CN101111102A - Silicon microphone and manufacturing method therefor - Google Patents
Silicon microphone and manufacturing method therefor Download PDFInfo
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- CN101111102A CN101111102A CNA2007101368260A CN200710136826A CN101111102A CN 101111102 A CN101111102 A CN 101111102A CN A2007101368260 A CNA2007101368260 A CN A2007101368260A CN 200710136826 A CN200710136826 A CN 200710136826A CN 101111102 A CN101111102 A CN 101111102A
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Abstract
In a silicon microphone, a corrugation is formed in a conductive layer between a center portion forming a diaphragm and a periphery, wherein the corrugation is formed on an imaginary line connecting a plurality of supports formed in a circumferential direction of the conductive layer, whereby it is possible to increase the rigidity of the conductive layer; hence, distortion or deformation may hardly occur in the conductive layer irrespective of variations of stress applied thereto. Alternatively, a planar portion is continuously formed on both sides of a step portion in the plate so as to increase its rigidity, wherein a plurality of holes are uniformly formed and arranged in the planar portion by avoiding the step portion. Thus, it is possible to realize a high sensitivity and uniformity of performance and characteristics in the silicon microphone.
Description
Technical field
The present invention relates to silicon microphone and condenser microphone, it is made of diaphragm that is arranged opposite to each other and plate.The invention still further relates to the manufacture method of silicon microphone and condenser microphone.
The application requires the priority of Japanese patent application 2006-204299 number and Japanese patent application 2006-196586 number, and it is for reference to introduce its content here.
Background technology
Traditionally, make various silicon microphones and condenser microphone according to production process of semiconductor device.Known silicon microphone is made of plate and the diaphragm that vibrates because of sound wave.In the conventionally known example of silicon microphone, the week that the conductive layer that forms diaphragm is set in qually spaced in conductive layer upwards or a plurality of support sector that is arranged on the random position that makes progress in week of conductive layer support.This technology is open in a plurality of files, and for example No. the 5452268th, Japanese Patent Application 2005-535152 number and United States Patent (USP).
When a plurality of positions that the diaphragm of forming when conductive layer upwards was provided with in its week were supported, the internal stress that is applied to conductive layer during the manufacturing process changed.Thereby the variation that is applied to the stress of conductive layer causes stress non-uniform Distribution generation is not expected in diaphragm (and conductive layer) distortion or distortion.For this reason, irregular oscillation can occur in the periphery rather than the central part of diaphragm.This makes the electrode be arranged opposite to each other, have a predetermined gap therebetween be in contact with one another undesirably in the specific region that it stands bigger vibration.This also causes reducing of in standing other zones of less vibration electrostatic capacitance change; So, reduced the sensitivity of silicon microphone.The central part of contrast diaphragm, because irregular oscillation may be easy to occur in periphery, the performance of therefore predicting silicon microphone in advance is very difficult.
US patent application publication has instructed for No. 2005/0241944 a kind of periphery at diaphragm to have the condenser microphone of bend (or step difference).United States Patent (USP) the 4776019th has instructed a kind of periphery at diaphragm to form the condenser microphone in hole.
When forming plate by CVD (chemical vapour deposition (CVD)) above diaphragm, the shape of step difference or the shape in hole are transferred on the plate undesirably, and this plate has the hole that allows sonic propagation to pass through.In manufacturing process, be added to the place, hole that the external force of plate and stress that the electrostatic attraction between plate and the diaphragm causes can concentrate on plate, thereby plate may be damaged.
Summary of the invention
The purpose of this invention is to provide a kind of distortion of the conductive layer by reduce forming diaphragm and occur in the silicon microphone that the irregular oscillation of the periphery of conductive layer has high sensitivity and homogeneous performance by minimizing.
Another object of the present invention provides a kind of silicon microphone that has improved the intensity of plate.
In a first aspect of the present invention, a kind of silicon microphone comprises: its central part forms the conductive layer of diaphragm; The week that is arranged on conductive layer is upwards to support a plurality of support sectors of conductive layer; And be formed on conductive layer neutralization gauffer across the dotted line configuration of drawing between a plurality of support sectors.Owing to formed gauffer, can improve the rigidity of the conductive layer that forms diaphragm, thereby can be difficult in conductive layer, be distorted or be out of shape, and irrelevant with the variation of the stress that is added on it.In addition, can prevent from conductive layer, to take place very big local vibration and very little local vibration; Therefore, can prevent from irregular oscillation to take place at the periphery of the outside that is arranged in the conductive layer central part that forms diaphragm; So, can significantly improve the sensitivity of silicon microphone.And, the vibration of diaphragm can be stablized and the performance of silicon microphone height and homogeneous can be realized.
Above, gauffer is connected between the support sector, perhaps is arranged on the outside of support sector.In addition, gauffer forms the circle concentric with conductive layer, and perhaps it forms the arc concentric with conductive layer.Perhaps, can form a plurality of gauffers with respect to the radiation mode of conductive layer.Form gauffer by the thickness that partly reduces conductive layer here.Replace gauffer, can in conductive layer, form thick portion by the thickness that partly increases conductive layer.
In a second aspect of the present invention, a kind of condenser microphone comprises: support sector; Has the plate that a plurality of holes and fixed electrode and the portion of being supported support; And the diaphragm that has the traveling electrode of relative fixed electrode configuration and vibrate because of the sound wave that is added on it, wherein plate has par and the stage portion that thickness differs from one another, wherein the par is formed on plate is run through in the both sides of stage portion and wherein a plurality of hole on thickness direction par continuously.Here, the hole does not form across stage portion and arranges that the stress of plate concentrates on this stage portion; So, compare another plate that the hole is arranged across stage portion, can increase the rigidity of plate.Therefore, can prevent that plate is easily by damage.
Above, the hole that allows sound wave therefrom to propagate evenly forms and is arranged in the par of plate, so improved the output characteristic of condenser microphone.In addition, arrange along many lines or along a plurality of circles by avoiding stage portion in the hole.
In addition, diaphragm has the bend of the bending on thickness direction of the stage portion that meets plate, makes bend prolong along stage portion.Perhaps, diaphragm has seam, the edge that the stage portion of plate is formed meet seam and prolong along the edge of seam.Perhaps, the stage portion of plate forms the edge that meets diaphragm and prolongs along the edge of diaphragm.The aperture area that is formed near each hole the stage portion is less than the aperture area away from each hole of stage portion.This has improved the degree of freedom that the hole is set in plate; The hole is feasible not to have the hole to arrange across stage portion with being provided with easily.
In the manufacture method of condenser microphone, diaphragm has the bend of the bending on thickness direction that forms by deposition; The sacrifice layer that covers bend is formed on the diaphragm by deposition; Plate with par and stage portion is formed on the sacrifice layer by deposition, wherein the par be formed on continuously the both sides of stage portion and wherein stage portion form the bend that meets diaphragm; Etched plate is to be formed on a plurality of holes of the par of running through plate on the thickness direction; Then the etch sacrificial layer is to form the air gap between diaphragm and the plate.
Perhaps, form diaphragm by deposition; The etching diaphragm is to be formed on the seam that runs through diaphragm on the thickness direction; On diaphragm, form the sacrifice layer that covers seam; By being deposited on the plate that formation has par and stage portion on the sacrifice layer, wherein the par be formed on continuously the both sides of stage portion and wherein stage portion form the edge of the seam that meets diaphragm; Etched plate is to be formed on a plurality of holes of running through the par on the thickness direction; Then the etch sacrificial layer is to form the air gap between diaphragm and the plate.
