CN101030695A - Method for producing photo quantum-point by gas-phase conformal thin-film growth - Google Patents
Method for producing photo quantum-point by gas-phase conformal thin-film growth Download PDFInfo
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Abstract
The invention is concerned with the on quantum point that growth prepares by the gas-phase sharing-shape thin film, it is: sets a column platform on the glass and the silicon substrate with 0.5-5 mu m landscape orientation size and the 0.4-2 mu m height; sets the micro-cavity that the a-SiNz is the gas-phase sharing-shape thin film growth preparation active layer and limits three-dimensionally by the DBR; sets two DBR located at both sides of the active layer, the resonance wave length of the micro-cavity is lambda, the DBR includes low refractive index layer with 6+-2 periods and a-SiNx/a-SiNy thin film with high refractive index layer, the thickness of each refractive index layer islambda/(4n); n is the refractive index, the active layer is the a-SiNx thin film that the refractive index is between the low refractive index layer and the high refractive index layer, the thickness islambda/(2n).
Description
One, technical field:
The present invention relates to the method for producing photo quantum-point by gas-phase conformal thin-film growth, especially utilize the conformal thin-film growing technology to prepare the new method of the silica-based optical microcavity of the three-dimensional restriction of distributed Blatt reflective (DBR).The size that this new method makes microcavity is not only vertically but also can be laterally suitable with the luminous element wavelength, this structure formation photo quantum-point.The side Bragg reflecting layer that is formed by conformal growth substitutes the side air boundary reflection face that is formed by conventional etching method, has significantly improved the efficient of the horizontal restriction of photon of microcavity, has realized the three-dimensional restriction of photon.
Two, background technology:
Optical microcavity is a kind of optical microstructures that harmonic light is limited in the little space (optical wavelength magnitude) of a submicron-scale.According to the Purcell effect, optical microcavity structure can greatly improve the efficient and the photoemissive quality factor of luminescent material spontaneous radiation, thereby all has very high application prospect and potential researching value in fields such as laser development and light and matter interaction researchs.
Along with Yablonovitch ([1] E.Yablonovitch, Phys.Rev.Lett.58,2059 (1987)) notion of photonic crystal and the progressively maturation of modern microelectronic manufacturing technology are proposed, people organically combine photonic crystal notion and optical microcavity notion, developed the photonic semiconductor crystal micro-cavity laser of the ultrahigh quality factor, low threshold value even zero threshold value, the laser that wherein utilizes the III-V group iii v compound semiconductor material to make has been invested market.For the needs of research and development semiconductor surface emitting laser, people have also begun the making and the research of microtrabeculae microcavity.On the other hand, the maturation of and experiment theoretical and perfect along with quantum optices in recent years, people recognize and can utilize optical microcavity that the regulating and controlling effect of single quantum dot ballistic phonon is more effectively realized the single-photon source device architecture, and this all has wide potential application foreground at the other field based on quantum calculation, quantum cryptology and the quantum information of linear optics.In this case, the optical microcavity of the three-dimensional restriction of preparation not only can further improve radiation efficiency so that the microcavity volume further dwindles; Also can reach simultaneously the purpose of the single quantum dot of restriction effectively, lay the first stone for making single-photon source.
2002, ([2] C.Santori of the Yamamoto group of Stanford Univ USA, D.Fattal, J.Vuckovic, G.S.Solomon, and Y.Yamamoto, Nature 419,594 (2002)) take the lead in having realized single-photon source, embodied good single photon characteristic based on the microtrabeculae micro-cavity structure of III-V family semi-conducting material.Because its manufacturing process is that the method by etching forms microtrabeculae structure (referring to Fig. 1) from top to bottom on one dimension distributed Bragg reflector (DBR) microcavity for preparing, it is smooth to make that its sidewall can not guarantee, thereby makes the quality factor of this structure be subjected to the sidewall restriction and can't improve; Simultaneously, because this structure is that total reflection realizes for the horizontal restriction of light, so this structure also is not three-dimensional light restriction truly.
