CN206225392U - It is grown in the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate - Google Patents
It is grown in the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate Download PDFInfo
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Abstract
The utility model belongs to the technical field of the MQW of nano-array, discloses the InGaN/GaN nano-pillar MQWs being grown on strontium aluminate tantalum lanthanum substrate.The InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate are grown in, including are grown in La0.3Sr1.7AlTaO6AlN nucleating layers on substrate, are grown in GaN nanometers of column template on AlN nucleating layers, are grown in the AlN/GaN superlattice layers on nanometer column template, are grown in the InGaN/GaN nano-pillar MQWs on AlN/GaN superlattice layers.The selected backing material of the utility model is with low cost, and prepared nano column array size is controllable, is orientated homogeneous, and the defect concentration of the MQW for being obtained is low, electrical and optical function admirable.
Description
Technical field
The utility model is related to the MQW of nano-array and growth field, is more particularly to grown in strontium aluminate tantalum lanthanum
(La0.3Sr1.7AlTaO6) nano-pillar MQW on substrate.
Background technology
The group III-nitride of GaN and its correlation is in electricity, optics and acoustically has extremely excellent property,
It is widely used in and prepares the devices such as light emitting diode (LEDs), laser diode (LDs) and field-effect transistor.In recent years
Come, GaN base nano-pillar LED receives much concern as one kind potential LED structure of tool, this be due to planar structure LED phases
Than nano-pillar LED first has surface to volume ratio (area/volume) high, can significantly reduce threading dislocation density；Secondly, nanometer
Post LED can increase substantially the light extraction efficiency of LED, realize the coupling outgoing of light；Finally can be by controlling the chi of nano-pillar LED
It is very little, change the emission wavelength of nano-pillar LED, the multicolor luminous nano-pillar LED of single-chip is prepared, to realize inexpensive white light
The preparation of LED opens new road.
What the nano-pillar LED that current researchers grow mainly was obtained on a sapphire substrate, sapphire and GaN
Lattice mismatch and thermal mismatching it is high, cause to form dislocation density very high in GaN nano-pillars, so that the carrier for reducing material is moved
Shifting rate, finally have impact on the performance of device.La0.3Sr1.7AlTaO6Substrate is only respectively with the lattice mismatch and thermal mismatching of GaN
0.1% and 3.6%, it is one of optimal substrates of extension GaN.But La0.3Sr1.7AlTaO6Unstable chemcial property under substrate high temperature,
Therefore La is made0.3Sr1.7AlTaO6Nano-pillar LED can really realize large-scale application on substrate, in the urgent need to finding
La0.3Sr1.7AlTaO6The new method and technique of Grown nano-pillar LED.
In addition, preparing the basis that high-quality InGaN/GaN MQWs are efficient GaN base nano-pillar LED.With GaN film
Growth mechanism it is otherwise varied, the doping of GaN base nano-pillar, the growth of MQW can all be subject to nanometer column dimension, spacing etc.
The influence of factor, therefore it certainly will be research that novel substrate Epitaxial growth prepares high-quality InGaN/GaN nano-pillars MQW
Difficult point and focus.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of prior art, the purpose of this utility model is to provide one kind to be grown in aluminium
InGaN/GaN nano-pillar MQWs on sour strontium tantalum lanthanum substrate, selected strontium aluminate tantalum lanthanum backing material is with low cost, institute
The nano column array size of preparation is controllable, is orientated homogeneous, the defect concentration of the InGaN/GaN nano-pillar MQWs for being obtained
Low, electrical and optical function admirable.
The purpose of this utility model is achieved through the following technical solutions：
It is grown in the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, including La0.3Sr1.7AlTaO6Lining
Bottom, is grown in La0.3Sr1.7AlTaO6AlN nucleating layers on substrate, are grown in GaN nanometers of column template on AlN nucleating layers, raw
AlN/GaN superlattice layers on nanometer column template long, the InGaN/GaN nano-pillars being grown on AlN/GaN superlattice layers are more
SQW.
The GaN nanometers of column template is that the GaN cushions that will be grown on AlN nucleating layers pass through nanometer embossing and quarter
What erosion was prepared from.The thickness of the GaN cushions is 500~1000nm.The cushion uses pulsed laser deposition (PLD)
Technology realizes low temperature epitaxial growth, can effectively alleviate La0.3Sr1.7AlTaO6It is unstable under substrate high temperature, with cushion
Between there is the problem of serious interfacial reaction.
