CN101051529B - Method of measuring a channel boosting voltage in a NAND flash memory device - Google Patents
Method of measuring a channel boosting voltage in a NAND flash memory device Download PDFInfo
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- CN101051529B CN101051529B CN200710090410XA CN200710090410A CN101051529B CN 101051529 B CN101051529 B CN 101051529B CN 200710090410X A CN200710090410X A CN 200710090410XA CN 200710090410 A CN200710090410 A CN 200710090410A CN 101051529 B CN101051529 B CN 101051529B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
In a method of measuring a channel boosting voltage, a threshold voltage of a pass disturbance is measured in accordance with change of a pass voltage applied to a selected cell under the condition that the pass voltage having a certain level is provided to a cell not selected of erased cells. Subsequently, a threshold voltage of a program disturbance is measured in accordance with change of the pass voltage applied to the cell not selected under the condition that a program voltage having a certain level is provided to a cell selected of the erased cells. Then, the channel boosting voltage is measured by using a pass bias voltage applied when the threshold voltage of the pass disturbance is identical to that of the program disturbance. As a result, the channel boosting voltage is accurately monitored when a program operation is performed. Accordingly, a program disturbance characteristic may be easily detected, and also yield and fail may be easily analyzed.
Description
The cross reference of related application
The application requires the right of priority of korean patent application No.2006-31445 that submitted on April 6th, 2006 and the korean patent application No.2007-27645 that submitted on March 21st, 2007, and its content whole is incorporated herein by reference.
Technical field
The present invention relates to the nand flash memory device.More specifically, the present invention relates to a kind of method of measuring channel boosting voltage, described method is used to estimate the programming interference characteristic of nand flash memory device.
Background technology
The nand flash memory device comprises a plurality of cell blocks.
Cell block has: unit strings 101 and 102, and a plurality of units in series that wherein are used to store data connect; Transistor 110 is selected in drain electrode, and it is connected between unit strings 101,102 and the bit line BL; And drain selection transistor 120, it is connected between unit strings 101,102 and the common source line CSL.Here, unit strings 101 is identical with the number of bit line BL with 102 number.Therefore, drain electrode selects each the number in transistor 110 and the drain selection transistor 120 identical with the number of unit strings 101 and 102.
The grid that first bias voltage is applied to the unit by word line WL is so that operating unit, and second bias voltage is provided for the drain electrode that transistor 110 is selected in drain electrode by bit line BL.In addition, the 3rd bias voltage is applied to the source electrode of drain selection transistor 120 by common source line CSL.
On the other hand, in the unit of nand flash memory device, wherein tunnel oxide film, floating grid, dielectric film and the control grid tegillum grid of pressing is formed on the given area in the zone of semiconductor chip.In addition, the junction surface is formed in the first of semiconductor chip.Here, this first corresponding to the grid both sides than lower part.
In order to programme or erase unit, above-mentioned nand flash memory device uses the FN tunnelling to inject electronics in the floating grid of unit, perhaps uses the FN tunnelling to discharge electronics from floating grid.Here, the unit execution of piece is wiped, and selected cell is carried out programming.
For the selected cell M11 in the nand flash memory device is programmed, approximately the program voltage of 18V is applied to the word line Selected WL of selection, and approximately the transfer overvoltage (passvoltage) of 8V is provided for non-selected word line PassWL.Further, ground voltage Vss is applied to the bit line Selected BL of selection, and power source voltage Vcc is applied to non-selected bit line Unselected BL.Here, power source voltage Vcc is applied to drain electrode selection wire DSL, and ground voltage Vss is provided for drain selection line SSL.In addition, power source voltage Vcc is applied to common source line CSL, and ground voltage Vss is provided for trap (body).
In this case, program voltage is applied to the control grid of the unit M14 relevant with non-selected bit line Unselected BL.Yet, passage with and program voltage, transfer overvoltage and the pre-charge voltage that provides from bit line BL between the corresponding voltage speed of coupling boosted.
The voltage that the passage that boosts has, that is channel boosting voltage have prevented the FN tunnelling of the unit relevant with non-selected bit line Unselected BL, thereby have prevented the programming interference.
On the other hand, the unit that is applied to of transfer overvoltage may be programmed.This is called as transmission and disturbs.Here, described unit is in the unit relevant with the bit line Selected BL that selects one.
In Fig. 1, unit M11 is will programmed unit, and unit M12 and M13 transmit interference units, and unit M14 is the programming interference units.
