KR101688954B1 - Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same - Google Patents
Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same Download PDFInfo
- Publication number
- KR101688954B1 KR101688954B1 KR1020160005097A KR20160005097A KR101688954B1 KR 101688954 B1 KR101688954 B1 KR 101688954B1 KR 1020160005097 A KR1020160005097 A KR 1020160005097A KR 20160005097 A KR20160005097 A KR 20160005097A KR 101688954 B1 KR101688954 B1 KR 101688954B1
- Authority
- KR
- South Korea
- Prior art keywords
- membrane
- layer
- support
- electrode
- substrate
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
The present invention relates to a method of manufacturing a microphone and a microphone, which comprises a membrane including a driving electrode and a back plate including a fixed electrode, and the two electrodes are mechanically connected to the substrate.
The improved microphone manufacturing method of the present invention improves the structure of supporting the back plate and the structure supporting the membrane to improve the quality of the process of manufacturing the microphones and improve the performance of the microphones.
Description
The present invention relates to a microphone having improved membrane supporting structure and a method of manufacturing the same. More particularly, the present invention relates to a microphone having a membrane vibrating with an external sound pressure and a back plate disposed parallel to the membrane, The present invention relates to a microphone for measuring a sound pressure using a change in electrostatic capacity charged to electrodes and a method for manufacturing the microphone.
Microphones have been widely applied to a variety of electronic devices such as mobile, desktop, and ear-sets, and the demand is expected to increase explosively in the coming days of the Internet of Thing. Further, in accordance with the miniaturization trend of electronic devices, a microphone is required to be smaller and cheaper, and a MEMS (micro electro mechanical system) method is most advantageous in meeting the trend of such a market. MEMS microphones, which are currently in production, are mostly capacitive.
An example of an acoustic device having such a capacitive microphone structure is disclosed in Korean Patent Laid-Open Publication No. 2011-125584.
Korean Patent Laid-Open Publication No. 10-2014-0067238 discloses a method for manufacturing such a microphone. One example of the improved microphone manufacturing method of the conventional membrane supporting structure is a method of forming an electrode by laminating doped-polysilicon on undoped-polysilicon to form electrodes on a membrane and a backplate of a microphone, respectively Respectively. In this method, two layers of different characteristics, such as undoped polysilicon and doped polysilicon, are stacked and unnecessary portions are etched. In practice, complicated and inefficient problems are encountered in practical applications there was. The manufacturing cost of the microphone is increased due to such a process problem.
SUMMARY OF THE INVENTION The present invention has been devised to solve the problems as described above, and it is an object of the present invention to provide a method of manufacturing a microphone of high quality at a relatively low cost.
According to an aspect of the present invention, there is provided an apparatus for detecting an acoustic wave using a change in capacitance between a first electrode formed on a membrane and a second electrode formed on a membrane, the air gap being disposed between the membrane and the back plate, The method comprising the steps of: (a) forming a first sacrificial layer on an upper surface of a substrate; (b) a membrane outer circumferential portion that exposes a surface of the substrate by etching the first sacrificial layer so as to surround the outer circumference of the region where the membrane is to be formed, and a membrane outer circumferential portion disposed at a position spaced inward relative to the membrane outer circumferential portion, Etching the first sacrificial layer to expose a surface of the substrate along an inner diameter to form a membrane support groove; (c) depositing undoped-polysilicon on the upper surface of the substrate exposed through the membrane periphery, the membrane support grooves, and the upper surface of the first sacrificial layer to form a first silicon layer, Forming a membrane support fixture formed of the first sacrificial layer between the first sacrificial layer and the second sacrificial layer; (d) doping a region of the first electrode to form the first electrode in the first silicon layer to have conductivity; (e) etching the first silicon layer to form a membrane support portion supporting the membrane along the inner periphery of the membrane periphery, so that the membrane support portion remains inside the membrane support portion; (f) depositing a second sacrificial layer on the first silicon layer after performing the step (e); (g) depositing an undoped polysilicon layer on the second sacrificial layer to form a second silicon layer; (h) doping the second silicon layer to form a second electrode having conductivity in the second silicon layer; (i) etching the second silicon layer doped in step (h) to form the second electrode; (j) a back plate peripheral portion for exposing the surface of the substrate to etch the second sacrificial layer so as to surround the outer periphery of the region where the back plate is to be formed, to form a back plate supporting portion supporting the back plate with respect to the substrate, ; (k) depositing a nitride on the second sacrificial layer, the outer periphery of the backplate, and the second electrode to form a support layer, and forming the backplate support; (l) etching the support layer and the second electrode of the plurality of acoustic hole regions to form a plurality of acoustic holes in an area enclosed by the backplate support; (m) forming a cavity by removing a portion of the substrate in an area surrounded by the membrane support at a lower portion of the membrane; And (n) removing the first sacrificial layer exposed through the cavity and removing the second sacrificial layer exposed through the acoustic hole.