Perhaps, form diaphragm by deposition; Form the sacrifice layer at the edge that covers diaphragm by deposition; By being deposited on the plate that formation has par and stage portion on the sacrifice layer, wherein the par be formed on continuously the both sides of stage portion and wherein stage portion form the edge that meets diaphragm; Etched plate is to be formed on a plurality of holes of the par of running through plate on the thickness direction; Then the etch sacrificial layer is to form the air gap between diaphragm and the plate.
According to above-mentioned manufacture method, can be simply and easily make the condenser microphone that constitutes by diaphragm with high rigidity and plate.
Description of drawings
To be described in more detail these and other purposes of the present invention, aspect and embodiment with reference to the accompanying drawings, wherein:
Figure 1A is the plane graph that illustrates according to the formation of the silicon microphone of first embodiment of the invention;
Figure 1B is the drawing in side sectional elevation along Figure 1A center line B-B;
Fig. 1 C is the drawing in side sectional elevation along Figure 1A center line C-C;
Fig. 2 A is the drawing in side sectional elevation of first step that is used to explain the manufacture method of silicon microphone;
Fig. 2 B is the drawing in side sectional elevation of second step that is used to explain the manufacture method of silicon microphone;
Fig. 2 C is the drawing in side sectional elevation of third step that is used to explain the manufacture method of silicon microphone;
Fig. 2 D is the drawing in side sectional elevation of the 4th step that is used to explain the manufacture method of silicon microphone;
Fig. 2 E is the drawing in side sectional elevation of the 5th step that is used to explain the manufacture method of silicon microphone;
Fig. 3 A is the drawing in side sectional elevation of the 6th step that is used to explain the manufacture method of silicon microphone;
Fig. 3 B is the drawing in side sectional elevation of the 7th step that is used to explain the manufacture method of silicon microphone;
Fig. 3 C is the drawing in side sectional elevation of the 8th step that is used to explain the manufacture method of silicon microphone;
Fig. 3 D is the drawing in side sectional elevation of the 9th step that is used to explain the manufacture method of silicon microphone;
Fig. 4 is the amplification drawing in side sectional elevation of relevant Fig. 3 C;
Fig. 5 is the drawing in side sectional elevation that is used to explain first variant of first embodiment;
Fig. 6 is the drawing in side sectional elevation that is used to explain second variant of first embodiment;
Fig. 7 is the plane graph that is used to explain the 3rd variant of first embodiment;
Fig. 8 is the plane graph that is used to explain the 4th variant of first embodiment;
Fig. 9 is the plane graph that is used to explain the 5th variant of first embodiment;
Figure 10 is the plane graph that is used to explain the 6th variant of first embodiment;
Figure 11 is the drawing in side sectional elevation that is used to explain the 7th variant of first embodiment;
Figure 12 is the drawing in side sectional elevation that is used to explain the 8th variant of first embodiment;
Figure 13 is the drawing in side sectional elevation that is used to explain the 9th variant of first embodiment;
Figure 14 A is the plane graph that illustrates according to the formation of the condenser microphone of second embodiment of the invention;
Figure 14 B is the drawing in side sectional elevation along Figure 14 A center line B1-B1;
Figure 15 A is the drawing in side sectional elevation of first step that is used to explain the manufacture method of condenser microphone;
Figure 15 B is the drawing in side sectional elevation of second step that is used to explain the manufacture method of condenser microphone;
Figure 15 C is the drawing in side sectional elevation of third step that is used to explain the manufacture method of condenser microphone;
Figure 16 A is the drawing in side sectional elevation of the 4th step that is used to explain the manufacture method of condenser microphone;
Figure 16 B is the drawing in side sectional elevation of the 5th step that is used to explain the manufacture method of condenser microphone;
Figure 16 C is the drawing in side sectional elevation of the 6th step that is used to explain the manufacture method of condenser microphone;
Figure 17 A is the plane graph that illustrates according to the formation of the condenser microphone of first variant of second embodiment;
Figure 17 B is the drawing in side sectional elevation along Figure 17 A center line B4-B4;
Figure 18 A is the drawing in side sectional elevation of first step that is used to explain the manufacture method of condenser microphone;
Figure 18 B is the drawing in side sectional elevation of second step that is used to explain the manufacture method of condenser microphone;
Figure 18 C is the drawing in side sectional elevation of third step that is used to explain the manufacture method of condenser microphone;
Figure 19 A is the plane graph that illustrates according to the formation of the condenser microphone of second variant of second embodiment;
Figure 19 B is the drawing in side sectional elevation along Figure 19 A center line B6-B6;
Figure 20 A is the plane graph of first step that is used to explain the manufacture method of condenser microphone;
Figure 20 B is the drawing in side sectional elevation of Figure 20 A;
Figure 21 A is the plane graph of second step that is used to explain the manufacture method of condenser microphone;
Figure 21 B is the drawing in side sectional elevation of Figure 21 A;
Figure 22 A is the plane graph of third step that is used to explain the manufacture method of condenser microphone;
Figure 22 B is the drawing in side sectional elevation of Figure 22 A;
Figure 23 A is the plane graph that illustrates according to the formation of the condenser microphone of the 3rd variant of second embodiment;
Figure 23 B is the drawing in side sectional elevation along Figure 23 A center line B10-B10;
Figure 24 A is the drawing in side sectional elevation of first step that is used to explain the manufacture method of condenser microphone;
Figure 24 B is the drawing in side sectional elevation of second step that is used to explain the manufacture method of condenser microphone;
Figure 24 C is the drawing in side sectional elevation of third step that is used to explain the manufacture method of condenser microphone;
Figure 25 is the plane graph that illustrates according to the condenser microphone of the 4th variant of second embodiment;
Figure 26 is the plane graph that illustrates according to the condenser microphone of the 5th variant of second embodiment; And
Figure 27 is the plane graph that illustrates according to the condenser microphone of the 6th variant of second embodiment.
Embodiment
Further describe the present invention by example with reference to the accompanying drawings.
1. first embodiment
Figure 1A to 1C shows the silicon microphone 10 according to first embodiment of the invention.Silicon microphone 10 is by the semiconductor fabrication process manufacturing.
Insulating barrier 40 is formed on the surface 13 of substrate 11.The oxide skin(coating) that insulating barrier 40 is made up of for example silicon dioxide.Insulating barrier 40 has the opening 41 of perimembranous formation within it.The periphery of the opening 41 of insulating barrier 40 forms the support sector 42 that supports second conductive layer 30.
Second conductive layer 30 is formed on the opposition side of the relative substrate 11 of insulating barrier 40.Second conductive layer 30 is made up of doped polycrystalline silicon, for example phosphorous doped polysilicon.The periphery of second conductive layer 30 is supported by the support sector 42 of corresponding insulating barrier 40.Second conductive layer 30 has a plurality of bridges 31, and it is inwardly outstanding from support sector 42.The week that bridge 31 is arranged on second conductive layer 30 makes progress.A joint bridge 31 in each end of sept 43.The other end support opposite that first conductive layer 20 is spaced apart thing 43 with bridge 31.That is, the sept 43 that extends from bridge 31 forms the holding components of supporting first conductive layer 20.Sept 43 is supported first conductive layer 20 in a plurality of positions that make progress in the week that is arranged at first conductive layer 20.
