CN101047087A - Film photoetching manufacturing method of plasma display plate electrode and its product - Google Patents
Film photoetching manufacturing method of plasma display plate electrode and its product Download PDFInfo
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- CN101047087A CN101047087A CNA2007100218181A CN200710021818A CN101047087A CN 101047087 A CN101047087 A CN 101047087A CN A2007100218181 A CNA2007100218181 A CN A2007100218181A CN 200710021818 A CN200710021818 A CN 200710021818A CN 101047087 A CN101047087 A CN 101047087A
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Abstract
The present invention relates to a film photo-engraving process to prepare plasma display panel electrode and its product. Said preparation method is characterized by that said method can reduce the residual bubble between photosensitive dry film and baseplate and utilize film metal electrode to prepare plasma display panel electrode by adopting photo-engraving process, after said photo-engraving process a secondary hot-pressing film-drying process is added.
Description
Technical field
The present invention relates to a kind of manufacture method of electrode for plasma display board and utilize the plasma display panel of this method gained electrode, especially a kind of plasma display panel of based thin film metal electrode, specifically film photoetching manufacturing method of a kind of plasma display plate electrode and products thereof.
Background technology
At present, Chang Gui plasma display panel is made up of header board and back plate.Header board mainly is made up of substrate glass substrate, electrode group (comprise scan electrode and keep electrode), dielectric layer, diaphragm etc.Back plate mainly is made up of substrate glass substrate, electrode group, dielectric layer, barrier etc.
In the conventional plasma display panel, the electrode group of header board has two kinds of possibilities usually, and a kind of is the combination electrode that is made of transparent ITO electrode and metal electrode, and another kind is the simple metal electrode.The electrode group of back plate is the simple metal electrode.
Electrode group as header board adopts combination electrode, then in combination electrode, the ITO electrode is the electrode that display unit is used to discharge, for the visible light that plasma discharge is excited is launched by header board as much as possible, show electrode is selected transparent ITO usually, but because the ITO electrode can become very big through resistance behind the high temperature sintering, to drive energy consumption and obtain bigger aperture opening ratio in order to save, usually it is narrower to make width on the surface of ITO electrode, the less metal electrode of resistance is as bus electrode, bus electrode commonly used is the silver electrode with the preparation of thick film photolithography method, or the chromium/copper/chromium electrode for preparing with the thin film photolithography method.
In large tracts of land, high resolution plasma display panel, the physical dimension of each discharge cell is very small, thereby the width of electrode and gap have reached design limit, at this moment with combination electrode as the electrode group of header board too big meaning not, be inexorable trend as the electrode group of header board directly with the simple metal electrode.The electrode group of back plate also is the simple metal electrode.As the simple metal electrode, metal material difference, preparation method are also different, adopt thick film photolithography method or thin film photolithography method usually, and for example: silver electrode is with the preparation of thick film photolithography method, and aluminium electrode, chromium/copper/chromium electrode are with the preparation of thin film photolithography method.
In sum, in the preparation process of plasma display panel, no matter be header board, still the back plate all needs to make metal electrode.Be equipped with in the silver electrode technology in the thick film photolithography legal system, electrode slurry need just have conductive capability through behind the high temperature sintering, and high-temperature sintering process will make the edge of electrode upwarp, make the thickness evenness variation of electrode, and then the withstand voltage properties of reduction substrate, on display screen, will go out the occurrence point at last, even broken string.And the thin film photolithography technology can not only address the above problem, and its technical maturity, and the cost of material is low, is widely used in the preparation of the metal electrode of plasma display panel.
The technology of thin film photolithography method mainly is made up of following steps: the evaporation of membrane electrode, the coating of photosensitive material, the exposure of photosensitive material, the development of photosensitive material, the curing of photosensitive material, the etching of membrane electrode, the removal of photosensitive material.Wherein, being coated in of photosensitive material plays a part key in the thin film photolithography technology.
Now, in the processing procedure of large area plasma display panel, the dry film pressure sintering is adopted in the coating of photosensitive material more, is about to photosensitive material and makes certain thickness, uniform dry film, forces to submit on the substrate of transmission by the dry film of hot pressing roller with heating.The advantage of this method is that technology is simple, the time is short, efficient is high, is fit to volume production; Shortcoming is higher to the quality requirement of dry film, can not have abnormity point such as depression, projection to exist on the dry film, otherwise will bring more defects to postchannel process.In the hot pressing of dry film, the main cause that produces waste product is: residual micro-bubble between photosensitive dry film and the substrate.The formation reason of these micro-bubbles has a lot, such as the defective of substrate surface, environment cleanliness is not enough and the dust that drops, the abnormity point of photosensitive dry film etc.
