CN101093364A - Stripping liquid for photo-induced resist and base plate processing method using the same - Google Patents
Stripping liquid for photo-induced resist and base plate processing method using the same Download PDFInfo
- Publication number
- CN101093364A CN101093364A CNA2007101125362A CN200710112536A CN101093364A CN 101093364 A CN101093364 A CN 101093364A CN A2007101125362 A CNA2007101125362 A CN A2007101125362A CN 200710112536 A CN200710112536 A CN 200710112536A CN 101093364 A CN101093364 A CN 101093364A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- quality
- stripper
- substrate
- alcohol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Liquid Crystal (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a stripping solution for corrosion inhibitor, which will not corrode the substrate and effectively remove the photoresist film. The substrate forms the metal layer containing silver and other metals. The photoresist stripping solution contains (A) NN-diethyl hydroxylamine of 0.5 mass% to 20 mass%, (B) alkanol amine of 10 mass% to 90 mass%, (C) water-soluble organic solvent of 10 mass% to 90 mass%.
Description
Technical field
The present invention relates to the photoresist stripper.Be particularly related to and be applicable to that semiconductor elements such as making IC or LSI or the photoresist liquid crystal panel element, that fissility is good are with stripper and the substrate processing method using same that uses this antistripping liquid.
Background technology
The manufacturing of semiconductor element such as IC or LSI or liquid crystal panel element is following to be carried out: at first form dielectric films such as conductive metal film that the CVD evaporation obtains or SiO2 film on substrates such as silicon wafer, glass.Then, painting photoresist equably on above-mentioned conductive metal film or dielectric film, optionally to its expose, development treatment, form the photoresist pattern.Next, with this pattern as mask optionally above-mentioned conductive metal film of etching or dielectric film, form microcircuit after, remove photoresist layer not with stripper.At present, consider to use various organic class strippers to remove the above-mentioned photoresist layer of not wanting (referring to patent documentation 1) from security, fissility viewpoint.
On the other hand, the material of the conductive metal film that obtains as above-mentioned CVD evaporation can use chromium (Cr) tantalum (Ta) aluminium (Al) alloy etc.But, in recent years, in the liquid crystal panel field, being accompanied by the height big pictureization that becomes more meticulous, the distribution that the resistance of conductive metal film causes postpones to become problem.So, studying with the lower material silver (Ag) of resistance or containing the material of the silver of trace copper (Cu) as the conductive metal film.
[patent documentation 1] spy opens flat 6-266119 communique
Summary of the invention
But the stripper existence of using has at present formed the metal level that contains silver is stripped from corrosion as the substrate of conductive metal film problem at least.Wish to develop and to realize simultaneously effectively preventing that aforesaid substrate is corroded peels off both photoresist strippers with photoresist.
The present invention studies in view of above-mentioned problem just and to obtain, purpose is to provide a kind of photoresist stripper, described photoresist does not corrode substrate and can remove photoresist film effectively with stripper, and described substrate has formed at least and contained silver-colored metal level as the conductive metal film.
The inventor etc. are conceived to photoresist and have carried out deep research with the use level of ingredient in the stripper in order to solve above-mentioned problem.Found that containing each composition with the use level of stipulating can solve above-mentioned problem, thereby finished the present invention.More specifically, the invention provides following proposal.
The invention provides a kind of photoresist stripper, described photoresist contains (A) N below the 20 quality % more than the 0.5 quality % with stripper, N-diethyl hydramine, following (B) alkanolamine of the above 90 quality % of 10 quality % and following (C) water-miscible organic solvent of the above 90 quality % of 10 quality %.
In addition, the invention provides a kind of above-mentioned photoresist stripper that is used to peel off the photoresist film on the substrate that has formed the metal level that contains silver.
The invention provides a kind of disposal route of substrate, described method comprises following operation: form photoresist film on the substrate that has formed the metal level that contains silver, to this photoresist film expose, development treatment, this substrate of etching and processing is cleaned residue and the etch residue of removing above-mentioned photoresist film with above-mentioned photoresist again with stripper then.
