CN101110334B - Beam stop for an ion implanter - Google Patents
Beam stop for an ion implanter Download PDFInfo
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- CN101110334B CN101110334B CN2007101360926A CN200710136092A CN101110334B CN 101110334 B CN101110334 B CN 101110334B CN 2007101360926 A CN2007101360926 A CN 2007101360926A CN 200710136092 A CN200710136092 A CN 200710136092A CN 101110334 B CN101110334 B CN 101110334B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
- H01J2237/24465—Sectored detectors, e.g. quadrants
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
- H01J2237/24542—Beam profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
- H01J2237/30477—Beam diameter
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Measurement Of Radiation (AREA)
Abstract
This invention relates to a beam stop for an ion implanter that provides a measure of the ion beam current incident thereon and that may be used for ion beam optimisation. A beam stop for an ion implanter is provided comprising a charge collector with a segmented surface provided to receive an ion beam thereon, wherein the surface is divided into at least two segments, one segment extending around the other segment, and wherein each of the two segments is operable to provide one or more signals indicative of charge collected by that segment when an ion beam is incident thereon. Such a beam stop is advantageous as it provides information on the ion beam profile without the need to scan the ion beam.
Description
Technical field
The present invention relates to a kind of retaining bundle device of ion implantor, relate to a kind of the have ion implantor of such retaining bundle device and the method that ion injects.Especially, but not exclusively, the present invention relates to a kind of retaining bundle device, it provides the measurement of inciding the ion beam current on it, and can be used for ion beam optimization.
Background technology
Ion implantor is known and defers to common design as described below usually.The ion beam that ion source is mixed by generations such as precursor gas.Usually only the ion of particular types is required to be injected in the substrate, for example is used for being injected into the semiconductor wafer specific dopant.Desired ion is to use the mass analysis magnets relevant with mass resolution slit from the intrafascicular selection of hybrid ionic.Therefore, the ion beam that almost only contains desired ion comes out to enter process chamber from mass resolution slit, and here, ion incidence is in being remained on the substrate of appropriate position in the ion beam path by substrate holder.When substrate when ion beam path is removed, ion retaining bundle device is provided to receive ion beam.
Usually need to measure the flow and/or the cross-sectional distribution of ion implantor intermediate ion bundle, to improve control to injection technology.In an example, such needs are present in the ion implantor of its ion beam size less than the substrate that will be injected into.Inject in order to ensure the ion on the entire substrate, ion beam and substrate move relative to each other so that ion-beam scanning entire substrate surface.This can be by (a) thus deflected ion beam is striden the substrate scanning that remains on the fixed position, (b) mechanical mobile substrate keeps ion beam path to fix simultaneously, or (c) combination of deflected ion beam and mobile substrate.Usually, implementation relatively moves so that ion beam is followed the tracks of the grating pattern on the substrate.
Our co-pending U.S. Patent application has been described the ion implantor of above-mentioned general design for No. 10/119290.Single substrate is maintained on the removable substrate holder.Permission is provided the ion optics that ion beam carries out some manipulation and shaping.Yet the operation ion implantor is so that ion beam advances along fixed route in injection process, thereby and substrate holder move along two normal axis and cause that ion beam defers to grating pattern scanning entire substrate.
US6525327 has described a kind of ion implantor, and its intermediate ion retaining bundle device is used to measure ion beam.Ion retaining bundle device comprises the charge-trapping rod of three linear extensions.Each rod provides the signal of indication ion beam current incident thereon.Can compare during thereby these signals realize that ion beams are poly-.US6525327 also discloses the division to the collecting board of retaining bundle device, and this collecting board and linear extension rod are on same direction.From the signal of the different piece of dividing plate also can be used for ion beam poly-in.
Summary of the invention
Under such background, on the one hand, the present invention relates to be used for the retaining bundle device of ion beam implanter, this retaining bundle device comprises charge collector, its surface that is equipped with segmentation is to receive the ion beam on it, and wherein this surface is divided at least two sections, and one section around another section extension, and wherein the section of each in two sections can be used for when ion beam is incident thereon, and one or more signals of indicating the collected electric charge of this section are provided.