Silicon materials occupy the dominant position of modern microelectronics industry, realize that in silicon materials the gain of light and even laser are that microelectronic industry is paid close attention to always.From the silicon laser that utilizes the Raman effect of Intel Company research and development to Brown University the SOI sheet introduce the A central defect observed swash penetrate behavior, many laboratories, the whole world are all in the research of being devoted to silica-based light source and laser.Because the remarkable effect of DBR microcavity aspect shortening radiation lifetime (promptly improving luminous efficiency), this structure also has been used in the silicon-based semiconductor luminescent device.The silica-based microcavity of one peacekeeping two dimension is realized in many laboratories, and report does not show the silica-based optical microcavity of having realized three-dimensional DBR restriction truly.
Three, summary of the invention:
The objective of the invention is: propose the three-dimensional restriction that a kind of new approaches realize photon in the microcavity, i.e. the method for producing photo quantum-point by gas-phase conformal thin-film growth; Utilize the conformal thin-film growing technology to prepare the new method of the silica-based optical microcavity of the three-dimensional restriction of distributed Blatt reflective (DBR).The size that this new method makes microcavity is not only vertically but also can be laterally suitable with the luminous element wavelength, this structure formation photo quantum-point.On the light launching effect, realized the eigenmodes cleavage effect of photo quantum-point, realized depending on significantly the light modulation effect of microcavity size.The present invention also aims to: thus the stock of the silica-based optical microcavity Bragg reflector of described formation form by two kinds of different amorphous silicon nitride films of different component refractive index, active layer is also selected amorphous silicon nitride films for use.
The present invention also aims to: material preparation method is for utilizing the periodically silicon nitride film of conformal growth components difference, controllable thickness of plasma chemical vapor deposition (PECVD) technology on graph substrate.The side Bragg reflection that is formed by conformal growth substitutes the air interface reflections face that is formed by conventional etching method, improves the efficient of the horizontal restriction of photon of microcavity, has realized the three-dimensional restriction of photon.
Technical scheme of the present invention is: the photo quantum-point of gas-phase conformal film growth preparation, and be provided with at glass and silicon substrate and be of a size of 0.5-5 μ m, highly (see Fig. 2 a) for the cylindricality platform of 0.4-2 μ m.And be a-SiN with conformal thin-film growing and preparing active layer
zBe subjected to a-SiN
x/ a-SiN
yThe microcavity (seeing Fig. 2 b) of the three-dimensional restriction of DBR: the microcavity that promptly forms the three-dimensional limiting structure of DBR; Be provided with two DBR and be positioned at the active layer both sides, the resonance wavelength of microcavity is λ, and DBR comprises the low-index layer in 4 ± 10 cycles and the a-SiN of high refracting layer
x/ a-SiN
yFilm, each refracting layer thickness are λ/(4n); N is a refractive index, and active layer is refractive index a-SiN between the refractive index of low-index layer and high refracting layer
zFilm, thickness are λ/(2n).
The resonance wavelength of described microcavity is tuned to 730nm, and one deck active layer constitutes in the middle of being added by 6 cycle DBR of two symmetries; The refractive index n of low-index layer is 1.9 among the DBR, and optical band gap Eg is 3.8eV, and thickness is λ/(4n); High index of refraction n is 2.8, and Eg is 2.0eV, and thickness is λ/(4n); Active layer n is 2.1, and Eg is 2.5eV, and thickness is λ/(2n).