Further, the present invention provides a semiconductor device comprising: a substrate; A membrane disposed above the substrate; A membrane support for supporting an outer periphery of the membrane with respect to the substrate; A back plate disposed above the membrane; A back plate support portion supporting an outer periphery of the back plate with respect to the substrate; A second electrode formed on the back plate; And a first electrode formed on the membrane, wherein the membrane support comprises: a membrane supporting and securing part made of an oxide material, which is deposited on an upper surface of the substrate along an outer periphery of the membrane; and a membrane supporting part And a nitride membrane supporting the membrane along the outer periphery of the membrane.
The improved microphone and its manufacturing method of the present invention improves the structure for supporting the back plate and the structure for supporting the membrane to improve the quality of the process for manufacturing the microphones and improve the performance of the microphones have.
1 to 15 are cross-sectional views illustrating a method of manufacturing a microphone having an improved membrane supporting structure according to an embodiment of the present invention.
FIG. 16 is an exploded perspective view of a microphone fabricated by the improved microphone manufacturing method of the membrane support structure shown in FIGS. 1-15. FIG.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a method of manufacturing a microphone having an improved membrane supporting structure according to the present invention will be described in detail with reference to the accompanying drawings.
1 to 15 are cross-sectional views illustrating a method of manufacturing a microphone having an improved membrane supporting structure according to an embodiment of the present invention.
The improved microphone manufacturing method of the membrane supporting structure according to the present invention is for manufacturing a microphone having a structure as shown in FIG. A
Hereinafter, a method of manufacturing a microphone having the above-described structure will be described.
First, a first sacrificial layer is formed on the upper surface of the substrate as shown in FIG. 1 (step (a)). A first
Next, as shown in FIG. 2, a portion of the first
A
3, undoped-polysilicon is deposited on the upper surface of the
Next, as shown in FIG. 4, a region of the
5, the
Next, a step of laminating the second
7, a
the
8, in order to form a
Next, as shown in FIG. 9, the doped
As described above, when the structure of the
10, in order to form a back
In this state, a nitride layer is deposited as shown in FIG. 11 to provide a
Next, a process of forming the
12, a part of the supporting
12, metal layers for forming the
Next, a process of forming the
14, a part of the
Next, as shown in FIG. 15, the first
Also, in this embodiment, there is no fear that the impurity of the
As described above, the
While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments.
For example, the case where the
In addition, the structure of the
Further, the
Meanwhile, the microphone of the present invention has the same structure as the microphone manufactured by the above-described microphone manufacturing method.
