KR20160127212A - MEMS microphone and manufacturing method thereof - Google Patents

MEMS microphone and manufacturing method thereof Download PDF

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Publication number
KR20160127212A
KR20160127212A KR1020150057324A KR20150057324A KR20160127212A KR 20160127212 A KR20160127212 A KR 20160127212A KR 1020150057324 A KR1020150057324 A KR 1020150057324A KR 20150057324 A KR20150057324 A KR 20150057324A KR 20160127212 A KR20160127212 A KR 20160127212A
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South Korea
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membrane
back plate
substrate
space
forming
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KR1020150057324A
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Korean (ko)
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김종일
이정규
임희수
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(주)이미지스테크놀로지
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Priority to KR1020150057324A priority Critical patent/KR20160127212A/en
Publication of KR20160127212A publication Critical patent/KR20160127212A/en

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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/005Electrostatic transducers using semiconductor materials
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/04Microphones
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003Mems transducers or their use

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

The present invention discloses a MEMS microphone package. A MEMS microphone according to the present invention comprises: a substrate: a first back plate and a second back plate formed on an upper surface of a substrate and horizontally spaced apart from each other; An insulating layer protruding along the periphery of the substrate to surround the outer edges of the first back plate and the second back plate; A partition wall formed at a spaced distance between the first back plate and the second back plate and dividing the inside of the insulation layer into a first space and a second space; And a membrane that covers the first space and the second space and is supported by the insulating layer and the partition.
According to the present invention, by implementing a plurality of pairs of membranes and a back plate in a single MEMS microphone, it is possible to obtain highly sensitive and highly reliable signals regardless of the direction of sound or the band of the sound. Further, by improving the vibration width of the membrane as compared with the prior art, high sensitivity can be realized.

Description

MEMS MICROPHONE AND METHOD OF MANUFACTURING THE SAME

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a MEMS microphone, and more particularly, to a MEMS microphone capable of effectively operating even when a sound transmission path or a sound band is varied, and having improved sensitivity.

Microphones are devices that convert acoustic signals into electrical signals, and there are a wide variety of types depending on materials and operating principles. Generally, it can be classified into a carbon microphone, a crystal microphone, and a magnetic microphone depending on the material, and it can be classified into a dynamic microphone using an induced electromotive force by a magnetic field and a condenser microphone using a capacitance change due to vibration of the membrane have.

Among them, micro condenser microphones such as ECM (Electret Condenser Microphone) and MEMS (Micro Electro Mechanical System) microphone are mainly used for portable or small electronic devices such as a computer, a mobile communication terminal, an MP3 sound recorder, a cassette recorder, a camcorder and a headset.

MEMS microphones are ultra-precision micromachined micro parts such as membranes, back plates, etc. on silicon substrates by applying semiconductor manufacturing technology. Since MEMS microphones do not use electret materials that are vulnerable to heat, they are mounted on main substrates such as mobile phones in high temperature reflow processes. And there is an advantage that the variation of the sensitivity of each product is not large. For this reason, the demand for MEMS microphones has been greatly increased in recent years compared to the ECM using the iletrette.

1 is a schematic cross-sectional view illustrating a conventional MEMS microphone package 20. As shown in the figure, the MEMS microphone package 20 includes a printed circuit board 21 having an external connection terminal 22 on its bottom surface, a MEMS microphone 30 surface mounted on the top surface of the printed circuit board 21, A bonding wire 26 connecting the MEMS microphone 30 and the amplification device 25, a bonding wire 26 connected to the printed circuit board 21 surrounding the MEMS microphone 30 and the amplification device 25, And a case 23 made of a metal material.

The MEMS microphone 30 is formed on the upper surface of the silicon substrate 31 and has a membrane 33 formed with a plurality of sound holes 35. The MEMS microphone 30 is located below the membrane 33 with the air gap 36 therebetween, (38 in Fig. 2), and a back chamber 32 formed to expose the back plate 34 from the bottom surface of the silicon substrate 31. [ 2 (a) and 2 (b) illustrate the planar shapes of the membrane 33 and the back plate 34, respectively.

The membrane 33 and the back plate 34 are each made of a conductive material or coated with a conductive material, and serve as a pair of opposing electrodes. Therefore, when the membrane 33 is vibrated by the external sound pressure, the capacitance between the membrane 33 and the back plate 34 changes and an electrical signal is generated.

The amplification device 25 amplifies an electrical signal generated in the MEMS microphone 30 by a negative pressure, and is generally composed of an application-specific integrated circuit (ASIC). The amplified signal from the amplification device 25 is transmitted to the main board of the electronic device such as a cellular phone through the external connection terminal 22. [

However, the conventional MEMS microphone 30 has some problems as follows.

First, since one membrane is used, there is a disadvantage that sensitivity to sound transmitted from the opposite side of the membrane is low.

Second, since the size and thickness of the membrane are fixed, it is very difficult to realize a high sensitivity for all the frequency ranges, and therefore, there is a limit to lower sensitivity for a specific frequency range.

Third, since the edge portion of the membrane is fixed to the substrate, there is a limit to increase the vibration width of the membrane, which limits the sensitivity.

Korean Patent No. 10-0925558 (published on Nov. 5, 2009)

SUMMARY OF THE INVENTION It is an object of the present invention to provide a high-sensitivity MEMS microphone which is independent of sound direction. The object of the present invention is to provide a MEMS microphone capable of obtaining high sensitivity for sounds of various ranges.