The preparation method of producing photo quantum-point by gas-phase conformal thin-film growth, making on glass and silicon substrate with masterplate and photoetching and reactive ion etching (RIE) earlier highly is that the cylindricality platform of 0.4-2 μ m is as graph substrate; Utilizing the conformal growing and preparing active layer of method of plasma enhanced CVD (PECVD) on described graph substrate is a-SiN
zBe subjected to a-SiN
x/ a-SiN
yThe microcavity of the three-dimensional restriction of DBR; Be provided with two DBR and be positioned at the active layer both sides, the resonance wavelength of microcavity is λ, and DBR comprises the low-index layer in 6 ± 2 cycles and the a-SiN of high refracting layer
xFilm, each refracting layer thickness are λ/(4n); N is a refractive index, and active layer is refractive index a-SiN between the refractive index of low-index layer and high refracting layer
zFilm, thickness are λ/(2n).The size that this conformal growing method makes microcavity is not only vertically but also laterally suitable with the luminous element wavelength, this structure formation photo quantum-point.
Utilize masterplate and the photoetching and reactive ion etching (RIE) technology of particular design, making lateral dimension on plate glass or polished silicon substrate is 0.5-5 μ m, highly (sees Fig. 2 a) for the cylindricality platform of 0.4-2 μ m.To prepare active layer be a-SiN to the film growth of using plasma chemical gas-phase deposition enhanced (PECVD) method gas-phase conformal then
2Be subjected to a-SiN
x/ a-SiN
yThe microcavity (seeing Fig. 2 b) of the three-dimensional restriction of DBR.
1. utilize photoetching and reactive ion etching (RIE) technology, making lateral dimension on glass and silicon substrate is 0.5-5 μ m, highly is the cylindricality platform of 0.4-2 μ m.
A) masterplate design: utilize microelectronics planar technique plate-making technology to prepare the photoetching masterplate, figure is square (length of side 0.5-5 μ m) or circular (diameter 0.5-5 μ m).
B) figure transfer I: utilize microelectronics planar technique photoetching technique with the masterplate figure transfer on the Cr and Al film that are coated on respectively on glass or the silicon substrate.
Corrosion Cr mask etch formula of liquid: Ce (NO
3)
42NH
4NO
3: HClO
4: H
2O=100g: 25ml: 650ml.Corrosion temperature is a room temperature.
Corrosion Al mask etch formula of liquid: dense H
3PO
4In right amount.Corrosion temperature is 80 ℃.
C) figure transfer II: utilize figure transfer on reactive ion etching (RIE) the technology photoresist on glass or silicon substrate, forming lateral dimension is 0.5-5 μ m, highly is the cylindricality platform of 0.4-2 μ m.
The actual conditions of RIE is as follows:
Etching source of the gas and flow: CHF
330sccm; O
2, 5sccm
The power source frequency is: 13.56MHz; Power is: 300W
Reaction chamber pressure: 4.0Pa; After RIE finishes, Cr and Al film mask on the erosion removal cylindricality platform.
2. using plasma chemical gas-phase deposition enhanced (PECVD) method prepares the amorphous silicon nitride microcavity.
By conformal growth microcavity process, on the cylindricality platform of the substrate of making, form three-dimensional restriction to the DBR of active layer.The resonance wavelength of design microcavity is λ, and two DBR are positioned at the active layer both sides.The refractive index n of low-index layer is 1.9 among the DBR, and optical band gap Eg is 3.8eV, and thickness is λ/(4n); High index of refraction n is 2.8, and Eg is 2.0eV, and thickness is λ/(4n); Active layer n is 2.1, and Eg is 2.5eV, and thickness is λ/(2n).By control NH
3And SiH
4Two kinds of gas flow ratio (R=[NH
3]/[SiH
4]) realize the component control of film.Thereby reach the n value and the Eg value of designing requirement.Above-mentioned three kinds of situations are selected R=8 ± 2,0.5 ± 0.2,2 ± 0.5 respectively for use.Fixing SiH
4Flow is 6sccm, regulates NH according to flow-rate ratio R
3Flow.
The concrete process conditions of film growth are as follows among the PECVD:
Power source frequency: 13.56MHz; Power density: 0.6W/cm
2
Reaction chamber pressure: 40Pa; Underlayer temperature: 250 ℃
Fig. 3 (a) is cross section transmission electron microscopy mirror (TEM) photo of conformal growth microcavity on graph substrate; Fig. 3 (b) and (c) be lateral dimension 2 μ m and 1 μ m, highly be scanning electron microscopy (SEM) photo of the photo quantum-point of conformal growth on the 600nm microtrabeculae.