For Products Development, importantly guarantee the programming interference characteristic in the nand flash memory device.
Select the factor of number or the like of transistorized threshold voltage, leakage current GIDL (passage leakage current), passage electric capacity, programming time, programming NOP influential to the programming interference characteristic such as program voltage, transfer overvoltage, drain electrode.
In addition, channel boosting voltage depends on described factor and is determined.Therefore, can under the situation of having measured channel boosting voltage, estimate the programming interference characteristic.
Yet, in routine techniques, do not have the method for measuring channel boosting voltage.This is that it becomes ground state from quick condition, so channel boosting voltage changes according to the state of changing because be examined (or survey) so that when measuring channel boosting voltage when passage.
That is, since at linking probe point so that measure under the situation of channel boosting voltage, channel boosting voltage is discharged by probe, so that channel boosting voltage does not have is measured, up to find the fault position in product till.Particularly, empirical tests has only when finding the fault position in product, the unit that just exists channel boosting voltage wherein to be reduced by certain leakage current in the nand flash memory device.Therefore, the timely optimization of implementation procedure.
So prior art is measured channel boosting voltage by emulation, therefore be difficult to predict the channel boosting voltage that is changed by the leakage current of passage.
Summary of the invention
A feature of the present invention provides a kind of method of measuring channel boosting voltage.Particularly, be provided under the condition of the non-selected unit in the erase unit, measure according to the variation of the transfer overvoltage that is applied to selected cell and transmit the threshold voltage that disturbs in transfer overvoltage with constant level.Subsequently, be provided under the condition of the selected cell in the erase unit, measure the threshold voltage that programming is disturbed according to the variation of the transfer overvoltage that is applied to non-selected unit at program voltage with constant level.Then, by using the transmission bias voltage that when the threshold voltage that transmits the threshold voltage that disturbs and the interference of programming is identical, is applied, measure channel boosting voltage.As a result, when carrying out programming operation, channel boosting voltage is accurately monitored.Therefore, the programming interference characteristic can be easily detected, and yield and fault can be easily analyzed equally.
Method according to the channel boosting voltage in a kind of measuring N AND flush memory device of an example of the present invention embodiment comprises: the transmission bias voltage that will have a constant level is applied to the non-selected unit in the erase unit, and measures the first threshold voltage of the selected cell in the erase unit according to first level that transmits bias voltage that is applied to selected cell; Program bias is applied to selected cell in the erase unit, and measures second threshold voltage of selected cell according to second level that transmits bias voltage that is applied to the non-selected unit in the erase unit; Detect when second measured second threshold voltage when transmitting bias voltage and being applied in, and detect the level of the first transmission bias voltage that when first threshold voltage is identical with second threshold voltage, is applied with level identical with the transmission bias voltage that applied in the programming operation; And by using first level that transmits bias voltage that detects to measure channel boosting voltage.
The step that detects first threshold voltage comprises: carry out erase operation about each storage unit; The transmission bias voltage that will have constant level is applied to non-selected unit, and the first transmission bias voltage is applied to selected cell; Measure first threshold voltage; And the level that changes the first transmission bias voltage.Here, the step of carrying out, apply, measuring and change is repeatedly carried out, up to first level that transmits bias voltage with till target level is identical.In this case, first threshold voltage is the threshold voltage of selected cell.
The step of measuring second threshold voltage comprises: carry out erase operation about each storage unit; The program bias that will have constant level is applied to selected cell, and the second transmission bias voltage is applied to non-selected unit; Measure second threshold voltage; And the level that changes the first transmission bias voltage.Here, the step of carrying out, apply, measuring and change is repeatedly carried out, up to second level that transmits bias voltage with till target level is identical.In this case, second threshold voltage is the threshold voltage of selected cell.
The first transmission bias voltage and second transmits bias voltage and is applied in the time of about 30 μ s to about 40 μ s, and changes in the scope of about 1.5V and about 14.5V.
Program bias has about 21V.
This method further is included in carries out the threshold voltage that erase operation is measured storage unit afterwards.
Channel boosting voltage equals the first transmission bias voltage that program voltage deducts detection.
