CN103456803A - Front electrode of crystalline silicon solar cell - Google Patents
Front electrode of crystalline silicon solar cell Download PDFInfo
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- CN103456803A CN103456803A CN2013104381563A CN201310438156A CN103456803A CN 103456803 A CN103456803 A CN 103456803A CN 2013104381563 A CN2013104381563 A CN 2013104381563A CN 201310438156 A CN201310438156 A CN 201310438156A CN 103456803 A CN103456803 A CN 103456803A
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- grid line
- line metal
- metal electrode
- main grid
- electrode
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 223
- 239000002184 metal Substances 0.000 claims abstract description 223
- 230000011218 segmentation Effects 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000002002 slurry Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012913 prioritisation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a front electrode of a crystalline silicon solar cell. The front electrode of the crystalline silicon solar cell comprises a plurality of fine grid line metal electrodes and multiple rows of main grid line metal electrodes, wherein the fine grid line metal electrodes are parallel to one another, the main grid line metal electrodes are perpendicular to the fine grid line metal electrodes and are parallel to one another, each row of main grid line metal electrodes are formed by multiple sections of main grid line metal electrode subsections, and the disconnected parts among the main grid line metal electrode subsections in each row of the main grid line metal electrodes are located in a blank area between two adjacent fine grid line metal electrodes. According to the front electrode of the crystalline silicon solar cell, the consumption of metal paste of main grids is reduced effectively, the distance of the fine grid line metal electrodes converging to the main grid line metal electrodes is not increased as well, possibility for reducing the series resistance of cells is provided, and cell efficiency is improved.
Description
Technical field
The present invention relates to the front electrode of a kind of crystal-silicon solar cell.
Background technology
At present, the front electrode of crystal-silicon solar cell generally has many thin grid line metal electrodes, for collecting the photogenerated current of solar cell.Generally also be provided with 2～3 main grid line metal electrodes perpendicular to the thin grid line metal electrode direction, the electric current that this main grid line metal electrode is collected thin grid line metal electrode is confluxed, and can be used for welding and is welded to connect, and carries out the assembly preparation.Yet also there are several problems at present in the design of main grid line metal electrode: 1, the front surface metal electrode has occupied approximately 5～7% area, and the solar cell front surface has been formed and blocked; 2, front surface metal electrode zone footprint area means more greatly larger silver slurry consumption; 3, the spacing between main grid line metal electrode is larger, is unfavorable for reducing the serial loss of battery; The reason of these several respects has restricted the lifting of current commercialization efficiency of solar cell and the control of cost.
Summary of the invention
Technical problem to be solved by this invention is: provide a kind of crystal-silicon solar cell front electrode, reduce front surface metal electrode blocking battery, reduce front surface metal electrode silver slurry consumption, for the series resistance that reduces battery provides possibility, improve battery efficiency simultaneously.
The technical solution adopted for the present invention to solve the technical problems is: electrode before a kind of crystal-silicon solar cell, comprise the many thin grid line metal electrodes that are parallel to each other and the main grid line metal electrode be parallel to each other perpendicular to the multiple row of thin grid line metal electrode, every row main grid line metal electrode consists of the segmentation of multistage main grid line metal electrode, the white space of breaking part between two adjacent thin grid line metal electrodes between the main grid line metal electrode segmentation in every row main grid line metal electrode.Both effectively reduced the metal paste consumption of main grid, and do not increased again thin grid line metal electrode and conflux to the distance of main grid line metal electrode.
Main grid line metal electrode is segmented into complete interstitital texture, or is engraved structure.Engraved structure can further reduce the consumption of metal paste.
Be parallel to the direction of thin grid line metal electrode, main grid line metal electrode equidistantly distributes.
In the direction perpendicular to thin grid line metal electrode, the breaking part between the main grid line metal electrode segmentation in every row main grid line metal electrode equidistantly distributes.
Be parallel to the direction of thin grid line metal electrode, the breaking part between the segmentation of main grid line metal electrode is interspersed or is regularly multiple row and distributes.
The columns of main grid line metal electrode is greater than 4, and the radical of thin grid line metal electrode is greater than 30, and the hop count of every row main grid line metal electrode is greater than 2.By increasing the radical of main grid line metal electrode, dwindle the spacing between main grid line metal electrode, reduce electric current and flow to the series resistance loss of main grid line from thin grid line, improve the conversion efficiency of battery, the spacing simultaneously reduced between main grid line metal electrode can also reduce optimized thin grid line number, reduces the consumption of the metal paste of thin grid line.