The principle of the invention: inventive principle is to substitute the horizontal air interface reflections face that is formed by conventional etching method by the side Bragg reflecting layer that conformal growth forms, and has significantly improved the efficient of the photon side restriction of microcavity, has realized the three-dimensional restriction of photon.When the size of microcavity is suitable with the luminous element wavelength, constitute photo quantum-point.The lateral dimension of microcavity is determined by the size of substrate figure.The defective that this had both been avoided etching to introduce in preparation process can be simplified whole making flow process again.By photoluminescence (PL) test shows, the emission spectra of the photo quantum-point that this method is prepared has significant laterally restriction effect, further dwindles the lateral dimension of microcavity, can reach the single mode emission.
On the mode confinement effect of three-dimensional restriction microcavity, according to the photo quantum-point theory, its pattern eigenvalue has tangible size dependence, can analogy on this point with respect to the feature of the quantum dot of electronics.
The eigenvalue theoretical calculation formula of pattern is as follows:
E
PhPhoton energy eigenvalue for light quanta point; k
0=2 π n/ λ
0Represent vertical wave vector component of microcavity; k
xAnd k
yBe the horizontal wave vector component relevant with the microcavity size:
m
X, y=0,1,2,3 ... represent the transversal vector subnumber in the microcavity numerical model; L represents the lateral dimension of microcavity.Peak energy (M from the room temperature PL spectrum of the photo quantum-point of the different lateral dimensions of Fig. 4
000, M
010, M
011) and the light quanta point pattern eigenvalue of Fig. 5 with the change curve of lateral dimension, room temperature PL peak value (point) and calculated value (solid line) comparison diagram, can see that we have tangible photo quantum-point feature with the silica-based optical microcavity of the three-dimensional restriction of the distributed Blatt reflective (DBR) of conformal growing method preparation, this makes it have possibility of its application in the quantum information field.Along with dwindling of size, model number will further reduce, and be expected to realize the single-mode optics emission of silica-based microcavity.
Technological merit of the present invention: from bottom to top the preparation method of the conformal growth amorphous silicon nitride of using plasma chemical gas-phase deposition enhanced (PECVD) method photo quantum-point has following advantage on graph substrate:
1. three-dimensional DBR light restriction: conformal growing method forms and limits for the DBR light on the active layer all directions.For the microcavity sidewall air interface reflections of lithographic method preparation from top to bottom, side DBR has higher reflectivity, thereby can realize stronger photon restriction.
2. the photo quantum-point feature that relies on of size: when the lateral dimension of microcavity is suitable with the luminous element wavelength, constitute photo quantum-point.The photo quantum-point feature that size relies on makes this structure in the development of silica-based single-mode laser with to be applied to the research of silica-based single-photon source in quantum information field all significant.
3. avoid introducing in the technical process probability of defective: for the microcavity of lithographic method preparation from top to bottom,, can reduce the formation that weakens luminous dangling bonds, thereby guarantee the quality of microcavity owing to reduced etching process.
4. operation is simple, is convenient to large-scale production: because its method is simple, operation is few, in case large-scale industrial production will be saved cost greatly, and the repeatability of product is high.
5. in using, the interconnected and full optical interconnection of silica-based monolithic electric light all plays an important role.For the silica-based single-mode laser of further development and study significant that silica-based single-photon source uses in the quantum information field.