As mentioned above, in the method for measuring channel boosting voltage, be provided under the condition of the non-selected unit in the erase unit, measure according to the variation of the transfer overvoltage that is applied to selected cell and transmit the threshold voltage that disturbs in transfer overvoltage with certain level.Subsequently, be provided under the condition of the selected cell in the erase unit, measure the threshold voltage that programming is disturbed according to the variation of the transfer overvoltage that is applied to non-selected unit at program voltage with certain level.Then, by using the transmission bias voltage that when the threshold voltage that transmits the threshold voltage that disturbs and the interference of programming is identical, is applied, measure channel boosting voltage.As a result, when carrying out programming operation, channel boosting voltage is accurately monitored.Therefore, the programming interference characteristic can be easily detected, and yield and fault can be easily analyzed equally.
In addition, when test products, therefore can be accurately and verify in early days and the process of expection fault can reduce required time of development and expense.
Further, can improve yield, because the process of expection fault just obtained checking before the test of product.In addition, sifted out before test owing to have the product of fault, so can reduce testing expense.
Description of drawings
Fig. 1 is the view of the diagram circuit relevant with the universal method of being programmed in the unit in the nand flash memory device;
Fig. 2 is the process flow diagram of diagram according to the method for the channel boosting voltage of the measuring N AND flush memory device of an example of the present invention embodiment;
Fig. 3 is the view of the diagram circuit relevant with the method for the threshold voltage that transmits interference according to the measurement in the method for the measurement channel boosting voltage of an example of the present invention embodiment;
Fig. 4 is a diagram and view according to the relevant circuit of the method for the threshold voltage of the programming of the measurement in the method for the measurement channel boosting voltage of an example of the present invention embodiment interference; And
Fig. 5 is diagram and the view that disturbs the curve relevant with the variations in threshold voltage of programming interference according to transmission.
Embodiment
Fig. 2 is the process flow diagram of method of the channel boosting voltage of diagram measuring N AND flush memory device according to an embodiment of the invention.
With reference to figure 2, the method for measuring channel boosting voltage comprises transmitting step S211 that step S201 that the threshold voltage that disturbs measures measures to S209, to the threshold voltage of programming interference to S219 and step S221 and S223 that channel boosting voltage is measured.
Hereinafter, will describe these steps S201 with reference to the accompanying drawings in detail to S223.
The process that the threshold voltage that transmit to disturb is measured
Fig. 3 is the view of the diagram circuit relevant with the method for the threshold voltage that transmits interference according to the measurement in the method for the measurement channel boosting voltage of an example of the present invention embodiment.
Referring to figs. 2 and 3, in step S201, carry out erase operation about storage unit, measure the threshold voltage of eraseable memory unit then.
In step S203, for example the ground voltage of 0V is applied to bit line BL, and has the transmission bias voltage of the constant level of 8.5V for example and be provided for non-selected unit among those unit in the unit strings.In addition, first transmit the selected cell of bias voltage among the low level of for example 1.5V is applied to those unit the unit strings.
In step S205, after for example 50 μ s or the time-out that is used for common programming operation (commonprogram operation) still less go, measure the first threshold voltage of selected cell.
In step S207, determine that first transmits bias voltage and whether increased to and measure the voltage (being called as " first voltage " hereinafter) that transmits the required for example 14.5V of the first threshold voltage that disturbs.
In step S209, transmit bias voltage first and do not increase under first voltage condition, adjust the level of the first transmission bias voltage.Particularly, increase the level of the first transmission bias voltage with the step size increments of a voltage between 0.1V and the 2.0V.Subsequently, execution in step S201 in step S203, is applied to selected cell with the first transmission bias voltage that has changed then.Then, in step S205, measure and transmit the first threshold voltage that disturbs, determine then whether the first transmission bias voltage has increased to first voltage.That is repeatedly execution in step S201 is to S209, till first bias voltage increases to first voltage (that is during the first transmission bias voltage is less than first voltage).
In brief, utilize the first transmission bias voltage that increases to measure first threshold voltage.Yet, can utilize the first transmission bias voltage that reduces to measure first threshold voltage.For example, can utilize and be reduced to first of 1.5V from 14.5V and transmit bias voltage and measure first threshold voltage.
That is, be 1.5V as first voltage of target voltage.In this case, repeatedly execution in step S201 is to S209, till the first transmission bias voltage has first voltage (that is during the first transmission bias voltage is higher than first voltage), so that measure first threshold voltage.
Under the situation that the measurement of first threshold voltage is finished, measure second threshold voltage that programming is disturbed as described below.
