CN102838080B - Three-dimensional photon limiting optical microcavity structure and preparation method thereof - Google Patents
Three-dimensional photon limiting optical microcavity structure and preparation method thereof Download PDFInfo
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- CN102838080B CN102838080B CN201210336171.2A CN201210336171A CN102838080B CN 102838080 B CN102838080 B CN 102838080B CN 201210336171 A CN201210336171 A CN 201210336171A CN 102838080 B CN102838080 B CN 102838080B
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Abstract
The invention relates to the field of semiconductor photonelectron optics, and provides a three-dimensional photon limiting optical microcavity structure and a preparation method of the three-dimensional photo limiting optical microcavity structure. The preparation method specifically comprises the steps as follows: providing a silicon substrate; preparing a concave pit structure at micron level on the silicon substrate through a photoetching and etching technology; depositing a concave Bragg reflector membrane on the concave pit of the silicon substrate; providing an optical fiber end surface for carrying out optical excitation and optical probing; and positioning the optical fiber end surface above the concave Bragg reflector membrane, so as to form a three-dimensional photon limiting optical microcavity structure that is formed via the concave Bragg reflector membrane and the optical fiber end surface. Through the adoption of the three-dimensional photon limiting optical microcavity structure prepared by such method, measurement and analysis can be conveniently carried out, and the precision in detecting is high, so as to be worthy to be widely applied.
Description
Technical field
The present invention relates to semi-conductor photoelectronic information and micro-cavity quantum optics, particularly relate to a kind of three-dimensional photon restriction optical microcavity structure and preparation method thereof.
Background technology
Optical microcavity is a kind of optically resonant structure be limited in by photon in optical wavelength yardstick.Common optical microcavity structure includes Fabry Perot microcavity, micro-dish microcavity, microballoon microcavity and micro-ring microcavity based on whisper gallery mode and photonic crystal or photon band gap microcavity etc.In recent years, optical microcavity comprising that photon and communication device, Eurytrema coelomatium and quantum optices, nonlinear optics and chaos system dynamics, biological medicine detect, the field such as micromechanics and opto-mechanical achieves considerable progress.
From the developing history of optical microcavity, whenever a kind of novel high-quality optical microcavity structure occurs, the research of a series of related physical and device all can be evoked.Meanwhile, according to Purcell effect, high-quality-factor and small mode volume are the key parameters of optical microcavity regulation and control atomic reorganization speed, are also the targets that optical microcavity design is pursued.In theory, three-dimensional photon restriction optical microcavity, can take into account these targets.But from existing research, although microballoon microcavity can realize three-dimensional photon restriction, its not easily with integrated chip, and mode volume is larger.
The preparation method of the silicon based photon micro-cavity structure in correlation technique comprises: deposit one dimensional microcavity structure (comprising upper and lower two Bragg reflectors and middle defect layer) in the graph substrate of the projection prepared, due to the effect of conformal growth, form the effect to the restriction of defect layer in microcavity (or active layer) three-dimensional.But, in actual application, especially in the process of biochemistry sensory field application, and be not easy to modify sample on body structure surface, and measure; Simultaneously because light field is limited in its center by this structure, not on its surface, cause its testing result inaccuracy, DeGrain.
Therefore, be necessary that proposing a kind of new three-dimensional photon restriction optical microcavity structure and preparation method thereof solves the problems referred to above.
Summary of the invention
The invention provides one to be convenient for measuring and to analyze, accuracy of detection is high, three-dimensional photon restriction optical microcavity structure with extensive use value and preparation method thereof.
The present invention adopts following technical scheme:
A kind of three-dimensional photon restriction optical microcavity structure, it comprises: be provided with the silicon substrate of pit, in pit conformal growth silica-based spill Bragg reflector film and be placed in above described spill Bragg reflector film, in order to carry out the fiber end face of optical excitation and optical tests.
