CN101061580A - Insulating circuit board and insulating circuit board provided with cooling sink section - Google Patents
Insulating circuit board and insulating circuit board provided with cooling sink section Download PDFInfo
- Publication number
- CN101061580A CN101061580A CN 200680001216 CN200680001216A CN101061580A CN 101061580 A CN101061580 A CN 101061580A CN 200680001216 CN200680001216 CN 200680001216 CN 200680001216 A CN200680001216 A CN 200680001216A CN 101061580 A CN101061580 A CN 101061580A
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- China
- Prior art keywords
- circuit board
- metallic plate
- sink section
- cooling sink
- soldering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000001816 cooling Methods 0.000 title claims abstract description 98
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 47
- 229910052718 tin Inorganic materials 0.000 claims description 99
- 238000009413 insulation Methods 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 62
- 239000012212 insulator Substances 0.000 claims description 59
- 239000004065 semiconductor Substances 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 239000002075 main ingredient Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000005755 formation reaction Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 238000011161 development Methods 0.000 description 7
- 239000010687 lubricating oil Substances 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000005482 strain hardening Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 229910000962 AlSiC Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018131 Al-Mn Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018459 Al—Ge Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- 229910018461 Al—Mn Inorganic materials 0.000 description 1
- 229910016525 CuMo Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001153 fluoro group Chemical class F* 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 pure Al Chemical class 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
An insulating circuit board is provided with an insulating board, a circuit board bonded to a first plane of the insulating board, and a metal plate bonded to a second plane of the insulating board. The circuit board is formed of an Al alloy having a purity of 99.98% or pure Al, and the metal plate is formed of an Al alloy having a purity of 98.00% but not more than 99.90%. A thickness (a) of the circuit board is, for instance, 0.2mm or more but not more than 0.8mm, and a thickness (b) of the metal plate is, for instance, 0.6mm or more but not more than 1.5mm, and an inequality of a/b=1 is satisfied. An insulating circuit board provided with a cooling sink section has the insulating circuit board, and a cooling sink section bonded to the metal plate through a second solder layer. The second solder layer is formed of a solder having Sn as a main ingredient, with a Young's modulus of, for instance, 35GPa or more, a 0.2% proof strength of, for instance, 30MPa or more, and a tensile strength of, for instance, 40MPa or more. The cooling sink section is formed of, for instance, pure Al or an Al alloy.
Description
Technical field
The present invention relates to employed insulator chain substrate of semiconductor device that big electric current, high voltage are controlled and the insulator chain substrate of being with cooling bath (cooling sink) portion.
The priority that Japan's patent application 2005-268093 number that the application advocates to apply for respectively on September 15th, 2005, Japan's patent application 2005-268094 number and Japan's patent application are 2005-268095 number, and its content quoted therewith.
Background technology
Insulator chain substrate as this band cooling sink section, following patent documentation 1 disclosed substrate is for example arranged, the summary of this substrate constitutes and comprises: the circuit board that a side who have the insulation board that formed by pottery etc., is bonded on described insulation board is surperficial and be bonded on the insulator chain substrate of metallic plate on the opposing party surface of described insulation board, and the cooling end that is provided with at lower surface described metallic plate and the surface opposite side that is engaged in described insulation board, semiconductor chip is bonded on the surface of described circuit board by soldering-tin layer.
Described cooling end possesses heating panel and is supplied to the cooling sink section of cold-producing medium in inside, and these heating panels and cooling sink section are established heat conductivity lubricating oil (for example silicon grease) and utilized bolted to constitute the structure of connection by folder between the two.And the heating panel of described cooling end engages with described metallic plate via soldering-tin layer.
; the height outputization of the power module (power module) that constitutes along with the surface engagement semiconductor chip of the circuit board in the insulator chain substrate of described band cooling sink section in recent years; more require not reduce the joint reliability between described each inscape that constitutes this power module, and reduce the total thermal resistance of this power module stacked direction.But described heat conductivity lubricating oil becomes the main cause that hinders described total thermal resistance reduction.
Patent documentation 1: the spy opens flat 8-264680 communique
Summary of the invention
The present invention In view of the foregoing proposes, and its purpose is, a kind of joint reliability that does not reduce between each inscape is provided, and can reduce the insulator chain substrate and the insulator chain substrate of being with cooling sink section of the total thermal resistance of stacked direction.
To achieve these goals, first mode of insulator chain substrate of the present invention possesses: insulation board, circuit board with side's surface engagement of described insulation board, with with the metallic plate of the opposing party's surface engagement of described insulation board, semiconductor chip is bonded on the surface of described circuit board via first soldering-tin layer, and cooling sink section is bonded on described metallic plate and the lower surface surface opposite side that is engaged in described insulation board via second soldering-tin layer, described circuit board is formed by the Al alloy or the pure Al of purity more than 99.98%, described metallic plate by purity more than 98.00% the Al alloy below 99.90% form.
In first mode of insulator chain substrate of the present invention, described circuit board is formed by the Al alloy or the pure Al of purity more than 99.98%, described metallic plate by purity more than 98.00% the Al alloy below 99.90% form.Therefore, do not need folder to establish heat conductivity lubricating oil, even reduce joint interface quantity, the power module that the total thermal resistance of formation stacked direction is lowered, by described metallic plate directly being engaged with cooling sink section, also can suppress be full of cracks and in described first, second soldering-tin layer, produce and development via described second soldering-tin layer.
Promptly, if described circuit board is formed by the Al alloy or the pure Al of purity more than 99.98%, then when thermal cycle acts on power module, big deformation is accumulated in circuit board, can suppress to be accumulated in the deformation quantity in described first soldering-tin layer, in this first soldering-tin layer, produce and development thereby can suppress be full of cracks.