Such retaining bundle device is favourable, because it provides the information of ion beam distribution, and need not ion beam.Different structure also is possible, and such as the surface being divided at least two sections that are provided with one heart, this section can comprise ring segment, and this ring segment extends around the central, circular section alternatively.Such structure is useful, because it conveniently provides the radial distribution of ion beam.Can use one or more ring segments.A series of ring segments that are provided with one heart around the central, circular section can provide more about radially-arranged information, and therefore allow to determine radial distribution with higher resolution.Yet, handle signal from every section bigger quantity mean must make compromise.
The relative area of section can change.Possible scheme comprises using to have of the same area section, the linear diameter that increases every section, or each section is used different area.
Preferably, one or more sections quilts are further laterally divided, and each part in its stage casing can be used for providing the signal of indication by the electric charge of this part collection.Thereby section can be divided into subelement, and this explanation is right and is called part.Section comprises a plurality of parts, and generally, these parts are extended around another section, and are fan-shaped as a series of anchor rings.Each part provides the signal of himself, and these signals can be added up so that the total electrical charge of this section collection to be provided.Section is divided into part allows to collect more Useful Information.In the embodiment that is considered, section laterally is divided into two halves.But carry out allowing in ion beam poly-this division crosscut scanning direction, for example by balance this section each partly on collected electric charge.Consider that accurate balance may not be optimum: so need the unbalanced detector response of compensation two halves.
Further consider section laterally is divided into four 1/4th.In addition, section is divided with in allowing to gather on two scanning directions the crosscut scanning direction alternatively.This can by 1/4th the signal that comes from the phase adjacency pair is summed up, and relatively these two signals realize.For horizontal sweep, the many of vertical arrangement are summed up signal, vice versa.
Second aspect the present invention relates to comprise the ion implantor of any above-mentioned retaining bundle device.Alternatively, the surface of charge collector is divided at least two sections that are provided with one heart, and wherein ion implantor can be used for providing ion beam, and this ion beam has the shape corresponding to this section shape on the whole.
Ion implantor further comprises substrate holder, its substrate that is used for being injected into remains on the upstream of ion beam path retaining bundle device, and can be used for causing the relative motion of ion beam and substrate holder along first direction, preferably, one or more sections further crosscut first directions of retaining bundle device are divided, and form like this each partly all can be used for providing the signal of this half collected electric charge of indication.Similarly, when being arranged, two scanning directions also can adopt 1/4th.
The third aspect the present invention relates to optimize the method for any above-mentioned ion implantor intermediate ion bundle, comprises response by the signal that each section of ion retaining bundle device provides, and ion beam is formed and/or handles.
Fourth aspect the present invention relates to the retaining bundle device of ion implantor, and this retaining bundle device comprises: the front panel that limits the ingate; The internal capacity that extends from the ingate of delimiting by one or more limits and rear board; Charge collector with surface, this surface form the part of rear board at least and are provided to receive ion beam on it; The charge-trapping baffle plate, its from one or more limits extends in the internal capacity, and the upstream that is arranged on rear board to be to provide front plate, and this front plate is provided to receive the ion beam on it; Wherein charge collector and charge-trapping baffle plate each all can be used for providing indication to work as one or more signals of ion beam collected electric charge when inciding surface and positive going up respectively.
This allows ion beam distribution to collect from the position of skew ion beam path, and therefore can provide other Useful Informations, such as ion beam path and the divergence of ion beam along the z axle.By provide rear board for baffle plate, can realize useful synergy to collect the back scattering ion.Thereby an architectural feature provides two functions: the possibility that reduces the influence of back scattering ion and definite ion beam path/disperse.
Alternatively, the equidistant hole that forms corresponding to the shape of ingate thereby baffle plate each from one or more limits extends internally.For example, the baffle plate cross section can be annular.Alternatively, can use baffle plate separately.Two embodiment that considered are a pair of baffle plate and four baffle plates around the internal capacity symmetric arrangement of striding the internal capacity symmetric arrangement.
The invention still further relates to ion implantor, it comprises above-mentioned retaining bundle device.In addition, the invention still further relates to the method for optimizing ion beam, comprise signal that response provides by charge collector and charge-trapping baffle plate, ion beam is formed and/or handles.
