CN106783886B - Thin film transistor, array substrate and display device - Google Patents
Thin film transistor, array substrate and display device Download PDFInfo
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- CN106783886B CN106783886B CN201710002492.1A CN201710002492A CN106783886B CN 106783886 B CN106783886 B CN 106783886B CN 201710002492 A CN201710002492 A CN 201710002492A CN 106783886 B CN106783886 B CN 106783886B
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- 239000010409 thin film Substances 0.000 title claims abstract description 104
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 abstract description 4
- 208000013201 Stress fracture Diseases 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 208000010392 Bone Fractures Diseases 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010017076 Fracture Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000009638 autodisplay Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the invention provides a thin film transistor, an array substrate and a display device, relates to the technical field of display, and can avoid poor display caused by stress fracture of a region corresponding to an active layer when the thin film transistor is bent. The thin film transistor comprises a switch unit or a plurality of switch units which are connected in series; each of the switching units includes: the grid electrode, a plurality of mutually independent sub active layers respectively provided with an overlapping region with the grid electrode, and a plurality of groups of source electrodes and drain electrodes, wherein each group of source electrodes and drain electrodes are in contact with one sub active layer; and a plurality of source electrodes positioned at one end of the thin film transistor are electrically connected, and a plurality of drain electrodes positioned at the other end of the thin film transistor are electrically connected. The method is used for manufacturing the thin film transistor.
Description
Technical Field
The invention relates to the technical field of display, in particular to a thin film transistor, an array substrate and a display device.
Background
Currently, in Display devices such as Liquid Crystal Displays (LCDs), Organic Light-Emitting diodes (OLEDs), and inorganic electroluminescent displays (inorganic el displays), a Thin Film Transistor (TFT) is often used to control the on/off state of each pixel.
As shown in fig. 1, each thin film transistor includes a source electrode 10, a drain electrode 20, an active layer 30 formed in a channel region between the source electrode 10 and the drain electrode 20, and a gate electrode 40. However, the channel region is often damaged by stress, and particularly, when the flexible display device, such as flexible electronic paper, is bent, stress fracture occurs easily in the region corresponding to the active layer 30 of the thin film transistor, and such fracture may cause that signals cannot be transmitted to the pixel electrode, thereby causing poor display and causing dark spots on the display screen.
Disclosure of Invention
Embodiments of the present invention provide a thin film transistor, an array substrate and a display device, which can prevent poor display caused by stress fracture in a region corresponding to an active layer when the thin film transistor is bent.
In order to achieve the above purpose, the embodiment of the invention adopts the following technical scheme:
in a first aspect, a thin film transistor is provided, which includes a switch unit or a plurality of switch units connected in series; each of the switching units includes: the grid electrode, a plurality of mutually independent sub active layers respectively provided with an overlapping region with the grid electrode, and a plurality of groups of source electrodes and drain electrodes, wherein each group of source electrodes and drain electrodes are in contact with one sub active layer; and a plurality of source electrodes positioned at one end of the thin film transistor are electrically connected, and a plurality of drain electrodes positioned at the other end of the thin film transistor are electrically connected.
Preferably, the plurality of source electrodes in the same switch unit are a plurality of patterns independent of each other, and the plurality of source electrodes at one end of the thin film transistor are connected to the same data line; and/or the plurality of drain electrodes in the same switch unit are a plurality of mutually independent patterns, and the plurality of drain electrodes at the other end of the thin film transistor are connected with the same pixel electrode.
Preferably, a plurality of source electrodes in the same switch unit are connected to form a stripe pattern; and/or a plurality of drain electrodes in the same switch unit are connected into a strip pattern.
Preferably, when the thin film transistor includes a plurality of switch units, the thin film transistor further includes a connection electrode for connecting two adjacent switch units.
Optionally, the connection electrode includes a plurality of hollow areas.
Further optionally, the hollow-out region is disposed between two adjacent sub-active layers, and the two sub-active layers are respectively located in different switch units.