In addition, if described metallic plate by purity more than 98.00% the Al alloy below 99.90% form, then when thermal cycle acts on power module, can make this metallic plate work hardening by accumulating in the deformation of metallic plate.Therefore, the contribution degree that insulation board is occupied in the thermal deformation movement of insulator chain substrate integral body reduces, and can increase the contribution degree of metallic plate on the other hand.Therefore, the thermal coefficient of expansion of this insulator chain substrate integral body increases in appearance, reduce with the difference of the thermal coefficient of expansion of described cooling sink section, the deformation quantity of accumulating in described second soldering-tin layer is reduced, in this second soldering-tin layer, produce and development thereby can suppress be full of cracks.
In sum, a kind of joint reliability that can not reduce between described each inscape that constitutes power module can be provided, the insulator chain substrate of the total thermal resistance of this power module stacked direction can be reduced.
The thickness of described circuit board (a) can be set as below the above 0.8mm of 0.2mm, and the thickness of described metallic plate (b) is set as below the above 1.5mm of 0.6mm, and a/b≤1.
Under this situation, can further relax the stress that in described first, second soldering-tin layer, produces.
That is, the thickness of described metallic plate (b) is below the above 1.5mm of 0.6mm, and a/b≤1, and its thickness is thickeied.Under this situation, even the little insulation board of thermal coefficient of expansion engages with the upper surface of metallic plate, make the thermal deformation of metallic plate upper surface side be fettered by this insulation board, the thermal deformation that also can suppress the metallic plate lower face side is insulated the plate constraint.In addition, the thickness of described circuit board (a) is below the above 0.8mm of 0.2mm, and a/b≤1, and its thickness is thinned.Under this situation, engage little semiconductor chip of thermal coefficient of expansion and insulation board respectively by upper and lower surface at this circuit board, can the impartial thermal deformation that fetters this circuit board in zero deflection ground.
If, then flowing through the magnitude of current of described circuit board less than 0.2mm, reduces the thickness of described circuit board.In addition, if this thickness greater than 0.8mm, then the thermal deformation of the circuit board effect that is insulated the impartial constraint in plate zero deflection ground reduces relatively, the be full of cracks tempo of described first soldering-tin layer when thermal cycle increases.Therefore, though the thickness of circuit board is not defined,, then can improve joint reliability more if be 0.2～0.8mm.
If the thickness of described metallic plate is less than 0.6mm, then the thermal deformation of this metallic plate is except its upper surface side, and lower face side also is insulated the plate constraint, makes the be full of cracks tempo of described second soldering-tin layer when thermal cycle increase.And, if this thickness greater than 1.5mm, then make insulation board and circuit board distortion because of the thermal deformation of metallic plate, thereby the be full of cracks tempo of described first soldering-tin layer when thermal cycle increases.Therefore, though the thickness of metallic plate is not defined,, then can further improve joint reliability if be 0.6～1.5mm.
Exist the worry that reduces joint reliability.
First mode of the insulator chain substrate of band cooling sink section of the present invention possesses: described insulator chain substrate and be bonded on cooling sink section described metallic plate and the lower surface surface opposite side that is engaged in described insulation board via second soldering-tin layer, described second soldering-tin layer is formed by the scolding tin that with Sn is main component.
In the insulator chain substrate of this band cooling sink section, because described metallic plate and cooling sink section are by being that second soldering-tin layer of main component is engaged with Sn, so, thermal coefficient of expansion difference because of cooling sink section and insulation board, even produce at each joint interface under the situation of stress, also can absorb this stress, thereby can further improve the joint reliability of power module by described second soldering-tin layer.
It is that 35GPa is above, 0.2% yield strength is that 30MPa is above, hot strength is more than the 40MPa that described second soldering-tin layer is configured to Young's modulus.
Under this situation, when having the power module effect thermal cycle of insulator chain substrate of band cooling sink section, deformation is accumulated in a large number in described metallic plate, reduce and accumulate in the deformation quantity of this second soldering-tin layer, described substrate work hardening can be made, thereby be full of cracks etc. can be prevented from second soldering-tin layer, to produce.
And described second soldering-tin layer can be more than the 85wt% by Sn, Ag is more than the 0.5wt%, Cu is that the scolding tin that the above polynary system alloy of ternary more than the 0.1wt% is constituted forms.
Second mode of insulator chain substrate of the present invention possesses: insulation board, circuit board with side's surface engagement of described insulation board, with with the metallic plate of the opposing party's surface engagement of described insulation board, semiconductor chip is engaged in the surface of described circuit board, and cooling sink section is bonded on described metallic plate and the lower surface surface opposite side that is engaged in described insulation board, described circuit board and metallic plate are formed by pure Al or Al alloy, and the thickness of described circuit board (a) is below the above 0.8mm of 0.2mm, the thickness of described metallic plate (b) is below the above 1.5mm of 0.6mm, a/b≤1.
In this insulator chain substrate, because described circuit board and metallic plate are formed by pure Al or Al alloy, and the thickness of described circuit board (a) is below the above 0.8mm of 0.2mm, the thickness of described metallic plate (b) is below the above 1.5mm of 0.6mm, a/b≤1, so, do not need folder to establish heat conductivity lubricating oil, even reduce joint interface quantity, the power module that the total thermal resistance of formation stacked direction is lowered, by described metallic plate is directly engaged with described cooling sink section, also can make at the junction surface of described semiconductor chip and circuit board and stress that the junction surface of described metallic plate and cooling sink section produces relaxes.