According to photoresist stripper of the present invention, particularly can not corrode formed at least contain silver metal level as the substrate of conductive metal film, do not corrode the substrate that has formed the metal level that contains other metals and remove photoresist film effectively yet.
Embodiment
Photoresist of the present invention contains following (A) N of the above 20 quality % of 0.5 quality % with stripper (below be also referred to as " stripper "), N-diethyl hydramine, following (B) alkanolamine of the above 90 quality % of 10 quality % and following (C) water-miscible organic solvent of the above 90 quality % of 10 quality %.Below, each composition is described.
＜(A) N, N-diethyl hydramine 〉
Stripper of the present invention contains N, N-diethyl hydramine (below be also referred to as " composition (A) ").N, N-diethyl hydramine shows reductibility, the metal level that contains silver that can suppress to be formed on the substrate is corroded.The use level of composition (A) is below the above 20 quality % of 0.5 quality % of stripper.And, preferably lower limit being set at more than the 1 quality %, higher limit is set at below the 10 quality %.Be set in the above-mentioned scope by use level, can obtain good the Corrosion Protection of metal level and the stripping performance of photoresist layer with composition (A).
Need to prove that with respect to constituting metal level by silver, the metal level that contains trace copper is corroded easily, be adjusted in the above-mentioned scope, also can suppress the above-mentioned metal level that contains trace copper effectively and be corroded by addition with composition (A).
In addition, use other that extensively adopt in the stripper to peel off composition when for example hydramine (HA) replaces composition of the present invention (A), exist problem such as to be difficult to handle, might blast because this HA boiling point is low.Tetramethylammonium hydroxide (TMAH) is big to the destruction of the metal level that contains silver or copper, can not prevent corrosion, so can't obtain effect of the present invention.
＜(B) alkanolamine 〉
As alkanolamine (below be also referred to as " composition (B) "), for example can enumerate monoethanolamine, the N-methylethanolamine, the N-ehtylethanolamine, N-propyl group monoethanolamine, the N-butylethanolamine, diethanolamine, monoisopropanolamine, N-methyl isopropyl hydramine, N-ethyl isopropanolamine, N-propyl group isopropanolamine, 2-aminopropane-1-alcohol, N-methyl-2-aminopropane-1-alcohol, N-ethyl-2-amino-propane-1-alcohol, 1-aminopropane-3-alcohol, N-methyl isophthalic acid-aminopropane-3-alcohol, N-ethyl-1-aminopropane-3-alcohol, 1-butylamine-2-alcohol, N-methyl isophthalic acid-butylamine-2-alcohol, N-ethyl-1-butylamine-2-alcohol, 2-butylamine-1-alcohol, N-methyl-2-butylamine-1-alcohol, N-ethyl-2-butylamine-1-alcohol, 3-butylamine-1-alcohol, N-methyl-3-butylamine-1-alcohol, N-ethyl-3-butylamine-1-alcohol, 1-butylamine-4-alcohol, N-methyl isophthalic acid-butylamine-4-alcohol, N-ethyl-1-butylamine-4-alcohol, 1-amino-2-methyl propane-2-alcohol, 2-amino-2-methyl propane-1-alcohol, 1-aminopentane-4-alcohol, 2-amino-4-methylpentane-1-alcohol, 2-aminohexane-1-alcohol, the amino heptane of 3--4-alcohol, 1-amino-octane-2-alcohol, 5-amino-octane-4-alcohol, 1-aminopropane-2, the 3-glycol, 2-aminopropane-1, the 3-glycol, three (oxygen ylmethyl) aminomethane, 1,2-diaminopropanes-3-alcohol, 1,3-diaminopropanes-2-alcohol, 2-(2-amino ethoxy) ethanol etc.Wherein, preferred use is selected from least a kind in monoisopropanolamine, monoethanolamine, N-methylethanolamine, 2-(2-amino ethoxy) ethanol, particularly monoethanolamine, the most preferably uses.Composition (B) can use a kind or make up more than 2 kinds and use.