The exposure of photosensitive material can utilize exposure machine to finish.Exposure machine has two kinds usually: contactless exposure machine and contact exposure machine.Leave certain clearance between the mask of contactless exposure machine and the substrate, do not contact each other, its advantage is that the coating material on mask and the substrate can not pollute each other, destroy, and exposure intensity is even, the basic vertical substrate surface incident of ultraviolet light; Shortcoming is that the requirement light-source system can produce collimated light, makes the manufacture difficulty of exposure sources and cost all very high.The mask and the substrate of contact exposure machine contact with each other, because the emergent ray of light-source system and substrate surface out of plumb, thereby mask and substrate must fit tightly the precision that could guarantee exposure, adopts the method that vacuumizes to realize fitting tightly of mask and substrate usually.The advantage of contact exposure machine is that device fabrication difficulty and cost are low, and shortcoming is the adjustment difficulty of equipment, large-area planar Design of Vacuum System difficulty height.
The micro-bubble that produces in the dry film hot pressing can cause the electrode open defect on the one hand; On the other hand, finish the exposure of photosensitive material if adopt the contact exposure machine, so, because the contact exposure machine need vacuumize mask and substrate are fitted tightly, under the powerful negative pressure that vacuumizes, micro-bubble between photosensitive dry film and the substrate will be exaggerated, thereby makes the quantity multiplication of electrode open defect.Thereby, to finish with the contact exposure machine in the exposure technique of hot pressing photosensitive dry film, its main difficult technical is how to reduce the influence of bubble residual between photosensitive dry film and the substrate to substrate quality.
Summary of the invention
The objective of the invention is to prepare in the metal electrode process at the thin film photolithography technology, hot pressing photosensitive dry film technology is residual bubble between photosensitive dry film and substrate easily, and these bubbles not only bring defective to electrode wires easily, more serious is that these bubbles can be exaggerated under negative pressure in contact exposure, thereby make problems such as defect point multiplication, invent and a kind ofly reduce bubble residual between photosensitive dry film and the substrate film photoetching manufacturing method of the plasma display plate electrode of the influence of substrate quality and products thereof.
One of technical scheme of the present invention is:
A kind of film photoetching manufacturing method of plasma display plate electrode comprises electrode of substrate in front group and metacoxal plate electrode group, and they are all formed by the following steps manufacturing successively:
(1) evaporation of membrane electrode;
(2) coating of photosensitive material;
(3) exposure of photosensitive material;
(4) development of photosensitive material;
(5) curing of photosensitive material;
(6) etching of membrane electrode;
(7) removal of photosensitive material;
Wherein dry film hot pressing is adopted in the coating of the photosensitive material in (two) step, the exposure of the photosensitive material in (three) step adopts the contact exposure machine to expose, it is characterized in that between the curing of the development of (four) step photosensitive material and (five) step photosensitive material, increasing by a dry film hot pressing process, the dry film that is about to gained after the development of (four) step photosensitive material adopts pressure sintering to carry out secondary hot pressing once more, goes on foot the dry film of gained and the residual bubble between the substrate to eliminate described (four).
Described dry film hot pressing is meant makes the uniform dry film of thickness with photosensitive material, dry film is placed between substrate and the hot pressing roller, thereby substrate is forced to submit dry film on substrate by the hot pressing roller.
Two of technical scheme of the present invention is:
A kind of plasma display panel, comprise header board and back plate, header board comprises preceding substrate glass substrate 1, dielectric layer 3 and diaphragm 4, diaphragm 4 covers the surface of dielectric layer 3, back plate comprises back substrate glass substrate 5, dielectric layer 7, barrier rib 8, barrier rib 8 is located at the surface of dielectric layer 7, it is characterized in that being provided with between glass substrate 1 and dielectric layer 3 a metal electrode group 2 of utilizing secondary hot pressing dry film processes to form; Between glass substrate 5 and dielectric layer 7, also be provided with a metal electrode group 6 of utilizing secondary hot pressing dry film processes to form.
Described metal electrode group 2 or be the combination electrode that ITO electrode and metal electrode constitute, or be metal electrode.
Described barrier rib 8 or for the glass paste sintering forms, or be metal.