A preparation method for three-dimensional photon restriction optical microcavity structure, its method comprises: provide silicon substrate, prepares micron-sized bowl configurations on a silicon substrate; The pit of described silicon substrate deposits Bragg reflector film; The fiber end face carrying out optical excitation and optical detection is provided, described fiber end face is placed in the top of Bragg reflector film.
Preferably, described pit is provided with bottom and sidewall, and after the pit of described silicon substrate deposits Bragg reflector film, bottom and the sidewall of described pit all form Bragg reflector structure.
Preferably, described fiber end face is vertically placed in directly over Bragg reflector film, and seals up the opening of described pit.
Preferably, described fiber end face also comprises before being placed in the top of Bragg reflector film, by fiber end face right angle cuts and polishing.
Preferably, the lateral dimension of the pit that described silicon substrate etches is 1 μm ~ 1000 μm, and longitudinal size is 1nm ~ 200 μm.
Preferably, the thickness growing Bragg reflector film in described pit is λ × n
m/ 4, wherein, λ is the centre wavelength of three-dimensional photon restriction optical microcavity structure, n
mfor film is in the refractive index at this wavelength place.
Preferably, Bragg reflector film is made up of the different the first film of two kinds of refractive indexes and the second film alternating deposition, and the material of described the first film is silica, and the material of described second film is silicon nitride.
Preferably, Bragg reflector film is made up of the different the first film of two kinds of refractive indexes and the second film alternating deposition, and described film adopts silica material and makes, and oxygen content and the silicone content of the oxygen content of the first film and silicone content and the second film are different.
Preferably, Bragg reflector film is made up of the different the first film of two kinds of refractive indexes and the second film alternating deposition, and described film adopts silicon nitride material and makes, and nitrogen content and the silicone content of the nitrogen content of the first film and silicone content and the second film are different.
To the invention has the advantages that: the present invention prepares concave pit shape structure on substrate, and deposit Bragg reflector multi-layer film structure thereon, in conjunction with measuring fiber end face, formed in concave structure inject three dimensions restriction and the light field restriction of sample.Several samples can be introduced easily in this structure, there is adaptability widely, in conjunction with optical fiber measurement technology, sample spectra can be realized very easily and measure, realize Qualitative and quantitative analysis.In semi-conductor photoelectronic information, bio-sensing detects and micro-cavity quantum optical field all has a wide range of applications.Due to integral device structure preparation process and microelectronics CMOS technology compatibility, this element manufacturing cost is lower, is easy to industrialization.
Accompanying drawing explanation
Fig. 1 is the generalized section of three-dimensional photon of the present invention restriction optical microcavity structure preferred embodiment;
Fig. 2 (a)-(f) is the step schematic diagram of the preferred embodiment of the preparation method of three-dimensional photon restriction optical microcavity structure of the present invention.
Detailed description of the invention
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, for the profile of the preferred embodiment of three-dimensional photon restriction optical microcavity structure of the present invention, three-dimensional photon restriction optical microcavity structure 10 comprises the silicon substrate 11 being provided with pit 110, in pit 110, deposit silica-based spill Bragg reflector film 12 and be placed in above described spill Bragg reflector film 12, in order to carry out the fiber end face 13 of optical excitation and optical tests, wherein, the material alternating deposition that Bragg reflector film 12 is different by the first film 121 and the second film 122 two kinds of refractive indexes and forming.Preferably, described the first film 121 is made up of silica, and the second film 122 is made up of silicon nitride.Certainly, the first film 121 and the second film 122 also can all adopt silica to make, and namely regulate oxygen content and the silicone content of silica in two kinds of films, make the oxygen content of the first film 121 and silicone content be different from oxygen content and the silicone content of the second film 122; In like manner, the first film 121 and the second film 122 also can all adopt silicon nitride to make, and method is identical with silica.Like this, just can ensure that the first film 121 is different with the refractive index of the second film 122, thus in pit 110 alternating deposit and form required Bragg reflector film 12.
