KR101688954B1 - Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same - Google Patents

Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same Download PDF

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Publication number
KR101688954B1
KR101688954B1 KR1020160005097A KR20160005097A KR101688954B1 KR 101688954 B1 KR101688954 B1 KR 101688954B1 KR 1020160005097 A KR1020160005097 A KR 1020160005097A KR 20160005097 A KR20160005097 A KR 20160005097A KR 101688954 B1 KR101688954 B1 KR 101688954B1
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South Korea
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membrane
layer
support
electrode
substrate
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KR1020160005097A
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Korean (ko)
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공관호
유인근
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(주)글로벌센싱테크놀로지
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/006—Interconnection of transducer parts
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

The present invention relates to a method of manufacturing a microphone and a microphone, which comprises a membrane including a driving electrode and a back plate including a fixed electrode, and the two electrodes are mechanically connected to the substrate.
The improved microphone manufacturing method of the present invention improves the structure of supporting the back plate and the structure supporting the membrane to improve the quality of the process of manufacturing the microphones and improve the performance of the microphones.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a micro-

The present invention relates to a microphone having improved membrane supporting structure and a method of manufacturing the same. More particularly, the present invention relates to a microphone having a membrane vibrating with an external sound pressure and a back plate disposed parallel to the membrane, The present invention relates to a microphone for measuring a sound pressure using a change in electrostatic capacity charged to electrodes and a method for manufacturing the microphone.

Microphones have been widely applied to a variety of electronic devices such as mobile, desktop, and ear-sets, and the demand is expected to increase explosively in the coming days of the Internet of Thing. Further, in accordance with the miniaturization trend of electronic devices, a microphone is required to be smaller and cheaper, and a MEMS (micro electro mechanical system) method is most advantageous in meeting the trend of such a market. MEMS microphones, which are currently in production, are mostly capacitive.

An example of an acoustic device having such a capacitive microphone structure is disclosed in Korean Patent Laid-Open Publication No. 2011-125584.

Korean Patent Laid-Open Publication No. 10-2014-0067238 discloses a method for manufacturing such a microphone. One example of the improved microphone manufacturing method of the conventional membrane supporting structure is a method of forming an electrode by laminating doped-polysilicon on undoped-polysilicon to form electrodes on a membrane and a backplate of a microphone, respectively Respectively. In this method, two layers of different characteristics, such as undoped polysilicon and doped polysilicon, are stacked and unnecessary portions are etched. In practice, complicated and inefficient problems are encountered in practical applications there was. The manufacturing cost of the microphone is increased due to such a process problem.

SUMMARY OF THE INVENTION The present invention has been devised to solve the problems as described above, and it is an object of the present invention to provide a method of manufacturing a microphone of high quality at a relatively low cost.

According to an aspect of the present invention, there is provided an apparatus for detecting an acoustic wave using a change in capacitance between a first electrode formed on a membrane and a second electrode formed on a membrane, the air gap being disposed between the membrane and the back plate, The method comprising the steps of: (a) forming a first sacrificial layer on an upper surface of a substrate; (b) a membrane outer circumferential portion that exposes a surface of the substrate by etching the first sacrificial layer so as to surround the outer circumference of the region where the membrane is to be formed, and a membrane outer circumferential portion disposed at a position spaced inward relative to the membrane outer circumferential portion, Etching the first sacrificial layer to expose a surface of the substrate along an inner diameter to form a membrane support groove; (c) depositing undoped-polysilicon on the upper surface of the substrate exposed through the membrane periphery, the membrane support grooves, and the upper surface of the first sacrificial layer to form a first silicon layer, Forming a membrane support fixture formed of the first sacrificial layer between the first sacrificial layer and the second sacrificial layer; (d) doping a region of the first electrode to form the first electrode in the first silicon layer to have conductivity; (e) etching the first silicon layer to form a membrane support portion supporting the membrane along the inner periphery of the membrane periphery, so that the membrane support portion remains inside the membrane support portion; (f) depositing a second sacrificial layer on the first silicon layer after performing the step (e); (g) depositing an undoped polysilicon layer on the second sacrificial layer to form a second silicon layer; (h) doping the second silicon layer to form a second electrode having conductivity in the second silicon layer; (i) etching the second silicon layer doped in step (h) to form the second electrode; (j) a back plate peripheral portion for exposing the surface of the substrate to etch the second sacrificial layer so as to surround the outer periphery of the region where the back plate is to be formed, to form a back plate supporting portion supporting the back plate with respect to the substrate, ; (k) depositing a nitride on the second sacrificial layer, the outer periphery of the backplate, and the second electrode to form a support layer, and forming the backplate support; (l) etching the support layer and the second electrode of the plurality of acoustic hole regions to form a plurality of acoustic holes in an area enclosed by the backplate support; (m) forming a cavity by removing a portion of the substrate in an area surrounded by the membrane support at a lower portion of the membrane; And (n) removing the first sacrificial layer exposed through the cavity and removing the second sacrificial layer exposed through the acoustic hole.