As described above, the
As described above, a membrane supporting and fixing
100: substrate 200: membrane
502: Membrane support groove 503: Membrane support fixture
220: membrane support 201: first electrode
300: back plate 310: back plate support
311: back plate outer peripheral portion 101: cavity
301: second electrode 320: acoustic hole
330:
510: first sacrificial layer 520: second sacrificial layer
610: first silicon layer 620: second silicon layer
501: Membrane outer periphery 701: Support layer
Claims (3)
(a) forming a first sacrificial layer on an upper surface of a substrate;
(b) a membrane outer circumferential portion that exposes a surface of the substrate by etching the first sacrificial layer so as to surround the outer circumference of the region where the membrane is to be formed, and a membrane outer circumferential portion disposed at a position spaced inward relative to the outer circumferential portion of the membrane, Etching the first sacrificial layer to expose a surface of the substrate along an inner diameter to form a membrane support groove;
(c) depositing undoped-polysilicon on the upper surface of the substrate exposed through the membrane periphery, the membrane support grooves, and the upper surface of the first sacrificial layer to form a first silicon layer, Forming a membrane support fixture formed of the first sacrificial layer between the first sacrificial layer and the second sacrificial layer;
(d) doping a region of the first electrode to form the first electrode in the first silicon layer to have conductivity;
(e) etching the first silicon layer to form a membrane support portion supporting the membrane along the inner periphery of the membrane periphery, so that the membrane support portion remains inside the membrane support portion;
(f) depositing a second sacrificial layer on the first silicon layer after performing the step (e);
(g) depositing an undoped polysilicon layer on the second sacrificial layer to form a second silicon layer;
(h) doping the second silicon layer to form a second electrode having conductivity in the second silicon layer;
(i) etching the second silicon layer doped in step (h) to form the second electrode;
(j) a backplate outer periphery for exposing the surface of the substrate to etch the second sacrificial layer so as to surround the outer periphery of the area where the backplate is to be formed, to form a backplate support for supporting the backplate relative to the substrate, ;
(k) depositing a nitride on the second sacrificial layer, the outer periphery of the backplate, and the second electrode to form a support layer and forming the backplate support;
(l) etching the support layer and the second electrode of the plurality of acoustic hole regions to form a plurality of acoustic holes in an area enclosed by the backplate support;
(m) forming a cavity by removing a portion of the substrate in an area surrounded by the membrane support at a lower portion of the membrane; And
(n) removing the first sacrificial layer exposed through the cavity and removing the second sacrificial layer exposed through the acoustical hole; and .
(p) depositing the nitride by the step (k) to form a support layer, and etching the support layer or the support layer and a part of the second sacrifice layer to form the first silicon layer And exposing a second silicon layer; And
(q) stacking a metal layer for forming the electrode pad to form an electrode pad electrically connected to the first electrode and the second electrode. Way.
A membrane disposed above the substrate;
A membrane support for supporting an outer periphery of the membrane with respect to the substrate;
A back plate disposed above the membrane;
A back plate support portion supporting an outer periphery of the back plate with respect to the substrate;
A second electrode formed on the back plate; And
And a first electrode formed on the membrane,
The membrane supporter includes a membrane support fixture made of an oxide material deposited on an upper surface of the substrate along the periphery of the membrane and a nitride membrane supporting the membrane supporter along the periphery of the membrane while being covered with the substrate Wherein the membrane support structure is configured such that the membrane support structure is configured to provide a membrane support structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160005097A KR101688954B1 (en) | 2016-01-15 | 2016-01-15 | Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160005097A KR101688954B1 (en) | 2016-01-15 | 2016-01-15 | Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same |
Publications (1)
Publication Number | Publication Date |
---|---|
