CN101114102A - Method for setting and producing silicon based photon molecule - Google Patents
Method for setting and producing silicon based photon molecule Download PDFInfo
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- CN101114102A CN101114102A CNA2007100251279A CN200710025127A CN101114102A CN 101114102 A CN101114102 A CN 101114102A CN A2007100251279 A CNA2007100251279 A CN A2007100251279A CN 200710025127 A CN200710025127 A CN 200710025127A CN 101114102 A CN101114102 A CN 101114102A
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- 238000000034 method Methods 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 8
- 230000000670 limiting effect Effects 0.000 claims abstract description 4
- 229910017875 a-SiN Inorganic materials 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 21
- 230000008878 coupling Effects 0.000 claims description 19
- 238000010168 coupling process Methods 0.000 claims description 19
- 238000005859 coupling reaction Methods 0.000 claims description 19
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 16
- 238000001020 plasma etching Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000005357 flat glass Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000000737 periodic effect Effects 0.000 abstract description 2
- 229910004301 SiNz Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910004205 SiNX Inorganic materials 0.000 abstract 1
- 229910004304 SiNy Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000002096 quantum dot Substances 0.000 description 14
- 238000009826 distribution Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 8
- 230000001105 regulatory effect Effects 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Abstract
The invention relates to a silicon photon molecule fabrication process. A photon molecule is made by a growth of an air phase common-form film. A column-shaped platform with a diameter of 0.5-5 Mum and a height of 0.4-2 Mum is arranged on a glass and a silica underlay, and two or a plurality of three-dimensional limiting micro-cavity structures with an a-SiNz active layer are made with the growth way of the common-form film, namely, two micro-cavity with an active layer and a three-dimensional DBR limiting structure are formed. And two DBRs are arranged, and a resonance wavelength of the micro-cavity at two sides of two active layers is Lambada. The DBR comprises an a-SiNx film layer and an a-SiNy film layer of a middle-low refractive index layer and a high refraction layer of 4 plus or minus 10 periods, and the thickness of each refraction layer is Lambada / (4n); n represents a refractive index, and the active layer is an a-SiNz film of which the refractive index is between that of a low refractive index layer and a high refractive index layer with a thickness of Lambada / (2n). A distance between two active layers is m periods, and the thickness d of DBR is equal to m multiples L, and m is from 0.5 to 9.5, and L is the thickness of a periodic high-low refractive index film.
Description
1. The technical field is as follows:
the invention relates to a method for setting and preparing silicon-based photonic molecules, in particular to a novel method for designing and preparing silicon-based photonic molecules by combining one-dimensional coupling microcavity setting and a gas-phase conformal film growth method.
2. Background art:
confinement of photon states in micron-scale semiconductor microcavity structures can create properties similar to the distribution of electron states in atoms, and such structures can be referred to as photonic quantum dots [1.s.chen, b.qian, k.chen, x.zhang, j.xu, z.ma, w.li, and x.huang, appl.phys.lett.90, 174101 (2007) ] or photonic atoms. Coupling two (more) photonic quantum dots will form a diatomic (polyatomic) photonic molecular structure similar to a hydrogen molecule. This manipulation of the photonic state, which is impossible to achieve in ordinary atoms and molecules, has a wide range of applications, ranging from exploring the fundamental physical problems of molecular bonding to more efficient semiconductor lasers.
The use of optical microcavity structures to manipulate the coupling of photonic quantum dots will be easier and easier to understand than electron energy quantized quantum dots, since it does not require consideration of multi-body effects such as complex electron-electron interactions in coupled semiconductor quantum dots. International research on photonic molecules has also been conducted in the initiative and mostly by lateral coupling of photonic quantum dot cavities prepared by etching techniques, including Fabry-Perot type microcavity structures of the III-V family [2. M.bayer, t.gutbrod, j.p.reithmain, a.forchel, t.l.reinecke, p.a.knipp, a.a.dremin, and v.d.kulakovskii, phys.rev.lett.81, 2582 (1998) ] and whisper Gallery (wisery) structures [3.a.nakagawa, s.ishi, and t.baba, phys.lett.86, 041112 (2005), 4.t.mukaiyama, k.takeda, h.miyazaki, y.jkaimva, and kuwawa. Gmivr-r.82 (1999) ].