It is also an object of the present invention to provide a MEMS microphone which improves the sensitivity by increasing the vibration width of the membrane and simplifies the manufacturing process.

It is also an object of the present invention to improve the sensitivity of a MEMS microphone by improving the shape of a conventional membrane or back plate.

In order to achieve the above object, one aspect of the present invention provides a liquid crystal display comprising: a substrate: a first back plate and a second back plate formed on an upper surface of a substrate and horizontally spaced from each other; An insulating layer protruding along the periphery of the substrate to surround the outer edges of the first back plate and the second back plate; A partition wall formed at a spaced distance between the first back plate and the second back plate and dividing the inside of the insulation layer into a first space and a second space; And a membrane that covers the first space and the second space and is supported by an insulating layer and a partition wall.

In a MEMS microphone according to an aspect of the present invention, the membrane includes a first membrane positioned on an upper portion of a first back plate and a second membrane positioned on an upper portion of a second back plate, The second membrane may be electrically insulated.

Also, in the MEMS microphone according to one aspect of the present invention, the first space and the second space are formed to have different sizes, and the first membrane and the second membrane may have different sizes.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a first back plate and a second back plate horizontally spaced apart on a substrate; An insulating layer is formed on the upper surface of the substrate so as to surround the periphery of the first back plate and the second back plate while a partition wall is formed in the gap between the first back plate and the second back plate, Forming a first space and a second space on top of the two hundred plates, respectively; Filling the sacrificial layer in the first space and the second space, respectively; Forming a membrane supported on the sacrificial layer by a partition wall and an insulating layer, and forming a sound hole in the membrane; And removing the sacrificial layer filled in the first space and the second space.

In the manufacturing method, the step of forming a sound hole in the membrane may include forming a membrane on the first membrane located on the first back plate and on the second membrane, and electrically insulating the first membrane from the first membrane, To form a second membrane.

According to another aspect of the present invention, there is provided a substrate comprising: a substrate having a back chamber vertically penetrating therethrough; a first membrane covering the back chamber and having a peripheral portion disposed on an upper surface of the substrate and having a tone hole; A back plate spaced apart from the upper portion of the first membrane with a first air gap therebetween; And a second membrane disposed on an upper portion of the back plate with a second air gap interposed therebetween and having a sound hole formed thereon.

In the MEMS microphone according to still another aspect of the present invention, the heights of the first air gap and the second air gap may be different from each other.

Yet another aspect of the present invention is a method for manufacturing a semiconductor device, comprising: forming a first membrane on an upper surface of a substrate and forming a tone hole in the first membrane; Forming an insulating layer around the first membrane and forming a first sacrificial layer in a space surrounded by the insulating layer; Forming a back plate on an upper surface of the first sacrificial layer; Forming an insulating layer around the back plate and forming a second sacrificial layer in a space surrounded by the insulating layer; Forming a second membrane on the top surface of the second sacrificial layer and forming a tone hole in the second membrane; Forming a back chamber to expose a first membrane at a bottom surface of the substrate; And removing the first sacrificial layer and the second sacrificial layer.

According to another aspect of the present invention, there is provided a semiconductor device comprising: a substrate having a horizontal surface and a stepped surface including a vertical surface on one side; A back plate formed on a vertical surface of the step portion; The lower end of which is fixed to the horizontal plane of the step and the upper end is free, and which is arranged side by side with the back plate.

According to another aspect of the present invention, there is provided a semiconductor device, comprising: a substrate in which a vertical through hole is formed, in which a step portion including a horizontal plane and a vertical plane is formed inside the through hole; A back plate formed on a vertical surface of the step portion; The lower end of which is fixed to the horizontal plane of the step and the upper end of which is a free end, and a membrane formed side by side with the back plate.

At this time, a plurality of the step portions are formed in the periphery of the through holes, the back plate is formed in each of the vertical surfaces of the step portions, and the membrane may be formed in each horizontal surface of each step portion.

In addition, a plurality of through-holes may be formed, and one or more stepped portions may be formed for each of the through holes, and the back plate and the membrane may be formed at each of the stepped portions.

A stopper for limiting the amplitude of the membrane may be formed on the vertical surface of the stepped portion. A stopper for limiting the amplitude of the membrane may be formed on the inner wall of the through hole located on the opposite side of the back plate with respect to the membrane.

According to the present invention, by implementing a plurality of pairs of membranes and a back plate in a single MEMS microphone, it is possible to obtain highly sensitive and highly reliable signals regardless of the direction of sound or the band of the sound.

Further, by improving the vibration width of the membrane as compared with the prior art, high sensitivity can be realized.

