorphous silicon layer comprises, the 3rd source/drain region and the 4th source/drain region at two ends, wherein second channel region is positioned at the top of gate metal.The 3rd source/drain metal and the 4th source/drain metal is electrically connected with first source/drain metal and second source/drain metal respectively.First passivation layer is covered in first amorphous silicon layer, gate metal and second amorphous silicon layer on the substrate, and organic electroluminescent LED is arranged on first passivation layer, and is electrically connected on this first source/drain metal.Wherein, this first, second, third and the 4th source/drain metal, have partly overlapping with this gate metal respectively.
In one embodiment, the 3rd source/drain metal, the 4th source/drain metal are arranged at the 3rd source/drain region of second amorphous silicon layer and the top of the 4th source/drain region respectively.In another embodiment, wherein the 3rd source/drain metal, the 4th source/drain metal are arranged at the 3rd source/drain region of second amorphous silicon layer and the below of the 4th source/drain region respectively.
About the advantages and spirit of the present invention, and more detailed execution mode can be further understood by following execution mode and accompanying drawing.
Description of drawings
By following detailed description in conjunction with the accompanying drawings, can understand the plurality of advantages of foregoing and the present invention easily, wherein:
Fig. 1 is the equivalent circuit diagram of unit picture element in the known active organic electroluminescent display.
Fig. 2 is the equivalent circuit diagram of unit picture element in the active organic electro-luminescent display provided by the present invention.
Fig. 3 is for looking schematic diagram on the organic electroluminescence display unit of the present invention.
Fig. 4 prolongs the side generalized section of 4-4 hatching for Fig. 3.
Fig. 5 is the side generalized section of another embodiment of the present invention.
[primary clustering symbol description]
Organic electroluminescence display unit 10 substrates 12
Glass substrate 121 insulating film layers 123
First amorphous silicon layer, 14 first channel regions 141
First source/143 second sources, drain region/drain region 145
The first metal layer 161 second metal levels 162
The 3rd metal level 163 the 4th metal level 164
First source/drain metal 1,613 second sources/drain metal 1615
The 3rd source/drain metal 1623 the 4th source/drain metal 1625
First grid insulating barrier 18 gate metals 19
Second amorphous silicon layer, 24 second channel regions 241
The 3rd source/the 4th source, drain region 243/drain region 245
Second grid insulating barrier 28 first passivation layers 30
Second passivation layer, 33 tabular surfaces 331
Organic electroluminescent LED 34,80 unit picture elements 70,170
First power supply, 71,171 the first film transistors 73,173
Electric capacity 74,174 second thin-film transistors 75,175
Scan line 76,176 holding wires 77,177
Second source 81,181
Embodiment
Please refer to Fig. 2, it is the equivalent circuit diagram of unit picture element 170 in the active organic electroluminescent display provided by the present invention.Unit picture element 170 comprises organic electroluminescence display unit 10, electric capacity 174 and second thin-film transistor 175.Organic electroluminescence display unit 10 comprises organic electroluminescent LED 34 and the first film transistor 173.What deserves to be mentioned is, the first film transistor 173 provided by the present invention is a kind of thin-film transistor with double channel (double channel), compared to traditional thin-film transistor (certainly, refer under the identical prerequisite of other process conditions), the of the present invention first thin transistor 173 can provide the double magnitude of current substantially, therefore on equivalent circuit diagram, represent this characteristic with two transistor symbols of parallel connection.
During operation, can produce pressure reduction between first power supply 171 (high voltage) and the second source 181 (low-voltage), the first film transistor 173 then can provide current to organic electroluminescent LED 34.
Being provided to the size of the electric current of organic electroluminescent LED 34, then is to utilize holding wire 177, and by external control its, the brightness of may command organic electroluminescent LED 34 by this.Holding wire 177, scan line 176 and second thin-film transistor, 175 these threes' combination is common in the unit picture element of various displays, holding wire 177 transmission tendencies to develop are to the signal of telecommunication of unit picture element 170, and scan line 176 is electrically connected on the grid of second film crystal 175, enters unit picture element 170 to allow the signal of telecommunication that holding wire 177 is transmitted when the suitable sequential.
174 of electric capacity import above-said current signal in the unit picture element 170 in order to storage, so that organic electroluminescent LED 34 all can show the pairing brightness of above-said current signal in a frame time (a frame time).