Optionally, the connection electrode comprises a plurality of mutually independent sub-connection electrodes; the source electrode in one of the switch cells is connected to the drain electrode in the adjacent switch cell through the sub-connection electrode.
Preferably, the connection electrode, the source electrode and the drain electrode are made of the same material.
In a second aspect, an array substrate is provided, which includes a plurality of gate lines and a plurality of data lines, and a plurality of pixel regions defined by the plurality of gate lines and the plurality of data lines, each of the pixel regions includes a thin film transistor and a pixel electrode, and the thin film transistor is the thin film transistor described above; and the source electrode positioned at one end of the thin film transistor is connected with the data line, and the drain electrode positioned at the other end of the thin film transistor is connected with the pixel electrode.
In a third aspect, a display device is provided, which includes the array substrate.
Embodiments of the present invention provide a thin film transistor, an array substrate, and a display device, in which an active layer of a switching unit in the thin film transistor includes a plurality of sub-active layers independent from each other, so that when the thin film transistor is bent, stress of a region corresponding to the active layer may be dispersed, thereby preventing the region corresponding to the active layer from being broken. In addition, one sub active layer is in contact with one group of source electrodes and drain electrodes, so that one switching unit comprises a plurality of sub thin film transistors, even if one or more sub thin film transistors in the switching unit are damaged, other sub thin film transistors can still charge the pixel electrode, and the pixel can still work, thereby improving the reliability of the thin film transistors in use.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a thin film transistor provided in the prior art;
fig. 2(a) is a schematic structural diagram of a thin film transistor including a switching unit according to an embodiment of the present invention;
fig. 2(b) is a schematic structural diagram of a thin film transistor including a switch unit according to an embodiment of the present invention;
fig. 3(a) is a schematic structural diagram of a thin film transistor including a plurality of switch units according to an embodiment of the present invention;
fig. 3(b) is a schematic structural diagram of a thin film transistor including a plurality of switch units according to an embodiment of the present invention;
fig. 3(c) is a schematic structural diagram of a thin film transistor including a plurality of switch units according to an embodiment of the present invention;
fig. 3(d) is a schematic structural diagram of a thin film transistor including a plurality of switch units according to an embodiment of the present invention;
fig. 4(a) is a circuit diagram corresponding to the thin film transistor shown in fig. 3(a), 3(b) and 3 (d);
fig. 4(b) is a circuit diagram corresponding to the thin film transistor shown in fig. 3 (c).
Reference numerals:
01-a switching unit; 10-a source electrode; 20-a drain electrode; 30-an active layer; 301-sub active layer; 40-a gate; 50-connecting electrodes; 501-sub connection electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a thin film transistor, which includes one switching unit 01 as shown in fig. 2(a) -2 (b) or a plurality of switching units 01 connected in series as shown in fig. 3(a) -3 (d); each switching unit 01 includes: a gate electrode 40, a plurality of mutually independent sub-active layers 301 having overlapping regions with the gate electrode 40, a plurality of sets of source electrodes 10 and drain electrodes 20, each set of source electrodes 10 and drain electrodes 20 contacting one sub-active layer 301; among them, the source electrodes 10 located at one end of the thin film transistor are electrically connected, and the drain electrodes 20 located at the other end of the thin film transistor are electrically connected.
First, the number of the switching units 01 included in the thin film transistor is not limited, and one switching unit 01 may be included as shown in fig. 2(a) to 2(b), or a plurality of switching units 01 may be included as shown in fig. 3(a) to 3(d) (two switching units 01 are illustrated as an example in fig. 3(a) to 3 (d)).
Here, when the thin film transistor includes a plurality of switching cells 01, how the switching cells 01 are connected in series is not limited. For example, the switching cells 01 may be connected in series by a connection electrode, or two adjacent switching cells 01 may be connected in series by directly using a source or a drain of the switching cell 01.