The use level of composition (B) is below the above 90 quality % of 10 quality % of stripper.And preferred lower limit surpasses 30%, more preferably is more than the 50 quality %.In addition, the preferred upper limit value is below 80%.Be set in the above-mentioned scope by use level, can obtain the stripping performance of good photoresist layer composition (B).
＜(C) water-miscible organic solvent 〉
As water-miscible organic solvent (below be also referred to as " composition (C) "), so long as with glassware for drinking water Combination is arranged, the organic solvent of other gradation compositions dissolvings is got final product, be not particularly limited, can use arbitrarily.As above-mentioned water-miscible organic solvent, can enumerate sulfoxide classes such as dimethyl sulfoxide (DMSO); Sulfone classes such as dimethyl sulfone, diethyl sulfone, two (2-hydroxyethyl) sulfone, tetramethylene sulfone; N, dinethylformamide, N-NMF, N,N-dimethylacetamide, N-methylacetamide, N, amide-types such as N-diethyl acetamide; Lactams such as N-N-methyl-2-2-pyrrolidone N-, N-ethyl-2-pyrrolidone, N-propyl group-2-Pyrrolidone, N-methylol-2-Pyrrolidone, N-hydroxyethyl-2-Pyrrolidone; 1,3-dimethyl-2-imidazolone, 1,3-diethyl-2-imidazolone, 1,3-diisopropyl-imidazolone types such as 2-imidazolone; Polyalcohols and derivants thereof such as diglycol monotertiary alkyl ethers such as ethylene glycol, glycol monomethyl methyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monomethyl ether acetate, diglycol, diglycol monotertiary methyl ether, carbiphene, diglycol monotertiary propyl ether, diglycol monotertiary butyl ether (alkyl is that carbon number is 1～6 low alkyl group), propylene glycol.Wherein, consider, be preferably selected from least a kind in diglycol monotertiary butyl ether, N-N-methyl-2-2-pyrrolidone N-, the dimethyl sulfoxide (DMSO) from improving photoresist fissility aspect.Composition (C) can use a kind or make up more than 2 kinds and use.
The use level of composition (C) accounts for below the above 90 quality % of 10 quality % of stripper.And, preferably lower limit being made as more than the 20 quality %, higher limit is made as below the 40 quality %.Be set in the above-mentioned scope by use level, can obtain the stripping performance of good photoresist layer composition (C).
In addition, stripper of the present invention can be brought into play desirable effect by contain mentioned component (A)～(C) with above-mentioned use level, particularly passes through N, the reductibility that N-diethyl hydramine has can prevent the corrosion of the various metal levels that are corroded because of oxidation.And, make photoresist of the present invention with stripper distillation regeneration, when utilizing again, be preferably 3 kinds of compositions of above-mentioned (A)～(C), but can further cooperate antiseptic according to the desired stripper that obtains.As this antiseptic, the such 3 kinds of antiseptics of antiseptic that can be categorized as antiseptic, have the antiseptic of adsorbability, have reductibility and adsorbability simultaneously with reductibility.
As above-mentioned antiseptic, can enumerate glycitols, C such as aromatic hydroxy compounds such as pyrocatechol, tert-butyl catechol, 1,2,3,-thrihydroxy-benzene, gallic acid, xylitol, D-sorbite, butyl glucoside with reductibility
n(H
2O)
mThe saccharide compounds such as glucose of expression.
And, as above-mentioned antiseptic with adsorbability, can enumerate benzotriazole, 5,6-dimethylbiphenyl triazole, I-hydroxybenzotriazole, the 1-methylbenzotrazole, the amino benzotriazole of 1-, 1-phenyl benzotriazole, 1-methylol benzotriazole, 1-benzotriazole methyl formate, 5-benzotriazole formic acid, 1-methoxyl-benzotriazole, 1-(2, the 2-dihydroxy ethyl)-benzotriazole, 1-(2, the 3-dihydroxypropyl) benzotriazole or conduct " IRGAMET " series are planted 2 of chemical company sale by the vapour Bart, 2 '-{ [(4-methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino group } di-methylcarbinol, 2,2 '-{ [(5-methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino group } di-methylcarbinol, 2,2 '-{ [(4-methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino group } bis ethane or 2, triazole class compounds such as 2 '-{ [(4-methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino group } bis propane.
