CN101042528B - Pattern dividing method for correcting optical near-field effect - Google Patents
Pattern dividing method for correcting optical near-field effect Download PDFInfo
- Publication number
- CN101042528B CN101042528B CN2006100248727A CN200610024872A CN101042528B CN 101042528 B CN101042528 B CN 101042528B CN 2006100248727 A CN2006100248727 A CN 2006100248727A CN 200610024872 A CN200610024872 A CN 200610024872A CN 101042528 B CN101042528 B CN 101042528B
- Authority
- CN
- China
- Prior art keywords
- contact hole
- distance
- forbidden
- dividing method
- forbidden distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
This invention discloses one graph division method to correct optical near effect, which comprises two steps as: a. determining forbidden distance range; b, distributing sub infraction limit aid diffraction bar in the cross area in the cross line of graph. This invention is to improve graph resolution and focus depth and to lower error amplification factor to get better correction of the effect.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of pattern dividing method that in the photoetching mask-making technology, is used for correcting optical near-field effect.
Background technology
Along with the develop rapidly of semiconductor fabrication, semiconductor devices is in order to reach arithmetic speed faster, bigger data storage amount and more function, and semi-conductor chip develops towards higher component density, high integration direction.In the manufacture process of semiconductor devices, normally according to circuit theory diagrams design circuit domain, again according to the layout design mask pattern, utilize then photoetching process with the figure transfer on the mask on Semiconductor substrate.The layout design rules definitions component of device and the spacing tolerance between connection wire and live width thereof each other can overlapping or contacts to guarantee assembly or lead.The critical dimension of this design rules limit (CD) is defined in the minimum widith of the lead of being allowed in the assembly manufacturing or the minimum spacing between two leads.Under the 90nm process conditions, ULSI Application of C D has entered into tens scopes to the hundreds of nanometer.
In order to realize small CD, must make image focusing meticulousr on the domain on the photoresist of Semiconductor substrate, and must increase optical resolution, to make semiconductor devices near optical resolution limit in the little mask-making technology of photoetching.RET comprises the long light source of radiothermy, phase-shift mask method and utilizes the method for off-axis illumination (OAI).Application number is that 02131645.7 one Chinese patent application discloses a kind of off-axis illumination (OAI) method, theoretically, utilizing under the situation of OAI, and high about 1.5 times of the resolution of the about Billy of resolution during with the tradition irradiation, and can increase the depth of focus (DOF).When the semiconductor devices integrated level is very high; It is important improving DOF; This is because owing to used the bending of preformed figure or chip; Always there are some out-of-flatness property in chip with figure, and the exposure of photoresist is not carried out on same focussing plane on the chip surface or in all positions in each chip.Through the OAI technology, the minimum space cycle that is printed on the live width CD on the substrate by optical system can still can be produced optical close effect by further shortening.Optical close effect comes from the interference between the light of scattering on the figure that closes on mutually.In the deep-submicron device, because the lines very dense, optical close effect can reduce the resolution of optical system for exposure figure.The representational effect of optical close effect comprises forbidden distance (forbidden pitch), i.e. space forbidden distance between the lines.That is to say that the CD size of lines is in less than this disable period scope the time, the resolution of optical system becomes very poor.Because the CD spatial separation of OAI has been optimized to a specific scope, therefore still there is the unapproachable space periodic scope of optical system resolution.In forbidden distance, the increase of linear, energy margin (EL), the isoparametric reduction of DOF and MEEF (mask dilution of precision), these factors often become the bottleneck of the whole process window of restriction.
Summary of the invention
Therefore; The object of the present invention is to provide a kind of new pattern dividing method that is used for correcting optical near-field effect; This method is under the situation that does not increase the distance between the contact hole; Further improve operational characteristic parameter such as DOF in the forbidden distance and reduce MEEF, cut apart the problem of operational characteristic difference in the forbidden distance that rule exists to solve existing figure.
For achieving the above object, the pattern dividing method of correcting optical near-field effect provided by the invention comprises:
A confirms forbidden distance range; Said forbidden distance is the space forbidden distance between the figure;
B arranges cornerwise intersection region between the figure that 2*2 distributes that inferior diffraction limit assists scattering strip; Transverse pitch between the said figure is a forbidden distance, and the centre distance of assisting scattering strip with respect to said inferior diffraction limit between the figure is greater than forbidden distance.
