CN101093867B - Substrate of vertical column array of nitride in second group - Google Patents
Substrate of vertical column array of nitride in second group Download PDFInfo
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- CN101093867B CN101093867B CN2006100937626A CN200610093762A CN101093867B CN 101093867 B CN101093867 B CN 101093867B CN 2006100937626 A CN2006100937626 A CN 2006100937626A CN 200610093762 A CN200610093762 A CN 200610093762A CN 101093867 B CN101093867 B CN 101093867B
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- vertical column
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Abstract
The substrate of vertical pole array includes substrate, buffer layer, and layer of vertical pole array. The buffer layer is on the substrate. The vertical pole array is on the buffer layer. The vertical pole array is composed of multiple vertical poles stand on the buffer layer.
Description
Technical field
The present invention relates to a kind of three or five family's Semiconductor substrate, relate in particular to a kind of vertical column array of nitride in second group (vertical-rod array) substrate.
Background technology
Light-emitting diode (LED) and laser (LD) are used on the market widely in recent years, for example the blue light and the yellow fluorescent powder combination made from gallium nitride (GaN) can obtain white light, just all do not steep the bright and power saving of light source in brightness or aspect the power consumption, can significantly reduce power consumption than tradition before.In addition, the life-span is longer than conventional bulb about more than tens thousand of hours the life-span of light-emitting diode.
From ruddiness, green glow, blue light is that compound by gallium nitride series is main to the light-emitting diode of ultraviolet light at the main on the market most product of device at present, but because the lattice constant (lattice constant) of alumina substrate (sapphire) itself and gallium nitride, the difference of thermal coefficient of expansion and chemical property, so in foreign substrate (for example is silicon substrate, silicon carbide substrates or alumina substrate) gallium nitride layer of going up growth has many line defects, dislocation, and these dislocations can increase along with the thickness of the gallium nitride layer of growing and extend, and just form threading dislocation.And the laser performance and the useful life of the light-emitting diode of this type of defective effect ultraviolet light and gallium nitride series.
In order to reduce threading dislocation, routine develops and multiple substrat structure.Fig. 1 illustrates the diagrammatic sectional view into a kind of III-nitride substrate of routine.Please refer to Fig. 1, one deck GaN resilient coating 102 is arranged on the substrate 100, and a plurality of resistance barrier of configuration pattern 104 on the GaN resilient coating 102, by grown semiconductor layer 106 on the GaN resilient coating that is exposed between the resistance barrier pattern 104, GaN epitaxial loayer just, and coating resistance barrier pattern 104.This kind substrat structure is to utilize resistance barrier pattern to block partly dislocation, so that the part GaN epitaxial loayer that is positioned on the resistance barrier pattern can not produce threading dislocation.Yet the Grown GaN epitaxial loayer still has serious regional dislocation phenomenon like this, just has the comparatively intensive dislocation of distribution at resistance barrier pattern 104 locational GaN epitaxial loayers not and produces.
Fig. 2 illustrates the diagrammatic sectional view into the another kind of III-nitride substrate of routine.Please refer to Fig. 2, on substrate 200, form resilient coating 202 and crystal seed layer 204, in substrate 200, form the groove 206 that penetrates resilient coating 202 and crystal seed layer 204 afterwards, just resilient coating 202 and crystal seed layer 204 are patterned to list structure.Utilize the selectivity lateral growth method of heterostructure, be referred to as PE (Pendeo-epitaxy), make only unsettled lateral growth on the sidewall of bar shaped crystal seed layer 204 of GaN epitaxial loayer, cover then on the crystal seed layer 204 of strip, in order to stop the partly threading dislocation of vertical direction.Similar to the described substrat structure of Fig. 1 institute Grown GaN epitaxial loayer, above-mentioned unsettled Grown GaN epitaxial loayer has the problem of regional threading dislocation equally, and just the threading dislocation phenomenon is intensive produces in some zone.And be not to be the GaN epitaxial loayer that grows the dislocation-free phenomenon.
Because the problem of threading dislocation is all arranged in the III-nitride epitaxial loayer that uses above-mentioned two substrat structures to grow, and therefore the thickness of the III-nitride epitaxial loayer of being grown is subject to the dislocation phenomenon, all less than 20 microns.
Summary of the invention
The object of the present invention is to provide a kind of vertical column array of nitride in second group substrate, a dislocation homogeneous semiconductor layer growth environment can be provided.