Please refer to Fig. 3, Fig. 3 is for looking schematic diagram on the organic electroluminescence display unit of the present invention.Owing to the invention provides the have double channel the first film transistor 173 of (double channel), and what deserves to be mentioned is, this double channel is provided with in the mode that stacks up and down, therefore, top view by Fig. 3 is seen it, though the first film electricity brilliant 173 provided by the present invention can have the usefulness (magnitude of current that promptly has the conventional thin film transistor of doubling) of two conventional thin film transistor, yet, then be as good as by the viewed area of top view, can't influence the aperture opening ratio of unit picture element 170 with conventional thin film transistor.Aperture opening ratio herein refers to refer to substantially in the scope that two signal line 177 shown in Figure 3 and two scan lines 176 surrounded, the area ratio that the 4th metal level 164 is shared.The 4th metal level 164 light-permeables for example can be selected the material of indium tin oxide (ITO) or indium-zinc oxide (IZO) and so on for use.
Further specify the above-mentioned double channel that stacks up and down, please refer to Fig. 4, Fig. 4 prolongs the side generalized section of 4-4 hatching for Fig. 3.By the side profile view it, substrate 12 main bodys be glass substrate 121 with and a lip-deep insulating film layer 123.The material of insulating film layer 123 can be oxide (oxide) or nitride (nitride), and its mode with deposition is formed at glass substrate 12 surfaces.
First amorphous silicon layer 14 is arranged on the substrate 12, first channel region 141 in the middle of it comprises, the first source/drain region 143 and the second source/drain region 145 at two ends.And first grid insulating barrier 18 is arranged between first amorphous silicon layer 14 and the gate metal 19.19 of gate metals are isolated by gate insulator 18, and be arranged at first channel region 141 directly over.Significantly, gate metal 19, first grid insulating barrier 18 and first amorphous silicon layer, 14 these threes have formed typical metal-oxide semiconductor (MOS) structure, and are the metal oxide semiconductor structure of top grid pattern (top-gate).Thus, constituted the Lower Half with the first film transistor 173 of double channel of the present invention.
Please continue with reference to Fig. 4, second amorphous silicon layer 24 is arranged at gate metal 19 tops, and second grid insulating barrier 28 is arranged between the gate metal 19 and second amorphous silicon layer 24, with the isolated gate metal 19 and second amorphous silicon layer 24.By this, formed the first half with the first film transistor 173 of double channel of the present invention.Gate metal 19, second grid insulating barrier 28 and second amorphous silicon layer, 24 these threes have formed typical metal-oxide semiconductor (MOS) structure, and are the metal oxide semiconductor structure of bottom-gate pattern (bottom-gate).Wherein, second channel region 241 of second amorphous silicon layer 24 in the middle of comprising, the 3rd source/drain region 243 and the 4th source/drain region 245 at two ends, wherein second channel region 241 be positioned at gate metal 19 directly over.
The present invention is by above reaching below the gate metal 19, be provided with first amorphous silicon layer 14 and second amorphous silicon layer 24 respectively, formed a first film transistor 173 with double channel, by this can be in order to provide double electric current to organic electroluminescent LED 34.On the first film transistor 173, then there is first passivation layer 30 that the first above-mentioned amorphous silicon layer 14, gate metal 19 and second amorphous silicon layer 24 are covered on the substrate 12, in order to the protection assembly.34 of organic electroluminescent LEDs (organicelectroluminescent multilayer structure) are arranged on first passivation layer 30, perhaps, consider first passivation layer, 30 surface irregularity problems, and second passivation layer 33 can be set between the organic electroluminescent LED 34 and first passivation layer 30, to reach the effect of planarization, as shown in the figure, second passivation layer 33 provides a tabular surface 331, makes organic electroluminescent LED 34 be formed at the surface of tabular surface 331.First passivation layer 30 and second bluntly 33 can be selected same material for use layer by layer, also can select different materials for use, and the material of the two is substantially the material that can insulate and all can.
In the present embodiment, as shown in Figure 4, the first film transistor 173 has also comprised the first metal layer 161 and second metal level 162.The first metal layer 161 comprises first source/drain metal 1613 and second source/drain metal 1615.First source/drain metal 1613, second source/drain metal 1615 are contacted with the first source/drain region 143 and the second source/drain region of first amorphous silicon layer 14 respectively.First source/drain metal 1613 is arranged on first source/drain region 143.Second source/drain metal 1615 is arranged on second source/drain region 145.And, first source/the drain metal 1613 and second source/drain metal 1615 all has partly overlapping with gate metal 19, in other words, first source at least partly/drain metal 1613 and second source/drain metal 1615 at least partly are positioned at the scope under the gate metal 19.Architectural feature described herein is extremely important, organic electroluminescent provided by the present invention shows among first unit 10, with first amorphous silicon layer 14 and second amorphous silicon layer 24 double channel as the first film transistor 173, (α-Si) material behavior considers based on amorphous silicon, with first amorphous silicon layer 14 is example, when first source/drain metal 1613 and second source/drain metal 1615 all have when partly overlapping with gate metal 19, can help the lifting of the conductivity of first crystallizing silicon layer 14.