In the previous work, the applicant successfully realizes the structure [1] of the silicon-based photon quantum dots by using a vapor-phase conformal thin film growth method, and on the basis, the work combines the design of a one-dimensional coupling microcavity structure to realize the longitudinally-coupled diatomic-like photon molecular structure of two (or more) photon quantum dots. Through the measurement of the micro-zone Photoluminescence (PL) spectrum, the bonding state and the anti-bonding state of the photonic molecule and the energy level distribution inside thereof can be clearly observed, as shown in fig. 1 and 4. The simple diatomic photon molecular structure is only the first step of manufacturing a more complex structure, and a photon macromolecular structure can be obtained by arranging more photon quantum dots, so that a photon energy band structure similar to a crystal is formed, and the photon energy band structure is different from the energy band theory of a photon crystal formed by a common periodic medium structure and is a photon energy band in a new meaning. The method has important significance for quantum regulation and manufacture of more efficient lasers by adjusting the energy level structure of photon molecules. The work realizes a photon molecular structure on a silicon-based material, and has important influence on silicon-based optical interconnection.
3. The invention content is as follows:
the purpose of the invention is: photon molecules are constructed by combining the coupling cavity structure design and a gas phase conformal film growth method. A photon energy band structure similar to a hydrogen diatomic molecular energy level structure is realized. The invention also aims to realize a more complex photonic macromolecular structure through geometrical optics and coupling cavity design on the premise of realizing diatomic photonic molecules. The invention also aims to: the energy interval between the bonding state and the reverse bonding state is adjusted by adjusting the distance between the longitudinal active layers, and the energy level distribution inside the bonding state reverse bonding state is adjusted by adjusting the transverse size of the pattern substrate, so that the purpose of manually adjusting and controlling the energy level distribution inside photon molecules is achieved.
The invention is especially based on the Chinese patent application 200710020973.1, namely a method for preparing photon quantum dots by gas phase conformal film growth, which is applied by the applicant, and is a novel method for preparing a three-dimensional Distributed Bragg Reflector (DBR) by utilizing a conformal film growth technology to limit two (a plurality of) photon quantum dots to form photon molecules; the purpose of regulating and controlling the energy interval between the bonding state and the reverse bonding state of the photon molecules is achieved by designing the distance between the active layers in the coupling cavity; the purpose of regulating and controlling the internal energy level distribution of the photon molecule in a bonding state and an anti-bonding state is achieved by regulating the transverse size of the patterned substrate. The method has important significance for quantum regulation of photons, silicon-based optical interconnection and more efficient manufacturing of silicon-based lasers.
The technical scheme of the invention is as follows: arranging silicon-based photon molecules, preparing photon molecules by vapor phase conformal film growth, arranging a cylindrical platform with the size of 0.5-5 μm and the height of 0.4-2 μm on a glass substrate and a silicon substrate, and preparing a silicon-based photonic crystal structure containing two active layers of a-SiN by a conformal film growth method z The three-dimensional confinement microcavity structure of (a): namely forming a microcavity of a three-dimensional DBR confinement structure of the two active layers; two DBRs are arranged at two sides of two active layers, the resonant wavelength is lambda, the DBR comprises 4 +/-10 periods of a-SiN of a medium-low refractive index layer and a high refractive index layer x And a-SiN y A thin film, each refractive layer having a thickness of λ/(4 n); n is a refractive index, and the active layer has a refractive index between that of the low refractive index layer and that of the high refractive index layeriN z A thin film having a thickness of λ/(2 n); the thickness d = m × L of the DBR in which the distance between the two active layers is m periods, m is 0.5 to 9.5, and L is the thickness of the high and low refractive index thin film of one period.
The resonance center of the microcavity is 730nm, and the microcavity consists of a 5-period DBR + one active layer + 2.5-period DBR + one active layer + 5-period DBR; the refractive index n of the low-refractive-index layer in the DBR is 1.9, the optical band gap Eg is 3.8eV, and the thickness is 96nm; the high refractive index n is 2.8, the eg is 2.0eV, and the thickness is 65nm; the active layer n is 2.1, the eg is 2.5eV, and the thickness is 173nm. As shown in fig. 2.