The present invention does not adopt the top-down method of having reported to prepare the microtrabeculae microcavity, but on from bottom to top the graphics template of using plasma chemical gas-phase deposition enhanced (PECVD) method on the graph substrate in particular production conformal preparation amorphous silicon nitride microcavity.Owing to there is not the effect of stress in the amorphous material, prepared microcavity can form the light restriction of distributed Bragg reflector (DBR) by the conformal growth course that depends on graph substrate at the above-below direction of active layer, also there is DBR to limit at horizontal direction to light, thereby realize three-dimensional light restriction truly, referring to Fig. 2.The three-dimensional microcavity of this method preparation also can be described as photo quantum-point.The lateral dimension of microcavity is determined by the size of substrate figure.The defective that this had both been avoided etching to introduce in preparation process can be simplified whole making flow process again.By photoluminescence (PL) test shows, the emission spectra of the microcavity that this method is prepared has significant laterally restriction effect, further dwindles the lateral dimension of microcavity, can reach the single mode emission.This lays a solid foundation in quantum information field possibility of its application for developing silica-based single-mode laser and studying silica-based single-photon source.
Four, description of drawings:
Fig. 1: the microtrabeculae microcavity schematic diagram that adopts lithographic method to form from top to bottom.
Fig. 2: the generalized section of the present invention's conformal growth photo quantum-point on graph substrate.Fig. 2 (a) is carved with the graph substrate of cylindricality platform; Fig. 2 (b) uses the conformal growing optics microcavity of PECVD method membrane structure on graph substrate.
Cross section transmission electron microscopy mirror (TEM) photo of Fig. 3: Fig. 3 among the present invention (a) gas-phase conformal growth microcavity on graph substrate; At lateral dimension is that the height of 2 μ m (Fig. 3 (b)) and 1 μ m (Fig. 3 (c)) is scanning electron microscopy (SEM) photo of the microcavity of conformal growth on the 600nm microtrabeculae.
Fig. 4: light at room temperature photoluminescence (PL) spectrum of the photo quantum-point of the different lateral dimensions of the present invention.
Fig. 5: light quanta point pattern eigenvalue is with the change curve of lateral dimension, room temperature PL peak value (point) and calculated value (solid line) comparison diagram.
Five, embodiment:
Utilize masterplate and the photoetching and reactive ion etching (RIE) technology of particular design, making lateral dimension on the plate glass substrate is 2 μ m, highly is that the cylindricality platform of 1 μ m (is seen Fig. 2 a).The film growth of using plasma chemical gas-phase deposition enhanced (PECVD) method gas-phase conformal prepares the amorphous silicon nitride optical photons quantum dot (seeing Fig. 2 b) of three-dimensional restriction then.
1. utilize photoetching and reactive ion etching (RIE) technology, making lateral dimension on glass substrate is 2 μ m, highly is the cylindricality platform of 1 μ m.
A) masterplate design: utilize microelectronics planar technique plate-making technology to prepare the photoetching masterplate, figure is that the length of side is 2 μ m squares.
B) figure transfer I: utilize microelectronics planar technique photoetching technique with the masterplate figure transfer to the Cr film that is coated on the glass substrate.
Cr mask etch formula of liquid: Ce (NO
3)
42NH
4NO
3: HClO
4: H
2O=100g: 25ml: 650ml.Corrosion temperature is a room temperature.
C) figure transfer II: it is on glass to utilize reactive ion etching (RIE) technology that the figure transfer on the Cr film is arrived, and forming lateral dimension is 2 μ m, highly is the cylindricality platform of 1 μ m.
The actual conditions of RIE is as follows:
Etching source of the gas and flow: CHF
330sccm O
25sccm
Power source frequency: 13.56MHz power: 300W
Reaction chamber pressure: 4.0Pa
After RIE finishes, the Cr film mask of erosion removal on the cylindricality platform.Corrosion liquid formula is the same.
2. micro-cavity structure design
The resonance wavelength of design microcavity is 730nm, and one deck active layer constitutes in the middle of being added by 6 cycle DBR of two symmetries.
Low-refraction a-SiN among the DBR
xLayer R=8, refractive index is 1.9, and optical band gap is 3.8eV, and thickness is 96nm; High index of refraction a-SiN among the DBR
yLayer R=0.5, refractive index is 2.8, and optical band gap is 2.0eV, and thickness is 65nm.Low-refraction a-SiN
xLayer and high index of refraction a-SiN
yLayer alternating growth 6 times.
