JP2000123773A - Secondary ion mass spectrometer - Google Patents

Secondary ion mass spectrometer

Info

Publication number
JP2000123773A
JP2000123773A JP10295156A JP29515698A JP2000123773A JP 2000123773 A JP2000123773 A JP 2000123773A JP 10295156 A JP10295156 A JP 10295156A JP 29515698 A JP29515698 A JP 29515698A JP 2000123773 A JP2000123773 A JP 2000123773A
Authority
JP
Japan
Prior art keywords
secondary ion
ion
sample
mass spectrometer
primary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10295156A
Other languages
Japanese (ja)
Inventor
Atsushi Kikuma
淳 菊間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP10295156A priority Critical patent/JP2000123773A/en
Publication of JP2000123773A publication Critical patent/JP2000123773A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a secondary ion mass spectrometer capable of analyzing in the depth direction with high sensitivity as well as high depth-resolution. SOLUTION: This mass spectrometer has such as arrangement that an angle αformed by a primary ion beam 2 and the center axis of a secondary ion collecting system 5 and the position of the cross point (p) of both of them are variable by making an ion gun 1 movable when the primary ion beam 2 from the ion gun 1 is irradiated on a sample 4 held on a sample holding part 3, and secondary ions 8 released from the sample 4 are separated based on their mass by a mass spectrograph 6 via the secondary ion collecting system 5 comprising a secondary ion extraction electrode 5a and an electrostatic lens 5b, and detected by a secondary ion detector 7.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術的分野】本発明は、二次イオン質量
分析装置に関し、特に試料への一次イオンの入射角度
と、試料と二次イオン収集系との相対位置の同時最適化
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a secondary ion mass spectrometer and, more particularly, to the simultaneous optimization of the angle of incidence of primary ions on a sample and the relative position between the sample and a secondary ion collection system.

【0002】[0002]

【従来の技術】従来用いられている二次イオン質量分析
装置は、図2に示すようにイオン銃1と試料保持部3と
二次イオン引き出し電極5aおよび静電レンズ5bからなる
二次イオン収集系5と質量分析器6および二次イオン検
出器7などにより主として構成される。試料保持部3に
保持された試料4は可動であるが、イオン銃1および二
次イオン収集系5は固定されており、一次イオンビーム
の入射角度、すなわち一次イオンビームの軌道と試料法
線とのなす角度を変化させるためには、試料4を一次イ
オンビームに対して傾斜させるという方法がとられる。
このため、一次イオンの入射角度を変化させると、それ
に伴って試料4と二次イオン収集系との相対位置、すな
わち両者の間の距離や角度も変化する。
2. Description of the Related Art As shown in FIG. 2, a secondary ion mass spectrometer conventionally used for collecting secondary ions comprises an ion gun 1, a sample holder 3, a secondary ion extraction electrode 5a and an electrostatic lens 5b. It mainly comprises a system 5, a mass analyzer 6, a secondary ion detector 7, and the like. The sample 4 held by the sample holder 3 is movable, but the ion gun 1 and the secondary ion collection system 5 are fixed, and the angle of incidence of the primary ion beam, that is, the trajectory of the primary ion beam, the sample normal and In order to change the angle formed, the method of inclining the sample 4 with respect to the primary ion beam is used.
For this reason, when the incident angle of the primary ions is changed, the relative position between the sample 4 and the secondary ion collection system, that is, the distance and the angle between them are also changed.