The preparation method for preparing photon molecules by growing a gas phase conformal film comprises the steps of firstly manufacturing a cylindrical platform with the height of 0.4-2 mu m on a glass and silicon substrate as a pattern substrate by photoetching and Reactive Ion Etching (RIE); periodically depositing prepared three-dimensionally limited a-SiN provided with two active layers on the patterned substrate by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method x /a-SiN y A microcavity.
Cylindrical platforms with lateral dimensions of 0.5-5 μm and a height of 0.4-2 μm are fabricated on flat glass or polished silicon substrates using specially designed stencils and photolithography and Reactive Ion Etching (RIE) techniques. Then adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method to prepare two active layers of a-SiN by vapor conformal film growth z a-SiN of x /a-SiN y A microcavity.
The coupling strength between the two active layers is regulated and controlled by designing different distances d between the two active layers, namely changing the period number m of the DBR between the two active layers, so that the purpose of regulating the energy interval between the bonding state and the reverse bonding state of the photon molecules is realized.
The principle of the invention is as follows: the method comprises the steps of growing a microcavity through a conformal thin film, designing two mode-coupled active layers in the vertical direction, and forming a photon molecular structure similar to diatom coupling in space through the transverse photon limiting effect of a side DBR. As can be seen from the experimental results, the PL spectrum shows obvious mode distribution of bonding state (bonding-BN) and anti-bonding state (anti-bonding-ABN). Furthermore, by changing the distance between the two active layers, the distribution form of photon molecular modes with different coupling degrees can be observed, and the method has important significance for designing and regulating the mode emission of photon molecules.
A. And (3) longitudinal coupling design of photon molecules. The energy separation between the bonding and anti-bonding states can be adjusted by changing the distance between the active layers. Considering two interacting cavities, their resonance energies are respectively E 1 ＝hc/λ 1 And E 2 ＝hc/λ 2 The coupling effect between two non-degenerate energy levels will cause their resonant frequencies to split, the magnitude of this split being proportional to the strength of the coupling between them. Coupling produces two modes E + And E - Coupling energy between them is W 12 . The pattern of two cleaves can be expressed as,
when E is 1 ＝E 2 If = E, that is, the emission modes of the two interacting cavities are the same, the cavities are symmetrical one-dimensional photonic bandgap coupled micro-cavities, the above formula is simplified,
E + ＝E+|W 12 |
E - ＝E-|W 12 |
the distance between the two splitting modes is 2|W 12 |。
For the one-dimensional case, the variation of the energy separation of mode splitting with distance from the cavity between the active layers can be obtained by computer simulation. As shown in fig. 3. It can be seen that as the distance between the active layers gets closer together, the split spacing of the modes 2|W 12 The larger is | the larger. Therefore, the energy interval between the bonding state and the reverse bonding state of the photon molecule can be adjusted.
B. Designing the molecular energy level distribution on the bonding state and the reverse bonding state. By adjusting the lateral dimension of the substrate pattern, the molecular energy level distribution in the bonding state and the anti-bonding state is adjusted.
The mode eigenvalues of the three-dimensional confined microcavity have obvious size dependence on the mode confinement effect, and the mode eigenvalues can be analogous to the characteristics of quantum dots quantized with respect to electron energy.
The eigenvalue theoretical calculation formula of the mode is as follows:
E Ph is the photon energy eigenvalue of one photon quantum dot; k is a radical of formula 0 ＝2πn/λ 0 Represents the longitudinal wave vector of the microcavity; k is a radical of x And k y Is the wavevector associated with the microcavity lateral dimensions:
m x，y =0,1,2,3, … represents the number of transverse quanta in the microcavity numerical model; l represents the transverse dimension of the microcavity. The molecular energy level distribution in the bonding state and the anti-bonding state can be controlled by controlling different transverse dimensions of a substrate pattern used for the growth of the conformal thin film.
