CN110993716A - Inside semiconductor components and parts connection structure of photovoltaic module - Google Patents
Inside semiconductor components and parts connection structure of photovoltaic module Download PDFInfo
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- CN110993716A CN110993716A CN201911371037.4A CN201911371037A CN110993716A CN 110993716 A CN110993716 A CN 110993716A CN 201911371037 A CN201911371037 A CN 201911371037A CN 110993716 A CN110993716 A CN 110993716A
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- semiconductor components
- photovoltaic module
- semiconductor component
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000002184 metal Substances 0.000 claims description 8
- 238000003466 welding Methods 0.000 abstract description 14
- 238000005452 bending Methods 0.000 description 4
- 239000012634 fragment Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a semiconductor component connecting structure in a photovoltaic module, which comprises a plurality of semiconductor components in an array and a plurality of conductive strips for connecting adjacent semiconductor components, wherein a plurality of positive electrodes are attached to one side surface of each semiconductor component, a plurality of negative electrodes are attached to the other side surface of each semiconductor component, the adjacent semiconductor components are alternately arranged in the same plane according to the positive electrodes and the negative electrodes along each transverse row of the array, the conductive strips straightly extend to the negative electrodes/the positive electrodes of the adjacent semiconductor components from the positive electrodes/the negative electrodes of one semiconductor component, the plurality of conductive strips between every two adjacent semiconductor components are arranged in parallel, and the sectional conductive strips are arranged in a staggered manner along the upper surface and the lower surface of the transverse row of. The invention greatly simplifies the current welding scheme, reduces the welding complexity, improves the welding yield, reduces the assembly area, effectively reduces the assembly cost, increases the output power of the component module and improves the output efficiency of the module.
Description
Technical Field
The invention belongs to the technical field of solar energy, relates to arrangement of photovoltaic modules, and particularly relates to a connecting structure of semiconductor components inside a photovoltaic module.
Background
The current battery is connected with the battery through the conductive welding strip, the conductive welding strip needs to be bent between the batteries to ensure the positive electrodes and the negative electrodes of the two batteries to be connected with each other, but the gap between the current assembly design battery and the battery is required to be smaller and better, so that the assembly efficiency is improved, short circuit risks and the risks of battery fragment and hidden crack are generated in the bending area of the conductive welding strip, and the risks of fragment increase along with the fact that the battery is thinner and thinner in the future, and the fragility of the battery fragment can be increased.
Disclosure of Invention
The invention aims to solve the problems in the prior art, and provides a photovoltaic module internal semiconductor component connecting structure which avoids bending phenomenon through a connecting mode of welding at the same side so as to guarantee welding yield.
The purpose of the invention can be realized by the following technical scheme: the utility model provides an inside semiconductor components and parts connection structure of photovoltaic module, includes a plurality of semiconductor components and parts that are the array, and connects adjacently many busbar of semiconductor components and parts, the attached a plurality of positive electrodes in a side of semiconductor components and parts, the attached a plurality of negative electrodes in another side, along each row of array, adjacent semiconductor components and parts arrange according to positive electrode, negative electrode in turn in the coplanar, the busbar is by the positive electrode/negative electrode flat and straight extension of a semiconductor components and parts to the negative electrode/positive electrode of adjacent semiconductor components and parts, and many busbar between every adjacent two semiconductor components and parts are parallel arrangement, along the upper and lower face of array row, the busbar of sectional type is the crisscross and lays.
In the semiconductor component connecting structure inside the photovoltaic module, the positive electrode/negative electrode is used for collecting positive/negative current transmitted from the inside of the semiconductor component. The conductive strip is a conductive metal or non-metal material, and can be in good conductive contact with the positive electrode and the negative electrode of the semiconductor component for collecting and transmitting current. And the adjacent two semiconductor components are connected through the conductive bars so as to ensure that the internal current of the first semiconductor component is transmitted to the second semiconductor component through the conductive bars. In each horizontal row of the array, a plurality of semiconductor components with the same specification are arranged along a straight line in a flush mode.
In the internal semiconductor component connecting structure of the photovoltaic module, the semiconductor component is square or rectangular, the length ratio of the side length of the semiconductor component is 1:1 to 1:20, the long side is used as a reference side, and the positive electrode and the negative electrode are both arranged perpendicular to the reference side.
In the internal semiconductor component connecting structure of the photovoltaic module, the number of the positive electrodes on each semiconductor component is 4 to 20, the number of the negative electrodes on each semiconductor component is 4 to 20, and the number of the positive electrodes and the number of the negative electrodes on the same semiconductor component are the same.
In the above structure for connecting semiconductor devices inside photovoltaic modules, the width of the conductive bar is 0.3mm to 5 mm.
In the above structure for connecting semiconductor devices inside photovoltaic modules, the bus bars have a rectangular or circular or triangular cross section.
In the above structure for connecting semiconductor devices inside a photovoltaic module, the positive electrode is a mesh-shaped metal electrode; the negative electrode is a mesh-shaped metal electrode.
In the above connection structure for the semiconductor components inside the photovoltaic module, the distance between adjacent semiconductor components in each horizontal row of the array is in the range of-0.5 mm to 5 mm.
Compared with the prior art, the connecting structure of the semiconductor component in the photovoltaic module has the following advantages:
the connection structure removes a bending procedure, and ensures circuit connection between the batteries through a special battery scheme. Furthermore, almost no gap can be formed between adjacent semiconductor components. Through a brand-new assembly packaging scheme, the current welding scheme is greatly simplified, the welding complexity is reduced, the welding yield is improved, the assembly area is reduced, the assembly cost is effectively reduced, the output power of a component module is increased, and the output efficiency of the module is improved.
Drawings
Fig. 1 is a schematic plan view of the connection structure of the semiconductor components inside the photovoltaic module.
Fig. 2 is a schematic cross-sectional structure diagram of the connection structure of the semiconductor component inside the photovoltaic module.
In the figure, 1, a semiconductor component; 2. a conductive strip; 3. a positive electrode; 4. and a negative electrode.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
As shown in fig. 1 and fig. 2, the structure for connecting semiconductor devices inside a photovoltaic module includes a plurality of semiconductor devices 1 in an array and a plurality of bus bars 2 connecting adjacent semiconductor devices 1, wherein a plurality of positive electrodes 3 are attached to one side surface of each semiconductor device 1, a plurality of negative electrodes 4 are attached to the other side surface of each semiconductor device 1, adjacent semiconductor devices 1 are alternately arranged in the same plane according to the positive electrodes 3 and the negative electrodes 4 along each horizontal row of the array, the bus bars 2 extend from the positive electrodes 3/the negative electrodes 4 of one semiconductor device 1 to the negative electrodes 4/the positive electrodes 3 of the adjacent semiconductor devices 1, the bus bars 2 between each two adjacent semiconductor devices 1 are arranged in parallel, and the sectional bus bars 2 are alternately arranged along the upper and lower surfaces of the horizontal row of the array.
In the connecting structure of the semiconductor component inside the photovoltaic module, the positive electrode 3/the negative electrode 4 are used for collecting positive/negative current transmitted from the inside of the semiconductor component 1. The conductive strip 2 is a conductive metal or non-metal material, and can be in good conductive contact with the positive electrode 3 and the negative electrode 4 of the semiconductor component 1 for collecting and transmitting current. Two adjacent semiconductor components 1 are connected through the conducting bar 2 to ensure that the current in the first semiconductor component 1 is transmitted to the second semiconductor component 1 through the conducting bar 2. In each row of the array, a plurality of semiconductor components 1 with the same specification are arranged along a straight line and in a flush manner.
The semiconductor component 1 is square or rectangular, the length ratio of the side length is 1:1 to 1:20, the long side is used as a reference side, and the positive electrode 3 and the negative electrode 4 are both arranged perpendicular to the reference side.
The number of the positive electrodes 3 on each semiconductor component 1 is 4 to 20, the number of the negative electrodes 4 on each semiconductor component 1 is 4 to 20, and the number of the positive electrodes 3 and the number of the negative electrodes 4 on the same semiconductor component 1 are the same.
The width of the conductive strip 2 is 0.3mm to 5 mm.
The cross-sectional shape of the conductive strip 2 is rectangular or circular or triangular.
The positive electrode 3 is a net-shaped metal pole; the negative electrode 4 is a mesh-shaped metal pole.
The pitch between adjacent semiconductor components 1 in each row of the array is in the range-0.5 mm to 5 mm.
Compared with the prior art, the connecting structure of the semiconductor component 1 in the photovoltaic module has the following advantages:
the connection structure removes a bending procedure, and ensures circuit connection between the batteries through a special battery scheme. Further, almost no gap can be formed between adjacent semiconductor elements 1. Through a brand-new assembly packaging scheme, the current welding scheme is greatly simplified, the welding complexity is reduced, the welding yield is improved, the assembly area is reduced, the assembly cost is effectively reduced, the output power of a component module is increased, and the output efficiency of the module is improved.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Although the semiconductor component 1 is used more here; a conductive strip 2; a positive electrode 3; negative electrode 4, etc., but does not exclude the possibility of using other terms. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.
Claims (7)
1. The utility model provides an inside semiconductor components and parts connection structure of photovoltaic module, includes a plurality of semiconductor components and parts that are the array, and connects adjacently many busbar of semiconductor components and parts, its characterized in that, a plurality of positive electrodes of the attached of a side of semiconductor components and parts, a plurality of negative electrodes of the attached of another side, along each horizontal row of array, adjacent semiconductor components and parts arrange according to positive electrode, negative electrode are in turn in the coplanar, the busbar is extended to the negative electrode/positive electrode of adjacent semiconductor components and parts by the positive electrode/negative electrode straight of a semiconductor components and parts, and many busbar between every two adjacent semiconductor components and parts are parallel arrangement, along the upper and lower face of array horizontal row, and the busbar of sectional type is the crisscross and lays.
2. The structure for connecting semiconductor components inside a photovoltaic module according to claim 1, wherein the semiconductor components are square or rectangular, the length ratio of the side length of the semiconductor components is 1:1 to 1:20, the long side is used as a reference side, and the positive electrode and the negative electrode are both arranged perpendicular to the reference side.
3. The structure for connecting semiconductor components inside a photovoltaic module according to claim 1, wherein the number of positive electrodes on each semiconductor component is 4 to 20, the number of negative electrodes on each semiconductor component is 4 to 20, and the number of positive electrodes and the number of negative electrodes on the same semiconductor component are the same.
4. The photovoltaic module internal semiconductor component connection structure according to claim 1, wherein the width of the conductive strip is 0.3mm to 5 mm.
5. The photovoltaic module internal semiconductor component connection structure according to claim 1, wherein the conductive bars have a rectangular or circular or triangular cross-sectional shape.
6. The photovoltaic module internal semiconductor component connection structure according to claim 1, wherein the positive electrode is a mesh-shaped metal electrode; the negative electrode is a mesh-shaped metal electrode.
7. The internal semiconductor component connection structure of a photovoltaic module according to claim 1, wherein the spacing between adjacent semiconductor components in each row of the array is in the range of-0.5 mm to 5 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911371037.4A CN110993716A (en) | 2019-12-27 | 2019-12-27 | Inside semiconductor components and parts connection structure of photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911371037.4A CN110993716A (en) | 2019-12-27 | 2019-12-27 | Inside semiconductor components and parts connection structure of photovoltaic module |
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| Publication Number | Publication Date |
|---|---|
| CN110993716A true CN110993716A (en) | 2020-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911371037.4A Pending CN110993716A (en) | 2019-12-27 | 2019-12-27 | Inside semiconductor components and parts connection structure of photovoltaic module |
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| Country | Link |
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| CN (1) | CN110993716A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021120655A1 (en) * | 2019-12-17 | 2021-06-24 | 杭州福斯特应用材料股份有限公司 | Double-sided cell assembly structure |
-
2019
- 2019-12-27 CN CN201911371037.4A patent/CN110993716A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021120655A1 (en) * | 2019-12-17 | 2021-06-24 | 杭州福斯特应用材料股份有限公司 | Double-sided cell assembly structure |
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Address after: 314416 89 Yuanhong Road, Yuanhua Town, Haining City, Jiaxing, Zhejiang Applicant after: Jingke energy (Haining) Co.,Ltd. Applicant after: JINKO SOLAR HOLDING Co.,Ltd. Address before: 314416 89 Yuanhong Road, Yuanhua Town, Haining City, Jiaxing, Zhejiang Applicant before: JINGKE ENERGY TECHNOLOGY (HAINING) Co.,Ltd. Applicant before: JINKO SOLAR HOLDING Co.,Ltd. |