CN101079463A - 发光二极管芯片及其制造方法以及包括其的液晶显示器件 - Google Patents
发光二极管芯片及其制造方法以及包括其的液晶显示器件 Download PDFInfo
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Abstract
一种发光二极管芯片包括衬底,衬底上的缓冲层,缓冲层上的第一半导体层,第一半导体层上的发光层,发光层上的第二半导体层,其中通过第二半导体层和发光层部分地暴露出第一半导体层,在暴露出的第一半导体层上的第一电极,以及第二半导体层上具有格状的第二电极。
Description
本申请要求享有2006年5月23日在韩国递交的申请号为10-2006-0046213的申请的权益,在此引用其全部内容作为参考。
技术领域
本发明涉及一种发光二极管(LED),特别是涉及一种背光单元的发光二极管(LED)芯片及其制造方法,以及包括该芯片的液晶显示(LCD)器件。
背景技术
发光二极管(LED)由于其小尺寸、低功耗和高可靠性而被广泛用作光源。
LED由III-V半导体化合物形成。通常,发出红、绿和黄光的LED由包括作为V族的元素的砷化物(As)和磷化物(P)的III-V半导体化合物形成,例如砷化铝镓(AlGaAs)、磷化镓铝(GaAlP)、磷化镓(GaP)或磷化铝镓铟(InGaAlP)。发出绿或蓝光的LED由包括氮化镓(GaN)的III-V半导体化合物形成。
图1示出了根据相关技术的LED芯片的示意图。
在图1中,LED芯片37包括衬底21、缓冲层23、n型半导体层25、发光层27以及p型半导体层29。LED芯片37还包括n型电极35、p型电极33以及透明电极31。n型电极35设置在n型半导体层25的上面,并通过部分去除p型半导体层29、发光层27和n型半导体层25被暴露。透明电极31设置在p型半导体层29上,并且p型电极33形成在透明电极31上。n型电极35和p型电极33分别将载流子提供到n型半导体层25和p型半导体层29。
当正向偏压施加到n型电极35和p型电极33时,电子和空穴经由n型半导体层25和p型半导体层29传输到发光层27中,并且电子与空穴复合,从而发光。
包括LED芯片37的LED灯被广泛用作户外广告公告牌或液晶显示(LCD)器件,这些器件不是自发光的并且需要额外光源。
从LED芯片37发出的光是包括各种偏振光的自然光,其具有不同的电场振动面。
然而,在例如LCD器件的采用偏振光的器件中,需要偏振器,并且从LED芯片37发出的光仅有约50%通过偏振器。此外,通过偏振器的光当通过例如液晶层或绝缘层的其它层时,被部分吸收或反射。因此,存在光损失并且器件的亮度不高。为了提高器件的亮度,就需要增加功耗。
发明内容
因此,本发明涉及一种背光单元的发光二极管芯片及其制造方法以及包括该芯片的液晶显示器件,能够基本上克服因相关技术的局限和缺点带来的一个或多个问题。
本发明的附加优点和特征将在后面的描述中得以阐明,通过以下描述,将使它们对于本领域普通技术人员在某种程度上显而易见,或者可通过实践本发明来认识它们。本发明的这些和其他优点可通过书面描述及其权利要求以及附图中具体指出的结构来实现和得到。
本发明的一个优点是提供了一种发出预定偏振光的发光二极管芯片及其制造方法。
本发明的另一个优点是提供了一种包括发光二极管的液晶显示(LCD)器件,其能够提高光效率并具有低功耗和高亮度。
在第一个方面,一种发光二极管芯片包括衬底,衬底上的缓冲层,缓冲层上的第一半导体层,第一半导体层上的发光层,发光层上的第二半导体层,其中通过第二半导体层和发光层部分地暴露出第一半导体层,在暴露出的第一半导体层上的第一电极,以及第二半导体层上具有格状的第二电极。
在第二个方面,一种发光二极管芯片的制造方法包括在衬底上形成缓冲层,在缓冲层上形成第一半导体层,在第一半导体层上形成发光层,在发光层上形成第二半导体层,选择性地去除第二半导体层和发光层从而部分地暴露出第一半导体层,在暴露出的第一半导体层上形成第一电极,以及在第二半导体层上形成具有格状的第二电极。
在第三个方面,一种液晶显示器件包括底盖;底盖上面的背光单元,所述背光单元包括印刷电路板、印刷电路板上的发光二极管灯、以及发光二极管灯上的光学片,其中各发光二极管灯具有发光二极管芯片,所述发光二极管芯片包括衬底,衬底上的缓冲层,缓冲层上的第一半导体层,第一半导体层上的发光层,发光层上的第二半导体层,其中通过第二半导体层和发光层部分地暴露出第一半导体层,在暴露出的第一半导体层上的第一电极,以及第二半导体层上具有格状的第二电极;构成背光单元的边缘的主架;背光单元上面的液晶面板,所述液晶面板包括第一和第二基板以及夹在第一和第二基板之间的液晶层;以及连接到主架和底盖并覆盖液晶面板的正面边缘的顶盖。
应该理解,上面的概括性描述和下面的详细描述都是示意性和解释性的,意欲对本发明的权利要求提供进一步的解释。
附图说明
本申请所包括的附图用于提供对本发明的进一步理解,并且包括在该申请中并且作为本申请的一部分,示出了本发明的实施方式并且连同说明书一起用于解释本发明的原理。附图中:
图1示出了根据相关技术的LED芯片的示意图;
图2A示出了根据本发明的LED灯的示意图,并且图2B示出了沿图2A的线I I-II提取的截面图;
图3示出了根据本发明示例性实施方式的LED芯片的示意图;
图4示出了根据本发明示例性实施方式的LED芯片的截面图;以及
图5示出了根据本发明包括LED背光单元的LCD器件的透视图。
具体实施方式
现在具体描述本发明的优选实施方式,它们的实施例示于附图中。
图2A示出了根据本发明的发光二极管(LED)灯的示意图,并且图2B示出了沿图2A的线II-II提取的截面图。
在图2A和图2B中,LED灯141包括设置在印刷电路板149上并具有开口的反射框架143。控制单元(未示出)形成在印刷电路板149上。LED芯片137设置在开口内,并且引线部分151夹在LED芯片137和印刷电路板149之间。磷光材料147覆盖LED芯片137。透镜145形成在磷光材料147和LED芯片137的上面,并且覆盖反射框架143的开口。LED芯片137发出偏振光,并且透镜145均匀地散射来自LED芯片137的光。
反射框架143由反射性能好的材料形成。当发光时,反射框架143释放产生的高温。印刷电路板149可以是能够辐射热量的金属芯印刷电路板。LED灯141可以包括用红、绿和蓝色之一着色的透明树脂。
当电压施加到LED芯片137时,从LED芯片137发光。光入射到磷光材料147上并被透镜145散射。如上所述,LED灯141的LED芯片137发射预定偏振光。
图3示出了根据本发明示例性实施方式的LED芯片的示意图。LED芯片可以具有基本上正方形的形状。
在图3中,LED芯片137包括顺序设置在衬底121的第一表面上的缓冲层123、第一半导体层125、发光层127、第二半导体层129以及透明电极131。LED芯片137还包括第一电极135和第二电极133。反射层139形成在衬底121的第二表面上。
部分去除第二半导体层129和发光层127,从而暴露第一半导体层125。也可以部分去除第一半导体层125。第一电极135设置在暴露的第一半导体层125上。第二电极133设置在透明电极131上。第二电极133具有包括平行线的格状。因此,由于格状第二电极133,从LED芯片137发出的光被偏振。
下面将描述根据本发明的LED芯片的制造方法。LED芯片137可以是氮化镓基(gallium nitride-based)的。
在衬底121上形成缓冲层123。衬底121可以由例如蓝宝石或碳化硅(SiC)的绝缘材料形成。缓冲层123使位错最小并控制缺陷的传播。缓冲层123可以通过低温生长方法来形成。缓冲层123可以包括氮化镓(GaN)、氮化铝(AlN)、氮化铝镓(AlGaN)和氮化铟镓(InGaN)之一。例如,缓冲层123可以通过使用金属有机化学气相沉积(MOCVD)方法、分子束外延(MBE)方法和气相外延(VPE)方法之一由氮化镓(GaN)形成。
在缓冲层123上形成第一半导体层125。第一半导体层125可以是n型的并且可以由例如硅掺杂氮化镓(GaN:Si)形成。
在第一半导体层125上形成发光层127。发光层127可以由氮化铟镓/氮化铝镓(InGaN/AlGaN)、氮化铟镓/氮化镓(InGaN/GaN)和氮化镓/氮化铝镓(GaN/AlGaN)之一形成。InGaN/AlGaN或GaN/AlGaN的发光层127发出紫外(UV)光,其中为了提供光效率,可以在发光层127上进一步形成镁掺杂的氮化铝镓(AlGaN:Mg)层。InGaN/GaN的发光层127发出蓝光。
第二半导体层129可以是p型。第二半导体层129可以由例如镁掺杂的氮化镓(GaN:Mg)形成。
为了高效注射载流子,在第二半导体层129上形成透明电极131,并且可以也可以省略透明电极131。透明电极131沿第二半导体层129的水平方向均匀并高效地扩散载流子。透明电极131可以由超薄金属层形成。例如,透明电极131可以由镍和金(Ni/Au)形成。
通过干刻法部分去除透明电极131、第二半导体层129、发光层127和第一半导体层125,从而暴露第一半导体层125。
在暴露的第一半导体层125上形成第一电极135。第一电极135可以由金属材料形成,从而与第一半导体层125形成欧姆接触。例如,第一电极135可以由钛和铝(Ti/Al)形成。
通过沉积金属材料并随后用例如光刻法的构图方法选择性地蚀刻该金属材料而在透明电极131上形成格状第二电极133。第二电极133可以由金属材料形成,从而与第二半导体层129形成欧姆接触。例如第二电极133可以由镍和金(Ni/Au)形成。
在衬底121的与缓冲层123相对的表面上形成反射层139。反射层139可以通过溅射方法或蒸镀方法由金属材料形成。
图4示出了根据本发明示例性实施方式的LED芯片的截面图。图4示出了LED芯片中光的行进。
当正向偏压施加在第一电极135和第二电极133之间时,电子和空穴分别通过第一半导体层125和第二半导体层129被传输到发光层127中。电子和空穴在发光层127中复合,并且随后发光。从发光层127发出的光是非偏振的并且包括偏振光,所述偏振光具有与格状第二电极133的线平行或垂直的电场。