Promptly, because the thickness (b) of described metallic plate is below the above 1.5mm of 0.6mm, and a/b≤1, its thickness is thickeied, so, even the upper surface at metallic plate engages the little insulation board of thermal coefficient of expansion, make the thermal deformation of metallic plate upper surface side be fettered by this insulation board, the thermal deformation that also can suppress the metallic plate lower face side is insulated the plate constraint.In addition, because the thickness (a) of described circuit board is below the above 0.8mm of 0.2mm, and a/b≤1, its thickness is thinned, so, engage little semiconductor chip of thermal coefficient of expansion and insulation board respectively by upper and lower surface at this circuit board, can the impartial thermal deformation that fetters this circuit board in zero deflection ground.
In sum, a kind of joint reliability that can not reduce between described each inscape that constitutes power module can be provided, the insulator chain substrate of the total thermal resistance of this power module stacked direction can be reduced.
Second mode of the insulator chain substrate of band cooling sink section of the present invention possesses: the insulator chain substrate of described second mode and be bonded on the cooling sink section of the lower surface of described metallic plate, semiconductor chip is bonded on the surface of described circuit board via first soldering-tin layer, described cooling sink section is formed by pure Al or Al alloy, and described metallic plate and described cooling sink section engage via second soldering-tin layer that with Sn is main component.
Insulator chain substrate according to this band cooling sink section, because described metallic plate and cooling sink section are by being that second soldering-tin layer of main component engages with Sn, so, because of the thermal coefficient of expansion of cooling sink section and insulation board different, even produced at joint interface under the situation of stress, also can absorb this stress, thereby can further improve the joint reliability of power module by described second soldering-tin layer.
The Third Way of the insulator chain substrate of band cooling sink section of the present invention comprises: possess insulation board, with the circuit board of side's surface engagement of described insulation board, with the insulator chain substrate of the metallic plate of the opposing party's surface engagement of described insulation board; Be arranged on cooling sink section described metallic plate and the lower surface surface opposite side that is engaged in described insulation board, semiconductor chip is bonded on the surface of described circuit board via first soldering-tin layer, described metallic plate and described cooling sink section by Young's modulus be more than the 35GPa, 0.2% yield strength is more than the 30MPa, hot strength is more than the 40MPa to be that second soldering-tin layer of main component is engaged with Sn.
In the insulator chain substrate of this band cooling sink section, metallic plate and cooling sink section directly engage via second soldering-tin layer, do not press from both sides and establish heat conductivity lubricating oil, and the joint interface quantity that the insulator chain substrate of band cooling sink section is had is reduced.Therefore, can reduce the power module that constitutes by bond semiconductor chip on described circuit board total thermal resistance at stacked direction.
Yet in this case, because the coefficient of thermal expansion differences of described insulation board and cooling sink section is big, so, might between described metallic plate and cooling sink section, produce big stress, make joint reliability reduce.
But, in this Third Way, because described metallic plate and cooling sink section engage by second soldering-tin layer that Young's modulus, 0.2% yield strength and hot strength are set as above-mentioned size respectively, so, thermal coefficient of expansion difference because of cooling sink section and insulation board, even produced at joint interface under the situation of stress, also can absorb this stress by described second soldering-tin layer.And, if the Young's modulus of described second soldering-tin layer etc. is set to above-mentioned size, then when thermal cycle acts on the insulator chain substrate of band cooling sink section, plastic deformation is accumulated in a large number in described metallic plate, reduce the plastic deformation amount of accumulating in this second soldering-tin layer, produce be full of cracks etc. in this second soldering-tin layer thereby can be suppressed at.
In sum, can not reduce the joint reliability between described each inscape that constitutes described power module, can reduce the total thermal resistance of this power module stacked direction.
Described second soldering-tin layer can be more than the 85wt% by Sn, Ag is more than the 0.5wt%, Cu is that the scolding tin that the above polynary system alloy of ternary more than the 0.1wt% is constituted forms.
Described cooling sink section can be formed by pure Al or Al alloy.
Described circuit board and metallic plate can be formed by pure Al or Al alloy, and the thickness of described circuit board (a) is below the above 0.8mm of 0.2mm, and the thickness of described metallic plate (b) is below the above 1.5mm of 0.6mm, and a/b≤1.
(invention effect)
According to the present invention, the joint reliability that can not reduce between each inscape can be provided, can reduce the insulator chain substrate and the insulator chain substrate of being with cooling sink section of the total thermal resistance of stacked direction.
Description of drawings
Fig. 1 is the overall diagram that the power module of the related insulator chain substrate of one embodiment of the present invention has been used in expression.
Among the figure: 10-power module, the insulator chain substrate of 10a-band cooling sink section, 11-insulation board, 12-circuit board, 13-metallic plate, 14-first soldering-tin layer, 15-second soldering-tin layer, 20-insulator chain substrate, 30-semiconductor chip, 31-cooling sink section.
Embodiment
With reference to the accompanying drawings, embodiments of the present invention are described.
The power module 10 of present embodiment possesses: insulator chain substrate 20, be arranged on described insulator chain substrate 20 side's face side semiconductor chip (heater) 30 and be arranged on the cooling sink section 31 of the opposing party's face side of insulator chain substrate 20.In other words, power module 10 possesses: the insulator chain substrate 10a and the semiconductor chip 30 of the band cooling sink section that is made of insulator chain substrate 20 and cooling sink section 31.