Active layer a-SiN
zLayer R=2, refractive index is 2.1, and optical band gap is 2.5eV, and thickness is 173nm.
Resonance wavelength is as shown in table 1 at the design parameter of the optical microcavity that two the 6 cycle DBR by with active layer and symmetry of 730nm constitute.
3. 6 cycle of deposit optical microcavity on graph substrate.
3-1, fixing SiH
4Flow is 6sccm, regulates NH according to flow-rate ratio R
3Flow, the a-SiN in 6 cycles of PECVD method deposit on graph substrate
x/ a-SiN
yFilm.
(a) a-SiN of growth R=8
xLayer, NH
3Flow is 48sccm, and growth time is 9 ' 40 ", thickness is 96nm;
(b) a-SiN of growth R=0.5
yLayer, NH
3Flow is 3sccm, and growth time is 6 ' 28 ", thickness is 65nm;
Repeat the (a) and (b) process, the DBR in 6 cycles of growing altogether.
The concrete process conditions of film growth are as follows among the PECVD:
Power source frequency: 13.56MHz
Power density: 0.6W/cm
2
Reaction chamber pressure: 40Pa
Underlayer temperature: 250 ℃
3-2, fixing SiH
4Flow is 6sccm, regulates NH according to flow-rate ratio R
3Flow is at the a-SiN in 6 cycles
x/ a-SiN
yForm a-SiN on the film
xActive layer.
The a-SiN of PECVD method growth R=2
xActive layer, NH
3Flow is 12sccm, and growth time is 16 ' 50 ", thickness is 173nm.
The concrete process conditions of PECVD method film growth are as follows:
Power source frequency: 13.56MHz; Power density: 0.6W/cm
2
Reaction chamber pressure: 40Pa; Underlayer temperature: 250 ℃
3-3, fixing SiH
4Flow is 6sccm, regulates NH according to flow-rate ratio R
3Flow, the PECVD method a-SiN in 6 cycles of deposit again on active layer
x/ a-SiN
yFilm.The same 3-1 of deposition conditions.
We have finished the photo quantum-point film sample of conformal growth by above operation, and its pattern is as Fig. 3 (a) (b) shown in (c); The PL measurement result of photo quantum-point sample eigenvalue and theoretical value are shown in Fig. 4,5.
Referring to table 1: the design parameter of the optical microcavity that resonance wavelength constitutes at two the 6 cycle DBR by with active layer and symmetry of 730nm.
Table 1
| NH 3/SiH 4Flow-rate ratio (R) | Refractive index (n) | Thickness (nm) | Optical band gap (eV) | |
| λ/4 a-SiH x | 8 | 1.9 | 96 | 3.8 |
| λ/4 a-SiH y | 0.5 | 2.8 | 65 | 2.0 |
| λ/2 | 2 | 2.1 | 173 | 2.5 |
Claims (5)
1, the photo quantum-point of gas-phase conformal film growth preparation is characterized in that being provided with lateral dimension earlier at glass and silicon substrate is 0.5-5 μ m, highly is the cylindricality platform of 0.4-2 μ m; Being provided with conformal thin-film growing and preparing active layer thereon is a-SiN
zBe subjected to the three-dimensional restriction of DBR microcavity; Wherein be provided with two DBR and be positioned at the active layer both sides, the resonance wavelength of microcavity is λ, and DBR comprises the low-index layer in 6 ± 2 cycles and the a-SiN of high refracting layer
x/ a-SiN
yFilm, each refracting layer thickness are λ/(4n); N is a refractive index, and active layer is refractive index a-SiN between low-index layer and high refractive index layer
xFilm, thickness are λ/(2n).