在此,具有与格状第二电极133的线平行的电场的第一偏振光使电子沿线的长度移动。因为电子自由移动,当反射光时格状第二电极133以与金属表面相似的方式工作。因此,第一偏振光的一部分被吸收到格状第二电极133中,并且第一偏振光的剩余部分向入射方向反射。
同时,对于具有与格状第二电极133的线垂直的电场的第二偏振光,电子不能穿越各线的宽度而移动很远。因而,极少的能量被损失或反射,并且第二偏振光可以通过格状第二电极133行进。
由格状第二电极133反射的第一偏振光被反射层139再次反射,并且发射到格状第二电极133。如果衬底121的厚度比第一偏振光的相干长度厚,所述相干长度是指从相干源到电磁波保持特定相干程度的点的传播距离,那么第一偏振光失去偏振特性。因而,通过衬底121并到达格状第二电极133的第一偏振光的部分具有与格状第二电极133的线垂直的电场,并通过格状第二电极133。可选地,即使衬底121的厚度不比第一偏振光的相干长度厚,第一偏振光通过处理反射层139的表面或在反射层139的表面上形成不平坦而可以失去偏振特性。
因为全部第一偏振光在反射层139没有发生反射,为了提高反射光的效率,在衬底121和反射层139之间可以形成λ/4板。λ/4板构成全反射条件,并且基本上可以反射来自格状第二电极133的全部第一偏振光。
包括LED芯片的LED灯可以用作液晶显示(LCD)器件的背光单元。
图5示出了根据本发明包括LED背光单元的LCD器件的透视图,并且LED背光单元向液晶面板提供偏振光。
在图5中,背光单元161设置在液晶面板151的背面,并且矩形框架的主架171构成背光单元161和液晶面板151的边缘。用于避免光损失的底盖181在液晶面板151的背面与主架171结合,从而覆盖背光单元161。顶盖191连接到主架171和底盖181,并且覆盖液晶面板151的正面的边缘。
液晶面板151产生图像。液晶面板151包括彼此粘接的第一和第二基板(未示出),其间夹有液晶层。液晶面板151在第一和第二基板之一上包括栅线、数据线、薄膜晶体管、和液晶电容。数据和栅驱动集成电路153和155分别粘接到液晶面板151的相邻侧面。栅驱动电路155通过栅线提供用于导通/截止薄膜晶体管的扫描信号。数据驱动集成电路153通过数据线向液晶电容提供各帧的图像信号。虽然在图中未具体示出,液晶面板151在外侧还包括第一和第二偏振器。更具体的,第一偏振器可以设置在液晶面板151的第一基板和背光单元161之间。第二偏振器可以设置在液晶面板151的第二基板的外表面上。第一和第二偏振器具有彼此垂直的光轴。平行于光轴的线性偏振光透射通过第一和第二偏振器。
背光单元161向液晶面板161提供光。背光单元161包括多个金属芯印刷电路板(MCPCB)149、多个LED灯141、反射片169、透明板165、和多个光学片157。
各MCPCB 149为条状。MCPCB 149排列在底盖181的内表面上并彼此间隔。多个LED灯141呈一条线设置在各MCPCB 149上。LED灯141可以是红、绿和蓝LED灯之一,并且红、绿和蓝LED灯141可以顺序排列在各MCPCB 149上,由此混合红、绿和蓝光以产生白光。可选地,LED灯141可以是白LED灯。反射片169设置在底盖181上。反射片169覆盖多个MCPCB 149并且具有分别对应于多个LED灯141的多个通孔(未示出)。因而,多个LED灯141分别通过多个通孔突出。光学片157设置在LED灯141和反射片169的上面。光学片157可以包括棱镜片和散射片。透明板165设置在多个LED灯141和光学片157之间。透明板165包括对应于各LED灯141的反射点163。
各LED灯141包括图3所示的LED芯片,并且因而发出预定偏振光。如上所述,从LED灯141发出的偏振光与图3的格状第二电极133的线垂直。第一偏振器的光轴有益地设置为与格状第二电极133的线垂直。基本上,从LED灯141发出的全部光通过第一偏振器。因此,光损失极少,并且光效率被提高为相关技术的约两倍。
在本发明中,因为LED芯片发出偏振光,在包括具有LED芯片的背光单元的LCD器件中的光损失极少。此外,降低了功耗,并且提高了器件的亮度。
很明显,本领域技术人员可在不背离本发明精神或范围的基础上对本发明的发光二极管芯片和液晶显示器件做出修改和变化。因此,本发明意欲覆盖落入本发明权利要求及其等效范围内的各种修改和变化。
Claims (18)
1、一种发光二极管芯片,包括:
衬底;
衬底上的缓冲层;
缓冲层上的第一半导体层;
第一半导体层上的发光层;
发光层上的第二半导体层,其中通过第二半导体层和发光层部分地暴露出第一半导体层;
在暴露出的第一半导体层上的第一电极;以及
第二半导体层上具有格状的第二电极。
2、根据权利要求1所述的发光二极管芯片,其特征在于,所述第二电极包括线,并且发光二极管仅发出与所述线垂直的线性偏振光。
3、根据权利要求1所述的发光二极管芯片,其特征在于,还包括在第二半导体层和第二电极之间的透明电极。
4、根据权利要求1所述的发光二极管芯片,其特征在于,第一半导体层由硅掺杂氮化镓形成,并且第二半导体层由镁掺杂氮化镓形成。