1 is a cross-sectional view showing a schematic configuration of a conventional MEMS microphone
2 is a view illustrating a membrane and a back plate used in a conventional MEMS microphone;
3 is a cross-sectional view of a MEMS microphone according to a first embodiment of the present invention
FIG. 4 is a flow chart showing a manufacturing method of a MEMS microphone according to the first embodiment of the present invention.
5 is a cross-sectional view of a MEMS microphone according to a second embodiment of the present invention
6A and 6B are flowcharts showing a method of manufacturing a MEMS microphone according to a second embodiment of the present invention.
7 is a perspective view of a MEMS microphone according to a third embodiment of the present invention.
8 is a plan view and a side view of a MEMS microphone according to a third embodiment of the present invention
9 is a view showing various modified examples of a membrane used in a MEMS microphone according to a third embodiment of the present invention.
10 is a view showing a modification of the MEMS microphone according to the third embodiment of the present invention
11 is a view showing another modification of the MEMS microphone according to the third embodiment of the present invention.
12 to 15 are views showing still another modification of the MEMS microphone according to the third embodiment of the present invention
16 is a view showing a state where a stopper is formed on a MEMS microphone according to a third embodiment of the present invention
FIGS. 17A-B show various combinations and cross-sectional structures of a membrane and a backplate formed in a MEMS microphone

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that the scope of the present invention should not be construed as limiting the scope of the present invention because many of the drawings are exaggerated in size to illustrate the actual MEMS microphones.

First Embodiment

3, the MEMS microphone 100 according to the first embodiment of the present invention includes a substrate 110, a first insulating layer 121 formed on the upper and lower surfaces of the substrate 110, The first back plate 131 and the second back plate 132 are stacked on the upper surface of the insulating layer 121 and are stacked along the periphery of the first insulating layer 121, 131, and 132, respectively.

A partition wall 125 protruding upward between the first back plate 131 and the second back plate 132 and having a lower end in contact with the first insulation layer 121 and first and second back plates 131 and 132, And first and second membranes 161 and 162, respectively, disposed on the upper portion of the first insulating layer 122 and the barrier ribs 125, respectively.

A first air gap 151 is formed between the first back plate 131 and the first membrane 161 and surrounded by the second insulation layer 122 and one side of the barrier ribs 125, A second air gap 152 surrounded by the other side of the barrier ribs 125 is formed between the second insulating layer 122 and the second membrane 162.

The substrate 110 is preferably made of silicon, but is not limited thereto. The first insulating layer 121 and the second insulating layer 122 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or other insulating materials.

The first and second back plates 131 and 132 may be made of a conductive material such as a metal material or an ion-doped semiconductor material (e.g., polysilicon) or other conductive material.

The first and second membranes 161 and 162 may be made of a conductive material, a metal material, an ion-doped semiconductor material, or other conductive material.

Although not shown in the drawing, an electrical circuit pattern connected to the first and second back plates 131 and 132 and an electrical circuit pattern connected to the first and second back plates 161 and 162 are formed on the substrate 110.

Meanwhile, it is preferable that the first and second back plates 131 and 132 are electrically insulated by the barrier ribs 125, and the first and second membranes 161 and 162 are also electrically insulated from each other.

Since the first back plate 131 and the first membrane 161 form one electrode pair and the second back plate 132 and the second membrane 162 form another pair of electrodes, Substantially the same as that implemented.

Particularly, when the sizes of the first membrane 161 and the second membrane 162 are different from each other, the sensitivity of each band can be different. Therefore, by processing the signals generated from each backplate / membrane pair, So that it is possible to realize a microphone with high sensitivity close to the actual sound.

Further, according to the first embodiment of the present invention, since there is no need to form the back chamber 32 as shown in Fig. 1, there is an advantage that the manufacturing process becomes very simple.

In the meantime, the first embodiment of the present invention shows a MEMS microphone including two membrane / backplate pairs, however, if necessary, three or more membrane / backplate pairs may be formed.

Hereinafter, a method of manufacturing the MEMS microphone 100 according to the first embodiment of the present invention will be described with reference to FIG. However, the manufacturing method described below is exemplary and can be modified into various forms in specific applications.

First, a first insulating layer 121 is formed on the upper surface and a lower surface of the substrate 110, and a back plate 130 made of a conductive material is deposited on the upper surface of the first insulating layer 121. (See Figs. 4 (a) and 4 (b)),

Then, an etch groove 135 is formed to separate the back plate 130 into the first back plate 131 and the second back plate 132. The etch groove 135 should be formed to a depth at which the first insulating layer 121 is exposed, and may be formed by a dry etching method such as DRIE (Deep Reactive Ion Etching), or may be formed by other methods. (See Fig. 4 (c)).

A photosensitive mask (not shown) of a pattern corresponding to the first back plate 131 and the second back plate 132 is attached and then a second insulating layer 122 (not shown) is formed on the first insulating layer 121, ).

The second insulating layer 122 is formed along the periphery of the first insulating layer 121 and partially surrounds the top edges of the first back plate 131 and the second back plate 132, ). ≪ / RTI > The second insulating layer 122 deposited inside the etching groove 135 is utilized as a partition 125 separating the first air gap 151 and the second air gap 152 thereafter.

The deposition thickness of the second insulating layer 122 may be determined in consideration of the width of the air gaps 151 and 152. When the mask is removed after the second insulation layer 122 is deposited, a space surrounded by the second insulation layer 122 and the barrier ribs 125 is formed on the upper portions of the first back plate 131 and the second back plate 132, And this space is a portion where air gaps 151 and 152 are utilized later. (See Fig. 4 (d)).

Then, a sacrificial layer 170 is deposited on the upper space of the first back plate 131 and the second back plate 132, respectively. The sacrificial layer is a portion to be removed afterwards, and a material such as an oxide film, a photoresist, or the like can be used.