The process that the threshold voltage that disturbs programming is measured
Fig. 4 is a diagram and view according to the relevant circuit of the method for the threshold voltage of the programming of the measurement in the method for the measurement channel boosting voltage of an example of the present invention embodiment interference.
With reference to figure 2 and Fig. 4, in step S211, carry out erase operation about storage unit, measure the threshold voltage of eraseable memory unit then.
In step S213, for example the supply voltage of Vcc is applied to bit line BL, and for example has that the program bias of the constant level of 21V is provided for selected cell.In addition, second transmit the non-selected unit of bias voltage among the low level of for example 1.5V is applied to those unit the unit strings.Here, apply program bias, fully carried out so that disturb, that is the unit has-the above threshold voltage of 2V about the programming of unit with the high voltage of about 21V.
In step S215, after the time-out that is used for common programming operation that for example is not more than 50 μ s goes, measure second threshold voltage of selected cell.
In step S217, determine that second transmits bias voltage and whether increased to the voltage (being called as " second voltage " hereinafter) of measuring the required for example 14.5V of second threshold voltage that programming disturbs.
In step S219, transmit bias voltage second and be not increased under second voltage condition, adjust the level of the second transmission bias voltage.Particularly, increase the level of the second transmission bias voltage with the step-length of the voltage between 0.1V and the 2.0V.Subsequently, execution in step S211 in step S213, will have the second transmission bias voltage that changes level and be applied to non-selected unit then.Then, in step S217, measure second threshold voltage that programming is disturbed, determine then whether the second transmission bias voltage has increased to second voltage.That is repeatedly execution in step S211 is to S219, till second bias voltage increases to second voltage (that is during the second transmission bias voltage is less than second voltage).
In brief, utilize the second transmission bias voltage that increases to measure second threshold voltage.Yet, can utilize the second transmission bias voltage that reduces to measure second threshold voltage.For example, can utilize and be reduced to second of 1.5V from 14.5V and transmit bias voltage and measure second threshold voltage.
In other words, second voltage as target voltage is 1.5V.In this case, repeatedly execution in step S211 is to S219, till the second transmission bias voltage has second voltage (that is during the second transmission bias voltage is higher than second voltage), so that measure second threshold voltage.
Under the situation that the measurement of second threshold voltage is finished, measure channel boosting voltage as described below.
The process that channel boosting voltage is measured
Fig. 5 is diagram and the view that disturbs the curve relevant with the variations in threshold voltage of programming interference according to transmission.
Referring to figs. 2 and 5, curve A is indicated the variations in threshold voltage by the selected cell of following measurement: the program bias that will have 21V is applied to grid interference so that measurement is programmed of the selected cell of erase unit, and is applied to the grid of non-selected unit with will transmitting bias-variable.In addition, curve B diagram is by the variations in threshold voltage of the selected cell of following measurement: the grid of selected cell that will be applied to erase unit is so that measurement transmission interference with will transmitting bias-variable, and the transmission bias voltage that will have a constant level is applied to the grid of non-selected unit.
In step S221, by with programming disturb relevant curve A detect when provide have with the actual program operation in threshold voltage during the transmission bias voltage of the identical level of the transmission bias voltage that applied, and by disturbing relevant curve B to detect with transmitting to have the transmission bias voltage that threshold voltage was applied of the level identical with the threshold voltage of detection.
Particularly, in C1, detect threshold voltage when the transmission bias voltage with level identical with the transmission bias voltage that applied in the actual program operation is provided by curve A.
For example, the transmission bias voltage in the actual program operation is under the situation of 8.5V, and the threshold voltage of detection is-1V.
In addition, when in the operation of the threshold voltage characteristic that threshold voltage detect to transmit is disturbing be-during 1V (in C2), the transmission bias voltage that detection applies in C3.Here, the transmission bias voltage that disturbs of the transmission that is applied during for-1V when threshold voltage has 12V.
In the step of S223,, measure channel boosting voltage by using the transmission bias voltage of measuring measuring under the situation of transmitting bias voltage by transmitting interference characteristic.In this case, channel boosting voltage equals the transmission bias voltage that program bias deducts detection.Here, program bias is meant the voltage that applies to selected cell for the threshold voltage characteristic that detects the programming interference.
In addition, second threshold voltage that disturbs of programming equals program bias and deducts channel boosting voltage.In this case,, the first threshold voltage that transmit to disturb deducts 0V, so under first threshold voltage had situation with the second threshold voltage same level, channel boosting voltage was poor corresponding to the transmission bias voltage of program voltage and detection because equaling to transmit bias voltage.