5、根据权利要求4所述的发光二极管芯片,其特征在于,发光层由氮化铟镓/氮化镓形成。
6、根据权利要求4所述的发光二极管芯片,其特征在于,发光层由氮化铟镓/氮化铝镓和氮化镓/氮化铝镓之一形成。
7、根据权利要求6所述的发光二极管芯片,其特征在于,还包括在发光层和第二半导体层之间的镁掺杂氮化铝镓层。
8、根据权利要求1所述的发光二极管芯片,其特征在于,还包括在所述衬底的与缓冲层相对的一面的反射层。
9、根据权利要求1所述的发光二极管芯片,其特征在于,所述衬底由蓝宝石和碳化硅之一形成。
10、一种发光二极管芯片的制造方法,包括:
在衬底上形成缓冲层;
在缓冲层上形成第一半导体层;
在第一半导体层上形成发光层;
在发光层上形成第二半导体层;
选择性地去除第二半导体层和发光层从而部分地暴露出第一半导体层;
在暴露出的第一半导体层上形成第一电极;以及
在第二半导体层上形成具有格状的第二电极。
11、根据权利要求10所述的方法,其特征在于,还包括在第二半导体层和第二电极之间形成透明电极。
12、根据权利要求10所述的方法,其特征在于,还包括在衬底的与缓冲层相对的一面上形成反射层。
13、根据权利要求12所述的方法,其特征在于,通过溅射方法和蒸镀方法之一形成反射层。
14、根据权利要求10所述的方法,其特征在于,通过沉积金属层和用光刻法对金属层构图来形成第二电极。
15、根据权利要求10所述的方法,其特征在于,通过金属有机化学气相沉积方法、分子束外延方法、和气相外延方法之一来形成第一半导体层、发光层和第二半导体层。
16、一种液晶显示器件,包括:
底盖;
底盖上面的背光单元,所述背光单元包括印刷电路板、印刷电路板上的发光二极管灯、以及发光二极管灯上的光学片,其中各发光二极管灯具有发光二极管芯片,所述芯片包括:
衬底;
衬底上的缓冲层;
缓冲层上的第一半导体层;
第一半导体层上的发光层;
发光层上的第二半导体层,其中通过第二半导体层和发光层部分地暴露出第一半导体层;在暴露出的第一半导体层上的第一电极;以及
第二半导体层上具有格状的第二电极;
构成背光单元的边缘的主架;
背光单元上面的液晶面板,所述液晶面板包括第一和第二基板以及夹在第一和第二基板之间的液晶层;以及
连接到主架和底盖并覆盖液晶面板的正面边缘的顶盖。
17、根据权利要求16所述的器件,其特征在于,液晶面板还包括在背光单元和第一基板之间的偏振器,其中所述偏振器具有与第二电极的线垂直的光轴。
18、根据权利要求16所述的器件,其特征在于,各发光二极管灯还包括在印刷电路板上并具有开口的反射框架,覆盖发光二极管芯片的磷光材料,以及磷光材料上面的透镜,其中发光二极管芯片设置在开口内。
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US8728842B2 (en) | 2008-07-14 | 2014-05-20 | Soraa Laser Diode, Inc. | Self-aligned multi-dielectric-layer lift off process for laser diode stripes |
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US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
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US9020003B1 (en) | 2012-03-14 | 2015-04-28 | Soraa Laser Diode, Inc. | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US9071039B2 (en) | 2009-04-13 | 2015-06-30 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
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US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
US9343871B1 (en) | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
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US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US9810383B2 (en) | 2011-01-24 | 2017-11-07 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
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US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