After the sacrificial layer 170 is deposited, the upper surface of the sacrificial layer 170 should be planarized through chemical mechanical polishing (CMA). At this time, the second insulating layer 122 at the peripheral portion and the partition 125 at the central portion are preferably planarized to the same height . (See Fig. 4 (e)).

Next, a conductive material membrane 130 is deposited on the sacrificial layer 170, and a plurality of sound holes 165 are formed in the membrane 130 through dry etching or the like. In this process, the membrane 130 may be separated into the first membrane 131 and the second membrane 132. (See Fig. 4 (f)).

After the tone holes 165 are formed in the membrane 130, the sacrificial layer 170 located under the membrane 130 is removed. At this time, depending on the type of the sacrificial layer 170, the sacrificial layer 170 may be removed using an acid or alkali organic solvent, or the sacrificial layer 170 may be removed by a dry method such as oxygen plasma ashing. (See Fig. 4 (g)).

Second Embodiment

5, the MEMS microphone 100a according to the second embodiment of the present invention includes a first membrane 161 disposed below the back plate 130 with a first air gap 151 therebetween, And a second membrane 162 is disposed above the back plate 130 with a second air gap 152 interposed therebetween.

More specifically, a back chamber 180 is formed on the substrate 110. The first insulating layer 121 is formed on the upper surface and the lower surface of the substrate 110, And the peripheral portion is placed on the upper surface of the first insulating layer 121 while covering the upper portion of the back chamber 180.

A second insulating layer 122 surrounding the top surface of the first membrane 161 is formed on the first insulating layer 121 at a predetermined height. The back plate 130 is arranged parallel to the second membrane 161 with the first air gap 151 therebetween and the peripheral portion of the back plate 130 is placed on the second insulating layer 122.

A third insulating layer 123 surrounding the upper surface of the back plate 130 is formed at a predetermined height on the second insulating layer 122. The second membrane 162 is disposed parallel to the back plate 130 with the second air gap 152 interposed therebetween and the peripheral portion of the second membrane 162 is placed on the third insulating layer 123 .

The first and second membranes 161 are each provided with a sound hole 165.

As in the first embodiment, the substrate 110 is preferably made of silicon, but is not limited thereto. The first to third insulating layers 121, 122 and 123 may be formed of a silicon oxide film (SiOx), a silicon nitride film (SiNx), or other insulating materials. The back plate 130, the first membrane 161 and the second membranes 161 and 162 are each made of a conductive material, which may be a metal material or an ion-doped semiconductor material (for example, polysilicon) It is possible.

According to the second embodiment of the present invention, since the back plate 130 and the first membrane 161 form one electrode pair and the back plate 130 and the second membrane 162 form another electrode pair, The same as that in which two microphones are implemented on one substrate 110.

Particularly, since the first membrane 161 and the second membrane 162 are located on the opposite sides of the back plate 130, different sensitivities can be exerted for the sounds introduced from the different directions. By using this point, noise can be removed more effectively, and the MEMS microphone 100b can be installed without greatly deviating from the direction of the electronic device, thereby greatly improving the degree of design freedom.

Also, since the sound generated from the same sound source reaches the first and second membranes 161 and 162 at different distances, there is a difference also in the electrical signals generated thereby. This point can be utilized for noise reduction and the like.

Even if the widths of the first air gap 151 and the second air gap 152 are different from each other, the sensitivity of each membrane / backplate pair is different. Therefore, It can also be used.

Hereinafter, a method of manufacturing the MEMS microphone 100a according to the second embodiment of the present invention will be described with reference to FIGS. 6A and 6B. However, the manufacturing method described below is exemplary and can be modified into various forms in specific applications.

First, a substrate 110 having a first insulating layer 121 formed on its top and bottom surfaces is prepared and a first membrane 161 made of a conductive material is deposited on the top surface of the first insulating layer 121. Then, a tone hole 165 is formed in the first membrane 161 through dry etching or the like. (See FIGS. 6A, 6A and 6B)

Next, a second insulating layer 122 surrounding the upper surface of the edge of the first membrane 161 is formed along the periphery of the first insulating layer 121.

A space surrounded by the second insulating layer 122 is formed on the first membrane 161 and a first sacrificial layer 171 is formed in the space and the first sacrificial layer 171 and the second sacrificial layer 171 are formed. 2 The upper surface of the insulating layer 122 is planarized by chemical mechanical polishing. (See Figs. 6A, 6C, and 6D)

Then, a back plate 130 made of a conductive material is deposited on the first sacrificial layer 171. At this time, it is preferable that the edge of the back plate 130 is deposited on the second insulating layer 122. After the back plate 130 is deposited, a third insulating layer 123 surrounding the upper surface of the edge of the back plate 130 along the periphery of the second insulating layer 122 is formed. (See Figs. 6A and 6E)

A second sacrificial layer 172 is formed in a space surrounded by the third insulating layer 123 and the upper surfaces of the second sacrificial layer 172 and the third insulating layer 123 are planarized. (See Figs. 6B and 6E)

Next, a second membrane 162 made of a conductive material is deposited on the second sacrificial layer 172, and a tone hole 165 is formed in the second membrane 162 through dry etching or the like. At this time, it is preferable that the edges of the second membrane 162 are deposited on the third insulating layer 132. (See Figs. 6B and 6F)

A part of the first insulating layer 121 formed on the bottom surface of the substrate 110 is removed by dry etching or the like and then a wet etching process using an etching solution such as TMAH or KOH is performed to a depth at which the bottom surface of the first membrane 161 is exposed The substrate 110 is removed. The thus removed space is provided to the back chamber 180. (See Figs. 6B and 6G)

The first and second sacrificial layers 171 and 172 are then removed to produce a MEMS microphone 100a in which the first membrane 161 and the second membrane 162 are disposed on both sides of the back plate 130. (See Figs. 6B and 6D)

Third Embodiment

The third embodiment of the present invention relates to a MEMS microphone of a new structure that can be manufactured in a simpler manner than the first and second embodiments.