The La0.3Sr1.7AlTaO6With (111) face 0.5~1 ° of (100) direction partially, for epitaxial surface, crystalline epitaxial takes substrate
It is to relation：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6(111) face.
(0001) face of the GaN of the GaN nanometers of column template is parallel to La0.3Sr1.7AlTaO6(111) face.
The GaN nanometers of column template is arranged by using TracePro software optimizations nano-pillar, using nanometer embossing
GaN cushions are prepared from lithographic technique, the nano column array size uniform for being obtained, then by prepared nano-pillar
Template carries out nano-pillar MQW in being transferred to metal organic chemical compound vapor deposition reaction chamber (MOCVD) by selective area growth
Preparation.
The GaN nanometers of column template is GaN nano column arrays.The height and GaN cushion phases of the GaN nanometers of column template
Together.
The thickness of the AlN nucleating layers is 100~200nm；The height of the GaN nanometers of column template is 500~1000nm,
A diameter of 100~200nm, adjacent spacing is 150~250nm.
The AlN/GaN superlattice layers are 15~25 AlN in cycle layers/GaN layers, and gross thickness is 20~100nm, wherein
AlN layers of thickness is 1~2nm, and the thickness of GaN layer is 1~2nm.
The InGaN/GaN nano-pillars MQW is 8~13 InGaN well layer in cycle/GaN barrier layer, wherein InGaN
The thickness of well layer is 3~5nm, and the thickness of GaN barrier layer is 10~15nm.
The InGaN/GaN nano-pillar MQWs being grown on strontium aluminate tantalum lanthanum substrate, it is described also including separation layer
Separation layer is deposited on the side wall of GaN nanometers of column template and not by the GaN nanometers of AlN nucleating layer of column template.The isolation thickness
It is 10~50nm to spend.
The material of the separation layer is SiNx、SiO2Or Al2O3。
The preparation method of the InGaN/GaN nano-pillar MQWs being grown on strontium aluminate tantalum lanthanum substrate, including with
Lower step：
(1) selection of substrate and its crystal orientation：Using La0.3Sr1.7AlTaO6Substrate, with (111) face (100) direction partially
0.5~1 ° is epitaxial surface, and crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6(111)
Face；
(2) substrate surface is polished, cleans and made annealing treatment, and the detailed process of the annealing is：Place the substrate into annealing
Interior, to La in air atmosphere at 800~900 DEG C0.3Sr1.7AlTaO6Substrate carries out annealing 3~5 hours and then air cooling
To room temperature；
(3) AlN nucleation layer epitaxially grown：Using PLD technologies, underlayer temperature is adjusted to 450~550 DEG C, in the pressure of reative cell
Power is 5.0 × 10-3~7.0 × 10-3Torr, the speed of growth are growth 100~200nm thickness under conditions of 0.2~0.3ML/s
AlN nucleating layers；
(4) GaN bufferings layer epitaxially grown：Using PLD technologies, underlayer temperature is 650~850 DEG C, in the pressure of reative cell
It is 5.0 × 10-3~7.0 × 10-3Torr, the speed of growth be 0.4~0.6ML/s under conditions of grow GaN on AlN nucleating layers
Cushion, buffer layer thickness is 500~1000nm；
(5) the GaN nanometers of preparation of column template：Arranged using TracePro software optimizations nano-pillar, using nano impression skill
Art and dry etch process are etched downwards to GaN cushions, obtain GaN nanometers of column template i.e. GaN nano column arrays, nanometer
The height of post array is 500~1000nm, and a diameter of 100~200nm, adjacent spacing is 150~250nm；
(6) preparation of separation layer：Using chemical vapor deposition, ald or magnetron sputtering technique in GaN nano-pillars
The side wall of template and the AlN nucleating layer layer deposited isolatings not covered by GaN nanometers of column template；The material of the separation layer is
SiNx、SiO2Or Al2O3, the thickness of separation layer is 10~50nm；
(7) epitaxial growth of AlN/GaN superlattice layers：In MOCVD, reaction chamber temperature is maintained at 720~780 DEG C, instead
The pressure of room is answered for 150~200Torr, in 15~25 cycle AlN/GaN superlattices of the GaN nanometers of grown on top of column template
Layer, wherein 1~2nm of AlN thickness degree, the thickness of GaN layer is 1~2nm, and gross thickness is 20~100nm；
(8) epitaxial growth of InGaN/GaN nano-pillars MQW：In MOCVD, reaction chamber temperature is maintained at 700~
780 DEG C, the pressure of reative cell is 150~200Torr, is passed through ammonia, nitrogen, trimethyl gallium and trimethyl indium, is obtained in step (7)
To AlN/GaN superlattice layers on grow InGaN/GaN nano-pillar MQWs, InGaN/GaN SQWs be 8~13 cycles
InGaN well layer/GaN barrier layer, the wherein thickness of InGaN well layer is 3~5nm, and the thickness of GaN barrier layer is 10~15nm.
Compared with prior art, the utility model has advantages below and beneficial effect：
(1) the utility model uses La0.3Sr1.7AlTaO6As substrate, La0.3Sr1.7AlTaO6Substrate is readily available, valency
Lattice are cheap, advantageously reduce production cost.
(2) the utility model obtains high-quality nanometer column template using nanometer embossing, then turns nanometer column template
Moving to MOCVD carries out the preparation of InGaN/GaN nano-pillar MQW epitaxial materials by selective area growth；Both InGaN/ is reduced
The growth difficulty of GaN nano-pillar MQWs, eliminates the harmful effect that impurity is introduced using catalyst again.
(3) the utility model takes full advantage of the respective advantage of PLD and MOCVD：Exist first by PLD technologies
La0.3Sr1.7AlTaO6Using (450-550 DEG C) first epitaxial growth high-quality cushion of low temperature on substrate, successfully suppress interface anti-
Should, it is that next step prepares the nano column array of high-quality low defect and carries out place mat；It is subsequently transferred to extension InGaN/ in MOCVD
GaN nano-pillar MQWs, have given full play to the advantage of MOCVD, improve growth rate and production capacity.
(4) the utility model is used and GaN lattice mismatches and the low La of thermal mismatching degree0.3Sr1.7AlTaO6(111) as lining
Bottom, can efficiently reduce thermal stress, reduce the formation of dislocation, and high-quality InGaN/GaN materials are prepared on nano column array
Material, favorably improves the radiation recombination efficiency of carrier, can increase substantially nitride device such as semiconductor laser, luminous two
The luminous efficiency of pole pipe and solar cell.
Brief description of the drawings
Fig. 1 is the preparation of the InGaN/GaN nano-pillar MQWs being grown on strontium aluminate tantalum lanthanum substrate of embodiment 1
Journey schematic diagram；
Fig. 2 is the knot of the InGaN/GaN nano-pillar MQWs being grown on strontium aluminate tantalum lanthanum substrate of the present utility model
Structure schematic diagram；
Fig. 3 is luminescence generated by light (PL) collection of illustrative plates of InGaN/GaN nano-pillar MQWs prepared by embodiment 1.
Specific embodiment
The utility model is described in further detail with reference to embodiment and accompanying drawing, but implementation of the present utility model
Mode not limited to this.
The structural representation of the InGaN/GaN nano-pillar MQWs being grown on strontium aluminate tantalum lanthanum substrate of the present utility model
Figure is as shown in Fig. 2 including growth La0.3Sr1.7AlTaO6Substrate, in La0.3Sr1.7AlTaO6AlN nucleating layers 11 on substrate 10,
The GaN cushions on AlN nucleating layers are grown in, and GaN cushions are etched into GaN by nanometer embossing and lithographic technique
Nano-pillar template layer 12 is GaN nano column arrays, is deposited on GaN nano-pillars template layer 12 i.e. GaN nano column arrays side wall and not
The separation layer 13 on AlN nucleating layers covered by nano-pillar, is grown on GaN nano-pillars template layer 12 at (GaN nano-pillars top)
AlN/GaN superlattice layers 14, be grown in the InGaN/GaN SQWs 15 on AlN/GaN superlattice layers 14.
The thickness of the AlN nucleating layers is 100~200nm；The height of the GaN nanometers of column template is 500~1000nm,
A diameter of 100~200nm, adjacent spacing is 150~250nm.
The AlN/GaN superlattice layers are 15~25 AlN in cycle layers/GaN layers, and gross thickness is 20~100nm, wherein
AlN layers of thickness is 1~2nm, and the thickness of GaN layer is 1~2nm.
The InGaN/GaN nano-pillars MQW is 8~13 InGaN well layer in cycle/GaN barrier layer, wherein InGaN
The thickness of well layer is 3~5nm, and the thickness of GaN barrier layer is 10~15nm.The separation layer thickness is 10~50nm.
Embodiment 1
The preparation method of the InGaN/GaN nano-pillar MQWs being grown on strontium aluminate tantalum lanthanum substrate of the present embodiment,
Comprise the following steps：
(1) selection of substrate and its crystal orientation：Using La0.3Sr1.7AlTaO6Substrate, with (111) face (100) direction partially
0.5~1 ° is epitaxial surface, and crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6(111)
Face；
(2) substrate surface is polished, cleans and made annealing treatment, and the detailed process of the annealing is：Place the substrate into annealing
Interior, to La in air atmosphere at 800 DEG C0.3Sr1.7AlTaO6Substrate carries out annealing 3 hours and then is air cooled to room temperature；
The substrate surface polishing, specially：First by La0.3Sr1.7AlTaO6Substrate surface is carried out with diamond mud
Polishing, coordinates observation by light microscope substrate surface, until after no cut, then is thrown using the method for chemically mechanical polishing
Light treatment；
The cleaning, specially：By La0.3Sr1.7AlTaO6Substrate is cleaned by ultrasonic 3 points at room temperature in being put into deionized water
Clock, removes La0.3Sr1.7AlTaO6Substrate surface pickup particle, then hydrochloric acid, acetone, ethanol washing are sequentially passed through, removal surface has
Machine thing, is dried up with drying nitrogen；
(3) AlN nucleation layer epitaxially grown：Using PLD technologies, underlayer temperature is adjusted to 450 DEG C, is in the pressure of reative cell
6.0×10-3Torr, the speed of growth are growth 100nm thickness AlN nucleating layers under conditions of 0.6ML/s；Substrate rotating speed is 5Rad/s,
Target-substrate distance is 5cm, while optical maser wavelength is 248nm in pulsed laser deposition (PLD), laser energy is 220mJ, and frequency is
10Hz, the plasma flow of nitrogen is 5sccm, and target is the AlN that purity is 99.99%, and nitrogen source is RF plasma reactor
The nitrogen plasma that treatment high pure nitrogen is produced；
(4) GaN bufferings layer epitaxially grown：Using PLD technologies, underlayer temperature is adjusted to 650 DEG C, is in the pressure of reative cell
6.0×10-3To grow GaN cushions under conditions of 0.6ML/s on AlN nucleating layers, buffer layer thickness is the Torr speeds of growth
1000nm；Substrate rotating speed is 5Rad/s, and target-substrate distance is 5cm, while optical maser wavelength is 248nm in pulsed laser deposition (PLD), is swashed
Light energy is 200mJ, and frequency is 10Hz, and the plasma flow of nitrogen is 5sccm, and target is GaN that purity is 99.99%；
(5) nanometer embossing etching nanometer column template：GaN is buffered using nanometer embossing and dry etch process
Layer is etched downwards, obtains GaN nanometers of column template i.e. GaN nano column arrays, is highly 1000nm, a diameter of 200nm, adjacent
Spacing is 250nm；
(6) layer deposited isolating：Using chemical vapor deposition, ald or magnetron sputtering technique in GaN nano-pillar moulds
Layer deposited isolating on the side wall of plate and the AlN nucleating layers not covered by nano-pillar, the material of the separation layer is SiNx, thickness is
10nm；
(7) epitaxial growth of AlN/GaN superlattice layers：The GaN nano column arrays that will be prepared are transferred in MOCVD, will
Reaction chamber temperature is maintained at 750 DEG C, under the conditions of the pressure of reative cell is for 180Torr, be not isolated GaN nanometers that layer is deposited
The top of column template is 20 cycle AlN/GaN superlattice layers of growth in nano-pillar, and AlN layers of thickness is 1nm and the thickness of GaN layer
It is 1nm to spend, and gross thickness is 40nm；Silicon source：150~300sccm, gallium source：125~175sccm, nitrogen source：25~35slm；
(8) epitaxial growth of InGaN/GaN nano-pillars MQW：Reaction chamber temperature is maintained at 750 DEG C, in reative cell
Under the conditions of 150Torr, to be passed through ammonia, nitrogen, trimethyl gallium and trimethyl indium, the AlN/GaN obtained in step (7) surpasses pressure
InGaN/GaN nano-pillar MQWs are grown on lattice layer, InGaN/GaN SQWs are that 8 InGaN well layer in cycle/GaN builds
Layer, the wherein thickness of InGaN well layer are 3nm, and the thickness of GaN barrier layer is 10nm；Indium source：450~550sccm, gallium source 100~
150sccm, 25~35slm of nitrogen source.
The preparation process of the InGaN/GaN nano-pillar MQWs being grown in the present embodiment on strontium aluminate tantalum lanthanum substrate is shown
It is intended to as shown in figure 1, specifically including：(1) PLD methods are in La0.3Sr1.7AlTaO6On Grown AlN nucleating layers, AlN into
High-quality GaN cushion is grown on stratum nucleare；(2) GaN cushions are prepared into GaN using nanometer embossing and lithographic technique to receive
Rice column template (i.e. nano column array)；(3) on the side wall and the AlN nucleating layers that are not covered by nano-pillar of GaN nanometers of column template
Layer deposited isolating；(4) then template is transferred to selective area growth AlN/GaN superlattice layers is carried out in MOCVD, after in AlN/GaN
InGaN/GaN nano-pillar MQWs are obtained on superlattice layer.
The PL spectrum of the InGaN/GaN nano-pillar MQWs that the present embodiment is prepared are as shown in figure 3, test shows quantum
In 462nm, a width of 22.0nm of half-peak shows that the LED has preferable photoelectric properties to the peak position of the luminescence generated by light of trap, is to prepare height
Imitate the ideal material of LED component.
Embodiment 2
The preparation method of the nano-pillar LED being grown on strontium aluminate tantalum lanthanum substrate of the present embodiment, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using La0.3Sr1.7AlTaO6Substrate, with (111) face (100) direction partially
0.5~1 ° is epitaxial surface, and crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6(111)
Face；
(2) substrate surface is polished, cleans and made annealing treatment, and the detailed process of the annealing is：Place the substrate into annealing
Interior, to La in air atmosphere at 850 DEG C0.3Sr1.7AlTaO6Substrate carries out annealing 5 hours and then is air cooled to room temperature；
The substrate surface polishing, specially：
First by La0.3Sr1.7AlTaO6Substrate surface diamond mud is polished, and coordinates observation by light microscope lining
Basal surface, until after no cut, then is processed by shot blasting using the method for chemically mechanical polishing.
The cleaning, specially：
By La0.3Sr1.7AlTaO6Substrate is cleaned by ultrasonic 5 minutes at room temperature in being put into deionized water, removal
La0.3Sr1.7AlTaO6Substrate surface pickup particle, then hydrochloric acid, acetone, ethanol washing are sequentially passed through, surface organic matter is removed, use
Drying nitrogen is dried up.
(3) AlN nucleation layer epitaxially grown：Using PLD technologies, underlayer temperature is adjusted to 550 DEG C, is in the pressure of reative cell
6.0×10-3The Torr speeds of growth are growth 200nm thickness AlN nucleating layers under conditions of 0.2~0.3ML/s；Substrate rotating speed is
10Rad/s, target-substrate distance is 10cm, while optical maser wavelength is 248nm in pulsed laser deposition (PLD), laser energy is 250mJ,
Frequency is 30Hz, and the plasma flow of nitrogen is 10sccm, and target is the AlN that purity is 99.99%, and nitrogen source is radio frequency plasma
The nitrogen plasma that generator treatment high pure nitrogen is produced；
(4) GaN bufferings layer epitaxially grown：Using PLD technologies, underlayer temperature is adjusted to 850 DEG C, is in the pressure of reative cell
6.0×10-3, to grow GaN cushions under conditions of 0.5ML/s on AlN nucleating layers, buffer layer thickness is for Torr, the speed of growth
1000nm；Substrate rotating speed is 10Rad/s, and target-substrate distance is 10cm, while optical maser wavelength is 248nm in pulsed laser deposition (PLD),
Laser energy is 220mJ, and frequency is 30Hz, and the plasma flow of nitrogen is 10sccm, and target is GaN that purity is 99.99%；
(5) nanometer embossing etching nanometer column template：GaN is buffered using nanometer embossing and dry etch process
Layer is etched downwards, obtains GaN nanometers of column template i.e. GaN nano column arrays, is highly 500nm, a diameter of 100nm, adjacent
Spacing is 150nm；
(6) layer deposited isolating：Using chemical vapor deposition, ald or magnetron sputtering technique in GaN nano-pillar moulds
Layer deposited isolating on the side wall of plate and the AlN nucleating layers not covered by nano-pillar, the material of the separation layer is SiO2, thickness is
50nm；
(7) epitaxial growth of AlN/GaN superlattice layers：The GaN nano column arrays that will be prepared are transferred in MOCVD, will
Reaction chamber temperature is maintained at 750 DEG C, under the conditions of the pressure of reative cell is for 200Torr, be not isolated GaN nanometers that layer is deposited
The top of column template is 20 cycle AlN/GaN superlattice layers of growth in nano-pillar, and AlN layers of thickness is 1nm and the thickness of GaN layer
It is 1nm to spend, and gross thickness is 40nm；Silicon source：150~300sccm, gallium source：125~175sccm, nitrogen source：25~35slm；
(8) epitaxial growth of InGaN/GaN nano-pillars MQW：Reaction chamber temperature is maintained at 780 DEG C, in reative cell
Under the conditions of 200Torr, to be passed through ammonia, nitrogen, trimethyl gallium and trimethyl indium, the AlN/GaN obtained in step (7) surpasses pressure
InGaN/GaN nano-pillar MQWs are grown on lattice layer, InGaN/GaN SQWs are 13 InGaN well layer/GaN in cycle
Barrier layer, the wherein thickness of InGaN well layer are 5nm, and the thickness of GaN barrier layer is 15nm；The flow in each source be indium source 450~
550sccm, 100~150sccm of gallium source, 25~35slm of nitrogen source.
Above-described embodiment is the utility model preferably implementation method, but implementation method of the present utility model is not by above-mentioned
The limitation of embodiment, it is other it is any without departing from the change made under Spirit Essence of the present utility model and principle, modify, replace
Generation, combination, simplification, should be equivalent substitute mode, be included within protection domain of the present utility model.
Claims (9)
1. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate are grown in, it is characterised in that：Including
La0.3Sr1.7AlTaO6Substrate, is grown in La0.3Sr1.7AlTaO6AlN nucleating layers on substrate, are grown on AlN nucleating layers
GaN nanometers of column template, is grown in the AlN/GaN superlattice layers on nanometer column template, is grown on AlN/GaN superlattice layers
InGaN/GaN nano-pillar MQWs.
2. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, its feature are grown according to claim 1
It is：The La0.3Sr1.7AlTaO6Substrate with (111) face 0.5~1 ° of (100) direction partially for epitaxial surface, close by crystalline epitaxial orientation
It is to be：(0001) face of GaN is parallel to La0.3Sr1.7AlTaO6(111) face.
3. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, its feature are grown according to claim 1
It is：(0001) face of the GaN of the GaN nanometers of column template is parallel to La0.3Sr1.7AlTaO6(111) face.
4. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, its feature are grown according to claim 1
It is：The GaN nanometers of column template is GaN nano column arrays；The height of the GaN nanometers of column template is identical with GaN cushions.
5. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, its feature are grown according to claim 1
It is：The thickness of the AlN nucleating layers is 100~200nm；The height of the GaN nanometers of column template is 500~1000nm, directly
Footpath is 100~200nm, and adjacent spacing is 150~250nm.
6. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, its feature are grown according to claim 1
It is：The AlN/GaN superlattice layers are 15~25 AlN in cycle layers/GaN layers, and gross thickness is 20~100nm, wherein AlN
The thickness of layer is 1~2nm, and the thickness of GaN layer is 1~2nm.
7. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, its feature are grown according to claim 1
It is：The InGaN/GaN nano-pillars MQW is 8~13 InGaN well layer/GaN barrier layer in cycle, wherein InGaN traps
The thickness of layer is 3~5nm, and the thickness of GaN barrier layer is 10~15nm.
8. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, its feature are grown according to claim 1
It is：The InGaN/GaN nano-pillar MQWs being grown on strontium aluminate tantalum lanthanum substrate, also including separation layer, it is described every
Absciss layer is deposited on the side wall of GaN nanometers of column template and not by the GaN nanometers of AlN nucleating layer of column template.
9. the InGaN/GaN nano-pillar MQWs on strontium aluminate tantalum lanthanum substrate, its feature are grown according to claim 8
It is：The separation layer thickness is 10~50nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384761A (en) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | InGaN/GaN nano-pillar multiple quantum well grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof |
| CN113257966A (en) * | 2021-04-13 | 2021-08-13 | 深圳市思坦科技有限公司 | LED chip structure, preparation method thereof and display module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106384761A (en) * | 2016-10-31 | 2017-02-08 | 华南理工大学 | InGaN/GaN nano-pillar multiple quantum well grown on strontium tantalum lanthanum aluminate substrate and preparation method thereof |
| CN113257966A (en) * | 2021-04-13 | 2021-08-13 | 深圳市思坦科技有限公司 | LED chip structure, preparation method thereof and display module |
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