KR101688954B1 true KR101688954B1 (en) | 2016-12-22 |
Family
ID=57723424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160005097A KR101688954B1 (en) | 2016-01-15 | 2016-01-15 | Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101688954B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101893486B1 (en) * | 2017-04-27 | 2018-08-30 | 주식회사 글로벌센싱테크놀로지 | Rigid Backplate Structure Microphone and Method of Manufacturing the Same |
US20190098418A1 (en) * | 2017-09-22 | 2019-03-28 | Robert Bosch Gmbh | MEMS Microphone System |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201877A (en) * | 2006-01-27 | 2007-08-09 | Yamaha Corp | Capacitor microphone and method for manufacturing capacitor microphone |
KR101058475B1 (en) * | 2010-05-14 | 2011-08-24 | 한국기계연구원 | Mems microphone based on graphene membrane and fabrication method therefor |
US20150063608A1 (en) * | 2013-08-30 | 2015-03-05 | Robert Bosch Gmbh | Capacitive mems element including a pressure-sensitive diaphragm |
US9199837B2 (en) * | 2010-05-11 | 2015-12-01 | Omron Corporation | Acoustic sensor and method of manufacturing the same |
-
2016
- 2016-01-15 KR KR1020160005097A patent/KR101688954B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007201877A (en) * | 2006-01-27 | 2007-08-09 | Yamaha Corp | Capacitor microphone and method for manufacturing capacitor microphone |
US9199837B2 (en) * | 2010-05-11 | 2015-12-01 | Omron Corporation | Acoustic sensor and method of manufacturing the same |
KR101058475B1 (en) * | 2010-05-14 | 2011-08-24 | 한국기계연구원 | Mems microphone based on graphene membrane and fabrication method therefor |
US20150063608A1 (en) * | 2013-08-30 | 2015-03-05 | Robert Bosch Gmbh | Capacitive mems element including a pressure-sensitive diaphragm |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101893486B1 (en) * | 2017-04-27 | 2018-08-30 | 주식회사 글로벌센싱테크놀로지 | Rigid Backplate Structure Microphone and Method of Manufacturing the Same |
WO2018199554A1 (en) * | 2017-04-27 | 2018-11-01 | (주)글로벌센싱테크놀로지 | Microphone having rigid backplate structure and method for manufacturing same |
US20190098418A1 (en) * | 2017-09-22 | 2019-03-28 | Robert Bosch Gmbh | MEMS Microphone System |
WO2019060021A1 (en) * | 2017-09-22 | 2019-03-28 | Robert Bosch Gmbh | Mems microphone system |
CN111108758A (en) * | 2017-09-22 | 2020-05-05 | 罗伯特·博世有限公司 | MEMS microphone system |
US11012789B2 (en) | 2017-09-22 | 2021-05-18 | Akustica, Inc. | MEMS microphone system |
CN111108758B (en) * | 2017-09-22 | 2022-01-18 | 罗伯特·博世有限公司 | MEMS microphone system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101578542B1 (en) | Method of Manufacturing Microphone | |
KR101711444B1 (en) | Microphone and Method of Manufacturing Microphone | |
US8422702B2 (en) | Condenser microphone having flexure hinge diaphragm and method of manufacturing the same | |
KR102486586B1 (en) | MEMS microphone and method of fabricating the same | |
KR100899482B1 (en) | Silicon microphone and manufacturing method therefor | |
US8509462B2 (en) | Piezoelectric micro speaker including annular ring-shaped vibrating membranes and method of manufacturing the piezoelectric micro speaker | |
US10616687B2 (en) | Microphone and manufacturing method thereof | |
US10313799B2 (en) | Microphone and method for manufacturing the same | |
KR20080034407A (en) | Electrostatic pressure transducer and manufacturing method therefor | |
KR20090015834A (en) | Condenser microphone | |
US9693149B2 (en) | Microphone and method for manufacturing the same | |
KR100901777B1 (en) | The structure and Manufacturing Process of a Condenser Microphone With a Flexure Hinge Diaphragm | |
KR20160127212A (en) | MEMS microphone and manufacturing method thereof | |
CN101406069A (en) | Condenser microphone | |
TW200934273A (en) | Vibration transducer and manufacturing method therefor | |
KR101688954B1 (en) | Method of Manufacturing Microphone Having Advanced Membrane Support System and Method of Manufacturing the Same | |
JP4811035B2 (en) | Acoustic sensor | |
KR101760628B1 (en) | Planar Structure Microphone and Method of Manufacturing the Same | |
KR101893486B1 (en) | Rigid Backplate Structure Microphone and Method of Manufacturing the Same | |
KR101657652B1 (en) | Capacitive mems microphone and method of making the same | |
KR102486582B1 (en) | MEMS microphone and method of manufacturing the same | |
KR101816253B1 (en) | Voice transmitting device and manufacturing method thereof | |
US9866968B2 (en) | Microphone and manufacturing method of microphone | |
KR20200026532A (en) | MEMS microphone and method of manufacturing the same | |
KR20180064960A (en) | Voice transmitting device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20191211 Year of fee payment: 4 |