For example, when the transmission bias voltage that detects by curve B had about 12V, the program bias that channel boosting voltage has a 21V deducted the transmission bias voltage of 12V, that is 9V.
When threshold voltage be-during 1V, transmitting bias voltage by transmitting under the situation that interference characteristic detects, the scope of transmitting bias variations increases, and is increased to higher level so that transmit bias voltage.Then, once more execution in step S201 to S219.
Any quoting all to " embodiment ", " embodiment ", " example embodiment " or the like in this instructions is meant: concrete feature, structure or the characteristic of Miao Shuing comprises at least one embodiment of the present invention in conjunction with the embodiments.The appearance in various places in instructions of such word differs to establish a capital and refers to same embodiment.In addition, when describing concrete feature, structure or characteristic, can think that it is realized within the scope of such feature, structure or characteristic in conjunction with other embodiment those skilled in the art in conjunction with any embodiment.
Although described embodiment with reference to its some one exemplary embodiment, should be appreciated that those skilled in the art can make many other modifications and embodiment, they will drop within the spirit and scope of principle of the present disclosure.More specifically, the ingredient that the subject combination within the scope of open, accompanying drawing and accessory claim is arranged and/or the variations and modifications of layout all are possible.Except variation and modification to ingredient and/or layout, replacing use also is tangible to those skilled in the art.
Claims (22)
1. the method for the channel boosting voltage in the measuring N AND flush memory device, described method comprises:
Non-selected unit among the storage unit of having wiped applies the transmission bias voltage with constant level, and measures the first threshold voltage of described selected cell by the first transmission bias voltage that the selected cell that changes among the storage unit of having wiped applies;
Selected cell among the storage unit of having wiped applies the program bias with constant level, and measures second threshold voltage of described selected cell by changing the second transmission bias voltage that applies to described non-selected unit;
Detect when what have the level identical and described second transmit described second threshold voltage of having measured when bias voltage is applied in, and detect the level of the described first transmission bias voltage that when described first threshold voltage is identical with described second threshold voltage, has applied with the transmission bias voltage that applies in the programming operation; And
Measure described channel boosting voltage by first level that transmits bias voltage that uses described detection,
Wherein, described channel boosting voltage equals described program bias and deducts detected first and transmit bias voltage.
2. the method for claim 1, wherein described program bias is 21V.
3. the method for claim 1, wherein before applying the transmission bias voltage with constant level to the non-selected unit among the storage unit of having wiped, described method further comprises:
Whole storage unit in the piece are carried out erase operation;
After carrying out described erase operation, measure the threshold voltage of described storage unit.
4. method as claimed in claim 3, wherein, the step of measuring described first threshold voltage comprises:
Apply described transmission bias voltage to described non-selected unit, and apply the described first transmission bias voltage to described selected cell with constant level;
Measure described first threshold voltage; And
Increase the level of the described first transmission bias voltage,
Wherein, when described first transmits bias voltage less than target level, repeat describedly to wipe, describedly apply, the step of described measurement and described increase.
5. method as claimed in claim 4, wherein, described target voltage is 14.5V.
6. method as claimed in claim 4, wherein, the described first transmission bias voltage and described second transmits bias voltage and is applied in the time of 30 μ s to 40 μ s.
7. method as claimed in claim 4, wherein, described first transmits bias voltage and described second transmits variation in the scope that is biased in 1.5V and 14.5V.
8. method as claimed in claim 3, wherein, the step of the described first threshold voltage of described measurement comprises:
Apply described transmission bias voltage to described non-selected unit, and apply the described first transmission bias voltage to described selected cell with constant level;
Measure described first threshold voltage; And
Reduce the level of the described first transmission bias voltage,
Wherein, described first transmit bias voltage and be higher than target level during, repeatedly carry out describedly wipe, describedly apply, described measurement and the described step that reduces.
9. method as claimed in claim 8, wherein, described target voltage is 1.5V.
10. method as claimed in claim 8, wherein, the described first transmission bias voltage and described second transmits bias voltage and is applied in the time of 30 μ s to 40 μ s.
11. method as claimed in claim 8, wherein, described first transmits bias voltage and described second transmits variation in the scope that is biased in 1.5V and 14.5V.