2, the photo quantum-point of gas-phase conformal film growth according to claim 1 preparation is characterized in that the resonance wavelength 730nm of described microcavity, and one deck active layer constitutes in the middle of being added by 6 cycle DBR of two symmetries; The refractive index n of low-index layer is 1.9 among the DBR, and optical band gap Eg is 3.8eV, and thickness is λ/(4n); High index of refraction n is 2.8, and Eg is 2.0eV, and thickness is λ/(4n); Active layer n is 2.1, and Eg is 2.5eV, and thickness is λ/(2n).
3, the preparation method of producing photo quantum-point by gas-phase conformal thin-film growth, it is characterized in that earlier making lateral dimension with masterplate and photoetching and reactive ion etching RIE on glass and silicon substrate is 0.5-5 μ m, the cylindricality platform that highly is 0.4-2 μ m is as graph substrate; On described graph substrate, utilize the conformal growing and preparing active layer of method of plasma enhanced CVD to be a-SiN
zBe subjected to a-SiN
xThe microcavity of the three-dimensional restriction of/a-SiNyDBR; Be provided with two DBR and be positioned at the active layer both sides, the resonance wavelength of microcavity is λ, and DBR comprises the low-index layer in 6 ± 2 cycles and the a-SiN of high refracting layer
xFilm, each refracting layer thickness are λ/(4n); N is a refractive index, and active layer is refractive index a-SiN between the refractive index of low-index layer and high refracting layer
zFilm, thickness are λ/(2n).
4, the method for producing photo quantum-point by gas-phase conformal thin-film growth according to claim 3 is characterized in that by control NH
3And SiH
4Two kinds of gas flow ratio R realize the component control of film, R=[NH
3]/[SiH
4]; Thereby reach the n value and the Eg value of designing requirement; Above-mentioned three kinds of films are selected R=8 ± 2,0.5 ± 0.2,2 ± 0.5 respectively for use.
5, the method for producing photo quantum-point by gas-phase conformal thin-film growth according to claim 3 is characterized in that size that conformal growing method makes microcavity not only vertically but also laterally suitable with the luminous element wavelength, this structure formation photo quantum-point.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101626143B (en) * | 2009-04-10 | 2010-08-25 | 长春理工大学 | Epitaxial growth design and method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots |
| CN101881856B (en) * | 2009-05-06 | 2012-04-25 | 中国科学院半导体研究所 | Method for adjusting GaAs-based two-dimensional photonic crystal microcavity resonance mode |
| CN102838080A (en) * | 2012-09-12 | 2012-12-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional photon limiting optical microcavity structure and preparation method thereof |
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| KR100243655B1 (en) * | 1996-12-20 | 2000-02-01 | 정선종 | A surface-emitting laser with 3-dimensional cavity and a method of fabricating the same |
| US6266357B1 (en) * | 1998-09-01 | 2001-07-24 | The United States Of America As Represented By The Secretary Of The Air Force | Microcavity surface emitting laser |
| US6704343B2 (en) * | 2002-07-18 | 2004-03-09 | Finisar Corporation | High power single mode vertical cavity surface emitting laser |
| CN100345030C (en) * | 2004-12-13 | 2007-10-24 | 中国科学院上海技术物理研究所 | Three-dimensional optical microcavity type single photon source |
| JP2006302919A (en) * | 2005-04-15 | 2006-11-02 | Sony Corp | Vertical cavity surface emitting laser and manufacturing method thereof |
| CN1327580C (en) * | 2005-04-21 | 2007-07-18 | 中国科学院上海技术物理研究所 | Mini single-photon light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101626143B (en) * | 2009-04-10 | 2010-08-25 | 长春理工大学 | Epitaxial growth design and method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots |
| CN101881856B (en) * | 2009-05-06 | 2012-04-25 | 中国科学院半导体研究所 | Method for adjusting GaAs-based two-dimensional photonic crystal microcavity resonance mode |
| CN102838080A (en) * | 2012-09-12 | 2012-12-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional photon limiting optical microcavity structure and preparation method thereof |
| CN102838080B (en) * | 2012-09-12 | 2015-06-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional photon limiting optical microcavity structure and preparation method thereof |
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