Said figure is a contact hole.
Said step a comprises:
A1 forms contact hole graph on test chip;
A2 detects the contact hole graph data to confirm forbidden distance range.
Said step b comprises:
B1 seeks the contact hole that satisfies condition according to said forbidden distance scope in the reticle contact hole graph;
B2 occurs overlapping region to level and vertical direction extension until the central authorities in contact hole graph with the limit of said contact hole;
B3 adjusts the size of said overlapping region;
B4 arranges the auxiliary scattering strip of the inferior diffraction limit of diagonal line in said overlapping region.
The said contact hole that satisfies condition is the contact hole of horizontal spacing in forbidden distance deducts the scope of width gained in hole between the contact hole.
The present invention has the pattern dividing method of the another kind of correcting optical near-field effect of identical or relevant art characteristic, comprising:
A confirms forbidden distance range; Said forbidden distance is the space forbidden distance between the figure;
B arranges cornerwise intersection region between the figure that 2*2 distributes that inferior diffraction limit assists scattering strip; Transverse pitch between the said figure is a forbidden distance, and the centre distance of assisting scattering strip with respect to said inferior diffraction limit between the figure is greater than forbidden distance;
C is at the auxiliary scattering strip of the inferior diffraction limit of figure intermediate arrangement.
Said figure is a contact hole.
Said step a comprises:
A1 forms contact hole graph on test chip;
A2 detects the contact hole graph data and confirms forbidden distance range.
Said step b comprises:
B1 seeks the contact hole that satisfies condition according to said forbidden distance scope in the reticle contact hole graph;
B2 occurs overlapping region to level and vertical direction extension until the central authorities in contact hole graph with the limit of said contact hole;
B3 adjusts the size of said overlapping region;
B4 arranges the auxiliary scattering strip of the inferior diffraction limit of diagonal line in said overlapping region.
The said contact hole that satisfies condition is the contact hole of horizontal spacing in forbidden distance deducts the distance range of width gained in hole between the contact hole.
Said step c comprises:
C1 seeks spacing deducts the width gained in hole greater than forbidden distance the contact hole of distance range in the reticle contact hole graph;
C2 is at the auxiliary scattering strip of the inferior diffraction limit of the intermediate arrangement of the said contact hole of step c1.
Compared with prior art, the present invention has the following advantages:
Pattern dividing method of the present invention is at first transferred to the graphic documentation of chip surface from mask through inspection on test chip to specific photoetching process; Confirm the scope of forbidden distance (forbidden pitch), at the place, cornerwise point of crossing of contact hole (CT) the auxiliary scattering strip (SRAF) of inferior diffraction limit is set then.That is to say that traditional SRAF inserts between hole and hole, and the SRAF of pattern dividing method of the present invention is the cornerwise cross section insertion in hole and hole.So the method for partition graph makes forbidden distance become the distance between the diagonal line in hole and hole by the distance between the limit in hole and hole, obviously the latter greater than the former about 1.4 times.The increase of forbidden distance helps improving graphics resolution and depth of focus (DOF) on the one hand, makes optical close effect revised preferably; On the other hand; Because pattern dividing method of the present invention makes forbidden distance become the distance between the contact hole diagonal line; Distance between the limit of contact hole is just less than about 1.4 times of forbidden distance so; Obviously not under the situation on limit, increase the dense degree of figure in forbidden distance, helped the further raising of device integrated level.In addition, pattern dividing method of the present invention can reduce existing pattern dividing method and arranges SRAF and conflict that the defective owing to SRAF itself that possibly cause causes in level and vertical direction.