Described plasma display panel or be the three-electrode surface discharge structure, or be that two electrode pairs are to discharging structure.
Described plasma display panel or be monochromatic plasma display panel, or be colour plasma display board.
Beneficial effect of the present invention:
1. the present invention adopts the dry film pressure sintering to prepare large-area light sensitive layer, and technology is simple, the time is short, efficient is high, is fit to volume production.2. the present invention adopts the contact exposure technology, and the manufacture difficulty and the cost of contact exposure equipment are lower.3. the present invention adopts the thin film photolithography technology to prepare metal electrode in the plasma display panel, technical maturity, and the cost of material is low, the reliability height.4. the present invention has increased secondary hot pressing technology on the basis of thin film photolithography technology, has reduced the defect point of electrode, has improved the quality of substrate.
In addition, it is evenly good to utilize the prepared plasma display panel of the inventive method also to have a demonstration, the advantage of working stability.
Description of drawings
Fig. 1 is the three-dimensional decomposition texture schematic diagram of plasma display panel of the present invention.
Fig. 2 is the view of developing process metacoxal plate.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
A kind of film photoetching manufacturing method of plasma display plate electrode comprises electrode of substrate in front group and metacoxal plate electrode group, and they are all formed by the following steps manufacturing successively:
(1) evaporation of membrane electrode; The process conditions and the work step of this step are same as the prior art;
(2) coating of photosensitive material (adopting dry film hot pressing to carry out); The process conditions and the work step of this step are same as the prior art, and dry film hot pressing wherein is meant makes the uniform dry film of thickness with photosensitive material, dry film is placed between substrate and the hot pressing roller, thereby substrate is forced to submit dry film on substrate by the hot pressing roller;
(3) exposure of photosensitive material (adopting the contact exposure machine to expose); The process conditions and the work step of this step are same as the prior art;
(4) development of photosensitive material; The process conditions and the work step of this step are same as the prior art;
(5) utilize pressure sintering to carry out secondary hot pressing to the dry film after developing, to eliminate the residual bubble between dry film and the substrate.The process conditions and the work step of this step are same as the prior art;
(6) curing of photosensitive material; The process conditions and the work step of this step are same as the prior art;
(7) etching of membrane electrode; The process conditions and the work step of this step are same as the prior art;
(8) removal of photosensitive material; The process conditions and the work step of this step are same as the prior art.
Key of the present invention is to have increased secondary hot pressing to eliminate bubble, so other processing step is all same as the prior art, maybe can adopt prior art to be realized, the structure of the back dry film that develops for the first time as shown in Figure 2.
The structure of the product of the electrode of having used said method production of the present invention is:
As shown in Figure 1.
A kind of plasma display panel, it comprises header board and back plate.Header board comprises preceding substrate glass substrate 1, electrode group 2, dielectric layer 3 and diaphragm 4, electrode group 2 between glass substrate 1 and dielectric layer 3,4 surfaces that cover dielectric layer 3 of diaphragm.Back plate comprises back substrate glass substrate 5, electrode group 6, dielectric layer 7, barrier rib 8, and electrode group 6 is between glass substrate 5 and dielectric layer 7, and barrier rib 8 is positioned at dielectric layer 7 surfaces.Described front plate electrodes group 2 of its feature and back plate electrode group 6 adopt metal electrode, and prepare with the thin film photolithography technology.The preparation process of described thin film photolithography technology is as follows: the evaporated film metal, and the hot pressing photosensitive dry film, the contact exposure photosensitive dry film, the dry film after the exposure of developing, the secondary hot pressing dry film solidifies dry film, and the etch thin film metal electrode is removed photosensitive dry film.Here different with common thin film photolithography technology is, described electrode group 2 and electrode group 6 all are to adopt the electrode product that has increased secondary hot pressing dry film technology, because at this moment the dry film on the substrate has presented bargraphs 9, the bubble 10 that is present on the lines is very easily run out of from the gap 11 of lines through hot extrusion, after 2～3 times hot extrusion, residual bubble on the lines can be eliminated more than 90%, has improved the quality of electrode greatly.
Described front plate electrodes group or be the combination electrode that ITO electrode and metal electrode constitute, or be metal electrode.
Described barrier rib or for the glass paste sintering forms, or be metal.
Described plasma display panel or be the three-electrode surface discharge structure, or be that two electrode pairs are to discharging structure.