Insulator chain substrate 20 possesses insulation board 11, be bonded on described insulation board 11 side surface circuit board 12 and be bonded on the metallic plate 13 on the opposing party surface of insulation board 11.And semiconductor chip 30 is bonded on the surface of circuit board 12 via first soldering-tin layer 14.At metallic plate 13 and the lower surface surface opposite side that is bonded on insulation board 11, be provided with cooling sink section 31.
Here, be formed with the not shown plating Ni layer of thick about 2 μ m respectively on the surface of circuit board 12 and metallic plate 13, semiconductor chip 30 is via first soldering-tin layer 14 and the surface engagement that is formed with the circuit board 12 of this plating Ni layer, and, be formed with the circuit board 12 of plating Ni layer and each surface of metallic plate 13 and engage with insulation board 11 by welding.
In addition, at insulation board 11 by AlN, Si
3N
4Etc. nitride based pottery or Al
2O
3Form etc. oxide based pottery, under the situation that circuit board 12 and metallic plate 13 are formed by pure Al or Al alloy, especially be that Al alloy or pure Al more than 99.98% forms, metallic plate 13 is under the situation that the Al alloy below 99.90% forms more than 98.00% by purity by purity at circuit board 12, engage the scolder of insulation board 11 and circuit board 12 and metallic plate 13, be set at 1 or the scolder more than 2 kind from the scolder that Al-Si system, Al-Ge system, Al-Cu system, Al-Mg system or Al-Mn are, selected.
Cooling sink section 31 is formed by ceramic-metal composites such as metals such as pure Al, purity Al alloy, pure Cu or the Cu alloy more than 90% or AlSiC, and possesses: be provided with the main part 31a of metallic plate 13 on the surface and be formed with the casing 31c of the peristome that is communicated with inner space 31b on the surface.Here, preferred main part 31a is made of any one material in the ceramic-metal composites such as metal such as pure Al, Al alloy, pure Cu or Cu alloy or AlSiC on making, but also can form the complex of multiple material stacked.For example, can adopt the part of the inner space 31b side that makes main part 31a is pure Al, and the complex of pure Cu plate is set in the part of metallic plate 13 sides.Under this situation, because pure Cu plate has the thermal coefficient of expansion of centre of the thermal coefficient of expansion of the thermal coefficient of expansion of above-mentioned pure Al and AlN (insulation board 11), so it brings into play function as the stress buffer member.At main part 31a and lower surface described surface opposite side, separate predetermined distance along its length direction (left and right directions of Fig. 1 paper) and be formed with a plurality of cooling fin 31d that extend and extend along the Width (paper at Fig. 1 is the depth direction) of this main part 31a downwards.In addition, from viewpoints such as heat transmission and processabilities, preferred main part 31a adopts pure Al or Al alloy, the preferred especially alloy of purity more than 98% in the Al alloy.
This cooling sink section 31 under the outstanding state of the inner space of casing 31c 31b, constitutes the structure of described peristome of the inaccessible casing 31c of described lower surface of main part 31a at the cooling fin 31d of main part 31a.And, between the circumference of the described peristome on the surface of the described lower surface of main part 31a and casing 31c, folder is not established heat conduction lubricating oil, forms the direct contacting structure of circumference of described peristome on the surface of the described lower surface of main part 31a and casing 31c.
And, this by the described inner space 31b of obturation in, be provided with the not shown refrigerant cycle mechanism that supplies with and reclaim cold-producing mediums such as cooling fluid or cooling air, by this mechanism, described cold-producing medium contacts with the described lower surface of main part 31a and the whole zone of cooling fin 31d.
That is, utilize the cold-producing medium that supplies to described inner space 31b, reclaim the heat that is delivered to cooling sink section 31 from semiconductor chip 30, make thus from the heat of semiconductor chip 30 and dispel the heat from power module 10.In addition, the heat transfer coefficient of the main part 31a of preferred cooling sink section 31 is set at about 6000W/ ℃ m
2～about 15000W/ ℃ m
2
And, in the present embodiment, metallic plate 13 and main part 31a by Young's modulus be more than the 35GPa, 0.2% yield strength is more than the 30MPa, hot strength is more than the 40MPa to be that second soldering-tin layer 15 of main component engages with Sn.On the mutual opposed surface of metallic plate 13 and main part 31a, be formed with not shown plating Ni layer (in the metallic plate 13 among the about 2 μ m of thickness, the main part 31a the about 5 μ m of thickness), these respectively plate the Ni layer and engage with second soldering-tin layer 15.In illustrated embodiment, the approximate whole zone of metallic plate 13 lower surfaces is engaged by second soldering-tin layer 15.And, second soldering-tin layer 15 preferably by by Sn be more than the 85wt%, Ag is more than the 0.5wt%, Cu is that the scolding tin that the polynary system alloy more than the ternary more than the 0.1wt% constitutes forms.The amount of described Sn, Ag, Cu is Ag:2～6wt%, Cu:0.3～4wt%, Sn more preferably: remaining ratio.
In addition, though the material of first soldering-tin layer 14 is not particularly limited, preferably form by the scolding tin that with Sn is main component.
Longitudinal and transverse and the thickness of insulation board 11 is unqualified, but for example can set for vertical for 10mm～100mm, horizontal for 10mm～100mm, thickness be 0.2mm～1.0mm.Longitudinal and transverse and the thickness of circuit board 12 is unqualified, but for example preferably set become to indulge for 10mm～100mm, horizontal for 10mm～100mm, thickness be below the above 0.8mm of 0.2mm.Longitudinal and transverse and the thickness of metallic plate 13 is unqualified, but for example preferably set become to indulge for 10mm～100mm, horizontal for 10mm～100mm, thickness be below the above 1.5mm of 0.6mm.When such power module 10 used in-40 ℃～105 ℃ temperature range, the thickness of preferred first soldering-tin layer 14 and second soldering-tin layer 15 was 0.05mm～0.5mm.