As the antiseptic that has reductibility and surface adsorption simultaneously, can enumerate the compound that 1-thioglycerol, 2 mercapto ethanol etc. contain sulfydryl.
In the foregoing preservatives, preferably contain the antiseptic of compound, wherein, consider, be preferably selected from aromatic hydroxy compound and contain in the compound of sulfydryl at least a kind from the high viewpoint of Corrosion Protection with hydroxyl or sulfydryl.By selecting the high antiseptic of above-mentioned Corrosion Protection, micro-interpolation can obtain desirable Corrosion Protection, so can reclaim stripper of the present invention, makes its distillation regeneration.
Stripper of the present invention can be used to comprise the photoresist that can develop with alkaline aqueous solution of minus and positive light anti-etching agent.As above-mentioned photoresist, can enumerate the positive light anti-etching agent that (i) contains diazo naphthoquinone compound and novolac resin, (ii) contain and be exposed and acidic compound, the compound that is decomposed by acid and the dissolubility of alkaline aqueous solution is increased and the positive light anti-etching agent of alkali soluble resin, (iii) contain and be exposed and acidic compound, have the group that is decomposed by acid and the dissolubility of alkaline aqueous solution is increased alkali soluble resin positive light anti-etching agent and (iv) contain the photic compound that produces acid, the negative type photoresist of crosslinking chemical and alkali soluble resin etc., but be not limited thereto.
Stripper of the present invention is used for following peeling off: form the photoresist pattern that obtains according to photoetching process, with it as mask selective etch conductive metal film (particularly contain silver metal level) or dielectric film, after forming microcircuit, peel off the residue thing that photoresist pattern and etching produce.
The formation of photoresist layer, exposure, development and etch processes are method commonly used, are not particularly limited.In addition, etching can be adopted any in wet etching, the dry etching.
Use the lift-off processing of stripper of the present invention to adopt infusion process, spray process to be implemented usually.Splitting time is not particularly limited so long as the time that can fully peel off gets final product, and preferably carries out lift-off processing with the short period.
Need to prove, carry out lift-off processing after, the rinsing processing and the dried of the use pure water that can implement usually or lower alcohol etc.
[embodiment]
Below, embodiments of the invention are described, but following embodiment just is used to illustrate example of the present invention, the present invention is not carried out any qualification.
(embodiment 1～10, comparative example 1～5)
[fissility of photoresist film]
On wafer, TFT is formed pattern with photoresist TFR-H (chemical industry (strain) system is answered in Tokyo), implement back roasting 90 seconds down at 150 ℃.Then, on wafer, carry out dry etching or wet etching with resist pattern, this wafer is immersed in the photoresist shown in the following table 1 with in the stripper (50 ℃), measures the time till the photoresist layer dissolves fully, estimate according to following metewand.The result is as shown in table 1.
(evaluation)
Zero: dissolution velocity is faster or identical with it than existing stripper.
△: than existing stripper spended time.
*: than the existing stripper cost plenty of time.
[to the anticorrosive property of Ag]
With formed thickness be 200nm the Ag layer wafer under 50 ℃ at the photoresist shown in the following table 1 with dip treating in the stripper 30 minutes, measure the electrical sheet resistance value.Obtain the etch quantity of Ag by this measurement result, according to the anticorrosive property of following metewand evaluation to Ag.The result is as shown in table 1.Need to prove that the mensuration of electrical sheet resistance value uses VR-70 (international electric (strain) system) to measure.
(evaluation)
Zero: do not see corrosion fully.
△: corrosion sporadicly exists.
*: serious corrosion takes place.