FIG. 4 is a plot of the PL spectra of micro-regions of a sample of photonic molecules vapor conformally grown on a substrate pattern of varying lateral dimensions. From the PL spectrum, it can be seen that the photonic molecules generate two discrete light-emitting bands due to mode coupling of the two active layers in the vertical direction, corresponding to the bonding state (BN) and the anti-bonding state (ABN) in diatomic molecules, and the energy separation is substantially consistent and does not vary with the lateral dimension, indicating that the energy separation of the bonding state and the anti-bonding state is only related to the distance between the active layers. Mode splitting occurs in both the bonding and anti-bonding states due to the optical confinement effect of the lateral DBR, corresponding to split energy levels in the molecule in both states. As the lateral dimensions decrease, the number of modes corresponding to the energy levels of the photonic molecule continues to decrease, the spacing of the mode splitting increases, and the depth of the splitting also gradually increases, closer and closer to the spectrum of the diatomic-like molecule. As can be seen from fig. 4 (a), at lateral dimensions close to 1 μm, the bonded and anti-bonded states due to longitudinal coupling have been completely split into distinct and independent photonic molecular energy levels. Therefore, the purpose of regulating and controlling the molecular energy levels of the photon molecules in the bonding state and the reverse bonding state can be achieved by controlling the transverse size of the sample.
The invention is characterized in that: the preparation method for conformally growing the amorphous silicon nitride photon molecules on the pattern substrate from bottom to top by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method has the following advantages:
1. three-dimensional DBR optical confinement: the conformal growth method creates DBR light confinement for all directions of the active layer. Compared with the microcavity side air reflecting surface prepared by a top-down etching method, the side DBR has higher reflectivity, so that stronger photon limitation can be realized.
2. The energy interval between the bonding state and the anti-bonding state is adjusted by adjusting the distance d between the longitudinal active layers, and the molecular energy level distribution on the bonding state and the anti-bonding state is adjusted by adjusting the transverse size of the patterned substrate, so that the purpose of manually adjusting the photon molecular energy level distribution is realized.
3. By designing more active layers and regulating and controlling the distance between the active layers, the structure of the photon macromolecule can be designed. Has important significance for quantum regulation and control devices of photons and research of basic physical problems such as interatomic coupling effect and the like.
4. The probability of introducing defects in the process is avoided: compared with the microcavity prepared by the top-down etching method, the formation of dangling bonds for weakening luminescence can be reduced due to the reduction of the etching process, so that the quality of the microcavity is ensured.
5. The process is simple and easy to implement, and is convenient for large-scale production: the method is simple, the process is few, once large-scale industrial production is carried out, the cost can be greatly saved, and the product repeatability is high.
6. The method plays an important role in silicon-based monolithic electro-optical interconnection and all-optical interconnection. The method has important significance for further developing silicon-based high-efficiency lasers and researching the application of silicon-based photon quantum regulation and control devices in the field of quantum information.
4. Description of the drawings:
fig. 1 is a schematic diagram of the structural change of energy level from a photon quantum dot to a photon molecule, and the process of the change of the electron energy level from a hydrogen atom to a hydrogen molecule is shown as a comparison.
FIG. 2 is a schematic diagram of a photonic molecular structure formed by a 5-period DBR +1 active layer + 2.5-period DBR +1 active layer + 5-period DBR
FIG. 3. Computer simulation of (a) transmission spectra of a one-dimensional coupling cavity; (b) a reflectance spectrum; (c) Curve of energy separation of coupled splitting as a function of distance between active layers
FIG. 4 is a PL Mode spectrum of photon molecules with different lateral dimensions (BN-Bonding Mode; ABN-Anti-Bonding Mode); (a) - (d) representing patterned substrates having lateral dimensions of 1,2,3 and 4 μm respectively
5. The specific implementation mode is as follows:
cylindrical platforms with lateral dimensions of 1,2,3, 4 μm and a height of 0.6 μm were fabricated on a flat glass substrate using a specially designed template and photolithography and Reactive Ion Etching (RIE) techniques. Then adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) method to prepare three-dimensionally limited a-SiN by vapor conformal film growth x A microcavity.