Description of drawings
Figure 1A is a reticle contact hole graph synoptic diagram in the photoetching process;
Figure 1B is the SRAF structural representation between the contact hole graph;
Fig. 2 A and Fig. 2 B pattern dividing method of the present invention are confirmed the synoptic diagram of overlapping region process;
Fig. 3 is positioned at the pictorial diagram of contact hole diagonal line intersection region for SRAF;
Fig. 4 is positioned at the measured DOF curve of diverse location map for SRAF;
Fig. 5 A is the contact hole graph contrast synoptic diagram of SRAF gained between contact hole;
Fig. 5 B is the contact hole graph contrast synoptic diagram that SRAF is positioned at contact hole diagonal line intersection region gained;
Fig. 6 is the process flow diagram of pattern dividing method of the present invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Photoetching is a critical process of making semiconductor devices and integrated circuit.Good photoetching process have mask plate dilution of precision (MEEF) near 1, high energy margin (Exposure Latitude, EL) and enough depths of focus (DOF).Along with the device that integrated circuit comprised is more and more, require individual devices size and more and more littler at interval.Since 180 nanometer products, optical close effect becomes significantly, and it shows tangible two dimensional effects, as, line end shortens (Line End Shortening) and corner passivation (Corner Rounding).Except the effect of two dimension, at one dimension, live width can become to partial coherence (Partial Coherence) sensitivity with the variation of space periodic.Although at 0.18 micron, can satisfy control requirement based on the optical close correction of some simple rules and the optimization of some conditions of exposures to live width, at 0.13 micron, it is indispensable that the complicated more optical close correction based on model becomes.
Optical close effect comes from the interference between the light of scattering on the figure that closes on mutually.Representational effect is included in medium spatial separation, cries the reducing of live width in forbidden distance (forbidden pitch) scope again, line end shortens and resolution decline phenomenon such as corner passivation.These phenomenons be since in forbidden distance the decline of DOF and the increase of MEEF cause.To 0.13 micron and above technology, gentle optical close correction comprises close paucicostellae balanced bandwidth, line end is stable and corner adds upholstery border (Serif) and has been enough to satisfy the inhomogeneity requirement of live width.To 0.13 micron and following technology, what the complicated more optical close effect correction based on model just became is indispensable because it can do correction to various complicated situations with the optical model of calibrating.Usually (Sub-Resolution AssistFeatures SRAF) strengthens the focusing degree of depth (DOF), but some locally can need increase level and vertical auxiliary scattering strip simultaneously, thereby causes conflict in figure, to use the auxiliary scattering strip of inferior diffraction limit.And when not optimization of technology itself, the disappearance of auxiliary scattering strip can cause broken string.On the one hand, thick cutting apart can cause tiny figure to be missed, and on the other hand, too thin cutting apart can produce some excessive corrections and correct mistakes, and causes mask plate inspection difficulty.So, realize that the key of good optical close effect correction is to formulate the good pattern dividing method of a cover, satisfy process window, mainly be meant the requirement of mask plate dilution of precision and depth of focus.
The pattern dividing method of correcting optical near-field effect of the present invention is when being applied to the cutting apart of contact hole (CT) figure; At first on test chip, transfer to the graphic documentation of chip surface from mask through inspection; Confirm the scope of forbidden distance (forbidden pitch), just the horizontal minimum centers-distance between hole and the hole.Auxiliary scattering strip (SRAF) figure of inferior diffraction limit is set in cornerwise intersection region of contact hole, makes between hole and the hole centre distance with respect to SRAF greater than forbidden distance.Therefore, under the constant situation of the transverse pitch between hole and the hole, and arrange that between contact hole graph SRAF compares, diagonal line SRAF is set has higher resolution and DOF, and littler MEEF.Specify pattern dividing method of the present invention below.
Figure 1A is a reticle contact hole graph synoptic diagram in the photoetching process.As shown in Figure 1, when confirming forbidden distance, at first utilize photoetching process on chip, to form contact hole graph.(SEM) checks graphic documentation on chip through scanning electron microscope, just can confirm forbidden distance range according to what parameters such as DOF, MEEF and resolution changed.As previously mentioned; When graphics intensive arrives to a certain degree; Interference on the figure that closes on mutually between the light of scattering causes optical close effect to become obviously, and the resolution of figure can descend, and in figure, adds auxiliary scattering strip (the Sub-Resolution AssistFeatures of inferior diffraction limit usually; SRAF) strengthen the focusing degree of depth (DOF), through increasing resolution and the contrast that DOF improves figure.