Further, the present invention provides a semiconductor device comprising: a substrate; A membrane disposed above the substrate; A membrane support for supporting an outer periphery of the membrane with respect to the substrate; A back plate disposed above the membrane; A back plate support portion supporting an outer periphery of the back plate with respect to the substrate; A second electrode formed on the back plate; And a first electrode formed on the membrane, wherein the membrane support comprises: a membrane supporting and securing part made of an oxide material, which is deposited on an upper surface of the substrate along an outer periphery of the membrane; and a membrane supporting part And a nitride membrane supporting the membrane along the outer periphery of the membrane.

The improved microphone and its manufacturing method of the present invention improves the structure for supporting the back plate and the structure for supporting the membrane to improve the quality of the process for manufacturing the microphones and improve the performance of the microphones have.

1 to 15 are cross-sectional views illustrating a method of manufacturing a microphone having an improved membrane supporting structure according to an embodiment of the present invention.
FIG. 16 is an exploded perspective view of a microphone fabricated by the improved microphone manufacturing method of the membrane support structure shown in FIGS. 1-15. FIG.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a method of manufacturing a microphone having an improved membrane supporting structure according to the present invention will be described in detail with reference to the accompanying drawings.

1 to 15 are cross-sectional views illustrating a method of manufacturing a microphone having an improved membrane supporting structure according to an embodiment of the present invention.

The improved microphone manufacturing method of the membrane supporting structure according to the present invention is for manufacturing a microphone having a structure as shown in FIG. A membrane support 220 is formed on the substrate 100 to support the membrane 200. The membrane support 220 is securely secured to the substrate by the membrane support fixture 503. A first electrode 201 is formed on the membrane 200. The membrane 200 is vibrated by the negative pressure transmitted from the outside. A back plate 300 is disposed above the membrane 200. The back plate 300 is supported by the back plate support 310 with respect to the substrate 100. A plurality of acoustic holes 320 are formed in the back plate 300. External sound pressure is transmitted to the membrane 200 through the acoustic hole 320 of the back plate 300. A second electrode 301 is formed on the back plate 300. The distance between the first electrode 201 and the second electrode 301 changes as the membrane 200 vibrates and consequently the capacitance between the first electrode 201 and the second electrode 301 changes. The change in the sound pressure can be converted into an electrical signal using such a change in capacitance. On the other hand, a part of the substrate 100 is removed on the lower side of the membrane 200 to form the cavity 101.

Hereinafter, a method of manufacturing a microphone having the above-described structure will be described.

First, a first sacrificial layer is formed on the upper surface of the substrate as shown in FIG. 1 (step (a)). A first sacrificial layer 510 is formed by depositing an insulating layer oxide film on a silicon wafer substrate 100.

Next, as shown in FIG. 2, a portion of the first sacrificial layer 510 is etched to surround the outer circumference of the region where the membrane 200 is to be formed, thereby forming a membrane outer circumferential portion 501 that exposes the surface of the substrate ( b) step). The first sacrificial layer 510 is removed to expose the substrate 100 at the position where the membrane supporting part 220 supporting the membrane 200 is to be formed, thereby forming the membrane outer circumferential part 501. The membrane outer circumferential portion 501 is formed in order to form a membrane support portion 220 on the substrate 100 to support the membrane 200. The membrane outer circumferential portion 501 is formed in a circular or nearly circular shape along the circumferential direction so as to form the membrane support portion 220 that supports the membrane 200 so that the membrane 200 is effectively oscillated.