1. Cylindrical platforms with lateral dimensions of 1,2,3, 4 μm and a height of 0.6 μm were fabricated on a glass substrate using photolithography and Reactive Ion Etching (RIE) techniques.
a) Template design: the photoetching template is prepared by utilizing a microelectronic planar process plate making technology, and the side length of the pattern is 1,2,3 and 4 mu m square.
b) Pattern transfer I: the pattern of the template was transferred to a Cr film coated on a glass substrate using a microelectronic planar process lithography technique.
The formula of the Cr mask corrosive liquid comprises the following components: ce (NO) 3 ) 4 ·2NH 4 NO 3 ∶HClO 4 ∶H 2 O =100 g: 25 ml: 650ml. The etching temperature is room temperature.
c) Pattern transfer II: the pattern on the Cr film was transferred to glass using Reactive Ion Etching (RIE) techniques to form a cylindrical mesa with lateral dimensions of 1,2,3, 4 μm and a height of 0.6 μm.
The specific conditions for RIE are as follows:
etching gas source and flow: CHF 3 30sccm
O 2 5sccm
Power source frequency: 13.56MHz
Power: 300W
Reaction chamber pressure: 4.0Pa
After the RIE is completed, the Cr film mask on the columnar lands is etched away. The formula of the corrosive liquid is the same as that of the corrosive liquid.
2. Photonic molecular structure design
The resonance center of the designed microcavity is 730nm, and the microcavity consists of a 5-period DBR + one active layer + 2.5-period DBR + one active layer + 5-period DBR.
Low refractive index a-SiN in DBRs x Layer R =8, refractive index 1.9, optical bandgap 3.8eV, thickness 96nm; high refractive index a-SiN in DBR y Layer R =0.5, refractive index 2.8, optical band gap 2.0eV, thickness 65nm.
Active layer a-SiN z Layer R =2, refractive index 2.1, optical band gap 2.5eV, thickness 173nm.
The design parameters of an optical microcavity consisting of a 5-period DBR + one active layer + 2.5-period DBR + one active layer + 5-period DBR with a resonance center at 730nm are shown in table 1.
3. And depositing a photonic molecular structure on the pattern substrate.
3-1, fixation of SiH 4 The flow rate is 6sccm, and NH is adjusted according to the flow rate ratio R 3 Flow, PECVD deposition of 5 cycles of a-SiN on a patterned substrate x /a-SiN y A film.
(a) Growing R =8 a-SiN x Layer of NH 3 The flow rate was 48sccm, the growth time was 9 '40', and the thickness was 96nm;
(b) Growing a-SiN with R =0.5 y Layer of NH 3 The flow rate was 3sccm, the growth time was 6 '28', and the thickness was 65nm;
repeating the processes (a) and (b) to grow DBR for 5 periods.
The specific process conditions for film growth in PECVD are as follows:
power source frequency: 13.56MHz
Power density: 0.6W/cm 2
Reaction chamber pressure: 40Pa
Substrate temperature: 250 ℃ C
3-2, fixed SiH 4 The flow rate is 6sccm, and NH is adjusted according to the flow rate ratio R 3 Flow rate, a-SiN at 5 cycles x /a-SiN y Forming a-SiN on the thin film x An active layer.
Growing R =2 a-SiN by PECVD method x Active layer of NH 3 The flow rate was 12sccm, the growth time was 16'50", and the thickness was 173nm.
The specific process conditions for the film growth by the PECVD method are as follows:
power source frequency: 13.56MHz
Power density: 0.6W/cm 2
Reaction chamber pressure: 40Pa
Substrate temperature: 250 deg.C
3-3, fixation of SiH 4 A flow rate of 6sccm, adjusting NH according to the flow ratio R 3 Flow rate, 2.5 cycle redeposition of a-SiN on the active layer by PECVD method x /a-SiN y A film.
The deposition conditions were the same as 3-1.
3-4, fixation of SiH 4 The flow rate is 6sccm, and NH is adjusted according to the flow rate ratio R 3 Flow rate, a-SiN at 2.5 cycles x /a-SiN y Forming a-SiN on the thin film x An active layer.