In like manner, second metal level 162 has comprised the 3rd source/drain metal 1623, the 4th source/drain metal 1625, is contacted with the 3rd source/drain region 243 and the 4th source/drain region 245 of second amorphous silicon layer 24 respectively.In Fig. 4 embodiment, be arranged at second amorphous silicon layer, 24 lower surfaces second metal level, 162 contacts.Wherein the 3rd source/drain metal 1623, the 4th source/drain metal 1625 are arranged at the 3rd source/drain region 243 of second amorphous silicon layer 24 and the below of the 4th source/drain region 245 respectively.And, the 3rd and the 4th source/drain metal 1623,1625 have partly overlapping with gate metal 19 respectively, in other words, the 3rd source at least partly/drain metal 1623 and the 4th source/drain metal 1625 at least partly are positioned at the scope directly over the gate metal 19.Thus, can help the lifting of the conductivity of second crystallizing silicon layer 24.
(can with reference to the equivalent circuit diagram of figure 2 or the top view of Fig. 3) the first film transistor 173 is in order to provide current to organic electroluminescent LED 34 as previously mentioned.Please referring again to Fig. 4, about being electrically connected of the first film transistor 173 and organic electroluminescent LED 34, by at least one through hole of offering in first passivation layer 30 (through hole), to carry out the demand that is electrically connected, it comprises the 3rd metal level 163 and the 4th metal level 164.The 3rd metal level 163 is filled above-mentioned through hole, and is contacted with the 3rd source/drain metal 1623; The 4th metal level 164 is layed on first passivation layer 30, also can be with reference to Fig. 3, and it is contacted with organic electroluminescent LED 34.
Please refer to Fig. 5, Fig. 5 is another embodiment of the present invention side generalized section.Compared to the embodiment of Fig. 4, main discrepancy wherein is the position that is provided with of second metal level 162.In the present embodiment, be arranged at second amorphous silicon layer, 24 upper surfaces second metal level, 162 contacts, and second metal level, 162 contacts of the embodiment of Fig. 4 be arranged at second amorphous silicon layer, 24 lower surfaces.
Among Fig. 5 embodiment, second metal level 162 also comprises the 3rd source/drain metal 1623 and the 4th source/drain metal 1625.The 3rd source/drain metal 1623, the 4th source/drain metal 1625 are arranged at the 3rd source/drain region 243 of second amorphous silicon layer 24 and the top of the 4th source/drain region 245 respectively.
And, three, reaching the 4th source/drain metal 1623,1625 has partly overlapping with gate metal 19 respectively, promptly second source of part/drain metal 1623 and the 4th source/drain metal 1625 at least partly are positioned at the scope directly over the gate metal 19 to meaning at least, thus, can help the lifting of the conductivity of second crystallizing silicon layer 24.
Comprehensively the above the invention provides a kind of organic electroluminescence cell, can be used for being manufactured with organic electro luminescent display, particularly active organic electroluminescent display.(α-Si) technology is made transistor, moves under the more weak relatively prerequisite of usefulness (mobility) at the electronics of amorphous silicon material, and the present invention has reached the purpose that promotes the magnitude of current with amorphous silicon in the present invention.Effect of the present invention is can provide than the about two times magnitude of current of known technology to organic electroluminescent LED substantially.And the present invention can't cause the aperture opening ratio of unit picture element to descend.Therefore, the invention provides a kind of technology that can promote industrial competitiveness in fact.
Though the present invention illustrates as above with preferred embodiment, so it is not in order to limit the present invention's spirit and invention entity only in the foregoing description.To those of ordinary skill in the art, when understanding and utilize other assembly or mode to produce identical effect easily.Be with, the modification of being done in not breaking away from spirit of the present invention and scope all should be included in the following claim.
Claims (5)
1. an organic electroluminescent shows first unit, comprising:
Substrate;
First amorphous silicon layer is arranged on this substrate, first channel region in the middle of this first amorphous silicon layer comprises, the first source/drain region and the second source/drain region at two ends;
Gate metal is arranged at the top of this first channel region;
Second amorphous silicon layer, second channel region in the middle of comprising, the 3rd source/drain region and the 4th source/drain region at two ends, wherein this second channel region is positioned at the top of this gate metal;
First source/drain metal, second source/drain metal are contacted with this first source/drain region and this second source/drain region of this first amorphous silicon layer respectively;
The 3rd source/drain metal, the 4th source/drain metal, be contacted with the 3rd source/drain region and the 4th source/drain region of this second amorphous silicon layer respectively, and the 3rd source/drain metal and the 4th source/drain metal is electrically connected with this first source/drain metal and this second source/drain metal respectively;
First passivation layer covers this first amorphous silicon layer 14, this gate metal and this second amorphous silicon layer; And
Organic electroluminescent LED is arranged on this first passivation layer and is electrically connected on this first source/drain metal,
Wherein, this first, second, third and the 4th source/drain metal, have partly overlapping with this gate metal respectively.