Figure 1B is the SRAF structural representation between the contact hole graph in the prior art.Shown in Figure 1B, wherein, the distance between the figure 10 is S, and the width of figure is W.Existing pattern dividing method is in the middle of figure 10, to add SRAF 11.Suppose that forbidden distance is W+S, i.e. centre distance between the figure 10, promptly figure 10 is a forbidden distance with respect to the centre distance between the SRAF 11.In other words, the insertion of SRAF 11 can not make between the figure 10 increases with respect to SRAF 11 distances.Therefore the effect of improving resolution and DOF is also not obvious.
Fig. 2 A and Fig. 2 B pattern dividing method of the present invention are confirmed the synoptic diagram of overlapping region process.Shown in Fig. 2 A and 2B,, find forbidden distance range from the data detection of chip-scale, such as be 260nm-320nm for certain specific photoetching process.Suppose the big or small W=120nm of contact hole 20.Forbidden distance=W+S, that is the centre distance between the hole 20.Between the hole 20 of so corresponding forbidden distance is exactly 140nm～200nm apart from S.In the figure of client design, seek the limit of the following condition that satisfies condition with the DRC instrument, the distance between limit and the limit deducts the resulting distance range of width W in hole 20, the i.e. limit of distance between 140nm and 200nm for forbidden distance.With the DRC instrument find these limits 100nm that outwards extends.Only the central of contact hole graph at 2*2 just has the polygon overlapping areas 21 that four extensions obtain, and can elect it with the DRC instrument.Finding to such an extent that these overlapping places also keep, adjust its size, with the DRC instrument as the position of last layout diagonal line SRAF.
Fig. 3 is positioned at the pictorial diagram of contact hole diagonal line intersection region for SRAF.As shown in Figure 3, through the pattern dividing method of the invention described above, SRAF 31 is set at cornerwise intersection region of figure 30.Suppose that forbidden distance is W+S, promptly the transverse pitch between the figure 30 is W+S.So; Because the position of the SRAF 31 that confirms through pattern dividing method of the present invention is in the diagonal line intersection region of figure 30, by finding out distance B＞S among the figure; Obviously make between the figure 30 centre distance with respect to SRAF 31 greater than forbidden distance W+S, promptly greater than forbidden distance.In other words, because the insertion of SRAF 31, under the constant situation of the centre distance of figure 30, make that the centre distance with respect to SRAF 31 increases between the figure 30, just greater than forbidden distance.Therefore and since pattern dividing method of the present invention be the figure spacing greater than forbidden distance, DOF is corresponding with graphics resolution to improve and improves thereby make.
Fig. 4 is positioned at the measured DOF curve of diverse location map for SRAF.Figure intermediate cam form point line is the DOF curve that the SRAF of pattern dividing method of the present invention obtains, and the rhombus dotted line is provided with the DOF curve that SRAF obtains for routine in the middle of figure, and obviously pattern dividing method of the present invention DOF in the forbidden distance scope is improved.
Fig. 5 A is the contact hole graph contrast synoptic diagram of SRAF gained between contact hole, and Fig. 5 B is the contact hole graph contrast synoptic diagram that SRAF is positioned at contact hole diagonal line intersection region gained.Comparison diagram 5A and Fig. 5 B can find out that pattern dividing method of the present invention makes the resolution (or contrast) of figure arrange that with respect to routine the method for SRAF has significant improvement.
Fig. 6 is the process flow diagram of pattern dividing method of the present invention.As shown in Figure 6, pattern dividing method of the present invention at first forms contact hole graph on test chip; The test pattern data is to confirm forbidden distance range then.According to said forbidden distance scope, in the reticle contact hole graph, seek the contact hole that satisfies condition; The limit of said contact hole is occurred the overlapping region to level and vertical direction extension until the central authorities in contact hole graph; Adjust the size of said overlapping region; Arrange the auxiliary scattering strip (SRAF) of the inferior diffraction limit of diagonal line in said overlapping region.The contact hole that the wherein said contact hole that satisfies condition is a spacing in forbidden distance deducts the scope of width gained in hole.And the present invention not only provides independent use at diagonal line the method for SRAF to be set, and the method that pattern dividing method of the present invention and conventional pattern dividing method is combined use also is provided.Promptly after SRAF is arranged in figure diagonal line intersection region, in the reticle contact hole graph, seek spacing deducts the width gained in hole greater than forbidden distance the contact hole of distance range again; Then at the intermediate arrangement SRAF of said contact hole.Do the operational characteristic that not only can further improve partition graph like this, and can improve the DOF and the resolution of forbidden distance graphic structure.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (9)
1. the pattern dividing method of a correcting optical near-field effect comprises:
A confirms forbidden distance range; Said forbidden distance is the space forbidden distance between the figure, and said figure is a contact hole;
B arranges cornerwise intersection region between the figure that 2*2 distributes that inferior diffraction limit assists scattering strip; Transverse pitch between the said figure is a forbidden distance, and the centre distance of assisting scattering strip with respect to said inferior diffraction limit between the figure is greater than forbidden distance.