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EP2660883B1 (en) | 2009-12-09 | 2019-03-27 | LG Innotek Co., Ltd. | Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
WO2011140252A2 (en) * | 2010-05-05 | 2011-11-10 | University Of Utah Research Foundation | Directive optical device having a partially reflective grating |
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US20120018770A1 (en) * | 2010-07-23 | 2012-01-26 | Min-Hao Michael Lu | Oled light source having improved total light emission |
US9455242B2 (en) * | 2010-09-06 | 2016-09-27 | Epistar Corporation | Semiconductor optoelectronic device |
US8373183B2 (en) | 2011-02-22 | 2013-02-12 | Hong Kong Applied Science and Technology Research Institute Company Limited | LED package for uniform color emission |
CN102148309B (zh) * | 2011-03-22 | 2013-09-18 | 东莞市福地电子材料有限公司 | 一种结构改良的led芯片 |
JP6029912B2 (ja) * | 2012-09-25 | 2016-11-24 | スタンレー電気株式会社 | 半導体発光素子 |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
US11515456B2 (en) * | 2019-02-21 | 2022-11-29 | Innolux Corporation | LED with light adjusting layer extending past the LED |
CN111834388B (zh) * | 2020-06-12 | 2023-08-22 | 福州大学 | 一种带有单片集成驱动电路的μLED显示芯片 |
FR3118302B1 (fr) * | 2020-12-22 | 2023-11-10 | Commissariat Energie Atomique | Dispositif électroluminescent |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0955532A (ja) * | 1995-08-14 | 1997-02-25 | Sony Corp | 半導体受光素子 |
TW365071B (en) * | 1996-09-09 | 1999-07-21 | Toshiba Corp | Semiconductor light emitting diode and method for manufacturing the same |
DE19955747A1 (de) * | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
JP2001274456A (ja) * | 2000-01-18 | 2001-10-05 | Sharp Corp | 発光ダイオード |
US6642548B1 (en) * | 2000-10-20 | 2003-11-04 | Emcore Corporation | Light-emitting diodes with loop and strip electrodes and with wide medial sections |
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
AU2003252359A1 (en) * | 2002-08-01 | 2004-02-23 | Nichia Corporation | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
CN100502060C (zh) * | 2003-02-19 | 2009-06-17 | 日亚化学工业株式会社 | 氮化物半导体元件 |