Be parallel to the direction of thin grid line metal electrode, the spacing 0.1～200mm between main grid line metal electrode, the width of main grid line metal electrode is 0.1mm～3mm.
Thin grid line metal electrode equidistantly distributes, and the width of thin grid line metal electrode is 1～100 μ m, and the spacing between thin grid line metal electrode is 0.1～10mm.
Before this crystal-silicon solar cell, one of them prioritization scheme of battery is: the columns of main grid line metal electrode is 5, the hop count of every row main grid line metal electrode is 3, be parallel to the direction of thin grid line metal electrode, main grid line metal electrode equidistantly distributes, and the breaking part between the segmentation of main grid line metal electrode is regularly multiple row and distributes; In the direction perpendicular to thin grid line metal electrode, the breaking part between the main grid line metal electrode segmentation in every row main grid line metal electrode equidistantly distributes.
Before this crystal-silicon solar cell, another prioritization scheme of battery is: the columns of main grid line metal electrode is 6, the hop count of every row main grid line metal electrode is 3, be parallel to the direction of thin grid line metal electrode, main grid line metal electrode equidistantly distributes, and the breaking part between the segmentation of main grid line metal electrode is regularly multiple row and distributes; In the direction perpendicular to thin grid line metal electrode, the breaking part between the main grid line metal electrode segmentation in every row main grid line metal electrode equidistantly distributes.
The invention has the beneficial effects as follows: contrast conventional solar cell front surface patterns,
1, be parallel to the direction of thin grid line metal electrode, by increasing the hop count of main grid line metal electrode, dwindle the spacing between main grid line metal electrode, reduce electric current and flow to the series resistance loss of main grid line from thin grid line, improve the conversion efficiency of battery, reduce simultaneously and can also reduce optimized thin grid line number between the main grid line metal electrode of this direction, reduce the consumption of the metal paste of thin grid line;
2, perpendicular to thin grid line direction, adopt the main grid line metal electrode of segmentation to replace whole main grid line metal electrode of tradition, and the white space of breaking part between two adjacent thin grid line metal electrodes between the segmentation of main grid line metal electrode, both effectively reduced the metal paste consumption of main grid, and do not increased again thin grid line metal electrode and conflux to the distance of main grid line metal electrode.
The accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described;
Fig. 1 is the structural representation of electrode before current conventional solar cell;
Fig. 2 is the structural representation of the array main grid line metal electrode of embodiments of the invention 1;
Fig. 3 is the structural representation of the array main grid line metal electrode of embodiments of the invention 2;
Fig. 4 is the structural representation of the alternating expression main grid line metal electrode of embodiments of the invention 3;
Fig. 5 is the structural representation of the main grid line metal electrode of hollow out form of the present invention;
Wherein, 1. main grid line metal electrode, the segmentation of 1-1. main grid line metal electrode, 1-2. hollow dots, 2. thin grid line metal electrode, 3. thin grid line central point.
Embodiment
Electrode before a kind of crystal-silicon solar cell, comprise the many thin grid line metal electrodes that are parallel to each other 2 and the main grid line metal electrode 1 be parallel to each other perpendicular to the multiple row of thin grid line metal electrode 2, every row main grid line metal electrode 1 consists of the segmentation of multistage main grid line metal electrode, the white space of breaking part between two adjacent thin grid line metal electrodes 2 between main grid line metal electrode segmentation 1-1 in every row main grid line metal electrode 1, between the segmentation of main grid line metal electrode without any connection.
Main grid line metal electrode is segmented into complete interstitital texture, or is engraved structure.Engraved structure can further reduce the consumption of metal paste.The structure of the main grid line metal electrode of hollow out form as shown in Figure 5, a plurality of hollow dots 1-2 of regular distribution on main grid line metal electrode.
In the direction that is parallel to thin grid line metal electrode 2, main grid line metal electrode 1 equidistantly distributes, and the breaking part between main grid line metal electrode segmentation 1-1 is interspersed or is regularly multiple row and distributes.In the direction perpendicular to thin grid line metal electrode 2, the breaking part between the main grid line metal electrode segmentation 1-1 in every row main grid line metal electrode 1 is generally equidistant distribution, but do not get rid of non-equidistance, does not distribute.