7, a MEMS microphone 100b according to a third embodiment of the present invention includes a substrate 110, a horizontal surface 113 formed on one side of the substrate 110, A step plate 112 formed of a vertical surface 114 and a back plate 130 formed on a vertical surface 114 of the step portion 112. The back plate 130 is disposed in parallel with the back plate 130 with an air gap 150 therebetween, And a membrane 160 coupled to the horizontal surface 113 of the step portion 112.

That is, in the MEMS microphone 100b according to the third embodiment of the present invention, only the lower end of the membrane 160 is fixed to the substrate 110, and the upper end is provided as a free end. Therefore, the vibration width of the membrane 160 becomes larger than the case where the edge of the membrane 160 is mostly fixed to the substrate 110, and thus the sensitivity of the MEMS microphone can be greatly improved.

On the other hand, the substrate 110 is preferably made of silicon, but is not limited thereto. An insulating layer (not shown) is formed on each of the horizontal surface 113 and the vertical surface 114 of the step portion 112 and the back plate 130 is preferably deposited outside the insulating layer. Is also in contact with the upper portion of the insulating layer.

As described above, the MEMS microphone 100b according to the third embodiment of the present invention has a very simple structure. Therefore, various manufacturing methods can be selected in consideration of productivity and manufacturing environment.

A process of forming a step 112 including a horizontal surface 113 and a vertical surface 114 is performed on one side of the substrate 110 and then a back plate made of a conductive material is formed on the outside of the vertical surface 114 130 and a step of forming a membrane 160 made of a conductive material on the upper surface of the horizontal surface 113.

As another example, a step of forming a step portion 112 on one side of the substrate 110, a step of forming a back plate 130 of a conductive material outside the vertical surface 114, a step of forming a conductive material The process of depositing or bonding the membrane 160 of the membrane 160 may be sequentially performed.

As another example, a process of forming two trenches on the substrate 110 by dry etching, a process of forming a backplate 130 and a membrane 160 by depositing a conductive material on each trench, And a step of removing the substrate 110 located between the membrane 160 and the membrane 160 and the substrate 110 located outside the membrane 160.

In the MEMS microphone 100b according to the third embodiment of the present invention, the air gap 150 is not necessarily formed in the membrane 160 because the air gap 150 is opened upward.

However, in order to improve the flexibility of the membrane 160, various shapes can be applied as shown in FIG. 9A, a sound hole 165 may be formed on the entire surface of the membrane 160, and a slit 168 in the longitudinal direction may be formed on the membrane 160 as shown in FIG. 9 (b) And an elastic connecting portion 167 having a zigzag pattern may be formed on the lower end of the membrane 160 as shown in Fig. 9 (c).

9 (d) to 9 (f), the shape of the membrane 160 may be varied. 9 (g), the above-described structures may be applied to the membrane 160 in combination.

The MEMS microphone 100b shown in FIGS. 7 and 8 is excellent in sensitivity to negative pressure introduced from the front of the membrane 160 because one side of the membrane 160 is exposed to the outside. However, such a configuration is merely an example, and may be modified into various forms in actual application.

10, a vertical through hole 190 is formed in the substrate 110 and a membrane 160 and a back plate 130 are formed on one side of the through hole 190. In this case, May be disposed. Specifically, a step portion 112 including a horizontal surface 113 and a vertical surface 114 is formed on one side of the through hole 190, a back plate 130 is formed on the vertical surface 114, The lower end of the membrane 160 may be fixed in the vicinity of the edge of the horizontal surface 113 adjacent to the membrane 190. At this time, an air gap 150 opened upward is formed between the back plate 130 and the membrane 160.

When an external sound pressure is applied to the MEMS microphone 100c having such a structure, the membrane 160 vibrates and an electrical signal is generated, and the applied sound pressure is eliminated through the through hole 190.

11, a first membrane 161 and a second membrane 161 are formed on one side of the through hole 190 formed in the upper and lower portions of the substrate 110, with the first air gap 151 therebetween. The second membrane 162 and the second back plate 130 can be formed side by side with the second air gap 152 interposed therebetween at the other side of the through hole 190 .

More specifically, the step portion 112 including the horizontal surface 113 and the vertical surface 114 is formed on one side and the other side of the through hole 190, respectively, and the vertical surface 114 of each step portion 112 The first back plate 131 and the second back plate 132 are formed while the horizontal surfaces 113 of the step portions 112 adjacent to the through holes 190 are formed with the first membrane 161 and the second membrane 161, (162).

When an external sound pressure is applied to the MEMS microphone 100d, the two membranes 161 and 162 simultaneously vibrate and generate electrical signals, and the applied sound pressure is removed through the through-hole 190.

