CN101106105A - Making and detection method of silicon base LCD chip base plate - Google Patents
Making and detection method of silicon base LCD chip base plate Download PDFInfo
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- CN101106105A CN101106105A CNA2006100287702A CN200610028770A CN101106105A CN 101106105 A CN101106105 A CN 101106105A CN A2006100287702 A CNA2006100287702 A CN A2006100287702A CN 200610028770 A CN200610028770 A CN 200610028770A CN 101106105 A CN101106105 A CN 101106105A
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Abstract
The invention relates to a method for fabricating a silicon-based liquid crystal display chip baseplate and detecting the wafer grade, including that an auxiliary metal layer is formed first; then, a pixel-auxiliary capacitor is formed; thereafter, the detecting data are obtained and analyzed to detect LCOS baseplate defects out; finally, the auxiliary metal layer is removed. The auxiliary metal layer comprises all pixel-unit baseplates in LCOS baseplate. The method in the invention can be used to detect LCOS baseplate defects, and not to change the structure and the performance of LCOS.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of manufacturing of silicon base LCD chip base plate and detection method.
Background technology
Silicon base liquid crystal display chip (liquid crystal on silicon, LCOS) owing to have that volume is little, aperture opening ratio is high and conventional liquid crystal (liquid crystaldisplay such as light utilization ratio height, LCD) incomparable advantage, and cause the attention of industry gradually.
LCOS is as a kind of reflective array liquid crystal display spare, and by utilizing reverberation, and order drives a plurality of independent displaying unit that is arranged that it comprised and realizes liquid crystal display in a signal scan cycle; Usually, its independent displaying unit is called pixel cell.
Fig. 1 is a LCOS pixel cell structure schematic diagram, as shown in Figure 1, LCOS pixel cell 100 comprises pixel drive unit 111, comprising a holding capacitor (hereinafter to be referred as pixel capacitance) and a transistor (MOSFET is hereinafter to be referred as pixel switch) that plays on-off action.On pixel drive unit 111, be formed with pixel drive electrode 113.Has dielectric layer 112 between pixel drive electrode 113 and the pixel drive unit 111; Utilize be linked in sequence pixel drive unit 111, dielectric layer 112 and pixel drive electrode 113 of through hole 117 to form pixel cell substrates 110.A plurality of pixel cell substrates 110 are arranged and constitute the LCOS substrate; LCOS substrate and conducting glass substrate 130 are fitted, form cavity and in cavity, behind the perfusion liquid crystal 120, form LCOS.
Fig. 2 is that the LCOS substrate detects principle schematic in the prior art.As shown in Figure 2, frame of broken lines partly is the equivalent electric circuit (hereinafter to be referred as pixel cell drive circuit 114) of the LCOS pixel cell substrate 110 shown in Fig. 1 among the figure.Pixel cell drive circuit 114 comprises pixel switch 115, pixel capacitance 116 and pixel drive electrode 113.Pixel switch 115 be metal-oxide semiconductor fieldeffect transistor (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET); It has a source electrode that pole plate is connected with pixel capacitance 116, and the grid of the horizontal scanning line 201 of connection line-scan circuit 200 and the drain electrode of the column scan line 211 that is connected column scan circuit 210.Another pole plate of pixel capacitance 116 connects or ground connection with public electrode.Pixel switch 115 links to each other with pixel drive electrode 113 with pixel capacitance 116 via source electrode.LCOS applies voltage by the grid of line- scan circuit 200 and 201 pairs of pixel switches 115 of horizontal scanning line, makes the pixel switch 115 that is provided with of embarking on journey that is connected in horizontal scanning line 201 all be in conducting state; In the line-scanning period, column scan circuit 210 orders apply voltage signal in column scan line 211, be about to data and write in proper order in the series of pixels cell substrate 110, and then produce the corresponding electromotive force that writes data voltage that equates at pole plate and pixel drive electrode 113 places that pixel capacitance 116 links to each other with pixel switch.In conjunction with shown in Figure 1, at this moment, form electrical potential difference between pixel drive electrode 113 response electromotive forces and the electromotive force that corresponding conducting glass substrate place has, and then the liquid crystal of activation corresponding position.In the cycle thereby each pixel cell of LCOS is write data at one group of horizontal scanning line, drive the respective pixel unit, realize the demonstration of LCOS.
Detection to the LCOS substrate is undertaken by detecting unit, and this detecting unit is connected by column scan line 211 with tested LCOS substrate.This detecting unit comprises sense switch 230, detection electric capacity 240 and the detector 220 that order links to each other.LCOS substrate performance just often, column scan line 211 should have and the electromotive force that writes the corresponding level of data, but when there is defective in the LCOS substrate, when for example having short circuit or decreasing insulating, the potential level of column scan line 211 correspondences that link to each other with fault location LCOS pixel cell substrate 110 will no longer be a standard value, therefore, detect the potential level of column scan lines by detector 220, and with standard electrode potential level ratio default in the detector 220, can carry out defects detection to the LCOS substrate.
Fig. 3 is LCOS pixel cell substrate detection range schematic diagram in the existing method of testing, and as shown in Figure 3, LCOS pixel cell substrate 110 comprises pixel drive unit 111, dielectric layer 112 and the pixel drive electrode 113 that is linked in sequence; Pixel drive unit 111 comprises pixel switch 115, pixel capacitance 116 and intermediate layer of material 140; Pixel switch 115 links to each other with pixel drive electrode 113 via dielectric layer inner via hole 117, links to each other with pixel capacitance 116 by connecting line 118.Because the restriction of process conditions, the row, column scanning circuit is to the horizontal scanning line 201 and the connecting hole 117 incoming pixel driver elements 111 of column scan line 211 need in intermediate layer of material of pixel cell input voltage signal, and link to each other with pixel drive electrode 113 with connecting hole 117 in the dielectric layer by intermediate layer of material 140, and can not directly insert from pixel drive electrode 113, cause utilization to have detection method now and can't detect the defective that comprises pixel drive electrode 113 and part intermediate layer of material 140, dielectric layer 112 and the existence of connecting hole 117 parts wherein.If the partial pixel cell substrate with defective is poured into liquid crystal operation, will cause the increase of production cost.
Publication number discloses a kind of LCOS method of testing substrate in the U.S. Patent application of " 2003/0038651 A1 ", this method adds a pixel drive electrode data and reads transistor (mirror read pass transistor in the structural design of LCOS pixel cell drive circuit, MRPT), make the LCOS substrate detect and to detect the LCOS substrate upper layer of material defective that comprises the pixel drive electrode, but the pixel cell driving circuit structure complexity after the change design, easily cause the increase of the complicated and production cost of technology, and complicated pixel cell drive circuit makes that easily the LCOS volume with identical function is bigger than normal, does not meet the requirement of device miniaturization development trend.Therefore, be badly in need of a kind of detection method that not only can detect the LCOS base board defect but also not change board structure.
Summary of the invention
The invention provides a kind of silicon base LCD chip base plate manufacture method, comprising:
Form the silicon base LCD chip base plate structure, wherein, comprise a plurality of pixel drive unit and upper dielectric layer thereof in the described structure;
Deposit one assistant metal layer on described silicon base LCD chip base plate structure, formation has the silicon base LCD chip base plate detection architecture of a plurality of pixel auxiliary capacitors;
The described assistant metal layer of etching and a plurality of pixel drive unit upper surface dielectric layer expose the pixel drive unit upper surface;
Silicon base LCD chip base plate detection architecture after the etching is tested;
Deposition one protective layer on the silicon base LCD chip base plate detection architecture after the test;
Remove the assistant metal layer;
Remove driver element upper surface dielectric layer, form silicon base LCD chip base plate.
Described assistant metal layer material can select for use integrated circuits such as Al, Cu, Ti to make a kind of in the common metal; Described assistant metal layer thickness is 0.1～1 micron.
The invention provides a kind of silicon base LCD chip base plate detection method, comprising:
By deposit one assistant metal layer, formation has the silicon base LCD chip base plate detection architecture of a plurality of pixel auxiliary capacitors;
Utilize the pixel auxiliary capacitor, obtain to detect data;
Analysis detecting data detects the silicon base LCD chip base plate defective.
Described assistant metal layer covers whole pixel cell substrates in the silicon base LCD chip base plate; Described assistant metal layer material is that integrated circuits such as Al, Cu, Ti are made a kind of in the common metal; Described assistant metal layer thickness is 0.1～1 micron; Described assistant metal layer is removed after finishing detection; Described pixel auxiliary capacitor comprises pixel drive electrode and assistant metal layer; Pixel drive electrode storage positive charge in the described pixel auxiliary capacitor; The described detection data high potential that to be the pixel drive electrode have because of the storage positive charge forms the Changing Pattern of Potential Distributing in described pixel drive unit; The positive charge of described pixel drive electrode storage obtains via applying scanning voltage signal to described pixel drive unit and applying negative high voltage to the assistant metal layer; Described scanning voltage signal is no-voltage or arbitrarily reasonable low voltage value; The crest voltage that capacitance that described negative high voltage value has according to pixel cell to be measured and pixel drive unit built-in potential distribute is calculated; The capacitance that described pixel cell has is the summation of the parasitic capacitance between the parasitic capacitance between each part and the pixel cell relevant with pixel cell to be measured in the pixel capacitance, pixel cell in the pixel cell.
Compared with prior art, the present invention has the following advantages:
1. realize to keep the integrated circuit electrical testing of LCOS chip original structure and performance first, comprise the electrical testing of peripheral control circuit and cell array.
2. by introducing the detection range that the assistant metal layer forms test supplementary structure retrofit testing, can before finishing, the LCOS manufacturing detect the LCOS base board defect that comprises upper layer of material defectives such as pixel drive electrode, and then the partial pixel cell substrate with defective no longer poured into liquid crystal operation, because the cost of perfusion liquid crystal accounts for nearly 1/3rd of whole LCOS production costs, therefore, using the inventive method will reduce production costs widely.
3. remove to forming the assistant metal plate that the test supplementary structure is introduced in the LCOS substrate manufacture process later stage, can finally form the LCOS that has identical LCOS board structure with existing product, do not influence size of devices and performance.
Description of drawings
Fig. 1 is a LCOS pixel cell structure schematic diagram;
Fig. 2 is that the LCOS substrate detects principle schematic in the prior art;
Fig. 3 is a LCOS pixel cell substrate detection range schematic diagram in the prior art;
Fig. 4 A～Fig. 4 F is the LCOS substrate manufacturing process schematic diagram of the explanation embodiment of the invention;
Fig. 5 is the LCOS substrate detection architecture schematic diagram of the explanation embodiment of the invention;
Fig. 6 is the sequential chart one of explanation embodiment of the invention testing process;
Fig. 7 is the sequential chart two of explanation embodiment of the invention testing process.
Parts same among the figure are represented with same label.Wherein:
100: pixel cell; 110: the pixel cell substrate;
111: pixel drive unit; 112: dielectric layer;
113: the pixel drive electrode; 114: the pixel cell drive circuit;
115: pixel switch; 116: pixel capacitance;
117: through hole; 118: connecting line;
120: liquid crystal layer; 130: conducting glass substrate;
140: intermediate layer of material; 200: line-scan circuit;
201: horizontal scanning line; 202: line scan signals;
210: the column scan circuit; 211: the column scan line;
212: column scan signal; 220: detector;
230: sense switch; 231: the sense switch control signal;
240: detect electric capacity; 300: the assistant metal plate;
310: the assistant metal plate control signal; 400: protective layer;
500: the driver element upper surface layer; 600: public electrode;
The 700:LCOS substrate.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Fig. 4 A-4F is the LCOS substrate manufacturing process schematic diagram of the explanation embodiment of the invention, be of the improvement of outstanding the inventive method with respect to existing method, omit keep in the inventive method with existing LCOS manufacture of substrates in identical part, only the inventive method is done to illustrate with respect to the difference part of existing method.Obviously, this measure does not influence the integrality of explanation the inventive method.As shown in the figure, the LCOS substrate manufacturing process of application the inventive method is:
At first, shown in Fig. 4 A, form the LCOS board structure.
Utilize existing technology to form the LCOS driver element; and at the surperficial 500 formation dielectric layers 112 of LCOS driver element; and then on dielectric layer, deposit LCOS drive electrode layer 113, after this drive electrode layer of etching, deposit a dielectric layer thereon as the protective layer that carries out subsequent technique.Described LCOS driver element comprises a plurality of pixel drive unit 111, and described LCOS drive electrode comprises a plurality of pixel drive electrodes 113.
The material of described LCOS board structure and manufacture method are determined according to product requirement, process conditions and current technology flow process.
Then, shown in Fig. 4 B, deposit one assistant metal layer 300 on described LCOS board structure, form LCOS substrate detection architecture, through structure thus, can detect the LCOS base board defect that comprises upper layer of material defectives such as pixel drive electrode, and auxiliaryly determine LCOS substrate failure mode.
Fig. 5 is the LCOS substrate detection architecture schematic diagram of the explanation embodiment of the invention, and as shown in Figure 5, described LCOS substrate detection architecture comprises LCOS substrate 700, dielectric layer 112 and is deposited on assistant metal layer 300 on the dielectric layer; Comprise a plurality of pixel cell drive circuits 114 in the described LCOS substrate 700; Described pixel cell drive circuit 114 is shown in dotted line zone in Fig. 5; Shown in solid line enclosing region among Fig. 4 and Fig. 5, described LCOS substrate 700 comprises a plurality of pixel cell substrates 110 with pixel cell drive circuit 114; Described pixel cell drive circuit 114 comprises pixel switch 115, pixel capacitance 116 and pixel drive electrode 113.Pixel switch 115 be metal-oxide semiconductor fieldeffect transistor (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET); It has a source electrode that pole plate is connected with pixel capacitance 116, and the grid of the horizontal scanning line 201 of connection line-scan circuit 200 and the drain electrode of the column scan line 211 that is connected column scan circuit 210.Another pole plate of pixel capacitance 116 connects or ground connection with public electrode 600.Pixel switch 115 links to each other with pixel drive electrode 113 with pixel capacitance 116 via source electrode.Described assistant metal layer 300 is contained whole pixel drive electrodes 113 in the LCOS substrate; Described pixel drive electrode 113, dielectric layer 112 and assistant metal layer 300 constitute the pixel auxiliary capacitor with storage organization; The deposition process of described assistant metal layer 300 is determined according to process conditions and product requirement.As embodiments of the present invention, described assistant metal layer material can select for use integrated circuits such as Al, Cu, Ti to make a kind of in the common metal; Described assistant metal layer thickness is 0.1～1 micron.
Detection to the LCOS substrate is undertaken by detecting unit, and this detecting unit is connected by column scan line 211 with tested LCOS substrate.Described sense switch 230 links to each other with detector 220 by detecting electric capacity 240.Described sense switch 230 is MOSFET, and it has grid that links to each other with the additional logic control circuit and the drain electrode that links to each other with column scan line 211.
When adopting the inventive method that the LCOS substrate is detected, utilize line-scan circuit 200 and column scan circuit 210 and apply the voltage scanning signal to the LCOS substrate, described line-scan circuit 200, column scan circuit 210 and all can be formed on the LCOS substrate by its horizontal scanning line of drawing respectively 201 and column scan line 211 by horizontal scanning line 201 and column scan line 211.
Again, shown in Fig. 4 C, the described assistant metal layer of etching and a plurality of pixel drive unit upper surface dielectric layer 112, driver element upper surface 500 is exposed at graph area internal seams place.
Described driver element upper surface 500 can be in order to connection-core sheet pin.Described driver element comprises a plurality of pixel drive unit.
Then, the LCOS substrate detection architecture of described pixel auxiliary capacitor of etching and dielectric layer 112 back formation is tested.
Fig. 6 is for the sequential chart one of explanation embodiment of the invention testing process, and as Fig. 5 and shown in Figure 6, the concrete steps that application the inventive method is tested are:
Step 441: provide sweep signal to LCOS, drive each pixel cell, and required necessary condition is tested in formation.
Line-scan circuit 200 is by output voltage signal sequential scanning horizontal scanning line 201 in each line-scanning period.During scanning, voltage signal puts on the grid of the one-row pixels switch 115 that is connected with described horizontal scanning line 201, connects pixel switch 115.When scanning next line scan line 201, cut off above-mentioned pixel switch 115, and connect the pixel switch 115 that is connected in next line scan line 201, the horizontal scanning line 201 of scanning residue in a similar manner.
In the cycle of scanning a horizontal scanning line as mentioned above, column scan circuit 210 is listed as last row from first and drives column scan line 211 in proper order.Described driving refers to export the correspondent voltage signal from column scan circuit 210 to column scan line 211.
As embodiments of the invention, existing hypothesis is at scan line scan line 201G
iCycle in drive column scan line 211D
jShown in a ' section among Fig. 6, before the test, to connecting horizontal scanning line 201G
iDescribed pixel switch 115 grid, connect the described sense switch 230 of additional logic control circuit grid, connect column scan line 211D
jThe drain electrode and the described assistant metal layer 300 of described pixel switch 115 all apply zero voltage signal or ground connection; Subsequently, shown in b ' section among Fig. 6, the horizontal scanning line 201G of line-scan circuit 200 by drawing by it
iGrid to described pixel switch 115 applies certain voltage signal 202, makes to be connected in horizontal scanning line 200G
iPixel switch 115 connect; The column scan line 211D of column scan circuit 210 by drawing by it
jDrain electrode to described pixel switch 115 applies zero voltage signal 212, and at this moment, the pole plate and the column scan line 211 that are connected with pixel switch 115 in pixel drive electrode 115, the pixel capacitance 116 have the same potential level, and no charge storage in the pixel capacitance 116.
Simultaneously, apply the assistant metal plate control signal 310 with negative value to assistant metal layer 300, described assistant metal layer 300 promptly forms the pixel auxiliary capacitor that pixel drive electrode place stores positive charge with pixel drive electrode 113; At this moment, the grid that connects the described sense switch 230 of additional logic control circuit still can keep no-voltage, and described sense switch 230 can be in closed condition.
The negative high voltage value that applies to described assistant metal layer 300 is determined according to the sensitivity of process conditions, product relevant parameter and detector etc.
Can find out by step 441, put on the quantity of electric charge that obtain and the column scan circuit 210 of magnitude of voltage on the assistant metal layer 300 and pixel drive electrode 113 puts on the potential difference values decision pixel auxiliary capacitor stored between the zero voltage signal value on the column scan line 211.So, via the capacitance that obtains pixel cell to be measured in the actual product parameter and by can be detected the crest voltage of pixel drive unit built-in potential distribution, can extrapolate the minimum voltage value that puts on the assistant metal layer 300; The capacitance of described pixel cell is the summation of the parasitic capacitance between the parasitic capacitance between each part and the pixel cell relevant with pixel cell to be measured in the pixel capacitance 116 in each pixel cell, the pixel cell in the LCOS substrate to be measured.
The magnitude of voltage that column scan circuit 210 puts on the column scan line 211 is taken as zero, the existence that can reduce pixel capacitance 116 detects the interference that causes to the LCOS substrate of using the inventive method and carrying out, as embodiments of the invention, described magnitude of voltage is not limited to zero, can be arbitrarily low voltage value rationally.
Step 442: obtain to detect data, promptly obtain described Potential Distributing Changing Pattern.
After described assistant metal layer 300 forms the pixel auxiliary capacitor of pixel drive electrode place storage positive charge with pixel drive electrode 113, shown in c ' section among Fig. 6, need earlier that the column scan line 211 of described connection column scan circuit 210 is unsettled, and guarantee that described sense switch 230 is in opening state, can apply zero voltage signal to assistant metal layer 300, to accumulate positive charge at pixel drive electrode place; After this, shown in d ' section among Fig. 6, apply zero voltage signal to assistant metal layer 300, pixel drive electrode 113 places have the high potential of the positive charge generation of accumulation, and form Potential Distributing at described pixel drive electrode 113, pixel capacitance 116 and 211 on column scan line.Described Potential Distributing Changing Pattern is obtained by detector 220 via sense switch 230 and detection electric capacity 240.Subsequently, shown in e ' section among Fig. 6, repeat above-mentioned steps, carry out the detection of other pixel cell in the LCOS substrate.
Fig. 7 is the sequential chart two of explanation embodiment of the invention testing process.Really, can adopt sequential chart two explanations as shown in Figure 7 to use the concrete steps that the inventive method is tested.
Shown in a section among Fig. 7, before the test, to connecting horizontal scanning line 201G
iDescribed pixel switch 115 grid, connect the described sense switch 230 of additional logic control circuit grid, connect column scan line 211D
jThe drain electrode and the described assistant metal layer 300 of described pixel switch 115 all apply zero voltage signal or ground connection; Subsequently, shown in b section among Fig. 7, the horizontal scanning line 201G of line-scan circuit 200 by drawing by it
iGrid to described pixel switch 115 applies certain voltage signal 202, makes to be connected in horizontal scanning line 200G
iPixel switch 115 connect; The column scan line 211D of column scan circuit 210 by drawing by it
jDrain electrode to described pixel switch 115 applies zero voltage signal 212, simultaneously, apply the assistant metal plate control signal 310 with negative value to assistant metal layer 300, described assistant metal layer 300 promptly forms the pixel auxiliary capacitor that pixel drive electrode place stores positive charge with pixel drive electrode 113; At this moment, apply certain sense switch control signal 231 by the additional logic control circuit to the grid of described sense switch 230, described sense switch 230 is in opening state.
Shown in c section among Fig. 7, the column scan line 211 of described connection column scan circuit 210 is unsettled, and guarantee that described sense switch 230 is in opening state; After this, shown in d section among Fig. 7, apply zero voltage signal to assistant metal layer 300, pixel drive electrode 113 places have the high potential of the positive charge generation of accumulation, and form Potential Distributing at described pixel drive electrode 113, pixel capacitance 116 and 211 on column scan line.Described Potential Distributing Changing Pattern is obtained by detector 220 via sense switch 230 and detection electric capacity 240.Subsequently, shown in e section among Fig. 7, repeat above-mentioned steps, carry out the detection of other pixel cell in the LCOS substrate.
Then, shown in Fig. 4 D, after test, deposition one protective layer 400 on the LCOS board structure after the etching in order to protection driver element upper surface 500, is not damaged it in the process that removes assistant metal layer 300.
The selection of described protective layer 400 materials is determined according to assistant metal layer 300 material and driver element upper surface 500 materials and corresponding technological requirement.
Then, shown in Fig. 4 E, remove assistant metal layer 300.
At last, shown in Fig. 4 F, remove drive electrode surface dielectric layer 112, detected the LCOS substrate of defective, continue subsequent technique production.
Use the inventive method,, and then, will reduce production costs widely, improved production efficiency simultaneously the operation that the partial pixel cell substrate with defective no longer pours into liquid crystal by the detection range of formation pixel auxiliary capacitor retrofit testing; By removing in the LCOS substrate manufacture process later stage to forming the assistant metal plate that the test supplementary structure is introduced, can finally form the LCOS that has identical LCOS board structure with existing product, do not influence size of devices and performance.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (15)
1. a silicon base LCD chip base plate manufacture method is characterized in that, comprising:
Form the silicon base LCD chip base plate structure, wherein, comprise a plurality of pixel drive unit and upper dielectric layer thereof in the described structure;
Deposit one assistant metal layer on described silicon base LCD chip base plate structure, formation has the silicon base LCD chip base plate detection architecture of a plurality of pixel auxiliary capacitors;
The described assistant metal layer of etching and a plurality of pixel drive unit upper surface dielectric layer expose the pixel drive unit upper surface;
Silicon base LCD chip base plate detection architecture after the etching is tested;
Deposition one protective layer on the silicon base LCD chip base plate detection architecture after the test;
Remove the assistant metal layer;
Remove driver element upper surface dielectric layer, form silicon base LCD chip base plate.
2. manufacture method according to claim 1 is characterized in that: described assistant metal layer material can select for use integrated circuits such as Al, Cu, Ti to make a kind of in the common metal.
3. manufacture method according to claim 2 is characterized in that: described assistant metal layer thickness is 0.1～1 micron.
4. a silicon base LCD chip base plate detection method is characterized in that, comprising:
By deposit one assistant metal layer, formation has the silicon base LCD chip base plate detection architecture of a plurality of pixel auxiliary capacitors;
Utilize the pixel auxiliary capacitor, obtain to detect data;
Analysis detecting data detects the silicon base LCD chip base plate defective.
5. detection method according to claim 4 is characterized in that: described assistant metal layer covers whole pixel cell substrates in the silicon base LCD chip base plate.
6. detection method according to claim 5 is characterized in that: described assistant metal layer material is that integrated circuits such as Al, Cu, Ti are made a kind of in the common metal.
7. detection method according to claim 6 is characterized in that: described assistant metal layer thickness is 0.1～1 micron.
8. detection method according to claim 7 is characterized in that: described assistant metal layer is removed after finishing detection.
9. detection method according to claim 4 is characterized in that: described pixel auxiliary capacitor comprises pixel drive electrode and assistant metal layer.
10. detection method according to claim 9 is characterized in that: pixel drive electrode storage positive charge in the described pixel auxiliary capacitor.
11. according to claim 4 or 10 described detection methods, it is characterized in that: the described detection data high potential that to be the pixel drive electrode have because of the storage positive charge forms the Changing Pattern of Potential Distributing in described pixel drive unit.
12. detection method according to claim 10 is characterized in that: the positive charge of described pixel drive electrode storage obtains via applying scanning voltage signal to described pixel drive unit and applying negative high voltage to the assistant metal layer.
13. detection method according to claim 12 is characterized in that: described scanning voltage signal is no-voltage or arbitrarily reasonable low voltage value.
14. detection method according to claim 12 is characterized in that: the crest voltage that capacitance that described negative high voltage value has according to pixel cell to be measured and pixel drive unit built-in potential distribute is calculated.
15. detection method according to claim 14 is characterized in that: the capacitance that described pixel cell has is the summation of the parasitic capacitance between the parasitic capacitance between each part and the pixel cell relevant with pixel cell to be measured in the pixel capacitance, pixel cell in the pixel cell.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106707140A (en) * | 2017-01-04 | 2017-05-24 | 上海东软载波微电子有限公司 | Test system and method for testing LCD driver chip |
| CN106933414A (en) * | 2017-02-28 | 2017-07-07 | 厦门天马微电子有限公司 | A kind of contact panel, touch-screen and its driving method |
| CN109765707A (en) * | 2019-04-10 | 2019-05-17 | 南京芯视元电子有限公司 | A kind of test chip for silicon-based spatial optical modulator |
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2006
- 2006-07-10 CN CNB2006100287702A patent/CN100483682C/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106707140A (en) * | 2017-01-04 | 2017-05-24 | 上海东软载波微电子有限公司 | Test system and method for testing LCD driver chip |
| CN106707140B (en) * | 2017-01-04 | 2019-10-22 | 上海东软载波微电子有限公司 | The test macro and method of LCD driving chip |
| CN106933414A (en) * | 2017-02-28 | 2017-07-07 | 厦门天马微电子有限公司 | A kind of contact panel, touch-screen and its driving method |
| CN109765707A (en) * | 2019-04-10 | 2019-05-17 | 南京芯视元电子有限公司 | A kind of test chip for silicon-based spatial optical modulator |
| CN109765707B (en) * | 2019-04-10 | 2019-06-28 | 南京芯视元电子有限公司 | A kind of test chip for silicon-based spatial optical modulator |
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