CN101089545B - 一种射频单电子晶体管位移传感器的制作方法 - Google Patents
一种射频单电子晶体管位移传感器的制作方法 Download PDFInfo
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- CN101089545B CN101089545B CN2006100839962A CN200610083996A CN101089545B CN 101089545 B CN101089545 B CN 101089545B CN 2006100839962 A CN2006100839962 A CN 2006100839962A CN 200610083996 A CN200610083996 A CN 200610083996A CN 101089545 B CN101089545 B CN 101089545B
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CN104992941B (zh) * | 2015-07-01 | 2018-02-23 | 东南大学 | 硅基低漏电流固支梁栅cmos传输门及制备方法 |
CN110110834B (zh) * | 2019-04-15 | 2024-04-26 | 同济大学 | 基于倒f天线的无源无线rfid位移传感器及传感系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1449510A (zh) * | 2000-08-31 | 2003-10-15 | 尤尼瑟驰有限公司 | 纳米电子电路的制造 |
CN1475807A (zh) * | 2003-07-18 | 2004-02-18 | 清华大学 | 碳纳米管场致发射微机械加速度计 |
CN1566961A (zh) * | 2003-07-09 | 2005-01-19 | 友达光电股份有限公司 | 半导体加速感测器 |
US6897009B2 (en) * | 1999-11-29 | 2005-05-24 | Trustees Of The University Of Pennsylvania | Fabrication of nanometer size gaps on an electrode |
CN1694274A (zh) * | 2005-05-20 | 2005-11-09 | 中国科学院合肥物质科学研究院 | 磁敏传感器阵列及其制造方法 |
CN1715838A (zh) * | 2005-06-30 | 2006-01-04 | 西安交通大学 | 一种多传感器集成芯片 |
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- 2006-06-16 CN CN2006100839962A patent/CN101089545B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6897009B2 (en) * | 1999-11-29 | 2005-05-24 | Trustees Of The University Of Pennsylvania | Fabrication of nanometer size gaps on an electrode |
CN1449510A (zh) * | 2000-08-31 | 2003-10-15 | 尤尼瑟驰有限公司 | 纳米电子电路的制造 |
CN1566961A (zh) * | 2003-07-09 | 2005-01-19 | 友达光电股份有限公司 | 半导体加速感测器 |
CN1475807A (zh) * | 2003-07-18 | 2004-02-18 | 清华大学 | 碳纳米管场致发射微机械加速度计 |
CN1694274A (zh) * | 2005-05-20 | 2005-11-09 | 中国科学院合肥物质科学研究院 | 磁敏传感器阵列及其制造方法 |
CN1715838A (zh) * | 2005-06-30 | 2006-01-04 | 西安交通大学 | 一种多传感器集成芯片 |
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