2. organic electroluminescent as claimed in claim 1 shows first unit, and wherein this first passivation layer also forms a through hole, and this organic electroluminescent LED promptly connects the metal level by this through hole, and is electrically connected with this first source/drain metal.
3. organic electroluminescent as claimed in claim 1 shows first unit, and wherein the 3rd source/drain metal, the 4th source/drain metal are arranged at the 3rd source/drain region of this second amorphous silicon layer and the top of the 4th source/drain region respectively.
4. organic electroluminescent as claimed in claim 1 shows first unit, and wherein the 3rd source/drain metal, the 4th source/drain metal are arranged at the 3rd source/drain region of this second amorphous silicon layer and the below of the 4th source/drain region respectively.
5. organic electroluminescent as claimed in claim 1 shows first unit, also comprises second passivation layer, is arranged between organic electroluminescent LED and this first passivation layer, so that a tabular surface to be provided, makes this organic electroluminescent LED be formed at the surface of this tabular surface.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100514871A CN100379016C (en) | 2006-02-28 | 2006-02-28 | Organic electroluminescence display unit |
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|---|---|---|---|
| CNB2006100514871A CN100379016C (en) | 2006-02-28 | 2006-02-28 | Organic electroluminescence display unit |
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| CN1832194A true CN1832194A (en) | 2006-09-13 |
| CN100379016C CN100379016C (en) | 2008-04-02 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102403313A (en) * | 2011-08-26 | 2012-04-04 | 友达光电股份有限公司 | Semiconductor element and manufacturing method thereof |
| CN104779203A (en) * | 2015-04-23 | 2015-07-15 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof and display device |
| CN106024638A (en) * | 2016-07-20 | 2016-10-12 | 深圳市华星光电技术有限公司 | Film transistor and manufacturing method thereof |
| CN112490254A (en) * | 2020-12-03 | 2021-03-12 | Tcl华星光电技术有限公司 | Array substrate, display panel and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3061907B2 (en) * | 1991-10-01 | 2000-07-10 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
| KR0139573B1 (en) * | 1994-12-26 | 1998-06-15 | 김주용 | Double channel tft and its manufacturing method |
| US5717223A (en) * | 1995-12-22 | 1998-02-10 | Xerox Corporation | Array with amorphous silicon TFTs in which channel leads overlap insulating region no more than maximum overlap |
| JPH10229195A (en) * | 1997-02-12 | 1998-08-25 | Internatl Business Mach Corp <Ibm> | Non-photosensitive vertical redundant two channel thin film transistor and manufacture thereof |
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2006
- 2006-02-28 CN CNB2006100514871A patent/CN100379016C/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403313A (en) * | 2011-08-26 | 2012-04-04 | 友达光电股份有限公司 | Semiconductor element and manufacturing method thereof |
| CN102403313B (en) * | 2011-08-26 | 2014-04-16 | 友达光电股份有限公司 | Semiconductor element and manufacturing method thereof |
| CN104779203A (en) * | 2015-04-23 | 2015-07-15 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof and display device |
| CN104779203B (en) * | 2015-04-23 | 2017-11-28 | 京东方科技集团股份有限公司 | A kind of array base palte and its manufacture method, display device |
| US10403761B2 (en) | 2015-04-23 | 2019-09-03 | Boe Technology Group Co., Ltd. | Array substrate and manufacturing method thereof, and display device |
| CN106024638A (en) * | 2016-07-20 | 2016-10-12 | 深圳市华星光电技术有限公司 | Film transistor and manufacturing method thereof |
| WO2018014441A1 (en) * | 2016-07-20 | 2018-01-25 | 深圳市华星光电技术有限公司 | Thin film transistor and manufacturing method therefor |
| CN112490254A (en) * | 2020-12-03 | 2021-03-12 | Tcl华星光电技术有限公司 | Array substrate, display panel and preparation method thereof |
| WO2022116313A1 (en) * | 2020-12-03 | 2022-06-09 | Tcl华星光电技术有限公司 | Array substrate, display panel, and preparation method therefor |
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| CN100379016C (en) | 2008-04-02 |
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