A further object of the present invention provides a kind of vertical column array of nitride in second group substrate, and a structure point of weakness can be provided, and helps semiconductor layer and substrate to be separated from each other.
The present invention proposes a kind of vertical column array of nitride in second group substrate, and this vertical column array of nitride in second group substrate comprises: substrate, resilient coating, vertical column array layer and continuity III-nitride layer.Wherein, resilient coating is positioned at the substrate top, and the vertical column array layer is positioned on the resilient coating, and the vertical column array layer is made up of a plurality of vertical columns that directly stand on the resilient coating respectively, and the surface of exposing this resilient coating between the vertical column, this vertical column vertical-growth are in the surface of this substrate, and the diameter of section of each those vertical column is 60～150 nanometers, the thickness of this vertical column array layer is 10 nanometers～5 micron, and the distribution density of those vertical columns is 10 in this vertical column array layer
9/ cm
2～10
12/ cm
2Between, this continuity III-nitride is positioned on this vertical column array layer layer by layer.
Vertical column array of nitride in second group substrate according to one embodiment of the invention is described, and wherein the material of each vertical column comprises III-nitride, for example gallium nitride.
Vertical column array of nitride in second group substrate according to one embodiment of the invention is described, and wherein resilient coating is a composite bed.And the material of composite bed comprises silicon nitride/III-nitride.The thickness of this resilient coating is about 1～60 nanometer again.
Vertical column array of nitride in second group substrate according to one embodiment of the invention is described, and wherein the material of resilient coating comprises silicon nitride.And the thickness of resilient coating is approximately less than 10 nanometers.
The present invention proposes a kind of vertical column array of nitride in second group substrate in addition.This vertical column array of nitride in second group substrate comprises: substrate, silicon nitride resilient coating, vertical column array layer and gallium nitride semiconductor layers.Wherein, the vertical column array layer is positioned on the substrate, and the vertical column array layer is made up of a plurality of monocrystalline vertical columns that directly stand on respectively on this silicon nitride resilient coating, and exposes the surface of this silicon nitride resilient coating between the monocrystalline vertical column.This vertical column vertical-growth is in the surface of this substrate, and the diameter of section of each those vertical column is 60～150 nanometers, and the thickness of this vertical column array layer is 10 nanometers～5 micron, and the distribution density of those vertical columns is 10 in this vertical column array layer
9/ cm
2～10
12/ cm
2Between.Gallium nitride semiconductor layers is the continuity layer again, is positioned on the vertical column array layer.
The thickness of silicon nitride resilient coating is approximately less than 10 nanometers.In addition, also comprise time resilient coating between silicon nitride resilient coating and the vertical column array layer.This time the thickness of resilient coating is about 1～50 nanometer, and the material of inferior resilient coating comprises III-nitride.
Vertical column array of nitride in second group substrate according to one embodiment of the invention is described, and wherein the material of each vertical column comprises III-nitride, for example gallium nitride.
In the present invention, arrange by the crystal grain that the surface of resilient coating provides, but the therefore vertical column of growth of vertical substrate surface on resilient coating, and and each vertical column has high monocrystalline, and dislocation-free phenomenon wherein.And after when on the vertical column array layer, forming semiconductor layer, because the surface of vertical column array layer provides the epitaxial environment of dislocation-free phenomenon, therefore the semiconductor layer that extension forms on the vertical column array layer has extremely low dislocation density, and the thickness of formed semiconductor layer is bigger.In addition, as structural point of weakness, semiconductor layer can be peeled off via vertical prismatic layer and substrate easily mutually by vertical prismatic layer.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 illustrates the diagrammatic sectional view into a kind of III-nitride substrate of routine.
Fig. 2 illustrates the diagrammatic sectional view into the another kind of III-nitride substrate of routine.
Fig. 3 A illustrates and is the diagrammatic sectional view of vertical column array of nitride in second group substrate according to an embodiment of the invention.
Fig. 3 B illustrates and is the diagrammatic sectional view of vertical column array of nitride in second group substrate according to another embodiment of the present invention.
Fig. 4 illustrates the diagrammatic sectional view into a vertical column in the vertical column array of nitride in second group substrate according to an embodiment of the invention.
