CN101102039A - Mos型过温保护电路 - Google Patents
Mos型过温保护电路 Download PDFInfo
- Publication number
- CN101102039A CN101102039A CNA2007100214443A CN200710021444A CN101102039A CN 101102039 A CN101102039 A CN 101102039A CN A2007100214443 A CNA2007100214443 A CN A2007100214443A CN 200710021444 A CN200710021444 A CN 200710021444A CN 101102039 A CN101102039 A CN 101102039A
- Authority
- CN
- China
- Prior art keywords
- circuit
- temperature
- mos type
- window
- thermal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005070 sampling Methods 0.000 abstract description 11
- 230000001012 protector Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100214443A CN100502191C (zh) | 2007-04-12 | 2007-04-12 | Mos型过温保护电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100214443A CN100502191C (zh) | 2007-04-12 | 2007-04-12 | Mos型过温保护电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101102039A true CN101102039A (zh) | 2008-01-09 |
CN100502191C CN100502191C (zh) | 2009-06-17 |
Family
ID=39036197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100214443A Active CN100502191C (zh) | 2007-04-12 | 2007-04-12 | Mos型过温保护电路 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100502191C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102193604A (zh) * | 2010-03-16 | 2011-09-21 | 鸿富锦精密工业(深圳)有限公司 | Cpu散热电路 |
CN102207409A (zh) * | 2010-03-30 | 2011-10-05 | 深圳艾科创新微电子有限公司 | 一种温度检测电路 |
CN103199846A (zh) * | 2013-03-26 | 2013-07-10 | 浙江工业大学 | Cmos迟滞过温保护电路 |
CN103383580A (zh) * | 2012-05-03 | 2013-11-06 | 三星半导体(中国)研究开发有限公司 | 自适应低压差线性稳压器 |
CN112362180A (zh) * | 2020-10-15 | 2021-02-12 | 国网思极紫光(青岛)微电子科技有限公司 | 用于过温保护的温差检测电路 |
CN117650483A (zh) * | 2024-01-30 | 2024-03-05 | 苏州锴威特半导体股份有限公司 | 一种高边开关的过温检测电路和开关电源 |
-
2007
- 2007-04-12 CN CNB2007100214443A patent/CN100502191C/zh active Active
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102193604A (zh) * | 2010-03-16 | 2011-09-21 | 鸿富锦精密工业(深圳)有限公司 | Cpu散热电路 |
CN102193604B (zh) * | 2010-03-16 | 2014-03-26 | 鸿富锦精密工业(深圳)有限公司 | Cpu散热电路 |
CN102207409A (zh) * | 2010-03-30 | 2011-10-05 | 深圳艾科创新微电子有限公司 | 一种温度检测电路 |
CN102207409B (zh) * | 2010-03-30 | 2016-01-06 | 北斗国科(北京)科技有限公司 | 一种温度检测电路 |
CN103383580A (zh) * | 2012-05-03 | 2013-11-06 | 三星半导体(中国)研究开发有限公司 | 自适应低压差线性稳压器 |
CN103383580B (zh) * | 2012-05-03 | 2015-07-15 | 三星半导体(中国)研究开发有限公司 | 自适应低压差线性稳压器 |
CN103199846A (zh) * | 2013-03-26 | 2013-07-10 | 浙江工业大学 | Cmos迟滞过温保护电路 |
CN103199846B (zh) * | 2013-03-26 | 2016-02-24 | 浙江工业大学 | Cmos迟滞过温保护电路 |
CN112362180A (zh) * | 2020-10-15 | 2021-02-12 | 国网思极紫光(青岛)微电子科技有限公司 | 用于过温保护的温差检测电路 |
CN112362180B (zh) * | 2020-10-15 | 2022-08-12 | 国网思极紫光(青岛)微电子科技有限公司 | 用于过温保护的温差检测电路 |
CN117650483A (zh) * | 2024-01-30 | 2024-03-05 | 苏州锴威特半导体股份有限公司 | 一种高边开关的过温检测电路和开关电源 |
CN117650483B (zh) * | 2024-01-30 | 2024-04-16 | 苏州锴威特半导体股份有限公司 | 一种高边开关的过温检测电路和开关电源 |
Also Published As
Publication number | Publication date |
---|---|
CN100502191C (zh) | 2009-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101102039A (zh) | Mos型过温保护电路 | |
CN100478824C (zh) | 输出电压可调式cmos基准电压源 | |
CN109725672A (zh) | 一种带隙基准电路及高阶温度补偿方法 | |
CN102385405B (zh) | 一种通用的带隙基准启动电路 | |
CN103166616B (zh) | 模拟开关电路结构 | |
CN101587753B (zh) | 一种模拟信号采样电路以及一种开关电容电路 | |
TW200522372A (en) | Low voltage cmos bandgap reference | |
CN106230416A (zh) | 一种带有源钳位的无自举栅极驱动电路 | |
CN107465407A (zh) | 一种漏电保护型自举采样开关电路及设备 | |
CN202887673U (zh) | 高精度led屏显恒流驱动电路 | |
CN101499644A (zh) | 一种低启动电流的欠压保护电路 | |
CN101986570B (zh) | 模数转换器及其采样保持电路 | |
CN102055167A (zh) | 一种抗工艺偏差影响的过温保护电路 | |
CN201038745Y (zh) | Mos型过温保护电路 | |
CN102904432B (zh) | 一种同步开关电源转换系统中的驱动控制电路 | |
CN103824855A (zh) | 具有电源反接保护功能的cmos调整集成电路结构 | |
CN104020339B (zh) | 一种可编程电流检测电路 | |
CN208873065U (zh) | 一种带隙基准电路 | |
CN208636739U (zh) | 多比特数字控制的精确电流源电路 | |
CN107479616B (zh) | 一种超低功耗带隙基准电路 | |
CN102393783A (zh) | 具有高阶温度补偿的电流源电路及系统 | |
CN101944903B (zh) | Cmos输入缓冲电路 | |
CN105471421B (zh) | 一种电平转换电路 | |
CN104409100A (zh) | 用于反熔丝的编程烧录电路 | |
CN201001030Y (zh) | 一种限流保护开关 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SUZHOU POWERON IC DESIGN CO., LTD. Free format text: FORMER OWNER: WUXI POWERON MICROELECTRONICS CO., LTD. Effective date: 20110218 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 214028 4/F, TOWER D, INFORMATION INDUSTRIAL PARK, NO. 21, CHANGJIANG ROAD, WUXI NEW DISTRICT, JIANGSU PROVINCE TO: 215123 3F, NO. 399, LINQUAN STREET, DUSHUHU, INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20110218 Address after: 215123 Jiangsu province Suzhou Industrial Park Dushuhu Linquan Street No. 399 3F Patentee after: Suzhou Poweron IC Design Co., Ltd. Address before: 4, building 214028, block D, information industry park, 21 Changjiang Road, Wuxi, Jiangsu Patentee before: Wuxi Poweron Microelectronics Co., Ltd. |
|
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20080109 Assignee: Wuxi Chipown Microelectronics Co., Ltd. Assignor: Suzhou Poweron IC Design Co., Ltd. Contract record no.: 2015320010006 Denomination of invention: MOS type over-temperature protection circuit Granted publication date: 20090617 License type: Exclusive License Record date: 20150123 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
EM01 | Change of recordation of patent licensing contract |
Change date: 20150311 Contract record no.: 2015320010006 License type after: Exclusive license License type before: exclusive license |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model |