Other preferred features of the present invention limit in claims.
Description of drawings
Hereinafter will describe embodiments of the invention at accompanying drawing, these embodiment only are used for example, wherein
Fig. 1 is the diagram of ion implantor;
Fig. 2 is by keeping off the cross section of bundle device according to an embodiment of the invention;
Fig. 3 is the front view of first embodiment of the retaining bundle device of Fig. 2 according to the present invention;
Fig. 4 is the front view according to the retaining bundle device of second embodiment of the invention;
Fig. 5 is the front view according to the retaining bundle device of third embodiment of the invention;
Fig. 6 is the front view according to the retaining bundle device of fourth embodiment of the invention;
Fig. 7 is the front view according to the retaining bundle device of fifth embodiment of the invention;
Fig. 8 is the front view according to the retaining bundle device of sixth embodiment of the invention;
Fig. 9 is by the cross section according to the retaining bundle device of the further embodiment of the present invention;
Figure 10 is the simplification cross section of retaining bundle device among Fig. 9, and it illustrates the incident high energy ion beam;
Figure 11 is the simplification cross section of retaining bundle device among Fig. 9, and it illustrates the incident low energy ion beam;
Figure 12 is the front view according to the retaining bundle device of seventh embodiment of the invention; With
Figure 13 is the front view according to the retaining bundle device of eighth embodiment of the invention;
Embodiment
For background content of the present invention is provided, exemplary application has been shown among Fig. 1, but should have recognized that it only is an example and nonrestrictive.
Fig. 1 shows ion implantor 10, and it is used for injecting ion at semiconductor wafer 12.Ion implantor 10 is positioned at the vacuum chamber 15 by vacuum pump 24 pumping.In a word, ion is by ion source 14 generations that will be sucked and by quality analysis level 30.The ion of required quality is selected by passing through mass resolution slit 32, and continues bump semiconductor wafer 12.Ion implantor 10 is to work under the management of controller, and controller is the computer of the suitable software of operation usually.
Ion source 14 produces the ion beam that comprises required kind.The ion that produces in the ion source 14 aspirates by outlet opening 28 with suction electrode assembly 26.Thereby power supply 21 applies electrical potential difference the ion that is aspirated is accelerated to the required beam energy that is suitable for by ion implantor 10 between ion source 14 and suction electrode assembly (not shown), ion source 14 and quality analysis level 30 are electrically insulated from each other by the insulator (not shown).For shallow injection, the unacceptable Shu Fangda that causes of space charge effect thereby beam energy is optimized to that enough height are avoided, and ion beam was decelerated the lens subassembly (not shown) subsequently and slows down before injecting.
The ion mixture of suction is by ion analysis level 30, so they pass crooked route under the effect in magnetic field.The radius of curvature of any ion mobile route is by its quality, state of charge and energy decision.Controlling magnetic field is so that for a beam combination energy, and only those ions with required quality and state of charge leave along the path consistent with mass resolution slit 32.Outgoing ion beam 34 is transported to target then, promptly remains on treating on the appropriate location by wafer support 36 and injects substrate wafer 12.When wafer 12 and wafer support 36 shifted out the path of ion beam 34, ion beam 34 continued to incide on the retaining bundle device 100.Retaining bundle device 100 absorb the heat that produces by ion beam 34 incidents and reduce since the pollutant that ion beam 34 incidents cause to the injection of wafer 12.
Once only single semiconductor wafer 12 (or other targets) is injected into, or many wafers 12 can be arranged on the conveyer etc., thereby this conveyer rotation is submitted to the incident ion bundle with wafer 12 successively.
Inject usually and realize, so that required dosage is strafed the back realization many times by relative wafer 12 ion beam 34.Scanning can be by using wafer support 36 to move wafer 12, using ion optics (not shown) moving iron bundle 34 or the combination of the two to realize.
Geometric configuration in the zone of wafer 12 is to be represented by the axle among Fig. 1.The z axle is corresponding to the direct of travel of ion beam 34.The x axle is represented horizontal direction, and the y axle is represented vertical direction.