In addition, in above-mentioned number range, the thickness of circuit board 12 is less than the thickness of metallic plate 13, is that the thickness of a, metallic plate 13 is b if establish the thickness of circuit board 12, then preferably satisfies the relation of a/b≤1.
According to the power module 10 of present embodiment, circuit board 12 is formed by the Al alloy or the pure Al of purity more than 99.98%, metallic plate 13 by purity more than 98.00% the Al alloy below 99.90% form.Therefore, by metallic plate 13 is directly joined to the main part 31a of cooling sink section 31 via second soldering-tin layer 15, can not press from both sides and establish heat conductivity lubricating oil, and reduce the quantity of joint interface, even form the power module 10 that the total thermal resistance of stacked direction reduces, also can suppress to produce in first, second soldering-tin layer 14,15 and the development be full of cracks.
Promptly, ifs circuit plate 12 is formed by the Al alloy or the pure Al of purity more than 99.98%, then when thermal cycle acts on power module 10, big deformation is accumulated in circuit board 12, suppress to accumulate, in this first soldering-tin layer 14, produce and development thereby can suppress be full of cracks in the deformation quantity of first soldering-tin layer 14.
In addition, if metallic plate 13 by purity more than 98.00% the Al alloy below 99.90% form, then when thermal cycle acts on power module 10, by accumulating in the deformation of metallic plate 13, can make this metallic plate 13 work hardening, thereby can reduce the contribution degree that insulation board 11 occupies in the thermal deformation movement of these insulator chain substrate 20 integral body, can increase the contribution degree of metallic plate 13 on the other hand.Therefore, the thermal coefficient of expansion of these insulator chain substrate 20 integral body increases in appearance, reduces with the difference of the thermal coefficient of expansion of cooling sink section 31.Thus, the deformation quantity of accumulating in second soldering-tin layer 15 is reduced, produce in this second soldering-tin layer 15 and the development be full of cracks thereby can be suppressed at.
By said method, a kind of joint reliability that can not reduce between described each inscape that constitutes power module 10 can be provided, and can reduce the insulator chain substrate 20 of the total thermal resistance of these power module 10 stacked directions.
And, in the present embodiment, because the thickness of circuit board 12 and metallic plate 13 is set at above-mentioned scope, so, can relax the stress that in first, second soldering-tin layer 14,15, produces.
Promptly, thickness (b) at metallic plate 13 is below the above 1.5mm of 0.6mm, and a/b≤1, under the situation that its thickness is thickeied, the insulation board 11 that thermal coefficient of expansion is little can join the upper surface of metallic plate 13 to, even the thermal deformation of metallic plate 13 upper surface side is subjected to the constraint of this insulation board 11, the thermal deformation that also can suppress metallic plate 13 lower face side is insulated plate 11 constraints.
And, thickness (a) at circuit board 12 is below the above 0.8mm of 0.2mm, and a/b≤1, under the situation of its reduced thickness, be engaged in the upper and lower surface of this circuit board 12 respectively by semiconductor chip that thermal coefficient of expansion is little 30 and insulation board 11, thermal deformation that can this circuit board 12 of the impartial constraint in zero deflection ground.
Here, the thickness of ifs circuit plate 12 is less than 0.2mm, and the magnitude of current that then flows through described circuit board 12 reduces.In addition, if its thickness greater than 0.8mm, then the effect of the thermal deformation by the impartial bound circuit plate 12 in insulation board 11 zero deflections ground reduces relatively, the be full of cracks tempo when making the thermal cycle in the soldering-tin layer 14 of winning increases.Therefore, though the thickness of circuit board is not limited,, then can improve joint reliability more if be 0.2～0.8mm.
If the thickness of metallic plate 13 is less than 0.6mm, then the thermal deformation of this metallic plate 13 is except its upper surface side, and lower face side also is insulated plate 11 constraints, and the be full of cracks tempo when making thermal cycle in second soldering-tin layer 15 increases.In addition, if this thickness greater than 1.5mm, then utilizes the thermal deformation of metallic plate 13 to make 12 distortion of insulation board 11 and circuit board, thus, the be full of cracks tempo during thermal cycle in first soldering-tin layer 14 increases.Therefore, though the thickness of metallic plate is not defined,, then can improve joint reliability more if be 0.6～1.5mm.
And, in the present embodiment, because metallic plate 13 and cooling sink section 31 (main part 31a) are by with Sn being second soldering-tin layer, 15 joints of main component, so, even produced at joint interface under the situation of stress, because cooling sink section 31 (main part 31a) is different with the thermal coefficient of expansion of insulation board 11, so also can absorb this stress by second soldering-tin layer 15.Therefore, can further improve the joint reliability of power module 10.
And, Young's modulus, 0.2% yield strength and hot strength at second soldering-tin layer 15 are set under the situation of above-mentioned size, when thermal cycle acts on power module 10, deformation is accumulated in a large number in metallic plate 13, be reduced in the deformation quantity of accumulating in this second soldering-tin layer 15.Therefore, metallic plate 13 work hardening not only can be made, be full of cracks etc. can also be prevented from second soldering-tin layer 15, to produce.