Second, the active layer 30 in the switching cell 01 includes a plurality of sub-active layers 301, and the materials of the plurality of sub-active layers 301 may be the same or different. When the materials of the plurality of sub active layers 301 in the switching cell 01 are the same, the plurality of sub active layers 301 may be simultaneously formed.
As for the material of the sub-active layer 301, for example, single crystal silicon, polycrystalline silicon, or amorphous silicon (α -Si) may be used.
Third, one end and the other end of the thin film transistor refer to one end of the thin film transistor connected to the data line or one end of the thin film transistor connected to the pixel electrode.
Fourthly, how the plurality of source electrodes 10 located at one end of the thin film transistor are electrically connected is not limited, and the plurality of source electrodes 10 may be electrically connected through a data line, the plurality of source electrodes 10 may be electrically connected through a connection portion, and the connection portion and the source electrodes 10 may be formed at the same time. Similarly, the plurality of drain electrodes 20 may be electrically connected to each other through the pixel electrode, or the plurality of drain electrodes 20 may be electrically connected to each other through the connection portion, and the connection portion and the drain electrodes 20 may be formed at the same time.
Fifth, the number of sub-active layers 301 in one switching unit 01 is the same as the number of source and drain electrodes 10 and 20, so as to ensure that each set of source and drain electrodes 10 and 20 is in contact with one sub-active layer 301.
Here, one sub-active layer 301 and one set of source and drain electrodes 10 and 20 may form one sub-thin film transistor, and since a plurality of sub-active layers 301 are included in one switching unit 01 and each sub-active layer 301 is in contact with one set of source and drain electrodes 10 and 20, it is equivalent to one switching unit 01 including a plurality of sub-thin film transistors.
Based on the above, since the width-to-length ratio (W/L) of one switching unit 01 is equal to the sum of the width-to-length ratios (W/L) of the plurality of sub thin film transistors included in one switching unit 01, the active layer 30 in one switching unit 01 is divided into the plurality of sub active layers 301 without affecting the electrical properties of the switching unit 01, that is, without affecting the electrical properties of the thin film transistors.
On the basis, even if one or more sub-thin film transistors in the switching unit 01 are damaged, the rest of the sub-thin film transistors can still charge the pixel electrode. However, the width-to-length ratio of the switching unit 01 is changed, and if the number of damaged sub-thin film transistors is small, the influence on pixel charging is negligible, and the pixel can still work; if the number of the damaged sub-tfts is large, the aspect ratio of the switching unit 01 is significantly changed, and the charging may be insufficient. However, compared with the prior art in which the active layer 30 of the thin film transistor is completely broken and does not work, the pixel of the embodiment of the invention can still work, and the reliability of the thin film transistor is improved.
In the embodiment of the present invention, since the active layer 30 of the switching unit 01 in the thin film transistor includes the plurality of sub-active layers 301 independent from each other, when the thin film transistor is bent, stress of a region corresponding to the active layer 30 may be dispersed, so that the region corresponding to the active layer 30 may be prevented from being broken. In addition, since one sub active layer 301 is in contact with one set of the source electrode 10 and the drain electrode 20, it is equivalent to one switching unit 01 including a plurality of sub thin film transistors, and therefore, even if one or more sub thin film transistors in the switching unit 10 are damaged, other sub thin film transistors can still charge the pixel electrode, and the pixel can still operate, thereby improving the reliability of the thin film transistor in use.
Preferably, as shown in fig. 2(b) and fig. 3(a) -3 (c), the plurality of source electrodes 10 in the same switching unit 01 are a plurality of patterns independent of each other, and the plurality of source electrodes 10 at one end of the thin film transistor are connected to the same data line; and/or, the plurality of drain electrodes 20 in the same switching unit 01 are a plurality of patterns independent of each other, and the plurality of drain electrodes 20 at the other end of the thin film transistor are connected to the same pixel electrode.