The cross section of retaining bundle device 100 according to an embodiment of the invention has been shown among Fig. 2.Retaining bundle device 100 comprises Faraday cup, and it has ingate 102, the enough wide reception in hole 102 ion beam 34 thereby this ingate 102 is limited by annular ring 104.In this embodiment, with respect to fixing ion beam 34 scanning wafers 12.Only this means that implementing ion beam in a small amount moves (proofread and correct effectively and optimize harness shape and position), and therefore hole 102 can be correspondingly little.When ion beam 34 is scanned, need bigger hole 102 in injection process.In mixed sweep implanter 10, the size on the dimension in hole 102 goes up big many than another dimension.
Retaining bundle device 100 limits internal capacities 106, and it 102 extends and by sidewall 108 and rear wall 110 restrictions from the ingate.Backboard 112 is fixed on the rear wall 110 with standard mode, to face ingate 102.Therefore, indicate its ion beam that moves 34 to enter by arrow A and clash into backboard 112 by ingate 102.Backboard 112 and other SI semi-insulations that keep off bundle device 100, and its size covers the four corner of ion beam 34.
Fig. 3 illustrates the front view of first embodiment of backboard 112.Backboard 112 has circular cross section and comprises by two ring segments 121 and the 122 annular center sections 110 of surrounding, and section 120 to 122 by little gap 130 separately.Three sections 120 to 122 are provided with one heart, and have area identical in this embodiment.Each section 120 to 122 is electric insulation with two other section.For each section 120 to 122 provides connection 118 as shown in the figure, so that each section 120 to 122 provides the signal of having indicated the ion beam current of incident on it.
These signals can be used to obtain the information about ion beam 34.For example, signal can be expressed as block diagram, thereby the indication ion line reduces as the function of the radial distance at ion beam 34 centers how.When wafer 12 by when the overlapped scans line sweep injects, the radial distribution of understanding ion beam 34 is important.This comprises the width and the ion beam current radial variations of ion beam 34.For example, ion beam current can characterize by Gaussian function.And any asymmetric knowledge all is useful in the ion beam 34, because can proofread and correct and compensate them subsequently.Certainly, can only, the signal that comes from three sections 120 to 122 obtain total ion beam current by being summed up.
Fig. 3 illustrates the circular backboard 112 with circle segments 120 to 122, and it is suitable for characterizing ion beam 34 with circular distribution most.Yet it is circular that ion beam 34 can need not to be, and the shape of backboard 112 and section 120 to 122 thereof can correspondingly change.For example, Fig. 4 illustrates the backboard 112 identical with Fig. 2 dorsulum 112, but it has the elliptical shape that is suitable for elliptical ion beam.Thereby backboard 112 is divided into oval central segment 120, and it is surrounded by elliptical perimeter section 121 and 122.
The quantity of section 120 to 122 can change according to desired amount of information.Fig. 5 illustrates circular backboard 112, and it is divided into circular central section 121 to 124.Certainly, can select any amount of section 121 to 124.Usually, section 121 to 124 selection will be compromised between the benefit of extraneous information and Geng Duo signal processing tasks.
Except the radial information about ion beam distribution is provided, backstop bundle device 100 can be used for providing poly-middle information.Carrying out in the relative scanning direction is the most useful, and the poly-middle information along x and y axle promptly is provided in this embodiment.Fig. 6 shows the embodiment of the circular backboard 112 that is divided into two sections 120 and 121: circular interior section 120 and annular, outer section 121.Inner section 120 is further by vertical electric insulation gap 130 120a and 120b in two.Among two halves 121a and the 121b each partly all provides the signal of himself, and this signal is indicated the ion beam current on it.
Thereby the backboard 112 among Fig. 6 provides three signals.Thereby can compare two and determine that from the signals of two halves 120a, the 120b of inner section 120 ion beams 34 are along in x axle poly-.Measurement can be carried out when ion beam 34 is adjusted, and promptly uses measurement in the feedback loop to control the manipulation of ion beam 34.For during ion beam 34 is poly-on retaining bundle device 100, should be (supposition is identical from the response of per half 120a, 120b: backboard 112 can be calibrated and therefore the sensitivity difference can be compensated) of balance from the signal of two halves 120a, 120b.Alternatively, optimal ion bundle position is can be corresponding with the center of retaining bundle device 100, and therefore can to ion beam 34 adjust up between the two halves 120a of section and 120b, realize required compensation.