12. the method for claim 1, wherein after measuring the first threshold voltage of described selected cell, and before applying the program bias with constant level to the selected cell among the storage unit of having wiped, described method further comprises:
Each storage unit is carried out erase operation;
After carrying out described erase operation, measure the threshold voltage of described storage unit.
13. method as claimed in claim 12, wherein, the step of described second threshold voltage of described measurement comprises:
Apply described program bias to described selected cell, and apply the described second transmission bias voltage to described non-selected unit with constant level;
Measure described second threshold voltage; And
Increase the level of the described second transmission bias voltage,
Wherein, described second transmit bias voltage less than target level during, repeatedly carry out describedly wipe, describedly apply, the step of described measurement and described increase.
14. method as claimed in claim 13, wherein, described target voltage is 14.5V.
15. method as claimed in claim 14, wherein, the described first transmission bias voltage and described second transmits bias voltage and is applied in the time of 30 μ s to 40 μ s.
16. method as claimed in claim 13, wherein, described first transmits bias voltage and described second transmits variation in the scope that is biased in 1.5V and 14.5V.
17. method as claimed in claim 13, wherein, described program bias is 21V.
18. method as claimed in claim 12, wherein, the step of described second threshold voltage of described measurement comprises:
Apply described program bias to described selected cell, and apply the described second transmission bias voltage to described non-selected unit with constant level;
Measure described second threshold voltage; And
Reduce the level of the described second transmission bias voltage,
Wherein, when described second transmits bias voltage and be higher than target level, repeat describedly to wipe, describedly apply, described measurement and the described step that reduces.
19. method as claimed in claim 18, wherein, described target voltage is 1.5V.
20. method as claimed in claim 18, wherein, the described first transmission bias voltage and described second transmits bias voltage and is applied in the time of 30 μ s to 40 μ s.
21. method as claimed in claim 18, wherein, described first transmits bias voltage and described second transmits variation in the scope that is biased in 1.5V and 14.5V.
22. method as claimed in claim 18, wherein, described program bias is 21V.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060031445 | 2006-04-06 | ||
| KR20060031445 | 2006-04-06 | ||
| KR10-2006-0031445 | 2006-04-06 | ||
| KR1020070027645 | 2007-03-21 | ||
| KR10-2007-0027645 | 2007-03-21 | ||
| KR1020070027645A KR100861647B1 (en) | 2006-04-06 | 2007-03-21 | Method of measuring a channel boosting voltage in a NAND flash memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101051529A CN101051529A (en) | 2007-10-10 |
| CN101051529B true CN101051529B (en) | 2011-02-09 |
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| CN200710090410XA Expired - Fee Related CN101051529B (en) | 2006-04-06 | 2007-04-06 | Method of measuring a channel boosting voltage in a NAND flash memory device |
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| CN (1) | CN101051529B (en) |
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| KR100894784B1 (en) * | 2007-09-10 | 2009-04-24 | 주식회사 하이닉스반도체 | Programming method of flash memory device |
| KR100953046B1 (en) * | 2007-12-27 | 2010-04-14 | 주식회사 하이닉스반도체 | Method of operating a non volatile memory device |
| KR102374228B1 (en) * | 2015-08-27 | 2022-03-15 | 삼성전자주식회사 | Boosted voltage generator of resistive type memory device, voltage generator including the same and resistive type memory device including the same |
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| US6175522B1 (en) * | 1999-09-30 | 2001-01-16 | Advanced Micro Devices, Inc. | Read operation scheme for a high-density, low voltage, and superior reliability nand flash memory device |
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| JP2008005010A (en) * | 2006-06-20 | 2008-01-10 | Matsushita Electric Ind Co Ltd | Motion picture editing method |
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| US5642309A (en) * | 1994-09-09 | 1997-06-24 | Samsung Electronics Co., Ltd. | Auto-program circuit in a nonvolatile semiconductor memory device |
| US5991202A (en) * | 1998-09-24 | 1999-11-23 | Advanced Micro Devices, Inc. | Method for reducing program disturb during self-boosting in a NAND flash memory |
| US6175522B1 (en) * | 1999-09-30 | 2001-01-16 | Advanced Micro Devices, Inc. | Read operation scheme for a high-density, low voltage, and superior reliability nand flash memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070100114A (en) | 2007-10-10 |
| KR100861647B1 (en) | 2008-10-02 |
| CN101051529A (en) | 2007-10-10 |
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