Embodiment
(first confirmatory experiment)
Here, in above action effect, by purity more than 99.98% the Al alloy or pure Al form circuit board 12, by purity more than 98.00% the Al alloy below 99.90% form metallic plate 13, produce and the situation of development thereby can prevent to chap in first, second soldering-tin layer 14,15, carried out by experiment verifying (below be called " first confirmatory experiment ").
As the insulator chain substrate of the band cooling sink section that this experiment is provided, adopted following formation.
Insulation board 11 is formed by the material that with AlN is main component, and its longitudinal and transverse and thickness is respectively 50mm, 50mm and 0.635mm.Circuit board 12 is formed by the Al alloy, and its longitudinal and transverse and thickness is respectively 48mm, 48mm and 0.4mm.Metallic plate 13 is formed by the Al alloy, and its longitudinal and transverse and thickness is respectively 48mm, 48mm and 0.6mm.Cooling sink section 31 is formed by the Al alloy that AA (Alminum Association) 6063 is, the longitudinal and transverse and thickness of its main part 31a is respectively 100mm, 100mm and 3mm.Thickness (size of the left and right directions of the paper of Fig. 1), length (size of the above-below direction of the paper of Fig. 1) and the spacing of cooling fin 31d are respectively 1mm, 8mm and 3mm.Second soldering-tin layer 15 is made of Sn-3.5%Ag-0.75%Cu, and its thickness is 0.3mm.
In above formation, the insulator chain substrate of formed band cooling sink section, its Al purity that forms each Al alloy of circuit board 12 and metallic plate 13 is respectively different 36 kinds.Below, with the purity that wherein forms the Al alloy of circuit board 12 be more than 99.98% and the purity of the Al alloy of formation metallic plate 13 is that the formation below 99.90% is called first embodiment more than 98.00%, formation in addition is called first comparative example.
In addition, the joint that the main part 31a of metallic plate 13 and cooling sink section 31 is undertaken by second soldering-tin layer 15, in advance on the surface of the main part 31a of the cooling sink section that has engaged metallic plate 13 and the surface of metallic plate 13, cover the described plating Ni layer of formation by electroless plating, then, under being 300 ℃ reducing atmosphere, temperature implements.And, when this engages, utilize the soldering tin material identical simultaneously with second soldering-tin layer 15, the heating chip that has adopted longitudinal and transverse and thickness to be respectively the AlN of 10mm, 10mm and 0.3mm is engaged with circuit board 12.Can adopt this heating chip alternative semiconductors chip 30 (below this formation being called " power module ") when the enforcement of this demonstration test.And circuit board 12 and metallic plate 13 and insulation board 11 adopt Al-Si weldering paper tinsel to carry out vacuum welding in advance.In addition, when this welding, each surface that overlays on circuit board 12 and metallic plate 13 by electroless plating has formed the plating Ni layer of thickness 2 μ m in advance.
Above each power module is separately positioned under the liquid phase atmosphere that is made of fluorine series solvent, described each power module given will make this atmosphere temperature rise to 105 ℃ from-40 ℃ with 10 minutes, with 10 minutes from 105 ℃ of temperature histories that are reduced to-40 ℃ as the temperature cycles of a circulation.Then, will compare the thermal cycle number when having confirmed the rising more than 10%, be determined as the thermal cycle life of this power module with this thermoelectric resistance before giving (below be called " initial thermoelectric resistance ").Here, in the junction surface of first, second soldering-tin layer 14,15 etc. etc., produce and when having developed be full of cracks, thermoelectric resistance can rise.The mensuration of this thermal cycle life is implemented through 500 once thermoelectric resistances of circulation mensuration by every.
In addition, thermoelectric resistance is measured by following method.In the 31b of the inner space of cooling sink section 31, make the cooling water circulation of 50 ℃ of water temperatures, the outer surface that cools off fin 31d is remained uniform temperature.Under this state, electric power from 100W to heating chip that supply with makes its heating.The temperature of this heating chip reach certain after, according to the temperature (Th) of this heating chip and the temperature (50 ℃) of cooling water, by HR=(Th-50)/100 (℃/W) calculated thermoelectric resistance (HR).Here, the TCR (Temperature Coefficient of Resistance) of heating chip temperature (Th) by measuring heating chip in advance, obtain poor (the Δ R) of resistance value of heating chip before and after the heating, and according to Th=Δ R/TCR+Tr (℃) calculate (Tr is a room temperature).
As conventional example, the heating chip identical, insulation board 11, circuit board 12, metallic plate 13 and cooling sink section 31 have been adopted with described power module, and, adopted and between metallic plate 13 and cooling sink section 31, set the structure that longitudinal and transverse and thickness is respectively the heating panel that is made of the CuMo alloy of 70mm, 70mm and 3mm.In addition, the formation of this conventional example, at first, engage heating chip and circuit board 12 by the Pb50%Sn soldering tin material, and engaged described heating panel and metallic plate 13 adopting after Al-Si weldering paper tinsel carried out vacuum welding to circuit board 12 and metallic plate 13 and insulation board 11.And then, make described heating panel and cooling sink section 31 bondings via the silicon grease layer of the about 0.15mm of thickness.In addition, with described first embodiment and first comparative example fully similarly, also formed plating Ni layer on each surface of circuit board 12 grades.
The result can confirm, with respect to the initial thermoelectric resistance of conventional example be 0.72 (℃/W), the initial thermoelectric resistance of first embodiment be 0.28 (℃/W)～0.30 (℃/W), can be more half as large than conventional example.And, as shown in table 1, can confirm to be below 3000 at thermal cycle life described in described first comparative example relatively, in first embodiment greater than 3500.