From the signal of the two halves 120a of inner section 120 and 120b can be added and and with compare from the signal of outer portion part 121 (or a plurality of outer portion part, more than one outer portion part is arranged here), thereby allow to form radial distribution, as mentioned above.
Fig. 7 illustrates the variation of embodiment among Fig. 6, and wherein inner section 120 and outer portion part 121 all are divided into two halves.Except being shaped with radial distribution in above-mentioned gathering, can carry out further analysis by right half the radial distribution of the left half-sum of reference ion bundle 34.Thereby, can the ion optics of using ion implantor 10 ion beam 34 is calibrated reshape during, detect and also monitor any asymmetry in the ion beam 34.
By further dividing inner section 120 and outer portion part 121 with horizontally extending gap 130, Fig. 8 is based upon on the embodiment shown in Figure 7.Thereby inner section 120 and outer portion part 121 all are divided into 1/4th, each 1/4th signal (8 altogether) that himself is provided.Thereby the backboard among Fig. 8 is used in poly-intermediate ion bundle 34 on x and the y direction, and detects the asymmetry in x direction of principal axis and the y direction of principal axis.Should be appreciated that this be by add and be close to four/in the lump with corresponding realizing to comparing, thereby as 120a and 120c can be added and and with 120b and 120d add and compare obtain the x axle poly-in.
Fig. 9 illustrates the cross section of retaining bundle device 100, and it is substantially corresponding to the retaining bundle device shown in Fig. 2.Therefore, identical Reference numeral is used for identical parts.Spray relevant problem for further minimizing is any with the charged particle that comes from backboard 112, partly provide baffle plate 150 along internal capacity 106.Alternatively, can provide two or more baffle plates that separate 150.Baffle plate 150 inwardly stretches out and provides front panel 152 (the most close ingate 102) and rear board 154 from sidewall 108.Rear board 154 is optimized to absorb secondary electron and other charged particle of ejection.
Baffle plate 150 forms the neck member 156 that has slot in internal capacity 106, so that absorbed by the section of baffle plate 150 or the sidewall 108a between baffle plate 150 and rear wall 110 from many charged particles of backboard 112 ejections.
Figure 10 and 11 illustrates respectively and passes high energy ion beam 160 and the low energy ion beam 162 that retaining bundle device 100 is advanced.Dispersing of high energy ion beam 160 is less, and the space charge effect time is shorter.Therefore, high energy ion beam 160 is narrower and by ingate 102 and the slot 156 determined by ring baffle 150.The amplification of low energy ion beam 162 causes the edge bombardment baffle plate 150 of ion beam 162.Therefore, baffle plate 150 produces shade in the downstream, but the continuing to disperse and reduce the shade size of ion beam 162.Because only bombardment baffle plate 150 in the edge of ion beam 162 has very weak electric current on it, compared to backboard 112, the problem that charged particle sprays is significantly reduced.
Yet measuring the ion beam current that is incident on the baffle plate 150 is favourable to allow total ion beam current to measure and form radial distribution.In addition, baffle plate 150 allows to measure ion beam trajectory and diversity along the fact of z axle offset.Thereby the front panel of baffle plate 150 is equipped with charge-trapping sheet 158 (hereinafter referred to as the baffle plate sheet), and the signal of the ion beam current of indication incident on it is provided from charge-trapping sheet 158.
Because the neck member 156 that is formed by baffle plate 150 is narrower than ingate 102, backboard 112 can be littler than aforesaid backboard 112.Though can use monolithic backplane 112, preferably use the backboard 112 of segmentation.Figure 12 and 13 illustrates two such structures.
Figure 12 is the front view of an embodiment of the backboard 112 of vertical division, and this backboard 112 has ring baffle sheet 158.Ring baffle sheet 158 has width W
1, and limit width W
2Hole 156.Backboard 112 is circular and width is W
3W
3Overall width W than internal capacity 106
4Little, but compare W
2Greatly, to solve dispersing of ion beam 34.In addition, total ion beam current can be by adding and all signals obtain.