In the direction that is parallel to thin grid line metal electrode 2, the spacing 0.1～200mm between main grid line metal electrode 1.The width of main grid line metal electrode 1 is 0.1mm～3mm.Thin grid line metal electrode 2 equidistantly distributes, and the width of thin grid line metal electrode 2 is 1～100 μ m, and the spacing between thin grid line metal electrode 2 is 0.1～10mm.
The columns of main grid line metal electrode 1 is greater than 4, and the hop count of every row main grid line metal electrode 1 is greater than 2, and the total number of all main grid line metal electrode segmentation 1-1 is for being greater than 11 sections; The radical of thin grid line metal electrode 2 is for being greater than 30.
The front electrode of conventional silk screen printing as shown in Figure 1, is provided with 3 row main grid line metal electrodes 1 on 156mm * 156mm silicon chip, and 85 thin grid line metal electrodes 2.Wherein, the width of main grid line metal electrode 1 is 1.8mm, and the spacing between main grid line metal electrode 1 is 51mm, for thin grid line central point 3, the thin grid line metal electrode 2 that electric current need to flow through 25.5mm could be collected by main grid line metal electrode 1, and the series resistance of battery is 2.93m Ω .cm.
Embodiment 1: (this Fig. 2 is only signal, and too intensive for avoiding grid line, the part grid line does not show) as shown in Figure 2, solar cell prepared by the silicon chip of 156mm * 156mm specification of take is example.Wherein, electrode before the front surface of solar cell adopts the preparation of silk screen printing silver slurry, be provided with main grid line metal electrode 1, thin grid line metal electrode 2.Wherein, in the direction that is parallel to thin grid line metal electrode 2, main grid line metal electrode 1 equidistantly distributes, and the breaking part between main grid line metal electrode segmentation 1-1 is regularly multiple row and distributes.In the direction perpendicular to thin grid line metal electrode 2, breaking part between main grid line metal electrode segmentation 1-1 in every row main grid line metal electrode 1 equidistantly distributes, have 5 row main grid line metal electrodes 1, the hop count of every row main grid line metal electrode 1 is 3 sections, have 15 sections main grid line metal electrode segmentation 1-1, main grid line metal electrode 1 is 5 * 3 rectangular array formulas and distributes.The width of main grid line metal electrode 1 is 1.0mm., the spacing between the center line of main grid line metal electrode 1 is 30.6mm, is provided with 80 thin grid line metal electrodes that are parallel to each other 2 simultaneously.
Therefore, electric current flows to main grid line metal electrode 1 distance from thin grid line central point 3 is 15.3mm, and much smaller than the 25.5mm of conventional batteries, the series resistance of battery is reduced to 2.4m Ω .cm by 2.9m Ω .cm, with respect to conventional structure, has reduced series resistance.Because the series resistance of thin grid line metal electrode 2 to main grid line metal electrode 1 reduces, therefore the gap variable of thin grid line metal electrode 2 is large, thin grid line metal electrode 2 numbers are 80 in the present embodiment, have saved the metal paste consumption of 5 thin grid line metal electrodes 2 with respect to conventional structure.Simultaneously, for main grid line metal electrode 1, perpendicular to thin grid line metal electrode 2 directions, adopt 3 sections main grid line metal electrode segmentation 1-1 to replace a complete main grid line metal electrode 1, saved main grid part metals slurry consumption.
Embodiment 2: (this Fig. 3 is only signal, and too intensive for avoiding grid line, the part grid line does not show) as shown in Figure 3, solar cell prepared by the silicon chip of 156mm * 156mm specification of take is example.Wherein, electrode before the front surface of solar cell adopts the preparation of silk screen printing silver slurry, be provided with main grid line metal electrode 1, thin grid line metal electrode 2.Wherein, in the direction that is parallel to thin grid line metal electrode 2, main grid line metal electrode 1 equidistantly distributes, and the breaking part between main grid line metal electrode segmentation 1-1 is regularly multiple row and distributes.In the direction perpendicular to thin grid line metal electrode 2, breaking part between main grid line metal electrode segmentation 1-1 in every row main grid line metal electrode 1 equidistantly distributes, have 6 row main grid line metal electrodes 1, the hop count of every row main grid line metal electrode 1 is 24 sections, each section main grid line metal electrode segmentation 1-1 connects 3 thin grid line metal electrodes 2, the width of main grid line metal electrode 1 is 1.0mm, the front electrode of contrast routine as shown in Figure 1 can be saved 1/3 metal paste on main grid line metal electrode 1.Spacing between the center line of main grid line metal electrode 1 is 25.5mm, due to the pitch smaller between main grid line metal electrode 1, adopt 72 thin grid lines in the present embodiment, saved the metal paste consumption of 13 thin grid lines with respect to conventional structure, adopt this front electrode structure, series resistance is 2.7m Ω .cm, with respect to the conventional structure battery, has reduced series resistance.
Embodiment 3: as shown in Figure 4, solar cell prepared by the silicon chip of 156mm * 156mm specification of take is example.Wherein, electrode before the front surface of solar cell adopts the preparation of silk screen printing silver slurry, be provided with main grid line metal electrode 1, thin grid line metal electrode 2.Wherein, in the direction that is parallel to thin grid line metal electrode 2, main grid line metal electrode 1 equidistantly distributes, and the breaking part between main grid line metal electrode segmentation 1-1 is interspersed.In the direction perpendicular to thin grid line metal electrode 2, the breaking part between the main grid line metal electrode segmentation 1-1 in every row main grid line metal electrode 1 equidistantly distributes, and has 6 row main grid line metal electrodes 1, and the hop count of each row main grid line metal electrode 1 is all different.
Claims (10)
1. electrode before a crystal-silicon solar cell, it is characterized in that: comprise the many thin grid line metal electrodes that are parallel to each other (2) and the main grid line metal electrode (1) be parallel to each other perpendicular to the multiple row of thin grid line metal electrode (2), every row main grid line metal electrode (1) consists of the segmentation of multistage main grid line metal electrode, and the breaking part between the main grid line metal electrode segmentation (1-1) in every row main grid line metal electrode (1) is positioned at the white space between two adjacent thin grid line metal electrodes (2).
2. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: described main grid line metal electrode segmentation (1-1) is complete interstitital texture, or is engraved structure.
3. electrode before crystal-silicon solar cell according to claim 1, is characterized in that: in the direction that is parallel to thin grid line metal electrode (2), between main grid line metal electrode (1), equidistantly distribute.
4. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: in the direction that is parallel to thin grid line metal electrode (2), the breaking part between main grid line metal electrode segmentation (1-1) is interspersed or is regularly multiple row and distributes.
5. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: in the direction perpendicular to thin grid line metal electrode (2), the breaking part between the main grid line metal electrode segmentation (1-1) in every row main grid line metal electrode (1) equidistantly distributes.
6. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: the columns of main grid line metal electrode (1) is greater than 4, the radical of thin grid line metal electrode (2) is greater than 30, and the hop count of every row main grid line metal electrode (1) is for being greater than 2.
7. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: in the direction that is parallel to thin grid line metal electrode (2), spacing 0.1～200mm between main grid line metal electrode (1), the width of main grid line metal electrode (1) is 0.1mm～3mm.
8. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: thin grid line metal electrode (2) equidistantly distributes, the width of thin grid line metal electrode (2) is 1～100 μ m, and the spacing between thin grid line metal electrode (2) is 0.1～10mm.
9. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: the columns of main grid line metal electrode (1) is 5, the hop count of every row main grid line metal electrode (1) is 3, in the direction that is parallel to thin grid line metal electrode (2), main grid line metal electrode (1) equidistantly distributes, and the breaking part between main grid line metal electrode segmentation (1-1) is regularly multiple row and distributes; In the direction perpendicular to thin grid line metal electrode (2), the breaking part between the main grid line metal electrode segmentation (1-1) in every row main grid line metal electrode (1) equidistantly distributes.
10. electrode before crystal-silicon solar cell according to claim 1, it is characterized in that: the columns of main grid line metal electrode (1) is 6, the hop count of every row main grid line metal electrode (1) is 3, in the direction that is parallel to thin grid line metal electrode (2), main grid line metal electrode (1) equidistantly distributes, and the breaking part between main grid line metal electrode segmentation (1-1) is regularly multiple row and distributes; In the direction perpendicular to thin grid line metal electrode (2), the breaking part between the main grid line metal electrode segmentation (1-1) in every row main grid line metal electrode (1) equidistantly distributes.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104381563A CN103456803A (en) | 2013-09-23 | 2013-09-23 | Front electrode of crystalline silicon solar cell |
| PCT/CN2014/083397 WO2015039500A1 (en) | 2013-09-23 | 2014-07-31 | Front electrode of crystal silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104381563A CN103456803A (en) | 2013-09-23 | 2013-09-23 | Front electrode of crystalline silicon solar cell |
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| CN103456803A true CN103456803A (en) | 2013-12-18 |
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| CN2013104381563A Pending CN103456803A (en) | 2013-09-23 | 2013-09-23 | Front electrode of crystalline silicon solar cell |
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| WO (1) | WO2015039500A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241407A (en) * | 2014-09-26 | 2014-12-24 | 中利腾晖光伏科技有限公司 | Electrode of crystalline silicon solar cell module, preparation method and solar cell module |
| WO2015039500A1 (en) * | 2013-09-23 | 2015-03-26 | 常州天合光能有限公司 | Front electrode of crystal silicon solar cell |
| CN106910783A (en) * | 2017-03-03 | 2017-06-30 | 广东爱康太阳能科技有限公司 | The back electrode and battery, component, system of p-type PERC double-side solar cells |
| TWI602313B (en) * | 2015-09-25 | 2017-10-11 | Mitsubishi Electric Corp | Solar cell manufacturing method and solar cell |
| JP2018107478A (en) * | 2014-09-30 | 2018-07-05 | エルジー エレクトロニクス インコーポレイティド | Solar cell and solar cell panel including the same |
| US11769842B2 (en) | 2014-09-30 | 2023-09-26 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell and solar cell panel including the same |
| US11848392B2 (en) * | 2021-10-18 | 2023-12-19 | Zhejiang Jinko Solar Co., Ltd. | Solar cell and photovoltaic module |
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| CN202423302U (en) * | 2011-12-21 | 2012-09-05 | 中电电气（南京）光伏有限公司 | Crystalline silicon solar battery |
| WO2012140139A1 (en) * | 2011-04-12 | 2012-10-18 | Schott Solar Ag | Solar cell |
| US20120298171A1 (en) * | 2011-05-23 | 2012-11-29 | Au Optronics Corporation | Solar cell |
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| JP5384164B2 (en) * | 2009-03-27 | 2014-01-08 | 三洋電機株式会社 | Solar cell and solar cell module |
| CN203192805U (en) * | 2013-05-07 | 2013-09-11 | 天威新能源控股有限公司 | Sectional SE etching-mask solar-cell positive-electrode structure |
| CN103456803A (en) * | 2013-09-23 | 2013-12-18 | 常州天合光能有限公司 | Front electrode of crystalline silicon solar cell |
| CN203456476U (en) * | 2013-09-23 | 2014-02-26 | 常州天合光能有限公司 | Crystalline silica solar cell front electrode |
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2013
- 2013-09-23 CN CN2013104381563A patent/CN103456803A/en active Pending
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2014
- 2014-07-31 WO PCT/CN2014/083397 patent/WO2015039500A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2012140139A1 (en) * | 2011-04-12 | 2012-10-18 | Schott Solar Ag | Solar cell |
| US20120298171A1 (en) * | 2011-05-23 | 2012-11-29 | Au Optronics Corporation | Solar cell |
| CN202423302U (en) * | 2011-12-21 | 2012-09-05 | 中电电气（南京）光伏有限公司 | Crystalline silicon solar battery |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015039500A1 (en) * | 2013-09-23 | 2015-03-26 | 常州天合光能有限公司 | Front electrode of crystal silicon solar cell |
| CN104241407A (en) * | 2014-09-26 | 2014-12-24 | 中利腾晖光伏科技有限公司 | Electrode of crystalline silicon solar cell module, preparation method and solar cell module |
| JP2018107478A (en) * | 2014-09-30 | 2018-07-05 | エルジー エレクトロニクス インコーポレイティド | Solar cell and solar cell panel including the same |
| JP2021168405A (en) * | 2014-09-30 | 2021-10-21 | エルジー エレクトロニクス インコーポレイティドLg Electronics Inc. | Solar cell and solar cell panel including the same |
| US11769842B2 (en) | 2014-09-30 | 2023-09-26 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell and solar cell panel including the same |
| TWI602313B (en) * | 2015-09-25 | 2017-10-11 | Mitsubishi Electric Corp | Solar cell manufacturing method and solar cell |
| CN106910783A (en) * | 2017-03-03 | 2017-06-30 | 广东爱康太阳能科技有限公司 | The back electrode and battery, component, system of p-type PERC double-side solar cells |
| US11848392B2 (en) * | 2021-10-18 | 2023-12-19 | Zhejiang Jinko Solar Co., Ltd. | Solar cell and photovoltaic module |
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| Publication number | Publication date |
|---|---|
| WO2015039500A1 (en) | 2015-03-26 |
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