The deposition conditions were the same as 3-2.
3-5, fixation of SiH 4 The flow rate is 6sccm, and NH is adjusted according to the flow rate ratio R 3 Flow, PECVD deposition of 5 cycles of a-SiN on a patterned substrate x /a-SiN y A film.
The deposition conditions were the same as 3-1.
Through the above procedures, a conformally grown photonic molecular film sample is completed.
Table 1: design parameters of an optical microcavity with a resonance center at 730nm, which is composed of a 5-period DBR + one active layer + 2.5-period DBR + one active layer + 5-period DBR. TABLE 1
| NH 3 /SiH 4 Flow ratio (R) | Refractive index (n) | Thickness of (nm) | Optical band gap (eV) | |
| λ/4 a-SiN x | 8 | 1.9 | 96 | 3.8 |
| λ/4 a-SiN y | 0.5 | 2.8 | 65 | 2.0 |
| λ/2 |
2 | 2.1 | 173 | 2.5 |
Claims (4)
1. The method for setting silicon-based photon molecules is characterized in that the photon molecules are prepared by growing a gas-phase conformal film, cylindrical platforms with the diameter size of 0.5-5 mu m and the height of 0.4-2 mu m are arranged on a glass substrate and a silicon substrate, and two or more active layers of a-SiN are prepared by the method for growing the conformal film z The three-dimensional confinement microcavity structure of (a): namely, a micro-cavity of a three-dimensional DBR limiting structure for forming two active layers; two DBRs are arranged at two sides of two active layers, the resonant wavelength is lambda, the DBR comprises 4 +/-10 periods of a-SiN of a medium-low refractive index layer and a high refractive index layer x And a-SiN y A thin film, each refractive layer having a thickness λ/(4 n); n is a refractive index, and the active layer is a-SiN having a refractive index between those of the low refractive index layer and the high refractive index layer z A thin film having a thickness of λ/(2 n); the distance between the two active layers is m periods, the thickness d = m × L of the DBR, m is 0.5-9.5, and L is the thickness of the high-low refractive index thin film in one period.
2. The method of claim 1, wherein the microcavity has a 730nm resonance center, and the microcavity comprises a 5-period DBR with an active layer and a 2.5-period DBR with an active layer and a 5-period DBR; the refractive index n of the low refractive index layer in the DBR is 1.9, the optical band gap Eg is 3.8eV, and the thickness is 96nm; the high refractive index n is 2.8, the eg is 2.0eV, and the thickness is 65nm; the active layer n was 2.1, the eg was 2.5eV, and the thickness was 173nm.
3. The method of claim 1, wherein the energy separation between the bonding state and the anti-bonding state of the photonic molecule is adjusted by designing different distances d between the two active layers, i.e. by changing the number m of DBR periods between the two active layers to adjust the coupling strength between the two active layers.
4. The preparation method for preparing photon molecules by growing a gas phase conformal film is characterized in that a cylindrical platform with the height of 0.4-2 mu m is manufactured on a glass or silicon substrate as a pattern substrate by photoetching and reactive ion etching; making a cylindrical platform with the transverse dimension of 0.5-5 mu m and the height of 0.4-2 mu m on a flat glass or polished silicon substrate by utilizing photoetching and reactive ion etching technologies on the template; periodically depositing prepared a-SiN provided with two active layers and limited in three dimensions on the patterned substrate by using a plasma enhanced chemical vapor deposition method x /a-SiN y A microcavity; then preparing two active layers of a-SiN by adopting a plasma enhanced chemical vapor deposition method for vapor conformal film growth z III of (2)Dimensionally confined a-SiN x /a-SiN y A microcavity.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102838080A (en) * | 2012-09-12 | 2012-12-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional photon limiting optical microcavity structure and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102838080A (en) * | 2012-09-12 | 2012-12-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional photon limiting optical microcavity structure and preparation method thereof |
| CN102838080B (en) * | 2012-09-12 | 2015-06-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional photon limiting optical microcavity structure and preparation method thereof |
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