In this case, if the first and second membranes 161 and 162 have different thicknesses, lengths, materials, and the like, or if the widths of the first air gap 151 and the second air gap 152 are different from each other, Since the sensitivity of the pair changes, it is possible to increase the sensitivity to the entire band by generating a signal having a different sensitivity for each band using this point, or to use it for noise reduction.

On the other hand, in the MEMS microphone 100d of FIG. 11, two membrane / backplate pairs are formed around the through hole 190 of the substrate 110, but a larger number of membrane / backplate pairs may be formed.

For example, as shown in the MEMS microphone 100e of FIG. 12, a back plate 130 is formed in a quadrangular four-sided shape around the through-hole 190, and the back plate 130 and the through- The first to fourth membranes 161, 162, 163 and 164 may be formed in parallel with the respective sides of the back plate 130. [ At this time, the back plate 130 may be electrically connected or may be divided into four to correspond one-to-one with the respective membranes.

13, the back plate 130 is formed in the shape of a triangle, a pentagon, a hexagon, a circle, an ellipse, or the like around the through hole 190, and the back plate 130 and the through- A plurality of membranes may be formed.

As shown in the MEMS microphone 100f of FIG. 14, two through holes 191 and 192 are formed in one substrate, and a plurality of through holes 191 and 192 are formed in the back plate 130 and a plurality of corresponding Membranes 161, 162, 163, 164 may also be formed.

As shown in Fig. 15, three or more through-holes 190 may be formed, and the planar shapes of the through-holes 190 may be square, circular, hexagonal, triangular, It can be implemented in various forms such as multi-circle.

At this time, the back plate 130 is preferably formed in a shape corresponding to the through hole 190, but is not limited thereto.

In the MEMS microphones 100b, 100c, 100d, 100e and 100f according to the third embodiment of the present invention, since the upper ends of the membranes 160, 161 and 162 are provided as free ends, damage to the membranes 160, .

In order to prevent this, a stopper 118 protruding toward the membrane 160 is formed near the upper end of the vertical surface 114 of the step portion 112, as shown in the MEMS microphone 100g of FIG. 16, ). ≪ / RTI > The stopper 118 may be formed only on the vertical surface 114 of the step portion 112 or may protrude from the inner wall of the through hole 190 facing the vertical surface 114 with the membrane 160 therebetween have.

Fourth Embodiment

2, the sound holes 35 and 38 are formed in the membrane 33 and the back plate 34, respectively. In particular, an exhaust hole 37 is formed in the periphery of the membrane 33 In many cases. The formation of the sound holes 35 and 38 in this manner is intended to prevent the operation of the membrane 33 from being disturbed by rapidly dissipating the external sound pressure applied to the air gap 36.

However, recently, as MEMS microphones have become smaller in size, it is often difficult to realize high sensitivity because the external sound pressure can not be quickly solved with a conventional membrane or a back plate.

The fourth embodiment of the present invention has been proposed to solve such a problem, and relates to a new shape membrane and a back plate that can solve the sound pressure applied to an air gap in a MEMS microphone more quickly.

In one embodiment, the backplate 130 has a circular shape, for example, as in the prior art, while the corresponding membrane 160a, 160b has an approximate And a cross shape in which the rectangles are vertically crossed and the four ends are connected to the substrate 110. FIG. At this time, it is preferable to form an elastic connecting portion 167 having a zigzag pattern on the inner side of each fixed end of the membranes 160a and 160b for smooth vibration of the membranes 160a and 160b.

17B is a cross-sectional view of the MEMS microphone 200 in which the back flap 130 and the membranes 160a and 160b are used.

As can be seen from FIG. 17B, according to the present embodiment, since a considerable space is formed between both sides of the membranes 160a and 160b and the substrate 110, an exhaust hole is further formed in the membranes 160a and 160b no need. In FIG. 17A, sound holes 165 for dissipating sound pressure are formed on the respective membranes 160a and 160b, but such sound holes may be omitted in some cases.

Also, according to the present embodiment, since the portion where the membranes 160a and 160b are fixed to the substrate 110 is small, vibration of the membranes 160a and 160b is easier than in the prior art, and therefore, high sensitivity can be realized.

18A shows a case where both of the back plate 130a and the membrane 160c are rectangular or fixed to or connected to the substrate 110. FIG. Sectional view of the MEMS microphone 200 in which the MEMS microphone 160c is used.

In this case, since a considerable space is formed between both sides of the substrate 110 and the back plate 130a and between both sides of the substrate 110 and the membrane 160c, the flow of air So that it is possible to omit the sound hole for dissipating sound pressure in the membrane 160c. In this case, however, it is preferable to form the elastic connecting portion 167 having a zigzag pattern on the inner side of the both-side fixed ends for smooth vibration of the membrane 160c.

19A, the membrane 160 has a circular shape, for example, and has a sound hole and an exhaust hole, while the corresponding back plate 130a and 130b are provided at both ends of the substrate 110, And a cross shape in which two rectangles are vertically crossed and four ends are fixed to the substrate 110. As shown in Fig.

19B shows a cross section of the MEMS microphone 200 in which the back flutes 130a and 130b and the membrane 160 are used.

19B, since a considerable space is formed between both sides of the back platets 130a and 130b and the substrate 110 according to the present embodiment, the back platters 130a and 130b are relieved of the negative pressure So that there is no need to form a sound hole.

