CN101110397A - 芯片封装结构 - Google Patents

芯片封装结构 Download PDF

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CN101110397A
CN101110397A CN 200610103328 CN200610103328A CN101110397A CN 101110397 A CN101110397 A CN 101110397A CN 200610103328 CN200610103328 CN 200610103328 CN 200610103328 A CN200610103328 A CN 200610103328A CN 101110397 A CN101110397 A CN 101110397A
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chip
bearing surface
packaging structure
substrate
load
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王盟仁
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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Abstract

一种芯片封装结构,包括基板、芯片和散热片。其中,基板具有相对应的承载表面和背面。芯片配置在承载表面上并电性连接至基板。此外,散热片配置在承载表面上并覆盖芯片。散热片包括顶壁和侧壁,顶壁和承载表面大致平行,侧壁由顶壁周围朝向承载表面弯折形成,并且侧壁远离顶壁的一侧并朝向芯片弯折延伸一接合部,用于和承载表面接合。

Description

芯片封装结构
技术领域
本发明涉及一种芯片封装结构,特别是一种具有散热效率好并且重量轻的散热片的芯片封装结构。
背景技术
随着集成电路的积集度的增加,芯片的封装结构也是越来越多样化,而复晶(Flip Chip)技术由于具有缩小芯片封装面积和缩短讯号传输路径等优点,目前已经广泛应用在芯片封装领域,例如芯片级封装(Chip Scale Package,CSP)、芯片直接贴装(Direct Chip Attached,DCA)技术以及多芯片组件封装(Multi-Chip Module,MCM)等型态的封装模块,均可以利用复晶技术而达到封装的目的。
在现有的复晶接合制程中,在将芯片通过导电凸块(Bump)电性连接并固定在基板上之后,为了加强芯片的散热效果,通常会使用散热胶在芯片背面贴附一散热片。请参考图1,为现有技术一种芯片封装结构的侧视图。现有的芯片封装结构100包括一基板110、一芯片120、一散热片130、一接着胶140、一散热胶150、多个导电凸块160、底胶(Underfill)170和多个焊球180。其中,基板110具有相对应的承载面112和电极面114。此外,由图1中可知,芯片120和基板110是通过复晶技术接合。其中,芯片120配置在承载面112上,并且芯片120经由以平面矩阵排列的导电凸块160与基板110相互电性连接。底胶170配置在芯片120和承载面112之间,用于包覆并且保护这些导电凸块160。
请再参考图1,焊球180以平面矩阵的排列方式配置在基板110的电极面114上,并通过基板110与芯片120相互电性连接。另外,散热片130配置在承载面112上,并且覆盖芯片120。由图1中可知,散热片130和芯片120之间是通过散热胶150彼此连接,而散热片130与承载面112之间是通过接着胶140彼此连接。值得注意的是,散热片130的制造方式是以冲压加工的方式在厚度T的方向形成一深度D的凹口,其缺点为深度D无法以此加工方式来增加尺寸,而散热片130所需材料较多且重量太重,因而材料成本提高。
请参考图2,为现有技术另一种芯片封装结构的侧视图。这种芯片封装结构200的散热片230是通过板压的方式成型,散热片230厚度较薄,因此散热片230所需材料较少、重量较轻,并可以降低材料成本。然而,由图2可知,散热片230的四周边缘需要形成一个远离芯片并弯折延伸的接合部232,用以与基板110接合,所以散热片230的散热面积的边长L1小于芯片封装结构200的边长L2,即散热面积会小于封装尺寸,使得散热效率受到限制。
发明内容
本发明所欲解决的技术问题是在提供一种芯片封装结构,其中散热片重量较轻,材料成本较低,并且可以提供较高的散热效率。
为解决上述的技术问题,本发明提出一种芯片封装结构的技术手段,包括一基板、一芯片与一散热片。其中,基板具有相对应的承载表面与背面。芯片配置在承载表面上,并电性连接至基板。此外,散热片配置在承载表面上,并覆盖芯片。散热片包括一顶壁和一侧壁,顶壁与承载表面大致平行,侧壁由顶壁周围朝向承载表面弯折形成,侧壁远离顶壁一侧并朝向芯片弯折延伸一接合部,用以与承载表面接合。
其中,散热片的侧壁与基板的边缘切齐。
其中,芯片封装结构进一步包括一黏着层,其配置在接合部与承载表面之间。
其中,芯片封装结构进一步包括配置在顶壁与芯片之间的散热胶。
其中,芯片封装结构进一步包括多条导线,芯片通过这些导线电性连接至基板。此外,芯片封装结构进一步包括配置在承载表面上的封装胶体,封装胶体至少覆盖这些导线。
其中,芯片封装结构进一步包括多个导电凸块,其配置在芯片与承载表面之间,芯片通过这些导电凸块电性连接至基板。此外,芯片封装结构进一步包括底胶,其配置在芯片和承载表面之间,并至少包覆这些导电凸块。
其中,芯片封装结构进一步包括多个焊球,其配置在基板的背面上,并通过基板电性连接至芯片。
基于上述,本发明芯片封装结构的散热片以弯折方式形成,并且其接合部朝向芯片弯折延伸,因此可提供与封装尺寸相当的散热面积。换言之,本发明的芯片封装结构具有重量较轻、材料成本较低且散热效率较佳等优点。
应用本发明的技术与现有技术的散热片相比,本发明的芯片封装结构的散热片以弯折方式形成,因此在制作上较为简单,并且具有较轻的重量,所需耗费的材料也较少。此外,由于散热片的接合部朝向芯片弯折延伸,因此在将散热片与基板接合后,可提供与芯片封装尺寸相当的散热面积,进而提高散热效率。另外,向内弯折的接合部在设计上也较具弹性,也不会使散热面积受到接合部的位置和大小的限制。
附图说明
图1为现有技术一种芯片封装结构的侧视图;
图2为现有技术另一种芯片封装结构的侧视图;
图3为本发明较佳实施例的一种芯片封装结构的侧视图。
其中,附图标记说明如下:
100、200、300芯片封装结构
110、310基板
112承载面
114电极面
120、320芯片
130、230、330散热片
140接着胶
150、350散热胶
160、360导电凸块
170、370底胶
180、380焊球
232、336接合部
312承载表面
314背面
332顶壁
334侧壁
340黏着层
D、D’深度
L1、L2、L’边长
T厚度
W宽度
具体实施方式
请参考图3,为本发明较佳实施例一种芯片封装结构的侧视图。本实施例的芯片封装结构300,包括一基板310、一芯片320与一散热片330。其中,基板310具有相对应的承载表面312和背面314。芯片320配置在承载表面312上并且电性连接至基板310。此外,散热片330配置在承载表面312上,并且覆盖芯片320。散热片330包括一顶壁332和一侧壁334,顶壁332与承载表面312大致平行,而侧壁334是由顶壁332周围朝向承载表面312弯折而形成,并且侧壁334远离顶壁332一侧并朝向芯片320弯折延伸一接合部336,用于与承载表面312接合。
更详细地说,散热片330在任何方向上的宽度W都一致并且薄,散热片330内部容纳芯片320的深度D’较深,并且散热片330的侧壁334可与基板310的边缘切齐。与现有技术的散热片130(见图1)相比,本实施例的散热片330的重量较轻且材料成本较低。此外,由于散热片330的散热面积的边长L’等同于封装尺寸,因此比现有技术的散热片230(见图2)的散热效率更高。
此外,本实施例的芯片封装结构300进一步包括一黏着层340,其配置在接合部336与承载表面312之间。黏着层340为接着胶,用于将散热片330黏接在基板310上而加以固定。另外,本实施例的芯片封装结构300进一步包括散热胶350,其配置在顶壁332和芯片320之间。散热胶350将散热片330和芯片320两者相互黏接,并且散热胶350用于将芯片320运作时所产生的热以传导的方式传递给散热片330并散热于外界环境中。
请参考图3,本实施例的芯片封装结构300进一步包括多个以平面矩阵方式排列的导电凸块360,其配置在芯片320和承载表面312之间,芯片320通过这些导电凸块360电性连接至基板310。此外,芯片封装结构300进一步包括底胶370,其配置在芯片320与承载表面312之间,并至少包覆且保护这些导电凸块360。由上述可知,芯片320和基板310是通过复晶技术接合。
值得注意的是,本实施例的芯片320和基板310之间也可采取打线(WireBonding)技术接合。换言之,芯片320也可通过多条导线电性连接至基板310,而配置在承载表面312上的封装胶体至少覆盖并保护这些导线。此外,散热片330配置在封装胶体上。
请再参考图3,本发明的芯片封装结构进一步包括多个焊球380,其配置在基板310的背面314上,并且透过基板310电性连接至芯片320。此外,这些焊球380以平面矩阵的排列方式分布在基板310的背面314。经由上述可知,本实施例的基板310的外引脚(即焊球380)为球栅矩阵(Ball Grid Array,BGA)的排列方式。当然,在本发明的其它实施例中,基板310的外引脚的排列方式亦可为矩栅阵列(Land Grid Array,LGA)或引脚网格阵列(Pin GridArray,PGA)的排列方式。
以上所述仅为本发明其中的较佳实施例而已,并非用来限定本发明的实施范围;即凡依本发明权利要求所作的均等变化与修饰,皆为本发明专利范围所涵盖。

Claims (9)

1.一种芯片封装结构,其特征在于包括:
一基板,具有相对应的一承载表面和一背面;
一芯片,配置在该承载表面上,并电性连接至该基板;以及
一散热片,配置在该承载表面上,并覆盖该芯片,其中该散热片包括与该承载表面大致平行的一顶壁以及由该顶壁周围朝向该承载表面弯折形成的一侧壁,该侧壁远离该顶壁一侧并朝向该芯片弯折延伸一接合部,该接合部用于与该承载表面接合。
2.如权利要求1所述的芯片封装结构,其特征在于,该散热片的该侧壁与该基板的边缘切齐。
3.如权利要求1所述的芯片封装结构,其特征在于,进一步包括一黏着层,该黏着层配置在该接合部和该承载表面之间。
4.如权利要求1所述的芯片封装结构,其特征在于,进一步包括一散热胶,该散热胶配置在该顶壁和该芯片之间。
5.如权利要求1所述的芯片封装结构,其特征在于,进一步包括多条导线,该芯片通过该导线电性连接至该基板。
6.如权利要求5所述的芯片封装结构,其特征在于,进一步包括一封装胶体,该封装胶体配置在该承载表面上并至少覆盖该导线。
7.如权利要求1所述的芯片封装结构,其特征在于,进一步包括多个导电凸块,该导电凸块配置在该芯片和该承载表面之间,该芯片通过该导电凸块电性连接至该基板。
8.如权利要求7所述的芯片封装结构,其特征在于,进一步包括一底胶,该底胶配置在该芯片和该承载表面之间,并至少包覆该导电凸块。
9.如权利要求1所述的芯片封装结构,其特征在于,进一步包括多个焊球,该焊球配置在该基板的该背面上,并通过该基板电性连接至该芯片。
CN 200610103328 2006-07-18 2006-07-18 芯片封装结构 Pending CN101110397A (zh)

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WO2014117495A1 (zh) * 2013-01-31 2014-08-07 华为技术有限公司 一种芯片封装结构及芯片封装方法
CN107464792A (zh) * 2016-06-02 2017-12-12 南茂科技股份有限公司 薄膜覆晶封装结构
WO2020237630A1 (zh) * 2019-05-31 2020-12-03 华为技术有限公司 一种芯片封装结构以及电路结构
CN114823550A (zh) * 2022-06-27 2022-07-29 北京升宇科技有限公司 一种适于批量生产的芯片封装结构及封装方法
WO2024000475A1 (en) * 2022-06-30 2024-01-04 Innoscience (suzhou) Semiconductor Co., Ltd. Semiconductor packaged device and method for manufacturing thereof

Cited By (10)

* Cited by examiner, † Cited by third party
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CN102130571A (zh) * 2011-03-21 2011-07-20 华为技术有限公司 一种电源封装及其装置
CN102130571B (zh) * 2011-03-21 2013-12-04 华为技术有限公司 一种电源封装及其装置
WO2014117495A1 (zh) * 2013-01-31 2014-08-07 华为技术有限公司 一种芯片封装结构及芯片封装方法
US9466597B2 (en) 2013-01-31 2016-10-11 Huawei Technologies Co., Ltd. Chip package structure and chip packaging method
CN107464792A (zh) * 2016-06-02 2017-12-12 南茂科技股份有限公司 薄膜覆晶封装结构
CN107464792B (zh) * 2016-06-02 2019-10-11 南茂科技股份有限公司 薄膜覆晶封装结构
WO2020237630A1 (zh) * 2019-05-31 2020-12-03 华为技术有限公司 一种芯片封装结构以及电路结构
CN114823550A (zh) * 2022-06-27 2022-07-29 北京升宇科技有限公司 一种适于批量生产的芯片封装结构及封装方法
CN114823550B (zh) * 2022-06-27 2022-11-11 北京升宇科技有限公司 一种适于批量生产的芯片封装结构及封装方法
WO2024000475A1 (en) * 2022-06-30 2024-01-04 Innoscience (suzhou) Semiconductor Co., Ltd. Semiconductor packaged device and method for manufacturing thereof

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