A membrane support groove 502 is also formed when the membrane outer circumferential portion 501 is formed. The membrane support grooves 502 are formed by etching the first sacrificial layer 510 so as to expose the surface of the substrate along the inner diameter of the membrane outer circumferential portion 501 at a position spaced inward with respect to the membrane outer circumferential portion 501. That is, the membrane support groove 502 is formed along the inner periphery of the membrane periphery 501 in parallel with the membrane periphery 501.

3, undoped-polysilicon is deposited on the upper surface of the substrate 100 exposed through the membrane outer circumferential portion 501 and the upper surface of the first sacrificial layer 510 to form a first silicon layer 610) (step (c)). At this time, undoped-polysilicon is also laminated on the membrane support grooves 502. The undoped polysilicon layer is stacked to form a membrane supporting portion 503 of the first sacrificial layer 510 between the membrane outer circumferential portion 501 and the membrane supporting groove 502. The first silicon layer 610 constitutes the membrane 200, the membrane supporting part 220 and the membrane supporting and securing part 503.

Next, as shown in FIG. 4, a region of the first electrode 201 is doped to form the first electrode 201 in the first silicon layer 610 (step (d)). In this embodiment, the first silicon layer 610 is doped by ion implantation. The first silicon layer 610 at the position where the first electrode 201 is to be formed by such doping is made conductive. When the region of the first electrode 201 is doped, the region of the electrode pad is also doped as shown in FIG. The electrode pads are formed so that they can be connected to external circuits by wire bonding in the future.

5, the first silicon layer 610 is etched to form a membrane supporting part 220 for supporting the membrane 200 at the positions of the membrane 200 and the membrane outer peripheral part 501 ) step). That is, the remaining region of the first silicon layer 610 except the region to be the membrane 200, the membrane support portion 220, and the electrode pad 401 is removed by etching. This completes the structure of the membrane 200. The membrane 200 is disposed at a spaced-apart height relative to the substrate and along its edges the membrane support 220 is connected to support the membrane 200 relative to the substrate.

Next, a step of laminating the second sacrificial layer 520 on the first silicon layer 610 is performed as shown in FIG. 6 (step (f)). The second sacrificial layer 520 constitutes an air gap 420 between the membrane 200 and the backplate 300. And the second sacrificial layer 520 is formed by laminating oxide films.

7, a second silicon layer 620 is formed by laminating undoped polysilicon on the second sacrificial layer 520 (step (g)).

the second silicon layer 620 formed in step (g) is doped to be conductive so as to prepare the second electrode 301 (step (h)). Similar to the first silicon layer 610 described above, a second silicon layer 620 for forming the second electrode 301 by laminating undoped-polysilicon is provided and doped by ion implantation to provide conductivity .

8, in order to form a dimple 330 for preventing contact between the back plate 300 and the membrane 200, the second silicon 321 at the position 331 where the dimples 330 are to be formed, The layer 620 and a portion of the second sacrificial layer 520 are etched (step (o)). The dimple 330 is an insulating structure formed on the back plate 300 so as to protrude toward the first electrode 201. The structure is provided to prevent the first electrode 201 from contacting the second electrode 301 due to a large vibration of the membrane 200 during use of the microphone.

Next, as shown in FIG. 9, the doped second silicon layer 620 is etched in step (g) to form a second electrode 301 (step (i)).

As described above, when the structure of the second electrode 301 is completed, a structure for supporting the second electrode 301 is provided to complete the backplate 300.