The simple symbol explanation
100,200,300: substrate
102,202,302: resilient coating
104: resistance barrier pattern
204: crystal seed layer
206: groove
106,208,308: semiconductor layer
302a: host buffer layer
304: inferior resilient coating
306: the vertical column array layer
306a: vertical column
Embodiment
Fig. 3 A illustrates and is the diagrammatic sectional view of vertical column array of nitride in second group substrate according to an embodiment of the invention.
Please refer to Fig. 3 A, vertical column array of nitride in second group substrate of the present invention comprises substrate 300, resilient coating 302, vertical column array layer 306 and semiconductor layer 308.Wherein the material of substrate 300 for example is silicon, carborundum or aluminium oxide.Resilient coating 302 then is positioned on the substrate 300, and the material of resilient coating 302 comprises nitride, for example is silicon nitride or three races's silicon nitride, for example indium silicon nitride.The thickness of resilient coating 302 is approximately less than 10 nanometers.
In addition, resilient coating 302 also can have lamination layer structure, and just resilient coating 302 can also be with host buffer layer 302a and the lamination layer structure (shown in Fig. 3 B) that is positioned at inferior resilient coating 304 compositions on the host buffer layer 302a.Please refer to Fig. 3 B, the material of host buffer layer 302a comprises nitride, for example is silicon nitride or three races's silicon nitride, for example indium silicon nitride.And the material of inferior resilient coating 304 comprises III-nitride.Wherein group iii elements comprises aluminium, gallium, indium, thallium.Preferably, the material of above-mentioned resilient coating 304 is an indium nitride.And resilient coating 302a and time resilient coating 304 can be combined into the resilient coating of lamination layer structure.When just the vertical column array of nitride in second group substrate of the another embodiment of the present invention that illustrated of Fig. 3 B had the resilient coating 302 of lamination layer structure, the resilient coating 302 that this has lamination layer structure of the present invention can be silicon nitride/III-nitride composite bed.In addition, the thickness of the resilient coating 302a among above-mentioned Fig. 3 B is approximately less than 10 nanometers, and the thickness of above-mentioned resilient coating 304 is about 1～50 nanometer.In other words, shown in Fig. 3 B, when resilient coating had the lamination layer structure of host buffer layer 302a and time resilient coating 304, the thickness of resilient coating 302 (resilient coating of lamination layer structure) was about 1～60 nanometer.
Moreover 306 of above-mentioned vertical column array layers are positioned at above-mentioned resilient coating 302 tops, and vertical column array layer 306 is made up of a plurality of vertical column 306a that stand on substrate 300 tops.The material of each vertical column for example is an III-nitride.And preferably, the material of vertical column for example is a gallium nitride.Again, the thickness of vertical column array layer 306 is about 10 nanometers～5 micron.It should be noted that the distribution density of vertical column 306a above substrate 300 is about 10 in the vertical column array layer 306
9/ cm
2～10
12/ cm
2Between.
In addition, please refer to Fig. 4, Fig. 4 illustrates the diagrammatic sectional view into a vertical column in the vertical column array of nitride in second group substrate according to an embodiment of the invention, and the diameter of section d of wherein single vertical column 306a is about 60～150 nanometers.It should be noted that each vertical column 306a has high monocrystalline, and dislocation-free (dislocation) phenomenon produces.
Moreover vertical column array of nitride in second group substrate of the present invention also comprises semiconductor layer 308, and the thickness of this semiconductor layer 308 is approximately greater than 20 microns.The material of semiconductor layer 308 comprises III-nitride, preferably gallium nitride.This semiconductor layer 308 that is to say epitaxial loayer, can be used as the substrate of follow-up formation III-nitride device.
Arrange by the crystal grain that resilient coating or the surface of lamination layer structure resilient coating provide, therefore can on resilient coating, form the vertical column on vertical substrates surface one by one, and each vertical column has high monocrystalline, and dislocation-free phenomenon wherein.And after when on the vertical column array layer, forming semiconductor layer because the surface of vertical column array layer provides the epitaxial environment of dislocation-free phenomenon, therefore the semiconductor layer that extension forms on the vertical column array layer has the dislocation that is evenly distributed.