As shown in Figure 2, be the step schematic diagram of the preferred embodiment of three-dimensional photon restriction optical microcavity structure preparation method of the present invention, the method comprises the steps:
Step 001: with reference to Fig. 2 (a) to Fig. 2 (d), silicon substrate 11 is provided, at the two ends of silicon substrate 11, mask 102 is set, to position photoetching technique and the etching technics of not establishing mask 102, etch micron-sized pit 110, wherein, silicon substrate 11 is provided with upper surface 103 and the lower surface 104 relative with upper surface 103, described pit 110 forms to lower surface 104 extension from upper surface 103, and it comprises the sidewall 105 be connected with upper surface 103 and the bottom 106 be connected with sidewall 105, in the present embodiment, etching technics dry etching, certainly, also wet etching can be adopted,
Step 002: with reference to Fig. 2 (e), the pit 110 of silicon substrate 11 utilize the process deposits of thin-film deposition go out silica-based spill Bragg reflector film 12, the range of deposition of this Bragg reflector film 12 comprises the upper surface 103 of silicon substrate 11, the sidewall 105 of pit 110 and bottom 106, and Bragg reflector film 12 is made up of the different material alternating deposition of two kinds of refractive indexes, during detection, article to be measured need be put into Bragg reflector film 12;
Step 003: with reference to Fig. 2 (f), the fiber end face 13 carrying out optical excitation and optical detection is provided, right angle cuts and polishing are carried out to this fiber end face 13, the upper surface 103 of fiber end face 13 near silicon substrate 11 is moved, and be vertically placed in directly over spill Bragg reflector film, to seal the opening of pit 110, finally can form the three-dimensional photon that spill Bragg reflector film and fiber end face form jointly and limit optical microcavity structure.In this step, fiber cut, completes by optical fiber cutter, and end face polishing available fiber polishing film completes.
In the present embodiment, the lateral dimension of the pit that described silicon substrate etches is 1 μm ~ 1000 μm, and longitudinal size is 1nm ~ 200 μm.The thickness growing Bragg reflector film in pit is λ × n
m/ 4, wherein, λ is the centre wavelength of three-dimensional photon restriction optical microcavity structure, n
mfor film is in the refractive index at this wavelength place.
Preferably, the photoetching technique in step 001 is completed by ultraviolet photolithographic machine, and etching condition is: photoetching pattern: Hard pattern; Time for exposure: 4.5 seconds to 7 seconds; Developing time: 30 seconds to 50 seconds.
Preferably, in step 001, the condition of dry etching is: etching source of the gas comprises: SF
6, O
2,, C
4f
8its flow is respectively: 20sccm to 30sccm, 20sccm to 50sccm, 20sccm to 50sccm; Etching power is 400W to 1000W; Radio-frequency power is 40W to 70W; Reaction chamber pressure is 4 mTorr to 10 mTorr(millitorrs); Etch period is 4 minutes to 10 minutes.After etching, have children outside the state plan 5 clocks with acetone, isopropyl acetone and divide to 10 minutes removal mask material photoresists.According to wet-etching technology, then can apply hydrofluoric acid, nitric acid and the mixed liquor of the two, or potassium hydroxide solution etc.
Preferably, the thin-film deposition of step 002 can realize by strengthening plasma activated chemical vapour deposition (PECVD) technology or low-pressure chemical vapor deposition (LPCVD) technology or the method such as electron beam evaporation or sputtering.For the pecvd process of silicon oxide deposition film, film growth condition is as follows: power source frequency is 13.56MHz, and substrate temperature is 350 DEG C, and operating air pressure is 2000mTorr; Source of the gas is: SiH
4, N
2o, Ar; By the refractive index and the thickness that regulate the ratio between different source of the gas, deposition pressure, sedimentation time can regulate film.By alternating deposit height low-refraction in the pit of step 001 gained and light path is the silica-base film of 1/4 design wavelength, Bragg reflector structure can be obtained.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a three-dimensional photon restriction optical microcavity structure, it is characterized in that, this structure comprises: be provided with the silicon substrate of pit, in pit conformal growth silica-based spill Bragg reflector film and to be placed in above described spill Bragg reflector film and fiber end face in order to carry out optical excitation and optical tests, described fiber end face is vertically placed in directly over Bragg reflector film, and seals up the opening of described pit.