10, in order to form a back plate support portion 310 for supporting the back plate 300 with respect to the substrate 100, a second sacrificial layer 310 is formed so as to surround the periphery of the region where the back plate 300 is to be formed, The layer 520 is etched to form two rows of backplate peripheral portions 311 exposing the surface of the substrate 100 (step (j)). The second sacrificial layer 520 is etched so as to surround the membrane 200 and the back plate 300 at a position relatively farther away from the membrane supporter 220 to expose the substrate 100 positioned below the membrane sacrifice layer 520. The second sacrificial layer 520 is etched to a depth at which the substrate 100 is exposed to thereby provide a base on which the backplate support 310 capable of supporting the backplate 300 with respect to the substrate 100 is formed do.

In this state, a nitride layer is deposited as shown in FIG. 11 to provide a support layer 701 for forming the backplate support 310 and the backplate 300 (step (k)). At this time, the dimple 330 is formed by depositing nitride on the etched region in the step (o). In this manner, the back plate 300 and the back plate supporting portion 310 are formed of the supporting layer 701 made of a nitride structure so that the second electrode 301 can be effectively fixed and supported while being insulated from the substrate 100 There is an advantage. In particular, there is an advantage that the back plate 300 can be stably supported by the back plate supporting portion 310 having the structure in which the second sacrificial layer is filled between the outer peripheral portions 311 of the back plate filled with nitrides. Further, due to the backplate peripheral part 311 made of nitride and having the insulating property and the good selectivity to the sacrificial layer, and the second sacrificial layer 520 disposed therebetween, the back plate 300 and the membrane 200 When the second sacrificial layer 520 of the backplate support 310 is removed, the structures outside the backplate support 310 can be stably retained without being affected.

Next, a process of forming the electrode pads 401 and 402 for connecting the first electrode 201 and the second electrode 301 to an external circuit will be described.

12, a part of the supporting layer 701 or the supporting layer 701 and the part of the second sacrificing layer 520 are etched to form the first silicon layer 610 of the region where the electrode pads 401 and 402 are to be formed, And the second silicon layer 620 are exposed (step (p)). A portion of the first silicon layer 610 is exposed by etching a part of the support layer 701 and the second sacrificial layer 520 to form an area where the electrode pad 401 connected to the first electrode 201 is to be formed do. In the case of the electrode pad 402 connected to the second electrode 301, only a part of the supporting layer 701 is etched.

12, metal layers for forming the electrode pads 401 and 402 are stacked and then etched to form electrode pads 401 and 402 electrically connected to the first electrode 201 and the second electrode 301, 402 are formed (step (q)).

Next, a process of forming the acoustic holes 320 will be described with reference to FIG. The support layer 701 and the second electrode 301 are etched to form acoustic holes 320 at a plurality of points inside the region surrounded by the backplate support 310 as shown in FIG. ) step). The external sound pressure is transmitted to the membrane 200 inside the back plate 300 through the acoustic hole 320 as described above.

14, a part of the substrate 100 in the area surrounded by the membrane supporting parts 220 of the lower part of the membrane 200 is removed to form the cavity 101, (Step (m)). The cavity 101 formed by etching the rear surface of the substrate 100 serves as a back chamber of the microphone.

Next, as shown in FIG. 15, the first sacrificial layer 510 and the second sacrificial layer 520 are removed through an etching process so that the membrane 200 can vibrate (Step (n) ). The first sacrificial layer 510 is etched through the cavity 101 and the second sacrificial layer 520 is etched through the plurality of acoustical holes 320 of the back plate 300. The first sacrificial layer 510 and the second sacrificial layer 520 are formed of an insulator oxide, and are etched by HF vapor (HF vapor). The air gap 420 is formed between the first electrode 201 and the second electrode 301 by removing the second sacrificial layer 520 and the dimple 330 passing through the second electrode 301 is formed between the first electrode 201 and the second electrode 301, As shown in Fig. On the other hand, as described above, the supporting layer 701 is formed by using the nitride having a high selectivity relative to the sacrificial layer, thereby forming a chamber surrounded by the supporting layer 701, and the membrane 200 is disposed therein . Since the inner space of the chamber is surrounded by the support layer 701, it is possible to prevent the surrounding structure from being etched in the process of removing the first sacrificial layer 510 and the second sacrificial layer 520. The structure of such a nitride support layer 701 has an advantage that the process yield can be improved.

Also, in this embodiment, there is no fear that the impurity of the second electrode 301 is diffused into the supporting layer 701 during the heat treatment process. Accordingly, the improved microphone manufacturing method according to the present invention has an advantage that the yield is improved and the quality of the product is improved.

As described above, the membrane supporting groove 502 is formed in step (b), and the membrane supporting groove 502 is also laminated with the undoped polysilicon to form the membrane outer peripheral part 501 and the membrane supporting groove 502, The membrane support part 220 having the membrane supporting and securing part 503 formed between the membrane supporting part 502 and the membrane supporting part 502 is advantageous in that the membrane 200 can be stably supported.

While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments.

For example, the case where the dimple 330 is formed to prevent contact between the first electrode 201 and the second electrode 301 has been described as an example. However, in some cases, the dimple may not be formed It is possible.

In addition, the structure of the membrane 200 and the back plate 300 may be variously modified.

Further, the support layer 701 is formed by depositing nitride, but it is also possible to construct the support layer using another insulating material.

Meanwhile, the microphone of the present invention has the same structure as the microphone manufactured by the above-described microphone manufacturing method.

As described above, the backplate supporting portion 310 formed in a two-column structure is formed in a structure in which an insulating layer oxide film is disposed between the nitride films. That is, the backplate support 310 is formed such that the backplate support 310 surrounds the outer periphery of the backplate 300 in a state in which the nitride oxide film deposited on the substrate 100 covers the nitride film of two rows . Even when the second sacrificial layer 520 is removed and the air gap 420 is formed by the above structure, the backplate 300 is effectively prevented from being etched or damaged, ) Can be stably supported.

As described above, a membrane supporting and fixing part 503 made of an oxide film is formed on the outer side of the membrane supporting groove 502, and the membrane supporting part 503 is covered with the nitriding membrane. The membrane support 220 can be structured to support the membrane 200 in a stable manner. Particularly, the structure of the membrane support part 220 has an advantage of improving the durability of the microphones by dispersing or canceling the internal stress that may be caused by the surrounding structure of the membrane 200 or the membrane support part 220 .

100: substrate 200: membrane
502: Membrane support groove 503: Membrane support fixture
220: membrane support 201: first electrode
300: back plate 310: back plate support
311: back plate outer peripheral portion 101: cavity
301: second electrode 320: acoustic hole
330: Dimple 401, 402: Electrode pad
510: first sacrificial layer 520: second sacrificial layer
610: first silicon layer 620: second silicon layer
501: Membrane outer periphery 701: Support layer

Claims (3)