Figure 13 is the front view of another embodiment with retaining bundle device 100 of baffle plate 158.Baffle plate 158 comprise two corresponding section 158a and 158b (on mathematical meaning, promptly they are corresponding to the arc chord of circle, arc form by sidewall and string form by parallel edge).Edge 159 vertical extent, gap 130 too, gap 130 is with circular backboard 112 112a and 112b in two.As previously described, backboard 112 is used in the poly-intermediate ion bundle 34 of x direction of principal axis.In addition, baffle plate sheet 158a and 158b also can.Add and can provide total ion beam current from the signal of baffle plate sheet 158a and 158b and backboard 112.
One skilled in the art will recognize that: can make a change and the scope of the present invention determined of Lip river reason claims not the foregoing description.
For example, (relative shape and the sizes that comprise each section) such as the quantity of the section of change 120, shape and size as required.In addition, division that also can the section of change 120 or the like.Also can change the shape of retaining bundle device, rectangle or square and circle or ellipse are particularly preferred shape of cross sections.
Claims (20)
1. retaining bundle device that is used for ion implantor, it comprises Faraday cup and the charge collector with rear wall and sidewall, at described rear wall, described charge collector has segmented surface, this segmented surface is provided to receive the ion beam on it, and wherein said surface is divided at least two sections, and one section around another section extension, and every section in wherein said two sections can be used for when ion beam is incident thereon, and one or more signals of the collected electric charge of this section of indication are provided.
2. retaining bundle device according to claim 1, wherein said surface are divided at least two sections that are provided with one heart.
3. retaining bundle device according to claim 2, the section of wherein said concentric setting comprises ring segment.
4. retaining bundle device according to claim 3, wherein said ring segment extends around the central, circular section.
5. retaining bundle device according to claim 4, wherein said surface is divided into the ring segment of central, circular section and a series of concentric settings.
6. according to the described retaining bundle of aforementioned arbitrary claim device, one of them or more multistage further laterally divided, and every part of wherein said each section can be used for providing the signal of indication by the collected electric charge of this part.
7. retaining bundle device according to claim 6, its stage casing further laterally is divided into two halves.
8. retaining bundle device according to claim 7, its stage casing further laterally is divided into 1/4th.
9. ion implantor, it comprises according to the described retaining bundle of arbitrary aforementioned claim device.
10. ion implantor according to claim 9, the surface of wherein said charge collector is divided at least two sections that are provided with one heart, and wherein said ion implantor can be used for providing ion beam, and this ion beam has the shape corresponding to this section shape on the whole.
11. ion implantor according to claim 10, wherein said ion implantor can be used for providing the ion beam with circular cross section, and described surface is divided into the ring segment of central, circular section and a series of concentric settings.
12. according to the described ion implantor of arbitrary claim in the claim 9 to 11, wherein said ion implantor further comprises substrate holder, the substrate that is used for being injected into remains on the ion beam path upstream of retaining bundle device, described ion implantor can be used for causing described ion beam and described substrate holder relatively moving along first direction, and the described first direction of the further crosscut of one or more sections quilts of wherein said retaining bundle device is divided, and the every signal that partly can be used for providing this half collected electric charge of indication that forms like this.
13. ion implantor according to claim 12, wherein said ion implantor can be used for causing described ion beam and described substrate holder relatively moving along second direction, and the described second direction of the further crosscut of one or more sections quilts of wherein said retaining bundle device is divided, and each 1/4th signal that can be used for providing this 1/4th collected electric charge of indication that forms like this.
14. ion implantor according to claim 9 further comprises arithmetical unit, the signal that it can be used for adding and is provided by described each section.
15. ion implantor according to claim 9 further comprises arithmetical unit, the signal that it can be used for adding and is provided by the each several part of described each section.
16. ion implantor according to claim 9 further comprises controller, it can be used for controlling signal that ion optics provides by each section with response, described ion beam is formed and/or handles.
17. an optimization is according to the method for the ion beam in the described ion implantor of arbitrary claim in the claim 9 to 16, it comprises signal that response provides by each section of described retaining bundle device, described ion beam is formed and/or handles.
18. method according to claim 17, when putting into practice on according to claim 12 or 13 described ion implantores, it comprises uses ion beam described in the signal pcl that the two halves by the section of the further division of described retaining bundle device provide.