【0003】ところで、二次イオン質量分析装置を用い
た深さ方向分析において、深さ方向の分解能を低下させ
る主要因として一次イオンと試料を構成する原子分子と
のミキシングが挙げられる(たとえば、M. G. Dowsett e
t al., J. Vac. Sci. Tech.B, 10, 336 (1992)参照)。
したがって、このミキシングを抑制することは深さ方向
分解能の向上に不可欠である。一般に、二次イオン質量
分析法を用いて深さ方向分析を行う際に、ミキシングを
抑制して高い深さ方向分解能を得るには、一次イオンの
入射角度を大きくすることが有効であることが報告され
ている(たとえば、W. R. Morinville et al., Secondar
y Ion Mass Spectrometry, SIMS XI, Wiley, Chicheste
r 1998, p. 297)。一方、二次イオンの検出効率は試料
4と二次イオン収集系5との相対位置に大きく依存す
る。
[0003] In depth analysis using a secondary ion mass spectrometer, mixing of primary ions with atomic molecules constituting a sample is one of the main factors for lowering the resolution in the depth direction (for example, MG). Dowsett e
tal., J. Vac. Sci. Tech. B, 10, 336 (1992)).
Therefore, suppressing this mixing is indispensable for improving the resolution in the depth direction. In general, when performing depth analysis using secondary ion mass spectrometry, it is effective to increase the incident angle of primary ions in order to suppress mixing and obtain high depth resolution. (E.g., WR Morinville et al., Secondar
y Ion Mass Spectrometry, SIMS XI, Wiley, Chicheste
r 1998, p. 297). On the other hand, the secondary ion detection efficiency largely depends on the relative position between the sample 4 and the secondary ion collection system 5.

【0004】[0004]

【発明が解決しようとする課題】従来の二次イオン質量
分析装置では、イオン銃と二次イオン収集系が固定され
ているため、一次イオンの入射角度と、試料と二次イオ
ン収集系の相対位置を独立に変化させることは不可能で
あった。特に、高い深さ方向分解能を得るために最適な
一次イオン入射角度で分析した場合に試料から放出され
る二次イオンの運動エネルギーの試料法線方向の成分は
小さく、二次イオン収集系に入りにくい。したがって、
試料と二次イオン収集系との距離を小さくすることが望
ましいが、従来の二次イオン質量分析装置においては、
一次イオンの入射角度を決めることによって試料の傾斜
角度も決まってしまうため、試料と二次イオン収集系と
の距離や角度を自由に変化させることはできなかった。
すなわち、高い深さ方向分解能を得るために最適な一次
イオン入射角度と、高い検出感度を得るために最適な試
料および二次イオン収集系の配置を同時に実現すること
は不可能であった。したがって、従来の二次イオン質量
分析装置で一次イオン入射角度を大きくした条件で測定
を行うと、二次イオン強度が著しく低下するという問題
点ある。
In the conventional secondary ion mass spectrometer, since the ion gun and the secondary ion collection system are fixed, the incident angle of the primary ions and the relative angle between the sample and the secondary ion collection system are determined. It was not possible to change the position independently. In particular, when analyzing at the optimal primary ion incidence angle to obtain high depth direction resolution, the component of the kinetic energy of secondary ions emitted from the sample in the normal direction of the sample is small and enters the secondary ion collection system. Hateful. Therefore,
Although it is desirable to reduce the distance between the sample and the secondary ion collection system, in a conventional secondary ion mass spectrometer,
Since the inclination angle of the sample is determined by determining the incident angle of the primary ions, the distance and angle between the sample and the secondary ion collection system cannot be freely changed.
That is, it was impossible to simultaneously achieve the optimal primary ion incidence angle for obtaining high depth direction resolution and the optimal arrangement of the sample and the secondary ion collection system for obtaining high detection sensitivity. Therefore, when the measurement is performed with the conventional secondary ion mass spectrometer under the condition where the primary ion incident angle is increased, there is a problem that the secondary ion intensity is significantly reduced.

【0005】本発明は、一次イオンの入射角度と、試料
と二次イオン収集系の位置関係を独立に変化させること
を可能にすることによって、深さ方向分解能が高く、同
時に検出感度の高い分析が可能な二次イオン質量分析装
置を提供するものである。
SUMMARY OF THE INVENTION The present invention makes it possible to independently change the angle of incidence of primary ions and the positional relationship between a sample and a secondary ion collection system, thereby achieving high resolution in the depth direction and high sensitivity at the same time. To provide a secondary ion mass spectrometer capable of performing the following.

【0006】[0006]

【課題を解決するための手段】上記の問題を解決するた
めに、本発明が採用する手段は、試料保持部に保持され
た試料に、イオン源からの一次イオンビームを照射し
て、試料から放出される二次イオンを、二次イオン引き
出し電極、静電レンズからなる二次イオン収集系を経て
質量分析器で質量分離し、二次イオン検出器で検出する
二次イオン質量分析装置において、イオン銃を可動にす
ることによって、一次イオンビームと前記二次イオン収
集系の中心軸とのなす角度および両者の交点の位置が可
変となるような配置を有することを特徴とする二次イオ
ン質量分析装置として構成される。
Means for Solving the Problems To solve the above-mentioned problems, means adopted by the present invention is to irradiate a sample held by a sample holding section with a primary ion beam from an ion source, In the secondary ion mass spectrometer, the released secondary ions are mass-separated by a mass analyzer through a secondary ion extraction electrode, a secondary ion collection system including an electrostatic lens, and detected by a secondary ion detector. Secondary ion mass, characterized in that the ion gun is movable so that the angle between the primary ion beam and the central axis of the secondary ion collection system and the position of the intersection of the two are variable. It is configured as an analyzer.

【0007】試料保持部が単に試料を台上に載せて露出
させる型式の場合には問題とならないが、試料保持部が
開口部を有しそれより下の面で試料を保持する型式の場
合には、開口部を可能な限り広く取ることが、より高角
度の入射を可能にするので好ましい。なお、従来の二次
イオン質量分析装置においても同様に、試料保持部の開
口部を広げることで、より高角度の入射が可能となる
が、本発明の装置の方が好適であることは前記の通りで
ある。
This is not a problem when the sample holder is of a type in which a sample is simply placed on a table and exposed, but in the case of a type in which the sample holder has an opening and holds the sample on a lower surface. It is preferable to make the opening as wide as possible because it allows a higher angle of incidence. In the same manner, in the conventional secondary ion mass spectrometer, similarly, by widening the opening of the sample holding portion, it is possible to perform incidence at a higher angle, but it is said that the device of the present invention is more preferable. It is as follows.

【0008】[0008]

【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。
Next, embodiments of the present invention will be described with reference to the drawings.

【0009】[0009]

【実施例1】図1は本発明の一実施例の構成図である。
図1において、イオン銃1から引き出された一次イオン
ビーム2は試料保持部3に保持された試料4に照射され
る。試料4から放出された二次イオン8は、二次イオン
引き出し電極5aおよび静電レンズ5bからなる二次イオン
収集系5を経て質量分析器6で質量分離され二次イオン
検出器7で検出される。ここで、イオン銃1は超高真空
対応のベローズ10によって可動になっており、一次イオ
ンの軌道と二次イオン収集系の中心軸のなす角αおよび
両者の交点pの位置を変化させられるようになってい
る。これにより、二次イオンの検出感度が最も高くなる
ように試料4と二次イオン収集系5の相対位置を維持した
状態で、一次イオンの入射角度だけを独立に変化させる
ことが可能になっている。
Embodiment 1 FIG. 1 is a block diagram of an embodiment of the present invention.
In FIG. 1, a primary ion beam 2 extracted from an ion gun 1 irradiates a sample 4 held in a sample holding unit 3. The secondary ions 8 released from the sample 4 pass through a secondary ion collection system 5 including a secondary ion extraction electrode 5a and an electrostatic lens 5b, are separated in mass by a mass analyzer 6, and detected by a secondary ion detector 7. You. Here, the ion gun 1 is movable by a bellows 10 corresponding to an ultra-high vacuum, so that the position of the angle α between the trajectory of the primary ion and the central axis of the secondary ion collection system and the intersection point p of both can be changed. It has become. This makes it possible to independently change only the incident angle of the primary ion while maintaining the relative position between the sample 4 and the secondary ion collection system 5 so that the detection sensitivity of the secondary ion is maximized. I have.

【0010】次に、この装置を用いて高い深さ方向分解
能で深さ方向分析を行う場合について説明する。前述し
たように深さ方向分解能の向上には、一次イオンビーム
の入射角度を大きくすることが有効である。高い深さ方
向分解能を得るためには、特に入射角度が80°から90°
の範囲であることが望ましい。本装置を用いれば、試料
を水平に保ったままで、イオン銃1の位置を動かすこと
によって一次イオンの入射角度を深さ方向分解能が最適
となるように設定することが可能である。この方法を用
いれば、試料と二次イオン収集系との距離や角度は、試
料の傾斜角による制限を受けることなしに任意に選ぶこ
とができ、検出感度が最適になる場所を選択したうえ
で、一次イオンの入射角度を設定することができる。こ
れにより、深さ方向分析を高い深さ分解能かつ高い検出
限界で行うことが可能となる。
Next, a case in which a depth direction analysis is performed with a high resolution in the depth direction using this apparatus will be described. As described above, increasing the incident angle of the primary ion beam is effective for improving the resolution in the depth direction. In order to obtain a high depth resolution, the angle of incidence must be especially between 80 ° and 90 °.
Is desirably within the range. By using this apparatus, it is possible to set the incident angle of the primary ions by moving the position of the ion gun 1 while keeping the sample horizontal so that the resolution in the depth direction is optimized. By using this method, the distance and angle between the sample and the secondary ion collection system can be arbitrarily selected without being limited by the tilt angle of the sample, and after selecting a location where the detection sensitivity is optimal. , The incident angle of the primary ions can be set. This makes it possible to perform the depth direction analysis with a high depth resolution and a high detection limit.

【0011】[0011]

【実施例2】図3に、従来の装置と本発明の装置による
深さ方向分析の結果を比較した例を示す。図3の例は、
一次イオンとして加速電圧1.5kVのCs+を用いて、Si基板
上に形成された厚さ45Åの酸化膜のOの深さ方向分布をC
sO+を検出することにより測定したものである。図3(a)
は従来の装置により、一次イオンの入射角度75°で測
定したものであり、図3(b)は本発明の装置により入射
角度85°で測定したものである。酸化膜と基板との界面
におけるCsO+の強度の減衰は、本発明の装置を用いた方
が従来の装置よりも明らかに急峻である。本発明の装置
を用いた場合の深さ分解能は12Å、従来の装置を用いた
場合の深さ分解能は21Åであり、本発明の装置によっ
て、深さ方向分解能が著しく向上することがわかる。ま
た、CsO+のプロファイルは本発明の方が強度のばらつき
が少ないことから、測定精度も本発明の方が従来法に比
べて高いことがわかる。
[Embodiment 2] FIG. 3 shows an example in which the results of the depth direction analysis by the conventional apparatus and the apparatus of the present invention are compared. The example in FIG.
Using Cs + with an accelerating voltage of 1.5 kV as the primary ion, the depth distribution of O in the 45 ° -thick oxide film formed on the Si
It was measured by detecting sO + . Fig. 3 (a)
Fig. 3 shows a measurement at an incident angle of primary ion of 75 ° using a conventional apparatus, and Fig. 3B shows a measurement at an incident angle of 85 ° using the apparatus of the present invention. The attenuation of the intensity of CsO + at the interface between the oxide film and the substrate is clearly steeper with the device of the present invention than with the conventional device. The depth resolution when the apparatus of the present invention is used is 12 °, and the depth resolution when the conventional apparatus is used is 21 °. It can be seen that the resolution in the depth direction is significantly improved by the apparatus of the present invention. In addition, since the profile of CsO + has less variation in intensity in the present invention, it can be seen that the measurement accuracy is higher in the present invention than in the conventional method.

【0012】[0012]

【発明の効果】以上説明したように本発明は、二次イオ
ン質量分析装置において、イオン銃を可動にすることに
よって、一次イオンの入射角度と、試料と二次イオン収
集系との相対位置を独立に変化させて、高深さ分解能と
同時に高感度の深さ方向分析が可能となるという効果を
有する。
As described above, according to the present invention, in the secondary ion mass spectrometer, by making the ion gun movable, the incident angle of the primary ions and the relative position between the sample and the secondary ion collection system are determined. By changing them independently, there is an effect that high-resolution depth direction analysis can be performed simultaneously with high depth resolution.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る二次イオン質量分析装置の構成の
概要を示す略解図。
FIG. 1 is a schematic diagram showing an outline of a configuration of a secondary ion mass spectrometer according to the present invention.

【図2】従来の二次イオン質量分析装置の構成の概要を
示す略解図。
FIG. 2 is a schematic diagram showing an outline of a configuration of a conventional secondary ion mass spectrometer.

【図3】従来の装置(a)と本発明の装置(b)による深さ方
向分析の結果を示すグラフ。
FIG. 3 is a graph showing the results of depth analysis using a conventional device (a) and the device (b) of the present invention.

【符号の説明】[Explanation of symbols]

1 イオン銃 2 一次イオンビーム 3 試料保持部 4 試料 5a 二次イオン引き出し電極 5b 静電レンズ 5 二次イオン収集系 6 質量分析器 7 二次イオン検出器 8 二次イオン 9 真空槽 10 ベローズ 1 Ion gun 2 Primary ion beam 3 Sample holder 4 Sample 5a Secondary ion extraction electrode 5b Electrostatic lens 5 Secondary ion collection system 6 Mass analyzer 7 Secondary ion detector 8 Secondary ion 9 Vacuum tank 10 Bellows

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 試料保持部に保持された試料に、イオン
源からの一次イオンビームを照射して、試料から放出さ
れる二次イオンを、二次イオン引き出し電極、静電レン
ズからなる二次イオン収集系を経て質量分析器で質量分
離し、二次イオン検出器で検出する二次イオン質量分析
装置において、イオン銃を可動にすることによって、一
次イオンビームと前記二次イオン収集系の中心軸とのな
す角度および両者の交点の位置が可変となるような配置
を有することを特徴とする二次イオン質量分析装置。
A sample held in a sample holder is irradiated with a primary ion beam from an ion source, and secondary ions emitted from the sample are converted into a secondary ion formed by a secondary ion extraction electrode and an electrostatic lens. In a secondary ion mass spectrometer that separates mass by a mass analyzer through an ion collection system and detects by a secondary ion detector, by moving an ion gun, the primary ion beam and the center of the secondary ion collection system A secondary ion mass spectrometer having an arrangement in which an angle between the axis and an intersection between the two is variable.
JP10295156A 1998-10-16 1998-10-16 Secondary ion mass spectrometer Withdrawn JP2000123773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10295156A JP2000123773A (en) 1998-10-16 1998-10-16 Secondary ion mass spectrometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10295156A JP2000123773A (en) 1998-10-16 1998-10-16 Secondary ion mass spectrometer

Publications (1)

Publication Number Publication Date
JP2000123773A true JP2000123773A (en) 2000-04-28

Family

ID=17816989

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2000123773A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105813B2 (en) 2003-09-15 2006-09-12 Samsung Electronics Co., Ltd. Method and apparatus for analyzing the composition of an object
JP2008021504A (en) * 2006-07-12 2008-01-31 Fujitsu Ltd Irradiation direction-variable ion irradiation device, and secondary ion mass spectrometer
JP2009053169A (en) * 2007-08-29 2009-03-12 Fujitsu Ltd Highly precise depth-directional analytical method and analyzer by secondary ion mass spectroscopic technique
CN103065793A (en) * 2011-10-19 2013-04-24 三星电机株式会社 Multilayer ceramic electronic component

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105813B2 (en) 2003-09-15 2006-09-12 Samsung Electronics Co., Ltd. Method and apparatus for analyzing the composition of an object
JP2008021504A (en) * 2006-07-12 2008-01-31 Fujitsu Ltd Irradiation direction-variable ion irradiation device, and secondary ion mass spectrometer
JP2009053169A (en) * 2007-08-29 2009-03-12 Fujitsu Ltd Highly precise depth-directional analytical method and analyzer by secondary ion mass spectroscopic technique
CN103065793A (en) * 2011-10-19 2013-04-24 三星电机株式会社 Multilayer ceramic electronic component

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