To sum up can confirm, purity at the Al alloy that forms circuit board 12 is more than 99.98%, and the purity that forms the Al alloy of metallic plate 13 is more than 98.00% in the power module below 99.90% 10, can not reduce the joint reliability between each inscape 12 grade, can reduce the total thermal resistance of stacked direction.
[table 1]
(second confirmatory experiment)
Then, utilize and to verify: by with the thickness setting of the thickness of metallic plate 13 and circuit board 12 in above-mentioned scope, can relax because of stress that thermal cycle produces in first, second soldering-tin layer 14,15 (below be called " second confirmatory experiment ").
As the power module that is used for this experiment, employing forms circuit board 12 except the Al alloy by purity 99.99%, and the Al alloy by purity 99.50% forms metallic plate 13, outside the thickness of circuit board 12 and metallic plate 13 the having nothing in common with each other in the scope of 0.2mm～1.5mm, the 49 kind formations same with the power module that adopts in above-mentioned first confirmatory experiment.Below, be below the above 0.8mm of 0.2mm with the thickness (a) of circuit board 12, the thickness of metallic plate 13 (b) is below the above 1.5mm of 0.6mm, and the formation of a/b≤1 is called second embodiment, formation in addition is called second comparative example.
Similarly give temperature cycles with above-mentioned first confirmatory experiment respectively to each above power module, measured thermal cycle life.
The result can confirm, and is also same with above-mentioned first embodiment in a second embodiment, initial thermoelectric resistance be 0.28 (℃/W)～0.30 (℃/W), compare with the conventional example shown in above-mentioned first confirmatory experiment, can reduce half.And, as shown in table 2, can confirm that with respect to above-mentioned thermal cycle life in second comparative example be below 3000, in a second embodiment greater than 3500.
To sum up can confirm, thickness (a) at circuit board 12 is below the above 0.8mm of 0.2mm, the thickness of metallic plate 13 (b) is below the above 1.5mm of 0.6mm, in the power module 10 of a/b≤1, can not reduce the joint reliability between each inscape 12 grade, can reduce the total thermal resistance of stacked direction.
[table 2]
(the 3rd confirmatory experiment)
Then, utilization is verified by Young's modulus, 0.2% yield strength and hot strength with second soldering-tin layer 15 and is set at above-mentioned size respectively, can prevent to produce in second soldering-tin layer 15 be full of cracks etc.
As the power module that is used for this experiment, the Al alloy of having prepared to remove by purity 99.99% forms circuit board 12, and the Al alloy by purity 99.50% forms metallic plate 13, outside the material of second soldering-tin layer 15 has nothing in common with each other, the 10 kind formations same with the power module that is adopted in above-mentioned first confirmatory experiment.
Below, with the material of second soldering-tin layer 15 be by Sn is more than the 85wt%, Ag is more than the 0.5wt%, Cu is the scolding tin that the polynary system alloy constitutes more than 3 yuan more than the 0.1wt% situation as the 3rd embodiment, with in addition situation as second comparative example.
Similarly give temperature cycles with above-mentioned first confirmatory experiment respectively to each above power module, measured thermal cycle life.
The result can confirm, also same in the 3rd embodiment shown in the table 3 (embodiment 1～5) with above-mentioned first, second embodiment, initial thermoelectric resistance be 0.28 (℃/W)～0.30 (℃/W), compare with the conventional example shown in above-mentioned first confirmatory experiment (0.72 (℃/W)), can reduce half.And, as shown in table 3, be below 3000 with respect to above-mentioned thermal cycle life in the 3rd comparative example (comparative example 1～4), in the 3rd embodiment,, can keep comparably with above-mentioned conventional example greater than 3500.
To sum up can confirm, a kind of joint reliability that can not reduce between each inscape 12 grade can be provided, can reduce the power module of the total thermal resistance of stacked direction.
[table 3]
| Second scolding tin (wt%) | Initial thermal resistance (℃/W) | Young's modulus (GPa) | 0.2% yield strength (MPa) | Hot strength (MPa) | Thermal cycle life (period) | |
| Embodiment 1 | Sn-3.5Ag-0.75Cu | 0.281 | 45 | 38 | 53 | ＞3500 |
| Embodiment 2 | Sn-4.7Ag-1.2Cu | 0.290 | 50 | 57 | 62 | ＞3500 |
| Embodiment 3 | Sn-3.5Ag-0.75Cu-0.01Ge | 0.288 | 45 | 40 | 55 | ＞3500 |
| Embodiment 4 | Sn-4.7Ag-1.2Cu-0.01Ge | 0.279 | 51 | 58 | 64 | ＞3500 |
| Embodiment 5 | Sn-3.2Ag-2.8Bi-0.7Cu-0.01Ge | 0.294 | 52 | 69 | 85 | ＞3500 |
| Comparative example 1 | Sn-0.75Cu | 0.296 | 34 | 22 | 32 | 1500 |
| Comparative example 2 | Sn-0.7Cu-0.06Ni | 0.280 | 30 | 13 | 30 | 1000 |
| Comparative example 3 | Pb-10Sn | 0.293 | 19 | 46 | 40 | 2000 |
| Comparative example 4 | Pb-50Sn | 0.286 | 26 | - | 53 | 2500 |
| Conventional example | Pb-50Sn | 0.720 | 26 | - | 53 | ＞3500 |
In addition, technical scope of the present invention is not limited to above-mentioned execution mode, can apply various changes in the scope that does not break away from purport of the present invention.For example, also can make described cooling sink section 31 possess the stress buffer member that Cu by the thermal coefficient of expansion of the centre of the thermal coefficient of expansion of the main part 31a of thermal coefficient of expansion with insulation board 11 and cooling sink section 31 etc. constitutes, and described stress buffer member is provided between metallic plate 13 and the cooling sink section 31, and, can also substitute the deformation absorption component that this stress buffer member setting is made of the pure Al of purity more than 99%.