2. pattern dividing method as claimed in claim 1 is characterized in that: said step a comprises:
A1 forms contact hole graph on test chip;
A2 detects the contact hole graph data to confirm forbidden distance range.
3. pattern dividing method as claimed in claim 1 is characterized in that: said step b comprises:
B1 seeks the contact hole that satisfies condition according to said forbidden distance scope in the reticle contact hole graph;
B2 occurs overlapping region to level and vertical direction extension until the central authorities in contact hole graph with the limit of said contact hole;
B3 adjusts the size of said overlapping region;
B4 arranges the auxiliary scattering strip of the inferior diffraction limit of diagonal line in said overlapping region.
4. pattern dividing method as claimed in claim 3 is characterized in that: the said contact hole that satisfies condition is the contact hole of horizontal spacing in forbidden distance deducts the scope of width gained in hole between the contact hole.
5. the pattern dividing method of a correcting optical near-field effect comprises:
A confirms forbidden distance range; Said forbidden distance is the space forbidden distance between the figure, and said figure is a contact hole;
B arranges cornerwise intersection region between the figure that 2*2 distributes that inferior diffraction limit assists scattering strip; Transverse pitch between the said figure is a forbidden distance, and the centre distance of assisting scattering strip with respect to said inferior diffraction limit between the figure is greater than forbidden distance;
C is at the auxiliary scattering strip of the inferior diffraction limit of figure intermediate arrangement.
6. pattern dividing method as claimed in claim 5 is characterized in that: said step a comprises:
A1 forms contact hole graph on test chip;
A2 detects the contact hole graph data and confirms forbidden distance range.
7. pattern dividing method as claimed in claim 5 is characterized in that: said step b comprises:
B1 seeks the contact hole that satisfies condition according to said forbidden distance scope in the reticle contact hole graph;
B2 occurs overlapping region to level and vertical direction extension until the central authorities in contact hole graph with the limit of said contact hole;
B3 adjusts the size of said overlapping region;
B4 arranges the auxiliary scattering strip of the inferior diffraction limit of diagonal line in said overlapping region.
8. pattern dividing method as claimed in claim 7 is characterized in that: the said contact hole that satisfies condition is the contact hole of horizontal spacing in forbidden distance deducts the distance range of width gained in hole between the contact hole.
9. pattern dividing method as claimed in claim 7 is characterized in that: said step c comprises:
C1 seeks spacing deducts the width gained in hole greater than forbidden distance the contact hole of distance range in the reticle contact hole graph;
C2 is at the auxiliary scattering strip of the inferior diffraction limit of the intermediate arrangement of the said contact hole of step c1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100248727A CN101042528B (en) | 2006-03-20 | 2006-03-20 | Pattern dividing method for correcting optical near-field effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100248727A CN101042528B (en) | 2006-03-20 | 2006-03-20 | Pattern dividing method for correcting optical near-field effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101042528A CN101042528A (en) | 2007-09-26 |
| CN101042528B true CN101042528B (en) | 2012-05-23 |
Family
ID=38808127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100248727A Active CN101042528B (en) | 2006-03-20 | 2006-03-20 | Pattern dividing method for correcting optical near-field effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101042528B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102436132B (en) * | 2011-09-08 | 2017-05-10 | 上海华力微电子有限公司 | Method for optical proximity correction based on different substrates |
| CN103309150B (en) * | 2013-06-26 | 2015-06-17 | 上海华力微电子有限公司 | Processing method for layout data |
| CN103885285B (en) * | 2014-03-20 | 2016-08-17 | 上海华力微电子有限公司 | A kind of inspection method for lithography layout contact hole focus |