[to the anticorrosive property of Cu]
With formed thickness be 200nm the Cu layer wafer under 50 ℃ at the photoresist shown in the following table 1 with dip treating in the stripper 30 minutes, measure the electrical sheet resistance value.Obtain the etch quantity of Cu by this measurement result, following commentary valency benchmark evaluation is to the anticorrosive property of Cu.The result is as shown in table 1.Need to prove that the mensuration of electrical sheet resistance value is used the identical determinator of anticorrosive property test with above-mentioned Ag.
(evaluation)
Zero: do not see corrosion fully.
△: corrosion sporadicly exists.
*: serious corrosion takes place.
[table 1]
| Composition (A) | Composition (B) | Composition (C) | Anticorrosive | Fissility | Anticorrosive property | |||
| Dry etching | Wet etching | Ag | Cu | |||||
| Embodiment 1 | DEHA(5) | MEA(65) | BDG(30) | - | ○ | ○ | ○ | ○ |
| Embodiment 2 | DEHA(3) | DGA(80) | BDG(17) | - | ○ | ○ | ○ | ○ |
| Embodiment 3 | DEHA(8) | MMA(55) | DMSO(37) | - | ○ | ○ | ○ | ○ |
| Embodiment 4 | DEHA(5) | MMA(64) | DMSO(30) | Catechol (1) | ○ | ○ | ○ | ○ |
| Embodiment 5 | DEHA(5) | MMA(64.5) | DMSO(30) | Thioglycerol (0.5) | ○ | ○ | ○ | ○ |
| Embodiment 6 | DEHA(20) | MEA(50) | NMP(30) | - | ○ | ○ | ○ | ○ |
| Embodiment 7 | DEHA(1) | MIPA(74) | NMP(20) | Glucose (5) | ○ | ○ | ○ | ○ |
| Embodiment 8 | DEHA(1) | MIPA(58) | EDG(40) | BTA(1) | ○ | ○ | ○ | ○ |
| Embodiment 9 | DEHA(5) | MEA(70) | EDG(20) | Butyl glucoside (5) | ○ | ○ | ○ | ○ |
| Embodiment 10 | DEHA(5) | MEA(64) | EDG(30) | IR42(1) | ○ | ○ | ○ | ○ |
| Comparative example 1 | - | MEA(70) | BDG(30) | - | ○ | ○ | × | × |
| Comparative example 2 | - | - | BDG(100) | - | × | △ | × | ○ |
| Comparative example 3 | - | MEA(100) | - | - | × | × | × | × |
| Comparative example 4 | DEHA(10) | - | BDG(90) | - | × | △ | ○ | ○ |
| Comparative example 5 | DEHA(10) | MEA(90) | - | - | × | × | ○ | ○ |
| Comparative example 6 | DEHA(30) | MEA(40) | BDG(30) | - | × | △ | ○ | ○ |
| Comparative example 7 | DEHA(5) | MEA(5) | BDG(90) | - | × | △ | ○ | ○ |
| Comparative example 8 | DEHA(5) | MEA(90) | BDG(5) | - | × | × | ○ | ○ |
DEHA: diethyl hydramine
MEA: monoethanolamine
DGA:2-(2-amino ethoxy) ethanol
The MMA:N-methylethanolamine
MIPA: monoisopropanolamine
BDG: diglycol monotertiary butyl ether
EDG: carbiphene
DMSO: dimethyl sulfoxide (DMSO)
BTA: benzotriazole
IR42:2,2 '-{ [(5-methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino group } di-methylcarbinol
Result by table 1 can confirm that the stripper of embodiment 1～10 is good to both anticorrosive properties of Ag, Cu, and in addition, the fissility of photoresist is also good.On the other hand, the stripper that does not contain the comparative example 1～3 of composition (A) all has corrosion to any or 2 kinds among Ag and the Cu.In addition, though the stripper of comparative example 4～8 obtains good result aspect anticorrosive property, aspect fissility, than existing stripper spended time, so be difficult to obtain simultaneously the effect of fissility and anticorrosive property.
Claims (9)
1, a kind of photoresist stripper, described photoresist contains (A) N below the 20 quality % more than the 0.5 quality % with stripper, N-diethyl hydramine, following (B) alkanolamine of the above 90 quality % of 10 quality % and following (C) water-miscible organic solvent of the above 90 quality % of 10 quality %.