The sept 43 that first conductive layer 20 is extended from the bridge that is arranged at a plurality of positions that make progress in its week is supported.In other words, first conductive layer 20 is supported downwards from the bridge 31 of corresponding second conductive layer 30 by sept 43.Being similar to second conductive layer, 30, the first conductive layers is made up of doped polycrystalline silicon, for example phosphorous doped polysilicon.First conductive layer 20 has central part, and it inwardly is provided with to form diaphragm 21 by sept 43.Diaphragm 21 vibrates because of the sound wave that is added on it.The diaphragm 21 that forms by first conductive layer 20 has the periphery 22 that is positioned at its central part outside.
Assign to form plate 33 (that is the backboard that is oppositely arranged with diaphragm 21) by the reservations of second conductive layers 30 that inwardly are provided with by bridge 31.Plate 33 has a plurality of holes 34, and it runs through second conductive layer 30 (forming plate 33) on its thickness direction.Second conductive layer 30 is by insulating barrier 40 and substrate 11 electric insulations.Be similar to insulating barrier 40, sept between first conductive layer 20 and second conductive layer 30 43 is made up of insulating material.That is, first conductive layer 20 is by sept 43 and second conductive layer, 30 electric insulations.For convenience, Figure 1A does not have to show the plate 33 that forms by second conductive layer 30.
Shown in Figure 1B, diaphragm 21 and substrate 11 all are connected to bias voltage source 50.The substrate 11 and first conductive layer 20 all have conductivity, thereby diaphragm 21 and substrate 11 are set to same potential in fact.Plate 33 is connected to the input that has than the operational amplifier 51 of high input impedance.
When sound wave propagated into diaphragm 21 via the hole 34 of plate 33, diaphragm 21 vibrated because of sound wave.The vibration of diaphragm 21 causes the variation of distance between diaphragm 21 and the plate 33.Diaphragm 21 and plate 33 are arranged opposite to each other, and air gap therebetween has insulating property (properties).Since the variation of distance between diaphragm 21 and the plate 33, electrostatic capacitance respective change therebetween.
Because plate 33 is connected to the operational amplifier 51 that has than high input impedance, be present in the quantity of electric charge very little in the plate 33 and move, and the variation of electrostatic capacitance is irrelevant between diaphragm 21 and the plate 33 towards operational amplifier 51.That is, being present in diaphragm 21 and the plate 33 change in charge can think and can ignore.In other words, the variation of electrostatic capacitance can be converted into the potential change of plate 33 in fact between diaphragm 21 and the plate 33.Therefore, silicon microphone 10 can produce the signal of telecommunication based on the very little potential change of the plate 33 that is caused by electrostatic capacitance change.In the silicon microphone 10, the variation that is added to the acoustic pressure of diaphragm 21 is transformed into the variation of electrostatic capacitance, and it then is transformed into the potential change of plate 33, produces the signal of telecommunication of corresponding acoustic pressure based on this potential change.
In the silicon microphone 10, form gauffer 23 to realize the high rigidity of first conductive layer 20.Gauffer 23 is positioned between the periphery 22 of the central part (form diaphragm 21) of first conductive layer 20 and first conductive layer 20.Particularly, gauffer 23 forms the central part of first conductive layer 20 and the ditch between the periphery 22, and wherein it caves on the rightabout of second conductive layer 30.Among first embodiment, gauffer 23 upwards forms in week with one heart continuously with first conductive layer 20 that forms diaphragm 21.Among Figure 1A, draw dotted line Li so that sept 43 is linked together, wherein gauffer 23 is arranged across dotted line Li.Dotted line Li is the virtually drawing straightway that directly connects the sept that makes progress in week 43 that is arranged on silicon microphone 10.
Owing to formed gauffer 23, on the thickness direction of first conductive layer 20, form stage portion, thereby in first conductive layer 20, form angle 24.Particularly, arrange along the periphery of first conductive layer 20 to the direction of periphery at the central part from first conductive layer 20 at a plurality of angles 24.Owing to formed by forming the angle 24 that gauffer 23 forms, therefore can be in the rigidity of raising gauffer 23 places first conductive layer 20 on the both direction circumferentially and radially.Because gauffer 23 forms across dotted line Li, can significantly improve relevant central part (forming diaphragm 21) and peripheral 22 both rigidity of first conductive layer 20.Owing to improved the rigidity (this comes from and has formed gauffer 23) of first conductive layer 20, be difficult in first conductive layer 20, be distorted (or variant), and irrelevant with STRESS VARIATION.That is, can significantly reduce the chance that very big local vibration or very little local vibration take place in first conductive layer 20.As a result, irregular oscillation takes place in the periphery 22 that can significantly reduce in the outside that is arranged in first conductive layer, 20 central parts that form diaphragm 21.This has stablized the vibration of first conductive layer 20, thereby can prevent to make first conductive layer, 20 contacts, second conductive layer 30 in periphery 22, and can prevent that small vibration reduces the sensitivity of silicon microphone 10 owing to take place very in first conductive layer, 20 central parts that form diaphragm 21 because very big irregular oscillation takes place.
Owing to reduced very big irregular oscillation taking place in periphery 22, can significantly reduce the chance that first conductive layer 20 contacts second conductive layer 30 undesirably.Can reduce the distance between first conductive layer 20 and second conductive layer 30 when in other words, designing silicon microphone 10.That is, can reduce the distance between diaphragm 21 and the plate 33, therefore the sensitivity that can improve silicon microphone 10.Owing to the vibration of having stablized first conductive layer 20, can realize the performance of silicon microphone 10 height and homogeneous.
Next, describe the manufacture method of silicon microphone 10 in detail with reference to figure 2A to 2E and Fig. 3 A to 3D.
Shown in Fig. 2 A, on the surface 61 of substrate 60 (forming), form oxide skin(coating) 62 by silicon by growthing silica.Insulating barrier 40 shown in oxide skin(coating) 62 corresponding Figure 1B and the 1C.Shown in Fig. 2 B, in oxide skin(coating) 62, form recess 63.Particularly, oxide skin(coating) 62 is covered by Etching mask, and then uses hydrogen fluoride etched, thereby forms recess 63.The thickness of oxide skin(coating) 62 mates the degree of depth that is formed on the gauffer 23 in first conductive layer 20 shown in Figure 1B and the 1C in fact.The etching oxide layer 62 in one way, and 61 parts, surface of substrate 60 are exposed in recess 63.
Finish (having formed recess 63 thus in oxide skin(coating) 62) after the etching, shown in Fig. 2 C, first conductive layer 64 uses polysilicon depositions on the predetermined portions on the oxide skin(coating) 62 and substrate 60 surfaces 61 of exposing from oxide skin(coating) 62.Shown in Fig. 2 D, remove the periphery of first conductive layer 64 by composition.
After finishing the composition of first conductive layer 64, shown in Fig. 2 E, oxide skin(coating) 62 is further formed on its preformed part.In addition, second conductive layer 66 is deposited on the surface 65 of the oxide skin(coating) 62 that is oppositely arranged with substrate 60 surfaces 61.Further the oxide skin(coating) 62 that forms is formed on first conductive layer 64 relative with substrate 60.So first conductive layer 64 is imbedded in the oxide skin(coating) 62.After finishing the suitable growth of oxide skin(coating) 62, second conductive layer 66 is deposited on the surface 65 of the oxide skin(coating) 62 relative with substrate 60.Similar first conductive layer, 64, the second conductive layers 66 form by polysilicon deposition.
After finishing the formation of the oxide skin(coating) 62 and second conductive layer 66, as shown in Figure 3A, second conductive layer 66 is carried out the recess 67 of composition with the hole 34 that forms second conductive layer 30 shown in corresponding Figure 1B and the 1C.
Finish after the composition of second conductive layer 66, shown in Fig. 3 B, substrate 60 is carried out composition.Particularly, the surface 68 of substrate 60 is covered by Etching mask 69, and then uses anisotropy or isotropic etching solution patterned.So, the opening 71 of formation respective chamber 12 in substrate 60.
Shown in Fig. 3 B, mask 72 is formed on second conductive layer 66 to cover the predetermined portions of the oxide skin(coating) 62 that exposes from second conductive layer 66.Then, use hydrogen fluoride etch oxide skin(coating) 62 by recess 67 and opening 71.Because be positioned at peripheral masked 72 coverings of the oxide skin(coating) 62 of second conductive layer, 66 outsides, the predetermined portions of the oxide skin(coating) 62 corresponding with support sector 42 is not etched, still keeps intact.As shown in Figure 4, remaining 73 width of second conductive layer 66 that keeps between the hole 34 of corresponding recess 67 is suitably adjusted, and makes that the sept 74 that uses oxide skin(coating) 62 to form is not etched, and still stays near the substrate 60.So first conductive layer 64 is spaced apart thing 74 support, sept 74 uses oxide skin(coating)s 62 to form and between first conductive layer 64 and second conductive layer 66.
Because the etching of oxide skin(coating) 62, as Fig. 3 C and shown in Figure 4, other parts of removing support sector 42 and sept 43 of oxide skin(coating) 62 are removed.In addition, the recess 75 of corresponding gauffer 23 is formed in first conductive layer 64.Finish after the etching of oxide skin(coating) 62, shown in Fig. 3 D, remove mask 72.
After above-mentioned manufacturing process, carry out scribing and encapsulation step and make silicon microphone 10 to finish.
In the silicon microphone 10, gauffer 23 is formed between first conductive layer, 20 central parts and periphery 22 that form diaphragm 21.Gauffer 23 arranges across being connected the dotted line Li that is arranged between the circumferential sept 43, thereby can significantly improve the rigidity of first conductive layer 20 of corresponding diaphragm 21.Owing to improved rigidity, can be difficult in first conductive layer 20 be distorted or be out of shape, irrelevant with the variation of the stress that is added on it.That is, can prevent from first conductive layer 20 very big local vibration and very little local vibration take place, and can prevent from irregular oscillation to take place at the periphery 22 of the outside that is arranged in first conductive layer, 20 central parts corresponding with diaphragm 21.Therefore, can stablize the vibration of first conductive layer 20, so improved the sensitivity of silicon microphone 10.In addition, can realize the performance of silicon microphone 10 height and homogeneous.
First embodiment can further press modified in various manners; So the following describes the variant of first embodiment.
(a) first variant
In first variant of first embodiment, as shown in Figure 5, the gauffer 23 of first conductive layer 20 is outstanding towards second conductive layer 30.Can improve the rigidity of first conductive layer 20 and irrelevant with the projected direction of gauffer 23; So, can form gauffer 23 by a kind of mode, make it outstanding towards second conductive layer 30.
(b) second variant
In second variant of first embodiment, as shown in Figure 6, thick 25 is formed in first conductive layer 20.Particularly, the thickness that increases by first conductive layer 20 by the part forms thick 25.Similar gauffer 23 has improved the rigidity of first conductive layer 20 for thick 25.In other words, can use gauffer 23 or thick 25 rigidity that improves first conductive layer 20.
First embodiment is described as, and shown in Figure 1A, gauffer 23 arranges that across the dotted line Li that connects wherein gauffer 23 upwards formed continuously in the week of first conductive layer 20 between sept 43.Here, any one that requires gauffer 23 is formed in meeting the following conditions.
(1) gauffer 23 forms across the dotted line Li that connects sept 43 and arranges (as described in first embodiment).
(2) gauffer 23 is formed on the dotted line Li that connects sept 43.
(3) gauffer 23 is formed on the outside of sept 43.
Design following variant to satisfy the above-mentioned condition that is applied to gauffer 23.
(c) the 3rd variant
Fig. 7 shows the 3rd variant of first embodiment, wherein silicon microphone 10 be designed to satisfy condition (2).That is, gauffer 23 is formed on the dotted line Lii that is connected in the sept 43 that makes progress in 20 weeks of first conductive layer.In the 3rd variant, gauffer 23 forms the straight line that connects sept 43.That is, gauffer 23 forms location matches sept 43 square on its summit.
(d) the 4th variant
Fig. 8 shows the 4th variant of first embodiment, wherein silicon microphone 10 be designed to satisfy condition (2).That is, gauffer 23 is formed on the dotted line Lii that is connected in the sept 43 that makes progress in 20 weeks of first conductive layer.In the 4th variant, gauffer 23 forms according to the circle of drawing with the concentric mode of first conductive layer 20 to be connected between sept 43.
According to third and fourth variant, gauffer 23 is formed in first conductive layer 20 to connect sept 43; So, can improve the rigidity of first conductive layer 20 that forms diaphragm 21.Owing to improved rigidity, in first conductive layer 20, can be difficult to be distorted or be out of shape, irrelevant with the variation of stress that adds with it.So, can prevent from very big local vibration and very little local vibration take place in first conductive layer 20, and can prevent from irregular oscillation to take place at the periphery 22 of the outside that is arranged in first conductive layer, 20 central parts that form diaphragm 21.In addition, the vibration of first conductive layer 20 can be stablized, and the sensitivity of silicon microphone 10 can be improved.In addition, can realize the homogenization of silicon microphone 10 performances and characteristic.
(e) the 5th variant
Fig. 9 shows the 5th variant of first embodiment, wherein silicon microphone 10 be designed to satisfy condition (1).That is, a plurality of gauffers 23 form across the dotted line Li that is connected in the sept 43 that makes progress in 20 weeks of first conductive layer and arrange.In the 5th variant, gauffer 23 is arranged with the dotted line Li across connection sept 43 by the radial manner setting.
Owing to formed the gauffer of being arranged to across the dotted line Li layout that connects sept 43 23, can improve the rigidity of first conductive layer 20 that forms diaphragm 21.Similar first embodiment, the vibration that can stablize first conductive layer 20, and the sensitivity that can improve silicon microphone 10.In addition, can realize the homogenization of silicon microphone 10 performances and characteristic.
In the 5th variant, three gauffers 23 are arranged between two septs 43 by mode radially.Can freely determine the quantity and the angle of gauffer 23 here, according to the characteristic of silicon microphone 10.
(f) the 6th variant
Figure 10 shows the 6th variant of first embodiment, wherein silicon microphone 10 be designed to satisfy condition (3).That is, gauffer 23 is formed on the outside that is arranged at the sept 43 that makes progress in 20 weeks of first conductive layer.In the 6th variant, gauffer 23 is by being arranged on the outside of sept 43 with the concentric mode of first conductive layer 20.Here, gauffer 23 is formed on the circle of sept 43 outsides continuously.
Owing to formed the gauffer 23 of sept 43 outsides, can improve the rigidity of first conductive layer 20 that forms diaphragm 21, thereby in first conductive layer 20, can be difficult to be distorted or be out of shape, irrelevant with the variation of the stress that is added on it.So, can prevent from very big local vibration and very little local vibration take place in first conductive layer 20, and can prevent from irregular oscillation to take place at the periphery 22 of the outside that is arranged in first conductive layer, 20 central parts that form diaphragm 21.In addition, the vibration of first conductive layer 20 can be stablized, and the sensitivity of silicon microphone 10 can be improved.And, can realize the homogenization of silicon microphone 10 performances and characteristic.
In first embodiment and above-mentioned variant, first conductive layer 20 that forms diaphragm 21 is supported by the sept 43 that extends from second conductive layer 30; But this is not restriction.That is, the supporting structure that is applicable to first conductive layer 20 need not be confined to use sept 43.Design following variant is applicable to first conductive layer 20 with modification supporting structure.
(g) the 7th variant
Figure 11 shows the 7th variant of first embodiment, and first conductive layer 20 that wherein forms diaphragm 21 is supported by substrate 11.That is, has the substrate 11 of cavity 12 as the supporting structure of supporting first conductive layer 20.
(h) the 8th variant
Figure 12 shows the 8th variant of first embodiment, and first conductive layer 20 that wherein forms diaphragm 21 is supported from substrate 11 outstanding support sectors 14.
(i) the 9th variant
Figure 13 shows the 9th variant of first embodiment, and first conductive layer 20 that wherein forms diaphragm 21 can move towards second conductive layer 30.In the silicon microphone 10 of Figure 13, when first conductive layer 20 and 30 energisings of second conductive layer, because the electrostatic attraction that puts on therebetween makes first conductive layer 20 move towards second conductive layer 30.The mobile thing 44 that is spaced apart of first conductive layer 20 limits, and sept 44 is given prominence to and contacted with first conductive layer 20 from second conductive layer 30.Because energising, first conductive layer 20 (forming diaphragm 21) moves towards second conductive layer 30, and wherein sept 44 is as the supporting structure of supporting first conductive layer 20.
In first embodiment and first to the 6th variant, four septs 43 are along circumferentially being arranged between first conductive layer 20 and second conductive layer 30.The quantity of sept 23 need not be confined to four; That is the requirement of at least two sept 23 satisfied first embodiment.
In addition, first conductive layer 20 (forming diaphragm 21) and second conductive layer 30 (forming plate 33) needn't form circle.That is, it can form other shapes, for example ellipse, rectangle and polygon.
And silicon microphone 10 needn't be according to each above-mentioned example design; That is, it can design based on the appropriate combination of above-mentioned example.
2. second embodiment
With reference to figure 14A and 14B, describe condenser microphone 1001 in detail according to second embodiment of the invention, wherein condenser microphone 1001 is silicon microphones of making by semiconductor fabrication process.Condenser microphone 1001 will be transformed into the signal of telecommunication via the sound wave that plate 1030 is propagated.
The detecting means of condenser microphone 1001 comprises substrate 1010 and the first, second, third and the 4th film that stacks together.
The insulation film that first film is made up of silicon dioxide.First support sector 1012 uses first film to form, thereby according to the mode that forms the air gap between diaphragm 1020 and the substrate 1010 is supported in second film on the substrate 1010.First film has circular open 1013.
The conductive film that second film is made up of doped polycrystalline silicon (for example phosphorous doped polysilicon).Diaphragm 1020 uses the predetermined portions of second film that is not fixed on first film to form.Diaphragm 1020 be not fixed on first and tertiary membrane and it as the traveling electrode of vibrating because of sound wave.Diaphragm 1020 has the circle that covers cavity 1011.Crooked bend 1022 is formed on the periphery of diaphragm 1020 on thickness direction.Bend 1022 is formed on the whole circumference of outside of the central part of corresponding diaphragm 1020.
Similar first film, the insulation film that tertiary membrane is made up of silicon dioxide.Tertiary membrane forms second support sector 1014, and it provides the insulation between the second and the 4th film that all has conductivity, and it is supported in the 4th film on second film.Tertiary membrane has circular open 1015.
The conductive film that the 4th film is made up of doped polycrystalline silicon (for example phosphorous doped polysilicon).Plate 1030 uses the predetermined portions of the 4th film that is not fixed to tertiary membrane to form.Plate has stage portion 1032 and par 1033.The difference in height of the corresponding in fact bend 1022 of the difference in height of stage portion 1032, wherein stage portion 1032 has the circle that prolongs along bend 1022.Par 1033 is formed on the both sides of stage portion 1032 continuously.
As shown in Figure 14B, condenser microphone 1001 has test section (realizing by circuit), and wherein diaphragm 1020 is connected to the bias voltage source with lead-in wire 1104 and 1106.Particularly, lead-in wire 1104 is connected to substrate 1010 and goes between and 1106 is connected to second film, thereby diaphragm 1020 and substrate 1010 are all set for same potential in fact.Plate 1030 is connected to the input of operational amplifier 1100.Particularly, the lead-in wire 1108 that is connected to the input of operational amplifier 1100 is connected to the 4th film.Operational amplifier 1100 has high input impedance.
Then, will the action of condenser microphone 1001 be described.When sound wave propagated into diaphragm 1020 via the hole 1036 of plate 1030, diaphragm 1020 made the variable in distance between diaphragm 1020 and the plate 1030 because of sound wave vibrates, thereby causes the variation of electrostatic capacitance therebetween.
Because plate 1030 is connected to the operational amplifier 1100 with high input impedance, even when the electrostatic capacitance between diaphragm 1020 and the plate 1030 changes, also exists only in the quantity of electric charge very little in the plate 1030 and moves towards operational amplifier 1100.That is, think that the electric charge that is present in plate 1030 and the diaphragm 1020 does not change in fact.This feasible potential change that the variation of electrostatic capacitance can be converted to plate 1030.Therefore, condenser microphone 1001 can respond electrostatic capacitance change very little between diaphragm 1020 and the plate 1030 and produce the signal of telecommunication.In other words, in condenser microphone 1001, the variation that is added to the acoustic pressure of diaphragm 1020 is converted into the variation of electrostatic capacitance, and then is converted into potential change, produces the signal of telecommunication of response sound pressure variations based on this potential change.
Next, describe the manufacture method of condenser microphone 1001 in detail.
At first, shown in Figure 15 A, deposition first film 1051 on the wafer 1050 of substrate 1010 shown in corresponding diagram 14A and the 14B.First film 1051 is etched with formation annular recess 1051a.Particularly, by plasma CVD deposition of silica on the wafer 1050 that monocrystalline silicon is formed, so form first film 1051.Then, at the whole surface applied photoresist film of first film 1051; Then, form the resist pattern by photoetching, wherein the predetermined Etching mask of use exposes and develops; After this, by anisotropic etching for example RIE (reactive ion etching) selectivity remove first film 1051, so form the annular recess 1051a in first film 1051.
Next, shown in Figure 15 B, deposition second film 1052 on first film 1051.Particularly, CVD deposits phosphorous doped polysilicon on first film 1051 by decompression, so form second film 1052.In second film 1052, form its shape and mate the bend 1022 of shape of the recess 1051a of first film 1051 in fact.
Next, shown in Figure 15 C, deposition tertiary membrane 1053 on second film 1052.Particularly, by plasma CVD deposition of silica on second film 1052, so form tertiary membrane 1052.In tertiary membrane 1053, form its shape and mate the recess 1053a of shape of the bend 1022 of second film 1052 in fact.
Then, shown in Figure 16 A, deposition has the 4th film 1054 of through-hole pattern 1034 on tertiary membrane 1053.Particularly, CVD deposits phosphorous doped polysilicon on tertiary membrane 1053 by decompression, so form the 4th film 1054.As a result, in the 4th film 1054, form the stage portion 1032 of shape above the bend 1022 be positioned at second film 1052, that its shape is mated the recess 1053a of tertiary membrane 1053 in fact.In addition, form the par continuously in the both sides of the stage portion 1032 of the 4th film 1054.
Next, the 4th film 1054 is carried out etching, thereby in the par of the 4th film 1054, form a plurality of holes 1036.Particularly, at the whole surface applied photoresist film of the 4th film 1054; Then, form the resist pattern, wherein use Etching mask to expose and develop by photoetching; After this, by anisotropic etching for example the RIE selectivity remove the 4th film 1054.
Then, shown in Figure 16 B, in wafer 1050, form cavity 1011.Particularly, apply photoresist film at the whole back side of wafer 1050; Then, form the resist pattern, wherein use Etching mask to expose and develop by photoetching; After this, remove wafer 1050 by for example dark RIE selectivity of anisotropic etching, so form the cavity 1011 in the wafer 1050.
Next, shown in Figure 16 C, selectivity is removed first film 1051 and tertiary membrane 1053 to form opening 1013 and 1015, exposes second film 1052 by this opening from tertiary membrane 1053.Particularly, at the whole surface of tertiary membrane 1053 and the whole surface applied photoresist film of the 4th film 1054; Then, form resist pattern, wherein use Etching mask to expose and develop with the opening that is used to expose through-hole pattern 1034 by photoetching.Then, by isotropism wet etching (using etching solution such as dilute hydrofluoric acid (or dilution HF)) or the combination by isotropic etching and anisotropic etching, it all is first film 1051 and the tertiary membrane 1053 of silicon oxide film that selectivity is removed.At this moment, etching solution permeates to dissolve first film 1051 and tertiary membrane 1053 via the hole 1036 of the 4th film 1054 and the cavity 1011 of substrate 1010.By suitable design through-hole pattern 1034 and cavity 1011, in first film 1051 and tertiary membrane 1053, form opening 1013 and 1015 respectively.As a result, the detecting means of condenser microphone 1001 constitutes (seeing Figure 14 B) by diaphragm 1020, plate 1030, first support sector 1012 and second support sector 1014.
After this, finish making condenser microphone 1001 by scribing and packaging technology.
Second embodiment need not be confined to above-mentioned condenser microphone 1001; Therefore, it can be revised according to multiple mode, as long as detecting means has laminated construction.
(a) first variant
With reference to the condenser microphone 1002 of figure 17A and 17B explanation according to second embodiment, first variant.Condenser microphone 1002 is made of diaphragm 1220 and plate 1230, and it is different from diaphragm 1020 shown in Figure 14 A and the 14B and plate 1030.Seam 1222 is formed on the periphery of diaphragm 1220 to center on central part.
The test section of condenser microphone 1002 is identical in fact with the test section of condenser microphone 1001; Therefore, omit its explanation.
The manufacture method of condenser microphone 1002 then, is described with reference to figure 18A to 18C.At first, shown in Figure 18 A, first film 1051 and second film 1052 are formed on the wafer 1050.Second film 1052 is etched with formation seam 1222 therein.
Next, shown in Figure 18 B, tertiary membrane 1053 is deposited on first film 1051 and second film 1052.In tertiary membrane 1053, form its shape and mate the recess 1253a of shape of the seam 1222 of second film 1052 in fact.
Then, shown in Fig. 1 8C, the 4th film 1054 is deposited on the tertiary membrane 1053.As a result, above the seam 1222 of the 4th film 1054, form the stage portion 1232 of shape that its shape is mated the recess 1253a of tertiary membrane 1053 in fact.Both sides in the stage portion 1232 of the 4th film 1054 form the par continuously.
Then, the 4th film is etched with a plurality of holes 1036 of formation in the par of the 4th film 1054.After this, carry out the abovementioned steps of relevant second embodiment explanation, make condenser microphone 1002 so finish.
(b) second variant
With reference to the condenser microphone 1003 of figure 19A and 19B explanation according to second embodiment, second variant.Condenser microphone 1003 comprises diaphragm 1320, plate 1330 and cavity 1311, and they are different from diaphragm 1020, plate 1030 and the cavity 1011 that is included in the condenser microphone 1001.Diaphragm 1320 is three-dimensional across plate 1330 above cavity 1311.Diaphragm 1320 uses the second square film to form, and square the 4th film formation of plate 1330 uses, and the length direction of the length direction of the 4th film and second film meets at right angle.Plate 1330 comprises stage portion 1332 and par 1333.Stage portion 1332 is configured as the edge 1320a of adaptive diaphragm 1320, makes its difference in height adapt to edge 1320 in fact and is determined, and wherein stage portion 1332 is extended from an end to the other end along edge 1320a on the short side direction of plate 1330.Par 1333 is formed on the both sides of stage portion 1332 continuously.
The test section of condenser microphone 1003 then, is described with reference to figure 19B.Guard electrode 1300 is connected to the output of operational amplifier 1100.Particularly, the lead-in wire 1110 that is connected to operational amplifier 1100 outputs is connected to guard electrode 1300.The formation of the test section of condenser microphone 1003 is identical in fact with the formation of the test section of condenser microphone 1001, except the amplification coefficient of operational amplifier 1100 is set to " 1 ".
The operation of condenser microphone 1003 then, is described.Because the amplification coefficient of operational amplifier 1100 is set at " 1 ", guard electrode 1300 and plate 1330 all are set to same potential in fact, thereby do not form parasitic capacitance in fact between guard electrode 1300 and plate 1330.On the other hand, owing to be formed on electric capacity between guard electrode 1300 and the substrate 1010 between operational amplifier 1100 and bias voltage source, it does not influence the sensitivity of condenser microphone 1003 in fact.That is, can reduce the parasitic capacitance of condenser microphone 1003.
Then, with reference to the manufacture method of figure 20A and 20B explanation condenser microphone 1003.
At first, shown in Figure 20 A and 20B, first film 1051 and second film 1052 are deposited on the wafer 1050.The manufacture method of similar condenser microphone 1001, first film 1051 and second film 1052 form by plasma CVD or decompression CVD.Then, second film 1052 is etched with the second square film 1052 of formation (forming diaphragm 1320), guard electrode 1300 and pad 1301 and 1302 (seeing Figure 19 A and 19B).
Then, shown in Figure 21 A and 21B, tertiary membrane 1053 is deposited on first film 1051 and second film 1052.The manufacture method of similar condenser microphone 1001, tertiary membrane 1053 forms by plasma CVD.The stage portion 1353 of shape that its shape is mated the edge 1352a of second film 1052 in fact is formed in the tertiary membrane 1053.