| CN105223770B (en) * | 2014-05-27 | 2019-07-23 | 无锡华润上华科技有限公司 | The method and system of specially treated figure is marked in optical approach effect amendment |
| CN105226007B (en) * | 2014-06-13 | 2018-10-16 | 中芯国际集成电路制造(上海)有限公司 | The production method of metal interconnection structure |
| CN105467746B (en) * | 2014-09-12 | 2019-09-17 | 上海华虹宏力半导体制造有限公司 | OPC early period the processing method to domain |
| CN108646515A (en) * | 2018-04-27 | 2018-10-12 | 深圳市华星光电技术有限公司 | A kind of mask plate, array substrate |
| US10796065B2 (en) * | 2018-06-21 | 2020-10-06 | Kla-Tencor Corporation | Hybrid design layout to identify optical proximity correction-related systematic defects |
| CN113050367A (en) * | 2019-12-27 | 2021-06-29 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity effect correction method and system, mask and preparation method thereof |
| CN113759656A (en) * | 2020-06-01 | 2021-12-07 | 中芯国际集成电路制造(上海)有限公司 | Mask manufacturing method, pattern correction method and semiconductor device forming method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413683B1 (en) * | 2000-06-23 | 2002-07-02 | International Business Machines Corporation | Method for incorporating sub resolution assist features in a photomask layout |
| CN1737680A (en) * | 2004-08-20 | 2006-02-22 | 旺宏电子股份有限公司 | Advanced oriented assist features for integrated circuit hole patterns |
-
2006
- 2006-03-20 CN CN2006100248727A patent/CN101042528B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413683B1 (en) * | 2000-06-23 | 2002-07-02 | International Business Machines Corporation | Method for incorporating sub resolution assist features in a photomask layout |
| CN1737680A (en) * | 2004-08-20 | 2006-02-22 | 旺宏电子股份有限公司 | Advanced oriented assist features for integrated circuit hole patterns |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101042528A (en) | 2007-09-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101042528B (en) | Pattern dividing method for correcting optical near-field effect | |
| US7598005B2 (en) | Photomask and manufacturing method of the same, and pattern forming method | |
| US7648803B2 (en) | Diagonal corner-to-corner sub-resolution assist features for photolithography | |
| US20070128525A1 (en) | Sub-resolution assist features for photolithography with trim ends | |
| KR101757743B1 (en) | Flare correction method and method for fabricating EUV(Extreme Ultra Violet) mask | |
| US7681173B2 (en) | Mask data generation method and mask | |
| CN100561340C (en) | The method of optical close correction | |
| KR20170047101A (en) | Method for fabricating mask and semiconductor device using OPC(Optical Proximity Correction) | |
| JP5677356B2 (en) | Generation method of mask pattern | |
| CN106094424A (en) | Redundant pattern adding method with auxiliary figure with low resolution | |
| JP2006013494A (en) | Reflective mask, method of using the reflective mask, and method of manufacturing the reflective mask | |
| US8298729B2 (en) | Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks | |
| US20090258302A1 (en) | Sub-resolution assist feature of a photomask | |
| JP5524447B2 (en) | Exposure mask, pattern forming method, and exposure mask manufacturing method | |
| JP2010276997A (en) | Exposure mask and method for manufacturing semiconductor device | |
| US8048592B2 (en) | Photomask | |
| JP4909729B2 (en) | Inspection data creation method and inspection method | |
| KR102471846B1 (en) | Hybrid design layout to identify systematic defects related to optical proximity correction | |
| JP5810642B2 (en) | Mask data generation method and mask manufacturing method using the same | |
| US7694268B2 (en) | Method for optimization of optical proximity correction | |
| US6818362B1 (en) | Photolithography reticle design | |
| JP2006156864A (en) | Resist pattern line width calculating method, mask pattern line width correction method, optical proximity effect correction method, exposure mask fabricating method, electron drawing method for fabricating the exposure mask, exposure method, and semiconductor device manufacturing method | |
| KR100524626B1 (en) | A semiconductor mask where other layers are overlapped and its design method | |
| JP2007248568A (en) | Mask pattern manufacturing machine, program, and method, and mask manufacturing method | |
| JP2003315975A (en) | Phase shifting mask, method for setting the same and pattern forming apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |