CN109765707B - A kind of test chip for silicon-based spatial optical modulator - Google Patents
A kind of test chip for silicon-based spatial optical modulator Download PDFInfo
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Abstract
The present invention puts forward a kind of test chip for silicon-based spatial optical modulator, belongs to micro-display field.The primary structure of the test chip includes silicon substrate layer, liquid crystal coordination sphere, liquid crystal layer and ito glass layer, wherein the pixel electrode layer in silicon base can be divided into several test zone in effective display area domain, different pattern of pixels and test section are designed in every kind of test zone, these test sections can be controlled by development board and light display for testing, by monitoring corresponding parameter if any fringing field effect, diffraction efficiency, liquid crystal equivalent capacity and parasitic capacitance, voltage retention, direct current residual voltage, and scintillation caused by them etc., according to test result, it is made reference for optimizing product design and technological design.
Description
Technical field
The present invention relates to a kind of micro-display fields, more particularly, to a kind of test core of novel silicon base spatial light modulator
Piece.
Background technique
Liquid crystal on silicon (Liquid Crystal on Silicon, LCoS) has small in size, high resolution and and transmission-type
The advantages that liquid crystalline phase is higher than light utilization efficiency, LCoS chip has been widely used in augmented reality (Augmented at present
Reality, AR), virtual reality (Virtual reality, VR), vehicle-mounted new line show (Head Up Display, HUD),
In the emerging product such as optical communication and micro projection (Pico-Projector).As these emerging products gradually come into ours
In life, LCoS micro display chip designs and prepares technology and receives the research of more and more staff.
Silicon-based spatial optical modulator is complementary metal oxide semiconductor techniques (Complementary Metal Oxide
Semiconductor, CMOS) and LCD technology (Liquid-crystal display technology) combine
Display, main preparation process are to make driving panel on silicon wafer using manufacture of semiconductor, form CMOS substrate, then
Liquid crystal display is made in substrate；In CMOS substrate, the pixel circuit of each display is partly led by several metal oxides
Body field effect transistor (metallic oxide semiconductor field effect transistor, MOSFET)
It is formed with several capacitors.
In the design of LCoS chip, many designs and parameter will affect postchannel process and optical diffraction effect, such as parasitic electricity
Hold the influence of Resistance versus voltage conservation rate (Voltage Holding Ratio, VHR), shadow of the fringing field effect to diffracting effect
It rings.
LCD space light modulator is to realize light modulation by changing the phase of incident light, according to the original of scitillation optical grating
Reason, the tune that LCD space light modulator loads different position phasors to simulate balzed grating, to incident light can be used in we
System, concrete operations are exactly that the periodic voltage for applying size to liquid crystal forms it into periodic phase grating.Spatial light modulator
Biggest advantage is to change in real time the parameters such as period, the blaze angle of grating, so change emergent light blazed wavelength,
Glittering level, realizes flexibly controllable purpose.
Since liquid crystal device adjusts voltage and phase by many discrete pixels, when this results in adjusting the phase of light
Phase cannot be made to generate continuous variation, step-like phase change can only be generated by multiple steps changed step by step, no
The Phase Continuation distribution of disconnected approach balzed grating,.Each period of liquid crystal grating is divided into the m steps changed step by step, is generated more
Rank phase outline grating, such light wave will generate 2 π/m phase difference by adjacent step, realize and are similar to binary ladder
Phase-modulation of the grating to incident light.
In LCoS chip in use, one can be generated in pixel edge if the corresponding voltage of adjacent pixel is different
The electric field of low potential pixel is directed toward as shown in Figure 1, the fixed value that the voltage deviation in pixel is arranged, draws from high potential pixel
Enter noise and signal cross-talk, reduces diffraction efficiency.In addition, due to the influence of FFE, so that the pixel distribution in pixel broadens,
Especially in phase from 2pi to 0 grating switching part, originally should precipitous phase change tend to the variation continuously mitigated,
It is same to influence diffraction efficiency.
Under the influence of not considering fringing field effect, the diffraction efficiency of first order of diffraction of an ideal balzed grating,
Are as follows:
Wherein, q is the number of steps for including in each screen periods.But since there are fringing field effects between adjacent electrode
It answers, the balzed grating, phase outline that LCoS is formed is not preferably that the director orientation of liquid crystal in space consecutive variations and produces
Raw backhaul region (flyback zone), as shown in Figure 2.In LCoS in the presence of edge effect, addition one can be passed through
A correction factor estimates an expression formula diffraction efficiency approximate formula are as follows:
It is the width in phase backhaul region,It is the width of a screen periods.Due to the presence of fringing field effect, core
The diffraction efficiency of piece can reduce.
The main measurement method of voltage retention is to measure the open-circuit voltage drop and input voltage value at liquid crystal device both ends
Ratio, voltage retention are an important parameters of liquid crystal device, can reflect the quality of liquid crystal.Voltage retention is smaller,
Indicate that existing ion concentration is bigger in liquid crystal device；Voltage retention is big, indicates that ion concentration is smaller in liquid crystal device.And it is residual
Shadow phenomenon is indistinctly to see the ghost of a upper picture when image switching in long-time display fixed image.
Voltage retention is low to be primarily due to inside liquid crystal material that there are excessive ionic charges, makes script resistance value very high
And close to the liquid crystal material of insulation state, voltage can not be maintained to the peak value of applied voltage input, until next input electricity
Before pressure is come.
If the voltage retention of pixel is lower, the scarce capacity of be able to maintain charge is to maintain next driving voltage
When coming, then contrast can reduce, in some instances it may even be possible to which there is a phenomenon where brightness irregularities and image flicker, the formula of voltage retention
Are as follows:
Its initial voltage value Vo be apply voltage and RC be pixel time constant.Voltage retention is mixed depending on liquid crystal
Close the chemical structure in object and polarity, distribution type layer, the production of liquid crystal cell and other factors (water content, medium, glass etc.).Cause
This, if liquid crystal conservation rate relatively has referential in the case where there is the production experiment condition of identical production and liquid crystal cell.Cause
This, voltage retention must be regarded as a system parameter (liquid crystal cell and liquid crystal), and cannot be intended only as independent liquid crystal
Parameter.
There is the process for charging and showing to liquid crystal in actual liquid crystal display, in circuit, wherein in liquid crystal display
Cheng Zhong, liquid crystal cell two sides reappear the state that open circuit electric discharge is presented, therefore liquid crystal cell can be regarded to one kind as using liquid crystal material as dielectric
Matter, and the capacitor with small leakage current, equivalent model is capacitor C and resistance R is in parallel, and RC parallel circuit can be equivalent to
The generation mode of leakage current.The discharge process of one non-ideal capacitor are as follows:
In test circuit, in order to avoid ionic medium is accumulated on two sides inside the liquid crystal cell, ion shielding is in turn resulted in
Effect generally will use the form of ac square wave, and make that liquid crystal receives is square-wave signal, liquid crystal molecule inside control liquid crystal cell
Steering, measure the calculation formula of voltage retention are as follows:
Wherein Vi indicates the initial voltage magnitude for being applied to liquid crystal cell two sides, and Vt is then indicated before the next reverse of polarity,
The voltage value that liquid crystal cell moment is possessed.
Direct current residual voltage is to apply DC bias signal when driving liquid crystal by liquid crystal display, at this time direct current signal
The ionic medium inside liquid crystal cell can be made by the driving of electric field, caused by being finally adsorbed in both alignment layers.When outside does not exist
When to voltage signal, adion, which is formed by internal electric field and will will cause ion, to be occurred to move again in liquid crystal cell,
And generate direct current residual voltage.There are three types of the measurement methods of direct current residual voltage, is the mensuration that capacitance versus voltage is detained respectively,
Light penetration flashes null method and DIELECTRIC ABSORPTION method etc..
And use it is more for DIELECTRIC ABSORPTION method, when measuring direct current residual voltage characteristic using DIELECTRIC ABSORPTION method, firstly, needing
A prolonged stable DC voltage is first provided to be applied on liquid crystal cell, it is inclined to direct current when simulating liquid crystal display operation
Signal is pressed, then turning off voltage instantaneous keeps liquid crystal cell two sides short-circuit, and purpose is allowing two electrode equipotential of liquid crystal cell, and finally open circuit makes
Ion inside liquid crystal cell is in equilibrium electric field, will release a prolonged direct current residual voltage at this time.
Above-mentioned technical background is the principle of present liquid crystal cell parameter testing mostly, at present can be directly using test equipment
Quickly and easily test the parameters of liquid crystal cell or liquid crystal chip.
Above-mentioned parameter also can be direct or indirect influence display flashing or ghost phenomena.
Summary of the invention
The object of the present invention is to provide a kind of novel test chips for silicon-based spatial optical modulator, which can
To be divided into several test zone in effective display area domain, different test patterns is designed in every kind of test zone, it is online to supervise
Design and processes parameter is controlled, timely and effectively provides reference data to improve LCoS design.
The technical solution adopted by the present invention:
A kind of test chip for silicon-based spatial optical modulator, which is characterized in that including stack gradually silicon substrate layer,
First liquid crystal coordination sphere, liquid crystal layer, the second liquid crystal coordination sphere and ito glass layer, wherein by the pixel electrode layer in silicon substrate layer
It is divided into several test zone in effective display area domain, every kind of test zone includes at least one test cell, every kind of test
Region has different test pattern or test circuit.
Further, each test cell in one of test zone has several different line widths and/or arrangement
Pattern of pixels.
Further, the pattern of pixels forms grating.
Further, at least one following parameter or parameters relationship: liquid crystal are tested or calculated by the pattern of pixels
The fringing field effect of grating, diffraction efficiency, phase step reversal zone, noise, diffraction efficiency and raster size and spacing relationship.
Further, the test cell in one of test zone is the pixel metal layer for setting area.
Further, at least one following parameter: liquid crystal equivalent capacity, parasitic electricity is tested out by the test cell
Appearance, voltage retention, direct current residual voltage, noise.
Further, pass through the box thickness uniformity of different chip areas, image after test cell test chip irrigation crystal
Contrast and noise, or by different liquid crystal injection technologies after test cell test chip irrigation crystal to liquid crystal box effect
It influences.
Further, the test cell in this kind of test zone is separately positioned on liquid crystal injecting port, chip center and chip
Four corners.
Further, the test cell in one of test zone is actual chips circuit and test circuit.
Further, each test cell concurrently or separately applies driving electricity in every kind of test zone or every kind of test zone
Pressure test.
Particularly, test chip can design the grating of several different line widths and arrangement, and grating can be pixelation,
It is also possible to the long strip type of class grating, can tests or calculate fringing field effect, the diffraction of liquid crystal grating by optical grating construction
The relationship of efficiency size and phase step reversal zone (flyback zone) and diffraction efficiency and raster size and spacing.
Particularly, test zone can design sufficiently large pixel metallic region, which can test out liquid crystal
Equivalent capacity and parasitic capacitance, the parameters such as voltage retention, residual DC voltage and noise.Such as when VHR is lower, it can check
Whether liquid crystal material is contaminated.Residual DC voltage can be as the selection and monitoring of processing procedure and alignment materials.By this side
Method does not just have to test processing procedure using real chip, and the interference that can be debugged to avoid processing procedure caused by other circuit power factors is a kind of
Inexpensive and reliable monitoring method, and can reflect the relevant parameter of every a collection of product in time.
Particularly, the box thickness uniformity and irrigation crystal technique can be monitored with the method for N number of test zone is selected on chip
Process, it may be convenient to for material selection test and technique climbing verifying.
Particularly, the box thickness uniformity, picture contrast and the noise and liquid of different chip areas after chip irrigation crystal are tested
Influence of the brilliant injection technology to liquid crystal box effect, such as four angles of the liquid crystal injecting port in chip, chip center and chip
Fall place or 21 points of ANSI etc..
Particularly, the pixel electrode layer on silicon base bottom can be divided into several test zone in effective display area domain,
Different pattern of pixels and test section are designed in every kind of test zone, the shape and test zone number of test zone are variable.
Particularly, each individually test zone can be lighted simultaneously or be controlled by development board independent in test zone
It lights, several test zones light test together and all test zones all light test together.
Particularly, the influence test result of voltage retention can unite as liquid crystal design index and the specification of production phase
Initial data in process control figure is counted, qualitative and quantitative can be carried out according to statistical process control formula after collecting great mass of data, is produced
Or (out of control, OOC) out of control in material evaluation, exceeded (out of spec, the OOS) upper and lower bound of inspection result,
Even if it is final to play quality control and feedback on line.Available stable production attributional analysis figure and improvement direction.
Particularly, the box thickness uniformitys of different chip areas, picture contrast can be monitored after testing chip irrigation crystal and made an uproar
The influence of sound and liquid crystal injection technology to liquid crystal box effect.
Particularly, it tests in chip, monitors the test zone of influence of the liquid crystal injection technology to liquid crystal box, need to design
In the liquid crystal injecting port of chip and four corners of chip.
Particularly, test zone can designed for detection aftercurrent (Residual of Direct current,
RDC the test result of) value, aftercurrent can be used as the evaluation criteria of alignment materials, also can be in the volume production stage as quality control
The index of system, such as afterimage of image phenomenon.
Advantageous effects of the invention:
It, can be before the formal flow of chip, by by effective display area domain the present invention is directed to design a kind of test chip
It is divided into several test zone, different test patterns is designed in every kind of test zone, corresponding parameter such as voltage is monitored and protects
It holdup and diffracting effect and as a result, obtains timely and effectively to be to improve with optimizing product design and the reference of technological design
LCoS design provides reference data.
Detailed description of the invention
Fig. 1 is fringing field effect and its influence to voltage in pixel in technical background；
Fig. 2 is that fringing field effect and flyback zone influence schematic diagram in technical background；
Fig. 3 is the schematic top plan view of one structure of the embodiment of the present invention；
Fig. 4 is a kind of its pixel design drawing of the test section A1 of the embodiment of the present invention；
Fig. 5 is the test section A1 of the embodiment of the present invention secondly kind pixel design drawing；
Fig. 6 is its three kinds of pixel design drawings of the test section A1 of the embodiment of the present invention；
Specific embodiment
The technical solution protected below in conjunction with attached drawing to the present invention illustrates.
As shown in figure 3, the present invention puts forward a kind of novel test chip for silicon-based spatial optical modulator, the test core
The primary structure of piece includes: silicon substrate layer 1, ito glass 2, liquid crystal sealant 3 and effective display area domain 4.Wherein silicon substrate layer 1
On pixel electrode layer be characterized in that several test zone can be divided into effective display area domain 4, in every kind of test zone
Different pattern of pixels and test section are designed, such as A test zone 5, B test zone 6, C test zone 7 in figure, test zone
Shape and test zone number are variable, according to test result, make reference for optimizing product design and technological design.
In a kind of novel test chip of the embodiment, A test zone 5 is used to test the diffraction efficiency of scitillation optical grating, into
And it is influenced to analyze fringing field effect, phase step reversal zone, noise and diffraction efficiency etc..A test zone can be different lines
Wide and arrangement grating, if Fig. 4 is its first pixel design drawing 51 of the test section A1 of the embodiment of the present invention；Fig. 5 is that the present invention is real
Applying its second of pixel design drawing 52 of the test section A1, a kind of its pixel design drawing is compared with the test section A1, and grating space is the same
But the width of grating increases；The present embodiment uses its third pixel design drawing 53 of the test section A1 shown in fig. 6, optical grating construction
A kind of its pixel design drawing is compared with the test section A1, and raster size is constant, but grating space becomes larger.A kind test zone includes
The total n test section A1, A2 ... An, liquid crystal grating size and shape can be different in each test zone.
In the test section Fig. 4 A1 of the embodiment of the present invention in a kind of its pixel design drawing, optical grating construction number is 256, and grating is wide
Degree can be 4.5um, 6um, 8um and other sizes, and raster width is set as 8um in the present embodiment, can configure difference after irrigation crystal
The echelon of order.
A kind of its pixel design drawing pixel application voltage of the test section A1 of the embodiment of the present invention and equivalent grating model are every 8
One optical grating construction of optical grating constitution, i.e. each period of liquid crystal grating are divided into 8 steps changed step by step, generate multistage phase wheel
Wide grating, such light wave will generate the phase differences of 2 π/8 by adjacent step, realize and are similar to binary echelon to entering
Penetrate the phase-modulation of light.For its profile at triangular shaped, grating constant is d=8um, liquid in the equivalent grating model of liquid crystal of Fig. 5
It is brilliant with a thickness of b=3um, the o light and e optical index of liquid crystal are respectively ne and no, and optical axis is parallel to the surface of grating, periodicity
For N=256/8, there are 8 phase steps in a cycle.
It brings diffraction efficiency calculation formula into, as calculated the calculation formula in background technique, corresponding diffraction can be calculated
Efficiency。
A kind test zone includes the total n test section A1, A2 ... An, liquid crystal grating size and shape in each test zone
Can be different, the liquid crystal cell thickness certain numerical value of entire chip is b, therefore the fringing field effect that generates of each test zone is not yet
Equally.In n test zone, the ratio t=dn/b, dn of grating and liquid crystal cell thickness are that the grating in n-th of test zone is normal
Number.
The fringing field effect generated when the raster size in each region is different is not also identical, passes through n test of test
The diffraction efficiency numerical values recited in area can deduce different pixels electrode/influence of the thickness of liquid crystal numerical value to diffraction efficiency, in turn
Calculate influence of the fringing field effect to diffraction efficiency.
Can be monitored simultaneously according to the result of diffraction actual test diffraction efficiency under different situations, fringing field effect,
Phase step reversal zone and noise etc. provide reference for real product design.
Above-described embodiment is part of the invention, and raster size of the invention and shape are variable.
B test zone is mainly used for test voltage conservation rate parameter and direct current residual voltage, B test zone include B1,
B2 ... Bn, total n test section, each test section are the sufficiently large pixel metals of an area, solve that pixel is too small to connect
The problem of testing out.Voltage retention parameter and the main process of direct current residual voltage test are on silicon base chip pin 11
Test pin is drawn, using voltage retention and direct current residual voltage measuring instrument, the voltage that can test out B test zone is protected
Holdup and direct current residual voltage numerical value.Voltage retention used in the present embodiment and direct current residual voltage measuring instrument are TOYO
MODEL 6250, voltage retention and direct current residual voltage can be tested in one test section of B test zone simultaneously, can also be
The test of the test zone difference test section B, the present invention is tested in the same test zone.
B test zone can be with the parasitic storage capacitance and liquid crystal capacitance and the two of monitoring process and liquid crystal to spatial light
The influence of the voltage retention of modulator chip, the box that different chip areas in addition can be monitored after testing chip irrigation crystal are thick
The influence of evenness, picture contrast and noise and liquid crystal injection technology to liquid crystal box effect.To monitor liquid crystal injection technology
Influence to liquid crystal box, in four corners of liquid crystal injecting port and chip, it is necessary to design the area B.
The influence test result of voltage retention can count processing procedure as liquid crystal design index and the specification of production phase
Initial data in control chart can come qualitative and quantitative, production or material after collecting great mass of data according to statistical process control formula
(out of control, OOC) out of control in assessment, exceeded (out of spec, the OOS) upper and lower bound of inspection result carry out line
It upper quality control and timely feedbacks.Available stable production attributional analysis figure and improvement direction.
C test zone is designed as the circuit and test circuit of actual chips, such as pixel circuit, capacitor.It is after lighting
Test the display effect of the last actual circuit of chip and the display effect of test circuit.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (10)
1. a kind of test chip for silicon-based spatial optical modulator, including stack gradually silicon substrate layer, the coordination of the first liquid crystal
Layer, liquid crystal layer, the second liquid crystal coordination sphere and ito glass layer, which is characterized in that wherein, by the pixel electrode layer in silicon substrate layer
It is divided into several test zone in effective display area domain, every kind of test zone includes at least one test cell, every kind of test
Region has different test pattern or test circuit.
2. a kind of test chip for silicon-based spatial optical modulator according to claim 1, which is characterized in that wherein one
Each test cell in kind test zone has the pattern of pixels of several different line widths and/or arrangement.
3. a kind of test chip for silicon-based spatial optical modulator according to claim 2, which is characterized in that the picture
Sketch map case forms grating.
4. a kind of test chip for silicon-based spatial optical modulator according to claim 2, which is characterized in that pass through institute
It states pattern of pixels test or calculates at least one following parameter or parameters relationship: the fringing field effect of liquid crystal grating, diffraction effect
Rate, phase step reversal zone, diffraction efficiency and raster size and spacing relationship.
5. a kind of test chip for silicon-based spatial optical modulator according to claim 1, which is characterized in that wherein one
Test cell in kind test zone contains the pixel metal layer of setting area.
6. a kind of test chip for silicon-based spatial optical modulator according to claim 5, which is characterized in that pass through institute
It states test cell and tests out at least one following parameter: the remaining electricity of liquid crystal equivalent capacity, parasitic capacitance, voltage retention, direct current
Pressure, noise.
7. a kind of test chip for silicon-based spatial optical modulator according to claim 5, which is characterized in that pass through institute
The box thickness uniformity, picture contrast and noise that test cell tests different chip areas after chip irrigation crystal are stated, or by described
Influence of the different liquid crystal injection technologies to liquid crystal box effect after test cell test chip irrigation crystal.
8. a kind of test chip for silicon-based spatial optical modulator according to claim 5, which is characterized in that this kind is surveyed
Test cell in examination region is separately positioned on four corners of the liquid crystal injecting port of chip, chip center and chip.
9. a kind of test chip for silicon-based spatial optical modulator according to claim 1, which is characterized in that wherein one
Test cell in kind test zone is actual chips circuit and test circuit.
10. a kind of test chip for silicon-based spatial optical modulator according to claim 1, which is characterized in that every kind
Each test cell concurrently or separately applies driving voltage test in test zone or every kind of test zone.
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| CN1862322A (en) * | 2005-05-11 | 2006-11-15 | 上海华园微电子技术有限公司 | Measuring circuit of LCOS display chip |
| CN101106105A (en) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | Making and detection method of silicon base LCD chip base plate |
| CN106154595A (en) * | 2015-04-08 | 2016-11-23 | 杜寰 | A kind of LCoS micro display drives panel preparation technology |
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| CN107688248A (en) * | 2016-08-05 | 2018-02-13 | 豪威科技股份有限公司 | liquid crystal on silicon test platform |
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|---|---|---|---|---|
| KR100577696B1 (en) * | 2003-12-15 | 2006-05-10 | 삼성전자주식회사 | Liquid crystal on silicon having uniform cell gap |
| CN103197455B (en) * | 2013-03-19 | 2014-01-01 | 清华大学 | Method for increasing responding speed of phase only liquid crystal on silicon device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1862322A (en) * | 2005-05-11 | 2006-11-15 | 上海华园微电子技术有限公司 | Measuring circuit of LCOS display chip |
| CN101106105A (en) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | Making and detection method of silicon base LCD chip base plate |
| CN106154595A (en) * | 2015-04-08 | 2016-11-23 | 杜寰 | A kind of LCoS micro display drives panel preparation technology |
| CN106873269A (en) * | 2015-11-13 | 2017-06-20 | 豪威科技股份有限公司 | Liquid crystal display and silicon substrate infrared imaging sensor |
| CN107688248A (en) * | 2016-08-05 | 2018-02-13 | 豪威科技股份有限公司 | liquid crystal on silicon test platform |
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