When the plurality of source electrodes 10 are a plurality of patterns independent of each other, the plurality of source electrodes 10 at one end of the thin film transistor electrically connect the plurality of source electrodes 10 together through the same data line; when the plurality of drain electrodes 20 are a plurality of patterns independent of each other, the plurality of drain electrodes 20 at the other end of the thin film transistor electrically connect the plurality of drain electrodes 20 together through the same pixel electrode.
Here, when the plurality of source electrodes 10 are a plurality of patterns independent of each other, the material of the plurality of source electrodes 10 may be the same or different. When the materials of the plurality of source electrodes 10 are the same, the plurality of source electrodes 10 may be simultaneously formed. Similarly, if the plurality of drain electrodes 20 are formed in a plurality of patterns independent of each other, the material of the plurality of drain electrodes 20 may be the same or different. When the materials of the plurality of drains 20 are the same, the plurality of drains 20 may be simultaneously formed. In addition, the source electrode 10 and the drain electrode 20 may be made of the same material or different materials.
In the embodiment of the present invention, since the plurality of source electrodes 10 and the plurality of drain electrodes 20 in the same switching unit 01 are independent patterns, when the thin film transistor is bent, stress applied to the corresponding region of the active layer 30 can be further reduced, and the corresponding region of the active layer 30 can be prevented from being broken.
Preferably, as shown in fig. 2(a) and 3(d), a plurality of sources 10 in the same switch unit 01 are connected in a stripe pattern; and/or, a plurality of drains 20 in the same switching unit 01 are connected in a stripe pattern.
In the embodiment of the invention, since the plurality of sources 10 in the switching unit 01 are connected into one stripe pattern, the plurality of sources 10 can be simultaneously formed through one patterning process. Similarly, since the plurality of drain electrodes 20 are connected in a stripe pattern, the plurality of drain electrodes 20 may be simultaneously formed through one patterning process.
Preferably, when the thin film transistor includes a plurality of switching cells 01, as shown in fig. 3(a) -3 (d), the thin film transistor further includes a connection electrode 50 for connecting two adjacent switching cells 01.
The shape of the connection electrode 50 is not limited, and it is assumed that two adjacent switching cells 01 are connected in series.
As shown in fig. 3(a), 3(b) and 3(d), the connection electrode 50 may connect two adjacent switch cells 01, wherein the sources 10 of one switch cell 01 are connected together, the drains 20 of the adjacent switch cells 01 are connected together, and the sources 10 of the adjacent switch cells 01 are connected to the drains 20 connected together through the connection electrode 50, and the circuit diagram corresponding to fig. 3(a), 3(b) and 3(d) is shown in fig. 4 (a). Of course, as shown in fig. 3(c), one source 10 of one switch cell 01 and one drain 20 of the adjacent switch cell 01 may be connected in a one-to-one correspondence manner, and the circuit diagram corresponding to fig. 3(c) is shown in fig. 4 (b).
Here, the material of the connection electrode 50 is not limited, and may be the same as or different from the material of the source electrode 10 and the drain electrode 20.
In the embodiment of the present invention, since the thin film transistor includes the connection electrode 50, the plurality of switching units 01 may be connected together through the connection electrode 50. The on-off state of the thin film transistor is controlled by the plurality of switching units 01 to ensure that the voltage in the pixel electrode is maintained for a long time in case of power-off.
Further preferably, as shown in fig. 3(a), the connection electrode 50 includes a plurality of hollowed-out regions.
The setting position of the hollow area in the connection electrode 50, the size of the hollow area, and the number of the hollow areas are not limited, and may be set as needed.
In the embodiment of the present invention, since the connection electrode 50 includes the hollow-out region, when the thin film transistor is bent, stress applied to the connection electrode 50 may be reduced, and since the connection electrode 50 is connected to the source electrode 10 or the drain electrode 20, and the source electrode 10 and the drain electrode 20 are connected to the sub-active layer 301, stress applied to a region corresponding to the active layer 30 may be weakened, and when the thin film transistor is bent, the region corresponding to the active layer 30 may be prevented from being broken.
