CN101039543B - 可调整高度的等离子体离子流探头 - Google Patents

可调整高度的等离子体离子流探头 Download PDF

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Publication number
CN101039543B
CN101039543B CN2007100857556A CN200710085755A CN101039543B CN 101039543 B CN101039543 B CN 101039543B CN 2007100857556 A CN2007100857556 A CN 2007100857556A CN 200710085755 A CN200710085755 A CN 200710085755A CN 101039543 B CN101039543 B CN 101039543B
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China
Prior art keywords
probe
plasma
probe element
assembly according
probe assembly
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Expired - Fee Related
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CN2007100857556A
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English (en)
Chinese (zh)
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CN101039543A (zh
Inventor
C·金巴尔
E·哈森
D·凯尔
A·马拉克塔诺夫
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN2007100857556A 2006-03-15 2007-03-14 可调整高度的等离子体离子流探头 Expired - Fee Related CN101039543B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/377074 2006-03-15
US11/377,074 US7479207B2 (en) 2006-03-15 2006-03-15 Adjustable height PIF probe

Publications (2)

Publication Number Publication Date
CN101039543A CN101039543A (zh) 2007-09-19
CN101039543B true CN101039543B (zh) 2011-12-14

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ID=38516551

Family Applications (1)

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CN2007100857556A Expired - Fee Related CN101039543B (zh) 2006-03-15 2007-03-14 可调整高度的等离子体离子流探头

Country Status (5)

Country Link
US (2) US7479207B2 (https=)
JP (1) JP5495476B2 (https=)
KR (1) KR101337754B1 (https=)
CN (1) CN101039543B (https=)
TW (1) TWI437928B (https=)

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US7578301B2 (en) * 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US7967996B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
US20080179290A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Temperature-switched process for wafer backside polymer removal and front side photoresist strip
US7699634B2 (en) * 2007-03-16 2010-04-20 Lam Research Corporation High power electrical connector for a laminated heater
US8043470B2 (en) * 2007-11-21 2011-10-25 Lam Research Corporation Electrode/probe assemblies and plasma processing chambers incorporating the same
US8849585B2 (en) 2008-06-26 2014-09-30 Lam Research Corporation Methods for automatically characterizing a plasma
US8547085B2 (en) 2008-07-07 2013-10-01 Lam Research Corporation Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber
KR101606734B1 (ko) 2008-07-07 2016-03-28 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 인시츄 아킹 이벤트들을 검출하기 위한 패시브 용량성-커플링된 정전식 (ｃｃｅ) 프로브 장치
KR20110046437A (ko) 2008-07-07 2011-05-04 램 리써치 코포레이션 플라즈마 처리 챔버 내의 막을 특성화하기 위한 ｒｆ 바이어스된 용량-결합형 정전 프로브 장치
US8164349B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Capacitively-coupled electrostatic (CCE) probe arrangement for detecting strike step in a plasma processing chamber and methods thereof
KR20110050618A (ko) * 2008-07-07 2011-05-16 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 디척킹을 검출하기 위한 용량성-커플링된 정전식 (ｃｃｅ) 프로브 장치 및 그 방법
US8179152B2 (en) 2008-07-07 2012-05-15 Lam Research Corporation Passive capacitively-coupled electrostatic (CCE) probe arrangement for detecting plasma instabilities in a plasma processing chamber
US9058960B2 (en) 2012-05-09 2015-06-16 Lam Research Corporation Compression member for use in showerhead electrode assembly
US9856563B2 (en) * 2012-08-22 2018-01-02 Uchicago Argonne, Llc Micro-balance sensor integrated with atomic layer deposition chamber
US9017513B2 (en) 2012-11-07 2015-04-28 Lam Research Corporation Plasma monitoring probe assembly and processing chamber incorporating the same
US10496847B2 (en) * 2017-02-16 2019-12-03 Visa International Service Association Systems and methods for anonymized behavior analysis
CN108696978A (zh) * 2018-07-25 2018-10-23 北京航空航天大学 朗缪尔探针、朗缪尔探针诊断系统及其诊断方法
CN109104805A (zh) * 2018-07-25 2018-12-28 北京航空航天大学 朗缪尔探针、朗缪尔探针诊断系统及其诊断方法
CN108650769B (zh) * 2018-07-25 2020-01-03 北京航空航天大学 高精度朗缪尔探针
CN110402005B (zh) * 2019-07-16 2024-12-10 上海红璨科技有限公司 一种用于等离子体诊断的中空探针
US11923179B2 (en) * 2021-03-26 2024-03-05 Taiwan Semiconductor Manufacturing Company Limited Plasma processing apparatus and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705931A (en) * 1994-12-21 1998-01-06 Adolph Slaby Instituut Forschungsgesellschaft Fur Plasmatechnologie Und Mikrostrukturierung Mbh Method for determining absolute plasma parameters
CN1404108A (zh) * 2001-06-05 2003-03-19 Eni技术公司 一种带有导热套管的rf探头

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US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
JPH07169590A (ja) * 1993-09-16 1995-07-04 Fujitsu Ltd 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置
JP3208044B2 (ja) * 1995-06-07 2001-09-10 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
FR2738984B1 (fr) 1995-09-19 1997-11-21 Centre Nat Rech Scient Procede et dispositif de mesure d'un flux d'ions dans un plasma
JP2000349032A (ja) * 1999-06-04 2000-12-15 Mitsubishi Heavy Ind Ltd プラズマ処理装置及びその制御方法
JP2001237097A (ja) 2000-02-21 2001-08-31 Hitachi Ltd プラズマ計測方法および計測装置
JP2003017295A (ja) 2001-07-02 2003-01-17 Nisshin:Kk プラズマ密度情報測定用プローブ
US6894474B2 (en) * 2002-06-07 2005-05-17 Applied Materials, Inc. Non-intrusive plasma probe
US6830650B2 (en) * 2002-07-12 2004-12-14 Advanced Energy Industries, Inc. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
JP2005203124A (ja) * 2004-01-13 2005-07-28 Nisshin:Kk プラズマ密度情報測定用プローブおよびプラズマ密度情報測定用装着具、プラズマ密度情報測定方法およびその装置、プラズマ処理方法およびその装置
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US8585862B2 (en) * 2007-08-21 2013-11-19 Panasonic Corporation Plasma processing device and plasma discharge state monitoring device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705931A (en) * 1994-12-21 1998-01-06 Adolph Slaby Instituut Forschungsgesellschaft Fur Plasmatechnologie Und Mikrostrukturierung Mbh Method for determining absolute plasma parameters
CN1404108A (zh) * 2001-06-05 2003-03-19 Eni技术公司 一种带有导热套管的rf探头

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平7-169590A 1995.07.04

Also Published As

Publication number Publication date
US20090133836A1 (en) 2009-05-28
TW200812443A (en) 2008-03-01
CN101039543A (zh) 2007-09-19
KR20070093883A (ko) 2007-09-19
JP5495476B2 (ja) 2014-05-21
US7867355B2 (en) 2011-01-11
JP2007294419A (ja) 2007-11-08
KR101337754B1 (ko) 2013-12-06
US7479207B2 (en) 2009-01-20
TWI437928B (zh) 2014-05-11
US20070215285A1 (en) 2007-09-20

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