2, photoresist stripper as claimed in claim 1, wherein, the use level of described composition (B) is for surpassing below 30 quality % to the 90 quality %.
3, photoresist stripper as claimed in claim 1, wherein, the use level of described composition (B) is below the above 90 quality % of 50 quality %.
4, photoresist stripper as claimed in claim 1, wherein, the use level of described composition (A) is below the above 10 quality % of 1 quality %.
5, photoresist stripper as claimed in claim 1, wherein, described composition (B) is a monoethanolamine.
6, photoresist stripper as claimed in claim 1, wherein, described composition (C) is the diglycol monotertiary butyl ether.
7, photoresist stripper as claimed in claim 1 is used to peel off the photoresist film on the substrate that has formed the metal level that contains silver.
8, photoresist stripper as claimed in claim 1 is used to peel off the photoresist film on the substrate that has formed the silver-colored distribution that contains copper.
9, a kind of disposal route of substrate, described method comprises following operation: form photoresist film on the substrate that has formed the metal level that contains silver, to this photoresist film expose, development treatment, this substrate of etching and processing is further cleaned residue and the etch residue of removing described photoresist film with the described photoresist of claim 1 with stripper then.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP174304/2006 | 2006-06-23 | ||
| JP2006174304A JP2008003399A (en) | 2006-06-23 | 2006-06-23 | Photoresist stripping liquid and method for processing substrate using the liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101093364A true CN101093364A (en) | 2007-12-26 |
Family
ID=38991670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101125362A Pending CN101093364A (en) | 2006-06-23 | 2007-06-20 | Stripping liquid for photo-induced resist and base plate processing method using the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2008003399A (en) |
| KR (1) | KR20070122141A (en) |
| CN (1) | CN101093364A (en) |
| TW (1) | TW200801857A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102141743A (en) * | 2010-08-25 | 2011-08-03 | 上海飞凯光电材料股份有限公司 | Photoresist peeling solution composition with metal protection |
| CN102227687A (en) * | 2008-12-25 | 2011-10-26 | 长瀬化成株式会社 | Photoresist remover composition, method for removing photoresist of multilayer metal circuit board, and method for producing multilayer metal circuit board |
| CN103293883A (en) * | 2012-02-23 | 2013-09-11 | 奇美实业股份有限公司 | Photoresist stripping liquid composition and application thereof |
| CN107239006A (en) * | 2016-03-28 | 2017-10-10 | 东友精细化工有限公司 | Anticorrosive additive stripping liquid controlling composition, flat board and its manufacture method and display device |
| CN109378271A (en) * | 2018-10-22 | 2019-02-22 | 京东方科技集团股份有限公司 | The preparation method of patterned metallic diaphragm, thin film transistor (TFT), display base plate |
| CN110029331A (en) * | 2019-04-24 | 2019-07-19 | 南昌大学 | A kind of sensitizing solution and its sensitization technique for chemical plating of non-metal material copper |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5404459B2 (en) * | 2010-02-08 | 2014-01-29 | 東京応化工業株式会社 | Lithographic cleaning liquid and wiring forming method |
| KR101586453B1 (en) * | 2014-08-20 | 2016-01-21 | 주식회사 엘지화학 | Stripper composition for removing photoresist and stripping method of photoresist using the same |
| CN112540515B (en) * | 2020-12-16 | 2023-11-21 | 江苏艾森半导体材料股份有限公司 | Photoresist photoresist stripping solution and preparation method and application thereof |
-
2006
- 2006-06-23 JP JP2006174304A patent/JP2008003399A/en active Pending
-
2007
- 2007-06-19 KR KR1020070059862A patent/KR20070122141A/en active IP Right Grant
- 2007-06-20 CN CNA2007101125362A patent/CN101093364A/en active Pending
- 2007-06-22 TW TW096122574A patent/TW200801857A/en unknown
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227687A (en) * | 2008-12-25 | 2011-10-26 | 长瀬化成株式会社 | Photoresist remover composition, method for removing photoresist of multilayer metal circuit board, and method for producing multilayer metal circuit board |