Described plasma display panel or be monochromatic plasma display panel, or be colour plasma display board.
Claims (7)
1, a kind of film photoetching manufacturing method of plasma display plate electrode comprises electrode of substrate in front group and metacoxal plate electrode group, and they are all formed by the following steps manufacturing successively:
(1) evaporation of membrane electrode;
(2) coating of photosensitive material;
(3) exposure of photosensitive material;
(4) development of photosensitive material;
(5) curing of photosensitive material;
(6) etching of membrane electrode;
(7) removal of photosensitive material;
Wherein dry film hot pressing is adopted in the coating of the photosensitive material in (two) step, the exposure of the photosensitive material in (three) step adopts the contact exposure machine to expose, it is characterized in that between the curing of the development of (four) step photosensitive material and (five) step photosensitive material, increasing by a dry film hot pressing process, the dry film that is about to gained after the development of (four) step photosensitive material adopts pressure sintering to carry out secondary hot pressing once more, goes on foot the dry film of gained and the residual bubble between the substrate to eliminate described (four).
2, the film photoetching manufacturing method of plasma display plate electrode according to claim 1, it is characterized in that described dry film hot pressing is meant makes the uniform dry film of thickness with photosensitive material, dry film is placed between substrate and the hot pressing roller again, thereby substrate is forced to submit dry film on substrate by the hot pressing roller.
3, the described method of a kind of claim 1 prepares the plasma display panel of gained, comprise header board and back plate, header board comprises preceding substrate glass substrate (1), dielectric layer (3) and diaphragm (4), diaphragm (4) covers the surface of dielectric layer (3), back plate comprises back substrate glass substrate (5), dielectric layer (7), barrier rib (8), barrier rib (8) is located at the surface of dielectric layer (7), it is characterized in that being provided with between glass substrate (1) and dielectric layer (3) a metal electrode group (2) of utilizing secondary hot pressing dry film processes to form; Between glass substrate (5) and dielectric layer (7), also be provided with a metal electrode group (6) of utilizing secondary hot pressing dry film processes to form.
4, plasma display panel according to claim 3 is characterized in that described metal electrode group (2) or is the combination electrode of ITO electrode and metal electrode formation, or is metal electrode.
5, plasma display panel according to claim 3 is characterized in that described barrier rib (8) or for the glass paste sintering forms, or is metal.
6, plasma display panel according to claim 3 is characterized in that described plasma display panel or is the three-electrode surface discharge structure, or is that two electrode pairs are to discharging structure.
7, plasma display panel according to claim 3 is characterized in that described plasma display panel or is monochromatic plasma display panel, or is colour plasma display board.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100218181A CN100530495C (en) | 2007-04-29 | 2007-04-29 | Film photoetching manufacturing method of plasma display plate electrode and its product |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100218181A CN100530495C (en) | 2007-04-29 | 2007-04-29 | Film photoetching manufacturing method of plasma display plate electrode and its product |
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| Publication Number | Publication Date |
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| CN101047087A true CN101047087A (en) | 2007-10-03 |
| CN100530495C CN100530495C (en) | 2009-08-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007100218181A Expired - Fee Related CN100530495C (en) | 2007-04-29 | 2007-04-29 | Film photoetching manufacturing method of plasma display plate electrode and its product |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104445901A (en) * | 2014-11-28 | 2015-03-25 | 业成光电（深圳）有限公司 | Cutting method for forming cutting channel protection on base plate and surface plate structure of base plate |
| CN107863590A (en) * | 2017-10-12 | 2018-03-30 | 南京邮电大学 | Programmable electro magnetic regulation and control multifunction device and implementation method based on plasma |
-
2007
- 2007-04-29 CN CNB2007100218181A patent/CN100530495C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104445901A (en) * | 2014-11-28 | 2015-03-25 | 业成光电（深圳）有限公司 | Cutting method for forming cutting channel protection on base plate and surface plate structure of base plate |
| CN107863590A (en) * | 2017-10-12 | 2018-03-30 | 南京邮电大学 | Programmable electro magnetic regulation and control multifunction device and implementation method based on plasma |
| CN107863590B (en) * | 2017-10-12 | 2020-11-10 | 南京邮电大学 | Plasma-based programmable electromagnetic/electromagnetic regulation multifunctional device and implementation method |
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| Publication number | Publication date |
|---|---|
| CN100530495C (en) | 2009-08-19 |
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Granted publication date: 20090819 Termination date: 20120429 |