19. method according to claim 18, it comprises by the steer ions bundle up to realizing that between described two halves required compensation realizes in described ion beam poly-.
20. method according to claim 19 wherein saidly is compensated for as zero.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83146506P | 2006-07-18 | 2006-07-18 | |
| US60/831,465 | 2006-07-18 |
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| Publication Number | Publication Date |
|---|---|
| CN101110334A CN101110334A (en) | 2008-01-23 |
| CN101110334B true CN101110334B (en) | 2011-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101360926A Expired - Fee Related CN101110334B (en) | 2006-07-18 | 2007-07-17 | Beam stop for an ion implanter |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2008060549A (en) |
| KR (1) | KR20080008269A (en) |
| CN (1) | CN101110334B (en) |
| GB (1) | GB2443279A (en) |
| TW (1) | TW200823955A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101769493B1 (en) * | 2011-12-23 | 2017-08-30 | 주식회사 원익아이피에스 | Substrate processing apparatus and substrate processing system |
| GB2617857A (en) * | 2022-04-22 | 2023-10-25 | Smiths Detection Watford Ltd | Collector for ion detection |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10062106A1 (en) * | 2000-12-13 | 2002-06-20 | Rieter Ingolstadt Spinnerei | Aerostatic thrust bearing, for the free end of an open-end spinning rotor shaft with an air gap, has a choke in the air feed to the gap formed by structured micro-pore holes |
| CN1638015A (en) * | 2004-01-09 | 2005-07-13 | 应用材料有限公司 | Improvements relating to ion implantation |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213249A (en) * | 1987-03-02 | 1988-09-06 | Mitsubishi Electric Corp | Ion implantation device |
| JPH01225053A (en) * | 1988-03-03 | 1989-09-07 | Nec Corp | Ion implantation monitor |
| JPH02267845A (en) * | 1989-04-07 | 1990-11-01 | Fujitsu Ltd | Ion inplantation device |
| JPH0368348U (en) * | 1989-11-06 | 1991-07-04 | ||
| JPH0388257U (en) * | 1989-12-25 | 1991-09-10 | ||
| JPH06267491A (en) * | 1993-03-09 | 1994-09-22 | Nippon Steel Corp | Ion implanting device |
| JPH07122221A (en) * | 1993-10-27 | 1995-05-12 | Hitachi Ltd | Split type sensor |
| GB2355337B (en) * | 1999-10-12 | 2004-04-14 | Applied Materials Inc | Ion implanter and beam stop therefor |
| GB2355336B (en) * | 1999-10-12 | 2004-04-14 | Applied Materials Inc | Ion implanter with wafer angle and faraday alignment checking |
| JP2003068244A (en) * | 2001-08-28 | 2003-03-07 | Applied Materials Japan Inc | Extraction electrode block for ion implantation system, and the ion implantation system |
| JP2003123684A (en) * | 2001-10-12 | 2003-04-25 | Applied Materials Inc | Ion implantation method and device |
-
2007
- 2007-06-15 GB GB0711646A patent/GB2443279A/en not_active Withdrawn
- 2007-07-06 TW TW96124809A patent/TW200823955A/en unknown
- 2007-07-17 CN CN2007101360926A patent/CN101110334B/en not_active Expired - Fee Related
- 2007-07-18 KR KR1020070071590A patent/KR20080008269A/en not_active Application Discontinuation
- 2007-07-18 JP JP2007187413A patent/JP2008060549A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10062106A1 (en) * | 2000-12-13 | 2002-06-20 | Rieter Ingolstadt Spinnerei | Aerostatic thrust bearing, for the free end of an open-end spinning rotor shaft with an air gap, has a choke in the air feed to the gap formed by structured micro-pore holes |
| CN1638015A (en) * | 2004-01-09 | 2005-07-13 | 应用材料有限公司 | Improvements relating to ion implantation |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2443279A (en) | 2008-04-30 |
| KR20080008269A (en) | 2008-01-23 |
| GB0711646D0 (en) | 2007-07-25 |
| TW200823955A (en) | 2008-06-01 |
| CN101110334A (en) | 2008-01-23 |
| JP2008060549A (en) | 2008-03-13 |
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