And, in the above-described embodiment, for example understand the constituting of main part 31a integral body that forms cooling sink section 31 by pure Al or Al alloy, but also can be the multi-ply construction that only forms the face side that metallic plate 13 is set by pure Al or Al alloy.
In addition, can be by the main part 31a of solder joints metallic plate 13 and cooling sink section 31.
(industrial utilizability)
The invention provides a kind of joint reliability that can not reduce between each inscape, can reduce stacked direction the total thermal resistance insulation circuit board and with the insulation circuit board of cooling sink section.
Claims (11)
1, a kind of insulator chain substrate is characterized in that possessing: insulation board, with the circuit board of side's surface engagement of described insulation board and with the metallic plate of the opposing party's surface engagement of described insulation board,
Semiconductor chip is bonded on the surface of described circuit board via first soldering-tin layer, and,
Cooling sink section is bonded on described metallic plate and the lower surface surface opposite side that is engaged in described insulation board via second soldering-tin layer,
Described circuit board is formed by the Al alloy or the pure Al of purity more than 99.98%,
Described metallic plate by purity more than 98.00% the Al alloy below 99.90% form.
2, insulator chain substrate according to claim 1 is characterized in that,
The thickness a of described circuit board is made as below the above 0.8mm of 0.2mm, and,
The thickness b of described metallic plate is made as below the above 1.5mm of 0.6mm, and a/b≤1.
3, a kind of insulator chain substrate with cooling sink section is characterized in that possessing:
The described insulator chain substrate of claim 1; With
Be bonded on cooling sink section described metallic plate and the lower surface surface opposite side that is engaged in described insulation board via second soldering-tin layer,
Described second soldering-tin layer is formed by the scolding tin that with Sn is main component.
4, the insulator chain substrate of band cooling sink section according to claim 3 is characterized in that,
It is that 35GPa is above, 0.2% yield strength is that 30MPa is above, hot strength is more than the 40MPa that described second soldering-tin layer is configured to Young's modulus.
5, the insulator chain substrate of band cooling sink section according to claim 4 is characterized in that,
Described second soldering-tin layer by Sn be more than the 85wt%, Ag is more than the 0.5wt%, Cu is that the scolding tin that the polynary system alloy more than the ternary more than the 0.1wt% is constituted forms.
6, a kind of insulator chain substrate is characterized in that possessing: insulation board, with the circuit board of side's surface engagement of described insulation board and with the metallic plate of the opposing party's surface engagement of described insulation board,
Semiconductor chip is engaged in the surface of described circuit board, and,
Cooling sink section is bonded on described metallic plate and the lower surface surface opposite side that is engaged in described insulation board,
Described circuit board and metallic plate are formed by pure Al or Al alloy, and,
The thickness a of described circuit board is below the above 0.8mm of 0.2mm,
The thickness b of described metallic plate is below the above 1.5mm of 0.6mm, and a/b≤1.
7, a kind of insulator chain substrate with cooling sink section is characterized in that possessing:
The described insulator chain substrate of claim 6; With
Be bonded on the cooling sink section of the lower surface of described metallic plate,
Semiconductor chip is bonded on the surface of described circuit board via first soldering-tin layer,
Described cooling sink section is formed by pure Al or Al alloy,
Described metallic plate and described cooling sink section engage via second soldering-tin layer that with Sn is main component.
8, a kind of insulator chain substrate with cooling sink section is characterized in that, comprising:
Possess insulation board, with the circuit board of side's surface engagement of described insulation board, with the insulator chain substrate of the metallic plate of the opposing party's surface engagement of described insulation board; With
Be arranged on cooling sink section described metallic plate and the lower surface surface opposite side that is engaged in described insulation board,
Semiconductor chip is bonded on the surface of described circuit board via first soldering-tin layer,
Described metallic plate and described cooling sink section by Young's modulus be more than the 35GPa, 0.2% yield strength is more than the 30MPa, hot strength is more than the 40MPa to be that second soldering-tin layer of main component is engaged with Sn.
9, the insulator chain substrate of band cooling sink section according to claim 8 is characterized in that,
Described second soldering-tin layer by Sn be more than the 85wt%, Ag is more than the 0.5wt%, Cu is that the scolding tin that the polynary system alloy more than the ternary more than the 0.1wt% is constituted forms.
10, the insulator chain substrate of band cooling sink section according to claim 8 is characterized in that,
Described cooling sink section is formed by pure Al or Al alloy.
11, the insulator chain substrate of band cooling sink section according to claim 8 is characterized in that,
Described circuit board and metallic plate are formed by pure Al or Al alloy, and,
The thickness a of described circuit board is below the above 0.8mm of 0.2mm,
The thickness b of described metallic plate is below the above 1.5mm of 0.6mm, and a/b≤1.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| JP268094/2005 | 2005-09-15 | ||
| JP268095/2005 | 2005-09-15 | ||
| JP2005268093A JP2007081200A (en) | 2005-09-15 | 2005-09-15 | Insulated circuit board with cooling sink section |
| JP268093/2005 | 2005-09-15 |
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| CN101061580A true CN101061580A (en) | 2007-10-24 |
| CN100481412C CN100481412C (en) | 2009-04-22 |
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| CN100481412C (en) | 2009-04-22 |
| JP2007081200A (en) | 2007-03-29 |
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