| CN102141743A (en) * | 2010-08-25 | 2011-08-03 | 上海飞凯光电材料股份有限公司 | Photoresist peeling solution composition with metal protection |
| CN103293883A (en) * | 2012-02-23 | 2013-09-11 | 奇美实业股份有限公司 | Photoresist stripping liquid composition and application thereof |
| CN107239006A (en) * | 2016-03-28 | 2017-10-10 | 东友精细化工有限公司 | Anticorrosive additive stripping liquid controlling composition, flat board and its manufacture method and display device |
| CN107239006B (en) * | 2016-03-28 | 2020-09-01 | 东友精细化工有限公司 | Resist stripping liquid composition, flat plate, method for manufacturing flat plate, and display device |
| CN109378271A (en) * | 2018-10-22 | 2019-02-22 | 京东方科技集团股份有限公司 | The preparation method of patterned metallic diaphragm, thin film transistor (TFT), display base plate |
| CN109378271B (en) * | 2018-10-22 | 2021-01-26 | 京东方科技集团股份有限公司 | Preparation method of patterned metal film layer, thin film transistor and display substrate |
| US11037801B2 (en) | 2018-10-22 | 2021-06-15 | Boe Technology Group Co., Ltd. | Fabrication methods of patterned metal film layer, thin film transistor and display substrate |
| CN110029331A (en) * | 2019-04-24 | 2019-07-19 | 南昌大学 | A kind of sensitizing solution and its sensitization technique for chemical plating of non-metal material copper |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008003399A (en) | 2008-01-10 |
| TW200801857A (en) | 2008-01-01 |
| KR20070122141A (en) | 2007-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101093364A (en) | Stripping liquid for photo-induced resist and base plate processing method using the same | |
| CN101544932B (en) | Stripper for dry film removal | |
| TWI332126B (en) | Photoresist stripping solution | |
| CN101454872A (en) | Stripper composition for photoresist | |
| CN102124414B (en) | Photoresist remover composition and method for removing photoresist | |
| CN101878452A (en) | Remover liquid composition and method for removing resin layer by using the same | |
| US20010051318A1 (en) | Stripper pretreatment | |
| KR100288769B1 (en) | Stripper composition for photoresist | |
| CN1985217A (en) | Non-aqueous microelectronic cleaning compositions containing fructose | |
| JP2008542830A (en) | Fine line resist stripping method | |
| WO2012168485A1 (en) | Composition of solutions and conditions for use enabling the stripping and complete dissolution of photoresists | |
| CN103809396A (en) | Photoresist stripper composition for preventing stain and preparing method of flat plate panel substrate | |
| KR100850163B1 (en) | Stripper composition for photoresist | |
| KR20080017849A (en) | Photoresist stripping liquid containing amide and a methodof stripping photoresists using the same | |
| TW546553B (en) | Photoresist stripping liquid composition and a method of stripping photoresists using the same | |
| KR101341701B1 (en) | Resist stripper composition and a method of stripping resist using the same | |
| KR101366904B1 (en) | Stripper composition for removing dry etching residue and stripping method | |
| CN107239006B (en) | Resist stripping liquid composition, flat plate, method for manufacturing flat plate, and display device | |
| CN112859552A (en) | Vanadium oxide corrosion-inhibition fluorine-containing stripping liquid, preparation method and application thereof | |
| KR101341746B1 (en) | Resist stripper composition and a method of stripping resist using the same | |
| KR101292497B1 (en) | Resist stripper composition and stripping method of resist using the same | |
| KR102092919B1 (en) | Resist stripper composition and a method of stripping resist using the same | |
| US20230091893A1 (en) | Stripper composition for removing photoresist and stripping method of photoresist using the same | |
| CN102483590B (en) | Resist stripper composition for forming copper-based wiring | |
| KR20100089917A (en) | Composition for removing photoresist and method of forming a pattern using the composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20071226 |