Further, as shown in fig. 3(a), the hollow area is disposed between two adjacent sub-active layers 301, and the two sub-active layers 301 are respectively located in different switching units 01.
Since the source electrode 10 and the drain electrode 20, which are in contact with the sub-active layers 301, are further located between the two sub-active layers 301 in the adjacent switching cells 01, so that the metal area between the two sub-active layers 301 in the adjacent switching cells 01 is large, the hollow area is disposed between the two adjacent sub-active layers 301, and when the thin film transistor is bent, the stress applied to the connection electrode 50 can be reduced, and thus the stress applied to the area corresponding to the active layer 30 can be reduced.
Preferably, as shown in fig. 3(c), the connection electrode 50 includes a plurality of sub-connection electrodes 501 independent of each other; the source 10 in one switching cell 01 is connected to the drain 20 in the adjacent switching cell 01 through the sub-connection electrode 501.
The sub-connection electrodes 501 are respectively connected to the source electrodes 10 and the drain electrodes 20 in a one-to-one correspondence, and the source electrodes 10 and the drain electrodes 20 are located in two adjacent switch units 01.
In the embodiment of the present invention, since the connection electrode 50 includes the plurality of sub-connection electrodes 501 independent of each other, stress applied to the connection electrode 50 can be reduced when the thin film transistor is bent. Since the connection electrode 50 is connected to the source electrode 10 or the drain electrode 20, and the source electrode 10 and the drain electrode 20 are connected to the sub-active layer 301, it is possible to further prevent the region corresponding to the active layer 30 from being broken when the thin film transistor is bent.
Preferably, the connection electrode 50, the source electrode 10 and the drain electrode 20 are of the same material in the same layer.
The material of the connection electrode 50, the source electrode 10, and the drain electrode 20 is not limited, and may be, for example, aluminum, chromium, an aluminum alloy, or the like.
In the embodiment of the invention, since the connection electrode 50, the source electrode 10 and the drain electrode 20 are made of the same material in the same layer, the connection electrode 50, the source electrode 10 and the drain electrode 20 can be formed simultaneously by a single patterning process.
The embodiment of the invention provides an array substrate, which comprises a plurality of grid lines, a plurality of data lines and a plurality of pixel areas, wherein the pixel areas are limited by the grid lines and the data lines; as shown in fig. 2(a) -2 (b) and 3(a) -3 (d), the source electrode 10 at one end of the thin film transistor is connected to the data line, and the drain electrode 20 at the other end of the thin film transistor is connected to the pixel electrode.
In the embodiment of the invention, since the array substrate includes the thin film transistor and the active layer 30 of each switching unit 01 in the thin film transistor includes the plurality of mutually independent sub-active layers 301, when the thin film transistor is bent, the stress of the region corresponding to the active layer 30 can be dispersed, so that the region corresponding to the active layer 30 can be prevented from being broken. In addition, since one sub active layer 301 is in contact with one set of the source electrode 10 and the drain electrode 20, even if one or more sub thin film transistors in the switching unit 10 are damaged, other sub thin film transistors can still charge the pixel electrode, and the pixel can still operate, so that the reliability of the thin film transistor in use is improved, and the reliability of the array substrate in use is improved.
The embodiment of the invention also provides a display device which comprises the array substrate.
The display device provided by the embodiments of the present invention may be any device that displays an image, whether in motion (e.g., video) or stationary (e.g., still image), and whether textual or pictorial. More particularly, it is contemplated that the embodiments may be implemented in or associated with a variety of electronic devices, such as, but not limited to, mobile telephones, wireless devices, Personal Data Assistants (PDAs), hand-held or portable computers, GPS receivers/navigators, cameras, MP3 players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, auto displays (e.g., odometer display, etc.), navigators, cockpit controls and/or displays, displays of camera views (e.g., of a rear-view camera in a vehicle), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., of a display for an image of a piece of jewelry), and the like, as well as display components such as liquid crystal display panels.