20A, the membrane 160 has, for example, a circular shape and a sound hole and an exhaust hole as in the prior art, whereas the corresponding back plate 130c has a through hole 134 at the center thereof And shows a formed central through-hole type.

20B is a cross-sectional view of the MEMS microphone 200 in which the back flap 130c and the membrane 160 are used.

20B, according to the present embodiment, the sound pressure of the air gap can be easily eliminated through the through hole 134 of the back plate 130c, so that a sound hole for dissipating the sound pressure is formed in the back plate 13c There is an advantage that it is not necessary to form it.

21A, the membrane 160 has, for example, a circular shape and a sound hole and an exhaust hole as in the prior art, whereas the corresponding back plates 130d and 130e have a plurality of through holes in a lattice shape And a wire type in which a plurality of slit-shaped through holes are closely arranged in a line.

The net back plate 130d may be realized by actually attaching a mesh or by forming the lattice-shaped partition walls to be very thin compared to the diameter of the adjacent through holes. The back plate 130e of the wire structure may be implemented by actually attaching a plurality of wires or may be realized by forming the straight type barrier ribs to be much thinner than the width of the adjacent through holes.

FIG. 21B shows a cross-section of the MEMS microphone 200 in which the back flutes 130d and 130e and the membrane 160 are used.

As can be seen from FIG. 21B, since the total area of the through-holes formed in the back platets 130d and 130e is much larger than that of the prior art, the sound pressure of the air gap is very quickly dissipated, The resistance is greatly reduced and the sensitivity is improved.

The fourth embodiment of the present invention has been described with reference to the case where the membrane is located on the upper side of the back plate. However, this is only an example, so that the present invention can be applied to a case where the membrane is located below the back plate.

Further, in the fourth embodiment of the present invention, it is assumed that the basic shape of the membrane or the back plate is circular, but the present invention can also be applied to a case where the basic shape of the membrane or the back plate is rectangular.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, And it is obvious that the scope of the present invention falls within the scope of the present invention if the technical idea of the present invention is included.

100, 200: MEMS microphone 110: substrate
112: step 113; water level
114; Vertical surface 118; stopper
121: first insulating layer 122; The second insulating layer
123: third insulating layer 125: barrier rib
130: back plate 131, 132: first and second back plates
134: through hole 135: etching groove
150: air gap 151, 152: first and second air gaps
160: Membranes 161, 162, 163, 164: first, second, third and fourth membranes
165: sound hole 167: elastic connection part
168: slit 170: sacrificial layer
171, 172: first and second sacrificial layers 180: back chamber
190: Through hole

Claims (16)

Board:
A first back plate and a second back plate formed on an upper surface of the substrate and horizontally spaced apart from each other;
An insulating layer protruding along the periphery of the substrate to surround the outer edges of the first back plate and the second back plate;
A partition wall formed at a spaced distance between the first back plate and the second back plate and dividing the inside of the insulation layer into a first space and a second space;
A membrane covering the first space and the second space, the membrane being supported by the insulating layer and the partition wall
A MEMS microphone
The method according to claim 1,
Wherein the membrane comprises a first membrane located on top of the first backplate and a second membrane located on top of the second backplate,
Wherein the first membrane and the second membrane are electrically insulated from each other.
The method according to claim 1,
Wherein the first space and the second space are formed to have different sizes, and the first membrane and the second membrane have different sizes.
Forming a first back plate and a second back plate in a horizontal direction on an upper portion of the substrate;
An insulating layer is formed on the upper surface of the substrate so as to surround the periphery of the first back plate and the second back plate while a partition wall is formed in the gap between the first back plate and the second back plate, Forming a first space and a second space on top of the two hundred plates, respectively;
Filling the sacrificial layer in the first space and the second space, respectively;
Forming a membrane supported on the sacrificial layer by a partition wall and an insulating layer, and forming a sound hole in the membrane;
Removing the sacrificial layer filled in the first space and the second space
≪ / RTI >
5. The method of claim 4,
The step of forming a sound hole in the membrane may include forming a first membrane on the first back plate and a second membrane disposed on the second back plate and electrically insulated from the first membrane, The method of manufacturing a MEMS microphone according to claim 1,
A substrate having a back chamber penetrating vertically:
A first membrane covering the back chamber and having a peripheral portion disposed on an upper surface of the substrate and having a tone hole formed therein;
A back plate spaced apart from the upper portion of the first membrane with a first air gap therebetween;
A second membrane disposed on the upper portion of the back plate with a second air gap interposed therebetween,
A MEMS microphone
The method according to claim 6,
And the height of the first air gap and the second air gap are different from each other.
Forming a first membrane on the top surface of the substrate and forming a tone hole in the first membrane;
Forming an insulating layer around the first membrane and forming a first sacrificial layer in a space surrounded by the insulating layer;
Forming a back plate on an upper surface of the first sacrificial layer;
Forming an insulating layer around the back plate and forming a second sacrificial layer in a space surrounded by the insulating layer;
Forming a second membrane on the top surface of the second sacrificial layer and forming a tone hole in the second membrane;
Forming a back chamber to expose a first membrane at a bottom surface of the substrate;
Removing the first sacrificial layer and the second sacrificial layer
≪ / RTI >
A substrate having a stepped portion including a horizontal surface and a vertical surface on one side;
A back plate formed on a vertical surface of the step portion;
The lower end is fixed to the horizontal plane of the step portion and the upper end is free end, and a membrane arranged side by side with the back plate
A MEMS microphone
A substrate in which a through hole is formed in a vertical direction, and a step portion including a horizontal surface and a vertical surface is formed in the through hole;
A back plate formed on a vertical surface of the step portion;
The lower end is fixed to the horizontal plane of the step portion and the upper end is free end, and the membrane formed side by side with the back plate
A MEMS microphone
11. The method of claim 10,
A plurality of step portions are formed in the periphery of the through holes,
Wherein the back plate is formed on each vertical surface of each step portion, and the membrane is formed on each horizontal surface of each step portion
11. The method of claim 10,
The MEMS microphones according to any one of claims 1 to 5, wherein the through holes are formed in a plurality of through holes, each of the through holes is formed in each of the through holes, and the back plate and the membrane are formed in each of the step portions.
The method according to any one of claims 9 to 12,
And a stopper for limiting the amplitude of the membrane is formed on the vertical surface of the stepped portion.
13. The method according to any one of claims 10 to 12,
And a stopper for limiting the amplitude of the membrane is formed on the inner wall of the through hole located on the opposite side of the back plate with respect to the membrane.
A MEMS microphone comprising a substrate having a through hole, a membrane having a peripheral portion supported on the substrate while covering the through hole, and a back plate positioned at an upper portion or a lower portion of the membrane with an air gap therebetween and having a peripheral portion fixed to the substrate As a result,
The back plate having a width smaller than the width of the membrane and having a rectangular shape in which both ends are fixed to the substrate, a cross shape in which two rectangles are crossed and four ends are fixed to the substrate, A mesh type in which partition walls having a width smaller than that of the through holes are arranged in a lattice form, and wire types in which partition walls having a smaller width than a plurality of slit-shaped through holes are arranged side by side are selected from the group consisting of a central through- microphone
A MEMS microphone comprising a substrate having a through hole, a membrane having a peripheral portion supported on the substrate while covering the through hole, and a back plate positioned at an upper portion or a lower portion of the membrane with an air gap therebetween and having a peripheral portion fixed to the substrate As a result,
The membrane is a rectangular shape having a width smaller than that of the back plate and connected at both ends to a substrate, or a cross shape in which two rectangular shapes are crossed and four ends are connected to the substrate.
Characterized in that the back plate is a rectangular, circular or square having the same width as the rectangular membrane,
KR1020150057324A 2015-04-23 2015-04-23 MEMS microphone and manufacturing method thereof KR20160127212A (en)