US8134172B2 (en) | 2003-09-01 | 2012-03-13 | Lg Innotek Co., Ltd. | LED and fabrication method thereof |
JP4292925B2 (ja) * | 2003-09-16 | 2009-07-08 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
US20050099587A1 (en) * | 2003-11-06 | 2005-05-12 | Min-Chih Hsuan | Method for repairing white spots in liquid crystal display panel |
US20050152417A1 (en) * | 2004-01-08 | 2005-07-14 | Chung-Hsiang Lin | Light emitting device with an omnidirectional photonic crystal |
EP1733439B1 (en) * | 2004-03-18 | 2013-05-15 | Panasonic Corporation | Nitride based led with a p-type injection region |
JP2005284051A (ja) * | 2004-03-30 | 2005-10-13 | Hitachi Ltd | 半導体発光素子、それを用いた光源ユニット、光学ユニット及び映像表示装置 |
JP4305850B2 (ja) * | 2004-05-24 | 2009-07-29 | 株式会社 日立ディスプレイズ | バックライト装置及び表示装置 |
US20050273327A1 (en) * | 2004-06-02 | 2005-12-08 | Nokia Corporation | Mobile station and method for transmitting and receiving messages |
KR100665298B1 (ko) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | 발광장치 |
US7732334B2 (en) * | 2004-08-23 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR101217659B1 (ko) * | 2004-09-03 | 2013-01-02 | 스탠리 일렉트릭 컴퍼니, 리미티드 | El소자 |
JP2006086469A (ja) * | 2004-09-17 | 2006-03-30 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法 |
JPWO2006038665A1 (ja) * | 2004-10-01 | 2008-05-15 | 三菱電線工業株式会社 | 窒化物半導体発光素子およびその製造方法 |
KR100706507B1 (ko) * | 2005-06-02 | 2007-04-11 | 엘지전자 주식회사 | 디지털 비디오 녹화 및 재생 장치에서의 복수의 타이틀복사 방법 |
US7502401B2 (en) * | 2005-07-22 | 2009-03-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | VCSEL system with transverse P/N junction |
KR200410321Y1 (ko) | 2005-12-02 | 2006-03-07 | 주식회사 쎄라텍 | 발광소자용 패키지 |
-
2006
- 2006-05-23 KR KR1020060046213A patent/KR101263934B1/ko active IP Right Grant
-
2007
- 2007-05-22 CN CNB2007101037427A patent/CN100539222C/zh not_active Expired - Fee Related
- 2007-05-22 US US11/802,409 patent/US8247834B2/en not_active Expired - Fee Related
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KR20070113406A (ko) | 2007-11-29 |
US20070272933A1 (en) | 2007-11-29 |
US8247834B2 (en) | 2012-08-21 |
KR101263934B1 (ko) | 2013-05-10 |
CN100539222C (zh) | 2009-09-09 |
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