When the display device is a liquid crystal display panel, the liquid crystal display panel includes an array substrate, a pair of substrates aligned with the array substrate, and a liquid crystal layer filled between the array substrate and the pair of substrates.
In the embodiment of the invention, since the display device includes the array substrate including the thin film transistor, and the active layer 30 of the switching unit 01 in the thin film transistor includes the plurality of sub-active layers 301 independent of each other, when the display device is bent, the stress of the region corresponding to the active layer 30 can be dispersed, so that the region corresponding to the active layer 30 can be prevented from being broken. In addition, since one sub active layer 301 is in contact with one group of source and drain electrodes 10 and 20, which is equivalent to one switching unit 01 including a plurality of sub thin film transistors, even if one or more of the sub thin film transistors are damaged, the other sub thin film transistors can still charge the pixel electrodes, thereby improving the reliability of the thin film transistors in use and avoiding the display device from having poor display.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (4)
1. A thin film transistor includes a plurality of switching cells connected in series;
each of the switching units includes: the grid electrode, a plurality of mutually independent sub active layers respectively provided with an overlapping region with the grid electrode, and a plurality of groups of source electrodes and drain electrodes, wherein each group of source electrodes and drain electrodes are in contact with one sub active layer;
the source electrodes positioned at one end of the thin film transistor are electrically connected, and the drain electrodes positioned at the other end of the thin film transistor are electrically connected;
the thin film transistor also comprises a connecting electrode which is used for connecting two adjacent switch units;
the connecting electrode comprises a plurality of hollow areas;
the hollow-out region is arranged between two adjacent sub-active layers, and the two sub-active layers are respectively located in different switch units.
2. The thin film transistor according to claim 1, wherein the connection electrode, the source electrode, and the drain electrode are formed of the same material.
3. An array substrate comprising a plurality of gate lines and a plurality of data lines, and a plurality of pixel regions defined by the plurality of gate lines and the plurality of data lines, each of the pixel regions comprising a thin film transistor and a pixel electrode, wherein the thin film transistor is the thin film transistor of any one of claims 1-2;
and the source electrode positioned at one end of the thin film transistor is connected with the data line, and the drain electrode positioned at the other end of the thin film transistor is connected with the pixel electrode.
4. A display device comprising the array substrate according to claim 3.
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| CN109003573B (en) * | 2018-08-08 | 2020-05-15 | 上海天马有机发光显示技术有限公司 | Organic light emitting display panel and display device |
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| US4938565A (en) * | 1987-08-21 | 1990-07-03 | Nec Corporation | Thin-film transistor array used for liquid-crystal display device |
| CN1584721A (en) * | 2003-08-20 | 2005-02-23 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and method of fabricating the same |
| CN101114675A (en) * | 2006-07-25 | 2008-01-30 | 元太科技工业股份有限公司 | Multi-channel thin-film transistor structure |
| CN102832212A (en) * | 2012-08-20 | 2012-12-19 | 京东方科技集团股份有限公司 | Array substrate, display device and drive method thereof |
| CN104851888A (en) * | 2014-02-17 | 2015-08-19 | 三星显示有限公司 | Thin film transistor array panel |
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| US6646692B2 (en) * | 2000-01-26 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid-crystal display device and method of fabricating the same |
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| US4938565A (en) * | 1987-08-21 | 1990-07-03 | Nec Corporation | Thin-film transistor array used for liquid-crystal display device |
| CN1584721A (en) * | 2003-08-20 | 2005-02-23 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and method of fabricating the same |
| CN101114675A (en) * | 2006-07-25 | 2008-01-30 | 元太科技工业股份有限公司 | Multi-channel thin-film transistor structure |
| CN102832212A (en) * | 2012-08-20 | 2012-12-19 | 京东方科技集团股份有限公司 | Array substrate, display device and drive method thereof |
| CN104851888A (en) * | 2014-02-17 | 2015-08-19 | 三星显示有限公司 | Thin film transistor array panel |
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