In addition, because vertical column array of nitride in second group substrate of the present invention, the structure that between substrate and semiconductor layer, has the vertical column array layer, so the vertical column array layer can be used as that stress disengages a little between the heterogeneous lattice, so the thickness of formed semiconductor layer is bigger on vertical prismatic layer.In addition, as structural point of weakness, semiconductor layer can be peeled off via vertical prismatic layer and substrate easily mutually by vertical prismatic layer.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (15)
1. vertical column array of nitride in second group substrate comprises:
Substrate;
Resilient coating is positioned at this substrate top;
The vertical column array layer, be positioned on this resilient coating, wherein this vertical column array layer is made up of a plurality of vertical columns that directly stand on this resilient coating respectively, and the surface of exposing this resilient coating between the vertical column, this vertical column vertical-growth is in the surface of this substrate, the diameter of section of each those vertical column is 60～150 nanometers, and the thickness of this vertical column array layer is 10 nanometers～5 micron, and the distribution density of those vertical columns is 10 in this vertical column array layer
9/ cm
2～10
12/ cm
2Between; And
Continuity III-nitride layer is positioned on this vertical column array layer.
2. vertical column array of nitride in second group substrate as claimed in claim 1, wherein the material of each those vertical column comprises III-nitride.
3. vertical column array of nitride in second group substrate as claimed in claim 1, wherein the material of each those vertical column comprises gallium nitride.
4. vertical column array of nitride in second group substrate as claimed in claim 1, wherein this resilient coating is a composite bed.
5. vertical column array of nitride in second group substrate as claimed in claim 4, wherein the material of this composite bed comprises silicon nitride/III-nitride.
6. vertical column array of nitride in second group substrate as claimed in claim 4, wherein the thickness of this resilient coating is 1～60 nanometer.
7. vertical column array of nitride in second group substrate as claimed in claim 1, wherein the material of this resilient coating comprises silicon nitride.
8. vertical column array of nitride in second group substrate as claimed in claim 7, wherein the thickness of this resilient coating is less than 10 nanometers.
9. vertical column array of nitride in second group substrate comprises:
Substrate;
The silicon nitride resilient coating is positioned at this substrate top;
The vertical column array layer, be positioned on this silicon nitride resilient coating, wherein this vertical column array layer is made up of a plurality of monocrystalline vertical columns that directly stand on respectively on this silicon nitride resilient coating, and the surface of exposing this silicon nitride resilient coating between the monocrystalline vertical column, this vertical column vertical-growth is in the surface of this substrate, the diameter of section of each those vertical column is 60～150 nanometers, and the thickness of this vertical column array layer is 10 nanometers～5 micron, and the distribution density of those vertical columns is 10 in this vertical column array layer
9/ cm
2～10
12/ cm
2Between; And
Gallium nitride semiconductor layers is the continuity layer, is positioned on this vertical column array layer.
10. vertical column array of nitride in second group substrate as claimed in claim 9, wherein the thickness of this silicon nitride resilient coating is less than 10 nanometers.
11. vertical column array of nitride in second group substrate as claimed in claim 9 wherein also comprises time resilient coating between this silicon nitride resilient coating and this vertical column array layer.
12. vertical column array of nitride in second group substrate as claimed in claim 11, wherein the thickness of this time resilient coating is 1～50 nanometer.
13. vertical column array of nitride in second group substrate as claimed in claim 11, wherein the material of this time resilient coating comprises III-nitride.
14. vertical column array of nitride in second group substrate as claimed in claim 9, wherein the material of each those vertical column comprises III-nitride.
15. vertical column array of nitride in second group substrate as claimed in claim 9, wherein the material of each those vertical column comprises gallium nitride.
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| CN102610717A (en) * | 2011-01-20 | 2012-07-25 | 鸿富锦精密工业（深圳）有限公司 | Semiconductor lighting chip and manufacturing method thereof |
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| KR101510377B1 (en) * | 2008-01-21 | 2015-04-06 | 엘지이노텍 주식회사 | Method for manufacturing nitride semiconductor and light emitting device having vertical structure |
| SG10202101832YA (en) | 2016-09-05 | 2021-04-29 | Agency Science Tech & Res | A method of forming nano-patterns on a substrate |
| CN111697115A (en) * | 2019-03-15 | 2020-09-22 | 中国科学院半导体研究所 | Nitride thin film structure based on amorphous substrate and preparation method thereof |
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| CN102610717A (en) * | 2011-01-20 | 2012-07-25 | 鸿富锦精密工业（深圳）有限公司 | Semiconductor lighting chip and manufacturing method thereof |
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