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KR20180064960A (en) 2017-06-08 2018-06-15 (주)다빛센스 Voice transmitting device and manufacturing method thereof
KR20180066577A (en) 2016-12-09 2018-06-19 (주)다빛센스 Acoustic sensor and manufacturing method thereof
WO2018110878A1 (en) * 2016-12-13 2018-06-21 (주)글로벌센싱테크놀로지 Microphone having horizontal tensile structure and method for manufacturing microphone
KR102091854B1 (en) 2018-11-30 2020-03-20 (주)다빛센스 Condensor microphone and manufacturing method thereof
CN112897448A (en) * 2021-02-25 2021-06-04 苏州敏芯微电子技术股份有限公司 MEMS sensor, MEMS structure thereof and manufacturing method of MEMS structure
KR102350898B1 (en) 2020-10-19 2022-01-14 (주)다빛센스 Method for forming mems electrode
WO2022055206A1 (en) * 2020-09-08 2022-03-17 한국생산기술연구원 Mems microphone backplate having acoustic hole structure for improving acoustic characteristics
KR20230125678A (en) 2022-02-21 2023-08-29 (주)다빛센스 Condenser microphone

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180066577A (en) 2016-12-09 2018-06-19 (주)다빛센스 Acoustic sensor and manufacturing method thereof
WO2018110878A1 (en) * 2016-12-13 2018-06-21 (주)글로벌센싱테크놀로지 Microphone having horizontal tensile structure and method for manufacturing microphone
KR20180064960A (en) 2017-06-08 2018-06-15 (주)다빛센스 Voice transmitting device and manufacturing method thereof
KR102091854B1 (en) 2018-11-30 2020-03-20 (주)다빛센스 Condensor microphone and manufacturing method thereof
KR102091849B1 (en) 2018-11-30 2020-03-20 (주)다빛센스 Condensor microphone and manufacturing method thereof
WO2022055206A1 (en) * 2020-09-08 2022-03-17 한국생산기술연구원 Mems microphone backplate having acoustic hole structure for improving acoustic characteristics
KR102350898B1 (en) 2020-10-19 2022-01-14 (주)다빛센스 Method for forming mems electrode
CN112897448A (en) * 2021-02-25 2021-06-04 苏州敏芯微电子技术股份有限公司 MEMS sensor, MEMS structure thereof and manufacturing method of MEMS structure
CN112897448B (en) * 2021-02-25 2024-05-03 苏州敏芯微电子技术股份有限公司 MEMS sensor, micro-electromechanical structure thereof and manufacturing method of micro-electromechanical structure
KR20230125678A (en) 2022-02-21 2023-08-29 (주)다빛센스 Condenser microphone

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