Then, shown in Figure 22 A and 22B, square cavity 1311 is formed in the wafer 1050 with the three-dimensional intersecting area between adaptive diaphragm 1320 and the plate 1330.Then, the manufacture method of similar condenser microphone 1001 is used to expose near the resist pattern of three-dimensional intersecting area between diaphragm 1320 and the plate 1330, and selectivity is removed first film 1051 and tertiary membrane 1053.After this, carry out above-mentioned steps and make condenser microphone 1003 to finish.
(c) the 3rd variant
With reference to the condenser microphone 1004 of figure 23A and 23B explanation according to second embodiment the 3rd variant.Condenser microphone 1004 is made of diaphragm 1420 and plate 1430, and they are different from the diaphragm 1020 and the plate 1030 of condenser microphone 1001.Use the second film formed diaphragm 1420 to be supported by plate 1430 via the annular space thing 1400 that uses tertiary membrane to form.Diaphragm 1420 is with other films isolation and be positioned at cavity 1011 tops.The upper end that the lower end of sept 1400 is fixed to the periphery of diaphragm 1420 and sept 1400 is fixed to the pars intermedia of plate 1430.
The manufacture method of condenser microphone 1004 then, is described with reference to figure 24A to 24C.
At first, shown in Figure 24 A, first film 1051 and second film 1052 are deposited on the wafer 1050.Then, second film 1052 is etched with second film 1052 of the formation diaphragm 1420 that is shaped.
Then, shown in Figure 24 B, tertiary membrane 1053 is deposited on first film 1051 and second film 1052.In tertiary membrane 1053, form its shape and mate the stage portion 1453a of shape of the edge 1452a of second film 1052 in fact.
Next, shown in Figure 24 C, the 4th film 1054 is deposited on the tertiary membrane 1053.As a result, in the 4th film 1054, form the stage portion 1432 of shape above the edge 1452a be positioned at second film 1052, that its shape is mated the stage portion 1453a of tertiary membrane 1053 in fact.
Then, the 4th film 1054 is etched with a plurality of holes 1036 of formation in the par of the 4th film 1054, does not wherein have hole 1036 to be positioned at stage portion 1432 places of the 4th film 1054.
After this, the manufacture method of similar condenser microphone 1001 forms cavity 1011 (seeing Figure 23 A and 23B) in wafer 1050; Then, selectivity is removed first film 1051 and tertiary membrane 1053.Owing to there is not hole 1036 to be formed in the pars intermedia of the 4th film 1054, the predetermined portions (seeing Figure 24 C shade) that is arranged in the tertiary membrane 1053 under the pars intermedia of the 4th film 1054 still keeps to form sept 1400.
In second embodiment and first and second variants, a plurality of holes are formed in the plate and equidistantly are evenly arranged on a plurality of directions.Certainly, can form a plurality of holes according to mode heterogeneous.The following describes example.
(d) the 4th variant
With reference to the condenser microphone 1005 of Figure 25 explanation according to second embodiment the 4th variant.In condenser microphone 1005, the 1036 one-tenth clathrates in a plurality of holes are arranged, but do not have hole 1036 to be positioned at stage portion 1532 places; That is, hole 1036 is formed in the plate 1530, is arranged in clathrate substantially, but does not have hole 1036 to be positioned at stage portion 1532 places.
(e) the 5th variant
With reference to the condenser microphone 1006 of Figure 26 explanation according to second embodiment the 5th variant.In condenser microphone 1006, a plurality of holes 1036 form clathrates and arrange, and make several holes 1036 not be arranged in the stage portion 1632 and keep away stage portion 1632; That is, the hole is formed in the plate 1630, is arranged in clathrate substantially, makes several holes 1036 keep away stage portion 1632.
Certainly, but the above-mentioned configuration in the hole 1036 of instructing in appropriate combination the 4th and the 5th variant.In addition, can form other holes except that 1036, it is formed in the plate according to above-mentioned arrangement, with propagation that improves sound wave and the infiltration that improves etching solution.
(f) the 6th variant
In second embodiment and its variant, a plurality of holes that all have same area are formed in the plate.Yet, can in plate, form a plurality of holes with different openings area.For example, in the condenser microphone 1007 according to second embodiment the 6th variant shown in Figure 27, two class hole 1036a and 1036b are formed in the plate 1730 with stage portion 1732.Hole 1036a is positioned near the stage portion 1732, and hole 1036b keeps away stage portion 1732, and the aperture area of its mesopore 1036a is less than the aperture area of hole 1036b.This has improved the degree of freedom of relevant hole configuration; Therefore, can suitably dispose the hole in plate 1730 by avoiding stage portion 1732 easily.
In the variant of second embodiment and it, a plurality of holes are by in the par of avoiding stage portion and being formed on plate; Therefore, the contrast hole is formed on another design of the plate in the stage portion, can improve the rigidity of plate.This has prevented because of adding external force onboard during the manufacturing process and causing plate to be damaged because of electrostatic attraction takes place between plate that is energized and diaphragm.
In second embodiment and first and second variants, a plurality of holes of plate are as the propagation path of sound wave and the infiltration path of etching solution.So, can improve the output characteristic of condenser microphone, and can simplified manufacturing technique and increase manufacturing output.
Especially can further revise the design of relevant plate among second embodiment, avoid the stage portion layout as long as a plurality of holes are formed on the plate neutralization.
At last, the present invention need not be confined to first and second embodiment; Therefore, it can be realized by any type silicon microphone in the invention scope that limits at appended claims and condenser microphone.
Claims (19)
1. silicon microphone comprises:
Its central part forms the conductive layer of diaphragm;
The week that is arranged on conductive layer is upwards to support a plurality of support sectors of conductive layer; And
The gauffer that is formed on the conductive layer neutralization and disposes across the dotted line that draws between a plurality of support sectors.
2. according to the silicon microphone of claim 1, wherein replace gauffer, the thickness that increases conductive layer by part forms thick portion in conductive layer.
3. according to the silicon microphone of claim 1, wherein reduce the thickness formation gauffer of conductive layer by part.
4. silicon microphone comprises:
Its central part forms the conductive layer of diaphragm;
The week that is arranged on conductive layer is upwards to support a plurality of support sectors of conductive layer; And
Be formed on the gauffer on the dotted line that connects a plurality of support sectors in the conductive layer.
5. according to the silicon microphone of claim 4, wherein reduce the thickness formation gauffer of conductive layer by part.
6. according to the silicon microphone of claim 4, wherein replace gauffer, the thickness that increases conductive layer by part forms thick portion in conductive layer.
7. silicon microphone comprises:
Its central part forms the conductive layer of diaphragm;
The week that is arranged on conductive layer is upwards to support a plurality of support sectors of conductive layer; And
Be formed on gauffer on the dotted line that connects a plurality of support sectors and that be configured in the outside of a plurality of support sectors in the conductive layer.
8. according to the silicon microphone of claim 7, wherein reduce the thickness formation gauffer of conductive layer by part.
9. according to the silicon microphone of claim 7, wherein replace gauffer, the thickness that increases conductive layer by part forms thick portion in conductive layer.
10. condenser microphone comprises:
Support sector;
Plate with a plurality of holes and fixed electrode, the described plate portion of being supported supports; And
Have the diaphragm of the traveling electrode of relative fixed electrode configuration, wherein diaphragm vibrates because of the sound wave that is added on it,
Wherein plate has par and the stage portion that thickness differs from one another, and wherein the par is formed on plate is run through in the both sides of stage portion and wherein a plurality of hole on thickness direction par continuously.
11. according to the condenser microphone of claim 10, wherein a plurality of holes evenly form and are arranged in the par of plate.
12. according to the condenser microphone of claim 10, arrange along many lines or along a plurality of circles by avoiding stage portion in wherein a plurality of holes.
13. according to the condenser microphone of claim 10, wherein the diaphragm crooked bend on its thickness direction that has that stage portion with plate meets makes bend prolong along stage portion.
14. according to the condenser microphone of claim 10, wherein diaphragm has seam, the edge that the stage portion of plate is formed meet seam and prolong along the edge of seam.
15. according to the condenser microphone of claim 10, wherein the stage portion of plate forms the edge that meets diaphragm and prolongs along the edge of diaphragm.
16. according to the condenser microphone of claim 10, the aperture area that wherein is formed near each hole the stage portion is less than the aperture area away from each hole of stage portion.
17. the manufacture method of a condenser microphone, this condenser microphone comprises the diaphragm that support sector, the portion of being supported support and have the plate in fixed electrode and a plurality of holes and have the traveling electrode of relative fixed electrode configuration and vibrate because of the sound wave that is added on it, and described manufacture method may further comprise the steps:
Form diaphragm with bend crooked on thickness direction by deposition;
Form the sacrifice layer that covers bend on the diaphragm by being deposited on;
By being deposited on the plate that formation has par and stage portion on the sacrifice layer, wherein the par be formed on continuously the both sides of stage portion and wherein stage portion form the bend that meets diaphragm;
Etched plate is to be formed on a plurality of holes of the par of running through plate on the thickness direction; And
The etch sacrificial layer is to form the air gap between diaphragm and the plate.
18. the manufacture method of a condenser microphone, this condenser microphone comprises the diaphragm that support sector, the portion of being supported support and have the plate in fixed electrode and a plurality of holes and have the traveling electrode of relative fixed electrode configuration and vibrate because of the sound wave that is added on it, and described manufacture method may further comprise the steps:
Form diaphragm by deposition;
The etching diaphragm is to be formed on the seam that runs through diaphragm on the thickness direction;
On diaphragm, form the sacrifice layer that covers seam;
By being deposited on the plate that formation has par and stage portion on the sacrifice layer, wherein the par be formed on continuously the both sides of stage portion and wherein stage portion form the edge of the seam that meets diaphragm;
Etched plate is to be formed on a plurality of holes of running through the par on the thickness direction; And
The etch sacrificial layer is to form the air gap between diaphragm and the plate.
19. the manufacture method of a condenser microphone, this condenser microphone comprises the diaphragm that support sector, the portion of being supported support and have the plate in fixed electrode and a plurality of holes and have the traveling electrode of relative fixed electrode configuration and vibrate because of the sound wave that is added on it, and described manufacture method may further comprise the steps:
Form diaphragm by deposition;
Form the sacrifice layer at the edge that covers diaphragm by deposition;
By being deposited on the plate that formation has par and stage portion on the sacrifice layer, wherein the par be formed on continuously the both sides of stage portion and wherein stage portion form the edge that meets diaphragm;
Etched plate is to be formed on a plurality of holes of the par of running through plate on the thickness direction; And
The etch sacrificial layer is to form the air gap between diaphragm and the plate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP196586/06 | 2006-07-19 | ||
| JP2006196586A JP4244232B2 (en) | 2006-07-19 | 2006-07-19 | Condenser microphone and manufacturing method thereof |
| JP204299/06 | 2006-07-27 |
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| Publication Number | Publication Date |
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| CN101111102A true CN101111102A (en) | 2008-01-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007101368260A Pending CN101111102A (en) | 2006-07-19 | 2007-07-17 | Silicon microphone and manufacturing method therefor |
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| JP (1) | JP4244232B2 (en) |
| CN (1) | CN101111102A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102405654A (en) * | 2009-04-20 | 2012-04-04 | 楼氏电子亚洲有限公司 | Microphone |
| CN102448002A (en) * | 2010-09-30 | 2012-05-09 | 雅马哈株式会社 | Condenser microphone array chip |
| CN104620604A (en) * | 2012-09-11 | 2015-05-13 | 欧姆龙株式会社 | Acoustic transducer |
| CN105848076A (en) * | 2015-02-02 | 2016-08-10 | 欧姆龙株式会社 | Acoustic sensor |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2182738B1 (en) * | 2008-02-20 | 2015-11-04 | Omron Corporation | Electrostatic capacitive vibrating sensor |
| JP2010155306A (en) * | 2008-12-26 | 2010-07-15 | Panasonic Corp | Microelectromechanical systems (mems) device and method of manufacturing the same |
| JP6784005B2 (en) * | 2017-03-08 | 2020-11-11 | 新日本無線株式会社 | MEMS device and its manufacturing method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58151799A (en) * | 1982-03-05 | 1983-09-09 | Matsushita Electric Ind Co Ltd | Electrostatic microphone |
| JPH03209779A (en) * | 1990-01-11 | 1991-09-12 | Mitsubishi Electric Corp | Manufacture of semiconductor pressure sensor |
| JPH0415400U (en) * | 1990-05-29 | 1992-02-07 | ||
| JPH07227000A (en) * | 1994-02-15 | 1995-08-22 | Audio Technica Corp | Static electroacoustic transducer |
| JP2000022172A (en) * | 1998-06-30 | 2000-01-21 | Matsushita Electric Ind Co Ltd | Converter and manufacture thereof |
| JP4074051B2 (en) * | 1999-08-31 | 2008-04-09 | 株式会社東芝 | Semiconductor substrate and manufacturing method thereof |
| JP2004128957A (en) * | 2002-10-03 | 2004-04-22 | Sumitomo Metal Ind Ltd | Acoustic detection mechanism |
| JP4201723B2 (en) * | 2004-02-13 | 2008-12-24 | 東京エレクトロン株式会社 | Capacitance detection type sensor element |
| JP4036866B2 (en) * | 2004-07-30 | 2008-01-23 | 三洋電機株式会社 | Acoustic sensor |
| JP2006060373A (en) * | 2004-08-18 | 2006-03-02 | Audio Technica Corp | Condenser microphone |
-
2006
- 2006-07-19 JP JP2006196586A patent/JP4244232B2/en not_active Expired - Fee Related
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- 2007-07-17 CN CNA2007101368260A patent/CN101111102A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102405654A (en) * | 2009-04-20 | 2012-04-04 | 楼氏电子亚洲有限公司 | Microphone |
| CN102448002A (en) * | 2010-09-30 | 2012-05-09 | 雅马哈株式会社 | Condenser microphone array chip |
| CN104620604A (en) * | 2012-09-11 | 2015-05-13 | 欧姆龙株式会社 | Acoustic transducer |
| CN105848076A (en) * | 2015-02-02 | 2016-08-10 | 欧姆龙株式会社 | Acoustic sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008028513A (en) | 2008-02-07 |
| JP4244232B2 (en) | 2009-03-25 |
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