A method of manufacturing a microphone having an air gap between a membrane and a back plate and sensing sound using a change in capacitance between a first electrode formed on the membrane and a second electrode formed on the back plate,
(a) forming a first sacrificial layer on an upper surface of a substrate;
(b) a membrane outer circumferential portion that exposes a surface of the substrate by etching the first sacrificial layer so as to surround the outer circumference of the region where the membrane is to be formed, and a membrane outer circumferential portion disposed at a position spaced inward relative to the outer circumferential portion of the membrane, Etching the first sacrificial layer to expose a surface of the substrate along an inner diameter to form a membrane support groove;
(c) depositing undoped-polysilicon on the upper surface of the substrate exposed through the membrane periphery, the membrane support grooves, and the upper surface of the first sacrificial layer to form a first silicon layer, Forming a membrane support fixture formed of the first sacrificial layer between the first sacrificial layer and the second sacrificial layer;
(d) doping a region of the first electrode to form the first electrode in the first silicon layer to have conductivity;
(e) etching the first silicon layer to form a membrane support portion supporting the membrane along the inner periphery of the membrane periphery, so that the membrane support portion remains inside the membrane support portion;
(f) depositing a second sacrificial layer on the first silicon layer after performing the step (e);
(g) depositing an undoped polysilicon layer on the second sacrificial layer to form a second silicon layer;
(h) doping the second silicon layer to form a second electrode having conductivity in the second silicon layer;
(i) etching the second silicon layer doped in step (h) to form the second electrode;
(j) a backplate outer periphery for exposing the surface of the substrate to etch the second sacrificial layer so as to surround the outer periphery of the area where the backplate is to be formed, to form a backplate support for supporting the backplate relative to the substrate, ;
(k) depositing a nitride on the second sacrificial layer, the outer periphery of the backplate, and the second electrode to form a support layer and forming the backplate support;
(l) etching the support layer and the second electrode of the plurality of acoustic hole regions to form a plurality of acoustic holes in an area enclosed by the backplate support;
(m) forming a cavity by removing a portion of the substrate in an area surrounded by the membrane support at a lower portion of the membrane; And
(n) removing the first sacrificial layer exposed through the cavity and removing the second sacrificial layer exposed through the acoustical hole; and . The method according to claim 1,
(p) depositing the nitride by the step (k) to form a support layer, and etching the support layer or the support layer and a part of the second sacrifice layer to form the first silicon layer And exposing a second silicon layer; And
(q) stacking a metal layer for forming the electrode pad to form an electrode pad electrically connected to the first electrode and the second electrode. Way. Board;
A membrane disposed above the substrate;
A membrane support for supporting an outer periphery of the membrane with respect to the substrate;
A back plate disposed above the membrane;
A back plate support portion supporting an outer periphery of the back plate with respect to the substrate;
A second electrode formed on the back plate; And
And a first electrode formed on the membrane,
The membrane supporter includes a membrane support fixture made of an oxide material deposited on an upper surface of the substrate along the periphery of the membrane and a nitride membrane supporting the membrane supporter along the periphery of the membrane while being covered with the substrate Wherein the membrane support structure is configured such that the membrane support structure is configured to provide a membrane support structure.
KR1020160005097A 2016-01-15 2016-01-15 Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same KR101688954B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101893486B1 (en) * 2017-04-27 2018-08-30 주식회사 글로벌센싱테크놀로지 Rigid Backplate Structure Microphone and Method of Manufacturing the Same
US20190098418A1 (en) * 2017-09-22 2019-03-28 Robert Bosch Gmbh MEMS Microphone System

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JP2007201877A (en) * 2006-01-27 2007-08-09 Yamaha Corp Capacitor microphone and method for manufacturing capacitor microphone
KR101058475B1 (en) * 2010-05-14 2011-08-24 한국기계연구원 Mems microphone based on graphene membrane and fabrication method therefor
US20150063608A1 (en) * 2013-08-30 2015-03-05 Robert Bosch Gmbh Capacitive mems element including a pressure-sensitive diaphragm
US9199837B2 (en) * 2010-05-11 2015-12-01 Omron Corporation Acoustic sensor and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
JP2007201877A (en) * 2006-01-27 2007-08-09 Yamaha Corp Capacitor microphone and method for manufacturing capacitor microphone
US9199837B2 (en) * 2010-05-11 2015-12-01 Omron Corporation Acoustic sensor and method of manufacturing the same
KR101058475B1 (en) * 2010-05-14 2011-08-24 한국기계연구원 Mems microphone based on graphene membrane and fabrication method therefor
US20150063608A1 (en) * 2013-08-30 2015-03-05 Robert Bosch Gmbh Capacitive mems element including a pressure-sensitive diaphragm

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101893486B1 (en) * 2017-04-27 2018-08-30 주식회사 글로벌센싱테크놀로지 Rigid Backplate Structure Microphone and Method of Manufacturing the Same
WO2018199554A1 (en) * 2017-04-27 2018-11-01 (주)글로벌센싱테크놀로지 Microphone having rigid backplate structure and method for manufacturing same
US20190098418A1 (en) * 2017-09-22 2019-03-28 Robert Bosch Gmbh MEMS Microphone System
WO2019060021A1 (en) * 2017-09-22 2019-03-28 Robert Bosch Gmbh Mems microphone system
CN111108758A (en) * 2017-09-22 2020-05-05 罗伯特·博世有限公司 MEMS microphone system
US11012789B2 (en) 2017-09-22 2021-05-18 Akustica, Inc. MEMS microphone system
CN111108758B (en) * 2017-09-22 2022-01-18 罗伯特·博世有限公司 MEMS microphone system

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