2. a preparation method for three-dimensional photon restriction optical microcavity structure, is characterized in that: the method comprises: provide silicon substrate, prepares micron-sized bowl configurations on a silicon substrate; The pit of described silicon substrate deposits Bragg reflector film; The fiber end face carrying out optical excitation and optical detection is provided, described fiber end face is vertically placed in directly over Bragg reflector film, and seal up the opening of described pit.
3. the preparation method of three-dimensional photon restriction optical microcavity structure according to claim 2, it is characterized in that, described pit is provided with bottom and sidewall, and after the pit of described silicon substrate deposits Bragg reflector film, bottom and the sidewall of described pit all form Bragg reflector structure.
4. the preparation method of three-dimensional photon restriction optical microcavity structure according to claim 2, described fiber end face also comprises before being placed in the top of Bragg reflector film, by fiber end face right angle cuts and polishing.
5. the preparation method of three-dimensional photon restriction optical microcavity structure according to claim 2, it is characterized in that, the lateral dimension of the pit that described silicon substrate etches is 1 μm ~ 1000 μm, and longitudinal size is 1nm ~ 200 μm.
6. the preparation method of three-dimensional photon restriction optical microcavity structure according to claim 2, it is characterized in that, the thickness growing Bragg reflector film in described pit is λ × n
m/ 4, wherein, λ is the centre wavelength of three-dimensional photon restriction optical microcavity structure, n
mfor film is in the refractive index at this wavelength place.
7. the preparation method of three-dimensional photon restriction optical microcavity structure according to claim 2, it is characterized in that, Bragg reflector film is made up of the different the first film of two kinds of refractive indexes and the second film alternating deposition, the material of described the first film is silica, and the material of described second film is silicon nitride.
8. the preparation method of three-dimensional photon restriction optical microcavity structure according to claim 2, Bragg reflector film is made up of the different the first film of two kinds of refractive indexes and the second film alternating deposition, described film adopts silica material and makes, and oxygen content and the silicone content of the oxygen content of the first film and silicone content and the second film are different.
9. the preparation method of three-dimensional photon restriction optical microcavity structure according to claim 2, Bragg reflector film is made up of the different the first film of two kinds of refractive indexes and the second film alternating deposition, described film adopts silicon nitride material and makes, and nitrogen content and the silicone content of the nitrogen content of the first film and silicone content and the second film are different.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6266357B1 (en) * | 1998-09-01 | 2001-07-24 | The United States Of America As Represented By The Secretary Of The Air Force | Microcavity surface emitting laser |
| US6661031B2 (en) * | 2001-03-21 | 2003-12-09 | Kabushiki Kaisha Toshiba | Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode |
| CN101030695A (en) * | 2007-04-05 | 2007-09-05 | 南京大学 | Method for producing photo quantum-point by gas-phase conformal thin-film growth |
| CN101114102A (en) * | 2007-07-13 | 2008-01-30 | 南京大学 | Method for setting and producing silicon based photon molecule |
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| JP3225103B2 (en) * | 1992-08-24 | 2001-11-05 | 沖電気工業株式会社 | Light-emitting / light-receiving element and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6266357B1 (en) * | 1998-09-01 | 2001-07-24 | The United States Of America As Represented By The Secretary Of The Air Force | Microcavity surface emitting laser |
| US6661031B2 (en) * | 2001-03-21 | 2003-12-09 | Kabushiki Kaisha Toshiba | Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode |
| CN101030695A (en) * | 2007-04-05 | 2007-09-05 | 南京大学 | Method for producing photo quantum-point by gas-phase conformal thin-film growth |
| CN101114102A (en) * | 2007-07-13 | 2008-01-30 | 南京大学 | Method for setting and producing silicon based photon molecule |
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