CN101106163B - Rear electrode for crystal silicon solar battery - Google Patents
Rear electrode for crystal silicon solar battery Download PDFInfo
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- CN101106163B CN101106163B CN2007100230234A CN200710023023A CN101106163B CN 101106163 B CN101106163 B CN 101106163B CN 2007100230234 A CN2007100230234 A CN 2007100230234A CN 200710023023 A CN200710023023 A CN 200710023023A CN 101106163 B CN101106163 B CN 101106163B
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Abstract
A back electrode for crystalline silicon solar cell comprises two parallel and interval distributed electrodes, the structures of the two electrodes are identical, each electrode is formed by a plurality of conductor units linearly arranged like the Chinese character 'fei', the two adjacent 'fei' -shaped conductor units are connected by a connecting conductor, and the extending end of the 'fei' -shaped conductor units at the up and down ends are also provided with the connecting conductors; the 'fei' -shaped conductor units are composed of main electrode bands and branch electrode bands, the branch electrode bands are distributed on the two sides of the main electrode bands at the same intervals, the width of the connecting conductors is smaller than the width of the main electrode bands,and the edges of the connecting conductors are staggered with the left and right edges of the main electrode bands. By using the back electrode in the invention, the back electrode of the cell processed by high temperature can not only form good Ohmic contact and provide good electric properties for the cell, but also resolve three difficult problems of the dropping of the back electrode of the cell, the arbitrary cutting and reusing of the cell, and the bending of the cell along the electrode direction.
Description
Technical field:
The present invention relates to crystal silicon solar energy battery, relate in particular to rear electrode for crystal silicon solar battery.
Background technology:
At present, in existing crystal silicon solar energy battery, its back electrode adopts following several versions usually: cabinet-type electrode, wide continuous electrode, continuous " non-" font electrode etc.For the cabinet-type electrode, though battery tangible buckling phenomenon can not occur after high-temperature process, electrode easily comes off, and is unfavorable for that the battery cutting utilizes (cutting into smaller batteries) again; For wide continuous electrode and continuous " non-" font electrode, utilize fully again though battery can cut into baby battery arbitrarily, and the electrode of battery can not come off yet, battery is after high-temperature process, and battery is crooked serious along electrode direction, should not encapsulate.
Summary of the invention:
In order to overcome existing crystal silicon solar energy battery, the invention provides a kind of rear electrode for crystal silicon solar battery structure because of the unreasonable above-mentioned deficiency of bringing of its back electrode structural design.Adopt this back electrode distributed architecture, crystal silicon solar energy battery is after high-temperature process, back electrode can not only form good ohmic contact, make battery have electrical property preferably, and the back electrode that can solve battery simultaneously come off, any cutting of battery utilizes again, battery is along the crooked Three Difficult Issues of electrode direction.
The technical solution adopted in the present invention is:
Rear electrode for crystal silicon solar battery of the present invention, it is characterized in that: comprise two electrodes parallel and spaced apart, the structure of two strip electrodes is identical, every strip electrode is formed by several " non-" font electric conductor unit interval linear array, between adjacent two " non-" font electric conductor unit, link to each other by bonding conductor, last, the epitaxial end of " non-" font electric conductor unit at following two ends also is provided with bonding conductor, described " non-" font electric conductor unit is made up of main body electrode band and branch electrodes band, the branch electrodes band is distributed in the both sides of main body electrode band equally spacedly, the width of bonding conductor is less than the width of main body electrode band, and bonding conductor is between the limit, the left and right sides of main body electrode band.
Further, described electrode total length is than little (8～the 12) ± 1mm of silicon chip length dimension.
Further, two distance between electrodes than two electrode spacing silicon chip corresponding sides apart from sum less than 1mm or 2mm.
Further, the spacing between described " non-" font electric conductor unit is 2mm～4mm.
Further, the main body electrode band of described " non-" font electric conductor unit be shaped as rectangle, its width is 3mm～4mm, the width of branch electrodes band is 0.3mm～0.5mm, length is 1.5mm～2.5mm.
Further, described bonding conductor is made up of two thin wires parallel and spaced apart, and the live width of thin wire is 0.3mm～0.5mm, and the outside of two thin wires is between the limit, the left and right sides of main body electrode band.
Because the present invention has drawn the advantage of existing " non-" font electrode continuously and cabinet-type electrode, overcome the shortcoming that they exist separately, rear electrode for crystal silicon solar battery adopts structure of the present invention, after battery partly damages, can battery be cut into smaller batteries arbitrarily along the back electrode direction, every baby battery all has the back electrode that connection is surely leaned on, and does not influence the welding of welding and the collection of electric current.Because main body electrode band both sides are provided with the branch electrodes band, aluminium back of the body field covers on the branch electrodes band, and the solvent of electrode has enough spaces to discharge in the sintering process, and electrode can not come off, and helps electric current simultaneously yet and collects by the branch electrodes band.Because entire electrode is formed by several " non-" font electric conductor unit interval linear array, link to each other by thinner bonding conductor between each " non-" font electric conductor unit, battery is behind high temperature sintering, can not form continuous stress zone, battery can not produce serious buckling phenomenon along electrode direction, helps cell package.In a word, rear electrode for crystal silicon solar battery adopts structure of the present invention, battery neither can come off through the high temperature sintering rear electrode, battery can not produce serious crooked along electrode direction yet, battery can cut into baby battery arbitrarily and utilize, and it can thoroughly overcome the deficiency that the existing back electrode structure of crystal silicon solar energy battery exists.
Description of drawings:
Fig. 1 is the back electrode distribution schematic diagram of monocrystaline silicon solar cell;
Fig. 2 is the structural representation of two back electrodes among Fig. 1;
Fig. 3 is the structural representation of font electric conductor unit, top among Fig. 2 " non-";
Among the figure: the 1-silicon chip; The 2-electrode; 21-" non-" font electric conductor unit; 211-main body electrode band; 212-branch electrodes band; The 22-bonding conductor; A is the length (up and down) of silicon chip; B be silicon chip width (about); C is the distance of back electrode apart from the silicon chip corresponding sides; The D following distance that is back electrode on the silicon chip; E is two distances between back electrode; F be about the length of " non-" font electric conductor unit extension bonding conductor; G is the length of bonding conductor between two " non-" font electric conductor unit; H is the electrode total length; I is the spacing distance of branch electrodes interband; J is the width of main body electrode band; K is the length of branch electrodes band; T is the width of branch electrodes band; L is the length of " non-" font electric conductor unit; M is the spacing distance between two thin wires; N is the live width of thin wire;
Embodiment:
Be example with 125 * 125 square millimeters of monocrystaline silicon solar cells below, describe the specific embodiment of the present invention in detail.
As accompanying drawing 1～shown in Figure 3, described monocrystaline silicon solar cell comprises silicon chip 1 and electrode 2, article two, the electrode 2 of parallel interval is distributed in the back side of silicon chip 1, the structure of two strip electrodes 2 is identical, every strip electrode 2 is all formed by five " non-" font electric conductor unit, 21 interval linear array, spacing G between " non-" font electric conductor unit 21 is 2mm～4mm, this example is 3mm, between adjacent two " non-" font electric conductor unit 21, link to each other by bonding conductor 22, last, the epitaxial end of " non-" font electric conductor unit 21 at following two ends also is provided with bonding conductor 22, described " non-" font electric conductor unit 21 is made up of main body electrode band 211 and branch electrodes band 212, branch electrodes band 212 equidistantly is distributed in the both sides of main body electrode band 211, the cross sectional shape of main body electrode band 211 is a rectangle, its width J is 3mm～4mm, this example is 3mm, the width T of branch electrodes band 212 is 0.3mm～0.5mm, this example is 0.3mm, the length K of branch electrodes band 212 is 1.5mm～2.5mm, this example is 1.5mm, the bonding conductor 22 that is arranged between each " non-" font electric conductor unit 21 is made up of the thin wire that two parallel interval distribute, the live width N of thin wire is 0.3mm～0.5mm, this example is 0.3mm, spacing distance M is 0.3mm～0.5mm, this example is 0.4mm, and the outside of two thin wires is between the limit, the left and right sides of main body electrode band 211.Described electrode total length H is than the little 12 ± 1mm of silicon chip length A size, electrode total length H is A-12=125-12=113+1mm in this example, two distance between electrodes E are than the little 1mm of distance C sum or the 2mm of two electrode spacing silicon chip edges, and two distance between electrodes are C+C-1=30+30-1=59mm or C+C-2=30+30-2=58mm in this example.
Embodiments of the present invention are a lot, if adopt structure of the present invention or etc. all technical schemes of functional structure all belong to protection range.
Claims (6)
1. rear electrode for crystal silicon solar battery, it is characterized in that: comprise two electrodes parallel and spaced apart (2) that are positioned at the silicon chip back side, the structure of two strip electrodes (2) is identical, every strip electrode (2) is formed by several interval, " non-" font electric conductor unit (21) linear array, between adjacent two " non-" font electric conductor unit (21), link to each other by bonding conductor (22), last, the epitaxial end of " non-" font electric conductor unit (21) at following two ends also is provided with bonding conductor (22), described " non-" font electric conductor unit (21) is made up of main body electrode band (211) and branch electrodes band (212), branch electrodes band (212) is distributed in the both sides of main body electrode band (211) equally spacedly, the width of bonding conductor (22) is less than the width of main body electrode band (211), and bonding conductor (22) is positioned between the limit, the left and right sides of main body electrode band (211).
2. rear electrode for crystal silicon solar battery according to claim 1 is characterized in that: described electrode total length (H) is than little (8～the 12) ± 1mm of silicon chip length (A) size.
3. rear electrode for crystal silicon solar battery according to claim 1 is characterized in that: the spacing (E) between two electrodes (2) is than distance (C) sum little 1mm or the 2mm of two electrodes (2) apart from the silicon chip corresponding sides.
4. rear electrode for crystal silicon solar battery according to claim 1 is characterized in that: the spacing (G) between described " non-" the font electric conductor unit (21) is 2～4mm.
5. rear electrode for crystal silicon solar battery according to claim 1, it is characterized in that: main body electrode band (211) be shaped as rectangle, its width (J) is 3～4mm, and the width (T) of branch electrodes band (212) is 0.3～0.5mm, and length (K) is 1.5～2.5mm.
6. rear electrode for crystal silicon solar battery according to claim 1, it is characterized in that: described bonding conductor (22) is made up of the thin wire that two parallel interval distribute, the live width of thin wire is 0.3～0.5mm, and the outside of two thin wires is positioned between the limit, the left and right sides of main body electrode band (211).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100230234A CN101106163B (en) | 2007-05-31 | 2007-05-31 | Rear electrode for crystal silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100230234A CN101106163B (en) | 2007-05-31 | 2007-05-31 | Rear electrode for crystal silicon solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101106163A CN101106163A (en) | 2008-01-16 |
| CN101106163B true CN101106163B (en) | 2011-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2007100230234A Expired - Fee Related CN101106163B (en) | 2007-05-31 | 2007-05-31 | Rear electrode for crystal silicon solar battery |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2500948A4 (en) | 2009-11-13 | 2015-10-14 | Mitsubishi Electric Corp | Solar cell |
| CN102254994A (en) * | 2011-07-05 | 2011-11-23 | 浙江鸿禧光伏科技股份有限公司 | Back electrode design method |
| CN102254993A (en) * | 2011-07-05 | 2011-11-23 | 浙江鸿禧光伏科技股份有限公司 | Back electrode design method for reducing unit consumption |
| CN102270671A (en) * | 2011-08-31 | 2011-12-07 | 无锡赛晶太阳能有限公司 | Back electrode structure of silicon solar cell |
| CN104103708B (en) * | 2013-04-02 | 2017-02-08 | 浙江鸿禧能源股份有限公司 | Back electrode back electric field structure design method for improving open circuit voltage |
| CN104241407A (en) * | 2014-09-26 | 2014-12-24 | 中利腾晖光伏科技有限公司 | Electrode of crystalline silicon solar cell module, preparation method and solar cell module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4590327A (en) * | 1984-09-24 | 1986-05-20 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
| JP2000164903A (en) * | 1998-11-27 | 2000-06-16 | Kyocera Corp | Solar battery |
| JP2001068699A (en) * | 1999-08-30 | 2001-03-16 | Kyocera Corp | Solar cell |
| US6573445B1 (en) * | 1998-11-23 | 2003-06-03 | Stichting Energieonderzoek Centrum Nederland | Method for manufacturing a metallization pattern on a photovoltaic cell |
| CN201048133Y (en) * | 2007-05-31 | 2008-04-16 | 荀建华 | Crystalline silicon solar cell back electrode |
-
2007
- 2007-05-31 CN CN2007100230234A patent/CN101106163B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4590327A (en) * | 1984-09-24 | 1986-05-20 | Energy Conversion Devices, Inc. | Photovoltaic device and method |
| US6573445B1 (en) * | 1998-11-23 | 2003-06-03 | Stichting Energieonderzoek Centrum Nederland | Method for manufacturing a metallization pattern on a photovoltaic cell |
| JP2000164903A (en) * | 1998-11-27 | 2000-06-16 | Kyocera Corp | Solar battery |
| JP2001068699A (en) * | 1999-08-30 | 2001-03-16 | Kyocera Corp | Solar cell |
| CN201048133Y (en) * | 2007-05-31 | 2008-04-16 | 荀建华 | Crystalline silicon solar cell back electrode |
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| CN101106163A (en) | 2008-01-16 |
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Effective date of registration: 20090213 Address after: Jiangsu city of Jintan Province Yao Tang Zhen Jin Hongwu Road No. 18 Applicant after: Changzhou EGing Photovoltaic Technology Co., Ltd. Address before: Jiangsu city of Jintan Province Yao Tang Town Industrial Park Jin Wu Road No. 18 Applicant before: Xi Jian Hua Co-applicant before: Liu Zhigang |
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